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JANTXV2N5686 Microsemi Corporation Power Bipolar Transistor, 50A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, SIMILAR TO TO-3, 2 PIN
JANTX2N5686 Microsemi Corporation Power Bipolar Transistor, 50A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin, TO-3, 2 PIN
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2N5686 SPC Multicomp Farnell element14 21 £16.33 £5.44
2N5686 SPC Multicomp Newark element14 244 $7.70 $3.98
2N5686 NTE Electronics Inc Newark element14 55 $11.57 $9.98
2N5686 SPC Multicomp element14 Asia-Pacific 40 $8.35 $5.56
2N5686G ON Semiconductor Allied Electronics & Automation - $13.09 $11.81
2N5686G ON Semiconductor Avnet - €10.78 €8.37
2N5686G ON Semiconductor Avnet 85 $13.41 $7.49
2N5686G ON Semiconductor element14 Asia-Pacific 81 $16.10 $10.21
2N5686G ON Semiconductor Newark element14 182 $11.18 $7.73
2N5686G ON Semiconductor Avnet - $13.15 $9.09
2N5686G ON Semiconductor Future Electronics - $7.94 $7.94
2N5686G ON Semiconductor Rochester Electronics 3,067 $12.60 $10.24
2N5686G ON Semiconductor RS Components 264 £9.70 £9.70
2N5686G ON Semiconductor Farnell element14 91 £10.56 £7.41
2N5686G. ON Semiconductor Newark element14 85 $13.41 $8.49
2N5686JAN Microchip Technology Inc Avnet - $303.29 $252.49
2N5686JANTX Microchip Technology Inc Avnet - $461.79 $384.49
JANTX2N5686 Microsemi Corporation Chip1Stop 319 $250.73 $246.40

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2N5686 datasheet (53)

Part Manufacturer Description Type PDF
2N5686 Microsemi NPN Transistor Original PDF
2N5686 Motorola 50A NPN SILICON POWER TRANSISTOR 80V 300W Original PDF
2N5686 On Semiconductor Bipolar Power TO3 NPN 50A 80V; Package: TO-204 (TO-3); No of Pins: 2; Container: Tray; Qty per Container: 100 Original PDF
2N5686 On Semiconductor High-Current Complementary Silicon Power Transistors Original PDF
2N5686 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=50 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=300 Original PDF
2N5686 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
2N5686 API Electronics Short form transistor data Scan PDF
2N5686 Digitron 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 300 WATTS Scan PDF
2N5686 Diode Transistor Transistor Short Form Data Scan PDF
2N5686 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N5686 General Transistor Power Transistor Selection Guide Scan PDF
2N5686 Mospec POWER TRANSISTORS(50A,300W) - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=50 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=300 Scan PDF
2N5686 Mospec High-Current Complementary Silicon Power Transistor Scan PDF
2N5686 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2N5686 Motorola The European Selection Data Book 1976 Scan PDF
2N5686 Motorola European Master Selection Guide 1986 Scan PDF
2N5686 Motorola Power Transistor Selection Guide Scan PDF
2N5686 Others Transistor Shortform Datasheet & Cross References Scan PDF
2N5686 Others Basic Transistor and Cross Reference Specification Scan PDF
2N5686 Others Shortform Transistor PDF Datasheet Scan PDF

2N5686 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
bsc 68e

Abstract: 2N5684 motorola 2N5685 MOTOROLA 2N5686 2N5685 2N5684 3015 hj N5685 MOTOROLA 2N5686 PNP 2N5684
Text: 25 Ade MAXIMUM RATINGS (1) Rating Symbol 2N5685 2N5684 2N5686 Unit Collector-Emitter Voltage VCEO , . 1995 ftf) MOTOROLA 2N5684 2N5685 2N5686 'ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise , Voltage (Note 1) 2N5685 (lC = 0.2 Adc, Ib = 0) 2N5684, 2N5686 vCEO(sus) 60 80 — Vdc Collector Cutoff Current (Vce = 30 Vdc, Ib = 0) 2N5685 (VqE = 40 Vdc, Ib = 0) 2N5684, 2N5686 'ceo — 1.0 1.0 mAdc , , 2N5686 (VqE = 60 Vdc, VEB(0ff) = 1-5 Vdc, Tq = 150°C) 2N5685 (VqE = 80 Vdc, VEB(0ff) = 1-5 Vdc, Tq =


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PDF 2N5684/D 2N5685 2N5684 2N5686 2N5686 97A-05 O-204AE bsc 68e 2N5684 motorola 2N5685 MOTOROLA 3015 hj N5685 MOTOROLA 2N5686 PNP 2N5684
2006 - 2N5684

Abstract: 2N5686 PNP 2N5684
Text: 2N5686 . . . designed for use in high-power amplifier and switching circuit applications. · High , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (1) Symbol 2N5684 2N5686 Unit VCEO 80 Vdc Collector-Base , Publication Order Number: 2N5684/D 2N5684 2N5686 ÎÎÎ Î Î Î Î Î ÎÎÎ Î Î Î , Width v 300 s, Duty Cycle v 2.0%. 2.0 Cob 2N5684 2N5686 15 - -30 V RL +2.0 V TO , 0.01 0.5 0.7 1.0 +4.0 V 2N5684 (PNP) 2N5686 (NPN) DUTY CYCLE 2.0% 2.0 3.0 5.0 7.0 10


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PDF 2N5684 2N5686 2N5684/D 2N5684 2N5686 PNP 2N5684
2N5683

Abstract: 2N5684 2N5685 2N5686 amplifier 2N5686 2NS685 2n5686 gain
Text: MAXIMUM RATINGS Characteristic Symbol 2N5683 2NS685 2N5684 2N5686 Unit Collector-Emitter Voltage VCEO 60 , 75 100 125 150 175 200 Tc, TEMPERATURE^ C) PNP NPN 2N5683 2N5685 2N5684 2N5686 50 AMPERE , Emitter Sustaining Voltage (1) (lc = 200 mA, L = 0 ) 2N5683, 2N5685 2N5684, 2N5686 VCEO(SUS) 60 80 V Collector Cutoff Current (Vce = 30 V, lB = 0 ) 2N5683, 2N5685 (VCE = 40 V, lB = 0 ) 2N5684, 2N5686 'ceo 1.0 , 1.5 V ) 2N5684, 2N5686 (VCE = 60 V, VBE J = 1.5 V, Tc = 150°C ) 2N5683, 2N5685 (VCE = 80 V, VBE(ofl


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PDF 2N5683 2NS685 2N5684 2N5686 2N5683, 2N5685 2N5684, 2N5686 2N5685 amplifier 2N5686 2n5686 gain
1999 - 2N5685

Abstract: 2N5686 1000C 2000C
Text: TECHNICAL DATA 2N5685 JAN, JTX, JTXV 2N5686 JAN, JTX, JTXV MIL-PRF QPL DEVICES , 2N5685 2N5686 Units VCEO VCBO VEBO IB IC 60 60 80 80 5.0 15 50 Vdc Vdc Vdc , 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit 2N5685 2N5686 V(BR)CEO 60 80 2N5685 2N5686 ICEO 500 500 µAdc 2N5685 2N5686 ICEX 500 500 µAdc 2N5685 2N5686 ICBO 2.0 2.0 mAdc OFF CHARACTERISTICS Collector-Emitter Breakdown


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PDF 2N5685 2N5686 MIL-PRF-19500/464 1000C 2N5685 2N5686 O-204AA) 1000C 2000C
2001 - 2n5684

Abstract: No abstract text available
Text: use in high-power amplifier and switching circuit applications. 2N5684 NPN 2N5686 50 AMPERE , ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS (1) Rating Symbol VCEO VCB VEB IC IB 2N5684 2N5686 , 2N5684 2N5686 - - - - - 1.0 2.0 10 2.0 5.0 Collector Cutoff Current (VCE = 80 Vdc, VEB(off) = , MHz) 2N5686 Small-Signal Current Gain (IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) *Indicates JEDEC , 0.07 0.05 0.03 0.02 TJ = 25°C IC/IB = 10 VCC = 30 V 2N5684 (PNP) 2N5686 (NPN) VBB +4.0 V


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PDF 2N5684 2N5686 2n5684
2001 - 2n5686

Abstract: 2N5685 PNP 2N5684 2N5684
Text: amplifier and switching circuit applications. 2N5684 2N5685 2N5686 * *ON Semiconductor Preferred Device , ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS (1) Rating Symbol VCEO VCB VEB IC IB 2N5685 60 60 2N5684 2N5686 80 80 , Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) 2N5685 2N5684, 2N5686 2N5685 2N5684, 2N5686 , Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) ICEX mAdc 2N5685 2N5684, 2N5686 2N5685 2N5684, 2N5686 ICBO mAdc 2N5685 2N5684, 2N5686 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) DC Current Gain


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PDF 2N5684 2N5685 2N5686 r14525 2N5684/D 2n5686 PNP 2N5684
2002 - 2N5686

Abstract: 2N5685 1000C 2000C
Text: Level 2N5685 JAN JANTX JANTXV 2N5686 MAXIMUM RATINGS Ratings Symbol , Power Dissipation 2N5685 2N5686 Units VCEO VCBO VEBO IB IC @ TC = +250C (1) @ TC = +1000C , . Max. Unit 2N5685 2N5686 V(BR)CEO 60 80 2N5685 2N5686 ICEO 500 500 µAdc 2N5685 2N5686 ICEX 500 500 µAdc 2N5685 2N5686 ICBO 2.0 2.0 mAdc OFF , , 2N5686 JAN SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics Emitter-Base Cutoff Current


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PDF MIL-PRF-19500/464 2N5685 2N5686 2N5685 2N5686 1000C O-204AA) 1000C 2000C
2010 - 2n5686 gain

Abstract: No abstract text available
Text: 2N5686 80V High-current complementary silicon power transistor 5.28 T. http://store.americanmicrosemiconductor.com/ 2n5686.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N5686 2N5686 8 0 V High- c urrent co m plem ent ary s ilico n po w er t ransis t o r Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very , 2N5686 $ 8.25 $ 5.28 $ 2.97 Total Price $ 5.28 Company Testimonials Store Policies Contact Us


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PDF 2N5686 com/2n5686 2N5686 2n5686 gain
1995 - 2N5686 motorola

Abstract: PNP 2N5684 2N5685 2N5684 motorola 2N5686 2N5685 MOTOROLA 2N5683 equivalent 2N5684 2N5683 MOTOROLA 2N5686
Text: High-Current Complementary Silicon Power Transistors NPN 2N5685 2N5686 * . . . designed for use in , 300 WATTS MAXIMUM RATINGS (1) Symbol Rating 2N5685 2N5684 2N5686 Unit , 0.1 0.07 0.05 td 0.2 2N5684 (PNP) 2N5685, 2N5686 (NPN) 0.3 ­12 V RB tr 1.0 0.7 , - 2.0 Vdc Output Capacitance 2N5684 (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N5685, 2N5686 , , 2N5686 2N5685 2N5684, 2N5686 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0


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PDF 2N5684/D 2N5684 2N5685 2N5686* 2N5684/D* 2N5686 motorola PNP 2N5684 2N5685 2N5684 motorola 2N5686 2N5685 MOTOROLA 2N5683 equivalent 2N5684 2N5683 MOTOROLA 2N5686
2N5685

Abstract: 2N5685 MOTOROLA 2n5684 MOTOROLA 2N5686 2N5686 amplifier 2N5686
Text: 50 15 300 1.715 - 6 5 t o +200 2N5684 2N5686 Unit Vdc Vdc Vdc Adc Adc Watts W/*C 80 eo SO , Device Data 2N5684 2N5685 2N5686 ` ELECTRICAL CHARACTERISTICS O c - 25°C unless otherwise noted , Data. Note 1: Pulse Test: Pulse Width s 300 us, Duty Cycle s 2.0%. 2N5684 2N5685, 2N5686 fT 2.0 - 2000 , Vdc) 1-5 Vdc, T c - 150°C) 1-5 Vdc, Tc - 150" C) 2N5685 2N5684, 2N5686 2N5685 2N5684, 2N5686 ICEX 2N5685 2N5684, 2N5686 2N5685 2N5684, 2N5686 'CBO 2N5685 2N5684, 2N5686 lEBO _ _ _ _ _ _ _ _ Symbol


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PDF 2N5685 2N5684 2N5686 2N5685 MOTOROLA MOTOROLA 2N5686 2N5686 amplifier 2N5686
2007 - 2N5684

Abstract: 2N5684G 2N5686 2N5686G
Text: 2N5684 (PNP), 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages , G A YY WW MEX ORDERING INFORMATION Device 2N5684G 250 2N5686 200 = Device Code x = 4 or 6 = Pb-Free Package = Location Code = Year = Work Week = Country of Orgin 2N5686G , Publication Order Number: 2N5684/D 2N5684 (PNP), 2N5686 (NPN) ÎÎÎ Î Î Î Î Î , ) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N5684 2N5686 Cob - 2000 1200


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PDF 2N5684 2N5686 2N5684/D 2N5684 2N5684G 2N5686 2N5686G
2N5685

Abstract: 2N5686 3041 v 464c
Text: TYPES 2N5685 AND 2N5686 , JAN, JANTX AND JANTXV This specification is approved for use by all , +100°C VCBO VCE VEB O IB IC TJ and TSTG RJC O W 2N5685 2N5686 W V , IC = 25 A dc Min 2N5685 2N5686 15 15 Max hFE3 1/ VBE(sat) 1/ VCE(sat)1 1/ VCE , ,200 1,200 Max toff ton Min 15 15 pF 2N5685 2N5686 1/ Pulsed (see 4.5.1). 5.0 , ) V(BR)CEO 2N5685 2N5686 Collector to emitter cutoff current V dc V dc 60 80 2N5685


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PDF MIL-PRF-19500/464C MIL-S-19500/464B 2N5685 2N5686, MIL-PRF-19500. 2N5686 3041 v 464c
Not Available

Abstract: No abstract text available
Text: MIL-PRF-19500/464 DEVICES LEVELS 2N5685 2N5686 JAN JANTX JANTV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N5685 2N5686 , 5.0Vdc T4-LDS-0162 Rev. 1 (100546) 2N5685 2N5686 V(BR)CEO 2N5685 2N5686 ICEO 500 500 μAdc 2N5685 2N5686 ICEX 10 10 μAdc 2N5685 2N5686 ICBO 2.0 2.0 mAdc IEBO , 2N5686 (2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0% T4-LDS-0162 Rev. 1 (100546


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PDF MIL-PRF-19500/464 2N5685 2N5686 T4-LDS-0162
2010 - 2N5686

Abstract: 2N5685 2N5685 equivalent
Text: MIL-PRF-19500/464 DEVICES LEVELS 2N5685 2N5686 JAN JANTX JANTV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N5685 2N5686 , (100546) 2N5685 2N5686 V(BR)CEO 2N5685 2N5686 ICEO 500 500 2N5685 2N5686 ICEX 10 10 Adc 2N5685 2N5686 ICBO 2.0 2.0 mAdc IEBO 1.0 mAdc Vdc 60 80 , Test 3 VCE = 50Vdc, IC = 560mAdc VCE = 60Vdc, IC = 640mAdc 2N5685 2N5686 (2) Pulse Test: Pulse


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PDF MIL-PRF-19500/464 2N5685 2N5686 T4-LDS-0162 2N5686 2N5685 2N5685 equivalent
2001 - 2N5686

Abstract: 2N5684 PNP 2N5684 amplifier 2N5686
Text: 2N5686 . . . designed for use in high­power amplifier and switching circuit applications. · High , Voltage 2N5684 2N5686 Unit VCEO 80 Vdc Collector­Base Voltage VCB 80 Vdc , May, 2001 ­ Rev. 10 1 Publication Order Number: 2N5684/D 2N5684 2N5686 ÎÎÎ Î Î Î Î , Gain (IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) 2.0 Cob 2N5684 2N5686 15 ­ *Indicates , . 2N5684 (PNP) 2N5686 (NPN) 20 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 3. Turn­On


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PDF 2N5684 2N5686 r14525 2N5684/D 2N5686 2N5684 PNP 2N5684 amplifier 2N5686
2N5683

Abstract: digitron bound brook 2N5686 2n5685 2N5684 saia amplifier 2N5686 digitron pulse 063T1 TM-35
Text: WEST BOUND BROOK, NEW JERSEY 08805 2N5683,2N5684 PNP 2N5685, 2N5686 NPN HIGH CURRENT COMPLEMENTARY , RATINGS Rating Symbol 2N5683 2N5685 2N5684 2N5686 Unit Collector Emitter Voltage VCEO 60 80 Vdc , 08805 2N5683, 2N5684 PNP, 2N5685, 2N5686 NPN •ELECTRICAL CHARACTERISTICS (Tq = 25°C unless , 11 (lr ■0 2 Ado, lB - O) 2N5683. 2N56B5 2N5684, 2N5686 vCEO(susl 60 80 - Vdc Collector CutoM , (olf| • 1 5 Vdc) 2N5684, 2N5686 (VCE - 60 Vdc. VE8(„|(| - 1 5 Vdc. Tc = 150°CI 2N5683. 2N5685 IVCE


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PDF M2L07 2N5683 2N5684 2N5685 2N5686 25Adc digitron bound brook saia amplifier 2N5686 digitron pulse 063T1 TM-35
2N5684G

Abstract: 2N5686G 2N5684 2N5686
Text: 2N5684 (PNP), 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages , ORDERING INFORMATION Device 2N5684G 250 2N5686 200 = Device Code x = 4 or 6 = Pb-Free Package = Location Code = Year = Work Week = Country of Orgin 2N5686G 150 Package Shipping , ), 2N5686 (NPN) ÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎ Î Î Î Î Î , ) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N5684 2N5686 Cob - 2000 1200


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PDF 2N5684 2N5686 2N5684G 2N5686G 2N5684 2N5686
2N5683

Abstract: PNP 2N5684 2N5685 TQ-204M 419AR 2n5684 motorola 2N5683 motorola
Text: / ^ TECHNICAL DATA SEMICONDUCTOR 2N5683, 2N56S4 NPN 2N5685, 2N5686 HIGH-CURRENT , 0084558 S | 2N5683, 2N5684 PNP, 2N5685, 2N5686 NPN T -3 3 -« a 3 r- 3 3 - J S · E L E C T R , ) V d c* T C 8 5 150°C) 2N 5683,2N 5685 V dc, T C = 150°CJ 2N5684, 2N5686 ICBO 2N5633, 2N5685 2N 5684, 2N5686 'e b o - 2N5683, 2N5685 2N5684, 2N5686 2N 5683, 2N5685 2N5684, 2N5686 V cE O isu s) 60 80 , MOTOROLA SC XSTRS/R F 12E D | b3b7254 GOflMSSI 7 | 2N5683, 2N5684 PNP, 2N5685, 2N5686 NPN T ' 3 3 - 5 3


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PDF r-33-J3 2N5683, 2N56S4 2N5685, 2N5686 2N5683 PNP 2N5684 2N5685 TQ-204M 419AR 2n5684 motorola 2N5683 motorola
2007 - Not Available

Abstract: No abstract text available
Text: 2N5684 (PNP), 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages , 2N5686 200 = Device Code x = 4 or 6 = Pb-Free Package = Location Code = Year = Work Week = Country of Orgin 2N5686G 150 Package Shipping TO-3 (Pb-Free) 100 Units/Tray TO , October, 2007 - Rev. 12 1 Publication Order Number: 2N5684/D 2N5684 (PNP), 2N5686 (NPN , 2N5686 Cob - 2000 1200 (IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 15 -


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PDF 2N5684 2N5686 2N5684/D
2N5685

Abstract: 2N5686 Transformer Inspection Testing ck50
Text: , POWER, TYPES 2N5685 AND 2N5686 , JAN, JANTX, AND JANTXV This specification is approved for use by all , 2N5686 PT (1) TC = +25°C PT (1) TC = +100°C VCBO VCEO VEBO IB IC TJ and TSTG , V dc Min Max Type Min 2N5685 2N5686 Max Min 15 15 60 60 Max 5 5 , Min Max 2 2 15 15 2N5685 2N5686 1,200 1,200 20 20 5.0 5.0 Switching (see , impedance 2/ 3131 See 4.3.2 Breakdown voltage collector to emitter 2N5685 2N5686 3011 Bias


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PDF MIL-PRF-19500/464G MIL-PRF-19500/464F 2N5685 2N5686, MIL-PRF-19500. 2N5686 Transformer Inspection Testing ck50
2004 - Not Available

Abstract: No abstract text available
Text: Submit ¡ ¡ 2N5686 Availability Buy 2N5686 at our online store ! 2N5686 Information Cate , 2N5686 Specifications Milita ry/High-R e l : N V(BR )C EO (V) : 80 V(BR )C BO (V) : 80 I(C ) Max . (A


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PDF 2N5686
2N5685

Abstract: 2n5686
Text: TYPES 2N5685, 2N5686 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER -AM PLIFIER A N D HIGH-SPEED-SW ITCHING APPLICATIO N S DESIG N ED FOR C O M P LE M E N TA R Y USE W ITH 2N 5683, 2N 5684 · · · , . 60 V 60 V 5V « - 50 A «- 15 A 2N5686 80 V 80 V 5V W - "C ontinuous C ollector , P O S T O F F IC E B O X 5 0 1 2 TYPES 2N5685, 2N5686 N-P-N SINGLE-DIFFUSED SILICON POWER , Common-Base Open-Circuit C0 bo NOTES: 2N5685 MIN M AX Iß = Iß » o C D ii 2N5686 MIN M A X SO 1 1 2


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PDF 2N5685, 2N5686 2N5685
2N5685

Abstract: leistungstransistoren 2N5683 2N5684 2N5686 BU105
Text: TYPES 2N5685, 2N5686 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N5683, 2N5684 • 300 Watts at 25°C Case Temperature • 50-A Rated Continuous Collector Current • Min fr of 2 MHz at 10 V, 5 A mechanical data , 2N5686 'Collector-Base V 80 V , noted) PARAMETER TEST CONDITIONS 2N5685 2N5686 UNIT MIN MAX MIN MAX v(BR)CEO


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PDF 2N5685, 2N5686 2N5683, 2N5684 2N5685 2N5686 leistungstransistoren 2N5683 2N5684 BU105
2N39024

Abstract: jantx 2n5302
Text: BIPOLAR N P N P O W E R T R A N S IS T O R S PACKAGE PEAK DEVICE TYPE 2N3715* 2N3716*' 2N39024* 2N5302' * 2N5303* 2N5685* 2N5686 * 2N6249* 2N6250*' 2N6251*" bvceo VCI (sot) hFE m in/m ux 50-150 ~ TO-204 (TO-3) c AMPS 10.0 10 VOLTS 60 80 325 60 80 60 80 225 300 375 k @ VCE A V 1,0/2.0 1.0/2.0 1.0/5.0 15.0/2.0 10.0/4.0 25.0/2.0 25.0/2.0 10.0/3.0 10.0/3.0 10.0/3,0 max VOLIS 0.8 0.8 0.8 1.7 1.5 1.0 1.0 1.5 1.5 1.5 k@>B A A 5.0/0.5 5.0/0.5 1.0/0.1 i 5.0/2.0 10.0


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PDF 2N3715* 2N3716* 2N39024* 2N5302' 2N5303* 2N5685* 2N5686* 2N6249* 2N6250* 2N6251* 2N39024 jantx 2n5302
Not Available

Abstract: No abstract text available
Text: 2N5686+JAN Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)50 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)5.0 @I(C) (A) (Test Condition)50 @I(B) (A) (Test Condition)10 h(FE) Min. Current gain.15 h(FE) Max. Current gain.60 @I(C) (A) (Test Condition)25 @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq2.0M @I(C) (A) (Test Condition)5.0 @V(CE) (V


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PDF 2N5686
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