The Datasheet Archive

Top Results (4)

Part Manufacturer Description Datasheet Download Buy Part
2N5551 Central Semiconductor Corp Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
2N5551 TIN/LEAD Central Semiconductor Corp TRANS NPN 160V 0.6A TO-92
CP336V-2N5551-CT Central Semiconductor Corp Power Bipolar Transistor
CP336V-2N5551-CT20 Central Semiconductor Corp TRANS NPN 1=20PCS
SF Impression Pixel

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  You can filter table by choosing multiple options from dropdownShowing 57 results of 76
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2N5551 National Semiconductor Corporation Bristol Electronics 75 - -
2N5551 Texet Semiconductors Bristol Electronics 12,450 $0.11 $0.01
2N5551 Taitron Components Inc Master Electronics 70 $0.07 $0.04
2N5551 Central Semiconductor Corp Avnet - $0.31 $0.29
2N5551 Fairchild Semiconductor Corporation Bristol Electronics 15,375 $0.11 $0.01
2N5551 Philips Semiconductors Bristol Electronics 6,190 $0.11 $0.01
2N5551 NTE Electronics Inc Newark element14 3,303 $0.28 $0.21
2N5551 SPC Multicomp Newark element14 1,361 $0.40 $0.09
2N5551 ON Semiconductor Newark element14 2,130 $0.29 $0.03
2N5551 SPC Multicomp Farnell element14 683 £0.51 £0.14
2N5551 National Semiconductor Corporation Bristol Electronics 70 $0.11 $0.11
2N5551 Diotec Semiconductor AG TME Electronic Components 4,480 $0.06 $0.01
2N5551 SPC Multicomp element14 Asia-Pacific 20 $0.46 $0.11
2N5551 ON Semiconductor element14 Asia-Pacific 90,186 $0.36 $0.04
2N5551 ON Semiconductor Farnell element14 86,421 £0.13 £0.04
2N5551 Fairchild Semiconductor Corporation Rochester Electronics 40,000 $0.05 $0.04
2N5551 SPC Multicomp element14 Asia-Pacific 525 $0.30 $0.11
2N5551 D26Z Fairchild Semiconductor Corporation Bristol Electronics 6,000 $0.11 $0.01
2N5551BU ON Semiconductor Newark element14 11,409 $0.23 $0.02
2N5551BU Fairchild Semiconductor Corporation Rochester Electronics 656,486 $0.04 $0.03
2N5551BU ON Semiconductor Farnell element14 12,769 £0.12 £0.03
2N5551BU ON Semiconductor Avnet 59,902 $0.33 $0.03
2N5551BU ON Semiconductor Future Electronics - $0.06 $0.06
2N5551BU ON Semiconductor element14 Asia-Pacific 11,309 $0.17 $0.03
2N5551BU. Fairchild Semiconductor Corporation Newark element14 59,902 $0.25 $0.02
2N5551CTA Fairchild Semiconductor Corporation Rochester Electronics 504 $0.02 $0.02
2N5551G ON Semiconductor Wuhan P&S 5 $0.12 $0.12
2N5551G ON Semiconductor Allied Electronics & Automation - $198.38 $198.38
2N5551G ON Semiconductor Allied Electronics & Automation - $0.06 $0.05
2N5551G ON Semiconductor Avnet - - -
2N5551RL1G ON Semiconductor Wuhan P&S 3 $0.10 $0.05
2N5551RL1G ON Semiconductor Allied Electronics & Automation - $0.12 $0.12
2N5551RLRAG ON Semiconductor Bristol Electronics 206 - -
2N5551RLRAG ON Semiconductor Farnell element14 - £0.03 £0.03
2N5551RLRAG ON Semiconductor Allied Electronics & Automation - $0.11 $0.08
2N5551RLRAG ON Semiconductor element14 Asia-Pacific 548 $0.32 $0.25
2N5551TA ON Semiconductor Chip1Stop 500 $0.45 $0.04
2N5551TA ON Semiconductor Chip1Stop 14,000 $0.04 $0.03
2N5551TA ON Semiconductor Farnell element14 1,177 £0.12 £0.03
2N5551TA ON Semiconductor Avnet 10,000 $0.10 $0.04
2N5551TA ON Semiconductor Newark element14 1,072 $0.30 $0.06
2N5551TA ON Semiconductor Avnet - $0.02 $0.02
2N5551TA ON Semiconductor Future Electronics - $0.07 $0.06
2N5551TA Fairchild Semiconductor Corporation Rochester Electronics 89,643 $0.04 $0.03
2N5551TA ON Semiconductor element14 Asia-Pacific 1,242 $0.21 $0.04
2N5551TA ON Semiconductor Chip1Stop 6,000 $0.05 $0.04
2N5551TF ON Semiconductor Chip1Stop 8,000 $0.04 $0.04
2N5551TF ON Semiconductor Chip1Stop 3,350 $0.09 $0.08
2N5551TF Fairchild Semiconductor Corporation Rochester Electronics 24,947 $0.04 $0.03
2N5551TF ON Semiconductor Avnet 12,000 $0.05 $0.04
2N5551TFR ON Semiconductor Future Electronics 16,000 $0.07 $0.06
2N5551TFR ON Semiconductor Chip1Stop 72,000 $0.04 $0.03
2N5551TFR Fairchild Semiconductor Corporation Rochester Electronics 22,000 $0.04 $0.03
2N5551TFR ON Semiconductor Avnet 18,000 $0.06 $0.05
2N5551TFR Fairchild Semiconductor Corporation New Advantage Corporation 24,000 $0.15 $0.13
2N5551TFR ON Semiconductor Chip1Stop 3,371 $0.05 $0.03
2N5551YBU Fairchild Semiconductor Corporation Rochester Electronics 3,379 $0.04 $0.03

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2N5551 datasheet (116)

Part Manufacturer Description Type PDF
2N5551 AUK NPN Silicon Transistor (General purpose amplifier High voltage application) Original PDF
2N5551 Avic Electronics NPN General Purpose Amplifier Original PDF
2N5551 Boca Semiconductor NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR Original PDF
2N5551 Central Semiconductor Small Signal Transistors TO-92 Case (Continued) Original PDF
2N5551 Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
2N5551 Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
2N5551 Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
2N5551 Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
2N5551 Kexin NPN Transistors Original PDF
2N5551 Korea Electronics TRANS GP BJT NPN 160V 0.6A 3TO-92 Original PDF
2N5551 Micro Commercial Components TRANS GP BJT NPN 160V 0.6A 3TO-92 Original PDF
2N5551 On Semiconductor mplifier Transistors(NPN Silicon) Original PDF
2N5551 On Semiconductor Amplifier Transistors NPN Original PDF
2N5551 Philips Semiconductors NPN High-Voltage Transistor Original PDF
2N5551 Philips Semiconductors Small-signal Transistors Original PDF
2N5551 ROHM General Purpose Bipolar Transistor, NPN, 160V, TO-92, 3-Pin Original PDF
2N5551 Siemens Cross Reference Guide 1998 Original PDF
2N5551 Sinyork Mini size of Discrete semiconductor elements Original PDF
2N5551 Taitron Components Small Signal High Voltage Transistor (NPN) Original PDF
2N5551 TY Semiconductor NPN Transistors - TO-92 Original PDF

2N5551 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - 2n5551

Abstract: 2N55551 2N5551 circuit 2n5550
Text: 2N5550, 2N5551 ORDERING INFORMATION Device 2N5550 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551 2N5551G 2N5551RL1 2N5551RLRA 2N5551RLRM 2N5551RLRP 2N55551ZL1 Package TO-92 TO-92 TO-92 TO-92 (Pb-Free) TO-92 TO , 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features · Pb-Free , Symbol VCEO VCBO VEBO IC PD 2N5550 2N5551 140 160 6.0 600 625 5.0 1.5 12 - 55 to +150 160 180 Unit Vdc , June, 2004 - Rev. 3 109 Publication Order Number: 2N5550/D 2N5550, 2N5551 ELECTRICAL


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PDF 2N5550, 2N5551 2N5550 2N5551 2N55551 2N5551 circuit
2N5551

Abstract: 2N5550 2N55551 2N5550G 2N5551G 2N55551ZL1G 2N5551 TO92 to-92 marking 2n5550 2N5551RLRAG 2N5551RLRPG
Text: ) 5000 Units / Bulk 2N5551RL1G TO-92 (Pb-Free) 2N5551RLRAG TO-92 (Pb-Free) 2N5551RLRPG , 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features · These are , Value VCEO Vdc 140 160 2N5550 2N5551 Collector - Base Voltage VCBO 1 EMITTER Vdc 160 180 2N5550 2N5551 Emitter - Base Voltage 2 BASE Unit VEBO 6.0 Vdc , future use and best overall value. 2N5550, 2N5551 ELECTRICAL CHARACTERISTICS (TA = 25°C unless


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PDF 2N5550, 2N5551 2N5550 2N5551 2N5550 2N55551 2N5550G 2N5551G 2N55551ZL1G 2N5551 TO92 to-92 marking 2n5550 2N5551RLRAG 2N5551RLRPG
2004 - 2N5551

Abstract: 2N55551 2N5551 circuit ALL 2N5551
Text: ORDERING INFORMATION Device 2N5550 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551 2N5551RL1 2N5551RLRA 2N5551RLRM 2N5551RLRP 2N55551ZL1 Package TO-92 TO-92 TO-92 TO-92 (Pb-Free) TO-92 TO-92 TO-92 TO-92 TO-92 TO , 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features · Pb-Free , Watts mW/°C °C 12 3 mW mW/°C TO-92 CASE 29 STYLE 1 2N5550 2N5551 140 160 6.0 600 160 180 Unit Vdc Vdc , May, 2004 - Rev. 2 Publication Order Number: 2N5550/D 2N5550, 2N5551 ELECTRICAL


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PDF 2N5550, 2N5551 2N5550 2N5551 2N5550/D 2N55551 2N5551 circuit ALL 2N5551
2009 - 2n5551

Abstract: 2N5551 SOT23
Text: Package Top Mark Packing Method 2N5551TA 5551 TO-92 3L Ammo 2N5551TFR 5551 TO-92 3L Tape and Reel 2N5551TF 5551 TO-92 3L Tape and Reel 2N5551BU 5551 TO-92 3L , 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 2 TO , Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix “-Y” means hFE 180~240 in 2N5551 (Test


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PDF 2N5551 MMBT5551 2N5551 OT-23 2N5551TA 2N5551TFR 2N5551TF 2N5551BU 2N5551 SOT23
2N5551

Abstract: 2N5550 transistor equivalent 2n5551 st 2n5551 OF 2n5550 2N5551 TO92 2N5400 2N5401 st 25 a hz15
Text: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , Symbol Value Unit Collector Emitter Voltage ST 2N5550 ST 2N5551 VCEO VCEO 140 160 V V Collector Base Voltage ST 2N5550 ST 2N5551 VCBO VCBO 160 180 V V VEBO , / 2N5551 Characteristics at Tamb = 25 OC Parameter at VCE = 5 V, IC = 50 mA Min. Max. Unit , ST 2N5550 V(BR)CBO ST 2N5551 V(BR)CBO at VCE = 5 V, IC = 10 mA Symbol ST 2N5550 V(BR)CEO


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PDF 2N5550 2N5551 2N5400 2N5401 2N5550 2N5551 transistor equivalent 2n5551 st 2n5551 OF 2n5550 2N5551 TO92 st 25 a hz15
2004 - 2N55551

Abstract: 2N5551 2N55551ZL1 2N5551RLRM 2N5551RLRA 2N5551RL1 2N5551G 2N5550RLRPG 2N5550RLRP ALL+2N5551
Text: ) 5,000 Unit / Bulk 2N5551RL1 TO-92 2,000 Tape & Reel 2N5551RLRA TO-92 2,000 Tape & Reel 2N5551RLRM TO-92 2,000 Tape & Ammo Box 2N5551RLRP TO-92 2,000 Tape & Ammo Box 2N55551ZL1 TO-92 2,000 Tape & Ammo Box Device 2N5550RLRPG 2N5551 2N5551G For information on , 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features · Pb-Free , COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector - Emitter


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PDF 2N5550, 2N5551 2N5550 2N5550/D 2N55551 2N5551 2N55551ZL1 2N5551RLRM 2N5551RLRA 2N5551RL1 2N5551G 2N5550RLRPG 2N5550RLRP ALL+2N5551
2006 - 2N5551

Abstract: 2N5551 circuit transistor equivalent 2n5551 2N5550RLRPG 2N5550RLRP 2N5550RLRAG 2N5550RLRA 2N5550 1N914 2N5550G
Text: TO-92 2N5551RL1G TO-92 (Pb-Free) 2N5551RLRA TO-92 2N5551RLRAG 2N5551RLRM 2N5551RLRMG 2N5551RLRP 2N5551RLRPG 2N55551ZL1 2N55551ZL1G 2000 / Tape & Reel TO-92 (Pb-Free) TO , 2N5550G 2N5550RLRA 2N5550RLRAG 2N5550RLRP 2N5550RLRPG 2N5551 2N5551G 2N5551RL1 Package , 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features · Pb-Free , Collector - Emitter Voltage Value Unit VCEO 2N5550 2N5551 Collector - Base Voltage 140 160


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PDF 2N5550, 2N5551 2N5550 2N5550/D 2N5551 2N5551 circuit transistor equivalent 2n5551 2N5550RLRPG 2N5550RLRP 2N5550RLRAG 2N5550RLRA 2N5550 1N914 2N5550G
2n5551

Abstract: 2n5550 transistor 2n5551 2N5551 TO92
Text: package. PNP complements: 2N5400 and 2N5401. PINNING PIN 1 2 3 collector base emitter 2N5550; 2N5551 , REFERENCE DATA SYMBOL VcBO PARAMETER collector-base voltage 2N5550 2N5551 VCEO CONDITIONS open emitter , collector-emitter voltage 2N5550 2N5551 peak collector current total power dissipation DC current gain ·c m mA mW Ptc hFE 60 80 lc = 10 mA; VC E= 5 V 2N5550 2N5551 Co collector capacitance , 2N5550; 2N5551 PARAMETER collector-base voltage 2N5550 2N5551 collector-emitter voltage 2N5550 2N5551


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PDF 2N5400 2N5401. 2N5550; 2N5551 AM279 2N5550 2n5551 transistor 2n5551 2N5551 TO92
2N5551

Abstract: 2N5550 2N555 ic CD4081 pin diagram datasheet 2N5400 2N5401 st 2n5551
Text: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , ST 2N5550 VCEO 140 V ST 2N5551 VCEO 160 V ST 2N5550 VCBO 160 V ST 2N5551 VCBO 180 V VEBO 6 V Collector Current IC 600 mA Power Dissipation , ST 2N5550 / 2N5551 Characteristics at Tamb=25 oC Symbol Unit hFE hFE hFE hFE hFE hFE , 2N5550 at VCE=5V, IC=10mA Typ. ST 2N5550 ST 2N5551 DC Current Gain at VCE=5V, IC=1mA Min


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PDF 2N5550 2N5551 2N5400 2N5401 2N5550 100MHz 2N5551 2N555 ic CD4081 pin diagram datasheet st 2n5551
2N5551

Abstract: 2N5550 transistor equivalent 2n5551 st 2n5551 st2n5551 transistor 2n5550 2N5401 2N5400 transistor 2n5551 st2n5401
Text: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , Symbol Value Unit Collector Emitter Voltage ST 2N5550 ST 2N5551 VCEO VCEO 140 160 V V Collector Base Voltage ST 2N5550 ST 2N5551 VCBO VCBO 160 180 V V VEBO , / 2N5551 Characteristics at Tamb = 25 OC Parameter at VCE = 5 V, IC = 50 mA Min. Max. Unit , ST 2N5550 V(BR)CBO ST 2N5551 V(BR)CBO at VCE = 5 V, IC = 10 mA Symbol ST 2N5550 V(BR)CEO


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PDF 2N5550 2N5551 2N5400 2N5401 2N5550 2N5551 transistor equivalent 2n5551 st 2n5551 st2n5551 transistor 2n5550 transistor 2n5551 st2n5401
2006 - 2N5551B

Abstract: tr 5551 2N5551 SOT23 2n5551 BR 5551 2N5551 circuit 2N5551BU BR N 5551
Text: Product 2N5551BU 2N5551CBU 2N5551CTA 2N5551TA 2N5551TAR 2N5551TF 2N5551TFR 2N5551_J05Z 2N5551_J18Z 2N5551_J61Z , (Asm. Plant Code) &3 (3-Digit Date Code) Line 2: 2N Line 3: 5551 2N5551_J05Z Full Production N/A TO-92 3 BULK 2N5551_J18Z Full Production N/A TO-92 3 BULK 2N5551_J61Z , 2N5551- MMBT5551 NPN General Purpose Amplifier April 2006 2N5551- MMBT5551 NPN General , www.fairchildsemi.com 2N5551- MMBT5551 Rev. B 2N5551- MMBT5551 NPN General Purpose Amplifier Electrical


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PDF 2N5551- MMBT5551 MMBT5551 2N5551 OT-23 2N5551 2N5551B tr 5551 2N5551 SOT23 BR 5551 2N5551 circuit 2N5551BU BR N 5551
1996 - 2N5551

Abstract: 2N5551 circuit motorola 1N914 diode datasheet 1N914 2N5550 2N5551 diodes inc 2N5551 motorola
Text: Transistors 2N5550 2N5551 * NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector ­ Emitter Voltage , ) Collector ­ Base Breakdown Voltage (IC = 100 µAdc, IE = 0 ) V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 2N5551 Emitter ­ Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 100 , = 100°C) Vdc V(BR)EBO Vdc ICBO 2N5550 2N5551 2N5550 2N5551 Emitter Cutoff Current


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PDF 2N5550/D 2N5550 2N5551* 2N5550 2N5551 2N5550/D* 2N5551 2N5551 circuit motorola 1N914 diode datasheet 1N914 2N5551 diodes inc 2N5551 motorola
2001 - 2N5551 circuit

Abstract: 2N5550 2n5551
Text: ON Semiconductort Amplifier Transistors NPN Silicon 2N5550 2N5551 * *ON Semiconductor , VCEO VCBO VEBO IC PD PD TJ, Tstg 2N5550 140 160 6.0 600 625 5.0 1.5 12 ­55 to +150 2N5551 160 180 Unit , %. 2N5550 2N5551 2N5550 2N5551 IEBO V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 2N5551 V(BR)EBO ICBO - - - - , 2N5550 2N5551 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) hFE 2N5550 2N5551 2N5550 2N5551 2N5550 2N5551 VCE(sat


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PDF 2N5550 2N5551* 2N5551 226AA) Unit10 2N5551 circuit
2006 - 2N5551 SOT23

Abstract: 2N5551 circuit 2N5551 MMBT5551 2N5551 fairchild
Text: 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features · This device is designed for , Fairchild Semiconductor Corporation 2N5551- MMBT5551 Rev. B 1 www.fairchildsemi.com 2N5551- , =50m Vtf=5 Xtf=8 Rb=10) 2 2N5551- MMBT5551 Rev. B www.fairchildsemi.com 2N5551- MMBT5551 NPN , (V) 3 2N5551- MMBT5551 Rev. B C cb www.fairchildsemi.com 2N5551- MMBT5551 NPN General , TEMPERATURE ( o C) 125 150 4 2N5551- MMBT5551 Rev. B www.fairchildsemi.com 2N5551- MMBT5551


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PDF 2N5551- MMBT5551 2N5551 OT-23 MMBT5551 2N5551 SOT23 2N5551 circuit 2N5551 2N5551 fairchild
2007 - 2N5551

Abstract: No abstract text available
Text: TO−92 (Pb−Free) 5000 Units / Bulk 2N5551RL1G TO−92 (Pb−Free) 2N5551RLRAG TOâ , 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are , ˆ’ Emitter Voltage Value VCEO 2N5550 2N5551 Collector − Base Voltage Vdc 140 160 1 EMITTER VCBO Vdc 160 180 2N5550 2N5551 Emitter − Base Voltage 2 BASE Unit VEBO , : 2N5550/D 2N5550, 2N5551 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted


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PDF 2N5550, 2N5551 2N5550 2N5550/D 2N5551
1996 - 2N5551 diodes inc

Abstract: 2N5551 circuit diodes inc 2N5551 2N5550 2N5550 motorola 1N914 2N5551 2N5551 TO92 2N5551 motorola
Text: Transistors 2N5550 2N5551 * NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector ­ Emitter Voltage , ) Collector ­ Base Breakdown Voltage (IC = 100 µAdc, IE = 0 ) V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 2N5551 Emitter ­ Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 100 , = 100°C) Vdc V(BR)EBO Vdc ICBO 2N5550 2N5551 2N5550 2N5551 Emitter Cutoff Current


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PDF 2N5550/D 2N5550 2N5551* 2N5550 2N5551 2N5550/D* 2N5551 diodes inc 2N5551 circuit diodes inc 2N5551 2N5550 motorola 1N914 2N5551 2N5551 TO92 2N5551 motorola
2004 - C2N5550

Abstract: No abstract text available
Text: 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , ST 2N5550 VCEO 140 V ST 2N5551 VCEO 160 V ST 2N5550 VCBO 160 V ST 2N5551 VCBO 180 V VEBO 6 V Collector Current IC 600 mA Power Dissipation , A IS AVAILABLE mW C C 2N5550 / 2N5551 Characteristics at Tamb=25 oC Symbol DC Current , hFE hFE hFE hFE hFE 60 80 60 80 20 30 - 250 250 - - ST 2N5550 ST 2N5551


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PDF 2N5550 2N5551 2N5400 2N5401 2N5550 Emitte50 15kHZ C2N5550
2N5551

Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 , V - 140 V open base 2N5551 V ebo UNIT - 2N 5550 e m itter-base voltage MAX. open e m itte r 2N5551 V cE O MIN. - c olle cto r current (DC) 160 V - , ; 2N5551 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER VALUE UNIT 200 K/W therm , qb = 100 V nA c o lle cto r cut-off current 2N5551 Ie = 0; V qb = 120 V |iA - 50


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PDF 2N5550; 2N5551 SC-43 2N5551
2N5551

Abstract: 2N5550 2N5400 2N5401
Text: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , ST 2N5550 VCEO 140 V ST 2N5551 VCEO 160 V ST 2N5550 VCBO 160 V ST 2N5551 VCBO 180 V VEBO 6 V Collector Current IC 600 mA Power Dissipation , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 29/04/2004 ST 2N5550 / 2N5551 , . ST 2N5550 ST 2N5551 DC Current Gain at VCE=5V, IC=1mA Min. 6 - - V ST 2N5550


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PDF 2N5550 2N5551 2N5400 2N5401 2N5550 15kHZ 2N5551
2n5551

Abstract: 2N5550 transistor equivalent 2n5551 2N5400 2N5401
Text: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , Unit ST 2N5550 VCEO 140 V ST 2N5551 VCEO 160 V ST 2N5550 VCBO 160 V ST 2N5551 VCBO 180 V VEBO 6 V Collector Current IC 600 mA Power , /04/2004 ST 2N5550 / 2N5551 Characteristics at Tamb=25 oC Symbol Unit hFE hFE hFE hFE , =50mA Max. ST 2N5550 at VCE=5V, IC=10mA Typ. ST 2N5550 ST 2N5551 DC Current Gain at VCE


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PDF 2N5550 2N5551 2N5400 2N5401 2N5550 100MHz 2n5551 transistor equivalent 2n5551
2002 - 2N5551 circuit

Abstract: in4148 3mh inductor dc to ac converter IN4148 operating frequency EL driving 2n5551 EL driver M5003 2n5551 chip
Text: ) With delay using TG trigger VDD=3V 3mH 13obm VDD=3V 2N5551 VDD=3V 3mH 13obm IN4148 10K CHOP EL 2N5551 2N5551 VDD=3V CK VDD VSS ON VSS ON M5003 1.3 x , 2N5551 TG M5003 1.3 x 1.5mm2 =VDD CKX CHOP EL VDD TGB TG IN4148 10K VDD=3V 3mH 13obm IN4148 10K 2N5551 EL 2N5551 IN4148 10K 2N5551 EL 2N5551 VDD


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PDF M5003 M5003 2N5551 13obm IN4148 2N5551 circuit 3mh inductor dc to ac converter IN4148 operating frequency EL driving 2n5551 EL driver 2n5551 chip
2n5551

Abstract: 2N5550 st 2n5551
Text: issipation Derate above 2 5 X (a 2N5550 2N5551 * Sym bol VCEO v CBO v EBO 'c Pd Pd TJ ' T stg 2N5550 140 160 6.0 600 625 5.0 1.5 12 - 55 to +150 2N5551 160 180 U n it Vdc Vdc Vdc m Adc mW mWX W att mWX X , a = 100D Cl 0. T a = 100X1 2N5550 2N5551 2N5550 2N5551 lEBO v (BRICEO 2N5550 2N5551 v IBR|CBO 2N5550 2N5551 v (BR)EBO 'CBO - - - | S ym b o l I M in [ M ax I U n it Vdc 140 , Adc, V çg = 5.0 Vdc) h FE 2N5550 2N5551 2N5550 2N5551 2N5550 2N5551 v CE(sat) Both Types 2N5550


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PDF 2N5550 2N5551* 2N5551 O-226AA) 2N5550, 2N5551 st 2n5551
2H5551

Abstract: 2Ns551
Text: M AXIM UM RATINGS Rating Sym bol 2N5550 2N5551 * 2N5550 140 160 6.0 600 625 5.0 1.5 12 - 55 to + 150 2N5551 160 180 U n it Collector-Emitter Voltage Collector-Base Voltage Emitter-Base , , iE = 0) 0) o, t a = ioo°ci o, t a = ioo°c) v (BR)CEO 2N5550 2N5551 v (BR)CBO 2N5550 2N5551 V(BR)EBO >CBO 2N5550 2N5551 2N5550 2N5551 - - Vdc 140 160 160 180 6.0 Vdc - - - Vdc - , CHARACTERISTICS« 1) Iebo - DC Current Gain ÜC = 1-0 mAdc, V CE = 5.0 Vdc) hFE 2N5550 2N5551 2N5550


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PDF 2N5550 2N5551* 2N5551 O-226AA) 2H5551 2H5551 2Ns551
2001 - 2N5551 circuit

Abstract: 2N5550 2N5551 2N555 1N914
Text: ON Semiconductort 2N5550 2N5551 * Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector­Emitter , , IE = 0 ) V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 2N5551 Emitter­Base Breakdown Voltage (IE , ICBO 2N5550 2N5551 2N5550 2N5551 Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO µAdc , Industries, LLC, 2001 June, 2001 ­ Rev. 1 1 Publication Order Number: 2N5550/D 2N5550 2N5551


Original
PDF 2N5550 2N5551* 2N5551 226AA) r14525 2N5550/D 2N5551 circuit 2N5550 2N5551 2N555 1N914
2007 - 2N5551

Abstract: 2N5550 2N5551 circuit TRANSISTORE 10D3 2N5400 2N5401
Text: 2N5550 / 2N5551 2N5550 / 2N5551 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial , gegurtet in Ammo-Pack Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) 2N5550 2N5551 , 250 ­ VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 50 mA 2N5551 hFE hFE , , IB = 5 mA 1 2N5550 2N5551 2N5550 2N5551 VCEsat VCEsat ­ ­ ­ ­ 0.25 V 0.20 V , Semiconductor AG http://www.diotec.com/ 1 2N5550 / 2N5551 Characteristics (Tj = 25°C) Kennwerte


Original
PDF 2N5550 2N5551 UL94V-0 2N5550 2N5400 2N5551 2N5551 circuit TRANSISTORE 10D3 2N5401
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