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2003 - 2n5457 pin out

Abstract: 2N5457 2N5458 2N5457 datasheet 2N5458 equivalent TA 5458 semiconductor 2n5457
Text: 2N5457, 2N5458 Preferred Device JFETs - General Purpose N- Channel - Depletion N-Channel , 2N5457 TO-92 5000 Units/Box 2N5458 TO-92 5000 Units/Box Preferred devices are , , 2003 February, 2003 - Rev. 4 1 Publication Order Number: 2N5457/D 2N5457, 2N5458 , 2N5458 Gate-Source Voltage (VDS = 15 Vdc, iD = 100 mAdc) (VDS = 15 Vdc, iD = 200 mAdc) 2N5457 2N5458 Vdc ON CHARACTERISTICS Zero-Gate-V oltage Drain Current (Note 1) (VDS = 15 Vdc, VGS = 0


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PDF 2N5457, 2N5458 2N5457/D 2n5457 pin out 2N5457 2N5458 2N5457 datasheet 2N5458 equivalent TA 5458 semiconductor 2n5457
1998 - 2N5457

Abstract: 2N5458 2N5459 2N5458 equivalent 2N5457 datasheet transistor 2N5457 2N5459 common drain fairchild 2n5458 equivalent 2N5459 MMBF5457
Text: MMBF5457 MMBF5458 MMBF5459 2N5457 2N5458 2N5459 G D G S TO-92 S SOT , *MMBF5457 350 2.8 200 357 mW mW/°C °C/W °C/W 2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 , -15 V, VDS = 0, TA = 100°C VDS = 15 V, ID = 10 nA 2N5457 2N5458 2N5459 VDS = 15 V, ID = 100 µA 2N5457 VDS = 15 V, ID = 200 µA 2N5458 VDS = 15 V, ID = 400 µA 2N5459 - 25 V - 1.0 - 200 - 6.0 , CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, VGS = 0 2N5457 2N5458 2N5459 1.0


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PDF MMBF5457 MMBF5458 MMBF5459 2N5457 2N5458 2N5459 OT-23 2N5457 2N5458 2N5459 2N5458 equivalent 2N5457 datasheet transistor 2N5457 2N5459 common drain fairchild 2n5458 equivalent 2N5459 MMBF5457
2N5457

Abstract: No abstract text available
Text: M lC O N D U C T O R tm MMBF5457 MMBF5458 MMBF5459 2N5457 2N5458 2N5459 * TO , orporation 2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 Discrete POWER & Signal , = 100°C VD = 15 V, lD= 10 nA S 2N5457 2N5458 2N5459 VD = 15 V, lD= 100 |iA 2N5457 S VD = 15 V, lD= 200 |_rA 2N5458 S VD = 15 V, lD= 400 nA 2N5459 S - 25 V - 1.0 - 200 - 6.0 - 7.0 , Voltage Drain Current* VD = 15 V, VG = 0 S S 2N5457 2N5458 2N5459 1.0 2.0 4.0 SMALL


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PDF MMBF5457 MMBF5458 MMBF5459 2N5457 2N5458 2N5459 OT-23 deviBF5459 2N5457 2N5458
2001 - 2n5458

Abstract: 2N5457 application note 2N5457 2N5638 2N5639
Text: 2N5457, 2N5458 2N5457 and 2N5458 are Preferred Devices JFETs - General Purpose N­Channel ­ , Device Package Shipping 2N5457 TO­92 5000 Units/Box 2N5458 TO­92 5000 Units/Box , 2N5457, 2N5458 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol , °C) Gate­Source Cutoff Voltage (VDS = 15 Vdc, iD = 1 nAdc) 2N5457 2N5458 Gate­Source Voltage (VDS = 15 Vdc, iD = 100 µAdc) (VDS = 15 Vdc, iD = 200 µAdc) 2N5457 2N5458 ON CHARACTERISTICS


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PDF 2N5457, 2N5458 2N5457 2N5458 r14525 2N5457/D 2N5457 application note 2N5638 2N5639
2006 - 2N545x

Abstract: 2N5457 2n5457 pin out 2N5458G 2N5457G 2N5458
Text: 2N5457, 2N5458 Preferred Device JFETs - General Purpose N-Channel - Depletion N-Channel , 2N5457G 2N5458 2N5458G Package Shipping TO-92 1000 Units/Box TO-92 (Pb-Free) 1000 , Publication Order Number: 2N5457/D 2N5457, 2N5458 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise , Cutoff Voltage (VDS = 15 Vdc, iD = 10 nAdc) 2N5457 2N5458 Gate-Source Voltage (VDS = 15 Vdc, iD = 100 mAdc) (VDS = 15 Vdc, iD = 200 mAdc) VGS(off) 2N5457 2N5458 VGS ON


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PDF 2N5457, 2N5458 2N5457/D 2N545x 2N5457 2n5457 pin out 2N5458G 2N5457G 2N5458
2010 - 2n5457

Abstract: No abstract text available
Text: 2N5457, 2N5458 JFETs - General Purpose N−Channel − Depletion N−Channel Junction Field , Device 2N5457 2N5457G 2N5458 2N5458G Package Shipping TO−92 1000 Units/Box TOâ , , LLC, 2010 February, 2010 − Rev. 6 1 Publication Order Number: 2N5457/D 2N5457, 2N5458 , Voltage (VDS = 15 Vdc, iD = 10 nAdc) 2N5457 2N5458 Gate−Source Voltage (VDS = 15 Vdc, iD = 100 mAdc) (VDS = 15 Vdc, iD = 200 mAdc) 2N5457 2N5458 VGS(off) VGS ON CHARACTERISTICS 2N5457


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PDF 2N5457, 2N5458 2N5457/D 2n5457
2010 - 2n5457 pin out

Abstract: 2n5458 2N5458 equivalent 2N5457 2N5457G transistor 2N5457 2N5458G 2N545x
Text: 2N5457, 2N5458 JFETs - General Purpose N-Channel - Depletion N-Channel Junction Field Effect , location) ORDERING INFORMATION Device 2N5457 2N5457G 2N5458 2N5458G Package Shipping TO , : 2N5457/D 2N5457, 2N5458 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol , ) 2N5457 2N5458 Gate-Source Voltage (VDS = 15 Vdc, iD = 100 mAdc) (VDS = 15 Vdc, iD = 200 mAdc) 2N5457 2N5458 VGS(off) VGS ON CHARACTERISTICS 2N5457 2N5458 IDSS 1.0 2.0 3.0 6.0


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PDF 2N5457, 2N5458 2N5457/D 2n5457 pin out 2n5458 2N5458 equivalent 2N5457 2N5457G transistor 2N5457 2N5458G 2N545x
2N5458 NATIONAL SEMICONDUCTOR

Abstract: 2N5457 2N5459 2n5458
Text: 2N5457 I 2N5458 I 2N5459 I MMBF5457 I MMBF5458 / MMBF5459 e? National Semiconductor Discrete POWER & Signal Technologies 2N5457 2N5458 2N5459 MMBF5457 MMBF5458 MMBF5459 SOT-23 Mark , mounted on FR-4 PCB 1.6" X 1.6" X 0.06 " bSOHBD OOHCHbM STS 7-43 2N5457 / 2N5458 / 2N5459 , 100°C VDs = 15 V, lD = 10 nA 2N5457 2N5458 2N5459 VDS = 15V, Id = 100 pA 2N5457 VDS = 15 V, lD = 200 nA 2N5458 Vns = 15 V, lo = 400u A 2N54S9 -0.5 -1.0 -2.0 -2.5 -3.5 -4.5 ON CHARACTERISTICS Idss


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PDF 2N5457 2N5458 2N5459 MMBF5457 MMBF5458 MMBF5459 2N5459 2N5458 NATIONAL SEMICONDUCTOR
JFET 2N5457

Abstract: 2n5459 2N5457-2N5459 2n5457 2n5458
Text: -92 2N5457 2N5458 2N5459 ELECTRICAL CHARACTERISTICS S ym bol BV qss lo s s Param eter Gate-Source , (off) Gate-Source Cutoff Vortage 2N5457 2N5458 2N5459 VDS = 15V , Id = 10nA VGs Gate-Source Voltage 2N5457 2N5458 2N5459 V d s = 15V, Iq = 100fiA Vos = 15V. ID = 200/*A V V d , te l) 2N5457 2N5458 2N5459 1.0 2.0 4.0 5.0 9.0 16 5000 5500 6000 50 7.0 3.0 3.0 p8 mA lyfsl Forward Transfer Admittance 2N5457 2N5458 2N5459 VDs = 15V .VGs = 0 , f = 1 k H z 1000


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PDF 2N5457-2N5459 2N5457- 2N5459 10sec) 310mW 630ms, JFET 2N5457 2n5459 2N5457-2N5459 2n5457 2n5458
2N5457-2N5459

Abstract: 2N5458 2N5459 2N5457 2N5457-59 X2N5457-59
Text: °C Vgs(o«) Gate-Source Cutoff Voltage 2N5457 -0.5 -6.0 V Vds = 15V, Id = 10nA 2N5458 -1.0 -7.0 , 200^A, Typical Vos = 15V, Id = 400nA, Typical 2N5458 3.5 2N5459 4.5 Idss Zero-Gate-Voltage Drain Current (Note 1) 2N5457 1.0 50 mA Vds = 15V, Vgs = 0 2N5458 2.0 90 2N5459 4.0 16 IVfsl Forward Transfer Admittance 2N5457 1000 5000 us Vds = 15V, Vgs = 0,f = 1kHz 2N5458 1500 5500


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PDF 2N5457-2N5459 10sec) 310mW 82mW/Â 2N5457 2N5458 2N5459 2N5457-2N5459 2N5457-59 X2N5457-59
2N545B

Abstract: 2N5457 2N5457-2N5459 2N5459 2N5458
Text: TO-92 2N5457 2N5458 2N5459 ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise specified , -200 Vqs(oH) Gate-Source Cutoff Voltage 2N5457 Vds = 15V, lD=10nA -o.s -6.0 V 2N5458 -1.0 -7.0 , =400/IA V 2N5458 2N5459 'dss Zero-Gate-Voltage Drain Current (Note 1) 2N5457 Vds = 15V,VGS = 0 1.0 5.0 mA 2N5458 2.0 9.0 2N5459 4.0 16 lytsl Forward Transfer Admittance 2N5457


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PDF 2N5457-2N5459 10sec) 310mW 630ms, 2N545B 2N5457 2N5457-2N5459 2N5459 2N5458
2N5458

Abstract: JFET 2N5457 2N5457-2N5459
Text: ) Gate-Source Cutoff Voltage 2N5458 2N5459 2N5457 V gs Gate-Source Voltage 2N5458 2N5459 loss Zero-Gate-Voltage Drain Current (Note 1) 2N5457 2N5458 2N5459 2N5457 ly is l MIN -25 M AX -1.0 -200 UNITS V nA , Admittance Input Capacitance (Note 2) 2N5458 2N5459 I yos I Ciss Crss Reverse Transfer Capacitance


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PDF 2N5457-2N5459 310mW 200jiA, 2N5458 2N5459 630ms, JFET 2N5457 2N5457-2N5459
1998 - 2N5459

Abstract: 2N5457 2N5457-59 equivalent JFET 2N5457 2N5458 2N5457 datasheet 2N5458 equivalent equivalent 2N5459 2N5457-59 transistor jfet 2N5457
Text: ) Reverse Transfer Capacitance (Note 2) Noise Figure (Note 2) 2N5457 2N5458 2N5459 2N5457 2N5458 2N5459 2N5457 2N5458 2N5459 2N5457 2N5458 2N5459 NOTES: 1. Pulse test required. PW 630ms, duty


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PDF 2N5457 2N5459 -65oC 150oC -55oC 135oC 10sec) 300oC 310mW 2N5458 2N5459 2N5457 2N5457-59 equivalent JFET 2N5457 2N5458 2N5457 datasheet 2N5458 equivalent equivalent 2N5459 2N5457-59 transistor jfet 2N5457
2n5458

Abstract: 2N545 2N5457 2N5459 MMBF5457 MMBF5459
Text: 2N5458 - 1.0 - 7.0 V 2N5459 - 2.0 - 8.0 V Vgs Gate-Source Voltage Vds = 15 V, lD = 100 |iA 2N5457 - 2.5 V Vds = 15 V, lD = 200 |iA 2N5458 - 3.5 V Vds = 15 V, lD = 400 |iA 2N5459 - 4.5 V , 2N5458 2.0 6.0 9.0 mA 2N5459 4.0 9.0 16 mA SMALL SIGNAL CHARACTERISTICS gts Forward Transfer Conductance* VDS = 15 V, VGS = 0, f = 1.0 kHz 2N5457 2N5458 2N5459 1000 1500 2000 5000 5500 6000 |imhos


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PDF 2N5457 MMBF5457 2N545Ã MMBF545Ã 2N5459 MMBF5459 OT-23 6D/61S/6L 100mV- 2n5458 2N545 MMBF5457 MMBF5459
N5458

Abstract: N5457 2NS457 2N5458 MMBF5459 MMBF5458 MMBF5457 2N5459 2N5457 2N5459 common drain
Text: ) Gate-Source Cutoff Voltage Vos = 15 V, lD = 10 nA 2N5457 -0.5 -6.0 V 2N5458 - 1.0 -7.0 V 2N5459 , jiA 2N5458 -3.5 V Vp? = 15 V, Iq = 400 |xA 2N54S9 -4.5 V ON CHARACTERISTICS Idss Zero-Gate Voltage Drain Current* VOS = 15V,VQS = 0 2NS457 1.0 3.0 5.0 mA 2N5458 2.0 6.0 9.0 mA 2N5459 4.0 , kHz 2N5457 2N5458 2N5459 1000 1500 2000 5000 5500 6000 timhos nmhos umhos gos Output Conductance


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PDF N5457 N5458 2N5459 MMBF5457 MMBF5458 MMBF5459 OT-23 6D/61S/6L VM-15V) OT-23 2NS457 2N5458 MMBF5459 2N5459 2N5457 2N5459 common drain
J201 Replacement

Abstract: 2N6658 1280A JFET 2N3323 2N4119 PN4304 PN4303 2N6568 2n4416 jfet
Text: 1.0 - 6.0 25 1.0 5.0 1000 5000 7 3.0 1M _ NRL 2N5458 N 92 1.0 - 7.0 25 2.0 9.0 1500 5500 7 3.0 , JFET 2N4220 104M N JFET 2N5458 ® 1325A N JFET 2N4222 105M N JFET 2 N 5459 Q> CC 1714A N JFET


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PDF 2N3821 2N3822 2N4220 2N4221 2N4222 2N5457 2N4867A 2N4868 2N4868A 2N4869 J201 Replacement 2N6658 1280A JFET 2N3323 2N4119 PN4304 PN4303 2N6568 2n4416 jfet
MPF111

Abstract: 2N5459 MOTOROLA 2N3436 2N4220 MOTOROLA 2N4221 motorola 2N5363 2n5556 2n5358 2N5360 2N4222 motorola
Text: MOTOROLA SC -CDIODES/OPTOJ ¥ 4 D E | b B b 7 a S S 3fl03b 6367255 MOTOROLA SC 1 '7^-2'J-tsr' die n o . 2C4220 LINE SOURCE - DFM131 This die provides performance equal to or better than that of the following device types: 2N3436 2N3437 2N343B 2N3821 2N3822 2N4220 2N4221 2N4222.A 2N5358 2NS359 2N5360 2N5361 2N5362 2N5363 2N5364 2N5457 2N5458 2N5459 2N5556 2N5SS7 2N5SS8


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PDF 3fl03b 2C4220 DFM131 2N3436 2N3437 2N343B 2N3821 2N3822 2N4220 2N4221 MPF111 2N5459 MOTOROLA 2N4220 MOTOROLA 2N4221 motorola 2N5363 2n5556 2n5358 2N5360 2N4222 motorola
2N2608

Abstract: 2N2609 PN4360
Text: 9.0 DSG TO-92 2N5458 1.5 50 7.0 3.0 25 1.0 7.0 2.0 TO-92 2N5459


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PDF 2N4220 2N4221 2N4222 2N4338 2N5461 2N5462 PN4360 2N2608 2N2609 PN4360
2002 - 5458

Abstract: TA 5458 fairchild 2n5458
Text: 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 2N5457 2N5458 2N5459 MMBF5457 MMBF5458 MMBF5459 G G S TO-92 D S Mark: 6D / 61S / 6L SOT-23 D NOTE: Source & Drain are interchangeable N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* Symbol VDG VGS IGF TJ, Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TA =


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PDF 2N5457 MMBF5457 2N5458 2N5459 MMBF5458 MMBF5459 OT-23 5458 TA 5458 fairchild 2n5458
1997 - 5459

Abstract: No abstract text available
Text: / 5459 MMBF5457 MMBF5458 MMBF5459 2N5457 2N5458 2N5459 (continued) Electrical


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PDF OT-23 5459
2000 - MC68HC908AB16A

Abstract: MPQ2369 MC68HC908AB16 79 pin connector MC68HC908AB32 2N5458 MC3302 MC68HC08AB16A MC68HC908AB32FU q221
Text: R37 C C 2 1 LVDD 3 Q18 2N5458 D D X VEE Z Y 7 4 15 , C 1 2 9 A 74AC14 U6C 3 6 Q16 2N5458 9 D 9 74AC04 U9D D , 5 Q23-2 7 2 1 LVDD 2 1 LVDD 3 Q21 2N5458 3 Q19 2N5458 G G , -1 MPQ2369 2 C22 Q20 2N5458 F 2 1 2 Rev A 1 2 3 4 1 2 3 4 A


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PDF M68EML08AB32UM/D M68EML08AB32 MC68HC908AB16A MPQ2369 MC68HC908AB16 79 pin connector MC68HC908AB32 2N5458 MC3302 MC68HC08AB16A MC68HC908AB32FU q221
2000 - MC68HC908AB16A

Abstract: MC68HC908AB16 2N5458 motorola U12C MC3302 MC68HC908AB32FU Q2426 MC68HC908AB32 MC68HC08AB16A Q223
Text: R37 C C 2 1 LVDD 3 Q18 2N5458 D D X VEE Z Y 7 4 15 , C 1 2 9 A 74AC14 U6C 3 6 Q16 2N5458 9 D 9 74AC04 U9D D , 5 Q23-2 7 2 1 LVDD 2 1 LVDD 3 Q21 2N5458 3 Q19 2N5458 G G , -1 MPQ2369 2 C22 Q20 2N5458 F 2 1 2 Rev A 1 2 3 4 1 2 3 4 A


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PDF M68EML08AB32UM/D M68EML08AB32 MC68HC908AB16A MC68HC908AB16 2N5458 motorola U12C MC3302 MC68HC908AB32FU Q2426 MC68HC908AB32 MC68HC08AB16A Q223
1997 - TA 5458

Abstract: 5458 2N5457-5459 MMBF5458 MMBF5457 2N5459 2N5458 2N5457 equivalent 2N5459 5458 transistor
Text: MMBF5457 MMBF5458 MMBF5459 2N5457 2N5458 2N5459 (continued) Electrical Characteristics


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PDF OT-23 TA 5458 5458 2N5457-5459 MMBF5458 MMBF5457 2N5459 2N5458 2N5457 equivalent 2N5459 5458 transistor
2N5717

Abstract: 2n4303 2N5359 2N5716
Text: 2N5362 2N5363 2N5364 2N5457 2N5458 2N5459 2N5556 2N5557 2N5558 2N5716 2N5717 2N5718 1308 J309 J310 KK3684


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PDF O-18/TO-1Q6 2N5717 2n4303 2N5359 2N5716
PN4340

Abstract: No abstract text available
Text: 10.0 5.0 30.0 40.0 2N5457 2N5458 2N5459 2N5484 2N5485 2N5486 TO-92 TO-92 TO-92 TO


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PDF M3G2271 2N3684 2N3685 2N3686 2N3687 2N4117 2N4117A 2N4118 2N4118A 2N4119 PN4340
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