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2N5302 SSI Bristol Electronics 49 - -
2N5302 Microchip Technology Inc Avnet - $49.39 $44.09
2N5302 Motorola Semiconductor Products Bristol Electronics 2 - -
2N5302 Texas Instruments Bristol Electronics 2 - -
2N5302 Mospec Semiconductor Corp Bristol Electronics 45 $3.36 $1.68
2N5302 RCA Bristol Electronics 11 - -
2N5302 Motorola Semiconductor Products Bristol Electronics 8 $3.36 $3.36
2N5302 ON Semiconductor Rochester Electronics 89 $2.88 $2.34
2N5302G ON Semiconductor Future Electronics - $3.46 $2.65
2N5302G ON Semiconductor Farnell element14 137 £3.62 £1.93
2N5302G ON Semiconductor Rochester Electronics 2,845 $3.33 $2.71
2N5302G ON Semiconductor Avnet - $4.38 $2.75
2N5302G ON Semiconductor Newark element14 137 $4.38 $2.75
2N5302G ON Semiconductor element14 Asia-Pacific 137 $5.54 $2.68
2N5302G ON Semiconductor Chip1Stop 100 $3.35 $2.73
2N5302G ON Semiconductor Newark element14 300 $4.38 $2.75
2N5302G ON Semiconductor Avnet - $2.09 $1.99
2N5302JAN Microchip Technology Inc Avnet - $368.89 $307.09
2N5302JANTX Microchip Technology Inc Avnet - $368.89 $307.09
2N5302JANTXV Microchip Technology Inc Avnet - - -
JANTX2N5302 . Bristol Electronics 3 $72.00 $72.00
JANTX2N5302 Microsemi Corporation Chip1Stop 107 $175.18 $172.16

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2N5302 datasheet (54)

Part Manufacturer Description Type PDF
2N5302 Microsemi NPN Transistor Original PDF
2N5302 Motorola 30A NPN SILICON POWER TRANSISTOR 60V 200W Original PDF
2N5302 On Semiconductor High-Power NPN Silicon Transistor - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original PDF
2N5302 On Semiconductor High-Power NPN Silicon Transistor Original PDF
2N5302 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original PDF
2N5302 Wing Shing Computer Components NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original PDF
2N5302 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
2N5302 API Electronics 25 AMPS / 30 AMPS NPN Transistors Scan PDF
2N5302 Diode Transistor Transistor Short Form Data Scan PDF
2N5302 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
2N5302 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N5302 General Diode Transistor Selection Guide Scan PDF
2N5302 General Electric High current, high power, high speed N-P-N power transistor. 60V, 200W. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Scan PDF
2N5302 General Transistor Power Transistor Selection Guide Scan PDF
2N5302 Mospec POWER TRANSISTORS(200W) - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Scan PDF
2N5302 Mospec NPN Silicon High-Power Transistor Scan PDF
2N5302 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2N5302 Motorola The European Selection Data Book 1976 Scan PDF
2N5302 Motorola European Master Selection Guide 1986 Scan PDF
2N5302 Motorola Power Transistor Selection Guide Scan PDF

2N5302 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - 2N5302

Abstract: 2N5303 2n5302 transistor TRANSISTOR 2n5302 1000C 2N5302 JANTXV
Text: Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 , . Max. Unit 2N5302 2N5303 V(BR)CEO 60 80 2N5302 2N5303 ICEO 10 10 µAdc IEBO 5.0 µAdc 2N5302 2N5303 ICEX 5.0 5.0 µAdc 2N5302 2N5303 ICBO 5.0 5.0 , 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc 120101 Page 1 of 2 2N5302 , 2N5303 JAN SERIES , , VCE = 2.0 Vdc All Types IC = 15 Adc, VCE = 2.0 Vdc 2N5302 IC = 10 Adc, VCE = 2.0 Vdc 2N5303 IC =


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PDF MIL-PRF-19500/456 2N5302 2N5303 1000C O-204AA) 2N5302; 2N5302 2N5303 2n5302 transistor TRANSISTOR 2n5302 2N5302 JANTXV
1999 - 2N5302

Abstract: 2N5303 jantx 2n5302 adc ic 1000C
Text: TECHNICAL DATA 2N5302 JANTX, TXV 2N5303 JANTX, TXV MIL-PRF Processed per MIL-PRF , 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB PT 60 60 80 80 Vdc Vdc Vdc Adc Adc , 2N5302 2N5303 V(BR)CEO 60 80 2N5302 2N5303 ICEO 10 10 µAdc IEBO 5.0 µAdc 2N5302 2N5303 ICEX 5.0 5.0 µAdc 2N5302 2N5303 ICBO 5.0 5.0 µAdc OFF , / (978) Fax: (978) 689-0803 Vdc 03/98 REV: C Page 1 of 2 2N5302 , 2N5303 JAN SERIES


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PDF 2N5302 2N5303 MIL-PRF-19500/456 2N5302 2N5303 1000C O-204-AA) 2N5302; jantx 2n5302 adc ic
2N5303

Abstract: 2n5302 2N530I 2N5302 EB 2N5301
Text: 2N5301 2N5302 2N5303 HIGH-POWER NPN SILICON TRANSISTORS 20 a n d 30 A M P E R E .FO R U SE IN P , S a tu ra tio n V o lta g e ' C E ( s a t) = 0.75 Vdc (Max) @ Ic = lOAdc (2N5301, 2N5302 ) 1.0 Vdc , , Junction to Case Therm al Resistance, Junction to Case 40 40 30 2N5302 60 60 30 7.5 200 1.14 -65 to +200 , / FAX: (978)689-0803 T4-4.8-860-326 REV: - 2N5301 2N5302 2N5303 ELECTRICAL CHARACTERISTICS (Tc = 25 , 2N5301 2N5302 2N5303 I c eo 40 60 80 5.0 5.0 5.0 IcEX Collector Cutoff Current VCE = 40 Vdc, IR =


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PDF 2N5301 2N5302 2N5303 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5303 2N530I 2N5302 EB
2N5302

Abstract: 2N5303 jantx 2n5302
Text: , HIGH-POWER, TYPES 2N5302 AND 2N5303, JAN, JANTX, JANTXV, AND JANS This specification is approved for use , W 2N5302 2N5303 PT (1) TA = +25C W V dc V dc V dc A dc A dc C C/W Max , = 15 A dc IB = 1.5 A dc VCB = 10 V dc IE = 0 100 kHz f 1 MHz ton toff 2N5302 2N5303 Pulse response V dc Min Max 15 60 2N5303 V dc 2N5302 V dc 2N5303 V dc pF s s 2 40 15 60 2N5302 V dc 1.8 2 1 1.5 800 1.1 3.0 (1


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PDF MIL-PRF-19500/456E MIL-PRF-19500/456D 2N5302 2N5303, MIL-PRF-19500. 2N5303 jantx 2n5302
2n5302

Abstract: 2N5301 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp
Text: 2N53022N53031.0 2.0 3.0 5.0 10 20 I H k lK I iM Ik ' 30 50 100 V c e , COLLECTOR-EMITTER VOLTAGE (VOLTS , ) = °-75 Vd0 (Max) @ lc = 10 Ade (2N5301, 2N5302 ) 1.0 Vdc (Max) @ lc = 10 Ade (2N5303) · Excellent , 30 2N5302 60 60 30 7.5 200 1.14 -6 5 t o +200 2N5303 80 80 20 Unit Vdc Vdc Ade Ade Watts W , Sustaining Voltage (Note 1) (1C - 200 mAdc, Ib - 0) VCEO(sus) 2N5301 2N5302 2N5303 'CEO 2N5301 2N5302 2N5303 'CEX 2N5301 2N5302 2N5303 'CEX 2N5301 2N5302 2N5303 ICBO 2N5301 2N5302 2N5303 'EBO 40 60 60 Symbol Min


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PDF 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745 2N510 2N5301 2n5302 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp
2n5301

Abstract: 2n5302 2n5303 200WATT TRANSISTOR 2n5302
Text: Saturation Voltage - = ° '75 Vdc < Max) @ 'C = 10 Ade (2N5301, 2N5302 ) 1.0 Vdc (Max) @ lc = 10 Ade (2N5303 , 'c Iß Pd 2N5301 40 40 30 2N5302 60 60 30 7.5 200 1.14 - 6 5 t o +200 2N5303 80 80 20 , , Inc. 1995 (M) MOTOROLA \ 2N5301 2N5302 2N5303 ELECTRICAL CHARACTERISTICS (T q = 2 5 °C , Voltage (Note 1) (Iq = 200 mAdc, lg = 0) Symbol Min Max Unit VCEO(sus) 2N5301 2N5302 2N5303 ICEO 2N5301 2N5302 2N5303 'CEX 2N5301 2N5302 2N5303 'CEX 2N5301 2N5302 2N5303 ICBO 2N5301 2N5302 2N5303


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PDF 2N5301/D 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745 2n5301 2n5302 2n5303 200WATT TRANSISTOR 2n5302
2N5302

Abstract: 2N5303 2N4398 2N4399 2N5301 2N5745 N5303
Text: Collector-Emitter Saturation Voltage - vCE(«at)= 0 75 v (Max) @ lc = 10 A - 2N5301, 2N5302 vCH«at) = 1 0 V (Max , Characteristic Symbol 2N5301 2N5302 2N5303 Unit Collector-Emitter Voltage vCBO 40 60 80 V Collector-Emitter , \ 25 50 75 100 125 150 175 200 T c , TEMPERATURE)0 C) NPN 2N5301 2N5302 2N5303 20 AND 30 AMPERE NPN , G 1.38 1.62 H 29.90 30.40 1 16.64 17.30 J 3.88 4.36 K 10.67 11.18 2N5301, 2N5302 , 2N5303 NPN , mA, lB = 0 ) 2N5301 2N5302 2N5303 ^CEO(SUS) 40 60 80 V Collector Cutoff Current ( VCE = 40 V, lB =


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PDF 2N5301, 2N5302 2N5303, 2N4398 2N4399 2N5745 2N5301 2N5303 2N5745 N5303
Not Available

Abstract: No abstract text available
Text: Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 , . Max. Unit 2N5302 2N5303 V(BR)CEO 60 80 2N5302 2N5303 ICEO 10 10 µAdc IEBO 5.0 µAdc 2N5302 2N5303 ICEX 5.0 5.0 µAdc 2N5302 2N5303 ICBO 5.0 , 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc 120101 Page 1 of 2 2N5302 , 2N5303 JAN SERIES , , VCE = 2.0 Vdc All Types IC = 15 Adc, VCE = 2.0 Vdc 2N5302 IC = 10 Adc, VCE = 2.0 Vdc 2N5303 IC =


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PDF MIL-PRF-19500/ 2N5302 2N5303 1000C O-204AA) 2N5302;
2N5302

Abstract: 2N5303 MIL-PRF19500 2n5302 transistor
Text: , SILICON, HIGH-POWER TYPE 2N5302 and 2N5303, JAN, JANTX, JANTXV, AND JANS This specification is approved , 7.5 30 20 -65 to +200 -65 to +200 0.875 0.875 2N5302 2N5303 1/ Derate linearly , IC = 1 A dc f = 1 MHz IB = 1.5 A dc IB = 1.5 A dc IE = 0 100 kHz f 1 MHz 2N5302 2N5303 V dc Min Max Pulse response 15 60 15 60 2N5302 V dc 2 40 1.8 2N5303 2N5302 2N5303 V dc V dc V dc 2 1 1.5 ton toff pF µs µs 800 1.1 3.0


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PDF MIL-PRF-19500/456D MIL-S-19500/456C 2N5302 2N5303, MIL-PRF-19500. 2N5303 MIL-PRF19500 2n5302 transistor
2001 - 2N5301

Abstract: 2N5302 2n5302 transistor 2N4398 2N4399 2N5303 2N5745
Text: ON Semiconductort 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use , ) = 0.75 Vdc (Max) @ IC = 10 Adc (2N5301, 2N5302 ) 1.0 Vdc (Max) @ IC = 10 Adc (2N5303) Excellent , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS Rating Symbol 2N5301 2N5302 2N5303 Unit VCEO 40 60 , = 4.0 Vdc) (IC = 30 Adc, VCE = 4.0 Vdc) 2N5303 2N5301, 2N5302 2N5303 2N5301, 2N5302 5.0 , 2.0 2.0 3.0 - - - - - ALL TYPES 2N5301, 2N5302 2N5303 2N5301, 2N5302 2N5303 -


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PDF 2N5301 2N5302 2N5303 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5301 2N5302 2n5302 transistor 2N4398 2N5303 2N5745
2004 - Not Available

Abstract: No abstract text available
Text: 2N5302 High-Power NPN Silicon Transistor · ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Î ÎÎÎÎ ÎÎ , 2N5302 60 60 30 Unit Vdc Vdc Adc Adc Collector Current - Continuous (Note 1) Base Current 7.5 Total , 2N5302 AYYWW TA TC 8.0 200 PD, POWER DISSIPATION (WATTS) A YY WW = Location Code = Year = Work Week , 2.0 50 2N5302 0 0 0 20 40 60 80 100 120 140 TEMPERATURE (°C) 160 180 , 1 December, 2004 - Rev. 1 Publication Order Number: 2N5302 /D


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PDF 2N5302 2N5302/D
Not Available

Abstract: No abstract text available
Text: storage-time (b) measurements fo r 2NS301 , 2N5302. and 2NS303. 2-40 HAS , File Number 1029 HARRIS SEMICOND SECTOR 2N5301, 2N5302 , 2N5303 SbE ] > High-Current , capability POWER TRANSISTORS JEDEC TO-204AA The 2N5301, 2N5302 and 2N5303 are epitaxial-base , . 2N5302 60 60 2N5303 80 80 5 30 50 7.5 15 V V V A A A A * Pt AtTc < 2 , HARRIS SEMICOND SECTOR SbE D ■43D2271 OOMOMbO DTT « H A S 2N5301, 2N5302 , 2N5303


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PDF 2N5301, 2N5302, 2N5303 43D2271 O-204AA 2N5302 2N5303
2N5301

Abstract: 2N5302 2N5303 2n53
Text: SavantIC Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power , VCBO Collector-base voltage 2N5302 VALUE 40 Open emitter 60 2N5303 Collector-emitter voltage 40 2N5302 Open base 2N5303 VEBO V 80 2N5301 VCEO UNIT , SavantIC Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power Transistors , ) Collector-emitter sustaining voltage 2N5302 2N5301/5302 Collector-emitter saturation voltage VCEsat


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PDF 2N5301 2N5302 2N5303 2N4398/4399/5745 2N5301 2N5302 2N5303 2n53
2N5301

Abstract: 2N5303 2N4398 2N4399 2N5302 2N6303 TRANSISTOR 2n5302 2n5302 transistor
Text: 5 2N5301, 2N5302 ,2N5303 N-P-N SILICON POWER TRANSISTORS FEBRUARY 1969 - REVISED OCTOBER 1984 , Collector Current (2N5301, 2N5302 ) 20 A Continuous Collector Current (2N5303) 50 A Peak Collector Current , temperature (unless otherwise noted) 2N5301 2N5302 2N6303 'Collector-base voltage 40 V 60 V 80 V , ~70PTÔ>-62C 36594 D T" 33-/S- 2N5301, 2N5302 ,2N5303 N-P-N SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS 2N5301 2N5302


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PDF 9S1726 2N5301 2N5302 2N5303 2N4398, 2N4399 2N5301, 2N5302) 2N5303) 2N4398 2N4399 2N6303 TRANSISTOR 2n5302 2n5302 transistor
2N5301

Abstract: 2N5303 2N5302 53-02V 2N5302 data sheet 2N5302 inchange
Text: Inchange Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power , 2N5302 NG S HA 2N5303 VCEO VEBO OND MIC E 2N5301 Collector-base voltage INC Collector-emitter voltage TOR UC CONDITIONS 2N5301 2N5302 Open emitter Open base 2N5303 , 2N5302 2N5303 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5301 VCEO(SUS) Collector-emitter sustaining voltage 2N5302 VCEsat


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PDF 2N5301 2N5302 2N5303 2N4398/4399/5745 2N5302 2N5301 2N5303 53-02V 2N5302 data sheet 2N5302 inchange
Not Available

Abstract: No abstract text available
Text: Vdc (Max) @ lc = 10 Ade (2N5301, 2N5302 ) 1.0 Vdc (Max) @ Iq = 10 Ade (2N5303) Excellent Safe , 2N5745 ‘ MAXIMUM RATINGS Rating Symbol 2N5301 2N5302 2N5303 Unit VCEO 40 60 , Derating Curve >M otorola, Inc. 1995 fM) MOTOROLA 2N5301 2N5302 2N5303 ELECTRICAL CHARACTERISTICS , ) 2N5301 2N5302 2N5303 Collector Cutoff Current (VCE = 40 Vdc, lB = 0) (V q e = 60 Vdc, I b = 0) (V q e = 80 Vdc, lg = 0) 40 60 80 'CEO 2N5301 2N5302 2N5303 'CEX 2N5301 2N5302 2N5303


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PDF 2N5301/D 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745
2001 - TRANSISTOR 2n5302

Abstract: 2N5302
Text: ON Semiconductort High-Power NPN Silicon Transistor 2N5302 . . . for use in power , VCEO Collector­Emitter Voltage 2N5302 60 Vdc Collector Current ­ Continuous IC 30 , © Semiconductor Components Industries, LLC, 2001 May, 2001 ­ Rev. 0 1 Publication Order Number: 2N5302 /D , noted) 2N5302 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2N5302 1.0 0.7 0.5 , , CAPACITANCE (pF) 20 dc TJ = 25°C 1000 Cib 500 200 2N5302 0.2 0.1 1.0 50 2.0 3.0 5.0


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PDF 2N5302 r14525 2N5302/D TRANSISTOR 2n5302 2N5302
2N5301

Abstract: 2N5302 2N5303 RCA-2N5301
Text: Power Transistors_ 2N5301, 2N5302 , 2N5303 File Number 1029 High-Current High-Power High-Speed N-P-N , capability TERMINAL DESIGNATIONS JEDEC TO-2Q4AA The RCA-2N5301, 2N5302 and 2N5303 are epitaxial-base , . MAXIMUM RATINGS, Absolute-Maximum Values: 2N5301 2N5302 2N5303 • VCBO , 2N5301, 2N5302 , 2N5303 ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc) =2S°C unless otherwise , 2N5301 2N5302 2N5303 VCE VBE 'c >B Min. Max. Min. Max. Min. Max. 40a _ 1 _ - _ - 'CBO 60a


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PDF 2N5301, 2N5302, 2N5303 RCA-2N5301, 2N5302 2NB301, 2NS303. 2N5301 RCA-2N5301
2006 - 2n5302 transistor

Abstract: 2N5302 2N5302G MS5302
Text: 2N5302 High-Power NPN Silicon Transistor High-power NPN silicon transistors are for use in power , Cycle 10%. 2N5302G AYYWW MEX PD, POWER DISSIPATION (WATTS) TA TC 8.0 200 6.0 150 TC 4.0 100 TA 2.0 50 0 0 2N5302 G A YY WW MEX 0 20 40 60 80 100 , Temperature Derating Curve 2N5302 *For additional information on our Pb-Free strategy and soldering , = Pb-Free Package = Location Code = Year = Work Week = Country of Origin 2N5302G Package


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PDF 2N5302 2N5302/D 2n5302 transistor 2N5302 2N5302G MS5302
2006 - Not Available

Abstract: No abstract text available
Text: 2N5302 High−Power NPN Silicon Transistor High−power NPN silicon transistors are for use in , : Pulse Width = 5 ms, Duty Cycle ≤ 10%. 2N5302G AYYWW MEX PD, POWER DISSIPATION (WATTS) TA TC 8.0 200 6.0 150 TC 4.0 100 TA 2.0 50 0 0 2N5302 G A YY WW MEX 0 20 , Figure 1. Power Temperature Derating Curve 2N5302 *For additional information on our Pb−Free , 2N5302G Package Shipping TO−204 100 Units/Tray TO−204 (Pb−Free) 100 Units/Tray


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PDF 2N5302 2N5302/D
1995 - 108 motorola transistor

Abstract: 2N5301 2N5302 2N4398 2N4399 2N5303 2N5745
Text: to + 200 _C Symbol 2N5301 2N5302 2N5303 Unit VCEO 40 60 80 Vdc , Low Collector­Emitter Saturation Voltage - VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc (2N5301, 2N5302 , circuits applications. High-Power NPN Silicon Transistors 2N5301 2N5302 2N5303 SEMICONDUCTOR , Vdc) *(IC = 30 Adc, VCE = 4.0 Vdc) ALL TYPES 2N5303 2N5301, 2N5302 2N5303 2N5301, 2N5302 , Adc) 2N5301, 2N5302 2N5303 2N5303 2N5301, 2N5302 2N5303 2N5301, 2N5302 *Base Emitter


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PDF 2N5301/D* 2N5301/D 108 motorola transistor 2N5301 2N5302 2N4398 2N4399 2N5303 2N5745
fu 5303

Abstract: 4410b
Text: File Num ber 1029 2N5301, 2N5302 , 2N5303 High-Current High-Power High-Speed N-P-N Power T , DESIGNATIONS JEDEC TO-204AA The 2N5301, 2N5302 and 2N5303 are epitaxial-base silicon fi-p-n transistors , JS-6 RDF-2230 2-37 POWER TRANSISTORS 2N5301, 2N5302 , 2N5303 ELECTRICAL CHARACTERISTICS , CURRENT Adc ·c *B 2N5301 Min. - LIMITS 2N5302 Min. Max. - 2N5303 Min. - UNITS Max. 1 1 10 5 , .8 % 2-38 2N5301, 2N5302 , 2N5303 9 2 C S -2 9 7 9 7 Fig. 1 - M a xim um op e ra


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PDF 2N5301, 2N5302, 2N5303 O-204AA 2N5302 2N5303 fu 5303 4410b
2N5302

Abstract: TIP 22 transistor TIP 110 transistor TIP 122 transistor APPLICATION circuit TIP 41 transistor 2N5301 2N4398 transistor tip 3055 transistor tip 5530 TIP 122 transistor
Text: N 2N5302'' , TYPES 2N5301, 2N5302 , 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 2N5301, 2N5302 DESIGNED FOR COMPLEMENTARY USE WITH 2N4398, 2N4399 200 W at 25°C Case Temperature :iO-A Rated Continuous Collector Current (2N5301, 2N5302 ) 20 , temperature (unless otherwise noted) 2N5301 2N5302 2N5303 "Collector-Base Voltage


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PDF 2N5301, 2N5302, 2N5303 2N5302 2N4398, 2N4399 2N5302) 2N5303) TIP 22 transistor TIP 110 transistor TIP 122 transistor APPLICATION circuit TIP 41 transistor 2N5301 2N4398 transistor tip 3055 transistor tip 5530 TIP 122 transistor
2N5301

Abstract: 2N5302 2N5301-1
Text: (213) 921-9660 TWX -910-583-4807 2N5301 2N5302 200 WATT NPN SILICON POWER TRANSISTOR X 00^5,s , usee Rise Time • Excellent Safe Operating Area MAXIMUM RATINGS Rating Symbol 2N5301 2N5302 Unit , Collector-Emitter Sustaining Voltage* 2N5301 BVCE0(sus)* 40 Vdc (lc = 200 mAdc, lB= 0 ) 2N5302 60 Collector Cutoff Current 2N5301 'ceo 5 mAdc (VCE = 40 Vdc, lB= 0 ) 2N5302 5 (VCE = 60 Vdc, lB = 0 , 1.5 Vdc) 2N5302 (VCE= 40 Vdc, VEB(off)= 1.5 Vdc,Tc= 150°C) 2N5301 10 (VCE= 60 Vdc, VEB(off


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PDF 2N5301 2N5302 2N5302 2N5301-1
Not Available

Abstract: No abstract text available
Text: 2N5301, 2N5302 , 2N5303 File Number 1029 High-Current High-Power High-Speed N-P-N Power , dis s ip a tio n c a p a b ility TERMINAL DESIGNATIONS JEDEC TQ-204AA The RCA-2N5301, 2N5302 , General-Purpose Power Transistors 2N5301, 2N5302 , 2N5303 ELECTRICAL CHARACTERISTICS, at , _ 3 1.7 1.8 2.5 - _ _ _ - 10 0.75 2 - 3 _ 60 Max. 1 1 10 5 5 LIMITS 2N5302 Min. Max. 40 15 _ 5 60 , . 01E 17386 D General-Purpose Power Transistors 2N5301, 2N5302 , 2N5303 ·1 0 * ·


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PDF 0G173fii( 2N5301, 2N5302, 2N5303 TQ-204AA RCA-2N5301, 2N5302 2N5303 2N53Q2, 2NS303.
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