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2N5336 datasheet (41)

Part Manufacturer Description Type PDF
2N5336 Central Semiconductor Small Signal Transistors Original PDF
2N5336 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=5 / Hfe=30-120 / fT(Hz)=30M / Pwr(W)=6 Original PDF
2N5336 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
2N5336 API Electronics TRANSISTOR,BJT,NPN,100V V(BR)CEO,5A I(C),TO-39 Scan PDF
2N5336 API Electronics Short form transistor data Scan PDF
2N5336 API Electronics Short form transistor data Scan PDF
2N5336 Crimson Semiconductor Transistor Selection Guide Scan PDF
2N5336 Diode Transistor NPN Transistor Selection Guide Scan PDF
2N5336 Diode Transistor Transistor Short Form Data Scan PDF
2N5336 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N5336 General Semiconductor Low Frequency Transistors Scan PDF
2N5336 General Transistor Power Transistor Selection Guide Scan PDF
2N5336 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2N5336 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N5336 Others Silicon NPN Transistor Scan PDF
2N5336 Others Semiconductor Master Cross Reference Guide Scan PDF
2N5336 Others Shortform Transistor Datasheet Guide Scan PDF
2N5336 Others Vintage Transistor Datasheets Scan PDF
2N5336 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N5336 Others Basic Transistor and Cross Reference Specification Scan PDF

2N5336 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2n5339

Abstract: No abstract text available
Text: RATINGS Symbol 2N5336 2N5337 V cEO Collector-Base Voltage VcB Emitter-Base Voltage Veb , MOTOROLA sc XSTRS/R F 1EE D | b3b?aS4 0064543 3 | 2N5336 thru 2N5339 T" 3 3 - , Collector-Emitter Sustaining Voltage* (I q = 50 mAdc, Ig = 0) Vdc VCEOIsusl* 2N5336 , 2N5337 2N5338,2N5339 , 2N5336 ,2N5337 2N5338,2N5339 Collector Cutoff Current (V c e ” 75 Vdc, VEBIoff) = 1 5 Vdc) (V c e , - 100 100 MAdc 'C EX 2N5336 , 2N5337 2N5338,2N 5339 2N5336 ,2N 5337 — 10 10 -


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PDF L3L7254 O-205AD 2N6190 2N6193 2N5336 2N5337 2N5336 2N5339 2n5339
2N5339

Abstract: 2N5336 2N533 2N6336 2N6190 2N5338 2N5337 2n5339 jantx 2n5337 jantx 2N6193
Text: a\NBS 2N5336 2N5337 2N5338 2N5339* *also available as JAN, JANTX, JANTXV MEDIUM-POWER NPN , 80-100 VOLTS 6 WATTS MAXIMUM RATINGS Rating Symbol 2N5336 2N5337 2N5338 2N533« Unit , )794-1666 / FAX: (978)689-0803 T4-4.8-860-330 REV: - 2N5336 2N5337 2N5338 2N5339* ELECTRICAL , * IIq B 50 mAdc, lB -0) 2N5336 , 2N 5337 2N5338, 2N 5339 - BVcEOIeutl* 80 100 - Vdc Collector Cutoff Current (VCE-75Vdc, lB-0) 2N5336 , 2N 5337 - >CEO 100 MAdc (VCE -90 Vdc, lg - 0) 2N6338, 2N 5339 - 100


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PDF 2N5336 2N5337 2N5338 2N5339* 2N6190 2N6193 2N533Â 2N5339 2N533 2N6336 2n5339 jantx 2n5337 jantx 2N6193
2014 - Not Available

Abstract: No abstract text available
Text: 2N5336 2N5337 2N5338 2N5339 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5336 series devices are silicon epitaxial planar NPN , Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg ΘJC 2N5336 2N5337 80 80 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N5336 2N5337 SYMBOL TEST , =500mA 1.2 VBE(SAT) IC=2.0A, IB=200mA 1.2 VBE(SAT) IC=5.0A, IB=500mA 1.8 hFE VCE=2.0V, IC=500mA ( 2N5336


Original
PDF 2N5336 2N5337 2N5338 2N5339 2N5336
LT 5337

Abstract: 2N5339 2N6193, Motorola LN 7904 2N5336 2n5337 2n5338 NS338
Text: SEMICONDUCTOR 2N5336 2N5339 5 AM PERE thru MEDIUM-POWER NPN SILICO N TRAN SISTO RS . . . designed for , Symbol V cEO V cB Veb ic Iß Pd T J , T stg 2N5336 2N5338 2N5337 2N5339 SO 100 . 80 100 6.0 5.0 1.0 6.0 , MOTOROLA SC XSTRS/R F 1EE D | b3b75 S4 0 0 0 4 5 4 3 ^ 3 | _ 2N5336 thru 2N5339 T ' 3 3 - , Current (V b e 3 6.0 Vdc, lc " 0) 2N5336 , 2N5337 2N5338,2N5339 2N5336 ,2N5337 2N5338,2N5339 12 2N5336 , 2N5337 2N 5338,2N 5339 2N5336 ,2N 5337 2N5338,2N5339 - " - 80 100 'CEO - - MAdc 100 100 /¿Ade


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PDF 2N5336 2N5339 2N6190 2N6193 LT 5337 2N5339 2N6193, Motorola LN 7904 2n5337 2n5338 NS338
2010 - Not Available

Abstract: No abstract text available
Text: 2N5336 6 Watt NPN silicon power. 13.36 Transistors Bipolar Silicon N. http://store.americanmicrosemiconductor.com/ 2n5336.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N5336 2N5336 6 Wat t NPN s ilic o n po w er. Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2) Their price was very , Price: Our Price: You Save: Americanmicrosemi 2N5336 $ 16.70 $ 13.36 $ 3.34 Total Price $ 13.36


Original
PDF 2N5336 com/2n5336 2N5336
2N5339

Abstract: 2N5337 2N5336 2N5338 1B05A
Text:  central Semiconductor corp. 145 Adams Avenue Hauppauge, New York 11788 ■♦1 Hi 2N5336 , USA DESCRIPTION Tel: (631) 435-1110 • Fax: (631) 435-1824 The CENTRAL SEMICONDUCTOR 2N5336 series , at high current levels are needed. MAXIMUM RATINGS (Tc=25°C) 2N5336 2N5338 SYMBOL 2N5337 , otherwise noted) 2N5336 2N5338 2N5337 2N5339 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UN , =2.0V, Ic=500mA ( 2N5336 , 2N5338) 30 30 hFE VCE=2.0V, Ic=500mA (2N5337, 2N5339) 60 60 hFE VCE


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PDF 2N5336 2N5337 2N5338 2N5339 2N5338 2N5339 500mA 1B05A
Not Available

Abstract: No abstract text available
Text: 7^ 2 ^ 5 3 ? 002=1335 7 ■£ jl 1 ^ 3 2 -O S 2N5336 /5337 2N5338/5339 SCS-THOMSON , DESCRIPTION The 2N5336 , 2N5337, 2N5338 and 2N5339 are silicon epitaxial planar NPN transistors in Jedec TO , ) Collector Current lo ICM Ib T c ase — 2 5 °C December 1988 1/4 1089 2N5336 /37/38/39 , 200 ns 2 \is 200 ns 7 CEC 53 7 ) J 2N5336 /37/38/39 GGE5 33 7 _J] _ S 6 , 7 ^2 3 7 2N5336 /37/38/3 S Power Rating Chart. 6 002=1330 2 T -33-05 3QE


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PDF 2N5336/5337 2N5338/5339 2N5336, 2N5337, 2N5338 2N5339 2N5336/37/38/3 25/uF 10/LIS
Not Available

Abstract: No abstract text available
Text: 2N5320 2N5321 2N5322 2N5323 2N5333 2N5334 2N5335 2N5336 2N5336 C E C C 2N5336X 2N5337 2N5337 C E C C


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PDF 2N4938DCSM 2N4939 2N4939DSCM 2N4999 2N5000 2N5000-SM 2N5001 2N5001-SM 2N5001S 2N5002
2N5339

Abstract: transistor d44h11 CP219 CJD44H11 2N5427 2N5428 D44H11 2N5338 2N5336 2N5429
Text: PROCESS CP219 Power Transistor NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 83 x 83 MILS Die Thickness 11 MILS Base Bonding Pad Area 13.2 x 19.7 MILS Emitter Bonding Pad Area 13.2 x 21.2 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 1,670 PRINCIPAL DEVICE TYPES 2N5336 2N5337 2N5338 2N5339 2N5427 2N5428 2N5429 2N5430 D44H11 CJD44H11


Original
PDF CP219 2N5336 2N5337 2N5338 2N5339 2N5427 2N5428 2N5429 2N5430 D44H11 2N5339 transistor d44h11 CP219 CJD44H11 2N5427 2N5428 D44H11 2N5338 2N5336 2N5429
2002 - 2N5336

Abstract: No abstract text available
Text: 2N5336 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021) dia. IC = 5A 5.08 (0.200) typ. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications


Original
PDF 2N5336 O205AD) 1-Aug-02 2N5336
2n6190

Abstract: No abstract text available
Text: * 2N3507* 2N3418* 2N5336 2N5337 2N5338 2N5339 2N5681 2N5682 1.0/2.0 2.0/2.0 2.0/2.0 2.0/2.0 2.0/2.0 .25


OCR Scan
PDF T0-205 2N3439* 2N3440* 2N3506* 2N3507* 2N3418* 2N5336 2N5337 2N5338 2N5339 2n6190
2N5336

Abstract: 2N5429 2N5428 82mils 2N5339 2N5427 2N5338 2N5430 CJD44H11 CP219
Text: PROCESS CP219 Central Power Transistor TM Semiconductor Corp. NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 82 x 82 MILS Die Thickness 11 MILS Base Bonding Pad Area 13.2 x 19.7 MILS Emitter Bonding Pad Area 13.2 x 21.2 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 1,670 PRINCIPAL DEVICE TYPES 2N5336 2N5337 2N5338 2N5339 2N5427 2N5428


Original
PDF CP219 2N5336 2N5337 2N5338 2N5339 2N5427 2N5428 2N5429 2N5430 D44H11 2N5336 2N5429 2N5428 82mils 2N5339 2N5427 2N5338 2N5430 CJD44H11 CP219
S S 850-03

Abstract: ST 7502 2N3742 2N3421 2N3420 2N3419 2N3418 2N1700 2N1482 2N1481
Text: .001080 6 75 50' .3'@1/ 1 1.2*@1/.1 2N5336 80 5.0 30-120®2/2 1.2®5/.5 1 2©2/.2 .01@75 6 250 30 .3'05/ 5 1.5*@5/.5 2N5337 80 5.0 60-240@2/2 1 2®5/.5 1.202/.2 01®75 6 250 30 ,3'@5/.5 1.5*05/5 2N5336


OCR Scan
PDF bSb1T13 O-39/TÃ 0-800V 2N1479 2N1480 2N1481 2N1482 2N5339 2N5541 2N5729 S S 850-03 ST 7502 2N3742 2N3421 2N3420 2N3419 2N3418 2N1700 2N1482 2N1481
BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Text: BSS44 BSS44 2N5876 BDW51B 2N3055 BDW51B BDW51B BDW51B BDW51B 2N5336 2N5336 2N5336 2N3439 , 2N5334 2N5335 2N5336 2N5337 2N5338 2N5339 2N5346 2N5347 2N5348 2N5349 2N5386 2N5387 2N5388 , TIP31B TIP31B TIP31B TIP31B 2N5301 2N5302 2N5303 2N5339 BSS44 2N5337 BUY47 2N5336 2N5337 , BUX41 BUX41 BUX41 2N6547 2N6547 BUX21 BUX21 BUX22 BUX22 MJ10004 2N4923 2N4921 2N5338 2N5336 2N5336 2N3716 2N3716 2N3716 2N3716 2N3716 BUW24 BU208A 2N3055 BDW51B BDW51C BUW34 BUW34


Original
PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
2002 - Not Available

Abstract: No abstract text available
Text: 2N5336 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 80V 5.08 (0.200) typ. IC = 5A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS


Original
PDF 2N5336 O205AD) 17-Jul-02
2NC5339

Abstract: 2N6191 2n4877 2N5349 2N6187 2N534B 2N6186 2nc53 2n5430 2N5347
Text: MOTOROLA SC O I O D E S / O P T O } 34 ]>F| L,3L,7S55 Q B 7 t i34 t . |~ S367255 MOTOROLA SC ( D I O D E S /O P TO ) 34C 37934 D SILICON POWER TRANSISTOR DICE (continued) r - 3 3 ^ '/ DIE NO. - NPN LINE SOURCE - PL500.68 NPN PNP 2C5339 / / DIE NO. - PNP LINE SOURCE - PL500.67 2C6193 This die provides performance equal to or better than that of the following device types: NPN 2N4877 2N5336 2N5337 2N5338 2NS339 2N5346 2N5347 2N534B 2N5349


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PDF S367255 PL500 2C5339 2C6193 2N4877 2N5336 2N5337 2N5338 2NS339 2NC5339 2N6191 2N5349 2N6187 2N534B 2N6186 2nc53 2n5430 2N5347
transistor A 27611

Abstract: 27611 transistor 27611 power transistor transistor 27611 27611 transistor k74 MPS5551 FTS05550 TL 5551 A 27611
Text: ®| 34^1,74 dd57t,d7 3469674 FAIRCHILD SEMICONDUCTOR 84D 27607 D FA.RCH.UD 2N5336 /2N5338 RsnoBscm 6 Watt , and 100 V (Min) 2N5336 TO-5 • Vceom) . 1.2 V (Max) @ 5.0 A 2N5338 TO-5 ABSOLUTE MAXIMUM RATINGS , ) semiconductor 04 de|34fa«h,74 dqb7b0fl 3469674 FAIRCHILD SEMICONDUCTOR 84D 27608 D 2N5336 /2N5338 T^s-os


OCR Scan
PDF 2N5320/2N5321 2N5322/2N5323 T-33-/7 2N5320, 2N5322, 2N5321, 57W/0 transistor A 27611 27611 transistor 27611 power transistor transistor 27611 27611 transistor k74 MPS5551 FTS05550 TL 5551 A 27611
2002 - Not Available

Abstract: No abstract text available
Text: 2N5336 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 80V 5.08 (0.200) typ. IC = 5A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS


Original
PDF 2N5336 O205AD) 19-Jun-02
Not Available

Abstract: No abstract text available
Text: 2N5074 2N5075 2N5076 2N5077 2N5148 2N5150 2N5239 2N5240 2N5241 2N5284 2N5285 2N5336 2N5337 2N5338 2N5339


OCR Scan
PDF T-33-0\ 0DM35T5 D0D0S54 2N5002 2N5004 2N5067 2N5068 2N5069 2N5074 2N5075
2N5552

Abstract: 2N5388 2N5349 2N5348 2N5347 2N5346 2N5339 2N5338 2N5337 2N5540
Text: (| If PPC PRODUCTS CORPORATION Il SEMICONDUCTOR SPECIALIST NPN DEVICE CASE BRE VC VCB AKDOV\ DLTAGEÎ VCE /N VEB vŒ (V) hF 2N5336 TO-39 80 80 6 2 2 30 120 2 0.5 1.2 2 2N5337 TO-39 80 80 6 2 2 60 240 2 0.5 1.2 2 2N5338 TO-39 100 100 6 2 2 30 120 2 0.5 1.2 2 2N5339 TO-39 100 100 6 2 2 60 240 2 0.5 1.2 2 2N5346 TO-59/I 100 80 6 2 2 30 120 2 0.2 0.7 1 2N5347 TO-59/I 80 80 6 2 2 60 240 2 0.2 0.7 1 2N5348 TO-59/I 100 100 6 2


OCR Scan
PDF 2N5336 2N5337 2N5338 2N5339 2N5346 O-59/I 2N5347 2N5348 2N5552 2N5388 2N5349 2N5540
Not Available

Abstract: No abstract text available
Text: BIPOLAR NPN PLAN AR POW ER T R A N SIST O R S DEVICE TYPE PEAK !C AMPS VCE (sat) max VOLTS PACKAGE b v CEO VOLTS hFE min/max 'C @ VCE A V c @ 'b A A T0-205 (TO-5) 2N3439* 2N3440* 2N3506* 2N3507* 2N3418* 2N5336 2N5337 2N5338 2N5339 2N5681 2N5682 350 250 40 50 60 80 80 100 100 100 120 1.0 1.0 3.0 3.0 3.0 5.0 5.0 5.0 5.0 1.0 1.0 40-160 40-160 40-200 30-150 20-60 30-120 60-240 30-120 60-240 40-150 40-150 .02/10.0 .02/10.0 1.5/2.0 1.5/2.0 1.0/2.0 2.0/2.0 2.0/2.0 2.0/2.0 2.0/2.0 .25/5.0


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PDF T0-205 2N3439* 2N3440* 2N3506* 2N3507* 2N3418* 2N5336 2N5337 2N5338 2N5339
Not Available

Abstract: No abstract text available
Text: tt < o & mà PACKAGE TO-204 (TO-3) D E V IC I TYPE 2N5741 2N5742 2N6246 2N6247 BV«0 VO LTS 60 100 60 80 'C AM PS 20.0 20.0 15.0 15.0 hf l m in / m a x 20-80 20-80 20-100 20-100 ·c @ vc i A V 10.0/5.0 10.0/5.0 7.0/5.0 6.0/5.0 m ax VO LTS 1.5 1.5 2.5 3.5 A A 10.0/1.0 10.0/1.0 15.0/1.5 15.0/1.5 N P N P O W E R TRAN SISTO RS PACKAGE PEAK D E V IC E TYPE 2N3439"* 2N3440* 2N3506" 2N3507* 2N3418* 2N5336 2N5337 2N5338 2N5339 2N5681 2N5682 b v ceo ^CE


OCR Scan
PDF O-204 2N5741 2N5742 2N6246 2N6247 2N3439" 2N3440* 2N3506" 2N3507* 2N3418*
BU606D

Abstract: BU606 BU608D BSW68 BUY18S 2N341B buy495 2N5415 BFX34 BSS44
Text: /5 0.75 2.5/250 2N5154 2N5153 100 80 5 11.7 70 2.5/5 0.75 2.5/250 2N5336 80 80 5 6 20 5/2 1.2


OCR Scan
PDF BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 BU606D BU606 BU608D BSW68 BUY18S 2N341B buy495 2N5415 BFX34
PPC Products TO-66

Abstract: 2N5348 2N5347 2N5346 2N5339 2N5338 2N5337 2N5336 PPC Products 2N5542
Text: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST NPN BREAKDOWN VOLTAGES vCE (V) hFE SAT. VOLTAGES (Max.) DEVICE CASE VCB VCE vEB 'C (A) Min. Max. C (A) 'B (A) VCE (V) VBE (V) 2N5336 TO-39 80 80 6 2 2 30 120 2 0.5 1.2 2 2N5337 TO-39 80 80 6 2 2 60 240 2 0.5 1.2 2 2N5338 TO-39 100 100 6 2 2 30 120 2 0.5 1.2 2 2N5339 TO-39 100 100 6 2 2 60 240 2 0.5 1.2 2 2N5346 TO-59/I 100 80 6 2 2 30 120 2 0.2 0.7 1 2N5347 TO-59/I 80 80 6 2 2 60 240 2 0.2 0.7 1 2N5348 TO-59/I 100 100 6 2 2 30 120 2


OCR Scan
PDF 2N5336 2N5337 2N5338 2N5339 2N5346 O-59/I 2N5347 2N5348 PPC Products TO-66 PPC Products 2N5542
SF1020

Abstract: 2N5000 2M3996 2N5334 2N5154 2N5152 2N4998 2N4300 2N3867 2n6324
Text: -111 2N3997 80 1.0 40 30 100 TO-111 SFT3997 80 1.0 80 30 100 TO-59 2N5336 30 2.0 30 6 25 TO-39 2N5337


OCR Scan
PDF 2N4300 2N4998 O-111 2N5000 SFT4300 2N3867 2N5334 2N5335 SFT3507 SF1020 2M3996 2N5154 2N5152 2n6324
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