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2N5322 Central Semiconductor Corp Small Signal Bipolar Transistor, 2A I(C), 75V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN
2N5322 LEAD FREE Central Semiconductor Corp TRANS PNP 75V 2A TO-39
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2N5322 Central Semiconductor Corp TME Electronic Components 3 $5.95 $4.25
2N5322 Central Semiconductor Corp Avnet - $1.29 $1.19
2N5322 SPC Multicomp Newark element14 4,496 $0.96 $0.35
2N5322 Central Semiconductor Corp Future Electronics - $1.99 $1.32
2N5322 RCA Bristol Electronics 17 $3.00 $2.25
2N5322 Fairchild Semiconductor Corporation Bristol Electronics 49 $2.46 $1.23
2N5322 STMicroelectronics Bristol Electronics 10 $2.46 $2.46
2N5322 SPC Multicomp Newark element14 2,731 $1.36 $0.49
2N5322 sml ComS.I.T. 148 - -
2N5322 TT Electronics Power and Hybrid / Semelab Limited Richardson RFPD - $21.91 $19.61
2N5322 Solid State Devices Inc (SSDI) element14 Asia-Pacific 2,735 $1.77 $0.77
2N5322 SPC Multicomp element14 Asia-Pacific 4,656 $1.08 $0.71
2N5322 SPC Multicomp Farnell element14 4,607 £1.80 £0.52
2N5322 Solid State Devices Inc (SSDI) Farnell element14 2,731 £1.40 £0.70

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2N5322 datasheet (55)

Part Manufacturer Description Type PDF
2N5322 Central Semiconductor Small Signal Transistors Original PDF
2N5322 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 75V 2A TO-39 Original PDF
2N5322 Semelab HIGH SPEED MEDIUM VOLTAGE SWITCHES - Pol=PNP / Pkg=TO39 / Vceo=75 / Ic=2 / Hfe=30-130 / fT(Hz)=50M / Pwr(W)=10 Original PDF
2N5322 Semelab High Speed Medium Voltage Switches - Pol=PNP / Pkg=TO39 / Vceo=75 / Ic=2 / Hfe=30-130 / fT(Hz)=50M / Pwr(W)=10 Original PDF
2N5322 STMicroelectronics SMALL SIGNAL PNP TRANSISTORS - Pol=PNP / Pkg=TO39 / Vceo=75 / Ic=2 / Hfe=30-130 / fT(Hz)=50M / Pwr(W)=10 Original PDF
2N5322 STMicroelectronics Small Signal PNP Transistor Original PDF
2N5322 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
2N5322 API Electronics Short form transistor data Scan PDF
2N5322 API Electronics Short form transistor data Scan PDF
2N5322 Boca Semiconductor SWITCHING TRANSISTORS (PNP SILICON) - Pol=PNP / Pkg=TO39 / Vceo=75 / Ic=2 / Hfe=30-130 / fT(Hz)=50M / Pwr(W)=10 Scan PDF
2N5322 Fairchild Semiconductor 10 Watt NPN-PNP Silicon Power - Pol=PNP / Pkg=TO39 / Vceo=75 / Ic=2 / Hfe=30-130 / fT(Hz)=50M / Pwr(W)=10 Scan PDF
2N5322 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N5322 General Diode Transistor Selection Guide Scan PDF
2N5322 General Electric General purpose P-N-P silicon power transistor. - Pol=PNP / Pkg=TO39 / Vceo=75 / Ic=2 / Hfe=30-130 / fT(Hz)=50M / Pwr(W)=10 Scan PDF
2N5322 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N5322 Others Transistor Shortform Datasheet & Cross References Scan PDF
2N5322 Others Basic Transistor and Cross Reference Specification Scan PDF
2N5322 Others Basic Transistor and Cross Reference Specification Scan PDF
2N5322 Others Shortform Transistor PDF Datasheet Scan PDF
2N5322 Others Shortform Transistor PDF Datasheet Scan PDF

2N5322 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N5322

Abstract: 2N5323
Text: PNP 2N5322 ­ 2N5323 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N5322 and 2N5323 are PNP , Junction Temperature TStg Storage Temperature range Value 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 2N5322 2N5323 Unit -75 -50 -100 -75 -100 -75 -6 -5 V V V V -2 A -1 A 1 , COMSET SEMICONDUCTORS Value 2N5322 2N5323 2N5322 2N5323 Unit 175 °C/W 17.5 °C/W


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PDF 2N5322 2N5323 2N5322 2N5323
2N5322

Abstract: 2N5323
Text:  2N5322 2N5323 PNP SWITCHING TRANSISTORS MAXIMUM RATINGS RATINGS SYMBOL 2N5322 2N5323 UNITS , 2N5322 2N5323 V(BR)ceo 75 50 Vdc Collector Cutoff Current VCE = 100 Vdc, VBE= 1.5 Vdc 2N5322 0.1 VCE = 70 Vdc, VBE= 1.5 Vdc, Tc= 150°C 2N5322 Icf.x 5.0 mAdc VCE = 75 Vdc, VBE = 1.5 Vdc , Vdc, Ic = 0 VBE = 5.0 Vdc, Ic = 0 2N5322 2N5323 'ebo 0.1 0.1 m Ade ON CHARACTERISTICS (1) DC Current Gain Ic = 500 mAdc, VCE = 4.0 Vdc 2N5322 hFE 30 130 2N5323 40 250 - Ic= 1.0 Adc, VCE


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PDF 2N5322 2N5323 2N5323 2N5322 300ns,
2N5320 RCA

Abstract: 2N5320 I3007 2N5321 RCA RCA 2N5321 I3001 sl 100b trs 2n5320 RCA 2N5322 2N5321
Text: Transistors File Number 325 2N5320, 2N5321, 2N5322 , 2N5323 Complementary N-P-N & P-N-P Silicon Power Transistors General-Purpose Types for Small-Signal, Medium-Power Applications Features: , ■2N5322 ] p'N-p , collector current terminal designations The RCA-2N5320, 2N5321, 2N5322 and 2N5323 are doubled-diffused , salient features of that device. The 2N5322 and 2N5323, p-n-p complements of the 2N5320 and 2N5321, are , . The 2N5320, 2N5321, 2N5322 , and 2N5323 are supplied in jedec to-205AD the TO-2Q5AD package. MAXIMUM


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PDF DD171S4 T-73- 2N5320, 2N5321, 2N5322, 2N5323 2N5322 2N5320 2N5321 2N5320 RCA I3007 2N5321 RCA RCA 2N5321 I3001 sl 100b trs 2n5320 RCA 2N5322 2N5321
2003 - transistor pnp 30V 1A 1W

Abstract: 2N5322 NPN Transistor VCEO 80V 100V transistor pnp 30V 2A 1W 2N5320 2N5321 2N5323
Text: 2N5322 2N5323 MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE , ) DESCRIPTION 12.70 (0.500) min. 0.89 max. (0.035) The 2N5322 and 2N5323 are silicon planar , VCEO VEBO IC IB Ptot 2N5322 -100V -100V -75V -6V Collector ­ Base Voltage (IE = 0 , 2N5322 2N5323 ELECTRICAL CHARACTERISTICS FOR (Tcase = 25°C unless otherwise stated) Parameter , )CEV VCB = -80V IE = 0 2N5322 VCB = -60V IE VEB = -5V IC = 0 2N5322 -0.1 VEB =


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PDF 2N5322 2N5323 2N5322 2N5323 2N5320 2N5321 O-205AD) -500mA -50mA transistor pnp 30V 1A 1W NPN Transistor VCEO 80V 100V transistor pnp 30V 2A 1W
2004 - Not Available

Abstract: No abstract text available
Text: 2N5322 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. = 2N5322 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N5322 at our online store! 2N5322 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N5322 Information Did you Know , Request a Quote Test Houses 2N5322 Specifications Military/High-Rel : N V(BR)CEO (V) : 75 V(BR)CBO (V


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PDF 2N5322 2N5322 STV3208 LM3909N LM3909
2002 - Not Available

Abstract: No abstract text available
Text: DATA SHEET 2N5320 2N5322 2N5321 2N5323 NPN PNP COMPLEMENTARY SILICON SWITCHING , Resistance ΘJA 2N5320 2N5322 100 100 75 6.0 2N5321 2N5323 75 75 50 5.0 2.0 1.0 10 , ) IC=500mA, IB=50mA ( 2N5322 ) IC=500mA, IB=50mA (2N5323) VCE=4.0V, IC=500mA VCE=4.0V, IC=500mA VCE=2.0V, IC=1.0A VCE=4.0V, IC=50mA, f=10MHz 2N5320 2N5322 MIN MAX 0.5 0.1 100 75 6.0 0.5 0.7 , noted) 2N5320 2N5322 TEST CONDITIONS MIN MAX SYMBOL ton VCC=30V, IC=500mA, IB1=50mA (2N5320


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PDF 2N5320 2N5322 2N5321 2N5323 2N5320 2N5322, 2N5323)
2001 - 2N5322

Abstract: No abstract text available
Text: 2N5322 2N5323 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305 , (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. The 2N5322 and , °C Tcase = 50°C Storage and Junction temperature 2N5322 -100V -100V -75V -6V 2N5323 -75V -75V -50V , 2N5322 2N5323 ELECTRICAL CHARACTERISTICS FOR (Tcase = 25°C unless otherwise stated) Parameter ICBO , -5V VEB = -4V VBE = 1.5V IE = 0 2N5322 IE Min. Typ. Max. Unit -0.5 -5 -0.1 -0.5 µA µA =


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PDF 2N5322 2N5323 2n5323 2N5320 2N5321 2N5322
1997 - 2N5322

Abstract: 2N5323 2N5320 2N5321
Text: 2N5322 2N5323 SMALL SIGNAL PNP TRANSISTORS s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MEDIUM POWER AMPLIFIER NPN COMPLEMENTS ARE 2N5320 AND 2N5321 DESCRIPTION The 2N5322 and , ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value 2N5322 Unit 2N5323 V CBO Collector-Base , W 10 W -65 to 200 o C 1/4 2N5322 /2N5323 THERMAL DATA R thj-case R thj-amb , Cut-off Current (I E = 0) V CB = -80 V V CB = -60 V for 2N5322 for 2N5323 I EBO Collector


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PDF 2N5322 2N5323 2N5320 2N5321 2N5322 2N5323 2N5321
2002 - 2N5323

Abstract: 2N5320 2N5321 2N5322 2N5322 2N5320
Text: 2N5322 2N5323 MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE , ) DESCRIPTION 12.70 (0.500) min. 0.89 max. (0.035) The 2N5322 and 2N5323 are silicon planar , VCEO VEBO IC IB Ptot 2N5322 -100V -100V -75V -6V Collector ­ Base Voltage (IE = 0 , 2N5322 2N5323 ELECTRICAL CHARACTERISTICS FOR (Tcase = 25°C unless otherwise stated) Parameter , Current V(BR)CEV VCB = -80V IE = 0 2N5322 VCB = -60V IE VEB = -5V IC = 0 2N5322


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PDF 2N5322 2N5323 2N5322 2N5323 2N5320 2N5321 O-205AD) -500mA -50mA 2N5322 2N5320
2001 - 2N5323

Abstract: No abstract text available
Text: 2N5322 2N5323 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305 , (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. The 2N5322 and , °C Tcase = 50°C Storage and Junction temperature 2N5322 -100V -100V -75V -6V 2N5323 -75V -75V -50V , 2N5322 2N5323 ELECTRICAL CHARACTERISTICS FOR (Tcase = 25°C unless otherwise stated) Parameter ICBO , -5V VEB = -4V VBE = 1.5V IE = 0 2N5322 IE Min. Typ. Max. Unit -0.5 -5 -0.1 -0.5 µA µA =


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PDF 2N5322 2N5323 2n5323 2N5320 2N5321 2N5323" 50MHz
2N5322

Abstract: 2N5323 Scans-00155738
Text: Boca Semiconductor Corp. (BSC) MAXIMUM RATINGS Rating Symbol 2N5322 2N5323 Unit , Thermal Resistance, Junction to Case RftJC 17.5 °C/W 2N5322 2N5323 CASE 79-04, STYLE 1 TO-39 (TO , mAdc, IB = 0) 2N5322 2N5323 V(BR)CEO 75 50 - Vdc Collector Cutoff Current (Vce = 100 Vdc, Vbe = 1-5 , Vdc, Tc = ibo=c) 2N5322 2N5323 'CEX — 0.1 5.0 Ö.1 5.0 mAdc Emitter Cutoff Current (vBe = 7.o Vdc, ic = o) (Vbe = 5.o vdc, ic = o) 2N5322 2N5323 Iebo - 0.1 0.1 mAdc ON CHARACTERISTICS!-!) DC


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PDF 2N5322 2N5323 2N5322 O-205AD) 2N5323 Scans-00155738
1999 - 2N5320

Abstract: 2N5321 2N5322 2N5323
Text: 2N5322 2N5323 MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE , ) The 2N5322 and 2n5323 are silicon planar expitaxial PNP transistors in jedec TO-39 metal case , VEBO IC IB Ptot 2N5322 -100V -100V -75V -6V Collector ­ Base Voltage (IE = 0) Collector ­ , . Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 7/99 2N5322 2N5323 , -80V IE = 0 2N5322 VCB = -60V IE VEB = -5V IC = 0 2N5322 -0.1 VEB = -4V IC =


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PDF 2N5322 2N5323 2N5322 2n5323 2N5320 2N5321 -500mA
2012 - 2N5322 2N5320

Abstract: pnp 500ma 40v pnp 500ma - 40v 500ma 40v pnp 2N5323 NPN, PNP for 500ma, 30v Ic-500mA NPN for 500ma, 30v 2n5321
Text: 2N5320 2N5321 2N5322 2N5323 NPN PNP w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON SWITCHING TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5320, 2N5322 series types are , Resistance Thermal Resistance SYMBOL VCBO VCEV VCEO VEBO IC IB PD TJ, Tstg JA JC 2N5320 2N5322 100 100 75 6.0 , ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N5320 2N5322 SYMBOL TEST CONDITIONS MIN MAX , VCE(SAT) IC=500mA, IB=50mA ( 2N5322 ) VCE(SAT) IC=500mA, IB=50mA (2N5323) VBE(ON) VCE=4.0V, IC=500mA 1.1


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PDF 2N5320 2N5321 2N5322 2N5323 2N5320, 2N5323 2N5322 2N5320 pnp 500ma 40v pnp 500ma - 40v 500ma 40v pnp NPN, PNP for 500ma, 30v Ic-500mA NPN for 500ma, 30v
2004 - 2N5322 2N5320

Abstract: 2N5320 2N5322 2N532
Text: 2N5320 & 2N5322 Medium Power Transistors Features: · High performance, low frequency devices , Medium Power Amplifier and Switching Applications. 2N5320 NPN 2N5322 PNP TO-39 Metal Can Package , 2. Base 3. Collector Page 1 31/05/05 V1.0 2N5320 & 2N5322 Medium Power Transistors Absolute Maximum Ratings Description 2N5320 NPN 2N5322 PNP Symbol Collector Emitter Voltage , Test Condition Collector Emitter Voltage VCEO IC = 100mA, IB = 0 2N5320/ 2N5322 Collector


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PDF 2N5320 2N5322 2N5320 2N5322 2N5322 2N5320 2N532
2003 - 2n5320 transistor

Abstract: 2N5320 transistor 2N5321 2N5322 2N5320 Ic-500mA 500ma 40v pnp pnp 500ma 40v 2N5323 2N5322 2N5321
Text: DATA SHEET 2N5320 2N5322 2N5321 2N5323 NPN PNP COMPLEMENTARY SILICON SWITCHING , Resistance 2N5320 2N5322 100 100 75 6.0 2N5321 2N5323 75 75 50 5.0 2.0 1.0 10 UNITS V , ) IC=500mA, IB=50mA ( 2N5322 ) IC=500mA, IB=50mA (2N5323) VCE=4.0V, IC=500mA VCE=4.0V, IC=500mA VCE=2.0V, IC=1.0A VCE=4.0V, IC=50mA, f=10MHz 2N5320 2N5322 MIN MAX 0.5 0.1 100 75 6.0 0.5 0.7 , noted) 2N5320 2N5322 SYMBOL TEST CONDITIONS MIN MAX ton VCC=30V, IC=500mA, IB1=50mA (2N5320


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PDF 2N5320 2N5322 2N5321 2N5323 2N5320 2N5322, 2N5323) 2n5320 transistor transistor 2N5321 2N5322 2N5320 Ic-500mA 500ma 40v pnp pnp 500ma 40v 2N5323 2N5322 2N5321
0057W

Abstract: BD PNP
Text: ·- . Higli-Speed Power Transistors File Number 325 2N5320, 2N5321, 2N5322 , 2N5323 , iu m -P o w er Applications Features: , 2N5322 I p' N-p J 2N5320 2N5323 J Complements of: £ 2N5321 , -2N5320, 2N5321, 2N5322 and 2N5323 are doubled-diffused epitaxial-planar silicon power transistors intended for , , high-disslpation versions of the 2N2102 with all of the salient features of that device. The 2N5322 and 2N5323 , with all of its additional outstanding features. The 2N5320, 2N5321, 2N5322 , and 2N5323 are supplied in


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PDF 2N5320, 2N5321, 2N5322, 2N5323 2N5322 2N5320 2N5323 2N5321 RCA-2N5320, 0057W BD PNP
AN 5322

Abstract: 2N5322 2N5320 2N5320 2N5321 2N5322 2N5323 PNP TO-39
Text: SWITCHING TRANSISTORS 2N5320, 2N5321 NPN 2N5322 , 2N5323 PNP TO-39 Metal Can Package Medium Power , Cut Off Current 2N5322 75 100 7 2N5321 50 75 5 Data Sheet MIN MAX UNITS 75 , SILICON POWER SWITCHING TRANSISTORS 2N5320, 2N5321 NPN 2N5322 , 2N5323 PNP TO-39 Metal Can Package , =0.5A, VCE=4V 2N5320/5322 2N5321/5323 IC=500mA, IB=50mA 2N5320 2N5321 2N5322 2N5323 IC=500mA, VCE , 80 100 ns ns 800 ns 2N5322 /5323 *VBE (on) V V V V 2N5320/5321 Base


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PDF ISO/TS16949 2N5320, 2N5321 2N5322, 2N5323 2N5320 C-120 2N5320 281102E AN 5322 2N5322 2N5320 2N5322 PNP TO-39
1999 - 2N5322

Abstract: No abstract text available
Text: 2N5322 2N5323 MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) HIGH SPEED MEDIUM VOLTAGE SWITCHES DESCRIPTION The 2N5322 , °C Storage and Junction temperature 2N5322 -100V -100V -75V -6V 2N5323 -75V -75V -50V -5V -2A -1A 1W 10W , . Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 7/99 2N5322 2N5323 , IE = 0 2N5322 IE Min. Typ. Max. Unit -0.5 -5 -0.1 -0.5 µA µA = 0 2N5323 = 0 2N5323


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PDF 2N5322 2N5323 2n5323 2N5320 2N5321 -500mA
1997 - 2N5322

Abstract: 2N5323 2N5321 2N5320
Text: 2N5322 2N5323 SMALL SIGNAL PNP TRANSISTORS s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MEDIUM POWER AMPLIFIER NPN COMPLEMENTS ARE 2N5320 AND 2N5321 DESCRIPTION The 2N5322 and , ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t 2N5322 2N5323 V CBO , 1 W 10 W -65 to 200 o C 1/4 2N5322 /2N5323 THERMAL DATA R t hj-ca se R t , CBO Collector Cut-off Current (IE = 0) V CB = -80 V V CB = -60 V for 2N5322 for 2N5323


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PDF 2N5322 2N5323 2N5320 2N5321 2N5322 2N5323 2N5321
300W TRANSISTOR AUDIO AMPLIFIER

Abstract: 70w amplifier 40250 Transistor 40594 40629 Transistor npn 40872 40538 120w audio power amplifier circuit ic 40538 2n3055 complement
Text: (2N6292 ) 40872 (2N6111) - 40594 (2N6320) 40595 ( 2N5322 ) 40 Quasi-Comp. 40636 (2N3055) - 40594 (2N5320) 40595 ( 2N5322 ) - 40999 (2N5415) 40999 (2N5415) 80 180W 120W Quasi-Comp. Paral. out. (4) 40983's (2N5240 , 2N5320 NPN Complement of 2N5322 75 90 100 30-130 500 4 0.5* - 80 0.5 500 50 1.1 500 2N5321 NPN , . 70-W Quasi-Comp. Univ. Amplifier 95 - 70-350 300 4 10* - 85 0.8 300 30 1.4 300 2N TYPES 2N5322 FAMILY [p-n-p] (silicon) fj = 50 MHz min; Pj = 10 max •'CBO-jUA a|cer-ma 2N5322 PNP Complement of


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PDF 2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) 300W TRANSISTOR AUDIO AMPLIFIER 70w amplifier 40250 Transistor 40594 40629 Transistor npn 40872 40538 120w audio power amplifier circuit ic 40538 2n3055 complement
1994 - 2N5322

Abstract: 2N5323
Text: t T st g , T j October 1988 Storage and Junction Temperature 1/4 2N5322-2N5323 THERMAL , mA V CC = ­ 30 V I B1 = ­ I B2 = ­ 50 mA MHz ns 100 ns 1000 2N5322-2N5323 TO39 , 3/4 2N5322-2N5323 Information furnished is believed to be accurate and reliable. However , 2N5322 2N5323 MEDIUM-POWER AMPLIFIERS DESCRIPTION The 2N5322 and 2N5323 are silicon planar , ABSOLUTEMAXIMUM RATINGS Symbol Parameter Value 2N5322 2N5323 Unit V CBO Collector-base Voltage


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PDF 2N5322 2N5323 2N5322 2N5323
Not Available

Abstract: No abstract text available
Text: Back to Bipolar Small Signal 2N5322 2N5323 PNP SWITCHING TRANSISTORS MAXIMUM RATINGS RATINGS SYMBOL 2N5322 2N5323 Collector-Emitter Voltage 75 50 V ceo Collector-Base Voltage 100 75 VcBO , CHARACTERISTICS Collector-Emitter Breakdown Voltage Ic = lOOmAdc, IB = 0 2N5322 2N5323 Collector Cutoff Current VCE = 100 Vdc, VBE= 1.5 Vdc 2N5322 2N5322 VCE = 70 Vdc, VBE= 1.5 Vdc, Tc = 150°C VCE = 75 Vdc, VBE = , = 0 2N5322 VBE = 5.0 Vdc, Ic = 0 2N5323 ON CHARACTERISTICS (1) DC Current Gain Ic = 500 mAdc, VCE =


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PDF 2N5322 2N5323 2N5323 3kA/10kA/10kA
2001 - 2N5320

Abstract: 2N5321 2N5322 2N5323 2N5323, PNP TO-39
Text: Certified Manufacturer SILICON PLANAR SWITCHING TRANSISTORS 2N5320, 2N5321 (NPN) 2N5322 , 2N5323 (PNP , RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL 2N5320 2N5321 2N5322 2N5323 VCEO 75 , CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION 2N5320 2N5321 2N5322 , TRANSISTORS 2N5320, 2N5321 (NPN) 2N5322 , 2N5323 (PNP) TO-39 Metal Can Package ELECTRICAL , 2N5322 2N5323 UNITS IC=50mA, VCE=4V, f=10MHz >5 >5 >5 >5 >5 VCC=30V, IC


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PDF 2N5320, 2N5321 2N5322, 2N5323 2N5320 2N5321 2N5322 C-120 2N5323 2N5323, PNP TO-39
2002 - 2N5320

Abstract: 2N5321 2N5322 2N5323
Text: SILICON POWER SWITCHING TRANSISTORS 2N5320, 2N5321 NPN 2N5322 , 2N5323 PNP TO-39 Metal Can Package , /5322 Emitter Cut Off Current 2N5322 75 100 7 2N5321 50 75 5 Data Sheet MIN MAX , 1 of 4 SILICON POWER SWITCHING TRANSISTORS 2N5320, 2N5321 NPN 2N5322 , 2N5323 PNP TO , *VCE (sat) IC=0.5A, VCE=4V 2N5320/5322 2N5321/5323 IC=500mA, IB=50mA 2N5320 2N5321 2N5322 , 250 1.1 1.4 V V 80 100 ns ns 800 ns 2N5322 /5323 *VBE (on) V V V V


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PDF 2N5320, 2N5321 2N5322, 2N5323 2N5320 C-120 2N5320 281102E 2N5322
Not Available

Abstract: No abstract text available
Text: SILICON POWER SWITCHING TRANSISTORS 2N5320, 2N5321 NPN 2N5322 , 2N5323 PNP TO-39 Metal Can Package , Current 2N5320/5322 Emitter Cut Off Current 2N5322 75 100 7 2N5321 50 Data Sheet MIN , µA Page 1 of 4 SILICON POWER SWITCHING TRANSISTORS 2N5320, 2N5321 NPN 2N5322 , 2N5323 PNP , 2N5321 2N5322 2N5323 IC=500mA, VCE=4V 2N5320/5322 2N5321/5323 MIN TYP MAX UNITS 10 30 40 130 250 1.1 1.4 V V 80 100 ns ns 800 ns 2N5322 /5323 *VBE (on


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PDF 2N5320, 2N5321 2N5322, 2N5323 2N5320 C-120 2N5320 281102E
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