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2N5460 datasheet (47)

Part Manufacturer Description Type PDF
2N5460 Fairchild Semiconductor P-Channel General Purpose Amplifier Original PDF
2N5460 Fairchild Semiconductor P-Channel General Purpose Amplifier Original PDF
2N5460 Fairchild Semiconductor P-Channel General Purpose Amplifier Original PDF
2N5460 InterFET P-Channel silicon junction field-effect transistor Original PDF
2N5460 Motorola CASE 2904, STYLE 7 TO92 (TO226AA) Original PDF
2N5460 On Semiconductor JFET Amplifier P-Channel Original PDF
2N5460 On Semiconductor JFET Amplifier P-Channel - Depletion Original PDF
2N5460 Philips Semiconductors P-Channel JFETS Original PDF
2N5460 Vishay Telefunken TRANS JFET P-CH 5MA 3TO-226AA Original PDF
2N5460 Calogic P-ChanneI JFET Low Noise Amplifier Scan PDF
2N5460 Central Semiconductor FET, P Channel, 0.75 VThreshold Scan PDF
2N5460 Central Semiconductor Low Frequency / Low Noise Amplifiers Scan PDF
2N5460 Intersil Shortform Data Book 1983/4 Scan PDF
2N5460 Intersil Data Book 1981 Scan PDF
2N5460 Motorola The European Selection Data Book 1976 Scan PDF
2N5460 Motorola European Master Selection Guide 1986 Scan PDF
2N5460 Motorola JFET - General Purpose / Amplifiers Scan PDF
2N5460 Others Semiconductor Master Cross Reference Guide Scan PDF
2N5460 Others Semiconductor Reference and Application Handbook 1978 Scan PDF
2N5460 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF

2N5460 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N5460

Abstract: "P-Channel JFETs" transistor 2N5461 P-Channel JFETs 2N5461 Philips MBB 2N5462 CONFIGURATION 2N5461 jfets
Text: 2N5460 /5461/5462 P-channel J-FETs DESCRIPTION P-channel silicon junction field-effect transistor in a , Maximum System (IEC 134) 2N5460 /5461/5462 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ±Vds drain-source , 2N5460 /5461/5462 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS , = 100 °C 1 HA -Idss drain-source leakage current -Vos = 15 V Vgs = 0 2N5460 2N5461 2N5462 1 2 4 5 9 16 mA mA mA Vgs gate-source voltage -Id = 0.1 mA -Vos = 15 V 2N5460 0.5 4 V Vgs gate-source


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PDF 2N5460/5461/5462 LL53131 3TO-92. 2N5460 "P-Channel JFETs" transistor 2N5461 P-Channel JFETs 2N5461 Philips MBB 2N5462 CONFIGURATION 2N5461 jfets
2001 - 2N5460

Abstract: 2N5461 2N5462 jfet 2N5461 transistor 2N5461 equivalent transistor 2N5461
Text: ON Semiconductort 2 DRAIN JFET Amplifiers 2N5460 2N5461 2N5462 3 GATE P­Channel - , 2N5460 , 2N5461, 2N5462 - - 5.0 nAdc 2N5460 , 2N5461, 2N5462 - - 1.0 µAdc , Vdc, VDS = 0, TA = 100°C) 2N5460 , 2N5461, 2N5462 IGSS Gate­Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 µAdc) 2N5460 2N5461 2N5462 Gate­Source Voltage (VDS = 15 Vdc, ID = 0.1 mAdc) (VDS = 15 Vdc, ID = 0.2 mAdc) (VDS = 15 Vdc, ID = 0.4 mAdc) 2N5460 2N5461 2N5462 © Semiconductor


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PDF 2N5460 2N5461 2N5462 226AA) 2N5460, 2N5461, r14525 2N5460/D 2N5460 2N5461 2N5462 jfet 2N5461 transistor 2N5461 equivalent transistor 2N5461
2N5460

Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification P-channel junction FETs 2N5460 ; 2N5461 , 3 source April 1995 822 Preliminary specification Philips Semiconductors 2N5460 , temperature. April 1995 823 Preliminary specification Philips Semiconductors 2N5460 /5461/5462 , 1 CONDITIONS PARAMETER gate-source leakage current pA mA mA mA V 2N5460 2N5461 , V gate-source cut-off voltage - I d = 1 pA -V DS = 15 V 2N5460 2N5461 2N5462 0.75 1


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PDF 2N5460; 2N5461; 2N5462 2N5460/5461/5462 2N5460 2N5461 2N5460
2001 - 2N5461

Abstract: 2N5462 2N5460
Text: ON Semiconductort JFET Amplifiers P­Channel - Depletion 2N5460 2N5461 2N5462 MAXIMUM , Components Industries, LLC, 2001 1 March, 2001 ­ Rev. 1 Publication Order Number: 2N5460 /D 2N5460 2N5461 2N5462 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic , ) V(BR)GSS 2N5460 , 2N5461, 2N5462 IGSS 2N5460 , 2N5461, 2N5462 2N5460 , 2N5461, 2N5462 2N5460 2N5461 2N5462 2N5460 2N5461 2N5462 VGS(off) - - 0.75 1.0 1.8 0.5 0.8 1.5 - - - - - - - - 5.0 1.0 6.0


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PDF 2N5460 2N5461 2N5462 226AA) 2N5460/D r14525 2N5462
2N5460

Abstract: 2N5481 2N5461 2N5463 2N5465 2n5462 equivalent 2N5462 2N5464 equivalent CONFIGURATION 2N5461 2N5464
Text: " , 0 ^ A dc. , OS - 0 TEST CONDITIONS 2N5460 , 2N5461, 2N5462 2N5463, 2N5464, 2N5465 2N5460 , 2N5461, 2N5462i " 2N5460. 2N5463, 2N5460 , 2N5463, 2N 5463 2N5464 2N5465 2N5461, 2N5464, 2N 5461, 2N5464 , D lfÜ Ü H ID U 2N5460 - 2N5465 P-Channel JFET PIN CONFIGURATION TO-92 S D G , 60 60 Vdc Vdc mAdc mW m W /°C bC "C U N IT S ORDERING INFORMATION TO-92 2N5460 2N5461 2N5462 2N5463 2N5464 2N5465 WAFER 2N5460 /W 2N5481/W 2N5462/W 2N5463/W 2N5464/W 2N5465/W DICE ' 2N5460 /D 2N5461/D


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PDF 2N5460 2N5465 5503B 2N5461 2N5462 2N5463 2N5464 2N5460/W 2N5481 equivalent 2N5462 2N5464 equivalent CONFIGURATION 2N5461
P-Channel JFETs

Abstract: 2N5460 "P-Channel JFETs"
Text: Tem ic - _ 2N5460 /5461/5462 P-Channel JFETs Product Summary P a rt N um ber 2N5460 2N5461 2N5462 VGS(off) (V) 0.75 to 6 1 to 7.5 1.8 to 9 V(BR)GSS M in (V) 40 40 40 gii, M , Switching · Ultrabigh Input Impedance Pre-Amplifiers Description The 2N5460 /5461/5462 are p-channel , 2N5460 /5461/5462 Specifications3 L im its 2N5460 P a ra m e te r S tatic Gate-Source Breakdown Voltage , |xs duty cycle s2 % . PSCIB 9-24 P-37410-Rev. B (07/04/94) Tem ic Siliconix 2N5460


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PDF 2N5460/5461/5462 2N5460 2N5461 2N5462 2N5460/5461/5462 O-226AA plastic5462 P-37410--Rev. P-Channel JFETs "P-Channel JFETs"
2001 - 2N5462

Abstract: 2N5460 2n5461 transistor 2N5461 equivalent 2N5462
Text: ON Semiconductort 2N5460 2N5461 2N5462 2 DRAIN JFET Amplifiers P­Channel - Depletion , 40 - - Vdc 2N5460 , 2N5461, 2N5462 - - 5.0 nAdc 2N5460 , 2N5461, 2N5462 , , ID = 0.4 mAdc) 2N5460 , 2N5461, 2N5462 IGSS 2N5460 2N5461 2N5462 VGS(off) VGS 2N5460 , 1.0 kHz) 2N5460 2N5461 2N5462 IDSS ­1.0 ­2.0 ­4.0 - - - ­5.0 ­9.0 ­16 mAdc 2N5460 2N5461 2N5462 yfs 1000 1500 2000 - - - 4000 5000 6000 mmhos


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PDF 2N5460 2N5461 2N5462 226AA) 2N5460 r14525 2N5460/D 2N5462 2n5461 transistor 2N5461 equivalent 2N5462
2N5460

Abstract: No abstract text available
Text: Philips Components Data sheet status Preliminary specification date of issue 2N5460 /5461 , .1 Symbol. 249 ^ 53 ^ 31 003SaAT 013 Preliminary specification Philips Com ponents 2N5460 , Preliminary specification P-channel J -F E T s 2N5460 /546175462 CHARACTERISTICS Tamb = 25 °C unless , . * MAX. UNIT 5 nA 1 VGS = 20 V Vps = 0 HA mA mA mA V 2N5460 2N5461 2N5462 2N5460 1 2 4 0.5 5 9 16 4 - I d = 0.2 mA -V os = 15 V 2N5461 0.8 4.5 V


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PDF 2N5460/5461/5462 aTO-92 MBB163 003SaAT 2N5461 2N5462 tt53T31 003SST3 2N5460
2001 - 2N5460

Abstract: 7-segment+4+digit+5461
Text: qualification data Product 2N5460 2N5460_D27Z 2N5460_D74Z 2N5460_D75Z 2N5460_L99Z back to top © 2007 Fairchild , ) 2N5460_D27Z Full Production N/A TO-92 3 TAPE REEL 2N5460_D74Z Full Production N/A TO-92 3 AMMO 2N5460_D75Z Full Production N/A TO-92 3 AMMO &3 (3-Digit Date Code) Line 2: 2N Line 3: 5460 2N5460_L99Z Lifetime Buy N/A TO-92 3 BULK Line , °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5460-5462 350 2.8 125 357


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PDF 2N5460 MMBF5460 MMBF5461 MMBF5462 2N5461 2N5462 7-segment+4+digit+5461
2N5460

Abstract: 2N5462 N5460 2n5461
Text: 2N5460 thru 2N5462* CASE 29-04, STYLE 7 TO-92 (TO-226AA) MAXIMUM RATINGS Rating Drain-G ate , A = 1 0 0 X ) 2N5460 , 2N5461, 2N5462 2N5460 , 2N5461, 2N5462 - - 5.0 1.0 nAdc fxAôc Vdc - - Gate So urce Cutoff Voltage (V q s = 15 V d c, Id = 1 .0 /iA d c) v G S Io ff) 2N5460 2N5461 2N5462 VGS 2N5460 2N5461 2 N 5462 0.5 0.8 1.5 - - 0.75 1.0 1.8 - - - 6.0 7.5 9.0 , = 15 V d c ' v g s = o. - 'D S S 2N5460 2N5461 2N5462 - 1 .0 - 2.0 - 4 .0 - - m Adc - 5


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PDF 2N5460 2N5462* O-226AA) 2N5462 N5460 2n5461
2N5462

Abstract: 2N5460
Text: MICDNDUCTQR tm MMBF5460 MMBF5461 2N5460 2N5461 2N5462 SOT-23 ' S Mark: 6 E /6 , 2N5460 625 5.0 83.3 *MMBF5460 350 2.8 200 357 mW mW/°C °C/W °C/W 2N5460 , 9.0 4.0 4.5 6.0 2N5460 2N5461 2N5462 - 1.0 - 2.0 -4.0 - 5.0 - 9.0 - 16 mA mA mA , VG = 20 V, VD = 0, TA = 100°C S S VD = 15 V, lD= 1.0 pA S 2N5460 2N5461 2N5462 VD = 15 V, lD= 0.1 mA 2N5460 S VD = 15 V, lD= 0.2 mA 2N5461 S VD = 15 V, lD= 0.4 mA 2N5462 S nA fa V V


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PDF MMBF5460 MMBF5461 2N5460 2N5461 2N5462 OT-23 2N5460 2N5461 2N5462 MMBF5460
2001 - 2n5461

Abstract: 2n5462 equivalent 2N5462 2N5460
Text: TJ Tstg 3 GATE 1 SOURCE 2N5460 2N5461 2N5462 Value 40 40 10 350 2.8 ­65 to +135 ­65 to , Vdc, ID = 0.2 mAdc) (VDS = 15 Vdc, ID = 0.4 mAdc) V(BR)GSS 2N5460 , 2N5461, 2N5462 IGSS 2N5460 , 2N5461, 2N5462 2N5460 , 2N5461, 2N5462 2N5460 2N5461 2N5462 2N5460 2N5461 2N5462 VGS(off) - - 0.75 1.0 1.8 0.5 , Order Number: 2N5460 /D 2N5460 2N5461 2N5462 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise , (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 2N5460 2N5461 2N5462 IDSS ­1.0 ­2.0 ­4.0 - - - ­5.0 ­9.0 ­16


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PDF 2N5460 2N5461 2N5462 226AA) 2n5462 equivalent 2N5462
2N5460

Abstract: 2N5460 MOTOROLA 2N5461 MOTOROLA 2N5462
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5460 /D J F E T A m p lifiers P-Channel - Depletion 2 DRAIN 2N5460 thru 2N5462 MAXIMUM RATINGS Rating D rain-G ate Voltage , = 30 Vdc. VDS (V q s = 20 Vdc, V q s (VGS = 30 Vdc, V DS V(BR)GSS 2N5460 , 2N5461, 2N5462 'GSS = = = = 0) °) 0, TA = 100°C) 0, TA = 100°C) 2N5460 , 2N5461, 2N5462 2N5460 , 2N5461, 2N5462 2N5460 2N5461 2N5462 2N5460 2N5461 2N5462 - - 0.75 1.0 1.8 0.5 0.8 1.5 - - - - - - - - 5.0 1.0 6.0 7.5 9.0


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PDF 2N5460/D 2N5460 2N5462 10RAdc, 2N5460 MOTOROLA 2N5461 MOTOROLA 2N5462
2N5463

Abstract: 2N5463 MOTOROLA 2N5465 2N5460 2N5465 MOTOROLA 2N5464 2N5460 MOTOROLA 2N5464 equivalent 2N5461 MOTOROLA
Text: MOT OR OL A SC XSTRS/R F 13E D | b3h7S54 GOflbbM? 3 | 2N5460 thru 2N5465 CASE 29-04, STYLE 7 TO-92 (TO-226AA) M A X I M U M R A T IN G S 2N5460 2N5461 2NS462 40 40 10 310 ·2,82 - 6 5 to , , V q s (Vq s = 30 Vdc, V q s V{BR)G SS 2N5460 , 2N5461, 2N 5462 2N5463, 2N5464, 2N5465 2N5460 , 2N5463, 2N5460 , 2N5463, 2N5461, 2N5464, 2N5461, 2N5464, 2N 5462 2N5465 2N5462 2N5465 VGS(off) 2N5460 , 2N5463 2N5461, 2N5464 2N5462, 2N5465 Vq s 2N5460 , 2N5463 2N5461


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PDF b3h7S54 2N5460 2N5465 O-226AA) 2N5460 2N5461 2NS462 2N5463 2N5464 2N5465 2N5463 MOTOROLA 2N5465 MOTOROLA 2N5460 MOTOROLA 2N5464 equivalent 2N5461 MOTOROLA
2006 - 2N5462

Abstract: 2N5460 2N5461 2N5461G 2N5460G 2N5461RLRA 2N5461RLRAG 2N5462G
Text: 0, f = 100 Hz, BW = 1.0 Hz) ORDERING INFORMATION Device 2N5460 2N5460G 2N5461 2N5461G , 2N5460 , 2N5461, 2N5462 JFET Amplifier P-Channel - Depletion Features · Pb-Free Packages are , , 2006 March, 2006 - Rev. 5 1 Publication Order Number: 2N5460 /D 2N5460 , 2N5461, 2N5462 , - Vdc 2N5460 , 2N5461, 2N5462 - - 5.0 nAdc 2N5460 , 2N5461, 2N5462 - - , , TA = 100°C) (VGS = 30 Vdc, VDS = 0, TA = 100°C) V(BR)GSS 2N5460 , 2N5461, 2N5462 IGSS Gate


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PDF 2N5460, 2N5461, 2N5462 2N5460/D 2N5462 2N5460 2N5461 2N5461G 2N5460G 2N5461RLRA 2N5461RLRAG 2N5462G
n5460

Abstract: 2N5460 N5462 P-Channel JFETs 2n5462 2N5461 CONFIGURATION 2N5461 Philips MBB
Text: 1990 VllOSEti DDbflCHl b'Ji ■PHIN 2N5460 /5461/5462 P-channel J-FETs DESCRIPTION P-channel , Semiconductors ■7110flEb 00b60^3 Mb 6 ■PHIN Preliminary specification P-channel J-FETs 2N5460 /5461/5462 , drain-source leakage current -VDS = 15 V VGs = 0 2N5460 2N5461 2N5462 1 2 4 5 9 16 mA mA mA Vgs gate-source voltage -Id = 0.1 mA -Vds = 15 V 2N5460 0.5 4 V Vgs gate-source voltage -Id = 0.2 mA -Vos = 15 V 2N5461 , cut-off voltage -id = 1 ha -Vos = 15 V 2N5460 2N5461 2N5462 0.75 1 1.8 6 7.5 9 V V V ly-fsl transfer


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PDF 2N5460/5461/5462 7110fl2ti N5460/5461/5462 2N5460 2N5461 N5462 2N5462 n5460 P-Channel JFETs CONFIGURATION 2N5461 Philips MBB
2n5461

Abstract: 2N5462 2N5461 equivalent 2N5460 Low noise audio amplifier MMBF5460 mmbf5461
Text: 2N5460 / 2N5461 I 2N5462 I MMBF5460 I MMBF5461 National S e m i c o n d u c t o r " Discrete POW ER & Signa l Technologies 2N5460 2N5461 2N5462 MMBF5460 MMBF5461 SOT-23 Mark: 6E /61U , °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5460 625 5.0 83.3 200 , 0.06 " bSGii3D ocmoRbß mo 7-47 2N5460 / 2N5461 / 2N5462 / MMBF5460 / MMBF5461 P-Channel , Gate-Source Voltage VD s = 15 V, lD = 0.1 mA VD s = 15 V, lD = 0.2 mA VD S = 15 V, Id = 0.4 mA 2N5460


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PDF 2N5460 2N5461 2N5462 MMBF5460 MMBF5461 2N5462 2N5461 equivalent Low noise audio amplifier mmbf5461
1997 - 2N5461 MOTOROLA

Abstract: 2N5460 MOTOROLA 2N5460 2n5462 2N5461
Text: MOTOROLA Order this document by 2N5460 /D SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers P­Channel - Depletion 2N5460 thru 2N5462 2 DRAIN 3 GATE 1 SOURCE MAXIMUM RATINGS Rating , ) Characteristic Symbol Min Typ Max Unit V(BR)GSS 40 - - Vdc 2N5460 , 2N5461, 2N5462 - - 5.0 nAdc 2N5460 , 2N5461, 2N5462 - - 1.0 µAdc 0.75 1.0 1.8 , 100°C) 2N5460 , 2N5461, 2N5462 IGSS Gate ­ Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 µAdc


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PDF 2N5460/D 2N5460 2N5462 226AA) 2N5461 MOTOROLA 2N5460 MOTOROLA 2N5460 2n5462 2N5461
2N5460

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5460 /D JF E T A m p lifie rs , Voltage (V d s = 15 Vdc, I q = 1.0 nAdc) 2N5460 , 2N 5461, 2N5462 Ig s s 2N5460 , 2N 5461, 2N5462 2N5460 , 2N 5461, 2N5462 - - - - 5.0 1.0 nAdc HAdc V(BR)GSS 40 - - Vdc 2N5460 2N5461 2N5462 v GS(off , 0.1 mAdc) (V d s = 15 Vdc, I q = 0.2 mAdc) (V d s = 15 Vdc, I q = 0.4 mAdc) V GS 2N5460 2N5461 , Current (V DS = 15 Vdc, V GS = 0, f = 1.0 kHz) 2N5460 2N5461 2N5462 Id s s - 1 .0 - 2 .0 - 4 .0 - -


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PDF 2N5460/D O-226AA) 2N5460
2N5465

Abstract: 2N5460 2N5460-2N5465 SST5461
Text: C Q IO Q IC CORPORATION P-Channel JFET Low Noise Amplifier 2N5460- 2N5465/ SST5460- SST5465 ABSOLUTE MAXIMUM RATINGS (T a = 25°C unless otherwise specified) Drain-Gate or Source-Gate Voltage 2N5460 , +135°C MARK soo SOI S02 P/N SST5463 SST5464 SST5465 MARK S 03 S04 S05 2N5460-65 Plastic TO , 8-13 2N5460- 2N5465/ SST5460 - SST5465 C O ÌC X fiC CORPORATION V ELECTRICAL CHARACTERISTICS (Continued) (Ta = 25°C unless otherwise specified) SYMBOL PARAMETER 2N5460 , 2N5463 9*9 MIN


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PDF 2N5460- 2N5465/ SST5460- SST5465 2N5460 2N5462 2N5463 2N5465 310mW 2N5465 2N5460-2N5465 SST5461
2004 - 2N54XX

Abstract: 2N5461RLRA 2N5462 2N5461 2N5460 2N5460G 2N5460 equivalent
Text: 2N5460 2N5460G For information on tape and reel specifications, including part orientation and tape , 2N5460 , 2N5461, 2N5462 JFET Amplifier P-Channel - Depletion Features · Pb-Free Packages are , Industries, LLC, 2004 May, 2004 - Rev. 4 1 Publication Order Number: 2N5460 /D 2N5460 , 2N5461 , Typ Max Unit V(BR)GSS 40 - - Vdc 2N5460 , 2N5461, 2N5462 - - 5.0 nAdc 2N5460 , 2N5461, 2N5462 - - 1.0 mAdc 0.75 1.0 1.8 - - - 6.0 7.5 9.0


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PDF 2N5460, 2N5461, 2N5462 2N5460/D 2N54XX 2N5461RLRA 2N5462 2N5461 2N5460 2N5460G 2N5460 equivalent
2N5463

Abstract: 2N5465 2N5464 2N5460 2N5461 2N5462 2n5463-5
Text: °C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMIT UNITS 2N5460-2 2N5463-5 , SILICONIX INC iliconix ¡ncarparated IflE D ■0254735 Q013ÖS0 Ö 2N5460 SERIES P-Channel JFETs The 2N5460 Series are low cost p-channel JFETs designed to provide all-around performance in a wide , ) (V) (mS) (mA) 2N5460 6 40 1 -5 2N5461 7.5 40 1.5 -9 2N5462 9 40 2 -16 2N5463 6 60 1 -5 2N5464 7.5 60 , ICminer.com Electronic-Library Service CopyRight 2003 SILICONIX INC 2N5460 SERIES îac D ÔSSM73S QG13ÖS1 T


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PDF 2N5460 300ms 2N5463 2N5465 2N5464 2N5461 2N5462 2n5463-5
2001 - 2N5461

Abstract: 5461 AS MMBF5462 61V
Text: °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5460-5462 350 2.8 125 357 , 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462 2N5460 2N5461 2N5462 MMBF5460 MMBF5461 , " X 0.06." 2001 Fairchild Semiconductor Corporation 2N5460 /5461/5462/MMBF5460/5461/5462, Rev A 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462 P-Channel General Purpose Amplifier (continued , % 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462 P-Channel General Purpose Amplifier (continued


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PDF 2N5460 MMBF5460 MMBF5461 MMBF5462 2N5461 2N5462 5461 AS MMBF5462 61V
2001 - Not Available

Abstract: No abstract text available
Text: RθJA Thermal Resistance, Junction to Ambient Max Units 2N5460-5462 350 2.8 125 , " X 0.06." ©2001 Fairchild Semiconductor Corporation 2N5460 /5461/5462/MMBF5460/5461/5462, Rev A 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462 MMBF5460 MMBF5461 MMBF5462 2N5460 2N5461 , % 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462 P-Channel General Purpose Amplifier 5 , . Temperature 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462 P-Channel General Purpose Amplifier


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PDF OT-23
1995 - 2N5460

Abstract: 2N5461 2N5462
Text: 2N5460 /5461/5462 Siliconix PChannel JFETs Product Summary Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N5460 0.75 to 6 40 1 -1 2N5461 , 2N5460 /5461/5462 are pchannel JFETs designed to provide allaround performance in a wide range of , . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C 1 2N5460 /5461/5462 Siliconix Specificationsa Limits 2N5460 2N5461 2N5462 Symbol Test


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PDF 2N5460/5461/5462 2N5460 2N5461 2N5462 2N5460/5461/5462 P-37410--Rev. 2N5460 2N5461 2N5462
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