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Part Manufacturer Description Datasheet Download Buy Part
2N5306 Central Semiconductor Corp Small Signal Bipolar Transistor, 0.3A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
2N5306 TIN/LEAD Central Semiconductor Corp TRANS NPN DARL 25V 0.3A TO-92
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2N5306 Central Semiconductor Corp Avnet - $0.21 $0.18
2N5306 Rochester Electronics - - -
2N5306 Fairchild Semiconductor Corporation Rochester Electronics 2,808 $0.02 $0.02
2N5306 National Semiconductor Corporation Bristol Electronics 130 $0.26 $0.13
2N5306 HI-SINCERITY Bristol Electronics 1,700 $0.26 $0.08
2N5306 Fairchild Semiconductor Corporation Bristol Electronics 6,959 $0.26 $0.04
2N5306 Fairchild Semiconductor Corporation Chip One Exchange 4,821 - -
2N5306 HARTING Technology Group Chip One Exchange 1,652 - -
2N5306 National Semiconductor Corporation New Advantage Corporation 21 - -
2N5306_D74Z Rochester Electronics - - -

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2N5306 datasheet (39)

Part Manufacturer Description Type PDF
2N5306 Fairchild Semiconductor NPN Darlington Transistor Original PDF
2N5306 Fairchild Semiconductor NPN Darlington Transistor Original PDF
2N5306 Allegro MicroSystems General Purpose Bipolar Transistor, NPN, 25 MinV, TO-92, 3-Pin Scan PDF
2N5306 Central Semiconductor Darlington Bipolar Transistor, NPN, 25V, TO-92, 3-Pin Scan PDF
2N5306 Central Semiconductor SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY) Scan PDF
2N5306 Fairchild Semiconductor NPN Darlington Transistor Scan PDF
2N5306 General Electric Semiconductor Data Handbook 1977 Scan PDF
2N5306 General Electric Semiconductor Data Book 1971 Scan PDF
2N5306 General Electric Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. Scan PDF
2N5306 Micro Electronics Semiconductor Device Data Book Scan PDF
2N5306 Micro Electronics Semiconductor Devices Scan PDF
2N5306 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N5306 Others Semiconductor Master Cross Reference Guide Scan PDF
2N5306 Others Shortform Transistor Datasheet Guide Scan PDF
2N5306 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N5306 Others Basic Transistor and Cross Reference Specification Scan PDF
2N5306 Others Transistor Shortform Datasheet & Cross References Scan PDF
2N5306 Others Basic Transistor and Cross Reference Specification Scan PDF
2N5306 Others Shortform Transistor PDF Datasheet Scan PDF
2N5306 National Semiconductor NPN Transistors / DARLINGTON Scan PDF

2N5306 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - 2n5306

Abstract: No abstract text available
Text: 2N5306 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. = 2N5306 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N5306 at our online store! 2N5306 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N5306 Information Did you Know , 2N5306 Specifications Military/High-Rel : N V(BR)CEO (V) : 25 V(BR)CBO (V) : 25 I(C) Max. (A) : 300m


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PDF 2N5306 2N5306 STV3208 LM3909N
2N5306 equivalent

Abstract: ATI 200M D39C4 2N5232A 2N5232 2N5174 2N4425 2N4424 2N4256 2N5306
Text: 200mA, 200MA 2N5306 NPN 25 7K-70K 2mA, 5 1.4 200mA, 200M A 2N5306A NPN 25 7K-70K 2mA, 5 1.4 200mA , 2mA, 5 0.125 10mA, 1mA 150 2 360 2N5305 NPN 25 2K-20K 2mA, 5 1.4 200mA, 0.2mA 60 4 400 2N5306 NPN 25 , Silicon Transistors r^j 2N5305,6,6A FOR TO-92 SERIES SEE GES5305 The General Electric 2N5305, 2N5306 and 2N5306A are NPN, silicon, planar, epitaxial, passivated Darlington monolithic amplifiers. These , (Vcu — 5V, Ic — 2mA) 2N5305 (Von = 5V, Ic = 100mA) 2N5305 ( Vce = 5V, Ir = 2mA) 2N5306 , A (Vck =


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PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 100Hz) 2N5306 equivalent ATI 200M D39C4 2N5306
1997 - 2N5306 equivalent

Abstract: 2N5306 MPSA14
Text: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for , Ambient © 1997 Fairchild Semiconductor Corporation Max Units 2N5306 625 5.0 83.3 mW mW/°C °C/W 200 °C/W 2N5306 Discrete POWER & Signal Technologies (continued , 6.0 2N5306 NPN Darlington Transistor Fairchild Semiconductor


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PDF 2N5306 MPSA14 2N5306 equivalent 2N5306
2n5306

Abstract: No abstract text available
Text: SEMICONDUCTOR ■2N5306 . TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 , noted C haracteristic M ax Units 2N5306 R ojc Total Device Dissipation Derate above , Resistance, Junction to Ambient 200 °C/W Pd 1997 Fairchild Semiconductor Corporation 2N5306 , u ty C y c le < 2.0% 7,000 6.0 2N5306 NPN Darlington Transistor


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PDF 2N5306 MPSA14 2n5306
2002 - 2N5306

Abstract: 2N5306 FAIRCHILD SEMICONDUCTOR MPSA14
Text: 2N5306 2N5306 NPN Darlington Transistor · This device is designed for applications requiring extremely high current gain at currents to 1.0A. · Sourced from process 05. · See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25°C unless , Fairchild Semiconductor Corporation Rev. B1, July 2002 2N5306 Thermal Characteristics TA=25°C unless otherwise noted 2N5306 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 ­0.15


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PDF 2N5306 MPSA14 2N5306 2N5306 FAIRCHILD SEMICONDUCTOR
2002 - Not Available

Abstract: No abstract text available
Text: 2N5306 2N5306 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol VCEO Parameter Collector-Emitter Voltage Value 25 Units V V VCBO , 2N5306 Thermal Characteristics TA=25°C unless otherwise noted 2N5306 Package Dimensions TO


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PDF 2N5306 MPSA14
2N5306

Abstract: 2N5306 FAIRCHILD SEMICONDUCTOR
Text: 2N5306 FAIRCHILD SEMICONDUCTOR ¡ m Discrete POW ER & Signal Technologies 2N5306 NPN Darlington Transistor T his device is designed for applications requiring extrem ely high cu rre n t gain at cu rre n ts to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol V cE O T A = 2 5°C unless o th e rw ise noted Parameter Collector-Emitter Voltage , Ambient Max 2N5306 625 5.0 8 3 .3 Units mW m W /°C °C/W °C/W R ojc R oja 200 < s) 1 9 9


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PDF 2N5306 PSA14 2N5306 2N5306 FAIRCHILD SEMICONDUCTOR
2N5308

Abstract: 2N5306 631 TO92 transistor 7k
Text: Datasheet Central Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors 2im5306 2n5308 npn silicon darlington transistor jedec to-92 case (ecb) description The CENTRAL SEMICONDUCTOR 2N5306 , applications. MAXIMUM RATINGS (TA = 25°C) SYMBOL 2N5306 2N5308 UNITS Collector-Base Voltage , ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) 2N5306 2N5308 SYMBOL TEST CONDITIONS MIN MAX


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PDF 2im5306 2n5308 to-92 2N5306, 2N5308 2N5306 100nA 631 TO92 transistor 7k
1997 - 2N5306

Abstract: F63TNR MPSA14 PN2222N CBVK741B019
Text: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for , Ambient © 1997 Fairchild Semiconductor Corporation Max Units 2N5306 625 5.0 83.3 mW mW/°C °C/W 200 °C/W 2N5306 Discrete POWER & Signal Technologies (continued , 6.0 2N5306 NPN Darlington Transistor TO-92 Tape and Reel Data TO-92 Packaging


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PDF 2N5306 MPSA14 2N5306 F63TNR PN2222N CBVK741B019
2N5305

Abstract: 2N5306 to-98 "to-98" package 2N5306 2N5306 equivalent GES5305 TO-98 GES5306A GES5306 2N5305 to-98
Text: , GES5305 2,000 20,000 (lc = 100mA, VCE = 5V) 2N5305, GES5305 hFE 6,000 - (lc = 2 mA, VCE = 5 V) 2N5306 , GES5306A 7,000 70,000 (lc = 100mA, VCE = 5V) 2N5306 , GES5306A 20,000 - Collector-To-Emitter , , GES5305 hfe 2,000 - (VCE = 5V, ic = 2mA, f = 1 KHZ) 2N5306 ,6A, GES5306,6A 7,000 - - (VCE = 5V, lc = , 15.7kHz) 2N5306A ,GES5306A eft Typical 230 nVVHz TERMINAL CONNECTIONS TO-92 Package Lead 1 - Emitter Lead


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PDF a017c 2N5305, GES5305, 92CS-42S2T 92CS-42626 2N5305 2N5306 to-98 "to-98" package 2N5306 2N5306 equivalent GES5305 TO-98 GES5306A GES5306 2N5305 to-98
D39C4

Abstract: ei50 2n5306 2N5249A 2N5232A 2N3901 2N3900A 2N3845A quan-tech 2N3844A
Text: r^j 2N5305,6,6A FOR TO-92 SERIES SEE GES5305 The General Electric 2N5305, 2N5306 and 2N5306A are , , BW ■■15.7KHZ, f = 10Hz to 15. /UH; 2N5306A NPN 25 7K-70K 2mA, 5 5.0 VCE 5V, c ~ 600M A, Rs = , . VCE (V) Max. C s 'c- >B 2N5305 NPN 25 2K-20K 2mA, 5 1.4 200mA, 200MA 2N5306 NPN 25 7K-70K 2mA, 5 1.4 200mA, 200M A 2N5306A NPN 25 7K-70K 2mA, 5 1.4 200mA, 200M A 2N5307 NPN 40 2K-20K 2mA , (Vcu — 5V, Ic — 2mA) 2N5305 (Von = 5V, Ic = 100mA) 2N5305 ( Vce = 5V, Ir = 2mA) 2N5306 , A (Vck =


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PDF 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 100Hz) D39C4 ei50 2n5306 2N5249A 2N5232A quan-tech
2N5306

Abstract: MPSA14
Text: Discrete POWER & Signal PAiRCH I L.P Technologies SEMICONDUCTOR ¡m 2N5306 C ^ TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VcEO Collector-Emitter Voltage 25 V VcBO , Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N5306 Pd Total Device


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PDF 2N5306 MPSA14 2N5306
53-06A

Abstract: 2n5306 2N5305
Text: b v Cb o _ _ 20,000 70,000 - V b v ebo 2N 5305, G ES5305 2N5305, GES5305 2N5306 , G ES5306A 2N5306 , G ES5306A VCE(sat) V BE(sat) hFE 6,000 7,000 20,000 - i ! C ollector-To-Em


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PDF 3fl75Dfll OG17c 2N5305, GES5305, S-42S27 10--Typical 53-06A 2n5306 2N5305
2N3417 equivalent

Abstract: 2N2221-2N2222 2N2222A npn transistor transistor 2n5174 IC TC 3588 beta transistor 2N2222 2N4424 equivalent 2N4424 2N3416 equivalent 1N4532
Text: 2N5306 7-70 25 1.4 400 ' 3.5 60 High input Impedance—typically 650K ohms—Ideal for low level, feign gain, low noise amplifier applicative. "A'1 versions feature guaranteed wideband 40.78 2N5306A , 2N5306 M73P-X5C2 NPN darlington chip for preamp input stages. 10 35.95 2N5814 M86PX503 NPN chip for


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PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N3417 equivalent 2N2221-2N2222 2N2222A npn transistor transistor 2n5174 IC TC 3588 beta transistor 2N2222 2N4424 equivalent 2N4424 2N3416 equivalent 1N4532
2N5133

Abstract: 2N5121 2N6179 2N5130 2N6178 2N6181 2n5134 2N6180 2Ns401 2n5296 transistor
Text: 2N5039 2N5298 2N5671 2N5040 2N5304 2N5672 2N5041 2N5305 2N5683 2N5090 2N5306 2N5684 2N5108 2N5307


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PDF 2N5006 2N5190 2N5432 2N5007 2N5191 2N5433 2N5008 2N5192 2N5434 2N5009 2N5133 2N5121 2N6179 2N5130 2N6178 2N6181 2n5134 2N6180 2Ns401 2n5296 transistor
D39C4

Abstract: 2N5305 2N5249A 2N5232A 2N5232 2N5174 2N4425 2N4424 2N4256 2N5175
Text: 200mA, 200MA 2N5306 NPN 25 7K-70K 2mA, 5 1.4 200mA, 200M A 2N5306A NPN 25 7K-70K 2mA, 5 1.4 200mA , 2mA, 5 0.125 10mA, 1mA 150 2 360 2N5305 NPN 25 2K-20K 2mA, 5 1.4 200mA, 0.2mA 60 4 400 2N5306 NPN 25


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PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A D39C4 2N5305 2N5175
2007 - Not Available

Abstract: No abstract text available
Text: Small Signal Darlington Transistors Part No. Polarity VCEO (V) 2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64 MPSA65 NPN PNP hFE @ VCE & IC IC (A) 20 30 30 40 20 30 30 30 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Min. Max. 7K 2K 7K 20K 20K 10K 14K 20K 20K 10K 50K 70K 20K 70K 140K - VCE(sat) @ IC VCE IC Max. IC (V) (mA) (V) (mA) 5 5 5 5 5 5 5 5 5 5 - 2 2 2 10 100 100 500 10


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PDF 2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64
PNP Transistor 2N2222 equivalent

Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent DIODE 1N9148 transistor npn high speed switching 2N2222 npn small signal current gain 1N3605
Text: preamp and small signal amplifier. 5 35.78 2N5306 M73P-X5C2 NPN darlington chip for preamp input stages


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PDF 1N914 1N914A 1N914B M46P-X510 1N3064 M46P-X507 1N3600 1N3605 M46P-X516 1N4150 PNP Transistor 2N2222 equivalent DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent DIODE 1N9148 transistor npn high speed switching 2N2222 npn small signal current gain
2N4424

Abstract: D39C4 quan-tech 2N5305 2N5249A 2N5232A 2N5232 2N5174 2N4425 2N4256
Text: 200mA, 200mA 2N5306 NPN 25 7K-70K 2mA, 5 1.4 200mA, 200m A 2N5306A NPN 25 7K-70K 2mA, 5 1.4 200mA , 2mA, 5 0.125 10mA, 1mA 150 2 360 2N5305 NPN 25 2K-20K 2mA, 5 1.4 200mA, 0.2mA 60 4 400 2N5306 NPN 25


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PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5307, D39C4 quan-tech 2N5305
TO-98

Abstract: transistor MPSA06 2N3904 TO-92 type NPN Transistor TO92 2N3391A transistor 2n3903 transistor TO-92 npn 2N3390 2N2926-5 2n2924 transistor
Text: 200 40 50-1 50 TO-92 2N3904 200 40 100-300 TO-92 • 2N5305 300 25 2K-20K TO-98 • 2N5306 300 25 , TO-92 • 2N5306A 300 40 7K-70K TO-98 • 2N5307 300 40 2K-20K TO-98 • 2N5308 300 40 7K-70K TO-98 â


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PDF 1CJ5bfl73 2N3390 2N2923 2N2924 2N2925 2N2926 2N2926-5 2N3391 2N3391A 2N3392 TO-98 transistor MPSA06 2N3904 TO-92 type NPN Transistor TO92 transistor 2n3903 transistor TO-92 npn 2n2924 transistor
MPS-A65

Abstract: No abstract text available
Text: . BC516 B C 517 MPSA12 MPSA13 MPSA14 MPSA63 MPSA65 MPSA66 MPSD04 MPSD54 2N5305 2N5306 2N5307 2N5308 P N N


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PDF BC146 BC146R BC146Y BC146G BC200 BC200R BC200Y BC200G BCW83 MT4102 MPS-A65
2N3403

Abstract: 2N3405 hs5305 2N3404 2N4425 LC-500 2N4256 2N3402 2N5305 2N5175
Text: 2N5306 7-70 25 1.4 400 ' 3.5 60 High input Impedance—typically 650K ohms—Ideal for low level, feign gain, low noise amplifier applicative. "A'1 versions feature guaranteed wideband 40.78 2N5306A


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PDF 2N3402 2N3403 2N3405 2N3414 2N3415 2N3416 2N3417 2N4424 D16P1 2N5305 hs5305 2N3404 2N4425 LC-500 2N4256 2N5175
MT4102

Abstract: BC200G SO 42 P BC146Y BC146R BC146 MT4104 MT 87 MPSD54 BCW83
Text: 2N5305 N TO-92B 600 300 25 2K 20K 2 5 1.4 200 60 10 _ - 2N5306 N TO-92B 600 300 25 7K 70K 2 5 1.4 200 60


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PDF BC146 MT-42 30-15K BC146R BC146Y BC146G MT4102 BC200G SO 42 P MT4104 MT 87 MPSD54 BCW83
2004 - 2N5376

Abstract: 2N5381 2N5088 equivalent 2N5450 2N5383 2N5086 2N4953 2N4424 2N4410 2N4403
Text: 2N5306 NPN DARLINGTON ECB 25 25 12 100 25 7,000 70,000 5.0 2.0 1.40


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PDF O-92-18R 2N5811 2N4401 2N4402 2N4403 2N4410 2N4424 2N4952 2N4953 2N5086 2N5376 2N5381 2N5088 equivalent 2N5450 2N5383 2N5086 2N4953 2N4424 2N4410 2N4403
2N5381

Abstract: 2N5383 2N5088 2N5087 2N5086 2N4953 2N4952 2N4424 2N4410 2N4403
Text: 0.125 10 4.0 - 5.0 - 2N5306 NPN DARLINGTON ECB 25 25 12 100 25


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PDF O-92-18R 2N4401 2N4402 2N4403 2N5772 2N5810 2N5811 2N5381 2N5383 2N5088 2N5087 2N5086 2N4953 2N4952 2N4424 2N4410 2N4403
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