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Part Manufacturer Description Datasheet Download Buy Part
JANTXV2N6353 Microsemi Corporation Power Bipolar Transistor, 5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 3 Pin, TO-24, 3 PIN
JANTX2N6353 Microsemi Corporation Power Bipolar Transistor, 5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 3 Pin, TO-24, 3 PIN
JAN2N6353 Microsemi Corporation Power Bipolar Transistor, 5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 3 Pin, TO-24, 3 PIN
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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2N6353JANTX Microchip Technology Inc Avnet - $277.39 $230.89
2N6353JANTXV Microchip Technology Inc Avnet - $461.79 $384.49
JAN2N6353 Texas Instruments Bristol Electronics 1 - -
JANTX2N6353 Microsemi Corporation Future Electronics - $250.80 $220.00
JANTX2N6353 NES Bristol Electronics 2 $48.00 $48.00
JANTX2N6353 Samsung Electronics Co. Ltd Bristol Electronics 8 - -
JANTX2N6353 Texas Instruments Bristol Electronics 1 - -
JANTX2N6353 Microsemi Corporation Chip1Stop 190 $132.38 $130.11
JANTXV2N6353 Microsemi Corporation Future Electronics 4 $350.00 $350.00
JANTXV2N6353 Microsemi Corporation New Advantage Corporation 3 $453.60 $453.60

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2N6353 datasheet (23)

Part Manufacturer Description Type PDF
2N6353 Microsemi NPN Darlington Power Silicon Transistor Original PDF
2N6353 API Electronics Short form transistor data Scan PDF
2N6353 API Electronics Short form transistor data Scan PDF
2N6353 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6353 Others Transistor Shortform Datasheet & Cross References Scan PDF
2N6353 Others Basic Transistor and Cross Reference Specification Scan PDF
2N6353 Others Shortform Transistor PDF Datasheet Scan PDF
2N6353 Others Shortform Transistor PDF Datasheet Scan PDF
2N6353 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N6353 New England Semiconductor BIPOLAR DARLINGTON Scan PDF
2N6353 PPC Products Transistor Short Form Data Scan PDF
2N6353 PPC Products Transistor Selection Guide Scan PDF
2N6353 PPC Products Transistor Selection Guide including JAN / JANTX / JANTXV Scan PDF
2N6353 Semiconductor Technology NPN & PNP Silicon Darlington Transistors Scan PDF
2N6353 Silicon Transistor JAN Qualified Power Transistors Scan PDF
2N6353 Silicon Transistor Low Frequency Silicon Power Transistor Scan PDF
2N6353JAN New England Semiconductor TRANS DARLINGTON NPN 150V 10A 2TO-33 Original PDF
2N6353JAN Unitrode International Semiconductor Data Book 1981 Scan PDF
2N6353JANTX New England Semiconductor NPN DARLINGTON POWER SILICON TRANSISTOR Original PDF
2N6353JANTX Unitrode International Semiconductor Data Book 1981 Scan PDF

2N6353 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N6350

Abstract: 2N6351 2N6353 2N6352 JANTX 2N6351 2N635 JANTX 2N6352 JANTX 2n r6e2 100S
Text: JAN & JANTX 2N6353 FEATURES • High Current Gain: up to 2000 min. @ lc = 5A • Low Saturation , TO-66 JAN & JANTX JAN & JANTX 2N6352 2N6353 . 80V. 150V Collector—Emitter , TO CASE TO-33 c "II*" JAN & JANTX 2N6352 JAN & JANTX 2N6353 COLLECTOR CONNECTED TO CASE 145 MAX , JANTX 2N 6350 JAN & JANTX 2N6351 JAN & JANTX 2N6352 JAN & JANTX 2N6353 MIL-STD-750 Test Symbol , °C Collector-Emitter Breakdown Voltage 2N6350, 2N6352 2N6351, 2N6353 BVceo 80 150 Vdc Vdc 3011 lc = 25mA, Reei = 2.2K


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PDF 2N6350 2N6351 2N6352 2N6353 MIL-S-19500/472 2N6351 2N6353 JANTX 2N6351 2N635 JANTX 2N6352 JANTX 2n r6e2 100S
2N6350

Abstract: No abstract text available
Text: JANTXV JANTXV JANTXV JANTXV 2N6350 2N6351 2N6352 2N6353 FEATURES · H igh C u rre n t G ain: u p to , . JANTX I JANTXV I JANTXV 2N63S2 2N6353 C ollector- Em itter V o lta g e , SPECIFICATIONS JAN, JANTX & JANTXV 2N6352 JAN JANTX & JANTXV 2N6353 -ib- L - ·H M F -B A S E , M in . M ax. U n it s M e th o d JA N & JA N T X 2N6351 JA N & JA N T X 2N6353 T e s t C o n d , , 2N6352 2N6351, 2N6353 E m itter Base Breakdow n Voltage, B ase 1 E m itte r B ase Breakdown Voltage, B


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PDF 2N6350 2N6351 2N6352 2N6353 2N63S2 2N6350 2NS35I
2013 - Not Available

Abstract: No abstract text available
Text: 2N6352 and 2N6353 NPN Darlington Power Silicon Transistor Available on commercial versions , €¢ JEDEC registered 2N6352 and 2N6353 • JAN, JANTX, and JANTXV qualifications are available per , 2N6353 2N6352 2N6353 Emitter-Base Voltage Total Power Dissipation o (1) @ TA = +25 C o (2 , : www.microsemi.com Page 1 of 7 2N6352 and 2N6353 MECHANICAL and PACKAGING • • • • • â , Page 2 of 7 2N6352 and 2N6353 ELECTRICAL CHARACTERISTICS @ T A = +25 oC unless otherwise noted


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PDF 2N6352 2N6353 MIL-PRF-19500/472 O-213AA T4-LDS-0315,
1999 - 2N6352

Abstract: 2N6350 2N6353 2N6351 1000C JAN 2N6351
Text: TECHNICAL DATA 2N6350 JAN, JTX, JTXV 2N6351 JAN, JTX, JTXV 2N6352 JAN, JTX, JTXV 2N6353 JAN , RATINGS Ratings Symbol 2N6350 2N6352 2N6351 2N6353 Units VCER VCBO VEBO 80 80 , TJ, Tstg 2N6352 2N6353 1.0(2) 5.0(3) 2.0(4) 25(5) 2N6350, 2N6351 TO-66 (TO , TA > 250C Derate linearly 250 mW/0C for TC > 1000C 2N6350 2N6351 2N6352 2N6353 20 4.0 Unit 0 C/W 2N6352, 2N6353 TO-33 ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted


Original
PDF 2N6350 2N6351 2N6352 2N6353 MIL-PRF-19500/472 2N6350 2N6352 2N6351 2N6353 1000C JAN 2N6351
Not Available

Abstract: No abstract text available
Text: IUNIT 2N6350 2N6351 2N6352 2N6353 /FEATURES DESCRIPTION • • • • Unitrode , & JANTXV 2N6352 JAN, JANTX & JANTXV 2N6353 c - 11* - T rl B- - u COLLECTOR CONNECTED TO CASE 8-37 3 PIN TO-66 JAN, JANTX JAN. JANTX I. JANTXV I, JANTXV 2N6352 2N6353 . , JANTX 2N6350 JAN & JANTX 2N6351 JAN & JANTX 2N6352 JAN & JANTX 2N6353 ELECTRICAL , 2N6350, 2N6352 2N6351, 2N6353 Emitter Base Breakdown Voltage, Base 1 Emitter Base Breakdown Voltage


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PDF 2N6350 2N6351 2N6352 2N6353 MIL-S-19500/472 2N6350
2013 - Not Available

Abstract: No abstract text available
Text: 2N6352 and 2N6353 NPN Darlington Power Silicon Transistor Available on commercial versions , ://www.microsemi.com. TO-213AA (TO-66) Package FEATURES • JEDEC registered 2N6352 and 2N6353 • JAN , Collector-Emitter Voltage Collector-Base Voltage 2N6352 2N6353 2N6352 2N6353 Emitter-Base Voltage Total , Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 7 2N6352 and 2N6353 , -0315, Rev. 1 (9/12/13) ©2013 Microsemi Corporation Page 2 of 7 2N6352 and 2N6353 ELECTRICAL


Original
PDF 2N6352 2N6353 MIL-PRF-19500/472 O-213AA T4-LDS-0315,
2002 - 2N6353

Abstract: rb1-e 2N6352
Text: 2N6350 2N6351 2N6352 2N6353 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings , VCBO VEBO IB IC 2N6350 2N6352 80 80 2N6351 2N6353 150 150 Units Vdc Vdc Vdc Vdc Adc Adc Adc , Storage Junction Temperature Range PT T J, T stg 1.0(2) 5.0(3) 2N6352 2N6353 2.0(4) 25(5) W W 0 , /0C for T C > 1000C Symbol RJC 2N6350 2N6351 20 2N6352 2N6353 4.0 Unit 0 C/W 2N6352, 2N6353 TO-24 (TO-213AA) 5) ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted


Original
PDF MIL-PRF-19500/472 2N6350 2N6351 2N6352 2N6353 2N6352 2N6353 rb1-e
2N6350 equivalent

Abstract: 2N6352 2N6351 2N6353 2N6350 JANTX 2N6351 JAN 2N6351
Text: to minimize ringing. FIGURE 5. Pulse response test circuit for 2N6351 and 2N6353. 17 MIL-PRF , -19500/472E FIGURE 7. Maximum safe operating area graph for types 2N6352 and 2N6353. 19 MIL-PRF , , SILICON, POWER, TYPES 2N6350, 2N6351, 2N6352, AND 2N6353 , JAN, JANTX, JANTXV, JANHC, AND JANKC Inactive , 2N6353 , and figure 3 for JANHC and JANKC (die). 1.3 Maximum ratings. Unless otherwise specified, TA = , (2) 5 (3) 12 2N6351 20 2.0 (4) 25 (5) 12 2N6352 4.0 2.0 (4) 25 (5) 12 2N6353 4.0 (1


Original
PDF MIL-PRF-19500/472E MIL-PRF-19500/472D 2N6350, 2N6351, 2N6352, 2N6353, MIL-PRF-19500. 2N6350 equivalent 2N6352 2N6351 2N6353 2N6350 JANTX 2N6351 JAN 2N6351
2002 - 2N6350

Abstract: 1000C 2N6351 2N6352 2N6353 JANTX 2N6351
Text: Qualified Level 2N6350 2N6351 2N6352 JAN JANTX JANTXV 2N6353 MAXIMUM RATINGS Symbol 2N6350 2N6352 2N6351 2N6353 Units Collector-Emitter Voltage Collector-Base Voltage VCER , TJ, Tstg 2N6352 2N6353 1.0(2) 2.0(4) (3) 5.0 25(5) -65 to +200 2N6350, 2N6351 TO-33* W W 0 C THERMAL CHARACTERISTICS Characteristics Symbol 2N6350 2N6351 2N6352 2N6353 , C/W 2N6352, 2N6353 TO-24* (TO-213AA) *See Appendix A for package outline ELECTRICAL


Original
PDF MIL-PRF-19500/472 2N6350 2N6351 2N6352 2N6353 2N6350 1000C 2N6351 2N6352 2N6353 JANTX 2N6351
2N6353

Abstract: 2n6351 RB1-E
Text: TELED YN E COMPONENTS SÖE D ö*il7bC15 üDQtiS42 t. T -3 3 -a 7 2N6350 thru 2N6353 NPN POWER DARLINGTON 5AMP SWITCHING TRANSISTORS · KD5A · LowVCE(Sat) · High Gain · Monolithic Construction , Operating & Storage Temp, Range Maximum Operating Conditions SYMBOL 2N6350 2N6351 2N6352 2N6353 UNIT 80 150 , See Safe Operating Area Diagrams 2N6353 2N6351/ 2N6353 MIN. MAX ELECTRICAL CHARACTERISTICS AT 25 , -2N6352 or 2N6353 + 30V + 30V


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PDF il7bC15 DQtiS42 2N6350 2N6353 100ohms 2N6351 2N6352 2N6353 10MHZ RB1-E
2N6350

Abstract: No abstract text available
Text: CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 NPN POWER DARLINGTON 5 AMP SWITCHING TRANSISTORS · · · · IC5A Low VCE(Sat) High Gain Monolithic Construction 2N6350 thru 2N6353 , Factor O perating & Storage Temp. Range Maximum O perating Conditions SYMBOL 2N6350 2N6351 2N6352 2N6353 , See Safe Operating Area Diagrams 2N6353 ELECTRICAL CHARACTERISTICS AT 25°C CASE TEMPERATURE , < I 3 V C E , COUECTOR-EMfTTER VOLTAGE (VOLTS) Safe Operating Area-2N6352 or 2N6353 + 30V


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PDF 2N6350 2N6353 100ohms 2N6351 2N6352 2N6353 2N6350, 2N6351 -2N6350
POWER TRANSISTORS 10A 400v pnp

Abstract: NPN Transistor 10A 400V to3 2N1489 pnp 400v 10a 2N1468 2N6350 2NXXXX 1526a 2N1400 2N6352
Text: X /472A 12-D 2N6351 YES YES X /472A 12-D 2N6352 YES YES X /472A 12-D 2N6353 YES YES X /472A 12 , 80V 2 N6350 2N6352 2N6301 2N6385 2N6283 2N6299 100V 2N6284 150V 2N6351 2N6353 hFEMIN. @lc 2000 @1 .OA (2N6350 & 2N6353 ) 1000 @ 1 .OA (2N6351 & 2N6353 ) 750 @4.0A 1000 @5.0A 750 @10.0A 750


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PDF T-33-Ã flES40aa D0D07Ã 19S00 2N389 /173A 2N424 2N1016B /102A POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 2N1489 pnp 400v 10a 2N1468 2N6350 2NXXXX 1526a 2N1400 2N6352
2NXXXX

Abstract: NPN Transistor 10A 400V to3 transistor 2n 523 2n3741 MIL POWER TRANSISTORS 10A 400v pnp c 3420 transistor TO-59 Package transistor 2N 3440 power transistors table NPN Transistor 15A 400V to3
Text: 6308 2N6338 2N6341 2N6350 2N6351 2N 6352 2N6353 2N 6383 2N6384 2N 6385 JAN YES YES YES YES YES YES , 2N6298 2N6299 F-24 2N6351 2N6353 < o o o o 1000 @5.0A 2V @5.0A 750 @10.0A 2V @10.0A hFEMIN. @lc VcEtSAT) © &.N) I T l 2000 @1,0A (2N6350 & 2N6353 ) 1000 @ 1,0A (2N6351 & 2N6353


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PDF 88DQ0787 fl2S40aa 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1480 2N1481 2N1484 2NXXXX NPN Transistor 10A 400V to3 transistor 2n 523 2n3741 MIL POWER TRANSISTORS 10A 400v pnp c 3420 transistor TO-59 Package transistor 2N 3440 power transistors table NPN Transistor 15A 400V to3
Not Available

Abstract: No abstract text available
Text: 2N6353+JAN Transistors NPN Darlington Transistor Military/High-RelY V(BR)CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u× @V(CBO) (V) (Test Condition)150 h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.10k @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq50M @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)10 V(CE)sat Max. (V)2.5 @I(C) (A) (Test


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PDF 2N6353 Freq50M
2N6522

Abstract: ir6062 IR6060 IR5064 MM6427 IR6002 D45E11 ST44E1 IR5000 2N999
Text: 2N6353 2N5390 2N6350 2N6351 2N6352 2N6353 15 5.0 5.0 25 25 80 80 150 80 150 80 80* 150* 80* 150* 60


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PDF 0DD23S 2N997 2N998 2N999 2N2723 2N2785 2N99B 2N6522 ir6062 IR6060 IR5064 MM6427 IR6002 D45E11 ST44E1 IR5000
Not Available

Abstract: No abstract text available
Text: 2N6353+JANTXV Transistors NPN Darlington Transistor Military/High-RelY V(BR)CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u× @V(CBO) (V) (Test Condition)150 h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.10k @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq50M @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)10 V(CE)sat Max. (V)2.5 @I(C) (A


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PDF 2N6353 Freq50M
Not Available

Abstract: No abstract text available
Text: 2N6353 Transistors NPN Darlington Transistor Military/High-RelN V(BR)CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u× @V(CBO) (V) (Test Condition)150 h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.10k @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq50M @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)10 V(CE)sat Max. (V)2.5 @I(C) (A) (Test


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PDF 2N6353 Freq50M
Not Available

Abstract: No abstract text available
Text: 2N6353+JANTX Transistors NPN Darlington Transistor Military/High-RelY V(BR)CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u× @V(CBO) (V) (Test Condition)150 h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.10k @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq50M @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)10 V(CE)sat Max. (V)2.5 @I(C) (A


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PDF 2N6353 Freq50M
2N6352

Abstract: No abstract text available
Text: c* "1 i 2N6352 2N6353 ` 60 80 40 60 80 80 150 8.0 8.0 10.0 10.0 10.0 5.0 5.0 750/18000@6/3


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PDF 2N6298 2N6299 2N6648 2N6649 2N6650 2N6300 2N6301 2N6383 2N6384 2N6385 2N6352
Not Available

Abstract: No abstract text available
Text: 2N6301* / 2N6350* 2N6353 * TO-33 80 10.0 1000 5.0/3.0 2.0 5.0/0.1 \|^ ^ S


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PDF 2N6352* 2N6300* 2N6383* 2N6384* 2N6385* O-213/ 2N6351* 2N6301* 2N6350* 2N6353*
1999 - 1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Text: 2N4236 2N5660 2N5661 2N5684 2N5685 2N6277 2N6283 2N6353 2N6383 2N7371 2N1485


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PDF MIL-PRF-19500 2N720A 2N1131 2N1132 2N1893 JANHC2N2222A JANKC2N2222A JANH3057A 2N3250A 2N3251A 1N6762 JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Not Available

Abstract: No abstract text available
Text: o H DA RLIN GTON f l f f c i l «MtlttOTON M W O ec TO-33 F-24 PACKAGE PEAK D E V IC E TYPE 2N635Q" 2M6351" B V «o V O LT S 80 150 k AM PS 5.0 5.0 hFE m in / m a x 2000 1000 ·c @ V CE A V 1.0/5.0 1.0/5.0 ^ C E (s a t) m ax V O LT S 1.5 1.5 *C @ *6 A A 5.0/0.005 5.0/0.01 < û PEAK D E V IC E TYPE 2N6352" 2N6353" b v c eo k AM PS 5.0 5.0 V O LT S 80 150 h FE m in / m a x 2000 1000 *C @ V C E A V 1.0/5.0 1.0/5.0 ^ C E (s a t) m ax V O LT S


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PDF 2N635Q" 2M6351" 2N6352" 2N6353" 3/TO-66 2N6300" 2N6301" O-204/TO-3 2N6383* 2N6384M
TO-213

Abstract: 2N6297 WF24 2N6351
Text: A POW ERHOUSE BIPOLAR N PN D A R L IN G T O N POW ER T R A N S IS T O R S D E /ICE TYPE PACKAGE b v CEO VOLTS PEAK >C AMPS hFE min/max VCE (sat) max VOLTS < < o m c @ !b A A 5.0/0.005 5.0/0.01 TO-33 2N6350* 2N6351* 80 150 5.0 5.0 2000 1000 o 1.0/5.0 1.0/5.0 1.5 1.5 w F~ 24 te # TO-213/ ."xTO -66 2N6352* 2N6353 * 80 150 5.0 5.0 2000 1000 1.0/5.0 1.0/5.0 1.5 1.5 5.0/0.005 5.0/0.01 2N6300* 2N6301* 60 80 8.0 8.0 750


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PDF 2N6350* 2N6351* O-213/ 2N6352* 2N6353* 2N6300* 2N6301* O-204/TO-3 2N6383* 2N6384* TO-213 2N6297 WF24 2N6351
472 M

Abstract: MIL-S-19500 2N3055 JANTX
Text: 2N6352 - JAN, JAN-TX, JAN-TXV 2N6353 - JAN, JAN-TX, JAN-TXV M IL-S-19500/415 MIL-S-19500/415 M IL-S


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PDF 2N2812 2N2814 2N2880 2N3749 2N3055 2N3418 2N34I9 2N3420 2N3421 2N3442 472 M MIL-S-19500 2N3055 JANTX
TO61 package

Abstract: TO111 package 2N6262 2N5627 2N6354 2N6352 2N6351 2N6350 2N5007 2N6353
Text: 16 UULmJ ELECTRONICS, INC. COLLECTOR CURRENT = 10 AMPS NPN TYPES—Continued Device No Case VCBO Volts VcEO (sus) Volts VEBO Volts 0JC °c/w Ft MHz, h FE VCE IC Min Max Vce (sat) Vbe (sat) @ IC @ IB 2N6262 TO-3 170 150 7 20 70 2 3 1.5 2.2 1.5 .15 1.2 20 2N6350 TO-33 80 80 12 2K 10K 5 5 1.5 2.5 5 .005 20 30 2N6351 TO-33 150 150 12 IK 10K 5 5 1.5 2.5 5 .005 20 30 2N6352 TO- 80 80 12 2K 10K 5 5 1.5 2.5 5 .005 4 30 66/3 2N6353 TO- 150 150 12 IK 10K 5 5


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PDF 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6187 TO61 package TO111 package 2N5627 2N5007
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