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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2N6259 NTE Electronics Inc Newark element14 399 $5.68 $4.75
2N6259 Solid State Manufacturing Allied Electronics & Automation - $3.68 $3.37
2N6259 SPC Technology Bristol Electronics 5 $6.72 $6.72
2N6259 General Electric Company Bristol Electronics 2 $6.72 $6.72
2N6259 Westinghouse Electric Corporation Bristol Electronics 8 $6.72 $4.37
2N6259 RCA Bristol Electronics 1 - -
2N6259 Harris Semiconductor Bristol Electronics 2 $6.72 $6.72
2N6259 NTE Electronics Inc element14 Asia-Pacific 27 $7.39 $4.89
2N6259 NTE Electronics Inc Farnell element14 38 £7.91 £4.71

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2N6259 datasheet (25)

Part Manufacturer Description Type PDF
2N6259 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
2N6259 API Electronics 25 AMPS / 30 AMPS NPN Transistors Scan PDF
2N6259 Diode Transistor TO-3 / Various Transistor Selection Guide Scan PDF
2N6259 Diode Transistor Silicon Transistors Scan PDF
2N6259 Diode Transistor Silicon Transistors Scan PDF
2N6259 Diode Transistor 35 to 500V Transistor Selection Guide Scan PDF
2N6259 General Electric High voltage, high power transistor. 170V, 250W. - Pol=NPN / Pkg=TO3 / Vceo=150 / Ic=16 / Hfe=15min / fT(Hz)=- / Pwr(W)=250 Scan PDF
2N6259 Mospec BJT, NPN, Power Transistor, IC 16A - Pol=NPN / Pkg=TO3 / Vceo=150 / Ic=16 / Hfe=15min / fT(Hz)=- / Pwr(W)=250 Scan PDF
2N6259 Mospec High Power NPN Silicon Transistor Scan PDF
2N6259 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2N6259 Others Semiconductor Master Cross Reference Guide Scan PDF
2N6259 Others Shortform Electronic Component Datasheets Scan PDF
2N6259 Others Shortform Transistor Datasheet Guide Scan PDF
2N6259 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N6259 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6259 Others Basic Transistor and Cross Reference Specification Scan PDF
2N6259 Others Transistor Shortform Datasheet & Cross References Scan PDF
2N6259 Others Shortform Transistor PDF Datasheet Scan PDF
2N6259 Others Transistor Replacements Scan PDF
2N6259 New England Semiconductor NPN TO-3 Transistor Scan PDF

2N6259 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - 2n6259

Abstract: No abstract text available
Text: | | CONTACT US | VIEW CART | SHIPPING http://store.americanmicrosemiconductor.com/ 2n6259.html 4/12 , 2N6259 High Voltage - High Power Transistor. 170V - 250W. 12.98 Transistors Bipolar . Page 1 of 1 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N6259 2N6259 Hig h V olt age - Hig h P ow er Tr ans ist or. 1 70V - 250W . Enter , : List Price: Our Price: You Save: 2N6259 $ 16.23 Information Spec Sheets Tutorials Shipping FAQs


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PDF 2N6259 2N6259 com/2n6259
RCA-2N3773

Abstract: 2N6259 RCA 2N3773 2n3773 rca 2N4348 RCA 2n6259 2N4348 2n3773 power Amplifier 8a103 2N6269
Text: 17370 D T~ ~/3 2N3773, 2N4348, 2N6259 File Number 526 High-Voltage, High-Current Power Transistors , €” 120W(2N4348), 150 W (2N3773), 250 W ( 2N6259 ) a 5-A specification for hFe, VB£l and VCE(sat) (2N4348) m 8-A specification for hF£, Vee, and VC£(sat) (2N3773, 2N6259 ) TERMINAL DESIGNATIONS 9ZCS-2/516 JEDEC TO-2Q4AA/TO-3 The RCA-2N3773, 2N4348. and 2N6259 are silicon n-p-n transistors intended for a , TEMPERATURE, Tslg . 'In accordance with JEDEC registration data. 2N4348 2N3773 2N6259 140 160


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PDF 001737D 2N3773, 2N4348, 2N6259 2N4348) 2N3773) 2N6259) RCA-2N3773 2N6259 RCA 2N3773 2n3773 rca 2N4348 RCA 2n6259 2N4348 2n3773 power Amplifier 8a103 2N6269
2N6259

Abstract: 2n3773 2N3773A 2N4348 2N 6259 2n3773m
Text: Power Transistors 2N3773, 2N4348, 2N6259 HARRIS SEMICOND SECTOR 27E D File Number 526 , W ( 2N6259 ) m 5 -A specification for hFe. VB £, and Vc£!sat) (2N4348) m 8-A specification lor hPf. VBe. and Vcc(sat) (2N3773, 2N6259 ) T-33-I5 TERMINAL DESIGNATIONS T " I- 3 92CS*27St6~ JEDEC TO-2Û4AA/TO-3 The 2N3773. 2N4348. and 2N6259 are silicon n-p-n transisTors intended for a wide , . 2N6259 170 170 150 7 16 30 4 15 250 1.43 V V V V A A A A W W /° C °C ·n 2 -56 5 HiHAS


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PDF 2N3773, 2N4348, 2N6259 2N4348) 2N3773) 2N6259) T-33-I5 2N6259 2n3773 2N3773A 2N4348 2N 6259 2n3773m
2n6259

Abstract: 2N6259 equivalent
Text: SavantIC Semiconductor Product Specification 2N6259 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·Designed for high power audio ,disk head positioners,linear amplifiers,switching regulators solenoid , SavantIC Semiconductor Product Specification 2N6259 Silicon NPN Power Transistors CHARACTERISTICS , dimensions (unindicated tolerance:±0.10mm) 3 2N6259 -


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PDF 2N6259 2n6259 2N6259 equivalent
2n6259

Abstract: 2n4348
Text: .5 5 2N6259 250 170 150 7 16 15 60 8 2 1.0 2.0 8 .8 2 , TYPICAL OUTPUT CHARACTERISTICS FOR TYPE 2N6259 BASE-TO-EMITTER VOLTAGE (VMI - V TYPICAL INPUT CHARACTERISTICS FOR TYPE 2N6259 12 Solid Power Corporation ■00435^2 0DQD414 10b ■C A S E TEM , . COLLECTOR-TO-EMITTER VOLTAGE < CfJ - V V MAXIMUM OPERATING AREAS FOR TYPE 2N6259 440 E A S T ER N PARKW AY, FARM


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PDF 2N3773 2N4348 2N6259 TWX-510-224-6582 T0-58 O-114 00435c 2n6259 2n4348
2004 - 2N6259

Abstract: No abstract text available
Text: Submit ¡ ¡ 2N6259 Availability Buy 2N6259 at our online store ! 2N6259 Information Cate , 2N6259 Specifications Milita ry/High-R e l : N V(BR )C EO (V) : 150 V(BR )C BO (V) : 170 I(C ) Max . (A


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PDF 2N6259
2005 - 2n6259

Abstract: No abstract text available
Text: Product Specification www.jmnic.com 2N6259 Silicon NPN Power Transistors DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipation APPLICATIONS Designed for high power audio ,disk head positioners,linear amplifiers,switching regulators solenoid drivers,and , Product Specification www.jmnic.com 2N6259 Silicon NPN Power Transistors CHARACTERISTICS Tj , www.jmnic.com 2N6259 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions


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PDF 2N6259 2n6259
2N434B

Abstract: 2N6259
Text: i, Line. 2N6259 Hometaxial-Base , for hFE, VfjE. & VCE<»«> (2N4348) 8-A specification for hFE, VBE. & VcE(Mt) (2N3773. 2N6259 ) 140 V min I2N4348). 160 V min (2N3773) 170 V min ( 2N6259 ) • Low saturation voltaga with high beta , FE Collector-to-Emitter Sustaining Voltage; Mm. 'B 2N6259 2N3773 Max. M»x


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PDF 2N3773, 2N4348, 2N6259 I2N4348) 2N3773) 2N6269) 100SI 50kHz! 2N434B 2N6259
2n6259

Abstract: No abstract text available
Text: °C COLLECTOR-TO-EMITTER VOLTAGE iVce) - V TYPICAL OUTPUT CHARACTERISTICS FOR TYPE 2N6259 BASE-TO-EMITTER VOLTAGE (VBf) - V TYPICAL INPUT CHARACTERISTICS FOR TYPE 2N6259 Solid Power Corporation Ir I 1 1 I c a se tem , VOLTAGE (Va ) - V MAXIMUM OPERATING AREAS FOR TYPE 2N6259 BASE TO EMITTER VOLTAGE (V,> - V


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PDF 2N4348 2N3773 2N3773 2N4348 2N6259 TWX-510-224-6582 2n6259
2N4346

Abstract: 2N4348 2N6259 2n6259 lf TIC 440 2N3773
Text: 2N6259 250 170 150 7 16 15 60 8 2 1.0 2.0 8 .8 2 1.0 0.B < I S 0.6 £ tu 1 0.4 0.2 COLlECTO , / / / 0.5 1 1.5 2 2.5 3 8ASE-TO-EMITTER VOITAGE (V„l - V TYPICAL INPUT CHARACTERISTICS FOR TYPE 2N6259 , 2N6259 12 This Material Copyrighted By Solid Power Corporation Its Respective Manuf adirei- _ _ , OPERATING AREAS FOR TYPE 2N6259 CASE TEMPERATURE tTc> = 2J*C INDUCTANCE (L) = 40 mH


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PDF 2N3773 2N4348 2N6259 2N3773 TWX-510-224-6582 ioH151- O-114 -24UHFâ TWX-510-224-6582 2N4346 2n6259 lf TIC 440
2n6259

Abstract: No abstract text available
Text: <$£)ni-Conduetor ZPwauoti, Una. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 378-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. HIGH POWER NPN SILICON TRANSISTORS NPN 2N6259 The 2N6259 is power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators, solenoid drivers.and dc to dc converters or inverters , encourages customers to verify rhnt datasheets are current before plncing orders 200 2N6259 NPN


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PDF 2N6259 2N6259 100mAJB
2N6259 amplifier

Abstract: 2N6259 "Solenoid Drivers" 2N6259 equivalent high power npn 8A NPN Transistor 8A 2N6259 inchange
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6259 DESCRIPTION ·DC Current Gain: hFE= 15-60@IC= 8A ·High Power Dissipation : PD= 150W@ IC= 15A APPLICATIONS ·Designed for high power audio, disk head positioners, linear amplifiers, switching regulators,solenoid drivers,and DC-DC converters or inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE , INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6259 ELECTRICAL CHARACTERISTICS TC


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PDF 2N6259 100mA 2N6259 amplifier 2N6259 "Solenoid Drivers" 2N6259 equivalent high power npn 8A NPN Transistor 8A 2N6259 inchange
2N6259

Abstract: 2N6259 amplifier
Text: Ü&MOSPEC HIGH POWER NPN SILICON TRANSISTORS The 2N6259 is power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators,solenoid drivers,and dc to dc converters or inverters. FEATURES: * High Power Dissipation PD = 150 W (Tc = 25°C) * High DC Current Gain and Low Saturation Voltage hFE = 15-60 @ lc = 8 A , VCE = 2 V vce(sat) = 1 0 v , 175 200 Tc , TEMPERATUREf °C) NPN 2N6259 16 AMPERE POWER TRANSISTORS NPN SILICON 150 VOLTS 150


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PDF 2N6259 2N6259 amplifier
2N6259

Abstract: No abstract text available
Text: Back to Bipolar Power Transistors 2N6259 M A X IM U M R A T IN G S - A b so lute-M axim um V alues: · · ^CBO. ^ CEO. 1 7 0 . V 1 5 0 . V 1 7 0 . V 7 , nits L im its T est C onditions C h a rac te ristic s 2N6259 C u rre n t (Ade) V oltage (Vdc) M in M ax


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PDF 2N6259 T0-204AA 2N6259
Not Available

Abstract: No abstract text available
Text: 2N6259 ^ 1 W ^NEW ENGLAND SEMICONDUCTOR MAXIMUM RATINGS - Absolute-Maximum Values: * ^CBO. * ^ CEO. * ^ C E X . * ^ E B O , CHARACTERISTICS, Tc = 25°C (unless otherwise specified) Units Limits Test Conditions Characteristics 2N6259


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PDF 2N6259
Ultrasonic amplifier 50w

Abstract: 2n6259 general 2N5786 2N5298 2N344 2N3054 2N1482 BDY37 BDY29 2n3773 power Amplifier
Text: 70 V hFE = 15-60 @ 10 A fT = 0.8 MHz min PT = 150W 2N6259 VCER(susl = 160 V hFE = 15«) ®8A fT = 0.6 , Voltage, General Purpose 2N3773 High-Current High Voltage, General Purpose 2N6259 High-Current High


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PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 Ultrasonic amplifier 50w 2n6259 general 2N5786 2N5298 2N344 2N3054 2N1482 BDY37 BDY29 2n3773 power Amplifier
BDY29

Abstract: 2n3773 power Amplifier BD278 40349 2N3055 2N5786 2N5298 2N3054 2N1482 BDY71
Text: 70 V hFE = 15-60 @ 10 A fT = 0.8 MHz min PT = 150W 2N6259 VCER(susl = 160 V hFE = 15«) ®8A fT = 0.6 , , General Purpose 2N3773 High-Current High Voltage, General Purpose 2N6259 High-Current High Voltage


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PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 BDY29 2n3773 power Amplifier BD278 40349 2N3055 2N5786 2N5298 2N3054 2N1482 BDY71
2010 - RCA29

Abstract: RCA29B 2n6259 DSA0058011 RCA31A 2N5496 2N5494 2n6259 general 2N5293 rca 2N3773
Text: Hometaxial-Base n-p-n Type Selection Charts (cont'd) h V C E 0 (sus) V V C E X (sus) FE l V C E X -mA V V CE V C E (sat)-V V 'c A CE V Temp.-°C 25 'c A >B A 2N3773 FAMILY (n-p-n) High Current, High Voltage, General Purpose f » 0.7 MHz typ; P t o 250 W max T T JEDEC T O - 3 / T O - 2 0 4 M A Package 2 2 2 0.2 120 140 140 150 1 1.4 1.4 1 5 8 8 8 0.5 0.8 0.8 0.8 2N4348 2N3773* BDY37 2N6259 120 140 140 150 140^ 160^ 160


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PDF 2N3773 2N4348 2N3773* BDY37 2N6259 RCA29/SDH 2N5295 2N5296 RCA31/SDH RCA3054 RCA29 RCA29B 2n6259 DSA0058011 RCA31A 2N5496 2N5494 2n6259 general 2N5293 rca 2N3773
2N4211

Abstract: 2N1514 2n3054 2N2753 2N2338 2N2580 2N5928 2N3472 2N2227 2N2228
Text: 1748-1620 1768-1410 2N1016E 2N2123 2N2758 2N3149 2N4950 2N6259 14 163-30 1748-1630 1768-1420 2N1016F


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PDF 2N1015 2N2015 2N2739 2N3743 2N4002 2N6046 2N1015A 2N2016 2N2740 2N3771 2N4211 2N1514 2n3054 2N2753 2N2338 2N2580 2N5928 2N3472 2N2227 2N2228
transistor c118

Abstract: 2N6259 equivalent 2n6258 2N6258 equivalent 2n6259
Text: : 2N6258, 2N6259 IS /B rated to 300W (100V, 3.0A for 1 sec.) C-118 VßE(sat) - SATURATION


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PDF 2N6258, 2N6259 C-118 transistor c118 2N6259 equivalent 2n6258 2N6258 equivalent 2n6259
SDT9309

Abstract: 2N3055 2N3055H SDT9302 SDT9301 2n3442 ic 331
Text: -3 TO-3 TO-3 331 331 331 î® 2N3773 2N6259 /AMWP 140 150 15/60 15/60 60 40 45 80 20/70


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PDF 2N3441 2N3054 SDT31303 SDT31305 SDT31307 10/S0 SDT9301 SDT9302 SDT9303 SDT9304 SDT9309 2N3055 2N3055H 2n3442 ic 331
complement of 2N3053

Abstract: 2N6259 BDY29 2N4314 2N6259 amplifier BDY37 40375 40411 2n6259 general py 1560
Text: DESCRIPTION 2N3771 FAMILY [n-p-n] (silicon) fj = 0.8 MHz min; P-p up to 250 W max 2N TYPES 2N6257 High-Current, General Purpose 2N3771" High-Current, General Purpose 2N3772® High-Current. General Purpose BDY29 High-Current, General Purpose AUDIO TYPES 40411 Output, 70-W Class AB Amplifier 2N TYPES 2N4348 High-Current High Voltage, General Purpose 2N3773 High-Current High Voltage, General Purpose 2N6259 High-Current High Voltage, General Purpose BDY37 High-Current High Voltage, General Purpose h


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PDF 2N3771 2N6257 2N3771" 2N3772Â BDY29 2N4348 2N3773 2N6259 BDY37 2N3053 complement of 2N3053 2N4314 2N6259 amplifier 40375 40411 2n6259 general py 1560
2N4348

Abstract: 2N6259
Text: le c t r o n ic s in c . POW ER TRAN SISTORS PT TYPE NO. 2N3773 2N4348 M AXIM UM RATINGS @ Ic 25°C BV cbo B V ceo B V ebo V V V A Watts 150 120 250 160 140 170 140 120 150 7 FE @ Ic A 8 5 8 V'CE V 4 4 2 MIN MAX 15 15 15 60 60 60 Sat Voltages V ce V be V V 1.4 1.0 1.0 2 .2 2 ,0 Test Conditions Ib Ic A A 8 5 8 .8 .5 .8 leso ma 5 5 2 16 10 16 TO-3 2N6259 7 7 2.0 COUCCTO* TO-fMlTTf* VOLTAGE (V^i - V 0.2 0.4 0.6 0.8 1.0 1.2 ¡9 1.6 TYPICAL OUTPUT CHARACTERISTICS F O I TYPE 2N3773


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PDF 2N3773 2N4348 2N6259 2N3773 2N4348 2N6259
J377

Abstract: 2N4211 to63 2N6359 2N6259 2N5631 2N3773 2N3599 2N3598 2N3237
Text: DIODE TRANSISTOR CO INC A4 DE | 2A4fi3SS Q00013A 3 y ó ^ DlQDETft4l\l515TDRCQ.ll\IC. (201) 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 Device VCEO hFE IC VCE(Sat) IC rr PT Case Type Max(V) Mln/Max (A) Max(V) (A) Mln (MHz) Max(W) Stvle 2N3773 140 15/60 8 1.4 8 0.2 150 TO-3 2 N5629 100 25/100 8 1.0 01 1 200 TO-3 2 N5630 120 20/80 8 1.0 10 1 200 TO-3 2N5631 140 15/60 8 1.0 10 1 200 TO-3 2N6259 150 15/60 8 1.0 8 0.2 250 TO-3 2N6359 80


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PDF Q00013A DlQDETft4l\l515TDRCQ 2N3773 N5629 N5630 2N5631 2N6259 2N6359 2N3237 N3597 J377 2N4211 to63 2N3599 2N3598
TO63

Abstract: 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359
Text: DIODE TRANSISTOR CO INC A4 DE|aa4û352 0000130 3 J3~oJ D1ÛDE TR^f\15i5TDR Ca,lî\IC. (201) 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 Device VCEO hFE IC VCE(Sat) IC IT PT Case Type Max(V) M In/Max (A) Max(V) (A) Mln (MHz) Max(W) Stvle 2N3773 140 15/60 8 1.4 8 0.2 150 TO-3 2 N5629 100 25/100 8 1.0 01 1 200 TO-3 2 N5630 120 20/80 8 1.0 10 1 200 TO-3 2N5631 140 15/60 8 1.0 10 1 200 TO-3 2N6259 150 15/60 8 1.0 8 0.2 250 TO-3 2N6359 80 15/60 8


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PDF f\15i5TDR 2N3773 N5629 N5630 2N5631 2N6259 2N6359 2N3237 N3597 2N3598 TO63 2N3599 2N3772
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