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2N6107 Central Semiconductor Corp Power Bipolar Transistor, 7A I(C), 70V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
2N6107 LEAD FREE Central Semiconductor Corp TRANS PNP 70V 7A TO-220
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2N6107 Central Semiconductor Corp Future Electronics 213 $3.05 $1.93
2N6107 Solid State Devices Inc (SSDI) Bristol Electronics 24 $0.94 $0.61
2N6107 Motorola Semiconductor Products Bristol Electronics 3 - -
2N6107 NTE Electronics Inc Newark element14 158 $1.64 $1.26
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2N6107 General Electric Company Chip One Exchange 582 - -
2N6107 SPC Multicomp element14 Asia-Pacific 14 $0.93 $0.49
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2N6107G ON Semiconductor RS Components 260 £0.63 £0.48
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2N6107G ON Semiconductor Chip1Stop 14 $0.46 $0.46
2N6107G ON Semiconductor Rochester Electronics 2,541 $0.60 $0.49
2N6107G ON Semiconductor element14 Asia-Pacific 198 $0.96 $0.31
2N6107G ON Semiconductor Avnet - $0.86 $0.30
2N6107G ON Semiconductor Farnell element14 198 £0.62 £0.30
2N6107G ON Semiconductor Avnet 1,475 €0.36 €0.23
2N6107G ON SEMICONDUCTOR New Advantage Corporation 1,050 $0.79 $0.72

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2N6107 datasheet (68)

Part Manufacturer Description Type PDF
2N6107 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 70V 7A TO-220 Original PDF
2N6107 Central Semiconductor NPN SILICON TRANSISTOR Original PDF
2N6107 Micro Commercial Components TRANS GP BJT PNP 70V 7A 3TO-220 Original PDF
2N6107 On Semiconductor Complementary Silicon Plastic Power Transistors Original PDF
2N6107 On Semiconductor Bipolar Power TO220 PNP 7A 70V; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 Original PDF
2N6107 STMicroelectronics TRANS GP BJT PNP 70V 7A 3TO-220 Original PDF
2N6107 STMicroelectronics SILICON PNP SWITCHING TRANSISTORS Original PDF
2N6107 USHA PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. Original PDF
2N6107 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
2N6107 Boca Semiconductor EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Scan PDF
2N6107 Central Semiconductor Power Transistors Scan PDF
2N6107 Continental Device India POWER PACKAGE TRANSISTORS (PNP) Scan PDF
2N6107 Continental Device India Plastic Power Transistor Scan PDF
2N6107 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
2N6107 Continental Device India TO-220 PNP Power Package Transistors Scan PDF
2N6107 Crimson Semiconductor EPITAXIAL BASE Transistor Scan PDF
2N6107 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N6107 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
2N6107 Ferranti Semiconductors Power Transistors 1977 Scan PDF
2N6107 General Electric Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. Scan PDF

2N6107 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2n5292

Abstract: 2N6109 2N6111 2N6288 B0533 2N6107 BS5750 1-12-N 2M6292 2N-6107
Text: 2N6107 /09/11 2N6288/90/92 GENERAL PURPOSE COMPLEMENTARY PAIRS DESCRIPTION The 2N6107 , 2N6109, 2N6111 , the 2N6107 , 2N6109, 2N6111 and their complementary NPN types are the 2N6292, 2N6290 and 2N6288 respectively. TO-220 INTERNAL SCHEMATIC DIAGRAMS ABSOLUTE MAXIMUM RATINGS Symbol PNP 2N6107 2N6109 2N6111 , . England 2N6107 /09/11-2N 628 8/90/9 2 THERMAL DATA Rth j-cas« Thermal Resistance Junction-case Max 3.12 , =-1-5 V) Vc£= 80V for 2N6107 /2NS292 0.1 mA Tc* 150°C Vce= 30V for 2N6111/2N6288 2 mA


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PDF BS5750 2N6107/09/11 2N6288/90/92 2N6107, 2N6109, 2N6111, 2N6288, 2N6290 2N6292 O-220 2n5292 2N6109 2N6111 2N6288 B0533 2N6107 BS5750 1-12-N 2M6292 2N-6107
2011 - 2n6288

Abstract: 2n6111
Text: ORDERING INFORMATION Device 2N6107 2N6107G 2N6109 2N6109G 2N6111 2N6111G 2N6288 2N6288G 2N6292 2N6292G , PNP - 2N6107 , 2N6109, 2N6111; NPN - 2N6288, 2N6292 Complementary Silicon Plastic Power Transistors , - VCEO(sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107 , 2N6292 , ) @ IC = 500 mAdc - 2N6107 , 09, 11 TO-220AB Compact Package Pb-Free Packages are Available* Rating Symbol 2N6111, 2N6288 2N6109 2N6107 , 2N6292 2N6111, 2N6288 2N6109 2N6107 , 2N6292 VCEO Value 30 50 70 40


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PDF 2N6107, 2N6109, 2N6111; 2N6288, 2N6292 2N6111, 2N6288 2N6109 2n6288 2n6111
2N6107

Abstract: 2N6109 2N6111 2N6288 2N6290 2N6292 2N6109 pin 2N-6107
Text: SavantIC Semiconductor Product Specification 2N6107 2N6109 2N6111 Silicon PNP Power , Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2N6107 VCBO Collector-base , 2N6109 Open base 2N6111 VEBO Emitter-base voltage V -80 2N6107 VCEO UNIT -50 , SavantIC Semiconductor Product Specification 2N6107 2N6109 2N6111 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6107 VCEO(SUS


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PDF 2N6107 2N6109 2N6111 O-220 2N6288; 2N6290 2N6292 O-220) 2N6107 2N6109 2N6111 2N6288 2N6290 2N6292 2N6109 pin 2N-6107
2N6111

Abstract: No abstract text available
Text: 2N6107 /09/11 2N6288/90/92 3DE 3 > GENERAL PURPOSE COMPLEMENTARY PAIRS DESCRIPTION The 2N6107 , applications. The PNP types are the 2N6107 , 2N6109, 2N6111 and their complementary NPN types are the 2N6292, 2N6290 and 2N6288 respectively. INTERNAL SCHEMATIC DIAGRAMS ABSOLUTE MAXIMUM RATINGS PNP 2N6107 , 2N6107 /09/11-2N6288/90/92 THERMAL DATA Rth j-case Rth j-amb 7 c 2 c 237 l ] 002=3368 b 6 , 2N6111/2N6288 for 2N6109/2N6290 for 2N6107 /2N6292 Min. Max. Unit 0.1 0.1 0.1 mA mA


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PDF 7TBT537 2N6107/09/11 2N6288/90/92 2N6107, 2N6109, 2N6111, 2N6288, 2N6290 2N6292 O-220 2N6111
Not Available

Abstract: No abstract text available
Text: )227-6005 FAX: (973) 376-8960 PNP - 2N6107 , 2N6109, 2N6111; NPN - 2N6288, 2N6292 2N6109 and 2N6292 , ) - 2N6109 = 70 Vdc (Min) - 2N6107 , 2N6292 • High Current Gain - Bandwidth Product f T = 4.0 MHz (Min) @ Ic = 500 mAdc - 2N6288, 90, 92 = 10 MHz (Min) @ Ic = 500 mAdc - 2N6107 , 09, U • TO , Symbol Collector-Emitter Voltage 2N6111.2N6288 2N6109 2N6107 , 2N6292 Collector-Base Voltage 2N6111, 2N6288 2N6109 2N6107 , 2N6292 Value Unit Vdc VCEO 30 50 70 VCB Vdc 40 60


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PDF 2N6107, 2N6109, 2N6111; 2N6288, 2N6292 2N6109 2N6292 2N6111, 2N6288
N629

Abstract: 2N6109 2N6292 2N6107 2N6290 2N6111 bi 370 transistor e 2N6288 2N6290-2N61072N6292 Scans-0063468
Text: > = 30 v (Min) ' 2N6111 • 2N6288 = 50 V (Min) -2N6109, 2N6290 = 70 V (Min) - 2N6107 , 2N6292 * DC , Devices MAXIMUM RATINGS THERMAL CHARACTERISTICS PNP NPN 2N6107 2N6288 2N6109 2 N6290 2N6111 2N6292 Characteristic Symbol 2N6111 2N6288 2N6109 2N6290 2N6107 2N6292 Unit Collector-Emitter Voltage VCEO 30 50 70 V , 2.98 O 3.70 3.90 2N6107 , 2N6109, 2N 6111 PNP 12N6288, 2N6290, 2N6292 NPN ELECTRICAL CHARACTERISTICS , Collector - Emitter Sustaining Voltage (1) (lc = 100 mA, lB = 0) 2N6111, 2N6288 2N6109, 2N6290 2N6107


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PDF 2N6111 2N6288 -2N6109, 2N6290 -2N6107, 2N6292 2N6111 2N6107 N629 2N6109 2N6292 2N6290 bi 370 transistor e 2N6288 2N6290-2N61072N6292 Scans-0063468
2006 - 1N5825

Abstract: 2N6107 2N6109 2N6111 2N6288 2N6292 MSD6100
Text: ON Semiconductor ) PNP 2N6107 Complementary Silicon Plastic Power Transistors , Voltage - VCEO(sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107 , 10 MHz (Min) @ IC = 500 mAdc - 2N6107 , 09, 11 TO-220AB Compact Package 2N6292* *ON , Collector-Emitter Voltage Symbol 2N6111 2N6288 2N6109 2N6107 2N6292 4 Unit VCEO 30 50 , March, 2006 - Rev. 6 1 Publication Order Number: 2N6107 /D 2N6107 2N6109 2N6111 2N6288 2N6292


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PDF 2N6107 2N6109 2N6111 2N6288 2N6111, 2N6107, 1N5825 2N6107 2N6109 2N6111 2N6288 2N6292 MSD6100
Not Available

Abstract: No abstract text available
Text: MOTOROLA Order this document by 2N6107 /D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 , 30 Vdc (Min) — 2N6111, 2N6288 = 50 Vdc (Min) — 2N6109 = 70 Vdc (Min) — 2N6107 , 2N6292 High , ) @ I q = 500 mAdc — 2N6107 , 09, 11 T O -220A B Compact Package 2N6111 NPN 2 N 62 88 2N 62 , Symbol 2N6111 2N6288 2N6109 2N6107 2N6292 Unit v CEO 30 50 70 Vdc C o , , Inc. 1995 (W) MOTOROLA 2N6107 2N6109 2N6111 2N6288 2N6292 ‘ ELECTRICAL CHARACTERISTICS (T


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PDF 2N6107/D 2N6057 2N6059 2N6050) 2N6109* 2N6111, 2N6288 2N6109
2002 - 2N6107

Abstract: 2N6111/2n6288 equivalents transistor 2n6109 1N5825 2N6109 2N6111 2N6288 2N6292 MSD6100
Text: ON Semiconductor ) PNP Complementary Silicon Plastic Power Transistors 2N6107 . . . , (sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107 , 2N6292 , (Min) @ IC = 500 mAdc - 2N6107 , 09, 11 TO­220AB Compact Package 2N6292* *ON Semiconductor , Temperature Range 2N6109 2N6107 2N6292 Unit 50 70 Vdc 40 VCEO VCB 2N6111 2N6288 , . 5 1 Publication Order Number: 2N6107 /D 2N6107 2N6109 2N6111 2N6288 2N6292 PD, POWER


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PDF 2N6107 2N6111 2N6109 2N6288 2N6111, 2N6107, 2N6107 2N6111/2n6288 equivalents transistor 2n6109 1N5825 2N6109 2N6111 2N6288 2N6292 MSD6100
2001 - 2N6111

Abstract: 2N6107 2N6107 datasheets
Text: 2N6107 2N6111 ® SILICON PNP SWITCHING TRANSISTORS s s STMicroelectronics PREFERRED , DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNP silicon transistors in Jedec TO-220 plastic , Unit 2N6107 2N6111 40 V CBO Collector-Base Voltage (I E = 0) 80 V CEX , PNP devices voltage and current values are negative February 2001 1/4 2N6107 /2N6111 THERMAL , for 2N6107 for 2N6111 Unit 0.1 0.1 1 1 mA mA 1 I CEO Max. V CE = 80 V V


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PDF 2N6107 2N6111 2N6107 2N6111 O-220 O-220 2N6107 datasheets
1997 - 2n6107

Abstract: 2N6111 BD534
Text: 2N6107 2N6111 SILICON PNP SWITCHING TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES PNP , The 2N6107 and 2N6111 are epitaxial-base PNP silicon transistors in Jedec TO-220 plastic package , SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t 2N6107 2N6111 , voltage and current values are negative June 1997 1/4 2N6107 /2N6111 THERMAL DATA R t hj-ca se , 2N6107 for 2N6111 o T C = 150 C for 2N6107 for 2N6111 Test Cond ition s V CE = 80 V V CE = 40 V


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PDF 2N6107 2N6111 O-220 2N6107 2N6111 O-220 BD534
2007 - 2N6292

Abstract: 2N6109 2N6292G 2N6288 2N6111 2N6109G 2N6107 2N6107G 1N5825 equivalents transistor 2n6109
Text: 2N6107 2N6107G TO-220AB 2N6107 TO-220AB (Pb-Free) 2N6109 2N6109G TO-220AB (Pb-Free , PNP - 2N6107 , 2N6109, 2N6111; NPN - 2N6288, 2N6292 2N6109 and 2N6292 are Preferred Devices , (Min) - 2N6107 , 2N6292 ·High Current Gain - Bandwidth Product fT = 4.0 MHz (Min) @ IC = 500 mAdc - 2N6288, 90, 92 = 10 MHz (Min) @ IC = 500 mAdc - 2N6107 , 09, 11 ·TO-220AB Compact Package ·Pb-Free , , 2N6288 2N6109 2N6107 , 2N6292 Emitter-Base Voltage 2 3 Vdc 30 50 70 2N6111, 2N6288


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PDF 2N6107, 2N6109, 2N6111; 2N6288, 2N6292 2N6109 2N6292 2N6111, 2N6288 2N6292G 2N6288 2N6111 2N6109G 2N6107 2N6107G 1N5825 equivalents transistor 2n6109
2N6109

Abstract: 2N6292 2N6292G 2N6111 2N6107 2N6107G 2N6288 TO-220AB transistor package 2N6109G 2N6288G
Text: 2N6107 2N6107G TO-220AB 2N6107 TO-220AB (Pb-Free) 2N6109 2N6109G TO-220AB (Pb-Free , PNP - 2N6107 , 2N6109, 2N6111; NPN - 2N6288, 2N6292 2N6109 and 2N6292 are Preferred Devices , 2N6107 , 2N6292 ·High Current Gain - Bandwidth Product fT = 4.0 MHz (Min) @ IC = 500 mAdc - 2N6288, 90, 92 = 10 MHz (Min) @ IC = 500 mAdc - 2N6107 , 09, 11 ·TO-220AB Compact Package ·Pb-Free Packages are , 40 60 80 2N6111, 2N6288 2N6109 2N6107 , 2N6292 2 3 Vdc 30 50 70 2N6111, 2N6288


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PDF 2N6107, 2N6109, 2N6111; 2N6288, 2N6292 2N6109 2N6292 2N6111, 2N6288 2N6292G 2N6111 2N6107 2N6107G 2N6288 TO-220AB transistor package 2N6109G 2N6288G
2002 - 2N6107

Abstract: 2N6111/2n6288 2N6109 2N6111 MSD6100 1N5825 2N6288 2N6292
Text: ON Semiconductor ) PNP Complementary Silicon Plastic Power Transistors 2N6107 . . . , (sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107 , 2N6292 , (Min) @ IC = 500 mAdc - 2N6107 , 09, 11 TO­220AB Compact Package 2N6292* *ON Semiconductor , _C Derate above 25_C Operating and Storage Junction Temperature Range 2N6109 2N6107 2N6292 Unit , Components Industries, LLC, 2002 April, 2002 ­ Rev. 5 1 Publication Order Number: 2N6107 /D


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PDF 2N6107 2N6111 2N6109 2N6288 2N6111, 2N6107, 2N6107 2N6111/2n6288 2N6109 2N6111 MSD6100 1N5825 2N6288 2N6292
2013 - Not Available

Abstract: No abstract text available
Text: Device 2N6107G 2N6109G 2N6111G 2N6288G 2N6292G Device Marking 2N6107 2N6109 2N6111 2N6288 2N6292 Package , 2N6107 , 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors , Collector-Emitter Voltage 2N6111, 2N6288 2N6109 2N6107 , 2N6292 Collector-Base Voltage 2N6111, 2N6288 2N6109 2N6107 , , 2013 - Rev. 10 Publication Order Number: 2N6107 /D 2N6107 , 2N6109, 2N6111 (PNP), 2N6288, 2N6292 , CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 3) (IC = 100 mAdc, IB = 0) 2N6111, 2N6288 2N6109 2N6107


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PDF 2N6107, 2N6109, 2N6111 2N6288, 2N6292 O-220 2N6111, 2N6288 2N6109
2011 - Not Available

Abstract: No abstract text available
Text: INFORMATION Device Device Marking Package 2N6107 2N6107G TO−220AB 2N6107 TOâ , PNP - 2N6107 , 2N6109, 2N6111; NPN - 2N6288, 2N6292 Complementary Silicon Plastic Power , 70 Vdc (Min) − 2N6107 , 2N6292 High Current Gain − Bandwidth Product fT = 4.0 MHz (Min) @ IC = 500 mAdc − 2N6288, 90, 92 = 10 MHz (Min) @ IC = 500 mAdc − 2N6107 , 09, 11 TO−220AB Compact , (Note 1) Rating Symbol Collector−Emitter Voltage 2N6111, 2N6288 2N6109 2N6107 , 2N6292


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PDF 2N6107, 2N6109, 2N6111; 2N6288, 2N6292 2N6111, 2N6288 2N6109
2006 - 2N6292G

Abstract: 2N6292 equivalents transistor 2n6109 2N6107 pnp power 300 watts amplifier circuit diagram 2N6111/2n6288 2N6109G 2N6109 2N6107G
Text: 2N6107 2N6107G TO-220AB 2N6107 TO-220AB (Pb-Free) 2N6109 2N6109G TO-220AB (Pb-Free , PNP - 2N6107 , 2N6109, 2N6111; NPN - 2N6288, 2N6292 2N6109 and 2N6292 are Preferred Devices , ) - 2N6109 = 70 Vdc (Min) - 2N6107 , 2N6292 High Current Gain - Bandwidth Product fT = 4.0 MHz (Min) @ IC = 500 mAdc - 2N6288, 90, 92 = 10 MHz (Min) @ IC = 500 mAdc - 2N6107 , 09, 11 TO-220AB Compact , Vdc 30 50 70 2N6111, 2N6288 2N6109 2N6107 , 2N6292 Collector-Base Voltage VCB 2N6111


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PDF 2N6107, 2N6109, 2N6111; 2N6288, 2N6292 2N6109 2N6292 2N6111, 2N6288 2N6292G equivalents transistor 2n6109 2N6107 pnp power 300 watts amplifier circuit diagram 2N6111/2n6288 2N6109G 2N6107G
1995 - 2N6292

Abstract: motorola 2N6109 transistor 2n6107 MOTOROLA 2N6111 2N6107 2N6059 2N6057 2N6050 1N5825 2N6288
Text: MOTOROLA Order this document by 2N6107 /D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 (See 2N6050) Complementary Silicon Plastic Power Transistors PNP 2N6107 2N6109* . . . , ) = 50 Vdc (Min) - 2N6109 VCEO(sus) = 70 Vdc (Min) - 2N6107 , 2N6292 · High Current Gain - , - 2N6107 , 09, 11 · TO­220AB Compact Package 2N6111 NPN 2N6288 * 2N6292 , 2N6107 2N6292 Unit 50 70 Vdc 40 VCEO VCB Collector­Base Voltage 2N6109 30


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PDF 2N6107/D 2N6057 2N6059 2N6050) 2N6107 2N6109* 2N6111, 2N6288 2N6292 motorola 2N6109 transistor 2n6107 MOTOROLA 2N6111 2N6107 2N6059 2N6050 1N5825 2N6288
2001 - 2N6288

Abstract: 2N6111 2N6109 1N5825 2N6107 2N6292 MSD6100
Text: ON Semiconductort PNP Complementary Silicon Plastic Power Transistors 2N6107 . . . , (sus) = 30 Vdc (Min) - 2N6111, 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107 , 2N6292 , (Min) @ IC = 500 mAdc - 2N6107 , 09, 11 TO­220AB Compact Package 2N6292* *ON Semiconductor , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS Symbol 2N6111 2N6288 2N6109 2N6107 2N6292 Unit VCEO 30 , Order Number: 2N6107 /D 2N6107 2N6109 2N6111 2N6288 2N6292 PD, POWER DISSIPATION (WATTS) 40


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PDF 2N6107 2N6111 2N6109 2N6288 2N6111, 2N6107, 2N6288 2N6111 2N6109 1N5825 2N6107 2N6292 MSD6100
2013 - 2N6109

Abstract: 2n6107 2N6111 2n6292 2N-6107
Text: 2N6107 2N6109 2N6111 2N6288 2N6290 2N6292 PNP NPN w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6107 , 2N6288 series types , Storage Junction Temperature Thermal Resistance 2N6111 2N6109 2N6107 SYMBOL 2N6288 2N6290 2N6292 VCBO 40 , =20V (2N6111, 2N6288) ICEO VCE=40V (2N6109, 2N6290) ICEO VCE=60V ( 2N6107 , 2N6292) IEBO VEB=5.0V BVCEO IC=100mA (2N6111, 2N6288) 30 BVCEO IC=100mA (2N6109, 2N6290) 50 BVCEO IC=100mA ( 2N6107 , 2N6292) 70 VCE(SAT) VBE(ON


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PDF 2N6107 2N6109 2N6111 2N6288 2N6290 2N6292 2N6107, O-220 2n6292 2N-6107
CDIL 2N6292

Abstract: CDIL 2N6107 2N6107 2N6292
Text: email@cdil.com www.cdilsemi.com 2N6107_6292Rev_2 151102E Continental Device India Limited Data Sheet , TRANSISTORS 2N6107 PNP 2N6292 NPN TO-220 Plastic Package General Purpose Amplifier and Switching , Continental Device India Limited Data Sheet Page 1 of 4 PLASTIC POWER TRANSISTORS 2N6107 PNP , =0, VCB=10V, f =1 MHz I C=500mA,VCE=4V 2N6107 2N6292 Data Sheet MIN 20 MAX UNIT 250 10 4 TYP pF MHz MHz Page 2 of 4 2N6107 PNP 2N6292 NPN TO-220 Plastic Package TO


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PDF ISO/TS16949 2N6107 2N6292 O-220 C-120 6292Rev 151102E CDIL 2N6292 CDIL 2N6107
1997 - 2N6111

Abstract: 2N6107
Text: 2N6107 2N6111 SILICON PNP SWITCHING TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES PNP , -220 DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNP silicon transistors in Jedec TO-220 plastic , . INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N6107 V , devices voltage and current values are negative June 1997 1/4 2N6107 /2N6111 THERMAL DATA R , 0) mA mA V CE = 70 V V CE = 30 V 2 2 mA mA V CE = 60 V V CE = 20 V for 2N6107


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PDF 2N6107 2N6111 O-220 2N6107 2N6111 O-220
2002 - 2n6111

Abstract: 2N6107 2n6292 transistor 2N6292 2N6111 pin 2N6109
Text: in general-purpose amplifier and switching applications. 2N6107 2N6109 * 2N6111 NPN · DC , , 2N6288 = 50 Vdc (Min) - 2N6109 = 70 Vdc (Min) - 2N6107 , 2N6292 High Current Gain - Bandwidth Product fT = 4.0 MHz (Min) @ IC = 500 mAdc - 2N6288, 90, 92 = 10 MHz (Min) @ IC = 500 mAdc - 2N6107 , 09, 11 , ÎÎÎ *MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB PD 2N6111 2N6288 30 40 2N6109 50 60 2N6107 , April, 2002 - Rev. 5 Publication Order Number: 2N6107 /D 2N6107 2N6109 2N6111 2N6288 2N6292 40 PD


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PDF 2N6107 2N6109 2N6111 2N6111, 2N6288 2N6107, 2N6292 2n6111 2n6292 transistor 2N6111 pin 2N6109
2N8111

Abstract: 2N6107 2N811 2N6109
Text: Vdc (Min) - 2N6107 ,2N6292 High Current Gain - Bandwidth Product f j = 4.0 MHz (Min) @ lc = 500 mAdc - 2N6288,90, 92 = 10 MHz (Min) @ lc = 500 mAdc - 2N6107.09.11 T0-220AB Compact Package · · 2N6107 2N6109* 2N6111 NPN 2N6288 2N6292* "Motorola Prtferrtd D«vlc« PNP · 'MAXIMUM RATINGS , 5 t o + 150 2N6107 2N6292 70 80 Unit Vdc Vdc Vdc Adc Adc Watts W /°C 7 AMPERE POWER TRANSISTORS , Motorola Bipolar Power Transistor Device Data 3-101 2N6107 2N6109 2N6111 2N6288 2N6292 ' ELECTRICAL


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PDF 2N6111, 2N6288 2N6109 2N6107 2N6292 2N6288 T0-220AB 2N8111 2N811 2N6109
2N6476 JAN

Abstract: 2N6180 40817 2N6488 2N6472 TO220I 2N6292 2N6248 2N6107 2N5781
Text: 2N6107 [P-N-P] mily Designation 2N6472 [N-P-N] 2N6248 [P-N-P] 2N6488 [N-P-N] 2N6491 [P-N-P] 2N5783 , min. 2N6292 2N6293 VcerIsusi -8ov hFE - 30-150 @2A f j - 4 MHz min. 2N6106 2N6107 VCERISUSI -80 V hFE , 2N6106 2N6107 VCER(SUS] -S0V lc « -1.5 A VERSAWATT (TO-220) File No.676 2N5786 VCERISUSI -45 V lc , .677 2N5295 2N5296 VCER1SUSI = 50 V lc = 2 A VERSAWATT (TO-220) 322 2N6106 2N6107 VCER(SUS) -80V I c = —2 A VERSAWATT (TO-2201 676 2N5297 2N5298 VCER(SUSI -70 V lc = 2.5 A VERSAWATT (TO-2201 322 2N6106 2N6107 VCER


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PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 2N6476 JAN 2N6180 40817 2N6488 2N6472 TO220I 2N6292 2N6248 2N6107 2N5781
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