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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2N5550 Motorola Semiconductor Products New Advantage Corporation 29 - -
2N5550 Central Semiconductor Corp Avnet - $0.13 $0.11
2N5550 ON Semiconductor Rochester Electronics 14,423 $0.05 $0.04
2N5550 NTE Electronics Inc Newark element14 836 $0.22 $0.17
2N5550 Motorola Semiconductor Products ComS.I.T. 4,520 - -
2N5550 Fairchild Semiconductor Corporation Bristol Electronics 52 - -
2N5550 . Bristol Electronics 370 $0.06 $0.04
2N5550 Fairchild Semiconductor Corporation Bristol Electronics 8 - -
2N5550 (D023) Fairchild Semiconductor Corporation Bristol Electronics 253 - -
2N5550/D26Z Fairchild Semiconductor Corporation Rochester Electronics 24,000 $0.02 $0.02
2N5550BU Fairchild Semiconductor Corporation Rochester Electronics 13,454 $0.04 $0.03
2N5550G ON Semiconductor Allied Electronics & Automation - $0.06 $0.05
2N5550G ON Semiconductor Rochester Electronics 64,405 $0.11 $0.09
2N5550G. ON Semiconductor Farnell element14 - £0.20 £0.06
2N5550G. ON Semiconductor element14 Asia-Pacific 683 $0.49 $0.05
2N5550RA Fairchild Semiconductor Corporation Bristol Electronics 2,000 $0.06 $0.01
2N5550RLRA ON Semiconductor Rochester Electronics 18,000 $0.05 $0.04
2N5550RLRPG ON Semiconductor Chip1Stop 400 $0.42 $0.37
2N5550TA ON Semiconductor Chip1Stop 8,000 $0.03 $0.03
2N5550TA ON Semiconductor Farnell element14 8,620 £0.15 £0.05
2N5550TA Fairchild Semiconductor Corporation Rochester Electronics 120,815 $0.04 $0.03
2N5550TA ON Semiconductor element14 Asia-Pacific 8,620 $0.18 $0.03
2N5550TA ON Semiconductor Avnet 12,000 $0.05 $0.04
2N5550TA ON Semiconductor Newark element14 8,625 $0.26 $0.04
2N5550TAR Fairchild Semiconductor Corporation Bristol Electronics 1,223 - -
2N5550TAR ON Semiconductor Chip1Stop 18,000 $0.03 $0.02
2N5550TAR ON Semiconductor Avnet - $0.02 $0.02
2N5550TAR Fairchild Semiconductor Corporation Rochester Electronics 1,822 $0.04 $0.03
2N5550TF Fairchild Semiconductor Corporation Rochester Electronics 48,424 $0.04 $0.03
2N5550TFR ON Semiconductor Avnet - $0.02 $0.02
2N5550TFR ON Semiconductor Future Electronics - $0.04 $0.04
2N5550TFR Fairchild Semiconductor Corporation Rochester Electronics 18,000 $0.04 $0.03

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2N5550 datasheet (77)

Part Manufacturer Description Type PDF
2N5550 Central Semiconductor Small Signal Transistors TO-92 Case (Continued) Original PDF
2N5550 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original PDF
2N5550 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
2N5550 Korea Electronics TRANS GP BJT NPN 140V 0.6A 3TO-92 Original PDF
2N5550 On Semiconductor Amplifier Transistors NPN Silicon Original PDF
2N5550 On Semiconductor Amplifier Transistor NPN Original PDF
2N5550 On Semiconductor Amplifier Transistors NPN Original PDF
2N5550 Philips Semiconductors NPN high-voltage transistors Original PDF
2N5550 Philips Semiconductors Small-signal Transistors Original PDF
2N5550 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
2N5550 Crimson Semiconductor Transistor Selection Guide Scan PDF
2N5550 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan PDF
2N5550 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N5550 Honey Technology 140 V, NPN silicon expitaxial planar transistor Scan PDF
2N5550 Korea Electronics EPITAXIAL PLANAR NPN TRANSISTOR Scan PDF
2N5550 Korea Electronics High Voltage Transistor Scan PDF
2N5550 Micro Electronics High Voltage Transistors Scan PDF
2N5550 Micro Electronics SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Scan PDF
2N5550 Micro Electronics Semiconductor Device Data Book Scan PDF
2N5550 Micro Electronics Semiconductor Devices Scan PDF

2N5550 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - 2n5551

Abstract: 2N55551 2N5551 circuit 2n5550
Text: 2N5550 , 2N5551 ORDERING INFORMATION Device 2N5550 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551 2N5551G , 2N5550 , 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features · Pb-Free Packages are Available* · Device Marking: Device Type, e.g., 2N5550 , Date Code http://onsemi.com , Symbol VCEO VCBO VEBO IC PD 2N5550 2N5551 140 160 6.0 600 625 5.0 1.5 12 - 55 to +150 160 180 Unit Vdc , June, 2004 - Rev. 3 109 Publication Order Number: 2N5550 /D 2N5550 , 2N5551 ELECTRICAL


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PDF 2N5550, 2N5551 2N5550 2N5551 2N55551 2N5551 circuit
2004 - 2N5551

Abstract: 2N55551 2N5551 circuit ALL 2N5551
Text: ORDERING INFORMATION Device 2N5550 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551 2N5551RL1 2N5551RLRA , 2N5550 , 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features · Pb-Free , Watts mW/°C °C 12 3 mW mW/°C TO-92 CASE 29 STYLE 1 2N5550 2N5551 140 160 6.0 600 160 180 Unit Vdc Vdc , May, 2004 - Rev. 2 Publication Order Number: 2N5550 /D 2N5550 , 2N5551 ELECTRICAL , 5.0 Vdc) hFE 2N5550 2N5551 2N5550 2N5551 2N5550 2N5551 VCE(sat) Both Types 2N5550 2N5551 VBE(sat) Both


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PDF 2N5550, 2N5551 2N5550 2N5551 2N5550/D 2N55551 2N5551 circuit ALL 2N5551
2N5551

Abstract: 2N5550 2N55551 2N5550G 2N5551G 2N55551ZL1G 2N5551 TO92 to-92 marking 2n5550 2N5551RLRAG 2N5551RLRPG
Text: 2N5550 , 2N5551 ORDERING INFORMATION Package Shipping 2N5550G TO-92 (Pb-Free) 5000 Units , 2N5550 , 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features · These are , Value VCEO Vdc 140 160 2N5550 2N5551 Collector - Base Voltage VCBO 1 EMITTER Vdc 160 180 2N5550 2N5551 Emitter - Base Voltage 2 BASE Unit VEBO 6.0 Vdc , future use and best overall value. 2N5550 , 2N5551 ELECTRICAL CHARACTERISTICS (TA = 25°C unless


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PDF 2N5550, 2N5551 2N5550 2N5551 2N5550 2N55551 2N5550G 2N5551G 2N55551ZL1G 2N5551 TO92 to-92 marking 2n5550 2N5551RLRAG 2N5551RLRPG
2001 - 2N5551 circuit

Abstract: 2N5550 2N5551 2N555 1N914
Text: ON Semiconductort 2N5550 2N5551* Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector­Emitter , , IE = 0 ) V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 2N5551 Emitter­Base Breakdown Voltage (IE , ICBO 2N5550 2N5551 2N5550 2N5551 Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO µAdc , Industries, LLC, 2001 June, 2001 ­ Rev. 1 1 Publication Order Number: 2N5550 /D 2N5550 2N5551


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PDF 2N5550 2N5551* 2N5551 226AA) r14525 2N5550/D 2N5551 circuit 2N5550 2N5551 2N555 1N914
2N5551

Abstract: 2N5550 2N5400 2N5401
Text: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , ST 2N5550 VCEO 140 V ST 2N5551 VCEO 160 V ST 2N5550 VCBO 160 V ST , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 29/04/2004 ST 2N5550 / 2N5551 , - - V V V(BR)EBO at VCE=5V, IC=50mA Max. ST 2N5550 at VCE=5V, IC=10mA Typ. ST 2N5550 ST 2N5551 DC Current Gain at VCE=5V, IC=1mA Min. 6 - - V ST 2N5550


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PDF 2N5550 2N5551 2N5400 2N5401 2N5550 15kHZ 2N5551
2n5551

Abstract: 2N5550 transistor equivalent 2n5551 2N5400 2N5401
Text: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , Unit ST 2N5550 VCEO 140 V ST 2N5551 VCEO 160 V ST 2N5550 VCBO 160 V , /04/2004 ST 2N5550 / 2N5551 Characteristics at Tamb=25 oC Symbol Unit hFE hFE hFE hFE , =50mA Max. ST 2N5550 at VCE=5V, IC=10mA Typ. ST 2N5550 ST 2N5551 DC Current Gain at VCE=5V, IC=1mA Min. 6 - - V ST 2N5550 ST 2N5551 ST 2N5550 ST 2N5551 ST 2N5550 ST


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PDF 2N5550 2N5551 2N5400 2N5401 2N5550 100MHz 2n5551 transistor equivalent 2n5551
2004 - 2N55551

Abstract: 2N5551 2N55551ZL1 2N5551RLRM 2N5551RLRA 2N5551RL1 2N5551G 2N5550RLRPG 2N5550RLRP ALL+2N5551
Text: ,000 Unit / Bulk 2N5550RLRA TO-92 2,000 Tape & Reel 2N5550RLRP TO-92 2,000 Tape & , 2N5550 , 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features · Pb-Free Packages are Available* · Device Marking: Device Type, e.g., 2N5550 , Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector - Emitter , . © Semiconductor Components Industries, LLC, 2004 June, 2004 - Rev. 3 1 Publication Order Number: 2N5550


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PDF 2N5550, 2N5551 2N5550 2N5550/D 2N55551 2N5551 2N55551ZL1 2N5551RLRM 2N5551RLRA 2N5551RL1 2N5551G 2N5550RLRPG 2N5550RLRP ALL+2N5551
2007 - 2N5551G

Abstract: C2N5550 2N5550G 2N55551ZL1 2N5551 2N5551RLRAG 2N5551RL1G 1N914 2N5550 2N5550RLRPG
Text: 2N5550 , 2N5551 ORDERING INFORMATION Package Shipping 2N5550G TO-92 (Pb-Free) 5000 Units , 2N5550 , 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features · These are , Emitter Voltage Value VCEO 2N5550 2N5551 Collector - Base Voltage Vdc 140 160 VCBO 2N5550 2N5551 Emitter - Base Voltage 2 BASE Unit 1 EMITTER Vdc 160 180 VEBO 6.0 , overall value. Publication Order Number: 2N5550 /D 2N5550 , 2N5551 ELECTRICAL CHARACTERISTICS (TA =


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PDF 2N5550, 2N5551 2N5550 2N5550/D 2N5551G C2N5550 2N5550G 2N55551ZL1 2N5551 2N5551RLRAG 2N5551RL1G 1N914 2N5550 2N5550RLRPG
2004 - C2N5550

Abstract: No abstract text available
Text: 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , ST 2N5550 VCEO 140 V ST 2N5551 VCEO 160 V ST 2N5550 VCBO 160 V ST , A IS AVAILABLE mW C C 2N5550 / 2N5551 Characteristics at Tamb=25 oC Symbol DC Current , hFE hFE hFE hFE hFE 60 80 60 80 20 30 - 250 250 - - ST 2N5550 ST 2N5551 V(BR)CEO V(BR)CEO 140 160 - - V V ST 2N5550 V(BR)CBO V(BR)CBO 160 180 -


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PDF 2N5550 2N5551 2N5400 2N5401 2N5550 Emitte50 15kHZ C2N5550
2n5551

Abstract: 2n5550 transistor 2n5551 2N5551 TO92
Text: package. PNP complements: 2N5400 and 2N5401. PINNING PIN 1 2 3 collector base emitter 2N5550 ; 2N5551 , REFERENCE DATA SYMBOL VcBO PARAMETER collector-base voltage 2N5550 2N5551 VCEO CONDITIONS open emitter , collector-emitter voltage 2N5550 2N5551 peak collector current total power dissipation DC current gain ·c m mA mW Ptc hFE 60 80 lc = 10 mA; VC E= 5 V 2N5550 2N5551 Co collector capacitance , 2N5550 ; 2N5551 PARAMETER collector-base voltage 2N5550 2N5551 collector-emitter voltage 2N5550 2N5551


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PDF 2N5400 2N5401. 2N5550; 2N5551 AM279 2N5550 2n5551 transistor 2n5551 2N5551 TO92
2N555

Abstract: 5401 transistor 2N 5551 5551 2N5400 555-1 1000C 2N5401 2N5550 2N5551
Text: 2N5400 2N5401 2N5550 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 THE 2N5400, 2N5401 (PNP) AND 2N5550 , 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL , ) 2N5401 (NPN) 2N5550 (NPN) 2N5551 Collector-Base Voltage vCB0 150 V 160V 160V 180V Collector-Emitter , , Emitter Cutoff Current IEBO 2N5400, 5401 50 nA VEB=3V IC-O 2N5550 , 5551 50 nA VEB=4V IC , =50mA lB=5aA i IC=50mA lB=5mA IC=50mA lB=5mA Base-Emitter Saturation Voltage All types 2N5400, 5401 2N5550


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PDF 2N5400 2N5401 2N5550 2N5551 2N5400, 2N5401 2N5550, O-92A 2N5400 2N555 5401 transistor 2N 5551 5551 555-1 1000C 2N5551
Not Available

Abstract: No abstract text available
Text: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 CASE TO-92A THE 2N5400, 2N5401 (PNP) AND 2N5550 , 2N5551 (NPN) ARE COMPLEMENTARY SILICON , t » a l u « »r« n e q a l.v e ««» (PNP) 2N5401 (NPN) 2N5550 (NPN) 2N5551 , . UNIT i 2N5401, 5551 Emitter Cutoff Current 2N5400, 5401 2N5550 , 5551 MAX TEST CONDITIONS , dB dB Ra=lKA f=10Hz-15KHz TEST CONDITIONS VCE(sat) 2N5400, 5401 2N-5550 2N5551


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PDF 2N5400 2N5550 2N5551 O-92A 2N5400, 2N5401 2N5550,
2007 - 2N5551

Abstract: No abstract text available
Text: 100 200 2N5550 , 2N5551 ORDERING INFORMATION Package Shipping†2N5550G TOâ , 2N5550 , 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are , ˆ’ Emitter Voltage Value VCEO 2N5550 2N5551 Collector − Base Voltage Vdc 140 160 1 EMITTER VCBO Vdc 160 180 2N5550 2N5551 Emitter − Base Voltage 2 BASE Unit VEBO , : 2N5550 /D 2N5550 , 2N5551 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted


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PDF 2N5550, 2N5551 2N5550 2N5550/D 2N5551
2N5551

Abstract: 2N5550 transistor equivalent 2n5551 st 2n5551 st2n5551 transistor 2n5550 2N5401 2N5400 transistor 2n5551 st2n5401
Text: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , Symbol Value Unit Collector Emitter Voltage ST 2N5550 ST 2N5551 VCEO VCEO 140 160 V V Collector Base Voltage ST 2N5550 ST 2N5551 VCBO VCBO 160 180 V V VEBO , company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 10/05/2006 ST 2N5550 , ST 2N5550 V(BR)CBO ST 2N5551 V(BR)CBO at VCE = 5 V, IC = 10 mA Symbol ST 2N5550 V(BR)CEO


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PDF 2N5550 2N5551 2N5400 2N5401 2N5550 2N5551 transistor equivalent 2n5551 st 2n5551 st2n5551 transistor 2n5550 transistor 2n5551 st2n5401
2n5551

Abstract: 2N5550 st 2n5551
Text: issipation Derate above 2 5 X (a 2N5550 2N5551* Sym bol VCEO v CBO v EBO 'c Pd Pd TJ ' T stg 2N5550 140 , a = 100D Cl 0. T a = 100X1 2N5550 2N5551 2N5550 2N5551 lEBO v (BRICEO 2N5550 2N5551 v IBR|CBO 2N5550 , Adc, V çg = 5.0 Vdc) h FE 2N5550 2N5551 2N5550 2N5551 2N5550 2N5551 v CE(sat) Both Types 2N5550 2N5551 v BE(sat) Both Types 2N5550 2N5551 - 1.0 1.2 1.0 - _ - 0.15 0.25 0.20 60 80 60 80 20 30 - - , SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2N5550 , 2N5551 ELECTRICAL CHARACTERISTICS (continued) (Ta = 25


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PDF 2N5550 2N5551* 2N5551 O-226AA) 2N5550, 2N5551 st 2n5551
2006 - 2N5551

Abstract: 2N5551 circuit transistor equivalent 2n5551 2N5550RLRPG 2N5550RLRP 2N5550RLRAG 2N5550RLRA 2N5550 1N914 2N5550G
Text: 2N5550G 2N5550RLRA 2N5550RLRAG 2N5550RLRP 2N5550RLRPG 2N5551 2N5551G 2N5551RL1 Package , 2N5550 , 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features · Pb-Free , Collector - Emitter Voltage Value Unit VCEO 2N5550 2N5551 Collector - Base Voltage 140 160 VCBO 2N5550 2N5551 Emitter - Base Voltage 2 BASE Vdc 1 EMITTER Vdc 160 180 VEBO , . © Semiconductor Components Industries, LLC, 2006 March, 2006 - Rev. 4 1 Publication Order Number: 2N5550


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PDF 2N5550, 2N5551 2N5550 2N5550/D 2N5551 2N5551 circuit transistor equivalent 2n5551 2N5550RLRPG 2N5550RLRP 2N5550RLRAG 2N5550RLRA 2N5550 1N914 2N5550G
1996 - 2N5551

Abstract: 2N5551 circuit motorola 1N914 diode datasheet 1N914 2N5550 2N5551 diodes inc 2N5551 motorola
Text: MOTOROLA Order this document by 2N5550 /D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector ­ Emitter Voltage , ) Collector ­ Base Breakdown Voltage (IC = 100 µAdc, IE = 0 ) V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 , = 100°C) Vdc V(BR)EBO Vdc ICBO 2N5550 2N5551 2N5550 2N5551 Emitter Cutoff Current


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PDF 2N5550/D 2N5550 2N5551* 2N5550 2N5551 2N5550/D* 2N5551 2N5551 circuit motorola 1N914 diode datasheet 1N914 2N5551 diodes inc 2N5551 motorola
2004 - TRANSISTOR 2N5550

Abstract: 2n5551 2N5551 DATA C2N5550 2N5400 2N5401 2N5550 SC-43A
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550 ; 2N5551 NPN high-voltage , Product specification NPN high-voltage transistors 2N5550 ; 2N5551 FEATURES PINNING · Low , .1 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME 2N5550 , - 160 V - 180 V 2N5550 - 140 V 2N5551 - 160 V 2N5550 , Philips Semiconductors Product specification NPN high-voltage transistors 2N5550 ; 2N5551


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PDF M3D186 2N5550; 2N5551 2N5400 2N5401. MAM279 SCA76 R75/04/pp7 TRANSISTOR 2N5550 2n5551 2N5551 DATA C2N5550 2N5401 2N5550 SC-43A
2N5551

Abstract: 2N5550 transistor equivalent 2n5551 st 2n5551 OF 2n5550 2N5551 TO92 2N5400 2N5401 st 25 a hz15
Text: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , Symbol Value Unit Collector Emitter Voltage ST 2N5550 ST 2N5551 VCEO VCEO 140 160 V V Collector Base Voltage ST 2N5550 ST 2N5551 VCBO VCBO 160 180 V V VEBO , company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 10/05/2006 ST 2N5550 , ST 2N5550 V(BR)CBO ST 2N5551 V(BR)CBO at VCE = 5 V, IC = 10 mA Symbol ST 2N5550 V(BR)CEO


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PDF 2N5550 2N5551 2N5400 2N5401 2N5550 2N5551 transistor equivalent 2n5551 st 2n5551 OF 2n5550 2N5551 TO92 st 25 a hz15
2N5551

Abstract: 2N5550 2N555 ic CD4081 pin diagram datasheet 2N5400 2N5401 st 2n5551
Text: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage , ST 2N5550 VCEO 140 V ST 2N5551 VCEO 160 V ST 2N5550 VCBO 160 V ST , ST 2N5550 / 2N5551 Characteristics at Tamb=25 oC Symbol Unit hFE hFE hFE hFE hFE hFE , 2N5550 at VCE=5V, IC=10mA Typ. ST 2N5550 ST 2N5551 DC Current Gain at VCE=5V, IC=1mA Min. 6 - - V ST 2N5550 ST 2N5551 ST 2N5550 ST 2N5551 ST 2N5550 ST 2N5551 Collector


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PDF 2N5550 2N5551 2N5400 2N5401 2N5550 100MHz 2N5551 2N555 ic CD4081 pin diagram datasheet st 2n5551
1996 - 2N5551 diodes inc

Abstract: 2N5551 circuit diodes inc 2N5551 2N5550 2N5550 motorola 1N914 2N5551 2N5551 TO92 2N5551 motorola
Text: MOTOROLA Order this document by 2N5550 /D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector ­ Emitter Voltage , ) Collector ­ Base Breakdown Voltage (IC = 100 µAdc, IE = 0 ) V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 , = 100°C) Vdc V(BR)EBO Vdc ICBO 2N5550 2N5551 2N5550 2N5551 Emitter Cutoff Current


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PDF 2N5550/D 2N5550 2N5551* 2N5550 2N5551 2N5550/D* 2N5551 diodes inc 2N5551 circuit diodes inc 2N5551 2N5550 motorola 1N914 2N5551 2N5551 TO92 2N5551 motorola
2001 - 2N5551 circuit

Abstract: 2N5550 2n5551
Text: ON Semiconductort Amplifier Transistors NPN Silicon 2N5550 2N5551* *ON Semiconductor , VCEO VCBO VEBO IC PD PD TJ, Tstg 2N5550 140 160 6.0 600 625 5.0 1.5 12 ­55 to +150 2N5551 160 180 Unit , %. 2N5550 2N5551 2N5550 2N5551 IEBO V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 2N5551 V(BR)EBO ICBO - - - - , Components Industries, LLC, 2001 81 June, 2001 ­ Rev. 1 Publication Order Number: 2N5550 /D 2N5550 2N5551 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic


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PDF 2N5550 2N5551* 2N5551 226AA) Unit10 2N5551 circuit
2H5551

Abstract: 2Ns551
Text: M AXIM UM RATINGS Rating Sym bol 2N5550 2N5551* 2N5550 140 160 6.0 600 625 5.0 1.5 12 - 55 to , , iE = 0) 0) o, t a = ioo°ci o, t a = ioo°c) v (BR)CEO 2N5550 2N5551 v (BR)CBO 2N5550 2N5551 V(BR)EBO >CBO 2N5550 2N5551 2N5550 2N5551 - - Vdc 140 160 160 180 6.0 Vdc - - - Vdc - , CHARACTERISTICS« 1) Iebo - DC Current Gain ÜC = 1-0 mAdc, V CE = 5.0 Vdc) hFE 2N5550 2N5551 2N5550 2N5551 2N5550 2N5551 v CE(sat) Both Types 2N5550 2N5551 v BE(sat) Both Types 2N5550 2N5551 - - -


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PDF 2N5550 2N5551* 2N5551 O-226AA) 2H5551 2H5551 2Ns551
1997 - transistor equivalent 2n5551

Abstract: diodes inc 2N5551 2N5551 transistor 2n5550 2N5551 diodes inc str 6707 datasheet PO 903 2N5400 2N5401 2N5550
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550 ; 2N5551 NPN high-voltage , 2N5550 ; 2N5551 PINNING FEATURES · Low current (max. 300 mA) PIN · High voltage (max. 160 V). , open emitter - 160 V - 180 V 2N5550 - 140 V 2N5551 - 160 V - 600 mA - 630 mW 2N5550 60 - 2N5551 80 - 2N5550 2N5551 VCEO , specification NPN high-voltage transistors 2N5550 ; 2N5551 LIMITING VALUES In accordance with the


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PDF M3D186 2N5550; 2N5551 2N5400 2N5401. MAM27. SCA54 117047/00/02/pp8 transistor equivalent 2n5551 diodes inc 2N5551 2N5551 transistor 2n5550 2N5551 diodes inc str 6707 datasheet PO 903 2N5401 2N5550
2007 - 2N5551

Abstract: 2N5550 2N5551 circuit TRANSISTORE 10D3 2N5400 2N5401
Text: 2N5550 / 2N5551 2N5550 / 2N5551 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial , gegurtet in Ammo-Pack Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) 2N5550 2N5551 , VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 50 mA 2N5550 hFE hFE hFE 60 60 20 ­ ­ ­ ­ , , IB = 5 mA 1 2N5550 2N5551 2N5550 2N5551 VCEsat VCEsat ­ ­ ­ ­ 0.25 V 0.20 V , Semiconductor AG http://www.diotec.com/ 1 2N5550 / 2N5551 Characteristics (Tj = 25°C) Kennwerte


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PDF 2N5550 2N5551 UL94V-0 2N5550 2N5400 2N5551 2N5551 circuit TRANSISTORE 10D3 2N5401
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