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Microchip Technology Inc
2N5781 NPN TRANSISTOR
2N5781 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key 2N5781 Bulk 0 100 - - $19.17 $19.17 $19.17 More Info
Avnet Americas 2N5781 Bulk 0 35 Weeks 100 $19.809 $19.809 $17.1252 $18.531 $18.531 More Info
Newark 2N5781 Bulk 0 100 - - $16.61 $15.97 $15.97 More Info
Microchip Technology Inc 2N5781 0 1 $17.88 $17.88 $17.88 $17.88 $17.88 More Info
Onlinecomponents.com 2N5781 0 - - $15.86 $15.86 $15.86 More Info
More Distributors
NAC 2N5781 0 5 Weeks 111 $25.56 $25.56 $25.56 $25.56 $25.56 More Info
Master Electronics 2N5781 0 - - $15.86 $15.86 $15.86 More Info
Amphenol Corporation
2N5781 Trans GP BJT PNP 65V 3.5A 3-Pin TO-5 - Bulk (Alt: APH ACC04E22-9RW-003)
2N5781 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet Americas 2N5781 Bulk 0 1 $1.55 $1.51 $33.34908 $30.93248 $30.93248 More Info
Central Semiconductor Corp
2N5781 Bipolar Power Transistor NPN Amplifier/Switch 80V 3.5A 3-Pin TO-39 Through Hole Box - Boxed Product (Development Kits) (Alt: 2N5781)
2N5781 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet Americas 2N5781 Box 0 6 Weeks 500 - - - - - More Info
Solid State Devices Inc (SSDI)
2N5781 Transistor |Solid State 2N5781
2N5781 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark 2N5781 Bulk 0 25 - - - - - More Info

2N5781 datasheet (17)

Part ECAD Model Manufacturer Description Type PDF
2N5781 2N5781 ECAD Model Central Semiconductor Small Signal Transistors Original PDF
2N5781 2N5781 ECAD Model Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=80 / Ic=3.5 / Hfe=20-100 / fT(Hz)=8M / Pwr(W)=10 Original PDF
2N5781 2N5781 ECAD Model API Electronics Short form transistor data Scan PDF
2N5781 2N5781 ECAD Model General Electric Silicon P-N-P epitaxial-base transistor. -80V, 10W. - Pol=PNP / Pkg=TO39 / Vceo=80 / Ic=3.5 / Hfe=20-100 / fT(Hz)=8M / Pwr(W)=10 Scan PDF
2N5781 2N5781 ECAD Model Others Transistor Shortform Datasheet & Cross References Scan PDF
2N5781 2N5781 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
2N5781 2N5781 ECAD Model Others Transistor Replacements Scan PDF
2N5781 2N5781 ECAD Model Others Transistor Replacements Scan PDF
2N5781 2N5781 ECAD Model Others Transistor Replacements Scan PDF
2N5781 2N5781 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N5781 2N5781 ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
2N5781 2N5781 ECAD Model Others Shortform Electronic Component Datasheets Scan PDF
2N5781 2N5781 ECAD Model Others Shortform Transistor Datasheet Guide Scan PDF
2N5781 2N5781 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N5781 2N5781 ECAD Model PPC Products Transistor Short Form Data Scan PDF
2N5781 2N5781 ECAD Model RCA Solid State Power Transistor Directory 1976 Scan PDF
2N5781XL 2N5781XL ECAD Model Semelab Bipolar PNP Device in a Hermetically Sealed TO5 Metal Package Original PDF

2N5781 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
TA7290

Abstract: 2N5784 equivalent TA7270 TA7272 2N5783 2N5781 92SS-4J32 2N5782 Tektronix 2712 2N5783 HARRIS
Text: ? Fig. 18 - Typical dc beta characteristics for type 2N5781. Fig. 19 - Typical dc beta , output characteristics for type 2N5781. Fig. 25 - Typical output characteristics for type 2N5784 , Number 2N5781 , 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 413 n = 3 3 -o / Silicon N-P-N and , curves High gain a t high currant High breakdown voltages The 2N5781 , 2N57B2, and 2NS783 are , TO-205AD M A X IM U M R A T IN G S , A bsolute-M axim um Values: 2N5781 N-P-N 2N5784 2N5782


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PDF 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 2N57B2, 2NS783 TA7290 2N5784 equivalent TA7270 TA7272 2N5783 2N5781 92SS-4J32 2N5782 Tektronix 2712 2N5783 HARRIS
2011 - 2N5781

Abstract: 2N5784
Text: 2N5781 PNP 2N5784 NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5781 and 2N5784 types are Complementary Silicon Power , =2.0V, IC=1.0A 20 hFE VCE=2.0V, IC=3.2A 4.0 fT VCE=2.0V, IC=100mA, f=4.0MHz ( 2N5781 ) 8.0 fT VCE=2.0V, IC , =100mA ( 2N5781 ) ton VCC=30V, IC=1.0A, IB1=IB2=100mA (2N5784) toff VCC=30V, IC=1.0A, IB1=IB2=100mA ( 2N5781 ) toff , (25-January 2011) 2N5781 PNP 2N5784 NPN COMPLEMENTARY SILICON POWER TRANSISTORS TO-39 CASE -


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PDF 2N5781 2N5784 100mA 100mA, 2N5781) 200kHz 2N5784)
TA7290

Abstract: 2N5781 TA7272 2N5784 equivalent 2N5783
Text: type 2N5781. Fig. 19 - Typical dc beta characteristics fo r type 2N5784. COLLECTOR CURRENT ( I c , 2N5781. Fig. 2 5 - Typical o u tp u t characteristics fo r type 2N5784. 2 4 6 8 S 2S S - , 2N5781 , 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 File Number 413 Silicon N-P-N and P-N-P , current High breakdown voltages The 2N5781 , 2N5782, and 2N5783 are epitaxial-base silicon p-n-p , . V,CER (sus) ,(sus) V,CEO' V EBO Ic IB Py 10 1 2N5781 2N5784 80 2N5782 2N5785 65 2N5783


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PDF 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 2N5783 TA7290 2N5781 TA7272 2N5784 equivalent
C2688

Abstract: TA7270 TA7290 2n5784 pnp transistor 2N5784 2N5783 2n5783 rca RCA-2N5781 2n5782 RCA tRANSISTOR c2688
Text: «C 1 i COLLECTOR CURRENT (lC)-mA Fig. 10 — Typicaf gain-bandwidth product for types 2N5781. , characteristics for type 2N5781. e e 4 • lie ww, t "ÛI 1 Ik J S î p I™. UJ 1 Ik 1 i « V-K- fi J « 1 ' s , (V0E1—V 92CS-23953 Fig. 30 — Typical input characteristics for type 2N5781. 0 0.1 0.4 O.i 0.1 1.0 , General-Purpose Power Transistors _ 2N5781 , 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 File Number 413 Silicon N-P-N , » High gain at high current ■High breakdown voltages RCA- 2N5781 ,2N5782, and 2N5783 are


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PDF 3a750Ã 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 RCA-2N5781 2N5783 C2688 TA7270 TA7290 2n5784 pnp transistor 2N5784 2n5783 rca 2n5782 RCA tRANSISTOR c2688
Not Available

Abstract: No abstract text available
Text: 2N5781 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) SILICON EPITAXIAL PNP TRANSISTOR 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. General-Purpose types for Switching and Linear-Amplifier Applications 0.89 max. (0.035) 0.41 (0.016) 0.53 , 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) The 2N5781 is intended for medium-power , Document Number 6659 Issue 1 2N5781 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated


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PDF 2N5781 2N5781 O205AD)
2006 - 2N5781

Abstract: No abstract text available
Text: 2N5781 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) SILICON EPITAXIAL PNP TRANSISTOR 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. General-Purpose types for Switching and Linear-Amplifier Applications 0.89 max. (0.035) 0.41 (0.016) 0.53 , 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) The 2N5781 is intended for medium-power , 2N5781 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter ICER Collector


Original
PDF 2N5781 2N5781 O205AD)
Not Available

Abstract: No abstract text available
Text: m 2N5781 \ \ SILICON PNP TRANSISTOR DESCRIPTION: The 2N5781 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS lc 3.5 A Ib 1.0 A V -65 V ce P diss 10 W @ T C = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 17.5 °C/W 0JC CHARACTERISTICS SYMBOL tc= 2 5 °c MINIMUM TEST CONDITIONS B V ceo Iq — 100 mA B V cbo V V -140 V VC = -5 0 V E R Be = 100 Â


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PDF 2N5781 2N5781
audio ampli 3w

Abstract: 2N3440 2N5416 REPLACEMENT 2N3055 2N3772 APPLICATIONS 40852 2N5781 2N5954 2N6107 2N6248 2N6372
Text: 90x90 150x150 150x150 150x150 150x150 2N5781 [P-N-P] 2N6372 [N-P-N] 2N5954 [P-N-P] 2N6292 [N-P-N] Fi , CT 676 677 677 678 678 2N5781 VCEH(SUS) - -80 V hFE • 20-100 ® -1 A fT = 8 MHz min. 2N6372 VCER , -31 677 2N5784 VCERISUSI -80 V lc = 2.5 A ITO-391 413 E 2N5781 VCER(SUSI-80V lc - -2.5 A (TO-39) 413 E , 2N3054 2N5497A 2N3055 2N3772 - 60 to 150V 2N1486 2N2102 2N4036 2N1486 2N3441 2N5298 2N5781 2N5784


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PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 audio ampli 3w 2N3440 2N5416 REPLACEMENT 2N3055 2N3772 APPLICATIONS 40852 2N5781 2N5954 2N6107 2N6248 2N6372
2N6292

Abstract: 2N3055 ta8662 2N6178 2N5781 2N5954 2N6107 2N6248 2N6372 2N6472
Text: 90x90 150x150 150x150 150x150 150x150 2N5781 [P-N-P] 2N6372 [N-P-N] 2N5954 [P-N-P] 2N6292 [N-P-N] Fi , CT 676 677 677 678 678 2N5781 VCEH(SUS) - -80 V hFE • 20-100 ® -1 A fT = 8 MHz min. 2N6372 VCER , -31 677 2N5784 VCERISUSI -80 V lc = 2.5 A ITO-391 413 E 2N5781 VCER(SUSI-80V lc - -2.5 A (TO-39) 413 E , 2N3054 2N5497A 2N3055 2N3772 - 60 to 150V 2N1486 2N2102 2N4036 2N1486 2N3441 2N5298 2N5781 2N5784


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PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 2N6292 2N3055 ta8662 2N6178 2N5781 2N5954 2N6107 2N6248 2N6372 2N6472
2N6181

Abstract: 2N3055 2n3055 complement 40852 2N3054 2N5293 2N5294 2N5495 2N5783 2N5786
Text: 2N5784 VCERISUSI -80 V lc = 2.5 A ITO-391 413 E 2N5781 VCER(SUSI-80V lc - -2.5 A (TO-39) 413 E 2N5493 , 2N3054 2N5497A 2N3055 2N3772 - 60 to 150V 2N1486 2N2102 2N4036 2N1486 2N3441 2N5298 2N5781 2N5784 , 2N5782 2N5781 2N5783 FAMILY [p-n-p] (silicon) fT = 8 MHz min; Pj = 10 W max PNP Complement of 2N5786 , 0.12 1.5 1.2 I 2N5784 NPN Complement of 2N5781 65 80 - 20 100 1 2 10* 1 65 0.5 1 0.1 1.5 1 1 A|CER-MA


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PDF 2N5293 2N5294 ITO-2201 2N6106 2N6107 O-220) 2N5786 2N5783 2N3054 2N5955 2N6181 2N3055 2n3055 complement 40852 2N5495
2N3055 TO-220

Abstract: 2N6289 ta8662 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372 2N6472
Text: 90x90 150x150 150x150 150x150 150x150 2N5781 [P-N-P] 2N6372 [N-P-N] 2N5954 [P-N-P] 2N6292 [N-P-N] Fi , CT 676 677 677 678 678 2N5781 VCEH(SUS) - -80 V hFE • 20-100 ® -1 A fT = 8 MHz min. 2N6372 VCER , -31 677 2N5784 VCERISUSI -80 V lc = 2.5 A ITO-391 413 E 2N5781 VCER(SUSI-80V lc - -2.5 A (TO-39) 413 E , 2N5783 2N5782 2N5781 2N5783 FAMILY [p-n-p] (silicon) fT = 8 MHz min; Pj = 10 W max PNP Complement of , 0.12 1.5 1.2 I 2N5784 NPN Complement of 2N5781 65 80 - 20 100 1 2 10* 1 65 0.5 1 0.1 1.5 1 1 A|CER-MA


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PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 2N3055 TO-220 2N6289 ta8662 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372 2N6472
2N5496

Abstract: TO-220-AA 2N5783 2N5672 2N5495 2n5781 2n5578 2N5492 2N5493 2N5494
Text: 2N5782 2N5781 2N5783 FAMILY [p-n-p] (silicon) fT = 8 MHz min; Pj = 10 W max PNP Complement of 2N5786 , 0.12 1.5 1.2 I 2N5784 NPN Complement of 2N5781 65 80 - 20 100 1 2 10* 1 65 0.5 1 0.1 1.5 1 1 A|CER-MA


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PDF 2N5496 2N5492 O-220 2N5493 2N5494 2N5495 TO-220-AA 2N5783 2N5672 2n5781 2n5578
2N5781

Abstract: No abstract text available
Text: ÀSII SILICON PNP TRANSISTOR DESCRIPTION: The 2N5781 is Designed for General Purpose Amplifier and Switching Applications. 2N5781 PACKAGE STYLE TO- 39 MAXIMUM RATINGS Ie ib VeE pd is s Tj Ts t g 0je 3.5 A 1.O A -es v 1O W @ Te $ 25 0C -e5 0C to +2OO 0C -e5 0C to +2OO 0C 17.5 0C/W 1 = EMITTER 2 = BASE 3 = COLLECTOR CHARACTERISTICS SYMBOL BVc e o BVc e r BVc b o Ic e o Ic e x Ie b o hFE T o = 25 0 c t e s t c o n d it io n s MINIMUM -65 t y p ic a l MAXIMUM u n it


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PDF 2N5781 2N5781
TA8662

Abstract: 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372 2N6472 2N6488 2N6491
Text: 90x90 150x150 150x150 150x150 150x150 2N5781 [P-N-P] 2N6372 [N-P-N] 2N5954 [P-N-P] 2N6292 [N-P-N] Fi , CT 676 677 677 678 678 2N5781 VCEH(SUS) - -80 V hFE • 20-100 ® -1 A fT = 8 MHz min. 2N6372 VCER


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PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 TA8662 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372 2N6472 2N6488 2N6491
40632

Abstract: 300W TRANSISTOR AUDIO AMPLIFIER npn 40872 40636 40872 transistor TA8326 120w audio power amplifier 2n3055 audio output circuit 2N5415 2N6320
Text: High-Current, High-Speed High-Current, High-Speed CEX (sus) 'CEV 2N TYPES 2N5783 2N5782 2N5781 2N5783 , Complement of 2N5781 65 80 - 20 100 1 2 10* 1 65 0.5 1 0.1 1.5 1 1 A|CER-MA AUDIO TYPES â


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PDF 2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) 40632 300W TRANSISTOR AUDIO AMPLIFIER npn 40872 40636 40872 transistor TA8326 120w audio power amplifier 2n3055 audio output circuit 2N5415 2N6320
2n3773 power Amplifier

Abstract: 2N3055 hfe 2n3055 2n3055 complement 2N1482 2N3054 2N344 2N5298 2N5786 2N6478
Text: 150V 2N1486 2N2102 2N4036 2N1486 2N3441 2N5298 2N5781 2N5784 2N3442 2N3879 2N5293A 2N5954* 2N3265 , , High-Speed High-Current, High-Speed CEX (sus) 'CEV 2N TYPES 2N5783 2N5782 2N5781 2N5783 FAMILY [p-n-p , Complement of 2N5782 50 65 - 20 100 1.2 2 10* 1 50 0.75 1.2 0.12 1.5 1.2 I 2N5784 NPN Complement of 2N5781


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PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 2n3773 power Amplifier 2N3055 hfe 2n3055 2n3055 complement 2N1482 2N3054 2N344 2N5298 2N5786 2N6478
2002 - 2N5781

Abstract: No abstract text available
Text: 2N5781 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 80V 5.08 (0.200) typ. IC = 3.5A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS


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PDF 2N5781 O205AD) 19-Jun-02 2N5781
2N3440 2N5416 REPLACEMENT

Abstract: 2N5294 replacement 2N5296 RCA 2N6108 RCA 2N5954 2N5416 REPLACEMENT 2N3772 RCA RCA 40250 2N5781 2N6107
Text: 90x90 150x150 150x150 150x150 150x150 2N5781 [P-N-P] 2N6372 [N-P-N] 2N5954 [P-N-P] 2N6292 [N-P-N] Fi , CT 676 677 677 678 678 2N5781 VCEH(SUS) - -80 V hFE • 20-100 ® -1 A fT = 8 MHz min. 2N6372 VCER , -31 677 2N5784 VCERISUSI -80 V lc = 2.5 A ITO-391 413 E 2N5781 VCER(SUSI-80V lc - -2.5 A (TO-39) 413 E


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PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 2N3440 2N5416 REPLACEMENT 2N5294 replacement 2N5296 RCA 2N6108 RCA 2N5954 2N5416 REPLACEMENT 2N3772 RCA RCA 40250 2N5781 2N6107
BD243

Abstract: 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372 2N6472 2N6488 2N6491
Text: 90x90 150x150 150x150 150x150 150x150 2N5781 [P-N-P] 2N6372 [N-P-N] 2N5954 [P-N-P] 2N6292 [N-P-N] Fi , CT 676 677 677 678 678 2N5781 VCEH(SUS) - -80 V hFE • 20-100 ® -1 A fT = 8 MHz min. 2N6372 VCER


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PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 BD243 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372 2N6472 2N6488 2N6491
2N5781

Abstract: 2N5954 2N6107 2N6248 2N6292 2N6372 2N6472 2N6488 2N6491 2N6108
Text: 90x90 150x150 150x150 150x150 150x150 2N5781 [P-N-P] 2N6372 [N-P-N] 2N5954 [P-N-P] 2N6292 [N-P-N] Fi , CT 676 677 677 678 678 2N5781 VCEH(SUS) - -80 V hFE • 20-100 ® -1 A fT = 8 MHz min. 2N6372 VCER


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PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372 2N6472 2N6488 2N6491 2N6108
2N5672

Abstract: 2n5038 complement complement of 2N3053 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178 2N6180
Text: 150V 2N1486 2N2102 2N4036 2N1486 2N3441 2N5298 2N5781 2N5784 2N3442 2N3879 2N5293A 2N5954* 2N3265 , , High-Speed High-Current, High-Speed CEX (sus) 'CEV 2N TYPES 2N5783 2N5782 2N5781 2N5783 FAMILY [p-n-p , Complement of 2N5782 50 65 - 20 100 1.2 2 10* 1 50 0.75 1.2 0.12 1.5 1.2 I 2N5784 NPN Complement of 2N5781


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PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 2N5672 2n5038 complement complement of 2N3053 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178 2N6180
2N3440 2N5416 REPLACEMENT

Abstract: 2N5954 2N5781 2N6107 2N6248 2N6292 2N6372 2N6472 2N6488 2N6491
Text: 90x90 150x150 150x150 150x150 150x150 2N5781 [P-N-P] 2N6372 [N-P-N] 2N5954 [P-N-P] 2N6292 [N-P-N] Fi , CT 676 677 677 678 678 2N5781 VCEH(SUS) - -80 V hFE • 20-100 ® -1 A fT = 8 MHz min. 2N6372 VCER , -31 677 2N5784 VCERISUSI -80 V lc = 2.5 A ITO-391 413 E 2N5781 VCER(SUSI-80V lc - -2.5 A (TO-39) 413 E


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PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 2N3440 2N5416 REPLACEMENT 2N5954 2N5781 2N6107 2N6248 2N6292 2N6372 2N6472 2N6488 2N6491
2N3055

Abstract: 2N6179 2N3773 voltage regulator push pull inverter 2n3055 voltage regulator 2N1486 2N3054 431 regulator 2n5298 2N5954
Text: APPLICATION INFORMATION. . . Power Types [N-P-N & P-N-P] for Inverter/Switching Regulator Service Frequency Range Peak Voltage Required Up to 0.2 A Peak 0.2 to 1 A Primary Current Rec 1 to 4 A uirement 4 to 20 A >20 A 60 Hz to 50 kHz 10 to 60V 2N3053 2N4037 2N5321 2N5323 2N6179 2N6181 2N3054 2N5497A 2N3055 2N3772 - 60 to 150V 2N1486 2N2102 2N4036 2N1486 2N3441 2N5298 2N5781 2N5784 2N3442 2N3879 2N5293A 2N5954* 2N3265 2N3773 2N5039 2N5672 2N6248* 41012 41013 2N5671 2N6032 150 to 450V 2N3440 2N5416


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PDF 2N3053 2N4037 2N5321 2N5323 2N6179 2N6181 2N3054 2N5497A 2N3055 2N3772 2N3773 voltage regulator push pull inverter 2n3055 voltage regulator 2N1486 431 regulator 2n5298 2N5954
2007 - 2N5781

Abstract: No abstract text available
Text: ISCFdÈ ©E¢è©E¢è text/html About keyword search: News Contact Employment Site Home part number search: 2N5781 (#23861) PNP Transistor Division Mil-Spec Shipping Lawrence (none) (none) Datasheet Qual Data (none) Contact Microsemi Symbol Power IC BV(CBO) VCEO BVEBO Max 10 3.5 80 65 5 Unit W A V V V RFQ/Sample Package TO-5(STD) Maximum Electrical Rating Power Dissipation Collector Current Breakdown Voltage Collector -to-Base Voltage Collector to Emitter Open Voltage Emitter to


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PDF 2N5781 2N5781
2002 - 2N5781

Abstract: No abstract text available
Text: 2N5781 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 80V 5.08 (0.200) typ. IC = 3.5A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS


Original
PDF 2N5781 O205AD) 17-Jul-02 2N5781
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