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Infineon Technologies AG
SGD02N60BUMA1 Trans IGBT Chip N-CH 600V 6A 3-Pin TO-252 T/R (Alt: SP000011993)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet SGD02N60BUMA1 Tape and Reel 2,500 52 Weeks, 2 Days 2,500 - - - - €0.5409 More Info
New Advantage Corporation SGD02N60BUMA1 2,500 2,500 - - - - $0.7979 More Info
IXYS Corporation
IXGH72N60B3 IGBT, SINGLE, N-CH, 600V, 75A, TO-247AD; DC Collector Current:75A; Collector Emitter Saturation Voltage Vce(on):1.51V; Power Dissipation Pd:540W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AD; No. of RoHS Compliant: Yes
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 IXGH72N60B3 Bulk 36 1 $5.63 $5.07 $4.01 $3.26 $3.26 More Info
RS Components (2) IXGH72N60B3 Tube 157 10 - £4.09 £4.09 £4.09 £4.09 More Info
IXGH72N60B3 Bulk 63 1 £5.16 £4.09 £4.09 £4.09 £4.09 More Info
element14 Asia-Pacific IXGH72N60B3 36 1 $8.19 $7.65 $6.77 $5.77 $5.77 More Info
Farnell element14 IXGH72N60B3 43 1 £6.31 £4.28 £4.22 £3 £3 More Info
SMC Corporation of America
MGPM32N-60B-XC8 CYL; GUIDE; SLIDE; ADJ STK/EXT
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Allied Electronics & Automation MGPM32N-60B-XC8 Bulk 0 1 $408.343 $408.343 $408.343 $408.343 $408.343 More Info
Fairchild Semiconductor Corporation
SSP2N60B Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics SSP2N60B 374,000 1 $0.19 $0.19 $0.17 $0.16 $0.16 More Info
Fairchild Semiconductor Corporation
SSR2N60B Power Field-Effect Transistor, 1.8A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics SSR2N60B 5,000 1 $0.44 $0.44 $0.39 $0.36 $0.36 More Info
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Fairchild Semiconductor Corporation
SSR2N60BTF Power Field-Effect Transistor, 1.8A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics SSR2N60BTF 196,048 1 $0.21 $0.21 $0.19 $0.17 $0.17 More Info
Fairchild Semiconductor Corporation
SSR2N60BTM Power Field-Effect Transistor, 1.8A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics SSR2N60BTM 726 1 $0.21 $0.21 $0.19 $0.17 $0.17 More Info
Fairchild Semiconductor Corporation
SSS2N60B Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics SSS2N60B 3,094 1 $0.21 $0.21 $0.19 $0.17 $0.17 More Info
Fairchild Semiconductor Corporation
SSU2N60BTU Power Field-Effect Transistor, 1.8A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics SSU2N60BTU 2,869 1 $0.36 $0.36 $0.32 $0.29 $0.29 More Info
Fairchild Semiconductor Corporation
SSW2N60BTM Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics SSW2N60BTM 4,632 1 $0.52 $0.52 $0.46 $0.42 $0.42 More Info
Harris Semiconductor
HGT1S12N60B3 Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics HGT1S12N60B3 917 1 $1.54 $1.54 $1.37 $1.25 $1.25 More Info
Harris Semiconductor
HGT1S12N60B3D Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-262AA
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics HGT1S12N60B3D 400 1 $1.54 $1.54 $1.37 $1.25 $1.25 More Info
Harris Semiconductor
HGT1S12N60B3DS Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics HGT1S12N60B3DS 1,100 1 $1.57 $1.57 $1.4 $1.28 $1.28 More Info
Harris Semiconductor
HGT1S12N60B3S Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics HGT1S12N60B3S 1,600 1 $1.57 $1.57 $1.4 $1.28 $1.28 More Info
Harris Semiconductor
HGTG12N60B3D Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-247
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics HGTG12N60B3D 1 1 $2.49 $2.49 $2.22 $2.03 $2.03 More Info
Fairchild Semiconductor Corporation
HGTP12N60B3 INSTOCK
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Chip One Exchange HGTP12N60B3 563 - - - - - More Info

2N60B datasheet (7)

Part Manufacturer Description Type PDF
2N60B Fairchild Semiconductor 600V N-Channel MOSFET Original PDF
2N60B Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N60B Others Shortform Transistor Datasheet Guide Scan PDF
2N60B Others Transistor Shortform Datasheet & Cross References Scan PDF
2N60B Others Vintage Transistor Datasheets Scan PDF
2N60B Others GE Transistor Specifications Scan PDF
2N60B Others Shortform Transistor PDF Datasheet Scan PDF

2N60B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - 2n60b

Abstract: 2N60A
Text: °C 4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 2N60-A 2N60-B THERMAL DATA , Voltage SYMBOL 2N60-A 2N60-B Drain-Source Leakage Current Gate-Source Leakage Current BVDSS


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PDF O-220 O-220F O-220F1 QW-R502-053 2n60b 2N60A
2008 - 2n60

Abstract: 2n60b 2N60A UTC2N60 2n60 MOSFEt DC 2N60 mosfet 2n60 CHARACTERISTICS DIODE 2n60 2N60 UTC 2N60 TO-252
Text: ) PARAMETER SYMBOL 2N60-A 2N60-B Power MOSFET RATINGS UNIT 600 V Drain-Source Voltage VDSS 650 V , specified) SYMBOL 2N60-A 2N60-B Forward Reverse BVDSS IDSS IGSS TEST CONDITIONS VGS = 0V, ID = 250A VDS =


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PDF 2N60L 2N60G QW-R502-053 2n60 2n60b 2N60A UTC2N60 2n60 MOSFEt DC 2N60 mosfet 2n60 CHARACTERISTICS DIODE 2n60 2N60 UTC 2N60 TO-252
2010 - 2N60B

Abstract: 2N60A 2N60 power mosfet 2N60 TO-251 UTC 2n60 2n60 MOSFEt 2N60G utc 2n60l 2N60L equivalent 2n60 equivalent
Text: . ISD2.4A, di/dt200A/s, VDD BVDSS, Starting TJ = 25°C 2N60-A 2N60-B THERMAL DATA PARAMETER , ) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL 2N60-A 2N60-B Drain-Source


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PDF O-220 O-220F O-220F1 QW-R502-053 2N60B 2N60A 2N60 power mosfet 2N60 TO-251 UTC 2n60 2n60 MOSFEt 2N60G utc 2n60l 2N60L equivalent 2n60 equivalent
2009 - 2n60 MOSFEt

Abstract: 2n60 2n60 equivalent 2N60 power mosfet 2N60A CHARACTERISTICS DIODE 2n60 2N60B 2n60l UTC 2N60L 2N60L equivalent
Text: 200A/s, VDD BVDSS, Starting TJ = 25°C 2N60-A 2N60-B THERMAL DATA PARAMETER PACKAGE TO , CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL 2N60-A 2N60-B Forward Reverse Breakdown Voltage


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PDF O-220 O-251 O-220F O-220F1 O-252 QW-R502-053 2n60 MOSFEt 2n60 2n60 equivalent 2N60 power mosfet 2N60A CHARACTERISTICS DIODE 2n60 2N60B 2n60l UTC 2N60L 2N60L equivalent
2007 - Not Available

Abstract: No abstract text available
Text: ratings are stress ratings only and functional device operation is not implied. 2N60-A 2N60-B THERMAL , specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL 2N60-A 2N60-B


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PDF QW-R502-053
2005 - Not Available

Abstract: No abstract text available
Text: , Starting TJ = 25°C 2N60-A 2N60-B ELECTRICAL CHARACTERISTICS (TJ =25℃, unless Otherwise specified.) PARAMETER Off Characteristics Drain-Source Breakdown Voltage SYMBOL 2N60-A 2N60-B Zero Gate


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PDF QW-R502-053
2015 - 8N65

Abstract: No abstract text available
Text: -B 1N60A-B 2N60-B 2N60L-B 3N60-B 4N60-B 5N60-B 6N60-B 7N60-B 8N60-B 10N60-B 12N60-B 新品å


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PDF IC-PPCN-110605 Jun-29-2011 QR-0205-02 8N65
2005 - Not Available

Abstract: No abstract text available
Text: , Starting TJ = 25°C 2N60-A 2N60-B ELECTRICAL CHARACTERISTICS (TJ =25℃, unless Otherwise specified.) PARAMETER Off Characteristics Drain-Source Breakdown Voltage SYMBOL 2N60-A 2N60-B Zero Gate


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PDF O-220 QW-R502-053
2005 - 2N60B

Abstract: No abstract text available
Text: , Starting TJ = 25°C 2N60-A 2N60-B ELECTRICAL CHARACTERISTICS (TJ =25℃, unless Otherwise specified.) PARAMETER Off Characteristics Drain-Source Breakdown Voltage SYMBOL 2N60-A 2N60-B Zero Gate


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PDF O-220 QW-R502-053 2N60B
2007 - ld7535

Abstract: 08SP005 2N60B UC3842 design with TL431 LD7535AB uu9.8
Text: % D2 PS102R R53 2.49KΩ, 0805, 1% D4 1N4007 R54 220Ω, 0805 Q1 2N60B R55 , D4 1N4007 R56A 1KΩ, 1206 Q1 2N60B R56B N/A CR51 SB540 NTC1 5Ω, 3A


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PDF LD7535/LD7535A LD7535/LD7535A OT-26. LD7535 LD7535A-DS-01c LD7535A 08SP005 2N60B UC3842 design with TL431 LD7535AB uu9.8
2007 - LD7530

Abstract: No abstract text available
Text: Q1 2N60B R56B N/A CR51 SB540 NTC1 08SP005 ZD51 6V2C FL1 20mH IC1 , 1N4148 R56B N/A D4 1N4007 NTC1 5Ω, 3A 08SP005 Q1 2N60B FL1 20mH UU9


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PDF LD7530/LD7530A LD7530/LD7530A OT-26 LD7530/7530A LD7530 LD7530A-DS-04 350nS 200nS)
2008 - LD7535

Abstract: uc3842 hiccup
Text: PS102R R53 2.49KΩ, 0805, 1% D4 1N4007 R54 220Ω, 0805 Q1 2N60B R55 10KΠ, 1N4148 R55 10KΩ, 0805 D4 1N4007 R56A 1KΩ, 1206 Q1 2N60B R56B N/A CR51


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PDF LD7535B LD7535B OT-26. LD7535B-DS-01a OT-26) LD7535 uc3842 hiccup
2N277

Abstract: N1702 L204A 2SA63 2N390A 2N7582 OC59 TFK D 327 2N374 SFT243
Text: ,2N59A,2N59B»2N59C,2N60A, 2N60B.2N60C.2N61A 2N413.2N416.2N417.2N425,2N426.2N427.2N428 , ETC.WES 2N60B P58 ETC.WES 2N60C 2N61 P58 ETC.WES P58 ETC.WES 2N61A P58 2N61B P58 ETC .WES 2N61C , 5 9 A .2 N 5 9 B . 2 N 5 9 C . 2 N 6 0 A , 2N60B .2N60C.2N61A 2N34»2N3e,2N45,2Nl04,2N105.2N109,2Nin , » 2 n 59C,2N 60A, 2N60B ,2N60C, 2N61A ,2N618,2N61C 2N 45 ,2 N 59 A, 2 N5 98 ,2 N59 C,2N 60 A, 2N 60 B , 2 N 5 9 . 2 N 5 9A . 2N 59 B .2 N60 .2 N60 A. 2N60B.2N61 , 2N 61A .2N 61B .2 N27 0 2 N 5 9 . 2 N 5 9A


OCR Scan
PDF 2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A 2N277 N1702 L204A 2SA63 2N390A 2N7582 OC59 TFK D 327 2N374 SFT243
2008 - LD7552D

Abstract: LD7552D-DS-00 LD7552DPS UU9.8
Text: R56A 510Ω, 1206 Q1 2N60B R56B N/A CR51 SB540 NTC1 08SP005 ZD51 6V2C , 2N60B FL1 20mH UU9.8 CR51 SB540 T1 EI-22 ZD51 6V2C L51 2.7μH IC1


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PDF LD7552D LD7552D LD7552D-DS-00 LD7552DPS UU9.8
2010 - Newmarket Transistors

Abstract: sgs-ates transistors 2G108 2AC128-01 2N174 RCA 2BD124 2N109 2G271 2N123 2G381
Text: 2N59C PPC Product 2N60 PPC Product 2N60A PPC Product 2N60B PPC Product 2N60C PPC Product 2N61 PPC


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PDF ST3042 ST3043 3N120 3N121 2N332 2N333 2N335 2N336 2N334 2SCl16 Newmarket Transistors sgs-ates transistors 2G108 2AC128-01 2N174 RCA 2BD124 2N109 2G271 2N123 2G381
2007 - LD7550BBN

Abstract: ld7550 LD7550BBL marking r4a
Text: % D2 PS102R R54 220Ω, 0805 D4 1N4007 R55 10KΩ, 0805 Q1 2N60B R56A


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PDF LD7550-B LD7550-B OT-26 LD7550-B-DS-01a LD7550BBN ld7550 LD7550BBL marking r4a
2009 - SCR TL431 Specification

Abstract: LD7578GS
Text: 1N4007 R55 1KΩ, 0805 Q1 2N60B R56A 2.7KΩ, 1206 CR51 SB540 R56B N/A


Original
PDF LD7578 LD7578 500mA LD7578-DS-00 SCR TL431 Specification LD7578GS
LD7575PS

Abstract: 08SP005 ld7575ds LD7575 2n60b ld7575 ps 08sp LD7575CS 1N4007 1206 ltec capacitor
Text: R56A 2.7K, 1206 D4 1N4007 R56B N/A Q1 2N60B NTC1 5, 3A 08SP005 CR51


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PDF LD7575 LD7575 LD7575-DS-01-PROMATE 264Vac" LD7575PS 08SP005 ld7575ds 2n60b ld7575 ps 08sp LD7575CS 1N4007 1206 ltec capacitor
2007 - ld7575 equivalent

Abstract: ld7575ps LD7575PN LD7575 ld7575ds
Text: 1N4007 R55 1KΩ, 0805 Q1 2N60B R56A 2.7KΩ, 1206 CR51 SB540 R56B N/A


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PDF LD7575 LD7575 500mA 300mA 200nS 160nS. 100nS LD7575-DS-04b ld7575 equivalent ld7575ps LD7575PN ld7575ds
2008 - LD7575APS

Abstract: No abstract text available
Text: 100Ω, 0805 D4 1N4007 R55 1KΩ, 0805 Q1 2N60B R56A 2.7KΩ, 1206 CR51


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PDF LD7575A LD7575A the070 LD7575A-DS-00a LD7575APS
2008 - LD7531

Abstract: sot-23 r4b
Text: 08SP005 Q1 2N60B FL1 20mH UU9.8 CR51 SB540 T1 EI-22 ZD51 6V2C L51


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PDF LD7531 LD7531 OT-26/ LD7531-DS-00 sot-23 r4b
2009 - ZD51

Abstract: No abstract text available
Text: D3 1N4148 R56B N/A D4 1N4007 NTC1 5Ω, 3A 08SP005 Q1 2N60B FL1


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PDF LD7551C LD7551C OT-26 LD7551C-DS-00 ZD51
LD7575PS

Abstract: ld7575 equivalent EL817B equivalent 2N60B LD7575 LD7575PN 08SP005 data sheet ld7575 ps ld7575s SCR TL431 Specification
Text: PS102R R54 100, 0805 D4 1N4007 R55 1K, 0805 Q1 2N60B R56A 2.7K, 1206


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PDF LD7575 LD7575 500mA 300mA 200nS 160nS. 100nS LD7575-DS-04a LD7575PS ld7575 equivalent EL817B equivalent 2N60B LD7575PN 08SP005 data sheet ld7575 ps ld7575s SCR TL431 Specification
2009 - Not Available

Abstract: No abstract text available
Text: 1N4007 R55 1KΩ, 0805 Q1 2N60B R56A 2.7KΩ, 1206 CR51 SB540 R56B N/A


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PDF LD7578J LD7578J LD7578J-DS-00
2008 - LD7575BGS

Abstract: ld7575
Text: PS102R R54 100Ω, 0805 D4 1N4007 R55 1KΩ, 0805 Q1 2N60B R56A 2.7KΩ, 1206


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PDF LD7575B LD7575B LD7575B-DS-00 LD7575BGS ld7575
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