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    Solid State Devices Inc (SSDI)
    2N5415 TRANS PNP 200V 1A TO39
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    Microchip Technology Inc
    2N5415UA PNP TRANSISTORS
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    onsemi
    2N5415 TRANS PNP 200V 0.1A TO39
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    Microchip Technology Inc
    2N5415 PNP TRANSISTORS
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    STMicroelectronics
    2N5415 TRANS PNP 200V 1A TO39
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    Microchip Technology Inc
    2N5415U4 POWER BJT
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    Microchip Technology Inc
    2N5415UAC POWER BJT
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    Microchip Technology Inc
    JANS2N5415 TRANS PNP 200V 1A TO5
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    Microchip Technology Inc
    JAN2N5415U4 TRANS PNP 200V 50UA U4
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    Microchip Technology Inc
    JANS2N5415S TRANS PNP 200V 50UA TO39
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    Microchip Technology Inc
    JANTXV2N5415 TRANS PNP 200V 1A TO5
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    Microchip Technology Inc
    JANKCB2N5415 TRANS PNP 200V 1A TO5
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    Microchip Technology Inc
    JANHCB2N5415 BJT TRANSISTOR
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    Microchip Technology Inc
    JANS2N5415UA TRANS PNP 200V 1A TO-5
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    Microchip Technology Inc JANS2N5415UA $416.05 $416.05 $416.05 $416.05 $416.05 Buy Now
    Microchip Technology Inc
    JANS2N5415UA/TR TRANSISTOR POWER BJT
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    Central Semiconductor Corp
    2N5415 Bipolar Transistor Small Signal PNP High Voltage 200V 1A 3-Pin TO-39 Through Hole Box - Boxed Product (Development Kits) (Alt: 2N5415)
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    VPT Components
    JANS2N5415 JANS2N5415 - Bulk (Alt: JANS2N5415)
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    VPT Components
    JAN2N5415S JAN2N5415S - Bulk (Alt: JAN2N5415S)
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    VPT Components
    JAN2N5415U4 - Bulk (Alt: JAN2N5415U4)
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    VPT Components
    JANTX2N5415 JANTX2N5415 - Bulk (Alt: JANTX2N5415)
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    VPT Components
    JANTXV2N5415 JANTXV2N5415 - Bulk (Alt: JANTXV2N5415)
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    VPT Components
    JANS2N5415UA Low Power Transistor PNP Surface Mount UA - Bulk (Alt: JANS2N5415UA)
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    VPT Components
    JANTX2N5415S JANTX2N5415S - Bulk (Alt: JANTX2N5415S)
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    VPT Components
    JANS2N5415U4 - Bulk (Alt: JANS2N5415U4)
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    Microchip Technology Inc
    JANS2N5415U4 Trans GP BJT PNP 200V 1A 3-Pin SMD Tray - Trays (Alt: JANS2N5415U4)
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    Microchip Technology Inc JANS2N5415U4 $746.76 $746.76 $746.76 $746.76 $746.76 Buy Now
    Central Semiconductor Corp
    2N5415 PBFREE Transistor GP BJT PNP 200V 1A 3-Pin TO-39 Box - Boxed Product (Development Kits) (Alt: 2N5415 PBFREE)
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    VPT Components
    JANTXV2N5415UA JANTXV2N5415UA - Bulk (Alt: JANTXV2N5415UA)
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    SPC Multicomp
    2N5415 Bipolar Transistor, Pnp, -200V, To-39; Transistor Polarity:Pnp; Collector Emitter Voltage Max:200V; Continuous Collector Current:1A; Power Dissipation:10W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:-; Msl:- Rohs Compliant: Yes |Multicomp Pro 2N5415
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    Microchip Technology Inc
    JAN2N5415S Power Bjt To-39 Rohs Compliant: Yes |Microchip JAN2N5415S
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    Microchip Technology Inc
    JANTX2N5415S Power Bjt To-39 Rohs Compliant: Yes |Microchip JANTX2N5415S
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    Microchip Technology Inc
    JANTX2N5415 Power Bjt To-5 Rohs Compliant: Yes |Microchip JANTX2N5415
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    Microchip Technology Inc
    JANTXV2N5415UA Power Bjt Ua Rohs Compliant: Yes |Microchip JANTXV2N5415UA
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    Newark JANTXV2N5415UA Bulk 50 $229.58 $229.58 $213.18 $204.98 $204.98 Buy Now
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    Microchip Technology Inc
    2N5415S Power Bjt To-39 Rohs Compliant: Yes |Microchip 2N5415S
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    Microchip Technology Inc
    JANTX2N5415UA Power Bjt Ua Rohs Compliant: Yes |Microchip JANTX2N5415UA
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    Newark JANTX2N5415UA Bulk 50 $197.55 $197.55 $183.44 $176.38 $176.38 Buy Now
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    Microchip Technology Inc
    JAN2N5415
    Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
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    Microchip Technology Inc
    JANTX2N5415P
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    Microchip Technology Inc
    JANTXV2N5415S
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    Microchip Technology Inc
    JAN2N5415UA
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    Motorola Mobility LLC
    JAN2N5415S
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    Microsemi Corporation
    JAN2N5415S
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    Microsemi Corporation
    JANTX2N5415
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    STMicroelectronics
    2N5415S
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    Microsemi Corporation
    JX2N5415
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    Continental Device India Ltd
    2N5415 Transistor: PNP; bipolar; 200V; 1A; 1/10W; TO39
    Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
    TME Electronic Components 2N5415 193 1 $0.805 $0.483 $0.384 $0.345 $0.345 Buy Now
    Microchip Technology Inc
    JANS2N5415S-LOT CHARGE Power BJT
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    Microchip Technology Inc
    JANS2N5415S-LC Power BJT
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    Microchip Technology Inc
    JANTXV2N5415U4-LC Power BJT
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    Microchip Technology Inc
    JAN2N5415UA-LC Power BJT
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    Microchip Technology Inc
    JANTX2N5415U4-LC Power BJT
    Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
    NAC JANTX2N5415U4-LC 4 Weeks, 2 Days 1 - - - - - Get Quote

    2N5415 datasheet (69)

    Part ECAD Model Manufacturer Description Type PDF
    2N5415 Central Semiconductor Small Signal Transistors Original PDF
    2N5415 Continental Device India PNP SILICON HIGH VOLTAGE TRANSISTOR Original PDF
    2N5415 Microsemi PNP Transistor Original PDF
    2N5415 Philips Semiconductors PNP high-voltage transistors - Pol=PNP / Pkg=TO39 / Vceo=200 / Ic=1 / Hfe=30-150 / fT(Hz)=15M / Pwr(W)=10 Original PDF
    2N5415 Philips Semiconductors Small-signal Transistors Original PDF
    2N5415 Siemens Cross Reference Guide 1998 Original PDF
    2N5415 STMicroelectronics SILICON PNP TRANSISTORS - Pol=PNP / Pkg=TO39 / Vceo=200 / Ic=1 / Hfe=30-150 / fT(Hz)=15M / Pwr(W)=10 Original PDF
    2N5415 STMicroelectronics SILICON PNP TRANSISTORS HIGH VOLTAGE - Pol=PNP / Pkg=TO39 / Vceo=200 / Ic=1 / Hfe=30-150 / fT(Hz)=15M / Pwr(W)=10 Original PDF
    2N5415 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5415 Boca Semiconductor HIGH VOLTAGE AMPLIFIERS - Pol=PNP / Pkg=TO39 / Vceo=200 / Ic=1 / Hfe=30-150 / fT(Hz)=15M / Pwr(W)=10 Scan PDF
    2N5415 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N5415 Diode Transistor Transistor Short Form Data Scan PDF
    2N5415 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5415 General Electric High-voltage silicon P-N-P planar transistor. - Pol=PNP / Pkg=TO39 / Vceo=200 / Ic=1 / Hfe=30-150 / fT(Hz)=15M / Pwr(W)=10 Scan PDF
    2N5415 General Transistor Power Transistor Selection Guide Scan PDF
    2N5415 High Voltage Semi-Conductor Specialists Silicon PNP Power Transistors Scan PDF
    2N5415 High Voltage Semi-Conductor Specialists Silicon PNP - Power Transistors Scan PDF
    2N5415 Motorola European Master Selection Guide 1986 Scan PDF
    2N5415 Others Transistor Shortform Datasheet & Cross References Scan PDF
    2N5415 Others Basic Transistor and Cross Reference Specification Scan PDF

    2N5415 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags
    2002 - 2N5416

    Abstract: 2N5415 2N5416 PACKAGE 2N5416S transistor 2N5415 2N5415S
    Text: Qualified Level 2N5415 2N5415S JAN JANTX JANTXV 2N5416 2N5416S MAXIMUM RATINGS Ratings , Total Power Dissipation @ TA = +250C @ TC = +250C Operating & Storage Temperature Range 2N5415 , 1.0 0.75 10 -65 to +200 PT Top, Tstg TO- 5* 2N5415 , 2N5416 THERMAL CHARACTERISTICS , 2) Derate linearly 57.1 mW/0C for TC > +250C Max. 17.5 Unit C/W 0 2N5415S , 2N5416S , 175 Vdc VCB = 280 Vdc Collector-Base Cutoff Current VCB = 200 Vdc VCB = 350 Vdc 2N5415 2N5415


    Original
    PDF MIL-PRF-19500/485 2N5415 2N5415S 2N5416 2N5416S 2N5415, 2N5416 2N5415 2N5416 PACKAGE 2N5416S transistor 2N5415 2N5415S
    1997 - 2N5416

    Abstract: 2N5415 2N5416 PACKAGE BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N5415 ; 2N5416 PNP high-voltage , 2N5415 ; 2N5416 PINNING FEATURES · Low current (max. 200 mA) PIN · High voltage (max. 300 V). , 2N5415 - -200 V 2N5416 - -300 V - 400 mA - 1 W 2N5415 30 150 2N5416 30 120 15 - 2N5415 2N5416 VCEO collector-emitter voltage open , high-voltage transistors 2N5415 ; 2N5416 LIMITING VALUES In accordance with the Absolute Maximum Rating


    Original
    PDF M3D111 2N5415; 2N5416 MAM334 SCA54 117047/00/02/pp8 2N5416 2N5415 2N5416 PACKAGE BP317
    2013 - 2N5415

    Abstract: No abstract text available
    Text: 2N5415 2N5416 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5415 and 2N5416 are silicon PNP transistors designed for consumer and , 2N5415 200 2N5416 350 UNITS V 200 300 V VEBO IC 4.0 6.0 V 1.0 A , CHARACTERISTICS: (TA=25°C) TEST CONDITIONS VCB=175V VCB=280V 2N5415 MIN MAX 50 2N5416 MIN MAX - , 120 R1 (21-November 2013) 2N5415 2N5416 SILICON PNP TRANSISTORS TO-39 CASE - MECHANICAL


    Original
    PDF 2N5415 2N5416 2N5415 21-November
    2N5416 RCA

    Abstract: 2NS416 2N5416 RCA-2N5415 50C11 2N3440 rca 2N5415 RCA transistors 2n3440 2N541 2N5415 RCA
    Text: G E SOLID STATE ; High-Voltage Power Transistors. 2N5415 , 2N5416 01 Dlf|3fl7S0âl □DlTlhfl , Equipment Features: 92CS'2'512 ■2N5415 : p-n-p complement of 2N344CT 2NS416: p-n-p complement of 2N3439 , (2NS416) /ceo = -300 V max. (2N5416) -200 V max. ( 2N5415 ) The RCA- 2N5415 and 2N5416" are silicon p-n-p , regulators. The 2N5415 and 2N5416 are supplied in the JEDEC TO-205AD package. ■Formerly RCA Dev. Types , RATINGS, Absolute-Maximum Values: 2N5415 2N5416 * Vcoo


    OCR Scan
    PDF 2N5415, 2N5416 T-37W7 2N5415: 2N344CT 2NS416: 2N3439" O-205AD 2NS416) 2N5416) 2N5416 RCA 2NS416 2N5416 RCA-2N5415 50C11 2N3440 rca 2N5415 RCA transistors 2n3440 2N541 2N5415 RCA
    1995 - 2N5415

    Abstract: 2N5416
    Text: 2N5415 2N5416 HIGH VOLTAGE PNP SILICON TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N5415 , 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO , Valu e Unit 2N5415 2N5416 V CBO Collector-Base Voltage (I E = 0) -200 -350 V , -65 to 200 o C 200 o C 1/4 2N5415 /2N5416 THERMAL DATA R thj -ca se R thj- amb , I EBO Emitter Cut- off Current (I C = 0) for 2N5415 for 2N5416 VEB = -4 V VEB = -6 V


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    PDF 2N5415 2N5416 2N5415, 2N5416 2N5415
    2N5416

    Abstract: 2N5415
    Text: Qualified Level 2N5415 2N5415S JAN JANTX JANTXV 2N5416 2N5416S MAXIMUM RATINGS Ratings , Total Power Dissipation @ TA = +250C @ TC = +250C Operating & Storage Temperature Range 2N5415 , 1.0 0.75 10 -65 to +200 PT Top, Tstg TO- 5* 2N5415 , 2N5416 THERMAL CHARACTERISTICS , 2) Derate linearly 57.1 mW/0C for TC > +250C Max. 17.5 Unit C/W 0 2N5415S , 2N5416S , VCB = 175 Vdc VCB = 280 Vdc Collector-Base Cutoff Current VCB = 200 Vdc VCB = 350 Vdc 2N5415


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    PDF MIL-PRF-19500/ 2N5415 2N5415S 2N5416 2N5416S 2N5415, 2N5416 2N5415
    1999 - 2N5416

    Abstract: 2n5415 transistor 2N5415
    Text: TECHNICAL DATA 2N5415 JAN, JTX, JTXV 2N5416 JAN, JTX, JTXV MIL-PRF QPL DEVICES , @ TA = +250C @ TC = +250C Operating & Storage Junction Temperature Range Symbol 2N5415 , 50 1.0 µAdc mAdc µAdc mAdc IEBO 20 µAdc 2N5415 2N5416 ICEX 50 50 µAdc µAdc 2N5415 2N5416 ICBO1 50 50 µAdc 2N5415 ICBO2 500 500 µAdc OFF , Collector-Base Cutoff Current VCB = 200 Vdc 2N5415 2N5416 6 Lake Street, Lawrence, MA 01841


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    PDF 2N5415 2N5416 MIL-PRF-19500/485 2N5415 2N5416 transistor 2N5415
    2N3440

    Abstract: 2N3439 MJ5415 2N5415 MJ5416 2N5416 transistor 2n3439 Transistor 2n3440 AN-415 2N3M
    Text: MAXIMUM RATINGS PNP NPN Rating Symbol 2N5415 2N5416 2N3439 2N3440 Unit Collector-Emitter , -65 to +200 °c THERMAL CHARACTERISTICS NPN PNP 2N3439 2N5415 2N3440 2N5416 3 Collector 3 , Boca Semiconductor Corp. 3 Characteristic Symbol 2N5415 2N5416 2N3439 2N3440 Unit Thermal Resistance , Unit | OFF CHARACTERISTICS Collector-Emitter Sustaining VoItage(1) dC = 50 mAdc, lB = 0) 2N5415 , ) 2N5415 2N5416 2N3439 2N3440 ICBO — 50 50 20 20 fjAdc Emitter Cutoff Current (Veb = 4.0 Vdc, Ic = 0


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    PDF 2N5415 2N5416 2N3439 2N3440 2N5415 2N5416 Oto50V, MJ5415 MJ5416 transistor 2n3439 Transistor 2n3440 AN-415 2N3M
    2008 - transistor 2N5415

    Abstract: 2N5415 ic tc 4066 diagram
    Text: 1611580 Feature: · PNP transistors. Description: The 2N5415 are high voltage silicon , Ratings Parameter Symbol Value Unit 2N5415 Collector-Base Voltage (IE = 0) VCBO , = 0) 2N5415 Collector Cut-off Current (IB = 0) Symbol VCB = -175V Minimum Typical , Current (IC = 0) 2N5415 IEBO - - -20 Collector-Emitter Sustaining Voltage 2N5415 , DC Current Gain 2N5415 hFE* 30 - 150 - Small Signal Current Gain IC = -5mA


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    PDF 2N5415 2N5415 transistor 2N5415 ic tc 4066 diagram
    2004 - 2N5415

    Abstract: No abstract text available
    Text: 2N5415 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. = 2N5415 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N5415 at our online store! 2N5415 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N5415 Information Did you Know , Request a Quote Test Houses 2N5415 Specifications Military/High-Rel : N V(BR)CEO (V) : 200 V(BR)CBO (V


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    PDF 2N5415 2N5415 STV3208 LM3909N LM3909
    2000 - 2N5415

    Abstract: 2N5416 pnp 2N5415 transistor 2N5415 2n541
    Text: 2N5415 2N5416 ® SILICON PNP TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTORS DESCRIPTION The 2N5415 , 2N5416 are high voltage silicon epitaxial planar PNP , Parameter Value 2N5415 Unit 2N5416 V CBO Collector-Base Voltage (I E = 0) -200 -350 V , P tot T stg -4 A 10 W 1 -65 to 200 W o C 1/4 2N5415 / 2N5416 THERMAL , (I B = 0) V CE = -150 V I EBO Emitter Cut-off Current (I C = 0) for 2N5415 for 2N5416


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    PDF 2N5415 2N5416 2N5415, 2N5416 2N5415 pnp 2N5415 transistor 2N5415 2n541
    2000 - 2N5415

    Abstract: 2N5416 2n5416 st
    Text: 2N5415 2N5416 ® SILICON PNP TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTORS DESCRIPTION The 2N5415 , 2N5416 are high voltage silicon epitaxial planar PNP , Parameter Value Uni t 2N5415 2N5416 V CBO Collector-Base Voltage (IE = 0) -200 -350 , -0.5 o December 2000 -4 A 10 W 1 W -65 to 200 o C 1/4 2N5415 , Current (I B = 0) V CE = -150 V I EBO Emitter Cut-off Current (I C = 0) for 2N5415 for


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    PDF 2N5415 2N5416 2N5415, 2N5416 2N5415 2n5416 st
    2013 - 2N5415

    Abstract: 2N5416U4
    Text: (surface mount) 2N5415U4 – 2N5416U4 UA package (surface mount) 2N5415UA – 2N5416UA MAXIMUM , 2N5415 – 2N5416 Qualified Levels: JAN, JANTX, JANTXV and JANS PNP Silicon Low-Power Transistor Compliant Qualified per MIL-PRF-19500/485 DESCRIPTION This family of 2N5415 and 2N5416 , 2N5415 through 2N5416 series • JAN, JANTX, JANTXV, and JANS qualifications are available per , compliant Also available in: TO-205AD (TO-39) package (short-leaded) 2N5415S – 2N5416S


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    PDF 2N5415 2N5416 MIL-PRF-19500/485 2N5415 2N5416 MIL-PRF-19500/485. O-205r 2N5416U4
    2N5415

    Abstract: 2N5416
    Text: N AMER PHILIPS/DISCRETE bTE T> ■bbiBiai D0Sfll70 444 2N5415 2N5416 IAPX SILICON P-N-P , D.C. current gain —IC = 50 mA;-VCE = 10 V 2N5415 2N5416 -vCB0 max. 200 350 V -vCEO max. 200 , Respective Manufacturer N AMER PHILIPS/DISCRETE 2N5415 2 N 5416 bTE D bbS3«ì31 002Ö171 3ûG IAPX RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) 2N5415 2N5416 , transistors bTE D ■bbS3T31 DGeaiTE 217 2N5415 2N5416 IAPX I CHARACTERISTICS Tease = 25 °C unless


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    PDF D0Sfll70 2N5415 2N5416 2N5416
    2N5416

    Abstract: 2n5415
    Text: package. PINNING PIN 1 2 3 emitter base 2N5415 ; 2N5416 DESCRIPTION collector, connected to case QUICK REFERENCE DATA SYMBOL V CBO PARAMETER collector-base voltage 2N5415 2N5416 open emitter , VcEO collector-emitter voltage 2N5415 2N5416 peak collector current total power dissipation DC current gain 2N5415 2N5416 transition frequency !c m Ptot IT -n m mA W 30 30 -50 mA; VCE = -10 , Absolute Maximum Rating System (IEC 134). SYMBOL V CBO 2N5415 ; 2N5416 PARAMETER collector-base


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    PDF 2N5415; 2N5416 2N5415 2N5416
    2000 - 2N5415

    Abstract: No abstract text available
    Text: 2N5415 2N5416 ® SILICON PNP TRANSISTORS I I STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTORS DESCRIPTION The 2N5415 , 2N5416 are high voltage silicon epitaxial planar PNP , Parameter Value 2N5415 Unit 2N5416 V CBO Collector-Base Voltage (I E = 0) -200 -350 V , Temperature -6 -1 P tot T stg -4 A 10 W 1 -65 to 200 W o C 1/4 2N5415 , (I B = 0) V CE = -150 V I EBO Emitter Cut-off Current (I C = 0) for 2N5415 for 2N5416


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    PDF 2N5415 2N5416 2N5415, 2N5416 2N5415
    2N5416 harris

    Abstract: 2N5416 2N5416 RCA 2N5415
    Text: Power Transistors, T-33-1-7 File Number 2N5415 , 2N5416 HARRIS SEMICOND SECTOR 27E D 336 , u s tria l and C o m m e rc ia l E q u ip m e n t F e a tu re * 2N5415 : p -n -p com plem ent o f , ratings: V'cso = -3 5 0 V max (2N5416) V'ceo = -3 0 0 V max. (2N5416) - 2 0 0 V max. ( 2N5415 ) C(CASE) 92C S -2Ï5 1 2 JEDEC TO` 205AD The 2N5415 and 2N5416* are s ilicon p-n -p transistors w ith high , series regulators. The 2N5415 and 2N5416 are supplied in the JEDEC TO 205AD package. Formerly RCA Dev


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    PDF T-33-1-7 2N5415, 2N5416 M3Q2271 2N5415: 2N344CT 2N5416: 2N343ST 2N5416) 2N5416 harris 2N5416 RCA 2N5415
    2N5416

    Abstract: 2N5415 P008B pnp transistors
    Text: 2N5415 2N5416 ® SILICON PNP TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTORS DESCRIPTION The 2N5415 , 2N5416 are high voltage silicon epitaxial planar PNP , Parameter Value 2N5415 Unit 2N5416 V CBO Collector-Base Voltage (I E = 0) -200 -350 V , stg -4 A 10 W 1 -65 to 200 W o C 1/4 2N5415 / 2N5416 THERMAL DATA R , ) V CE = -150 V I EBO Emitter Cut-off Current (I C = 0) for 2N5415 for 2N5416 VEB = -4 V


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    PDF 2N5415 2N5416 2N5415, 2N5416 Collecto-50 2N5415 P008B pnp transistors
    1997 - transistor 2N5415

    Abstract: 2N5416 2N5415
    Text: 2N5415 2N5416 SILICON PNP TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES PNP TRANSISTOR DESCRIPTION The 2N5415 , 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO , -39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N5415 , 2N5415 / 2N5416 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal , 2N5415 for 2N5416 V EB = -4 V V EB = -6 V Collector-Emitter Sustaining Voltage I C = -50 mA


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    PDF 2N5415 2N5416 2N5415, 2N5416 transistor 2N5415 2N5415
    2002 - 2N5415

    Abstract: No abstract text available
    Text: Prelim. 02/00 Search Results Part number search for devices beginning " 2N5415-JQR " Semelab Home Datasheets are downloaded as Acrobat PDF files. Bipolar Products PRODUCT 2N5415-JQR-B Polarity PNP , 2N5415CSM4 2N5416CSM4 MECHANICAL DATA Dimensions in mm (inches) 5.59 ± 0.13 (0.22 ± 0.005) 0.25 , stated 2N5415 -200V -200V -4V 2N5416 -350V -300V -6V Collector ­ Base Voltage (IE=0) Collector ­ , 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 02/00 2N5415CSM4


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    PDF 2N5415CSM4 2N5416CSM4 2N5415 2N5416 2N5416 300ms, 2N5415-JQR" 2N5415-JQR-B 10/50m 15MHz
    2010 - 2N5415

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N5415CSM4 2N5416CSM4 · · · Silicon Planar PNP Transistor , (TA = 25°C unless otherwise stated) 2N5415 VCBO VCEO VEBO IC IB PD TJ Tstg Collector ­ Base Voltage , EPITAXIAL PNP TRANSISTOR 2N5415CSM4 , 2N5416CSM4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise , -50mA IB = 0 VCB = -175V VCB = -280V VEB = -4V VEB = -6V IC = -50mA IC = -50mA IC = -50mA 2N5415 2N5416 2N5416 VCE = -150V 2N5415 2N5416 2N5415 2N5416 IB = -5mA VCE = -10V 2N5415 Min. -200 -300 -350 Typ


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    PDF 2N5415CSM4 2N5416CSM4 2N5415 -200V 2N5416 -350V -300V 2N5415CSM4,
    2N3440 MOTOROLA

    Abstract: 2N5416 motorola 2n3439 motorola 2N3439 2N5415 MOTOROLA 2N3440 2N5415 2N6410 motorola 2n5416 transistor 2n3439
    Text: Adt NPN 2N3439 2N3440 3 Collector PNP 2N5415 2N5416 1 Em itter 1.0 5.7 6.0 28.6 - 6 6 to , ICEO 2N3439 2N3440 ICEX 2N3439 2N3440 ic a o 0) 0) 0) 0) 2N5415 2N6410 2 N 3439 2 N3440 Ie b o 2N5415 , NPN / 2N5415 , 2N5416 PNP ELECTRtCAL CHARACTERISTICS (continued) (Ta 3 1 C hirac! »riatic , PF | 2N3439, 2N3440 2N5416, 2N5416, 2N3439, 2N3440 300 2N5415 , 2NB41Q Re(h|e) Ohms F o r PNP t « t c ir c u it , ravers« a ll p o la ritie s . PNP 2N5415 , 2N5416 FIGURE 2 - TURN-ON


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    PDF 2NC41B 2N5416 2N3439 2N3440 2N3440 2N5415 2N5416 O-205AD) 2N3439, 2N3440 MOTOROLA 2N5416 motorola 2n3439 motorola 2N5415 MOTOROLA 2N6410 motorola 2n5416 transistor 2n3439
    1996 - 2n5416

    Abstract: 2N5415 pnp 2N5415
    Text: 2N5415 2N5416 HIGH VOLTAGE PNP SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N5415 , 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal , Tj Parameter 2N5415 Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base , 2N5415 /2N5416 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance , for 2N5415 for 2N5416 V CE = -150 V for 2N5415 for 2N5416 I C = -50 mA I C = -10 mA for 2N5415 for


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    PDF 2N5415 2N5416 2N5415, 2N5416 pnp 2N5415
    2013 - 2N5415

    Abstract: No abstract text available
    Text: 2N5415 2N5416 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5415 and 2N5416 are silicon PNP transistors designed for consumer and , 2N5415 200 2N5416 350 UNITS V 200 300 V VEBO IC 4.0 6.0 V 1.0 A , =10V, IC=5.0mA, f=1.0kHz fT Cob VCE=10V, IC=10mA, f=5.0MHz VCB=10V, IE=0, f=1.0MHz 2N5415 MIN , ) 2N5415 2N5416 SILICON PNP TRANSISTORS TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2


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    PDF 2N5415 2N5416 2N5415 16-December
    2N5416 RCA

    Abstract: RCA-2N5415 2n5415 2N3439 RCA 2N5415 RCA
    Text: -37-a File Number 2N5415 , 2N5416 336 Silicon P-N-P High-Voltage Planar Transistors For H ig h -S p , quipm ent Feature«: 2N5415 : p-n-p complement o f 2N3440' 2N5416: p-n-p complement o f 2N343& Maximum , 0 Vmax. ( 2N5415 ) t e r m in a ld e s ig n a t io n s m c s -m s « JEDEC TO-205AD The RCA- 2N5415 and 2N5416^ are silicon p-n-p transistors with high breakdown voltages, high frequency , highvoltage, low-current switching and series regulators. The 2N5415 and 2N5416 are supplied in the JEDEC


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    PDF T-37-a 2N5415, 2N5416 2N5415: 2N3440' 2N5416: 2N343& 2NS416) 2N5415) 2N5416 RCA RCA-2N5415 2n5415 2N3439 RCA 2N5415 RCA
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