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2N6248 datasheet (29)

Part Manufacturer Description Type PDF
2N6248 Central Semiconductor Leaded Power Transistor General Purpose - Pol=PNP / Pkg=TO3 / Vceo=110 / Ic=10 / Hfe=20-100 / fT(Hz)=10M / Pwr(W)=125 Original PDF
2N6248 Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=110 / Ic=10 / Hfe=20-100 / fT(Hz)=10M / Pwr(W)=125 Original PDF
2N6248 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
2N6248 API Electronics Short form transistor data Scan PDF
2N6248 Diode Transistor Transistor Short Form Data Scan PDF
2N6248 Diode Transistor Silicon Transistors / TO-63 Transistors Scan PDF
2N6248 General Electric Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. - Pol=PNP / Pkg=TO3 / Vceo=110 / Ic=10 / Hfe=20-100 / fT(Hz)=10M / Pwr(W)=125 Scan PDF
2N6248 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2N6248 Others Basic Transistor and Cross Reference Specification Scan PDF
2N6248 Others Transistor Shortform Datasheet & Cross References Scan PDF
2N6248 Others Shortform Transistor PDF Datasheet Scan PDF
2N6248 Others Transistor Replacements Scan PDF
2N6248 Others Transistor Replacements Scan PDF
2N6248 Others Cross Reference Datasheet Scan PDF
2N6248 Others Transistor Replacements Scan PDF
2N6248 Others Transistor Replacements Scan PDF
2N6248 Others Transistor Replacements Scan PDF
2N6248 Others Transistor Replacements Scan PDF
2N6248 Others Transistor Replacements Scan PDF
2N6248 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF

2N6248 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N6246

Abstract:
Text: Inchange Semiconductor Product Specification 2N6246 2N6247 2N6248 Silicon PNP Power , Collector-emitter voltage 2N6248 SEM Open emitter 2N6246 2N6247 Emitter-base voltage UNIT -70 -90 V -110 -60 Open base 2N6248 VEBO TOR DUC VALUE -80 V -100 Open , 2N6247 2N6248 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , =-2A 2N6246 IC=-7A ; VCE=-4V -2.0 2N6247 IC=-6A ; VCE=-4V -1.8 2N6248 IC=-5A ; VCE


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PDF 2N6246 2N6247 2N6248 2N6246 2N6247 2N6248 PNP 100V 2A
2N6248

Abstract:
Text: , 2N6247, and 2N6469. Fig. 6 - Typical dc beta characteristics for 2N6248. 2-102 HARRIS SEMICOND , - Typical input characteristics for 2N6248. Fig. 10 - Typical output characteristics for 2N6246 , output characteristics for 2N6248. Fig. 12- Typical gain-bandwidth product vs. collector current for , 2N6246, 2N6247, 2N6248 , 2N6469 H A RR IS S E M I C O N D S E C T O R SbE D File N u m b e r , curves High gain at high current 92C S -27516 JEDEC TO-204AA T h e 2N6246,\ 2N6247, | 2N6248 , and


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PDF 2N6246, 2N6247, 2N6248, 2N6469 O-204AA 2N6246 2N6469 P-6019 2N6248 TA8724 transistor 2n6246
2n6246

Abstract:
Text: SavantIC Semiconductor Product Specification 2N6246 2N6247 2N6248 Silicon PNP Power , 2N6246 VCBO Collector-base voltage 2N6247 VALUE -70 Open emitter -90 2N6248 Collector-emitter voltage -60 2N6247 Open base 2N6248 VEBO V -110 2N6246 VCEO UNIT , Semiconductor Product Specification 2N6246 2N6247 2N6248 Silicon PNP Power Transistors CHARACTERISTICS , =-5A; IB=-0.5A 2N6246 Collector-emitter saturation voltage UNIT IC=-7A; IB=-0.7A 2N6248


Original
PDF 2N6246 2N6247 2N6248 2N6246 2N6247 -100V; 2N6248
2005 - 2N6246

Abstract:
Text: Product Specification www.jmnic.com 2N6246 2N6247 2N6248 Silicon PNP Power Transistors , Collector-base voltage 2N6247 VALUE 70 Open emitter 90 2N6248 Collector-emitter voltage 60 2N6247 Open base 2N6248 VEBO V 110 2N6246 VCEO UNIT Emitter-base voltage 80 , www.jmnic.com 2N6246 2N6247 2N6248 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise , Collector-emitter saturation voltage UNIT IC=7A; IB=0.7A 2N6248 VCEsat-2 MAX 100 2N6246


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PDF 2N6246 2N6247 2N6248 2N6246 2N6247 2N6248
TA8724

Abstract:
Text: characteristics tor 2N6246, 2N6247, 2N624B, and 2N6469. Fig. 9 — Typical input characteristics for 2N6248. 9ICS-ZIS4eRI Fig. 11 — Typical output characteristics lor 2N6248. 436 0 1E 17432 D T^BB'ZS Fig. 8 , _General-Purpose Power Transistors 2N6246, 2N6247, 2N6248 , 2N6469 TERMINAL DESIGNATIONS JEDEC TO-2Q4AA RCA-2N6246, 2N6247, 2N6248 , and 2N6469 are epitaxial-base silicon p-n-p transistors featuring high gain at high , registration data format (JS-6 RDF-21. 2N6469 2N6246 2N6247 2N6248 VCBO -50 -70 -90 -110 V VCER -50 -70


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PDF 307S0Ã 0D174E7 2N6246, 2N6247, 2N6248, 2N6469 RCA-2N6246, 2N6469 TA8724 2N6247 RCA-2N6246 2N6246 2N6248 clare mercury TA7279 TA7280 TA7281 RC 4565
TA8724

Abstract:
Text: T y p ic a l d c beta c h a ra c te ris tic s fo r 2N6248. 2-102 2N6246, 2N6247, 2N6248 , p u t c h a ra c te ris tic s fo r 2N6248. Fig. 1 0 - T y p ic a l o u tp u t c h a ra c te ris , &I COLLECTOR-TO-EMITTER VOLTAGE (VCE) - V Fig. 11 - T y p ic a l o u tp u t c h a ra c te ris tic s fo r 2N6248. , 2N6246, 2N6247, 2N6248 , 2N6469 File Number 677 Silicon P-N-P Epitaxial-Base, High-Power , safe-area-of-operation curves m High gain at high current JEDEC TO-204AA T h e 2N 6246, | 2N 6247, [ 2N6248 , and 2N 6


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PDF 2N6246, 2N6247, 2N6248, 2N6469 O-204AA 92CS-24702RI P-6019 92CS-I9586R3 TA8724 2N6247
2N3055

Abstract:
Text: -66) 675 • Or higher voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P , 2N6107 [P-N-P] mily Designation 2N6472 [N-P-N] 2N6248 [P-N-P] 2N6488 [N-P-N] 2N6491 [P-N-P] 2N5783 , »5 MHz typ. 676 2N6475 vCEB(«-i=nov h,.»30-150 -1.5A fj=5 MHz typ. 676 2N6248 VcerISUSI - -105 V hFE = , -31 526 2N6248 VCER(SUS) - -110\ lc - —14 A (TO-3) 677 2N3441 VCEB(SUSI - 150 V lc = 2 A ITO-661 529 , 2N3442 2N3879 2N5293A 2N5954* 2N3265 2N3773 2N5039 2N5672 2N6248 * 41012 41013 2N5671 2N6032 150 to 450V


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PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 2N3055 ta8662 2N6292 2N6488 2N6472 2N6372 2N6248 2N6178 2N6107 2N5954
audio ampli 3w

Abstract:
Text: -66) 675 • Or higher voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P , 2N6107 [P-N-P] mily Designation 2N6472 [N-P-N] 2N6248 [P-N-P] 2N6488 [N-P-N] 2N6491 [P-N-P] 2N5783 , »5 MHz typ. 676 2N6475 vCEB(«-i=nov h,.»30-150 -1.5A fj=5 MHz typ. 676 2N6248 VcerISUSI - -105 V hFE = , -31 526 2N6248 VCER(SUS) - -110\ lc - —14 A (TO-3) 677 2N3441 VCEB(SUSI - 150 V lc = 2 A ITO-661 529 , 2N3442 2N3879 2N5293A 2N5954* 2N3265 2N3773 2N5039 2N5672 2N6248 * 41012 41013 2N5671 2N6032 150 to 450V


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PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 audio ampli 3w 2N3055 2N3440 2N5416 REPLACEMENT 2N3772 APPLICATIONS 2N6292 2N6248 2N6107 2N5956 2N5954 replacement of 2N3053
2N6491 SWITCH

Abstract:
Text: 2N6107 [P-N-P] mily Designation 2N6472 [N-P-N] 2N6248 [P-N-P] 2N6488 [N-P-N] 2N6491 [P-N-P] 2N5783 , »5 MHz typ. 676 2N6475 vCEB(«-i=nov h,.»30-150 -1.5A fj=5 MHz typ. 676 2N6248 VcerISUSI - -105 V hFE = , * -120 I - I-I - I 2N6248 FAMILY lp-n-p] (silicon) fj = 10 MHz min; PT = 125 W max avcex(sus) •lCEV , -6 2N6248 Epitaxial-Base, General Purpose -100 -105 -110* 20-100 -5 -4 -0.2* -5t -100 -1.3 -5 -0.5


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PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 2N6491 SWITCH 2N6489 SWITCH 4-0992 2N6472 2N6372 2N6292 2N6248 2N6107 2N5954 2N6488 SWITCH
2N3440 2N5416 REPLACEMENT

Abstract:
Text: -66) 675 • Or higher voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P , 2N6107 [P-N-P] mily Designation 2N6472 [N-P-N] 2N6248 [P-N-P] 2N6488 [N-P-N] 2N6491 [P-N-P] 2N5783 , »5 MHz typ. 676 2N6475 vCEB(«-i=nov h,.»30-150 -1.5A fj=5 MHz typ. 676 2N6248 VcerISUSI - -105 V hFE = , -31 526 2N6248 VCER(SUS) - -110\ lc - —14 A (TO-3) 677 2N3441 VCEB(SUSI - 150 V lc = 2 A ITO-661 529


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PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 2N3440 2N5416 REPLACEMENT 2N5954 2N6488 2N6472 2N6372 2N6292 2N6248 2N6107 2N5956 2N5781
4-0992

Abstract:
Text: * -120 I - I-I - I 2N6248 FAMILY lp-n-p] (silicon) fj = 10 MHz min; PT = 125 W max avcex(sus) •lCEV , -6 2N6248 Epitaxial-Base, General Purpose -100 -105 -110* 20-100 -5 -4 -0.2* -5t -100 -1.3 -5 -0.5


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PDF 2N6180PLASTIC 2N6181 2N6179 2N6180 2N6178 2N6214 2N6211 2N6212 BUX17 BUX17A 4-0992 2N6213 BUX66C 2n6248
RCA TO-5

Abstract:
Text: -66) 675 • Or higher voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P , 2N6107 [P-N-P] mily Designation 2N6472 [N-P-N] 2N6248 [P-N-P] 2N6488 [N-P-N] 2N6491 [P-N-P] 2N5783 , »5 MHz typ. 676 2N6475 vCEB(«-i=nov h,.»30-150 -1.5A fj=5 MHz typ. 676 2N6248 VcerISUSI - -105 V hFE = , -31 526 2N6248 VCER(SUS) - -110\ lc - —14 A (TO-3) 677 2N3441 VCEB(SUSI - 150 V lc = 2 A ITO-661 529 , * -120 I - I-I - I 2N6248 FAMILY lp-n-p] (silicon) fj = 10 MHz min; PT = 125 W max avcex(sus) •lCEV


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PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 RCA TO-5 2N2016 2N3055 2n3772 2N6372 2N6292 2N6248 2N6107 2N5954 transistor 2N6214
2N3440 2N5416 REPLACEMENT

Abstract:
Text: -66) 675 • Or higher voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P , 2N6107 [P-N-P] mily Designation 2N6472 [N-P-N] 2N6248 [P-N-P] 2N6488 [N-P-N] 2N6491 [P-N-P] 2N5783 , »5 MHz typ. 676 2N6475 vCEB(«-i=nov h,.»30-150 -1.5A fj=5 MHz typ. 676 2N6248 VcerISUSI - -105 V hFE = , -31 526 2N6248 VCER(SUS) - -110\ lc - —14 A (TO-3) 677 2N3441 VCEB(SUSI - 150 V lc = 2 A ITO-661 529


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PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 2N3440 2N5416 REPLACEMENT 2N5954 2N5416 REPLACEMENT 2N5296 RCA 2N5294 replacement 2N6108 RCA 2N3772 RCA transistor BF 257 2N5415 2N5415 REPLACEMENT
2N6214

Abstract:
Text: 2N5298 2N5781 2N5784 2N3442 2N3879 2N5293A 2N5954* 2N3265 2N3773 2N5039 2N5672 2N6248 * 41012 41013 2N5671 , * -120 I - I-I - I 2N6248 FAMILY lp-n-p] (silicon) fj = 10 MHz min; PT = 125 W max avcex(sus) •lCEV , -6 2N6248 Epitaxial-Base, General Purpose -100 -105 -110* 20-100 -5 -4 -0.2* -5t -100 -1.3 -5 -0.5


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PDF lc-30A 130x130 180x180 210x210 BU106 2N5840 2N5240 2N6510 2N6308 2N5805 2N6214 2N6510 2N6308 2N6251 2N5239 2N5840 2N5838 2N5805 2N5240 BU106
2N3055 TO-220

Abstract:
Text: -66) 675 • Or higher voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P , 2N6107 [P-N-P] mily Designation 2N6472 [N-P-N] 2N6248 [P-N-P] 2N6488 [N-P-N] 2N6491 [P-N-P] 2N5783 , »5 MHz typ. 676 2N6475 vCEB(«-i=nov h,.»30-150 -1.5A fj=5 MHz typ. 676 2N6248 VcerISUSI - -105 V hFE = , -31 526 2N6248 VCER(SUS) - -110\ lc - —14 A (TO-3) 677 2N3441 VCEB(SUSI - 150 V lc = 2 A ITO-661 529


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PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 2N3055 TO-220 2N6472 2N6372 2N6292 2N6289 2N6248 2N6107 2N5954 2n5783 ta8662
2001 - Not Available

Abstract:
Text: search for devices beginning " 2N6248 " Semelab Home Datasheets are downloaded as Acrobat PDF files. Bipolar Products PRODUCT 2N6248 2N6248-JQR-B Polarity PNP PNP Package TO3 TO3 VCEO 110V 110V IC(cont) 10A


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PDF 2N5933" 2N5933 30MHz 2N5934" 2N5934 2N6251 2N6260" 2N6260 20MHz
2N6181

Abstract:
Text: -66) 675 • Or higher voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P , 2N6248 VCER(SUS) - -110\ lc - —14 A (TO-3) 677 2N3441 VCEB(SUSI - 150 V lc = 2 A ITO-661 529 (2N6468)t , 2N3442 2N3879 2N5293A 2N5954* 2N3265 2N3773 2N5039 2N5672 2N6248 * 41012 41013 2N5671 2N6032 150 to 450V


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PDF 2N5293 2N5294 ITO-2201 2N6106 2N6107 O-220) 2N5786 2N5783 2N3054 2N5955 2N6181 2N3055 2n3055 complement 2N5495 2n3772 40852 2n3055 application note
TA8662

Abstract:
Text: 2N6107 [P-N-P] mily Designation 2N6472 [N-P-N] 2N6248 [P-N-P] 2N6488 [N-P-N] 2N6491 [P-N-P] 2N5783 , »5 MHz typ. 676 2N6475 vCEB(«-i=nov h,.»30-150 -1.5A fj=5 MHz typ. 676 2N6248 VcerISUSI - -105 V hFE =


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PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 TA8662 2N6491 2N6488 2N6472 2N6372 2N6292 2N6248 2N6108 2N6107 2N5954
npn darlington 400v 15a

Abstract:
Text: voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P 2N3440 VCE0(SUS) - 250 V , - -85 V lc " -4 A (TO-66) 675 2N4348 VCEV(SUS) - 140 V lc = 14 A (TO-31 526 2N6248 VCER(SUS) - -110\ lc , 2N5298 2N5781 2N5784 2N3442 2N3879 2N5293A 2N5954* 2N3265 2N3773 2N5039 2N5672 2N6248 * 41012 41013 2N5671 , * -120 I - I-I - I 2N6248 FAMILY lp-n-p] (silicon) fj = 10 MHz min; PT = 125 W max avcex(sus) •lCEV , -6 2N6248 Epitaxial-Base, General Purpose -100 -105 -110* 20-100 -5 -4 -0.2* -5t -100 -1.3 -5 -0.5


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PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 npn darlington 400v 15a 2N6180 2N3283 2N3879 2N4036 2n3054 2N5322 2N6175 2N6178 2N6179
2N3055 TO-220

Abstract:
Text: -66) 675 • Or higher voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P , 2N6248 VCER(SUS) - -110\ lc - —14 A (TO-3) 677 2N3441 VCEB(SUSI - 150 V lc = 2 A ITO-661 529 (2N6468)t


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PDF 2N5293 2N5294 ITO-2201 2N6106 2N6107 O-220) 2N5786 2N5783 2N3054 2N5955 2N3055 TO-220 2N3055, TO5 complementary-pair 2N5495 to31 2N3055 TO-3
2N6179

Abstract:
Text: 2N5298 2N5781 2N5784 2N3442 2N3879 2N5293A 2N5954* 2N3265 2N3773 2N5039 2N5672 2N6248 * 41012 41013 2N5671 , * -120 I - I-I - I 2N6248 FAMILY lp-n-p] (silicon) fj = 10 MHz min; PT = 125 W max avcex(sus) •lCEV , -6 2N6248 Epitaxial-Base, General Purpose -100 -105 -110* 20-100 -5 -4 -0.2* -5t -100 -1.3 -5 -0.5


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PDF lc-30A 130x130 180x180 210x210 BU106 2N5840 2N5240 2N6510 2N6308 2N5805 2N6179 POWER TRANSISTORS 10A 400v pnp BU106 2N3055 RCA 2N5840 transistor BF 375 2N5805 2N5240 2n5239 complement 2n3442 us
2N5781

Abstract:
Text: -66) 675 • Or higher voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P , 2N6107 [P-N-P] mily Designation 2N6472 [N-P-N] 2N6248 [P-N-P] 2N6488 [N-P-N] 2N6491 [P-N-P] 2N5783 , »5 MHz typ. 676 2N6475 vCEB(«-i=nov h,.»30-150 -1.5A fj=5 MHz typ. 676 2N6248 VcerISUSI - -105 V hFE = , -31 526 2N6248 VCER(SUS) - -110\ lc - —14 A (TO-3) 677 2N3441 VCEB(SUSI - 150 V lc = 2 A ITO-661 529


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PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 2N5781 2N6488 2N6472 2N6372 2N6292 2N6248 2N6180 2N6108 2N6107 2N5954
2N3055

Abstract:
Text: -66) 675 • Or higher voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P , -31 526 2N6248 VCER(SUS) - -110\ lc - —14 A (TO-3) 677 2N3441 VCEB(SUSI - 150 V lc = 2 A ITO-661 529 , * -120 I - I-I - I 2N6248 FAMILY lp-n-p] (silicon) fj = 10 MHz min; PT = 125 W max avcex(sus) •lCEV , -6 2N6248 Epitaxial-Base, General Purpose -100 -105 -110* 20-100 -5 -4 -0.2* -5t -100 -1.3 -5 -0.5


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PDF TQ-66Ã 42x42 130x130 2N6177 2N3439 2N5415 2N358S 2N6213 2N6079 2N3055 RCA 2N3054 transistor 2N5415 2N6175 2N6079 2N5840 2n5038 complement 2n3772 transistor bux 39 2N3439
2N6476 JAN

Abstract:
Text: -66) 675 • Or higher voltage type 2N6248. High-Voltage lc = N-P-N 0.2 A P-N-P 'c = N-P-N 2 A P-N-P , 2N6107 [P-N-P] mily Designation 2N6472 [N-P-N] 2N6248 [P-N-P] 2N6488 [N-P-N] 2N6491 [P-N-P] 2N5783 , »5 MHz typ. 676 2N6475 vCEB(«-i=nov h,.»30-150 -1.5A fj=5 MHz typ. 676 2N6248 VcerISUSI - -105 V hFE = , -31 526 2N6248 VCER(SUS) - -110\ lc - —14 A (TO-3) 677 2N3441 VCEB(SUSI - 150 V lc = 2 A ITO-661 529


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PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 2N6476 JAN 2N6180 40817 2N5954 2N6107 2n6108 RCA Transistor rca 40250 2N6248 2N6292 2N6372
2002 - Not Available

Abstract:
Text: 2N6248 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 110V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 10A All Semelab hermetically sealed products can


Original
PDF 2N6248 O204AA) 18-Jun-02
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