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2N5303 Central Semiconductor Corp Power Bipolar Transistor, 20A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
2N5303 LEAD FREE Central Semiconductor Corp TRANS NPN 80V 20A TO-3
JANTX2N5303 Microsemi Corporation Power Bipolar Transistor, 20A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, SIMILAR TO TO-3, 2 PIN
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2N5303 SPC Multicomp Newark element14 62 $4.07 $2.10
2N5303 NTE Electronics Inc Newark element14 5 $4.91 $4.11
2N5303 Texas Instruments Bristol Electronics 5 - -
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2N5303JAN Microchip Technology Inc Avnet - $323.09 $268.99
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2N5303 datasheet (52)

Part Manufacturer Description Type PDF
2N5303 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 80V 20A TO-3 Original PDF
2N5303 Microsemi NPN Transistor Original PDF
2N5303 On Semiconductor POWER TRANSISTORS NPN SILICON - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original PDF
2N5303 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original PDF
2N5303 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
2N5303 API Electronics Short form transistor data Scan PDF
2N5303 Central Semiconductor NPN Silicon Power Transistor, TO-3 Scan PDF
2N5303 Diode Transistor Transistor Short Form Data Scan PDF
2N5303 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N5303 General Diode Transistor Selection Guide Scan PDF
2N5303 General Electric High current, high power, high speed N-P-N power transistor. 80V, 200W. - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Scan PDF
2N5303 General Transistor Power Transistor Selection Guide Scan PDF
2N5303 Mospec POWER TRANSISTORS(200W) - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Scan PDF
2N5303 Mospec NPN Silicon High-Power Transistor Scan PDF
2N5303 Motorola The European Selection Data Book 1976 Scan PDF
2N5303 Motorola European Master Selection Guide 1986 Scan PDF
2N5303 Motorola Power Transistor Selection Guide Scan PDF
2N5303 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2N5303 Others Semiconductor Master Cross Reference Guide Scan PDF
2N5303 Others Shortform Electronic Component Datasheets Scan PDF

2N5303 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - 2N5302

Abstract: 2N5303 2n5302 transistor TRANSISTOR 2n5302 1000C 2N5302 JANTXV
Text: Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C 0 C , . Max. Unit 2N5302 2N5303 V(BR)CEO 60 80 2N5302 2N5303 ICEO 10 10 µAdc IEBO 5.0 µAdc 2N5302 2N5303 ICEX 5.0 5.0 µAdc 2N5302 2N5303 ICBO 5.0 5.0 , 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc 120101 Page 1 of 2 2N5302, 2N5303 JAN SERIES


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PDF MIL-PRF-19500/456 2N5302 2N5303 1000C O-204AA) 2N5302; 2N5302 2N5303 2n5302 transistor TRANSISTOR 2n5302 2N5302 JANTXV
1999 - 2N5302

Abstract: 2N5303 jantx 2n5302 adc ic 1000C
Text: TECHNICAL DATA 2N5302 JANTX, TXV 2N5303 JANTX, TXV MIL-PRF Processed per MIL-PRF , 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB PT 60 60 80 80 Vdc Vdc Vdc Adc Adc , 2N5302 2N5303 V(BR)CEO 60 80 2N5302 2N5303 ICEO 10 10 µAdc IEBO 5.0 µAdc 2N5302 2N5303 ICEX 5.0 5.0 µAdc 2N5302 2N5303 ICBO 5.0 5.0 µAdc OFF , / (978) Fax: (978) 689-0803 Vdc 03/98 REV: C Page 1 of 2 2N5302, 2N5303 JAN SERIES


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PDF 2N5302 2N5303 MIL-PRF-19500/456 2N5302 2N5303 1000C O-204-AA) 2N5302; jantx 2n5302 adc ic
2n5302

Abstract: 2N5301 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp
Text: VcEO(sus) = 80 Vdc (Min) @ lc = 200 mAdc ( 2N5303 ) · Low Collector-Emitter Saturation Voltage - VCE(sat) = °-75 Vd0 (Max) @ lc = 10 Ade (2N5301, 2N5302) 1.0 Vdc (Max) @ lc = 10 Ade ( 2N5303 ) · Excellent Safe Operating Area - 200 Watt dc Power Rating to 30 Vdc ( 2N5303 ) · Complements to PNP 2N4398, 2N4399 , 30 2N5302 60 60 30 7.5 200 1.14 -6 5 t o +200 2N5303 80 80 20 Unit Vdc Vdc Ade Ade Watts W , 3-54 Motorola Bipolar Power Transistor Device Data 2NS301 2N 5302 2N5303 ELECTRICAL


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PDF 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745 2N510 2N5301 2n5302 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp
2N5303

Abstract: 2n5302 2N530I 2N5302 EB 2N5301
Text: 2N5301 2N5302 2N5303 HIGH-POWER NPN SILICON TRANSISTORS 20 a n d 30 A M P E R E .FO R U SE IN P , ( 2N5303 ) PO W ER TRANSISTORS NPN SILICON 40-60-80 VOLTS 200 WATTS Low C o lle c to r -E m itte r , (Max) @ Ic = lOAdc ( 2N5303 ) E x c e lle n t S a fe O p e ra tin g A re a C o m p le m e n ts t o 200 W att dc Power Rating to 30 Vdc ( 2N5303 ) PNP 2N4398, 2N4399 a n d 2N5745 MAXIMUM RATINGS 2N5301 , 2N5303 80 80 20 Unit Vdc Vdc Ade Ade W atts W/°C "C Symbol " JC " CA Max 0.875 34 Unit "crw


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PDF 2N5301 2N5302 2N5303 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5303 2N530I 2N5302 EB
2n5301

Abstract: 2n5302 2n5303 200WATT TRANSISTOR 2n5302
Text: Collector-Emitter Sustaining Voltage - VcEO(sus) = 80 Vdc (Min) @ Iq = 200 mAdc ( 2N5303 ) Low Collector-Emitter Saturation Voltage - = ° '75 Vdc < Max) @ 'C = 10 Ade (2N5301, 2N5302) 1.0 Vdc (Max) @ lc = 10 Ade ( 2N5303 ) Excellent Safe Operating Area - 200 Watt dc Power Rating to 30 Vdc ( 2N5303 ) Complements to PN P 2N4398 , 'c Iß Pd 2N5301 40 40 30 2N5302 60 60 30 7.5 200 1.14 - 6 5 t o +200 2N5303 80 80 20 , , Inc. 1995 (M) MOTOROLA \ 2N5301 2N5302 2N5303 ELECTRICAL CHARACTERISTICS (T q = 2 5 °C


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PDF 2N5301/D 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745 2n5301 2n5302 2n5303 200WATT TRANSISTOR 2n5302
2N5301

Abstract: 2N5302 2N5303 2n53
Text: SavantIC Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power , VCBO Collector-base voltage 2N5302 VALUE 40 Open emitter 60 2N5303 Collector-emitter voltage 40 2N5302 Open base 2N5303 VEBO V 80 2N5301 VCEO UNIT Emitter-base voltage 60 V 80 Open collector 5 2N5301/5302 30 2N5303 20 IC , SavantIC Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power Transistors


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PDF 2N5301 2N5302 2N5303 2N4398/4399/5745 2N5301 2N5302 2N5303 2n53
2N5301

Abstract: 2N5303 2N5302 53-02V 2N5302 data sheet 2N5302 inchange
Text: Inchange Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power , 2N5302 NG S HA 2N5303 VCEO VEBO OND MIC E 2N5301 Collector-base voltage INC Collector-emitter voltage TOR UC CONDITIONS 2N5301 2N5302 Open emitter Open base 2N5303 , A Base current Tj V 30 2N5303 PD V 80 Collector current IB V 80 , 2N5302 2N5303 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL


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PDF 2N5301 2N5302 2N5303 2N4398/4399/5745 2N5302 2N5301 2N5303 53-02V 2N5302 data sheet 2N5302 inchange
2N5302

Abstract: 2N5303 jantx 2n5302
Text: , HIGH-POWER, TYPES 2N5302 AND 2N5303 , JAN, JANTX, JANTXV, AND JANS This specification is approved for use , W 2N5302 2N5303 PT (1) TA = +25C W V dc V dc V dc A dc A dc C C/W Max , 2N5303 Pulse response V dc Min Max 15 60 2N5303 V dc 2N5302 V dc 2N5303 V dc , 3041 Emitter - base cutoff current 3061 Collector - emitter cutoff current 2N5302 2N5303 3041 Collector - base cutoff current 2N5302 2N5303 3036 Base - emitter saturated voltage


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PDF MIL-PRF-19500/456E MIL-PRF-19500/456D 2N5302 2N5303, MIL-PRF-19500. 2N5303 jantx 2n5302
2N5302

Abstract: 2N5303 2N4398 2N4399 2N5301 2N5745 N5303
Text: .) @ lc = 10 A - 2N5303 , * Complements to PNP 2N4398.2N4399 and 2N5745 MAXIMUM RATINGS Characteristic Symbol 2N5301 2N5302 2N5303 Unit Collector-Emitter Voltage vCBO 40 60 80 V Collector-Emitter , \ 25 50 75 100 125 150 175 200 T c , TEMPERATURE)0 C) NPN 2N5301 2N5302 2N5303 20 AND 30 AMPERE NPN , G 1.38 1.62 H 29.90 30.40 1 16.64 17.30 J 3.88 4.36 K 10.67 11.18 2N5301, 2N5302, 2N5303 NPN , mA, lB = 0 ) 2N5301 2N5302 2N5303 ^CEO(SUS) 40 60 80 V Collector Cutoff Current ( VCE = 40 V, lB =


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PDF 2N5301, 2N5302 2N5303, 2N4398 2N4399 2N5745 2N5301 2N5303 2N5745 N5303
Not Available

Abstract: No abstract text available
Text: Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C 0 C , . Max. Unit 2N5302 2N5303 V(BR)CEO 60 80 2N5302 2N5303 ICEO 10 10 µAdc IEBO 5.0 µAdc 2N5302 2N5303 ICEX 5.0 5.0 µAdc 2N5302 2N5303 ICBO 5.0 , 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc 120101 Page 1 of 2 2N5302, 2N5303 JAN SERIES


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PDF MIL-PRF-19500/ 2N5302 2N5303 1000C O-204AA) 2N5302;
Not Available

Abstract: No abstract text available
Text: 9C-99 ?S27f l Fig. 3 Derating curves fo r 2N5301, 2N5302, and 2N5303. 2-39 — Typical dc beta characteristics as a function o f collector current fo r 2N5301, 2N5302, and 2N5303. , function o f collector current fo r 2N5301, 2N5302, and 2N5303. Fig. 7 — Typical storage-time , 2N5303. OSCILLOSCQPe 1 £20n r s Z > 10 K -2 V -J INPUT PULSE t f < 2 0 ft* P W - K > TO , File Number 1029 HARRIS SEMICOND SECTOR 2N5301, 2N5302, 2N5303 SbE ] > High-Current


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PDF 2N5301, 2N5302, 2N5303 43D2271 O-204AA 2N5302 2N5303
2001 - 2N5301

Abstract: 2N5302 2n5302 transistor 2N4398 2N4399 2N5303 2N5745
Text: ON Semiconductort 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use , VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc ( 2N5303 ) Low Collector­Emitter Saturation Voltage - VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc (2N5301, 2N5302) 1.0 Vdc (Max) @ IC = 10 Adc ( 2N5303 ) Excellent Safe Operating Area - 200 Watt dc Power Rating to 30 Vdc ( 2N5303 ) Complements to PNP 2N4398, 2N4399 , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS Rating Symbol 2N5301 2N5302 2N5303 Unit VCEO 40 60


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PDF 2N5301 2N5302 2N5303 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5301 2N5302 2n5302 transistor 2N4398 2N5303 2N5745
2N5302

Abstract: 2N5303 MIL-PRF19500 2n5302 transistor
Text: , SILICON, HIGH-POWER TYPE 2N5302 and 2N5303 , JAN, JANTX, JANTXV, AND JANS This specification is approved , 7.5 30 20 -65 to +200 -65 to +200 0.875 0.875 2N5302 2N5303 1/ Derate linearly , 2N5303 V dc Min Max Pulse response 15 60 15 60 2N5302 V dc 2 40 1.8 2N5303 2N5302 2N5303 V dc V dc V dc 2 1 1.5 ton toff pF µs µs 800 1.1 3.0 , 2N5302 2N5303 60 80 V dc V dc ICEO 10.0 µA dc Bias condition D; VEB = 5 V dc


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PDF MIL-PRF-19500/456D MIL-S-19500/456C 2N5302 2N5303, MIL-PRF-19500. 2N5303 MIL-PRF19500 2n5302 transistor
2N5303

Abstract: SPT5303 75 watt npn switching transistor
Text:  2N5303 , SPT5303 gSllir/ll 200 WATT Solid State Devices Incorporated 14830 Valley View , 2N5303 SPT5303 Unit Collector-Emitter Voltage vCE0 80 100 Vdc Collector-Base Voltage VCB 80 100 Vdc , * 2N5303 BVCE0(sus)* 80 Vdc (lc= 200 mAdc, lB = 0 ) SPT5303 100 Collector Cutoff Current 'ceo mAdc (VCE= 80 Vdc, lB = 0 ) 2N5303 5 (Vc£= 100 Vdc, lB = 0 ) SPT5303 5 Collector Cutoff Current 'CEX mAdc 2N5303 1


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PDF 2N5303, SPT5303 TWX-910-583-4807 2N5303 SPT5303 300/js, 75 watt npn switching transistor
Not Available

Abstract: No abstract text available
Text: (Min) @ Iq = 200 mAdc ( 2N5303 ) Low C ollector-Em itter Saturation Voltage — V C E ( s a t) = 0 75 Vdc (Max) @ lc = 10 Ade (2N5301, 2N5302) 1.0 Vdc (Max) @ Iq = 10 Ade ( 2N5303 ) Excellent Safe Operating Area — 200 Watt dc Power Rating to 30 Vdc ( 2N5303 ) Complements to PNP 2N4398, 2N4399 and 2N5745 ‘ MAXIMUM RATINGS Rating Symbol 2N5301 2N5302 2N5303 Unit VCEO 40 60 , Derating Curve >M otorola, Inc. 1995 fM) MOTOROLA 2N5301 2N5302 2N5303 ELECTRICAL CHARACTERISTICS


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PDF 2N5301/D 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745
2N5301

Abstract: 2N5302 2N5303 RCA-2N5301
Text: collector current for 2N5301. 2N5302, and 2N5303. INPUT PULSE tr & 20 ni P.W.'IOTOIOOm» OC «2% Fig. 8 â , , and 2N5303. 391 , Power Transistors_ 2N5301, 2N5302, 2N5303 File Number 1029 High-Current High-Power High-Speed N-P-N , capability TERMINAL DESIGNATIONS JEDEC TO-2Q4AA The RCA-2N5301, 2N5302 and 2N5303 are epitaxial-base , . MAXIMUM RATINGS, Absolute-Maximum Values: 2N5301 2N5302 2N5303 • VCBO


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PDF 2N5301, 2N5302, 2N5303 RCA-2N5301, 2N5302 2NB301, 2NS303. 2N5301 RCA-2N5301
2N5303

Abstract: 2N5301 2N5302 2N4398 2N4399 2N5745 2N5301-3 n439
Text: Symbol Parameter PNP 2N5301 2N5302 2N5303 Unit NPN 2N4398 2N4399 2N5745 VcEO Collector-emitter , 60 V for 2N5745, 2N5303 80 V hFE* DC Current Gain lc = 1A Vce = 2 V 40 for 2N5745, 2N5303 lc = 10 A Vce = 2 V 15 60 lc = 20 A Vce = 2 V 5 for 2N4398/99, 2N5301/2 , = 10 A ib = 1 A Voltage for 2N4398/99, 2N5301/2 0.75 V for 2N5745, 2N5303 1 V lc = 15 A I b = 1.5 A for 2N4398/99, 2N5301/2 1 V for 2N5745, 2N5303 1.5 V lc = 20


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PDF 2N5301/02/03 2N4398/99/5745 2N5301/2/3, 2N4398/99 2N5745 2N5301 2N5302 2N5303 2N4398 2N4399 2N5301-3 n439
1995 - 108 motorola transistor

Abstract: 2N5301 2N5302 2N4398 2N4399 2N5303 2N5745
Text: to + 200 _C Symbol 2N5301 2N5302 2N5303 Unit VCEO 40 60 80 Vdc , · High Collector­Emitter Sustaining Voltage - VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc ( 2N5303 ) · , ) VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc ( 2N5303 ) · Excellent Safe Operating Area - 200 Watt dc Power Rating to 30 Vdc ( 2N5303 ) · Complements to PNP 2N4398, 2N4399 and 2N5745 20 AND 30 AMPERE POWER , circuits applications. High-Power NPN Silicon Transistors 2N5301 2N5302 2N5303 SEMICONDUCTOR


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PDF 2N5301/D* 2N5301/D 108 motorola transistor 2N5301 2N5302 2N4398 2N4399 2N5303 2N5745
2N5301

Abstract: 2N5303 2N4398 2N4399 2N5302 2N6303 TRANSISTOR 2n5302 2n5302 transistor
Text: 5 2N5301,2N5302, 2N5303 N-P-N SILICON POWER TRANSISTORS FEBRUARY 1969 - REVISED OCTOBER 1984 , Collector Current (2N5301, 2N5302) 20 A Continuous Collector Current ( 2N5303 ) 50 A Peak Collector Current , ~70PTÔ>-62C 36594 D T" 33-/S- 2N5301,2N5302, 2N5303 N-P-N SILICON POWER TRANSISTORS electrical , 2N5303 UNIT MIN TYP MAX MIN TYP MAX MIN TYP MAX vIBR)CEO lc = 0.2 A, Ib = 0, See Note 5 40 60 80 V , –9&1726 TEXAS INSTR (OPTO) 62C 36595 T-3S-/S- 2N5301,2N5302, 2N5303 N-P-N SILICON POWER TRANSISTORS INPUT


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PDF 9S1726 2N5301 2N5302 2N5303 2N4398, 2N4399 2N5301, 2N5302) 2N5303) 2N4398 2N4399 2N6303 TRANSISTOR 2n5302 2n5302 transistor
2N5302

Abstract: No abstract text available
Text: V ce = rated V qeo lc = 200 mA for 2N4398, 2N5301 for 2N4399, 2N5302 for 2N5745, 2N5303 > lc = 15 A I b = 1.5 A for 2N4398/99, 2N5301/2 for 2N5745, 2N5303 lG = 20 A lB = 2 A for 2N4398/99, 2N5301/2 lc = 20 A lc = 4 A for 2N5745, 2N5303 S T 7 SGS-THOMSON “ ■! 1 Typ. 40 60 80 lG = 10 A lB = 1 A for 2N4398/99, 2N5301/2 for 2N5745, 2N5303 lc ° 15 A I b = 1.5 A for 2N4398/99, 2N5301/2 for 2N5745, 2N5303 lc = 20 A lB = 2 A for 2N4398/99, 2N5301/2 lc =


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PDF 2N5301/02/03 2N4398/99/5745 2N5301/2/3, 2N4398/99 2N5745 2N5301 2N5302 2N5745 2N5301/2/3-2N4398/99-2N5745 GQS1334
fu 5303

Abstract: 4410b
Text: File Num ber 1029 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power T , DESIGNATIONS JEDEC TO-204AA The 2N5301, 2N5302 and 2N5303 are epitaxial-base silicon fi-p-n transistors , JS-6 RDF-2230 2-37 POWER TRANSISTORS 2N5301, 2N5302, 2N5303 ELECTRICAL CHARACTERISTICS , CURRENT Adc ·c *B 2N5301 Min. - LIMITS 2N5302 Min. Max. - 2N5303 Min. - UNITS Max. 1 1 10 5 , .8 % 2-38 2N5301, 2N5302, 2N5303 9 2 C S -2 9 7 9 7 Fig. 1 - M a xim um op e ra


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PDF 2N5301, 2N5302, 2N5303 O-204AA 2N5302 2N5303 fu 5303 4410b
2IM5301

Abstract: CE 5302
Text: INSTR 2N5303 N-P-N SILICON POWER TRANSISTORS FEBRUARY 1 9 , ( 2N5303 ) 50 A Peak Collector Current M in f r of 2 M H z at 10 V, 1 A Suitable for Use in Power Amplifier , Ô T 62C 36594 D 7 r ' 3 3 - / s - 2N5301,2N5302, 2N5303 N-P-N SILICON POWER , &1726 TEXAS I N S T R (OPTO) 62C 36595 T-3S-/S" 2N5301,2N5302, 2N5303 N-P-N SILICON POWER , T O ) 62C 36596 T - 33-/52N5301,2N5302, 2N5303 N-P-N SILICON POWER TRANSISTORS TYPICAL


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PDF 2N5301 2N5302 2N5303 2N4398, 2N4399 2IM5301, 2N5302) 2N5303) T-33-/S2N5301 2IM5301 CE 5302
Not Available

Abstract: No abstract text available
Text: 2N5301, 2N5302, 2N5303 File Number 1029 High-Current High-Power High-Speed N-P-N Power , and 2N5303 are epitaxial-base silicon n-p-n transistors intended for a wide variety of highpower , General-Purpose Power Transistors 2N5301, 2N5302, 2N5303 ELECTRICAL CHARACTERISTICS, at , - _ _ 1.7 3 1.7 1.8 2.5 _ 60 _ 1 1 10 5 5 2N5303 Min. 40 15 _ 5 80 _ _ _ _ _ _ UNITS Max. 1 1 , . 01E 17386 D General-Purpose Power Transistors 2N5301, 2N5302, 2N5303 ·1 0 * ·


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PDF 0G173fii( 2N5301, 2N5302, 2N5303 TQ-204AA RCA-2N5301, 2N5302 2N5303 2N53Q2, 2NS303.
2N5302

Abstract: TIP 22 transistor TIP 110 transistor TIP 122 transistor APPLICATION circuit TIP 41 transistor 2N5301 2N4398 transistor tip 3055 transistor tip 5530 TIP 122 transistor
Text: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR , -A Rated Continuous Collector Current ( 2N5303 ) Min fT of 2 MHz at 10 V, 1 A 'mechanical data The case , temperature (unless otherwise noted) 2N5301 2N5302 2N5303 "Collector-Base Voltage , mW/deg. * Indicates JEDEC registered d.sta Texas Instruments 2-371 TYPES 2N5301, 2N5302, 2N5303 , TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS thermal characteristics


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PDF 2N5301, 2N5302, 2N5303 2N5302 2N4398, 2N4399 2N5302) 2N5303) TIP 22 transistor TIP 110 transistor TIP 122 transistor APPLICATION circuit TIP 41 transistor 2N5301 2N4398 transistor tip 3055 transistor tip 5530 TIP 122 transistor
2N5301

Abstract: No abstract text available
Text: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS 3 J CD H FOR , 2N5303 ` Collector-Base V o lta g e , fc · 1 5.2ii TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS ` , , 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS thermal characteristics | 1 PA R A M , 2 2 2 5-213 TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS TYP


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PDF 2N5301, 2N5302, 2N5303 2N5302 2N4398, 2N4399 2N5302) 2NS303) 2N5301
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