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2N5883 Solid State Manufacturing Allied Electronics & Automation - $2.65 $2.42
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2N5883 datasheet (41)

Part Manufacturer Description Type PDF
2N5883 Motorola 25A PNP SILICON POWER TRANSISTOR Original PDF
2N5883 On Semiconductor Complementary Silicon High-Power Transistors - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 Original PDF
2N5883 On Semiconductor Bipolar Power TO3 PNP 25A 60V; Package: TO-204 (TO-3); No of Pins: 2; Container: Tray; Qty per Container: 100 Original PDF
2N5883 Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 Original PDF
2N5883 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
2N5883 API Electronics 25 Amp Transistors Scan PDF
2N5883 Boca Semiconductor COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 Scan PDF
2N5883 Central Semiconductor Leaded Power Transistor General Purpose Scan PDF
2N5883 Diode Transistor Transistor Short Form Data Scan PDF
2N5883 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N5883 General Transistor Power Transistor Selection Guide Scan PDF
2N5883 Mospec POWER TRANSISTORS(25A,200W) - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 Scan PDF
2N5883 Mospec Complementary Silicon High-Power Transistor Scan PDF
2N5883 Motorola The European Selection Data Book 1976 Scan PDF
2N5883 Motorola European Master Selection Guide 1986 Scan PDF
2N5883 Motorola 25A Si Power Transistor Scan PDF
2N5883 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2N5883 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N5883 Others Semiconductor Master Cross Reference Guide Scan PDF
2N5883 Others Shortform Transistor Datasheet Guide Scan PDF

2N5883 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - 2N5883

Abstract: 2n5885
Text: and switching applications. 2N5883 2N5884* 2N5885 2N5886* *ON Semiconductor Preferred Device , ) Rating Symbol VCEO VCB VEB IC IB 2N5883 2N5885 60 60 2N5884 2N5886 80 80 Unit Vdc Vdc Vdc Adc Adc , , LLC, 2001 1 January, 2001 ­ Rev. 8 Publication Order Number: 2N5883 /D , 200 mAdc, IB = 0) Symbol Min 60 80 - - - - - - - - Max - - Unit Vdc 2N5883 , 2N5885 2N5884 , = 40 Vdc, IB = 0) 2N5883 , 2N5885 2N5984, 2N5886 2.0 2.0 1.0 1.0 10 10 1.0 1.0 1.0 mAdc mAdc


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PDF 2N5883 2N5884* 2N5885 2N5886* r14525 2N5883/D
2006 - 2N5884

Abstract: 2N5884G 2N5886G 2N5984 2N5885G 2N5883 2N5883G 2N5885 2N5886
Text: Voltages Figure 13. "On" Voltages ORDERING INFORMATION Device 2N5883 2N5883G 2N5884 2N5884G , 2N5883 , 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (Note 1) Rating Symbol Collector-Emitter Voltage 2N5883 , 2N5885 2N5884, 2N5886 VCEO Collector-Base Voltage Value Unit Vdc 60 80 VCB 2N5883 , 2N5885 2N5884 , Order Number: 2N5883 /D 0 0 25 2 http://onsemi.com Figure 1. Power Derating 50 75


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PDF 2N5883, 2N5884 2N5885, 2N5886 2N5884 2N5886 O-204AA 2N5883/D 2N5884G 2N5886G 2N5984 2N5885G 2N5883 2N5883G 2N5885
2002 - Not Available

Abstract: No abstract text available
Text: PNP 2N5883 , 2N5884*, NPN 2N5885, 2N5886* Preferred Device Complementary Silicon High-Power , 10 Adc High Current Gain Bandwidth Product - ft = 4.0 MHz (min) at IC = 1.0 Adc 2N5883 2N5885 60 60 , May, 2002 - Rev. 10 Publication Order Number: 2N5883 /D ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , Vdc 2N5883 , 2N5885 2N5884, 2N5886 VCEO(sus) ICEO ICEX Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) 2N5883 , 2N5885 2N5984, 2N5886 2.0 2.0 1.0 1.0 10 10 mAdc mAdc Collector Cutoff


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PDF 2N5883, 2N5884* 2N5885, 2N5886* 2N5883 2N5885
2N5886G

Abstract: 2N5886 IB 115 2N5885G 2N5884 2N5883 2N5885 2N5884G 2N5883G 2N5984
Text: Voltages ORDERING INFORMATION Device 2N5883 2N5883G 2N5884 2N5884G Package Shipping TO , 2N5883 , 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices , 2N5883 , 2N5885 2N5884, 2N5886 VCEO Collector-Base Voltage Value Unit Vdc 60 80 VCB 2N5883 , 2N5885 2N5884, 2N5886 Emitter-Base Voltage MARKING DIAGRAM Vdc 60 80 VEB 5.0 , = 0, f = 1.0 MHz) 2N5883 , 2N5884 2N5885, 2N5886 Current-Gain - Bandwidth Product (Note 4


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PDF 2N5883, 2N5884 2N5885, 2N5886 2N5884 2N5886 O-204AA O-204AA 2N5886G IB 115 2N5885G 2N5883 2N5885 2N5884G 2N5883G 2N5984
2001 - 2N5984

Abstract: 2N5886 2N5883 2N5884 2N5885
Text: ON Semiconductort PNP Complementary Silicon High-Power Transistors 2N5883 2N5884* . . , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (1) Symbol 2N5883 , Publication Order Number: 2N5883 /D 2N5883 2N5884 2N5885 2N5886 ÎÎÎ Î Î Î Î Î , Voltage (2) (IC = 200 mAdc, IB = 0) Characteristic 2N5883 , 2N5885 2N5884, 2N5886 VCEO(sus , (VCE = 40 Vdc, IB = 0) 2N5883 , 2N5885 2N5984, 2N5886 ICEO - - 2.0 2.0 mAdc


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PDF 2N5883 2N5884* 2N5885 2N5886* r14525 2N5883/D 2N5984 2N5886 2N5883 2N5884 2N5885
2N5886

Abstract: 2N5883 2N5884 2N5885 S200 40 amp collector current CWB-10
Text: , Duty Cycle i? 2.0% (2)V=| hj °ftest 2N5883 ,5884 PNPI 2N5885.2N5886 NPN PNP 2N5883.2N5884 DC , 1.0 2.0 5.0 10 IC , COLLECTOR CURRENT (AMP) 20 30 2N5883.2N5884 PNP12N5885.2N5886 NPN ,  2N5883 , 2N5884 PNP I 2N5885, 2N5886 NPN ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise , (1) (I- = 200 mA, L = 0 ) 2N5883 , 2N5885 2N5884, 2N5886 ^CEO(SUS) 60 80 V Collector Cutoff Current ( VCE = 30 V, lB = 0 ) 2N5883 , 2N5885 ( VCE = 40 V, lB = 0 ) 2N5884, 2N5886 'CEO 2.0 2.0 mA Collector


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PDF 2N5883, 2N5884 2N5885, 2N5886 2N5885 2N5884, 2N5886 2N5885 2N5883 S200 40 amp collector current CWB-10
2006 - 2N5884G

Abstract: No abstract text available
Text: € Voltages ORDERING INFORMATION Device 2N5883 2N5883G 2N5884 2N5884G Package Shipping TOâ , 2N5883 , 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices , Ž MAXIMUM RATINGS (Note 1) Rating Symbol Collector−Emitter Voltage 2N5883 , 2N5885 2N5884, 2N5886 VCEO Collector−Base Voltage Value Unit Vdc 60 80 VCB Vdc 60 80 2N5883 , ˆ’ Rev. 11 1 Publication Order Number: 2N5883 /D 0 0 25 2 http://onsemi.com Figure


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PDF 2N5883, 2N5884 2N5885, 2N5886 2N5884 2N5886 204AA 2N5883/D 2N5884G
1995 - 2N5885

Abstract: 2N5886 2N5884 2N5883 transistor 2N5884 P003N
Text: 2N5883 /2N5885 2N5884/2N5886 COMPLEMENTARY SILICON HIGH POWER TRANSISTORS n 2N5884, 2N5885 , switching applications. The complementary PNP types are 2N5883 and 2N5884 respectively. 1 2 TO , 2N5883 2N5884 NPN 2N5885 2N5886 V CBO Collector-Base Voltage (I E = 0) 60 80 V , For PNP types voltage and current values are negative. October 1995 1/4 2N5883 /2N5884/2N5885 , Collector Cut-off Current (I E = 0) I CEO Collector Cut-off Current (I B = 0) for 2N5883 /2N5885


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PDF 2N5883/2N5885 2N5884/2N5886 2N5884, 2N5885 2N5886 2N5883 2N5884 2N5883 transistor 2N5884 P003N
2N5883

Abstract: 2N5884 2N5885 2N5886
Text: NPN 2N5883 2N5885 2N5884 2 N5886 Characteristic Symbol 2N5883 2N5885 2N5884 2N5886 Unit , 1.62 H 29.90 30.40 1 16.64 17.30 J 3.88 4.36 K 10.67 11.18 2N5883 , 2N5884 PNP I 2N5885, 2N5886 NPN , CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) (I- = 200 mA, L = 0 ) 2N5883 , 2N5885 2N5884, 2N5886 ^ceo(sus) 60 80 V Collector Cutoff Current ( VCE = 30 V, lB = 0 ) 2N5883 , 2N5885 ( VCE = 40 V, lB = 0 ) 2N5884, 2N5886 'ceo 2.0 2.0 mA Collector Cutoff Current (VCE = 60 V, VBS(ofn = 1.5 V ) 2N5883 , 2N5885


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PDF SATr10v 2N5883 2N5885 2N5884 N5886 2N5885 2N5886
2N5886 MOTOROLA

Abstract: 2N5885 MOTOROLA 2N5984 2N5883 2N5883 MOTOROLA 2N5884 2N5885 2N5886 transistor 2N5884
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5883 /D Complementary Silicon , MAXIMUM RATINGS (1) Rating Symbol 2N5883 2N5885 2N5884 2N5886 Unit Collector-Emitter Voltage VCEO 60 80 , °C PNP 2N5883 2N5884* NPN 2N5885 2N5886* 'Motorola Preferred Device 25 AMPERE COMPLEMENTARY , choices for future use and best overall value. REV 7 © Motorola, Inc. 1995 ftf) MOTOROLA 2N5883 , Symbol Min Max Unit Collector-Emitter Sustaining Voltage (1) 2N5883 , 2N5885 (IC = 200 mAdc, lB = 0


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PDF 2N5883/D 2N5883 2N5885 2N5884 2N5886 2N5883/D 2N5886 MOTOROLA 2N5885 MOTOROLA 2N5984 2N5883 MOTOROLA transistor 2N5884
2N6886

Abstract: 2N5984 transistor 2N5884 2N5883 2N5885 High-Power NPN Silicon Power Transistor 2N5886 MOTOROLA M/2N588S
Text: Product - fT = 4.0 MHz (min) at lc = 1.0 Adc 2N5883 2N5884* NPN 2N5885 2N5886* 'Motorola Proforrocl , °C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB *C 'B 2N5883 , 2N5883 2N5884 2N5885 2NS886 'ELECTRICAL CHARACTERISTICS (Tc - 25°C unless otherwise noted , ) (lc - 15 Ade, Iß · 1-5 Ade) (IC - 25 Ade, Ib · 6.25 Ade) hFE 35 20 4.0 - Symbol 2N5883 ,2N5885 2N5884,2N5886 2N58B3,2N5885 2N5984,2N6886 2N5883 ,2N5885 2N5884,2N5886 2N5883 ,2N5885 2N5884,2N5886 'CBO


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PDF 2N5883 2N5884* 2N5885 2N5886* 2NS884 2NS886 2N5884 2N6886 2N5984 transistor 2N5884 High-Power NPN Silicon Power Transistor 2N5886 MOTOROLA M/2N588S
2012 - 2N5886

Abstract: 2N5883 2N5884 2N5885
Text: 2N5883 2N5884 2N5885 2N5886 PNP NPN w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5883 , 2N5885 series types are , VEBO IC ICM IB PD TJ, Tstg JC 2N5883 2N5885 60 60 2N5884 2N5886 80 80 UNITS V V V A A A W °C °C/W , VCE=Rated VCEO, VBE=1.5V, TC=150°C IEBO VEB=5.0V BVCEO IC=200mA ( 2N5883 , 2N5885) 60 BVCEO IC=200mA (2N5884 , =1.0A, f=1.0MHz 4.0 Cob VCB=10V, IE=0, f=1.0MHz ( 2N5883 , 2N5885) Cob VCB=10V, IE=0, f=1.0MHz (2N5884


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PDF 2N5883 2N5884 2N5885 2N5886 2N5883, 2N5886
2N5883

Abstract: 2N5884 2N5885 2N5886
Text: Inchange Semiconductor Product Specification 2N5883 2N5884 Silicon PNP Power Transistors , Absolute maximum ratings(Ta=) SYMBOL VCBO PARAMETER CONDITIONS 2N5883 Open emitter 2N5884 ANG INCH 2N5883 VCEO Collector-emitter voltage Emitter-base voltage Open , case Inchange Semiconductor Product Specification 2N5883 2N5884 Silicon PNP Power , Collector-emitter sustaining voltage CONDITIONS 2N5883 MIN TYP. MAX UNIT -60 IC=-0.2A ;IB


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PDF 2N5883 2N5884 2N5885 2N5886 2N5883 2N5884 2N5886
2005 - 2N5883

Abstract: 2N5884 2N5885 2N5886
Text: Product Specification www.jmnic.com 2N5883 2N5884 Silicon PNP Power Transistors , VEBO PARAMETER Collector-base voltage Collector-emitter voltage CONDITIONS 2N5883 VALUE 60 Open emitter 2N5884 V 80 2N5883 60 Open base V 2N5884 Emitter-base voltage , case JMnic Product Specification www.jmnic.com 2N5883 2N5884 Silicon PNP Power , Collector-emitter sustaining voltage CONDITIONS 2N5883 MIN TYP. MAX UNIT 60 IC=0.2A ;IB


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PDF 2N5883 2N5884 2N5885 2N5886 2N5883 2N5884 2N5886
1995 - 2N5886 MOTOROLA

Abstract: 2N5984 2N5883 2N5884 2N5885 2N5886
Text: MOTOROLA Order this document by 2N5883 /D SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 , Collector­Emitter Voltage 2N5883 2N5885 2N5884 2N5886 Unit VCEO 60 80 Vdc Collector­Base , 25°C IC/IB = 10 VCC = 30 V VBE(off) = 2 V 1.0 ­11 V 10 2N5883 , 2N5884 (PNP) 2N5885 , ftest. Symbol Min Max Unit 2N5883 , 2N5885 2N5884, 2N5886 VCEO(sus) 60 80 - - Vdc 2N5883 , 2N5885 2N5984, 2N5886 ICEO - - 2.0 2.0 mAdc - - -


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PDF 2N5883/D 2N5883 2N5884* 2N5885 2N5886* 2N5883/D* 2N5886 MOTOROLA 2N5984 2N5883 2N5884 2N5885 2N5886
2002 - 2N5984

Abstract: 2N5886 2N5883 2N5884 2N5885
Text: PNP 2N5883 , 2N5884*, NPN 2N5885, 2N5886* Preferred Device Complementary Silicon High-Power , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (No Rating Collector­Emitter Voltage Symbol 2N5883 2N5885 2N5884 , . © Semiconductor Components Industries, LLC, 2002 May, 2002 ­ Rev. 10 1 Publication Order Number: 2N5883 , SWITCHING CHARACTERISTICS Symbol Min Max Unit 2N5883 , 2N5885 2N5884, 2N5886 VCEO(sus) 60 80 ­ ­ Vdc 2N5883 , 2N5885 2N5984, 2N5886 ICEO ­ ­ 2.0 2.0 mAdc ­ ­


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PDF 2N5883, 2N5884* 2N5885, 2N5886* r14525 2N5883/D 2N5984 2N5886 2N5883 2N5884 2N5885
2N5886

Abstract: 2n5884 2N5883
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O rder this docum ent by 2N5883 /D Complementary , 2N5883 2N5884* NPN 2N5885 2N5886* ` Motorola Preferred Device MAXIMUM RATINGS (1) Rating C o lle cto , Junction Temperature Range Sym bol VCEO VCB Veb 2N5883 2N5885 60 60 5.0 25 50 7.5 200 1.15 - 6 5 t o + 2 00 , ) M O TO RO LA 2N5883 2N5884 2N5885 2N5886 ` ELECTRICAL CHARACTERISTICS (T q = 25°C unless , Ade) hF E Sym bol 2N5883 , 2N5885 2N5884, 2N5886 2N5883 , 2N5885 2N5984, 2N5886 2N5883 , 2N5884


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PDF 2N5883/D 2N5883 2N5884* 2N5885 2N5886* O-204AA 2N5886 2n5884
2N5883

Abstract: 2N5884 2N5885 2N5886
Text: SavantIC Semiconductor Product Specification 2N5883 2N5884 Silicon PNP Power Transistors , maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2N5883 VCBO Collector-base voltage -60 V Open base -80 2N5884 VEBO V -80 2N5883 Collector-emitter voltage Emitter-base , 2N5883 2N5884 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N5883 MIN


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PDF 2N5883 2N5884 2N5885 2N5886 2N5883 2N5884 2N5886
2N5883

Abstract: 2N5885 2N5884 2N5886
Text: Manufacturers of World Class Discrete Semiconductors Datasheet 2N5883 , 2N5884 PNP 2N5885, 2N5886 NPN COMPLEMENTARY SILICON POWER TRANSISTORS JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5883 , 2N5884 , and switching applications. MAXIMUM RATINGS (Tr = 25°C) 2N5883 2N5884 SYMBOL 2N5885 2N5886 , (Tr = 25°C unless otherwise noted) 2N5883 2N5884 2N5885 2N5886 SYMBOL TEST , ts VCC = 10V, IC = 10A, lB1=lB2 = 1.0A tf VCC = 10V, IC = 10A, lB1=lB2 = 1.0A 2N5883 2N5884 2N5885


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PDF 117BB 435-1B24 2N5883, 2N5884 2N5885, 2N5886 2N5884, 2N5883 2N5885
2N5883

Abstract: 2N5884 LE20A 501C Solidev Semiconductors Solidev LC10A
Text: Solidev Semiconductors Silicon Power Transistors Silicon PNP Power Transistors—20 Amp REFERENCE TABLE Code Stock No. 2N5883 2N5884 35071C 35072A ABSOLUTE MAXIMUM RATINGS 2N5883 2N5884 BVCBO (V) 60 80 BVCEO (V) 60 80 BVebo (V) 5.0 5.0 1 c max (A) 20 20 Ptot (W) 200 200 PHYSICAL DIMENSIONS DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS AT 25'C AMBIENT Symbol Conditions 2N5883 Min Typ Max 2N5884 Min Typ Max Units 1CEX VCE=60V Veb=1.5V Vce-80V Veb=1-5V 1.0 1.0 mA mA IcBO Vcb


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PDF 2N5883 2N5884 35071C 5072A 2N5884 Vce-80V Vce-40V LE20A 501C Solidev Semiconductors Solidev LC10A
2009 - 2N5883

Abstract: LE17
Text: SILICON EPITAXIAL PNP TRANSISTOR 2N5883 · High Voltage, Low Saturation Voltages. · Hermetic TO3 Metal Package. · Designed For Power Switching and Linear Applications · Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC , EPITAXIAL PNP TRANSISTOR 2N5883 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols , Document Number 5981 Issue 3 Page 2 of 3 SILICON EPITAXIAL PNP TRANSISTOR 2N5883 MECHANICAL DATA


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PDF 2N5883 O-204AA) 2N5883 LE17
Not Available

Abstract: No abstract text available
Text: ¿57 SGS-THOMSON R (E i[LiO f¡lD [3© T[3(s)iD i (E 2N5883 /2N5885 2N5884/2N5886 COMPLEMENTARY SILICON HIGH POWER TRANSISTORS . 2N5884, 2N5885 AND 2N5886 ARE SGS-THOMSON PREFERRED SALESTYPES , types are 2N5883 and 2N5884 respectively. 2 TO-3 INTERNAL SCHEMATIC DIAGRAM C o (TAB) Cep , 200 °c For PNP types voltage and current values are negative. O ctober 1995 1/4 2N5883 , lc = 3 A hfe 60 80 US 2N5883 /2N5884/2N5885/2N5886 TO-3 (H) MECHANICAL DATA mm


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PDF 2N5883/2N5885 2N5884/2N5886 2N5884, 2N5885 2N5886 2N5885 2N5886 2N5883 2N5884 2N5883/2N5884/2N5885/2N5886
Not Available

Abstract: No abstract text available
Text: ZU S GS-THOMSON [MtgoeilLieraiSiOOS 2N5883 /2N5885 2N5884/2N5886 COMPLEMENTARY SILICON HIGH POWER TRANSISTORS . 2N5884, 2N5885 AND 2N5886 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The , use in power linear amplifiers and switching applications. The complementary PNP types are 2N5883 and , and current values are negative. O ctober 1995 1/4 2N5883 /2N5884/2N5885/2N5886 THERMAL DATA , 0.787 MAX. inch P003N Æ 7 SCS-THOMSON " 7 # M D C H K H aEC lTnO U O C S 3/4 2N5883 /2N5884


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PDF 2N5883/2N5885 2N5884/2N5886 2N5884, 2N5885 2N5886 2N5883 2N5884
Not Available

Abstract: No abstract text available
Text: SILICON EPITAXIAL PNP TRANSISTOR 2N5883 • High Voltage, Low Saturation Voltages. • Hermetic TO3 Metal Package. • Designed For Power Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO , Number 5981 Issue 3 Page 1 of 3 SILICON EPITAXIAL PNP TRANSISTOR 2N5883 ELECTRICAL , EPITAXIAL PNP TRANSISTOR 2N5883 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05


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PDF 2N5883 O-204AA)
2N5883

Abstract: 2N5884 DSASW0036862 hfe 60 IC data book free download transistor equivalents 2n5884
Text: Device Type 2N5883 2N5884 VCEO hFE (V) Min/Max @ IC (A) 60 80 20/100 20/100 10.0 10.0 VCE (sat) @ IC (A) Max (V) 1.00 1.00 15.0 15.0 fT MIN (MHz) 4.0 4.0 PT MAX (W) 200.0 200.0 Case Type Chip Type TO-3 TO-3 265 265 Solitron Devices


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PDF 2N5883 2N5884 2N5883 2N5884 DSASW0036862 hfe 60 IC data book free download transistor equivalents 2n5884
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