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2N5109 Microsemi Corporation RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-39, M246, 3 PIN
2N5109 Central Semiconductor Corp RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-39, HERMETIC SEALED PACKAGE-3
2N5109 LEAD FREE Central Semiconductor Corp TRANS RF NPN 20V 400MA TO-39
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2N5109 Motorola Semiconductor Products Bristol Electronics 13 $3.36 $2.18
2N5109 Advanced Semiconductor Inc Bristol Electronics 8 $3.36 $3.36
2N5109 STMicroelectronics Bristol Electronics 7 $3.36 $3.36
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CP214-2N5109-CT Central Semiconductor Corp Avnet - - -
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2N5109 datasheet (56)

Part Manufacturer Description Type PDF
2N5109 Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original PDF
2N5109 Advanced Semiconductor NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
2N5109 Central Semiconductor Small Signal Transistors Original PDF
2N5109 Central Semiconductor RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 20V 400MA TO-39 Original PDF
2N5109 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original PDF
2N5109 Semico NPN transistor Original PDF
2N5109 Semico Chip: geometry 1007 polarity NPN Original PDF
2N5109 SunLED USA silicon transistors UHF/VHF power transistors Original PDF
2N5109 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
2N5109 Bharat Electronics UHF / VHF RF Transistors Scan PDF
2N5109 Diode Transistor NPN Small Signal Transistors Scan PDF
2N5109 Diode Transistor SMALL SIGNAL TRANSISTORS Scan PDF
2N5109 General Transistor Transistors for RF Applications Scan PDF
2N5109 Motorola The European Selection Data Book 1976 Scan PDF
2N5109 Motorola European Master Selection Guide 1986 Scan PDF
2N5109 Motorola Power Transistor Selection Guide Scan PDF
2N5109 Others Semiconductor Master Cross Reference Guide Scan PDF
2N5109 Others Shortform Electronic Component Datasheets Scan PDF
2N5109 Others Shortform Transistor Datasheet Guide Scan PDF
2N5109 Others Vintage Transistor Datasheets Scan PDF

2N5109 Datasheets Context Search

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2N5109

Abstract: rca 2N5109 RCA-2N5109 TA2800 2n5109 rca CF-102-Q1 IN5109 transistor 2N5109 field strength meter 04 transistor
Text: dBmV = 1 millivolt * In accordance with JEDEC registration data 119 2N5109-File IMo. 281 j50 Fig.2-input reflection coefficient (Sj je) vs. frequency for type 2N5109. COLLECTOR-TO-EMITTER VOLTS (VCE) = 15 CASE , . 1 -Gain-bandwidth i/s. collector current for type 2N5109. ¡0 I40 92LS-2I6BR2 118 11-73 File No , -Magnitude of common-emitter forward transfer coefficient (S21e) vs- frequency for type 2N5109. 0 0.2 0.4 0.6 , ($21 eI frequency for type 2N5109. 120 File No. 281 2N5109 j 250 - j250 - j I50 -j50 92SS-4425


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PDF 2N5109 RCA-2N5109* 2N5109 TA2800. rca 2N5109 RCA-2N5109 TA2800 2n5109 rca CF-102-Q1 IN5109 transistor 2N5109 field strength meter 04 transistor
2010 - 2n5109

Abstract: transistor 2N5109
Text: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR. http://store.americanmicrosemiconductor.com/ 2n5109.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N5109 2N5109 RF & M IC RO WAVE DISC RETE LO W PO WER TRANSISTO RS Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2 , : Americanmicrosemi 2N5109 $ 2.24 Information Spec Sheets Tutorials Shipping FAQs $ 1.79 $ 0.45 Total Price


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PDF 2N5109 com/2n5109 2N5109 transistor 2N5109
2N5109 SGS

Abstract: 2n5109 Max17550 transistor Z2
Text: 3QE » 7^2=1237 Q 0 312E5 T ' T i 2 \*Z'2 > r = 7 S G S -T H O M S O N ^ 7 # ^ a oe @ |L i O r a ( ô ) [ M D O i Y T ^ s - thom son 2N5109 EPITAXIAL PLANAR NPN C A T V U L T R A -L IN E A R HIGH G AIN T R A N SISTO R The 2N5109 is a multi-emitter silicon planar epitaxial NPN , V A A W W °C 1/3 407 VcEO V ebo lc Ib Plot Tstg. Tj October 1988 2N5109 S G S -T H , Current Gain. 0Q 31227 3 2N5109 T-31-23 Power Gain vs. Collector Current. f =200MHz V ,= 1 5


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PDF 312E5 2N5109 2N5109 T-31-23 200MHz 2N5109 SGS Max17550 transistor Z2
2005 - 2n5109

Abstract: transistor 2N5109 2n5109 transistor transistor marking code AL VCE-15V NPN transistor marking NY chip die npn transistor
Text: 2N5109 SILICON NPN RF TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING CODE: FULL PART NUMBER TO , Corp. 2N5109 NPN RF TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) BASE 3 , GEOMETRY GROSS DIE PER 4 INCH WAFER 44,460 PRINCIPAL DEVICE TYPES 2N5109 B E EPITAXIAL PLANAR 16 x 16


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PDF 2N5109 CP214 2N5109 transistor 2N5109 2n5109 transistor transistor marking code AL VCE-15V NPN transistor marking NY chip die npn transistor
1999 - 2N5109

Abstract: transistor 2N5109 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ for transistor bfr96 2n5109 transistor
Text: (1) Derate above 25ºC Note 1. Total Device dissipation at TA = 25ºC is 1 Watt. 2N5109.PDF , Product (IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) 2N5109.PDF 3-10-99 Typ. Max. Unit - , .535 33 .246 140 1000 .655 95 1.02 9.8 .604 35 .320 122 2N5109.PDF , Plastic Package Options 1 1 1 8 2 1 4 2N5109.PDF 3-10-99 1 MACRO X RF (Low , General Purpose RF Discrete Selector Guide Power Macro SO-8 2N5109 2N5109.PDF 3-10-99


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PDF 2N5109 To-39 Volta12, 2N3866A MRF559 MRF904 MRF5943C 2N4427 MRF4427, 2N5109 transistor 2N5109 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ for transistor bfr96 2n5109 transistor
1999 - RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5109 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR C 10-12 GHZ transistor BFR91 RF NPN POWER TRANSISTOR 2.5 GHZ 2N6304 S-parameter 2N5179 UHF power TRANSISTOR PNP TO-39
Text: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · Silicon NPN, To-39 packaged VHF , 10-25-99 2N5109 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol Test Conditions , 1200 - MHz 2N5109 FUNCTIONAL Symbol Test Conditions Value Min. G U max MAG , MSC1304.PDF 10-25-99 2N5109 10 15 12 1200 3.4 30 15 11.4 1000 30 400 , (dB) NPN MRF5943C NF (dB) NF IC (mA) NF VCE 2N5109 TO-39 Type TO-39 400


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PDF 2N5109 To-39 2N3866A MRF559 MRF904 MRF5943C 2N4427 MRF4427, RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5109 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR C 10-12 GHZ transistor BFR91 RF NPN POWER TRANSISTOR 2.5 GHZ 2N6304 S-parameter 2N5179 UHF power TRANSISTOR PNP TO-39
2003 - 2N5109

Abstract: No abstract text available
Text: DATA SHEET 2N5109 NPN SILICON RF TRANSISTOR JEDEC TO-39 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Base , REVERSE SIDE) R1 2N5109 NPN SILICON RF TRANSISTOR TO-39 PACKAGE - MECHANICAL OUTLINE A B D C


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PDF 2N5109 200MHz 200MHz 2N5109
2011 - 2n5109

Abstract: Transistor 2N5109 VCE-15V
Text: 2N5109 SILICON NPN RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage , =15V, IC=10mA, f=200MHz VCE=15V, IC=50mA, f=200MHz 40 40 20 R4 (7-June 2011) 2N5109 SILICON NPN RF


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PDF 2N5109 100mA, 360mA 200MHz Transistor 2N5109 VCE-15V
2002 - RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2N5109 TRANSISTOR 12 GHZ
Text: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon NPN, To , dissipation at TA = 25ºC is 1 Watt. 053-7004 Rev - 9-2002 2N5109 ELECTRICAL SPECIFICATIONS (Tcase = 25 , 2N5109 FUNCTIONAL Symbol Test Conditions Min. Maximum Unilateral Gain (1) Maximum Available Gain , -30 -35 -46 -76 -94 -115 -145 176 140 122 053-7004 Rev - 9-2002 2N5109 RF Low Power PA, LNA , T MACRO T SO-8 MACRO X Macro TO-72 TO-72 MACRO X TO-39 2N5109 MRF5943C 2N5179 2N2857 MRF517


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PDF 2N5109 To-39 MRF545 MRF544 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 1000 WATT 2N5109 TRANSISTOR 12 GHZ
2004 - RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5109 2N5179 transistor 2n5109 MRF553 MRF559 MRF607 2N4427
Text: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · Silicon NPN, To-39 packaged VHF , . Collector Maximum Unilateral Gain = 12dB (typ) @ 200 MHz TO-39 DESCRIPTION: The 2N5109 is a , factory direct. 2N5109 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO(sus , Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Unit MHz 2N5109 , website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N5109 0.5 10 65 7.5


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PDF 2N5109 To-39 2N5109 MRF559 MRF4427, 2N4427 MRF553 MRF553T MRF607 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5179 transistor 2n5109 MRF553 MRF559 MRF607 2N4427
Not Available

Abstract: No abstract text available
Text: ¿888888888 p |M iwi B f i HBf s sssBP e m .f rHHHHHHHH h. M m 1 itittnnnnn h hhhhhk. > >itH 2N5109 1 I c ^88888 % # 1 l $ I o f id L SEM ICO N D U CTO RS Type 2N5109 G e n e r ic P a rt N u m b e r : 2N 5109 G eom etry 1 0 0 7 Polarity NPN Qual Level: JAN - JA NTXV REF: MIL-PRF-19500/453 Features: • V H F -U H F , Temperature Storage Temperature ¡¡I S G lH F IiC O fR SgdL Data Sheet No. 2N5109 SeMICONDUCTORS


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PDF 2N5109 MIL-PRF-19500/453
2N5109 motorola

Abstract: 2N5109
Text: MOTOROLA TECHNICAL DATA 2N5109 The R F Lin e 1.2 GHz @50 mAdc NPN SILICO N H IG H -FR EQ , 2N5109 E L E C T R IC A L C H A R A C T E R IS T IC S C h aracteristic O F F C H A R A C T E R I S T IC , MOTOROLA RF DEVICE DATA 2-45 2N5109 F I G U R E 3 - C U R R 6 N T - G A IN - B A N D W ID T H P R O , DEVICE DATA 2-46 2N5109 F IG U R E 7 - IN P U T A D M IT T A N C E versus F R E Q U E N C Y F , L E C T O R C U R R E N T (m A dcl MOTOROLA RF DEVICE DATA 2-47 2N5109 F IG U R E 13 - O U


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PDF 2N5109 2N5109 motorola 2N5109
1999 - 2N5109

Abstract: 19500/453 2N5109 JAN 2n5109 transistor transistor 2n5109
Text: Data Sheet No. 2N5109 Generic Part Number: 2N5109 Type 2N5109 Geometry 1007 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/453 Features: · VHF-UHF amplifier silicon transistor. · Housed in TO-39 case. · Also available in chip form using the 1007 chip geometry. · The Min and Max limits shown are per MIL-PRF-19500/398 which Semicoa meets in all cases , Operating Junction Temperature Storage Temperature o C o C Data Sheet No. 2N5109


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PDF 2N5109 MIL-PRF-19500/453 MIL-PRF-19500/398 2N5109 19500/453 2N5109 JAN 2n5109 transistor transistor 2n5109
2N5109

Abstract: multi-emitter transistor transistor 2n5109 P15V 2n5109 transistor
Text: 1988_-j/3 407 2N5109_ S G S-thomson_ 3QE » H 7WZ37 0Q3122b 1 ■T-31-23 THERMAL , 30E D ■7TET237 0031225 T T' SCS-THOMSON OOMmLUOTI^ÜlMDÜl_ 2N5109 Y G S-THOMSON EPITAXIAL PLANAR NPN CATV ULTRA-LINEAR HIGH GAIN TRANSISTOR The 2N5109 is a multi-emitter silicon planar epitaxial N PN transistor in Jedec TO-39 metal case. It is designed for CATV-MATV amplifier applications , Transfer Coefficient Si2e. 30" T-37-23 Power Gain vs. Collector Current. 2N5109 f =200MHz V,p


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PDF 7TET237 2N5109 2N5109 2TS37 T-37-23 200MHz multi-emitter transistor transistor 2n5109 P15V 2n5109 transistor
2004 - 2N5109

Abstract: No abstract text available
Text: DATA SHEET 2N5109 NPN SILICON RF TRANSISTOR JEDEC TO-39 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Base , (Continued) R2 2N5109 NPN SILICON RF TRANSISTOR TO-39 PACKAGE - MECHANICAL OUTLINE A B D C E


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PDF 2N5109 200MHz 200MHz 2N5109
2005 - 2N5109

Abstract: No abstract text available
Text: Central 2N5109 TM Semiconductor Corp. SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING CODE: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Collector-Base Voltage SYMBOL VCBO 40 , 0.5 150 MHz 3.5 3.0 11 pF dB dB R3 (23-June 2005) Central TM 2N5109


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PDF 2N5109 2N5109 200MHz 23-June
2N5109

Abstract: MRF227 FD700 100 uH Diode C3 uH33 C3 DIODE .47 uH
Text: 39 ohm +15 VDC 1 uf + RFC ( 1000 uh / Freq. in MHz ) L1 L2 10 ohm C1 Out Q1 13 dBm FD 700 1000 pf C2 C3 Freq. P out C1 C2 C3 L1 L2 Q1 RFC 30 MHz 30 dBm 150 pf 15 pf 39 pf 1.5 uh 1.2 uh 33 uh 2N5109 100 MHz 24 dBm 68 pf 10 pf none .82 uh .47 uh 10 uh 2N5109 200 MHz 30 dBm 33 pf 10 pf none .47 uh .27 uh 5.6 uh MRF227 One Watt Class-C Amplifier The FD700 diode keeps the duty-cycle near 50% for good efficiency for a wide range of input power levels. -


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PDF 2N5109 MRF227 FD700 2N5109 MRF227 100 uH Diode C3 uH33 C3 DIODE .47 uH
2N5109 motorola

Abstract: transistor 2N5109 c0851 2n5109
Text: 4b E D h3b?2S4 OOcmOb b 1 flOTb T -3 3 -n 2N5109 MOTOROLA TECHNICAL DATA SEM ICONDUCTOR MOTOROLA SC (XSTRS/R F) The RF Line 1.2 GHz © 50 mAdc NPN SILICON , M P R - C A S E 79-04 TO-205AO (TO-39) MOTOROLA RF DEVICE DATA 2-44 I 2N5109 MbE D , ) i c ,COLLECTOR CURRENT imAdd NJ 2N5109 MOTOROLA SC (XSTRS/R F) 4bE ]> b3b75S4 x - 3 3 - n , b3b?554 QQ'JMO?! S ttOTb 2N5109 T-S3-U F IG U R E 18 - F O R W A R D T R A N SM IS SIO N


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PDF 2N5109 abo2-46 2N5109 motorola transistor 2N5109 c0851 2n5109
2N5160

Abstract: 2N5583 MRF531 2n3866 noise BFR96 MFR901 BFR90 amplifier 2N5032 2N5943 BFR90
Text: 2N6304 2N5583 2N5943 2N5583 2N5109 2N5837 PNP NPN 1.2 2N4957 2N4959 2N2857 2N6305 2N6305 2N5583 2 N 5943 2N5583 2N5109 2N 5583 PNP NPN 1.0 2N5179 2N5179 2N2857 2N5583 2N5943 2N5160 MM8001 2N5160 2N5108 2N5583


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PDF 2N5829 2N5031 MRF904 2N4957 2N5032 2N5160 2N5583 MRF531 2n3866 noise BFR96 MFR901 BFR90 amplifier 2N5943 BFR90
MOTOROLA 2N5179

Abstract: 2N5160 BFR96 MRF531 MM4049 MRF911 2N4957 BFR90 MOTOROLA 2N5583 2N5032
Text: 2N6304 2N5583 2N5943 2N5583 2N5109 2N5837 PNP NPN 1.2 2N4957 2N4959 2N2857 2N6305 2N6305 2N5583 2 N 5943 2N5583 2N5109 2N 5583 PNP NPN 1.0 2N5179 2N5179 2N2857 2N5583 2N5943 2N5160 MM8001 2N5160 2N5108 2N5583 , T072 2N6305 5/2-10 1200 5.5/450 T072 BFX89 - 1200 6.5/500 T072 2N5109 15/10-50 1200 3.0


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PDF 2N5829 2N5031 MRF904 2N4957 2N5032 MOTOROLA 2N5179 2N5160 BFR96 MRF531 MM4049 MRF911 BFR90 MOTOROLA 2N5583
1999 - 2N5109

Abstract: 2C5109 2N5109UB SD5109 SD5109F SQ5109 SQ5109F
Text: Data Sheet No. 2C5109 Generic Packaged Parts: Chip Type 2C5109 Geometry 1007 Polarity NPN 2N5109 Chip type 2C5109 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: 2N5109 , 2N5109UB , SD5109, SD5109F, SQ5109, SQ5109F Product Summary: APPLICATIONS: Designed for broadband applications. Usable as high frequency current mode switch to 200 mA. Features: Special Characteristics ft = 1200 MHz (typ) at 50 mA/15V Mechanical Specifications Metallization


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PDF 2C5109 2N5109 2C5109 2N5109, 2N5109UB, SD5109, SD5109F, SQ5109, SQ5109F 2N5109 2N5109UB SD5109 SD5109F SQ5109 SQ5109F
BFR90 transistor

Abstract: 2n5583 mrf502 transistor 2N5160 transistor bfr96 MRF531 BFR91 BFR91 transistor 2N3866 2N5032
Text: 2N6304 2N5583 2N5943 2N5583 2N5109 2N5837 PNP NPN 1.2 2N4957 2N4959 2N2857 2N6305 2N6305 2N5583 2 N 5943 2N5583 2N5109 2N 5583 PNP NPN 1.0 2N5179 2N5179 2N2857 2N5583 2N5943 2N5160 MM8001 2N5160 2N5108 2N5583


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PDF 2N3866 2N3553 2N5641 144B-04 45A-07 2N5643 2N6166 MRF509 07A-01 BFR90 transistor 2n5583 mrf502 transistor 2N5160 transistor bfr96 MRF531 BFR91 BFR91 transistor 2N5032
LA 4440 IC

Abstract: IC LA 4127 LA 4127 2N5109 t 3866 power transistor ic la 4440 2N5687 2N3927 2N3375 5698 transistor
Text:  2N5109 SILICON NPN VHF POWER TRANSISTOR • Ideal for CATV Applications • Minimum Gain-Bandwidth Product 1.2 GHz • 11 dB at 200 MHz • Low Distortion • Low Noise mechanical data LA All , published at a later date. Texas Instruments 2-355 2N5109 SILICON NPN VHF POWER TRANSISTOR electrical , = 50 mA 200 Frequency - MHz FIGURE 2 2-356 Texas Instruments 2N5109 SILICON NPN VHF POWER , vs FREQUENCY Frequency - MHz Texas Instruments 2-355 2N5109 SILICOIM NPIM VHF POWER TRANSISTOR


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PDF 2N5109 LINEARIT20 O-117 O-128 O-131 O-129 LA 4440 IC IC LA 4127 LA 4127 2N5109 t 3866 power transistor ic la 4440 2N5687 2N3927 2N3375 5698 transistor
2N5109 motorola

Abstract: BFY90 MOTOROLA MRF965 2N5583 bfr91 motorola MOTOROLA 2N5179 MRF586 macro-X ceramic 2N3866A 2n4427 MOTOROLA
Text: combinations. 1 2N3866, 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109 , 2N5943 5 2N5583 , 5/2 1000 5.0/500 TO-72 BFX89 5/25 1200 6.5/500 TO-72 2N5109 15/50 1200 3.0*/200 TO


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PDF 17A-01 05A-01 MRF587 44A-01 2N3959 2N3960 2N5835 MM4049* MRF914 2N5943 2N5109 motorola BFY90 MOTOROLA MRF965 2N5583 bfr91 motorola MOTOROLA 2N5179 MRF586 macro-X ceramic 2N3866A 2n4427 MOTOROLA
2010 - JANTX 2N5109

Abstract: No abstract text available
Text: 2N5109 Silicon NPN Transistor Data Sheet Description SEMICOA Corporation offers: · Screening and processing per MIL-PRF-19500 Appendix E · JAN level ( 2N5109J ) · JANTX level ( 2N5109JX ) · JANTXV level ( 2N5109JV ) · JANS level ( 2N5109JS ) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS · Radiation testing (total dose) upon request Applications , 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N5109 Silicon NPN Transistor Data Sheet


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PDF 2N5109 MIL-PRF-19500 2N5109J) 2N5109JX) 2N5109JV) 2N5109JS) MIL-STD-750 MIL-PRF-19500/453 -10dB JANTX 2N5109
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