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2N6111 STMicroelectronics Bristol Electronics 626 - -
2N6111 STMicroelectronics Future Electronics 68 $1.56 $0.95
2N6111 Motorola Semiconductor Products Bristol Electronics 55 $0.75 $0.49
2N6111 STMicroelectronics Bristol Electronics 31 $0.75 $0.49
2N6111 RCA Bristol Electronics 48 $0.75 $0.49
2N6111G ON Semiconductor Future Electronics 4,711 $0.39 $0.31
2N6111G ON Semiconductor Rochester Electronics 52,784 $0.47 $0.38
2N6111G ON Semiconductor Farnell element14 595 £0.56 £0.28
2N6111G ON Semiconductor element14 Asia-Pacific 592 $1.08 $0.42
2N6111G ON Semiconductor Allied Electronics & Automation - $0.35 $0.31
2N6111G ON Semiconductor Avnet 1,016 $0.67 $0.53
2N6111G ON Semiconductor Bristol Electronics 2,679 - -
2N6111G ON Semiconductor Chip1Stop 26 $1.24 $0.62
2N6111G ON Semiconductor Chip1Stop 900 $1.15 $0.39
2N6111G ON SEMICONDUCTOR New Advantage Corporation 3,769 $0.78 $0.71
G1109R22N6-111 Glenair Inc Avnet - - -
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2N6111 datasheet (48)

Part Manufacturer Description Type PDF
2N6111 Central Semiconductor NPN SILICON TRANSISTOR Original PDF
2N6111 On Semiconductor POWER TRANSISTORS COMPLEMENTARY SILICON Original PDF
2N6111 On Semiconductor Complementary Silicon Plastic Power Transistor Original PDF
2N6111 On Semiconductor Bipolar Power TO220 PNP 7A 30V; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 Original PDF
2N6111 STMicroelectronics SILICON PNP SWITCHING TRANSISTORS Original PDF
2N6111 STMicroelectronics SILICON PNP SWITCHING TRANSISTORS Original PDF
2N6111 STMicroelectronics TRANS GP BJT PNP 30V 7A 3TO-220 Original PDF
2N6111 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
2N6111 Boca Semiconductor EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Scan PDF
2N6111 Central Semiconductor Power Transistors Scan PDF
2N6111 Continental Device India PNP Plastic Power Transistor Scan PDF
2N6111 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
2N6111 Continental Device India POWER PACKAGE TRANSISTORS (PNP) Scan PDF
2N6111 Continental Device India TO-220 PNP Power Package Transistors Scan PDF
2N6111 Crimson Semiconductor EPITAXIAL BASE Transistor Scan PDF
2N6111 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N6111 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
2N6111 Ferranti Semiconductors Power Transistors 1977 Scan PDF
2N6111 General Electric Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. Scan PDF
2N6111 General Electric TRANSISTOR LEISTUNGS BIPOLAR Scan PDF

2N6111 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2n5292

Abstract: 2N6109 2N6111 2N6288 B0533 2N6107 BS5750 1-12-N 2M6292 2N-6107
Text: 2N6107/09/11 2N6288/90/92 GENERAL PURPOSE COMPLEMENTARY PAIRS DESCRIPTION The 2N6107, 2N6109, 2N6111 , the 2N6107, 2N6109, 2N6111 and their complementary NPN types are the 2N6292, 2N6290 and 2N6288 respectively. TO-220 INTERNAL SCHEMATIC DIAGRAMS ABSOLUTE MAXIMUM RATINGS Symbol PNP 2N6107 2N6109 2N6111 , Collector Cutoff Vce = 40V for 2N6111 /2N6288 0.1 mA Current Vc£= 60V for 2N6109/2N6290 0.1 mA (Vae =-1-5 V) Vc£= 80V for 2N6107/2NS292 0.1 mA Tc* 150°C Vce= 30V for 2N6111 /2N6288 2 mA


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PDF BS5750 2N6107/09/11 2N6288/90/92 2N6107, 2N6109, 2N6111, 2N6288, 2N6290 2N6292 O-220 2n5292 2N6109 2N6111 2N6288 B0533 2N6107 BS5750 1-12-N 2M6292 2N-6107
2N6107

Abstract: 2N6109 2N6111 2N6288 2N6290 2N6292 2N6109 pin 2N-6107
Text: SavantIC Semiconductor Product Specification 2N6107 2N6109 2N6111 Silicon PNP Power , voltage 2N6109 VALUE -40 Open emitter -60 2N6111 Collector-emitter voltage -30 2N6109 Open base 2N6111 VEBO Emitter-base voltage V -80 2N6107 VCEO UNIT -50 , SavantIC Semiconductor Product Specification 2N6107 2N6109 2N6111 Silicon PNP Power Transistors , =-50V; BE=-1.5V,TC=125 -0.1 -2.0 2N6111 ICEX 2N6109 2N6107 Collector cut-off current


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PDF 2N6107 2N6109 2N6111 O-220 2N6288; 2N6290 2N6292 O-220) 2N6107 2N6109 2N6111 2N6288 2N6290 2N6292 2N6109 pin 2N-6107
2N6111

Abstract: No abstract text available
Text: r Z 7 SGS-THOMSON Ä 7 # RaoeifäoiiLißra©«! 2N6107 2N6111 SILICON PNP SWITCHING , INDUSTRIAL EQUIPMENT DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNP silicon transistors in , 80 = 0) = 100 Q .) = 0) 2N6111 40 V 80 40 V 70 30 V 5 V , devices voltage and current values are negative June 1997 1/4 2N6107/ 2N6111 THERMAL DATA , 00 V V Ci fo r 2N 6107 fo r 2N6111 1 1 3.5 V V V V ce = 4 V V ce = 4 V V ce


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PDF 2N6107 2N6111 2N6107 2N6111 O-220
2001 - 2N6111

Abstract: 2N6107 2N6107 datasheets
Text: 2N6107 2N6111 ® SILICON PNP SWITCHING TRANSISTORS s s STMicroelectronics PREFERRED , DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNP silicon transistors in Jedec TO-220 plastic , Unit 2N6107 2N6111 40 V CBO Collector-Base Voltage (I E = 0) 80 V CEX , PNP devices voltage and current values are negative February 2001 1/4 2N6107/ 2N6111 THERMAL , for 2N6107 for 2N6111 Unit 0.1 0.1 1 1 mA mA 1 I CEO Max. V CE = 80 V V


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PDF 2N6107 2N6111 2N6107 2N6111 O-220 O-220 2N6107 datasheets
1997 - 2n6107

Abstract: 2N6111 BD534
Text: 2N6107 2N6111 SILICON PNP SWITCHING TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES PNP , The 2N6107 and 2N6111 are epitaxial-base PNP silicon transistors in Jedec TO-220 plastic package , SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t 2N6107 2N6111 , voltage and current values are negative June 1997 1/4 2N6107/ 2N6111 THERMAL DATA R t hj-ca se , 2N6107 for 2N6111 o T C = 150 C for 2N6107 for 2N6111 Test Cond ition s V CE = 80 V V CE = 40 V


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PDF 2N6107 2N6111 O-220 2N6107 2N6111 O-220 BD534
2006 - 1N5825

Abstract: 2N6107 2N6109 2N6111 2N6288 2N6292 MSD6100
Text: 2N6109 * . . . designed for use in general-purpose amplifier and switching applications. 2N6111 , 3.0 Adc - 2N6111 , 2N6288 = 2.3 (Min) @ IC = 7.0 Adc - All Devices Collector-Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) - 2N6111 , 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107 , Collector-Emitter Voltage Symbol 2N6111 2N6288 2N6109 2N6107 2N6292 4 Unit VCEO 30 50 , March, 2006 - Rev. 6 1 Publication Order Number: 2N6107/D 2N6107 2N6109 2N6111 2N6288 2N6292


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PDF 2N6107 2N6109 2N6111 2N6288 2N6111, 2N6107, 1N5825 2N6107 2N6109 2N6111 2N6288 2N6292 MSD6100
N629

Abstract: 2N6109 2N6292 2N6107 2N6290 2N6111 bi 370 transistor e 2N6288 2N6290-2N61072N6292 Scans-0063468
Text: €” Bondrçi Wire Limit -Second Breakdown Limit —Thermely Limited - Tc-^CtSr^ePUse) I dc 2N6111.2N6288 . , > = 30 v (Min) ' 2N6111 • 2N6288 = 50 V (Min) -2N6109, 2N6290 = 70 V (Min) -2N6107, 2N6292 * DC Current Gain Specified to 7.0 Ampers hFE = 30-150 @ lc =3.0 A - 2N6111 ,2N6292 =2.3(Min) @ lc=7.0A - All Devices MAXIMUM RATINGS THERMAL CHARACTERISTICS PNP NPN 2N6107 2N6288 2N6109 2 N6290 2N6111 2N6292 Characteristic Symbol 2N6111 2N6288 2N6109 2N6290 2N6107 2N6292 Unit Collector-Emitter Voltage VCEO 30 50 70 V


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PDF 2N6111 2N6288 -2N6109, 2N6290 -2N6107, 2N6292 2N6111 2N6107 N629 2N6109 2N6292 2N6290 bi 370 transistor e 2N6288 2N6290-2N61072N6292 Scans-0063468
2011 - 2n6288

Abstract: 2n6111
Text: ORDERING INFORMATION Device 2N6107 2N6107G 2N6109 2N6109G 2N6111 2N6111G 2N6288 2N6288G 2N6292 2N6292G , PNP - 2N6107, 2N6109, 2N6111 ; NPN - 2N6288, 2N6292 Complementary Silicon Plastic Power Transistors , 3.0 Adc - 2N6111 , 2N6288 = 2.3 (Min) @ IC = 7.0 Adc - All Devices Collector-Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) - 2N6111 , 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107, 2N6292 , Symbol 2N6111 , 2N6288 2N6109 2N6107, 2N6292 2N6111 , 2N6288 2N6109 2N6107, 2N6292 VCEO Value 30 50 70 40


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PDF 2N6107, 2N6109, 2N6111; 2N6288, 2N6292 2N6111, 2N6288 2N6109 2n6288 2n6111
2002 - 2N6107

Abstract: 2N6111/2n6288 2N6109 2N6111 MSD6100 1N5825 2N6288 2N6292
Text: designed for use in general­purpose amplifier and switching applications. 2N6111 2N6109 * NPN · , 2N6111 , 2N6288 = 2.3 (Min) @ IC = 7.0 Adc - All Devices Collector­Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) - 2N6111 , 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107, 2N6292 , 50 70 Vdc 40 VCEO VCB 2N6111 2N6288 30 Symbol 60 80 Vdc VEB IC , 2N6107 2N6109 2N6111 2N6288 2N6292 PD, POWER DISSIPATION (WATTS) 40 30 20 10 0 0


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PDF 2N6107 2N6111 2N6109 2N6288 2N6111, 2N6107, 2N6107 2N6111/2n6288 2N6109 2N6111 MSD6100 1N5825 2N6288 2N6292
Not Available

Abstract: No abstract text available
Text: Symbol Collector-Emitter Voltage 2N6111.2N6288 2N6109 2N6107, 2N6292 Collector-Base Voltage 2N6111 , 2N6288 2N6109 2N6107, 2N6292 Value Unit Vdc VCEO 30 50 70 VCB Vdc 40 60 , )227-6005 FAX: (973) 376-8960 PNP - 2N6107, 2N6109, 2N6111 ; NPN - 2N6288, 2N6292 2N6109 and 2N6292 , Specified to 7.0 Amperes hFE = 30-150 @ Ic = 3.0 Adc - 2N6111 , 2N6288 = 2.3 (Min) @ Ic = 7.0 Adc - All Devices • Collector-Emitter Sustaining Voltage VCEO(SUS) = 30 Vdc (Min) - 2N6111 , 2N6288 = 50 Vdc (Min


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PDF 2N6107, 2N6109, 2N6111; 2N6288, 2N6292 2N6109 2N6292 2N6111, 2N6288
2001 - 2N6288

Abstract: 2N6111 2N6109 1N5825 2N6107 2N6292 MSD6100
Text: designed for use in general­purpose amplifier and switching applications. 2N6111 2N6109 * NPN · , 2N6111 , 2N6288 = 2.3 (Min) @ IC = 7.0 Adc - All Devices Collector­Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) - 2N6111 , 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107, 2N6292 , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS Symbol 2N6111 2N6288 2N6109 2N6107 2N6292 Unit VCEO 30 , Order Number: 2N6107/D 2N6107 2N6109 2N6111 2N6288 2N6292 PD, POWER DISSIPATION (WATTS) 40


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PDF 2N6107 2N6111 2N6109 2N6288 2N6111, 2N6107, 2N6288 2N6111 2N6109 1N5825 2N6107 2N6292 MSD6100
2002 - 2N6107

Abstract: 2N6111/2n6288 equivalents transistor 2n6109 1N5825 2N6109 2N6111 2N6288 2N6292 MSD6100
Text: designed for use in general­purpose amplifier and switching applications. 2N6111 2N6109 * NPN · , 2N6111 , 2N6288 = 2.3 (Min) @ IC = 7.0 Adc - All Devices Collector­Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) - 2N6111 , 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107, 2N6292 , Temperature Range 2N6109 2N6107 2N6292 Unit 50 70 Vdc 40 VCEO VCB 2N6111 2N6288 , . 5 1 Publication Order Number: 2N6107/D 2N6107 2N6109 2N6111 2N6288 2N6292 PD, POWER


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PDF 2N6107 2N6111 2N6109 2N6288 2N6111, 2N6107, 2N6107 2N6111/2n6288 equivalents transistor 2n6109 1N5825 2N6109 2N6111 2N6288 2N6292 MSD6100
1997 - 2N6111

Abstract: 2N6107
Text: 2N6107 2N6111 SILICON PNP SWITCHING TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES PNP , -220 DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNP silicon transistors in Jedec TO-220 plastic , CBO Collector-Base Voltage (I E = 0) 2N6111 80 40 V V CEX Collector-Emitter , devices voltage and current values are negative June 1997 1/4 2N6107/ 2N6111 THERMAL DATA R , for 2N6111 Unit 0.1 0.1 1 1 mA mA 1 I CEO Max. V CE = 80 V V CE = 40 V


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PDF 2N6107 2N6111 O-220 2N6107 2N6111 O-220
2007 - 2N6292

Abstract: 2N6109 2N6292G 2N6288 2N6111 2N6109G 2N6107 2N6107G 1N5825 equivalents transistor 2n6109
Text: 2N6111 2N6111G Shipping 50 Units / Rail TO-220AB 2N6292 TO-220AB (Pb-Free) http , PNP - 2N6107, 2N6109, 2N6111 ; NPN - 2N6288, 2N6292 2N6109 and 2N6292 are Preferred Devices , = 30-150 @ IC = 3.0 Adc - 2N6111 , 2N6288 = 2.3 (Min) @ IC = 7.0 Adc - All Devices ·Collector-Emitter Sustaining Voltage VCEO(sus) = 30 Vdc (Min) - 2N6111 , 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc , Symbol Collector-Emitter Voltage Value Unit VCEO Collector-Base Voltage VCB 2N6111


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PDF 2N6107, 2N6109, 2N6111; 2N6288, 2N6292 2N6109 2N6292 2N6111, 2N6288 2N6292G 2N6288 2N6111 2N6109G 2N6107 2N6107G 1N5825 equivalents transistor 2n6109
2N6111

Abstract: No abstract text available
Text: , 2N6109, 2N6111 , 2N6288, 2N6290 and 2N6292 are epitaxial-base silicon transistors In Jedec TO , applications. The PNP types are the 2N6107, 2N6109, 2N6111 and their complementary NPN types are the 2N6292 , 2N6109 2N6111 NPN Symbol 2N6292 2N6290 2N6288 Unit VcBO Collector-base Voltage (lE = 0 , 2N6111 /2N6288 for 2N6109/2N6290 for 2N6107/2N6292 Min. Max. Unit 0.1 0.1 0.1 mA mA mA for 2N6111 /2N6288 for 2N6109/2N6290 for 2N6107/2N6292 2 2 2 mA mA mA Typ. I


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PDF 7TBT537 2N6107/09/11 2N6288/90/92 2N6107, 2N6109, 2N6111, 2N6288, 2N6290 2N6292 O-220 2N6111
2N6109

Abstract: 2N6292 2N6292G 2N6111 2N6107 2N6107G 2N6288 TO-220AB transistor package 2N6109G 2N6288G
Text: 2N6111 2N6111G Shipping 50 Units / Rail TO-220AB 2N6292 TO-220AB (Pb-Free) 4 50 , PNP - 2N6107, 2N6109, 2N6111 ; NPN - 2N6288, 2N6292 2N6109 and 2N6292 are Preferred Devices , @ IC = 3.0 Adc - 2N6111 , 2N6288 = 2.3 (Min) @ IC = 7.0 Adc - All Devices ·Collector-Emitter Sustaining Voltage VCEO(sus) = 30 Vdc (Min) - 2N6111 , 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - , 40 60 80 2N6111 , 2N6288 2N6109 2N6107, 2N6292 2 3 Vdc 30 50 70 2N6111 , 2N6288


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PDF 2N6107, 2N6109, 2N6111; 2N6288, 2N6292 2N6109 2N6292 2N6111, 2N6288 2N6292G 2N6111 2N6107 2N6107G 2N6288 TO-220AB transistor package 2N6109G 2N6288G
2013 - 2N6109

Abstract: 2n6107 2N6111 2n6292 2N-6107
Text: 2N6107 2N6109 2N6111 2N6288 2N6290 2N6292 PNP NPN w w w. c e n t r a l s e m i . c o m , Storage Junction Temperature Thermal Resistance 2N6111 2N6109 2N6107 SYMBOL 2N6288 2N6290 2N6292 VCBO 40 , =20V ( 2N6111 , 2N6288) ICEO VCE=40V (2N6109, 2N6290) ICEO VCE=60V (2N6107, 2N6292) IEBO VEB=5.0V BVCEO IC=100mA ( 2N6111 , 2N6288) 30 BVCEO IC=100mA (2N6109, 2N6290) 50 BVCEO IC=100mA (2N6107, 2N6292) 70 VCE(SAT) VBE(ON , =4.0V, IC=2.5A (2N6109, 2N6290) VCE=4.0V, IC=3.0A ( 2N6111 , 2N6288) VCE=4.0V, IC=7.0A VCE=4.0V, IC=0.5A, f


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PDF 2N6107 2N6109 2N6111 2N6288 2N6290 2N6292 2N6107, O-220 2n6292 2N-6107
Not Available

Abstract: No abstract text available
Text: * DC Current Gain Specified to 7.0 Amperes hpE = 3 0 -1 5 0 @ Iq = 3.0 Ade — 2N6111 , 2N6288 = 2.3 , 30 Vdc (Min) — 2N6111 , 2N6288 = 50 Vdc (Min) — 2N6109 = 70 Vdc (Min) — 2N6107, 2N6292 High , ) @ I q = 500 mAdc — 2N6107, 09, 11 T O -220A B Compact Package 2N6111 NPN 2 N 62 88 2N 62 , Symbol 2N6111 2N6288 2N6109 2N6107 2N6292 Unit v CEO 30 50 70 Vdc C o , , Inc. 1995 (W) MOTOROLA 2N6107 2N6109 2N6111 2N6288 2N6292 ‘ ELECTRICAL CHARACTERISTICS (T


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PDF 2N6107/D 2N6057 2N6059 2N6050) 2N6109* 2N6111, 2N6288 2N6109
2013 - Not Available

Abstract: No abstract text available
Text: Device 2N6107G 2N6109G 2N6111G 2N6288G 2N6292G Device Marking 2N6107 2N6109 2N6111 2N6288 2N6292 Package , 2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors , Collector-Emitter Voltage 2N6111 , 2N6288 2N6109 2N6107, 2N6292 Collector-Base Voltage 2N6111 , 2N6288 2N6109 2N6107 , , 2013 - Rev. 10 Publication Order Number: 2N6107/D 2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 , CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 3) (IC = 100 mAdc, IB = 0) 2N6111 , 2N6288 2N6109 2N6107


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PDF 2N6107, 2N6109, 2N6111 2N6288, 2N6292 O-220 2N6111, 2N6288 2N6109
2011 - Not Available

Abstract: No abstract text available
Text: ˆ’220AB 2N6288 2N6288G 50 Units / Rail TO−220AB 2N6109 2N6111 2N6111G Shipping 50 Units , PNP - 2N6107, 2N6109, 2N6111 ; NPN - 2N6288, 2N6292 Complementary Silicon Plastic Power , €¢ hFE = 30−150 @ IC = 3.0 Adc − 2N6111 , 2N6288 = 2.3 (Min) @ IC = 7.0 Adc − All Devices Collector−Emitter Sustaining Voltage − VCEO(sus) = 30 Vdc (Min) − 2N6111 , 2N6288 = 50 Vdc (Min) − 2N6109 = , (Note 1) Rating Symbol Collector−Emitter Voltage 2N6111 , 2N6288 2N6109 2N6107, 2N6292


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PDF 2N6107, 2N6109, 2N6111; 2N6288, 2N6292 2N6111, 2N6288 2N6109
2006 - 2N6292G

Abstract: 2N6292 equivalents transistor 2n6109 2N6107 pnp power 300 watts amplifier circuit diagram 2N6111/2n6288 2N6109G 2N6109 2N6107G
Text: 2N6111 2N6111G Shipping 50 Units / Rail TO-220AB 2N6292 TO-220AB (Pb-Free) http , PNP - 2N6107, 2N6109, 2N6111 ; NPN - 2N6288, 2N6292 2N6109 and 2N6292 are Preferred Devices , · · · · hFE = 30-150 @ IC = 3.0 Adc - 2N6111 , 2N6288 = 2.3 (Min) @ IC = 7.0 Adc - All Devices Collector-Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) - 2N6111 , 2N6288 = 50 Vdc (Min , Vdc 30 50 70 2N6111 , 2N6288 2N6109 2N6107, 2N6292 Collector-Base Voltage VCB 2N6111


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PDF 2N6107, 2N6109, 2N6111; 2N6288, 2N6292 2N6109 2N6292 2N6111, 2N6288 2N6292G equivalents transistor 2n6109 2N6107 pnp power 300 watts amplifier circuit diagram 2N6111/2n6288 2N6109G 2N6107G
2002 - 2n6111

Abstract: 2N6107 2n6292 transistor 2N6292 2N6111 pin 2N6109
Text: in general-purpose amplifier and switching applications. 2N6107 2N6109 * 2N6111 NPN · DC Current Gain Specified to 7.0 Amperes hFE = 30-150 @ IC = 3.0 Adc - 2N6111 , 2N6288 = 2.3 (Min) @ IC = 7.0 Adc - All Devices Collector-Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) - 2N6111 , ÎÎÎ *MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB PD 2N6111 2N6288 30 40 2N6109 50 60 2N6107 , April, 2002 - Rev. 5 Publication Order Number: 2N6107/D 2N6107 2N6109 2N6111 2N6288 2N6292 40 PD


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PDF 2N6107 2N6109 2N6111 2N6111, 2N6288 2N6107, 2N6292 2n6111 2n6292 transistor 2N6111 pin 2N6109
transistor 40409

Abstract: 40409 Transistor 40408 transistor 40409 TRANSISTOR 40389 2n2102 40409 silicon class ab audio amplifier circuit transistor 2n3055 300W TRANSISTOR AUDIO AMPLIFIER 40361
Text: P-N-P N-P-N P-N-P KJ-_ DJ, KJ D_KJ_P 6.5 18 12W IC Driving True Comp. 40979 (2N6292) 40980 ( 2N6111 ) - - - - - True Comp. 40816 (2N5495) (2N6269) 40817 ( 2N6111 ) - 40815 (2N4036) - - - 16 45 25W Comp , ) 40876 ( 2N6111 ) 40635 (2N2102) 40634'' (2N4036) - 40360 (2N2102) - Quasi-Comp. - - 40360 (2N2102 , (2N6292 ) 40872 ( 2N6111 ) - 40594 (2N6320) 40595 (2N5322) 40 Quasi-Comp. 40636 (2N3055) - 40594 (2N5320 , ) - 40871 (2N6292) 40872 ( 2N6111 ) - 40987 (2N5416) 130W 300W 200W Quasi-Comp. Paral. out. (6) 40988


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PDF 2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) transistor 40409 40409 Transistor 40408 transistor 40409 TRANSISTOR 40389 2n2102 40409 silicon class ab audio amplifier circuit transistor 2n3055 300W TRANSISTOR AUDIO AMPLIFIER 40361
1995 - 2N6292

Abstract: motorola 2N6109 transistor 2n6107 MOTOROLA 2N6111 2N6107 2N6059 2N6057 2N6050 1N5825 2N6288
Text: 7.0 Amperes hFE = 30­150 @ IC = 3.0 Adc - 2N6111 , 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc - All Devices · Collector­Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) - 2N6111 , 2N6288 VCEO(sus , - 2N6107, 09, 11 · TO­220AB Compact Package 2N6111 NPN 2N6288 * 2N6292 , WATTS *MAXIMUM RATINGS Rating 2N6111 2N6288 Collector­Emitter Voltage Emitter­Base Voltage , 1.0 30 30 30 2.3 2N6107, 2N6292 2N6109 2N6111 , 2N6288 All Devices Min 150 150 150


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PDF 2N6107/D 2N6057 2N6059 2N6050) 2N6107 2N6109* 2N6111, 2N6288 2N6292 motorola 2N6109 transistor 2n6107 MOTOROLA 2N6111 2N6107 2N6059 2N6050 1N5825 2N6288
2N8111

Abstract: 2N6107 2N811 2N6109
Text: 7.0 Amperes hFE = 30-150 @ lc = 3.0 Adc - 2N6111 , 2N6288 = 2.3 (Min) @ lc - 7-0 Adc - All Devices , 2N6107 2N6109* 2N6111 NPN 2N6288 2N6292* "Motorola Prtferrtd D«vlc« PNP · 'MAXIMUM RATINGS , Motorola Bipolar Power Transistor Device Data 3-101 2N6107 2N6109 2N6111 2N6288 2N6292 ' ELECTRICAL , Sustaining Voltage (1) (IQ - 100 mAdc, Ib - 0) VCEO(sus) 2N6111 , 2N6288 2N6109 2N6107, 2N6292 'CEO 2N6111 , 2N6288 2N6109 2N6107, 2N6292 ICEX 2N6111 , 2N6288 2N6109 2N6107, 2N6292 2N6111 , 2N6288 2N6109 2N6107


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PDF 2N6111, 2N6288 2N6109 2N6107 2N6292 2N6288 T0-220AB 2N8111 2N811 2N6109
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