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2N6059 equivalent Datasheets Context Search

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2013 - Not Available

Abstract: No abstract text available
Text: 2N6058 and 2N6059 Available on commercial versions NPN Darlington Power Silicon Transistor , 2N6058 and 2N6059 • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/502 , Dissipation 2N6058 2N6059 2N6058 2N6059 o @ T C = +25 C o @ T C = +100 C (1) Value T J , Corporation Page 1 of 8 2N6058 and 2N6059 MECHANICAL and PACKAGING • • • • • â , 2N6059 o ELECTRICAL CHARACTERISTICS @ T A = +25 C unless otherwise noted Characteristics 2N6058


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PDF 2N6058 2N6059 MIL-PRF-19500/502 O-204AA O-204AA T4-LDS-0307,
2n6059 equivalent

Abstract: 2N6059 JANTX equivalent 2N6058 2N6059 C-2688
Text: TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6058 AND 2N6059 , JAN, JANTX, AND JANTXV This specification is , +25°C unless otherwise specified. 2N6058 2N6059 PT (1) TC = +25°C PT TC = +100°C VCBO , with ASME Y14.5M, diameters are equivalent to symbology. FIGURE 1. Physical dimensions and , 2071 Subgroup 2 * 3131 See 4.3.2 Breakdown voltage, collector to emitter 2N6058 2N6059 , cutoff current 2N6058 2N6059 3041 Collector to emitter cutoff current 2N6058 2N6059 3041


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PDF MIL-PRF-19500/502E MIL-PRF-19500/502D 2N6058 2N6059, MIL-PRF-19500. 2n6059 equivalent 2N6059 JANTX equivalent 2N6059 C-2688
1995 - 100 amp npn darlington power transistors

Abstract: 10 amp npn darlington power transistors 2N6050 2N6057 MOTOROLA 2N6059 MOTOROLA 1N5825 2N6051 2n6051 motorola 2N6057 2N6058
Text: 2N6052* NPN 2N6057 thru * 2N6059 Darlington Complementary Silicon Power Transistors . . . , 2N6052, 2N6059 · Monolithic Construction with Built­In Base­Emitter Shunt Resistors , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (1) Symbol 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 Unit , 100 mA ts 2N6050/2N6052 2N6057/ 2N6059 5.0 10 V ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î , /2N6052 2N6057/ 2N6059 Magnitude of Common Emitter Small­Signal Short Circuit Forward Current Transfer


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PDF 2N6050/D 2N6050 2N6052* 2N6057 2N6059 2N6050, 2N6051, 2N6058 2N6052, 100 amp npn darlington power transistors 10 amp npn darlington power transistors 2N6050 2N6057 MOTOROLA 2N6059 MOTOROLA 1N5825 2N6051 2n6051 motorola 2N6057 2N6058
2004 - 2N6052

Abstract: 2N6059 2N6051 2N6058 npn darlington transistor 150 watts
Text: 2N6051/2N6052/2N6058/ 2N6059 Darlington Complementary Transistors Features: · Designed for , J 3.88 10.67 NPN 2N6058 2N6059 Darlington 12 Ampere Complementary Silicon Power , : Millimetres TO-3 Maximum Ratings Characteristic 2N6051 2N6052 2N6058 2N6059 80 Symbol , 1 21/04/04 V1.0 2N6051/2N6052/2N6058/ 2N6059 Darlington Complementary Transistors PD , Collector-Emitter Sustaining Voltage (1) (IC = 100mA, IB = 0) 2N6051, 2N6058 2N6052, 2N6059 VCEO(sus) 80


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PDF 2N6051/2N6052/2N6058/2N6059 2N6058 2N6059 2N6051 2N6052 2N6052 2N6059 2N6051 2N6058 npn darlington transistor 150 watts
1995 - 2N6050

Abstract: 2N6057 2N6052 2N6051 2N6059 2N6058
Text: 2N6050, 2N6052, 2N6057 AND 2N6059 ARE SGS-THOMSON PREFERRED SALESTYPES HIGH GAIN HIGH CURRENT HIGH , 2N6059 respectively. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 K R2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Unit NPN 2N6057 2N6058 2N6059 , and current values are negative. October 1995 1/4 2N6050/2N6051/2N6052/2N6057/2N6058/ 2N6059 , Cut-off Current (I B = 0) for 2N6050/2N6057 for 2N6051/2N6058 for 2N6052/ 2N6059 I EBO Emitter


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PDF 2N6050/51/52 2N6057/58/59 2N6050, 2N6052, 2N6057 2N6059 2N6051 2N6052 2N6057, 2N6050 2N6058
1998 - 1N5825

Abstract: 2N6052 2N6058 2N6059 MSD6100 2N6058 MOTOROLA
Text: * Darlington Complementary Silicon Power Transistors NPN 2N6058 * 2N6059 . . . designed for , VCEO(sus) = 100 Vdc (Min) - 2N6052, 2N6059 · Monolithic Construction with Built­In Base­Emitter Shunt , RATINGS (1) Symbol 2N6058 2N6052 2N6059 Unit VCEO 80 100 Vdc Collector­Base , ) VCEO(sus) 2N6058 2N6052, 2N6059 Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) Vdc ICEO mAdc 2N6058 2N6052, 2N6059 Collector Cutoff Current (VCE = Rated


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PDF 2N6052/D 2N6052* 2N6058 2N6059 2N6052, 1N5825 2N6052 2N6058 2N6059 MSD6100 2N6058 MOTOROLA
2006 - 1N5825

Abstract: 2N6052 2N6058 2N6059 MSD6100 3 pin transistor 10 amp
Text: 2N6059 * · High DC Current Gain - · · w hFE = 3500 (Typ) @ IC = 5.0 Adc Collector-Emitter Sustaining Voltage - @ 100 mA VCEO(sus) = 80 Vdc (Min) - 2N6058 100 Vdc (Min) - 2N6052, 2N6059 , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (1) Symbol 2N6058 2N6052 2N6059 Unit VCEO , ) (IC = 100 mAdc, IB = 0) 2N6058 2N6052, 2N6059 Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) 2N6058 2N6052, 2N6059 VCEO(sus) Vdc ICEO Collector Cutoff


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PDF 2N6052* 2N6058 2N6059* 2N6052, 2N6059 2N6052/D 1N5825 2N6052 2N6058 2N6059 MSD6100 3 pin transistor 10 amp
2001 - 1N5825

Abstract: 2N6052 2N6058 2N6059 MSD6100
Text: 2N6059 * · High DC Current Gain - · · hFE = 3500 (Typ) @ IC = 5.0 Adc Collector­Emitter Sustaining Voltage - @ 100 mA VCEO(sus) = 80 Vdc (Min) - 2N6058 100 Vdc (Min) - 2N6052, 2N6059 , POWER TRANSISTORS 80­100 VOLTS 150 WATTS MAXIMUM RATINGS (1) Symbol 2N6058 2N6052 2N6059 , Collector­Emitter Sustaining Voltage (2) (IC = 100 mAdc, IB = 0) VCEO(sus) 2N6058 2N6052, 2N6059 , 2N6052, 2N6059 Collector Cutoff Current (VCE = Rated VCEO, VBE(off) = 1.5 Vdc) (VCE = Rated VCEO


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PDF 2N6052* 2N6058 2N6059* 2N6052, 2N6059 r14525 2N6052/D 1N5825 2N6052 2N6058 2N6059 MSD6100
2003 - 2N6059

Abstract: No abstract text available
Text: ® 2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR s s s s s s ) s ( t c u d o ) r s ( P , SWITCHING INDUSTRIAL EQUIPMENT 2 TO-3 DESCRIPTION The 2N6059 is a silicon Epitaxial-Base NPN , 200 200 C C February 2003 1/4 2N6059 THERMAL DATA R thj-case Thermal Resistance , 2/4 2N6059 TO-3 MECHANICAL DATA mm MIN. A B C D E 11.00 0.97 1.50 8.32 TYP. MAX. 13.10 1.15 , 1.547 1.193 P A D G C U V O N R B P003F 3/4 E 2N6059 ) s


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PDF 2N6059 2N6059
2003 - UC 2003

Abstract: 2N6059
Text: 2N6059 ® SILICON NPN POWER DARLINGTON TRANSISTOR s s s s s s STMicrolectronics , 2N6059 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in , 2003 -65 to 200 o C 200 o C 1/4 2N6059 THERMAL DATA R thj-case Thermal , so Ob - 4 V V V V MHz 2N6059 TO-3 MECHANICAL DATA mm DIM. MIN. inch , let o R P003F 3/4 2N6059 uc d te le (s) ct s) t( ro P so Ob -


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PDF 2N6059 2N6059 UC 2003
2N6059 MOTOROLA

Abstract: 2N6058 MOTOROLA
Text: - @ 100 mA V cE O (su s) = 80 Vdc (Min) - 2N6058 100 Vdc (Min) - 2N6052, 2N6059 · Monolithic Construction with Built-In Base-Emitter Shunt Resistors 2N6052* NPN PNP 2N6058 2N6059 * "Motorola , 5.0 12 20 0.2 150 0.857 Tj, Tgtg -6 5 to +200°C 2N6052 2N6059 100 100 Unit Vdc Vdc Vdc Adc Adc Watts W , = 300 us, Duty Cycle = 2.0%. 2N6052 2N6058/ 2N6059 Ihfel 4.0 MHz hFE 750 100 v CE(sat) - - v BE(sat) v BE(on) - - 2.0 3.0 4.0 2.8 Vdc Vdc 1 18,000 - Vdc v CEO(sus) 2N6058 2N6052, 2N6059 *CEO 2N6058


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PDF 2N6052/D 2N6058 2N6052, 2N6059 2N6052* 2N6059* Box5405, 2N6059 MOTOROLA 2N6058 MOTOROLA
Not Available

Abstract: No abstract text available
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 • High Current Capability. • Hermetic TO3 Metal package. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage Collector , Document Number 8812 Issue 1 Page 1 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 ELECTRICAL , 2 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 MECHANICAL DATA Dimensions in mm (inches


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PDF 2N6059 O-204AA)
Not Available

Abstract: No abstract text available
Text: SGS-THOMSON iW 2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR . . . SGS-THOMSON , The 2N6059 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration mounted , 2N6059 THERMAL Rlhj-c DATA T h e rm a l R e s is ta n c e J u n c tio n -c a s e la x 1.1 7 °C /W , cycle 1.5 % 2/4 ^ 7# Koaetämuemroiies / r r sGS-m0MS0N 2N6059 TO-3 MECHA NIC AL DATA , 0.161 1.547 1.193 P003F ^ 7# raociam yieoT O m oes / r r sGS-m0MS0N 3/4 2N6059


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PDF 2N6059 2N6059
1998 - DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement BUH513 MJ2955 replacement
Text: 2N6051 2N6052 2N6053 2N6055 2N6057 2N6058 2N6059 2N6098 2N6099 2N6100 2N6101 2N6102 2N6103 , 2N6059 2N6059 2N6059 2N6487 2N6487 2N6487 2N6488 2N6488 2N6487 Industry standard 2N6106 , BUY69A BUY69A 2N5884 2N5884 2N5884 BUX10 BUX10 BUX10 2N6059 2N6059 2N6059 2N6059 2N5886 , 2N6547 MJE3440 ST13007 MJE3055T 2N6547 BUV21 2N3055 BDW51C MJ11016 2N6059 2N6059 BUV50 BUV50 , BUH1215 BUH1215 BUL128 BUL138 BUL138 BUL57 BUL128 BUL57 BUH615D BUH1215 BUL216 2N6059 2N6059


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement BUH513 MJ2955 replacement
1997 - transistor B 892

Abstract: 2N6059 transistor 892
Text: 2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR s s s s s s SGS-THOMSON PREFERRED , The 2N6059 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration mounted , 1997 1/4 2N6059 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o , 2N6059 TO-3 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A , 2N6059 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON


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PDF 2N6059 2N6059 transistor B 892 transistor 892
1997 - 2N6059

Abstract: No abstract text available
Text: 2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR s s s s s s SGS-THOMSON PREFERRED , The 2N6059 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration mounted , 1997 1/4 2N6059 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max o , 2N6059 TO-3 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A , 2N6059 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON


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PDF 2N6059 2N6059
2003 - 2N6059

Abstract: 2n6059 03 transistor 1547 b
Text: 2N6059 ® SILICON NPN POWER DARLINGTON TRANSISTOR s s s s s s STMicrolectronics , 2N6059 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in , 2003 -65 to 200 o C 200 o C 1/4 2N6059 THERMAL DATA R thj-case Thermal , 3 V 750 100 f =1 MHz 4 MHz 2N6059 TO-3 MECHANICAL DATA mm DIM. MIN. inch , V E G U D R P003F 3/4 2N6059 Information furnished is believed to be


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PDF 2N6059 2N6059 2n6059 03 transistor 1547 b
2010 - Not Available

Abstract: No abstract text available
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 · · · High Current Capability. Hermetic TO3 Metal package. Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector ­ Base Voltage Collector ­ Emitter Voltage Emitter ­ Base , TRANSISTOR 2N6059 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols ICEO ICEX IEBO V , 8812 Issue 1 Page 2 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 MECHANICAL DATA Dimensions


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PDF 2N6059 O-204AA)
1997 - DK53

Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Text: 2N6058 2N6059 2N6098 2N6099 2N6100 2N6101 2N6102 2N6103 2N6106 2N6107 2N6108 2N6109 2N6110 , REPLACEMENT ST NEAREST PREFERRED 2N6059 2N6059 2N6059 2N6487 2N6487 2N6487 2N6488 2N6488 2N6487 , BUY69A 2N5884 2N5884 2N5884 BUX10 BUX10 BUX10 2N6059 2N6059 2N6059 2N6059 2N5886 2N3055 , 2N6059 2N6059 BUV50 BUV50 BUV50 BUV50 BUV50 TIP31A ST13003 ST13005 ST13005 ST13005 ST13007 , BUL128 BUL138 BUL138 BUL57 BUL128 BUL57 BUH615D BUH1215 BUL216 2N6059 2N6059 BUL138 BUH1215


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
2001 - MJ3001 equivalent

Abstract: 2N3055 equivalent transistor NUMBER BD907 equivalent Motorola transistors MJE3055 TO 127 transistor equivalent book 2sc2238 Drive IC 2SC3346 TRANSISTOR REPLACEMENT GUIDE mje340 equivalent MJE350 equivalent mje521 equivalent
Text: MTP12N10 500 µF 150 Voff *Tektronix AM503 *P6302 or Equivalent Scope - Tektronix 7403 or Equivalent T1 , 500 µF 150 MJE210 1 µF A *IB T.U.T. *IC VCC RL *Tektronix AM503 *P6302 or Equivalent , 2N6057(2) 2N6058(2) 2N6050(2) 2N6051(2) 750/18k 750/18k 750/18k 20/70 20/70 2k/20k 2N6059 (2


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PDF Satur32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 MJ3001 equivalent 2N3055 equivalent transistor NUMBER BD907 equivalent Motorola transistors MJE3055 TO 127 transistor equivalent book 2sc2238 Drive IC 2SC3346 TRANSISTOR REPLACEMENT GUIDE mje340 equivalent MJE350 equivalent mje521 equivalent
B0411

Abstract: B0733 2SC4977 THD200F1 dk52 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
Text: 2N6037 2N6038 2N6Q39 2N6042 2N6045 2N6050 2N6051 2N6052 2N6053 2N6055 2N6057 2N6058 2N6059 2N6098 2N6099 2N6100 2N6101 2N6102 2N6103 2N6106 2N6107 2N6108 2N6109 2N6107 2N6107 2N6107 2N6059 2N6487 2N6487 2N6487 2N6488 2N6488 2N6487 2N6107 2N6050 BDX88C BDX88C 2N6050 MJ3001 2N6059 2N6059 2N6036 2N6039 2N6039 BD681 , BD243B BD243B BUX80 BUY69A BUY69A 2N5884 2N5884 2N5884 BUX10 BUX10 BUX10 2N6059 2N6059 2N6059 2N6059 , 2SC4106 SGS-THOMSON SGS-THOMSON PAGE REPLACEMENT NEARESTPREF0WED 2N3055 BDW51C MJ11016 2N6059 2N6059


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 B0411 B0733 2SC4977 THD200F1 dk52 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
2001 - D45H11 equivalent replacement

Abstract: transistor equivalent book 2SC2073 BU108 bd139 equivalent transistor BUT11Af equivalent BDX36 equivalent 2SA818 equivalent transistor mj11028 equivalent mje521 equivalent transistor BU326
Text: ts and tf 20 100 + Vdc 11 Vdc 2N6191 Vin 11 V *Tektronix *P­6042 or * Equivalent , Volts *Tektronix *P­6042 or * Equivalent Inductive Switching L = 200 µH RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 Scope - Tektronix 7403 or Equivalent RBSOA L = 200 µH RB2 = 0 VCC = 20 Volts RB1 , 2N6057(2) 2N6058(2) 2N6050(2) 2N6051(2) 750/18k 750/18k 750/18k 20/70 20/70 2k/20k 2N6059 (2


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PDF MJE16004 MJE16002 MJH16002 Designe32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A D45H11 equivalent replacement transistor equivalent book 2SC2073 BU108 bd139 equivalent transistor BUT11Af equivalent BDX36 equivalent 2SA818 equivalent transistor mj11028 equivalent mje521 equivalent transistor BU326
2001 - MJ802 EQUIVALENT

Abstract: bd139 equivalent mje521 equivalent TIP41C EQUIVALENT MJE3055T equivalent mje340 equivalent 2sd880 equivalent MJL21193 equivalent equivalent buv18a MJE350 equivalent
Text: V Vin 0V tr +V 0V ­5V TUT *IB *IC v 15 ns *Tektronix P­6042 or equivalent . 50 RL VCC , desired IB1 Scope - Tektronix 7403 or Equivalent RBSOA L = 200 µH RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 R IB2 *Tektronix *P­6042 or * Equivalent Note: Adjust ­ V to obtain desired VBE(off , 2N6057(2) 2N6058(2) 2N6050(2) 2N6051(2) 750/18k 750/18k 750/18k 20/70 20/70 2k/20k 2N6059 (2


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PDF 2N6836 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 MJ802 EQUIVALENT bd139 equivalent mje521 equivalent TIP41C EQUIVALENT MJE3055T equivalent mje340 equivalent 2sd880 equivalent MJL21193 equivalent equivalent buv18a MJE350 equivalent
2001 - 2sd718 amplifier

Abstract: 2SA1046 BU108 2SC160 MJ1000 BU100 TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT 2N6052 equivalent MJD350-1 2SC237
Text: ) - 2N6052, 2N6059 · Monolithic Construction with Built­In Base­Emitter Shunt Resistors MAXIMUM , ÎÎÎ Symbol VCEO VCB VEB IC IB 2N6050 2N6057 60 60 2N6051 2N6058 80 80 2N6052 2N6059 100 100 Unit Vdc , _C 2N6050 thru 2N6052* NPN 2N6057 thru * 2N6059 *Motorola Preferred Device PNP DARLINGTON 12 AMPERE , ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ 2N6050 thru 2N6052 2N6057 thru 2N6059 , ) Vdc 2N6050, 2N6057 2N6051, 2N6058 2N6052, 2N6059 60 80 100 - - - - - - - -


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PDF 2N6050, 2N6057 2N6051, 2N6058 2N6052, 2N6059 TIP73B TIP74 TIP74A TIP74B 2sd718 amplifier 2SA1046 BU108 2SC160 MJ1000 BU100 TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT 2N6052 equivalent MJD350-1 2SC237
2001 - MJ802 EQUIVALENT

Abstract: 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent ST T8 3580 MJ15025* equivalent MJ3055 equivalent BDX37 equivalent mje340 equivalent
Text: AM503 *P6302 or Equivalent Scope - Tektronix 7403 or Equivalent t1 (ICpk) [ Lcoil VCC T1 0V ­V +V , *Tektronix AM503 *P6302 or Equivalent 11 V RL IC IB 250 Vdc 25 10 A 1A IC IB1 IB2 RB1 RB2 RL 250 V 10 A , . The 24 volt rail allows a Tektronix 2445 or equivalent scope to operate at 1 volt per division without , 750/18k 20/70 20/70 2k/20k 2N6059 (2) 2N3055 2N3055A 2N6576 (2) 2N5881 2N6052 (2) MJ2955


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PDF MJ16110* MJW16110* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJ802 EQUIVALENT 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent ST T8 3580 MJ15025* equivalent MJ3055 equivalent BDX37 equivalent mje340 equivalent
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