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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
TMP89FS60BUG TMP89FS60BUG ECAD Model Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003
TMP89FS62BUG TMP89FS62BUG ECAD Model Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003
TMP89FS60AUG TMP89FS60AUG ECAD Model Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E
TMP89FS63AUG TMP89FS63AUG ECAD Model Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65
TMP89FS60AEFG TMP89FS60AEFG ECAD Model Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/QFP64-P-1414-0.80A
TMP89FS62AUG TMP89FS62AUG ECAD Model Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A

2N5064 equivalent Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1996 - 2N5064

Abstract: 2n*064
Text: PIN 2N5064 QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER MAX , Thyristor sensitive gate 2N5064 THERMAL RESISTANCES SYMBOL PARAMETER Rth j-c Thermal , specification Thyristor sensitive gate 2N5064 MECHANICAL DATA Dimensions in mm 2.54 Net Mass , 2N5064 DEFINITIONS Data sheet status Objective specification This data sheet contains target or


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PDF 2N5064 2N5064 2n*064
1995 - 2N5061

Abstract: 2n5060 thyristor 2N5060 MOTOROLA 2N5064 2N5062 2N5060 2N5060-D Motorola 2n5060 2N5061/2N5062 2n5062 datasheet free download
Text: 2N5062 * 2N5064 * Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors *Motorola , 1000 ohms) 2N5060 2N5061 2N5062 2N5064 On-State Current RMS (All Conduction Angles) Symbol , © Motorola, Inc. 1995 1 2N5060 2N5061 2N5062 2N5064 MAXIMUM RATINGS - continued Rating Symbol , 2N5060 2N5061 2N5062 2N5064 FIGURE 1 ­ MAXIMUM CASE TEMPERATURE 130 = CONDUCTION ANGLE 120 , IT(AV), AVERAGE ON-STATE CURRENT (AMP) 3 2N5060 2N5061 2N5062 2N5064 FIGURE 6 ­ THERMAL


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PDF 2N5060/D 2N5060 2N5061 2N5062 2N5064 O-226AA 2N5060/D* 2N5061 2n5060 thyristor 2N5060 MOTOROLA 2N5064 2N5062 2N5060 2N5060-D Motorola 2n5060 2N5061/2N5062 2n5062 datasheet free download
2N5064

Abstract: 2N5062 2N5061 2n5060 thyristor
Text: Current - 5 mA Maximum Passivated Surface for Reliability and Uniformity 2N5060 2N5061 2N5062* 2N5064 , VoltageO) (T j = 25 to 125°C) (RGK = 1000 ohms) 2N5060 2N5061 2N5062 2N5064 O n-State C u rre n t RMS (All , -© M otorola, Inc. 1995 fM) x_- M O T O R O L A 2N5060 2N5061 2N5062 2N5064 , in m easurement. 2 Motorola Thyristor Device Data 2N5060 2N5061 2N5062 2N5064 CURRENT , Data 3 2N5060 2N5061 2N5062 2N5064 r(t), TRANSIENT THERMAL RESISTANCE NORMALIZED 0.002


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PDF 2N5060/D O-226AA 2N5060 2N5061 2N5062* 2N5064 O-226AA) 2N5064 2N5062 2n5060 thyristor
2N5064

Abstract: N5062
Text: ifo rm ity 2N5060 2N5061 2N5062* 2N5064 * SCRs 0.8 A M PERES R M S 30 thru 200 VOLTS m or oK , Reverse Blocking Voltage, Note 1 (Tj = 25 to 125°C) (R q k = 1000 ohm s) 2N5060 2N5061 2 N5062 2N5064 , are exceeded. M O TO RO LA T H Y R IST O R D E V IC E DATA 3-19 2N5060 thru 2N5064 M A X IM U , included in measurem ent. M O T O R O LA T H Y R IST O R D E V IC E DATA 3-20 2N5060 thru 2N5064 C , C U R R E N T {AM PI M O T O R O LA T H Y R IST O R D E V IC E DATA 3-21 2N5060 thru 2N5064


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PDF 2N5060 2N5064 2N5064 N5062
TIC 160

Abstract: thyristor tic 126 2N5064 AGT Thyristor tic 120 TIC64 TIC 160 D TIC45 AGK TIC106B Thyristor TO39
Text: TYPES 2N5060 THRU 2N5064 , TIC60 THRU TIC64 P-IN-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS , temperature 2NS060 2N5061 2N5062 2N5063 2N5064 UNIT TIC60 TIC61 TIC62 TIC63 TIC64 •Repetitive Peak , 2N5060 through 2N5064 only. This data sheet contains all applicable registered data in effect at the time , TYPES 2N5060 THRU 2N5064 , TIC60 THRU TIC64 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS electrical characteristics at ¡specified case temperature PARAMETER TEST CONDITIONS 2N5060 THRU 2N5064


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PDF 2N5060 2N5064, TIC60 TIC64 L-STD-202C O-66P TIC 160 thyristor tic 126 2N5064 AGT Thyristor tic 120 TIC 160 D TIC45 AGK TIC106B Thyristor TO39
1997 - 2N5064

Abstract: 2N5064 equivalent 2n5064 application note CTc102 integre
Text: PIN 2N5064 QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER MAX , 2N5064 THERMAL RESISTANCES SYMBOL PARAMETER Rth j-c Thermal resistance junction to case , 1.200 Philips Semiconductors Product specification Thyristor sensitive gate 2N5064 , specification Thyristor sensitive gate 2N5064 DEFINITIONS Data sheet status Objective specification


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PDF 2N5064 2N5064 2N5064 equivalent 2n5064 application note CTc102 integre
2n5063 thyristor

Abstract: 2N5060 2N5064 sm 6aa
Text: 2N5060 thru 2N5064 SCRs 0.8 AMPERES RMS 30 thru 200 VOLTS AO- W f- - ° K MAXIMUM , °C) 2N5060 2N5061 2N5062 2N5063 2N5064 On-State Current RMS (All Conduction Angles) ·Average On-State Current , SC (D I O D E S / O P T O ) 3^E » Bi b3b?2SS OOflSbbl 2 BI M0 T7 2N5060 thru 2N5064 M A X , Ohms) 2N5060 2N5061 2N5062 2N5063 2N5064 ' d r m . IRRM TC = 25°C T C = 125°C Vt M 'g t T C = 25°C T C , thru 2N5064 F IG U R E 6 - T H E R M A L R ESPO N SE I Ä - yI t .T IM E (SEC O N O S


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PDF HI110T7 -226A 2N5060 2N5064 2n5063 thyristor 2N5064 sm 6aa
2N5062

Abstract: 2N5061 2n5060 thyristor 2N5064 2N506 EB-30 2N5060 motorola reverse blocking triode thyristor To92 thyristor motorola
Text: Surface for Reliability and Uniformity 2N5060 2N5061 2N5062* 2N5064 * •Motorola preferred devices SCRs , 125»C) (RqK= 1000 ohms) 2N5060 2N5061 2N5062 2N5064 VDRM or VrrM 30 60 100 200 Volts On-State Current , best overall value. REV 1 3-2 Motorola Thyristor Device Data 2N5060 2N5061 2N5062 2N5064 MAXIMUM , measurement. Motorola Thyristor Device Data 3-3 2N5060 2N5061 2N5062 2N5064 CURRENT DERATING FIGURE 1 - , Thyristor Device Data 3-3 2N5060 2N5061 2N5062 2N5064 1.0 0.5 0.2 0.1 0.05 0.02 FIGURE 6-THERMAL RESPONSE Â


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PDF O-226AA 2N5060 2N5061 2N5062* 2N5064 200GURE Ru-100 2N506! 2N5062 2n5060 thyristor 2N5064 2N506 EB-30 motorola reverse blocking triode thyristor To92 thyristor motorola
2n5061

Abstract: 2NS061 2n 5064
Text: ity 2N5060 2N5061 2N5062* 2N5064 * ·Motorola preferred devices SCRs 0.8 AMPERES RMS 30 thru 200 , Data 2N5060 2N5061 2N5062 2N5064 MAXIMUM RATINGS - continued Rating 'O p e ra tin g Junction Tem , 2NS061 2N5062 2N5064 CURRENT DERATING T c , MAXIMUM ALLOWABLE CASE TEMPERATURE f t ) FIGURE 1 - , 2N5061 2NS062 2N5064 PIQURE 6 - THERMAL RESPONSE t, TIME (SECONDS) TYPICAL CHARACTERISTICS -50


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PDF 2N5060 2N5061 2NS062 2N5064 2NS061 2n 5064
TA112

Abstract: No abstract text available
Text: ity · A lso A va ila b le w ith TO-5 or TO-2Q6AA (TO 181 Leadform 2N5060 thru 2N5064 SCRs 0.8 , ohm s, T q - * 125r ,C) 2N5060 2N5061 2N5062 2N5063 2N5064 On-State Current R M S (AH Conduction A , 2N5060 thru 2N5064 MAXIMUM RATINGS - continued Rating "O perating Ju n ctio n T em perature Range < · , t. M OTOROLA TH YR ISTO R D EVIC E DATA 2N5060 thru 2N5064 CURRENT DERATING F IG U R E 1 - , A T I L U H R t N T ¡AN1P> M OTOROLA T H Y R IS TOR D EV IC E DATA 3-29 2N5060 thru 2N5064


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PDF O-226AA TA112
2000 - 2N5060 equivalent

Abstract: 2N5064 equivalent 2N5062 equivalent 2N5061 equivalent scr 2N5064 equivalent EQUIVALENT 2N5064 2N5060 scr 2N5061 equivalent SCR 2N5060 2n5060 SCR
Text: 60 Hz, Gate Open) 2N5060 2N5061 2N5062 2N5064 Symbol VDRM, VRRM 30 60 100 200 IT(RMS) IT(AV) 0.51 , 2N5062, 2N5064 - - 10 30 - - DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off­State , . 2N5060,61,62,64 2N5060,61,62,64RLRA 2N5060,64RLRM Europe Equivalent Shipping Bulk in Box (5K/Box) Radial


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PDF 2N5060 O-226AA 2N5060, 64RLRA 64RLRM 2N5060 equivalent 2N5064 equivalent 2N5062 equivalent 2N5061 equivalent scr 2N5064 equivalent EQUIVALENT 2N5064 scr 2N5061 equivalent SCR 2N5060 2n5060 SCR
2011 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS '$7$ 6+(7 2N5064 Thyristor sensitive gate Product specification October 1997 1;3 Semiconductors Product specification Thyristor sensitive gate GENERAL , microcontrollers, logic integreated circuits and other low power gate trigger circuits. 2N5064 QUICK , Thermal resistance junction to ambient CONDITIONS see note: 1 2N5064 MIN. - TYP. 200 MAX. 75 , : 0.2 g 2N5064 2.54 0.66 0.56 1.6 4.2 max 4.8 max 5.2 max 2.5 max 12.7 min 321


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PDF 2N5064 2N5064
TIC64

Abstract: TIC62 2N5060 TIC60 thyristor+st+103
Text: case temperature 2NS060 2N5061 2N5062 2N5063 2N5064 TIC60 ` Repetitive Peak Off-State Voltage, V p ^ ^ , 7-19 TYPES 2N5060 THRU 2N5064 , TIC60 THRU TIC64 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS , * 5 1.7* 5 1.7 2N5064 M IN MAX 50* 50* 350" 200 1.2* 0.8 0.1 mA V 0.8 V 200 TIC60 THRU TIC64 M IN MAX , TEX A S 7 S 2 2 2 TYPES 2N5060 THRU 2N5064 , TIC60 THRU TIC64 P-N-P-N SILICON REVERSE-BLOCKING , 5 2 3 2 7-21 TYPES 2N5060 THRU 2N5064 , TIC60 THRU TIC64 P-N-P-N SILICON REVERSE-BLOCKING


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PDF 2N5060 2NS064. TIC60 TIC64 -202C 2NS060 2N5061 TIC62 thyristor+st+103
2004 - SCR 2N5060 applications

Abstract: 2n5060 SCR 2N5060 2N5061G 102c marking 2n5062
Text: ) 2N5060 2N5061 2N5062 2N5064 On-State Current RMS (180° Conduction Angles; TC = 80°C) *Average On-State , - 10 50 mA mA Symbol Min Typ Max Unit tq ms 2N5060, 2N5061 2N5062, 2N5064 - - 10 30 , 2N5061RLRAG 2N5061RLRM 2N5062 2N5062RLRA 2N5064 2N5064RLRA 2N5064RLRM 2N5060RL1 Package TO-92 TO-92 TO-92 TO


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PDF 2N5060 O-92/TO-226AA 2N5060RLRA 2N5060RLRM 2N5061 2N5061G 2N5061RLRA 2N5061RLRAG 2N5061RLRM SCR 2N5060 applications SCR 2N5060 102c marking 2n5062
2004 - LS6301

Abstract: No abstract text available
Text: , 60Hz) DECODER R2 18KΩ 2N5064 B 1 OUT 1 2 OUT 2 GND 3 4 Q2 2N5064 NEON


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PDF LS6301 A3800 LS6301-S directly115, 2N5064 875Hz LS6301
2011 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS '$7$ 6+(7 2N5064 Thyristor sensitive gate Product specification October 1997 1;3 Semiconductors Product specification Thyristor sensitive gate GENERAL , . PINNING - TO92 variant PIN 2N5064 QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM , sensitive gate 2N5064 THERMAL RESISTANCES SYMBOL PARAMETER Rth j-c Thermal resistance , Product specification Thyristor sensitive gate 2N5064 MECHANICAL DATA Dimensions in mm 2.54


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PDF 2N5064
2000 - 2N5060 equivalent

Abstract: SCR 2N5060 SCR 2N5060 applications 2N5064 equivalent 2N5060 2N5062 equivalent scr 2N5062 SCR 2N5061 2N5061 equivalent 2N5061
Text: °C, Sine Wave, 50 to 60 Hz, Gate Open) 2N5060 2N5061 2N5062 2N5064 VDRM, VRRM On-State Current , 2N5060, 2N5061 2N5062, 2N5064 - - 10 30 - - - 30 - DYNAMIC CHARACTERISTICS , Equivalent 2N5060,61,62,64 2N5060,61,62,64RLRA 2N5060,64RLRM Shipping Description of TO92 Tape


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PDF 2N5060 O-226AA 2N5060, r14525 2N5060/D 2N5060 equivalent SCR 2N5060 SCR 2N5060 applications 2N5064 equivalent 2N5062 equivalent scr 2N5062 SCR 2N5061 2N5061 equivalent 2N5061
1999 - 2N5060 equivalent

Abstract: 2N5064 equivalent 2N5062 equivalent EQUIVALENT 2N5064 2N5061 equivalent scr 2N5064 equivalent
Text: 60 Hz, Gate Open) 2N5060 2N5061 2N5062 2N5064 Symbol VDRM, VRRM 30 60 100 200 IT(RMS) IT(AV) 0.51 , 2N5062, 2N5064 - - 10 30 - - DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off­State , . 2N5060,61,62,64 2N5060,61,62,64RLRA 2N5060,64RLRM Europe Equivalent Shipping Bulk in Box (5K/Box) Radial


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PDF 2N5060 O-226AA 2N5060, r14525 2N5060/D 2N5060 equivalent 2N5064 equivalent 2N5062 equivalent EQUIVALENT 2N5064 2N5061 equivalent scr 2N5064 equivalent
LZ 173 relay

Abstract: specifications 2N1597 2N5062 SILICON CONTROL RECTIFIER GE C106A1 SCR 2N5061 scr C106 2n2344 2N2346 2N2322-29 C103
Text: max. IGT. 138 Controlled Rectifier 0.8A RMS UP TO 200 VOLTS 2N5060 thru 2N5064 TYPICAL , Volts* 180 Volts* 2N5064 200 Volts* 200 Volts* 230 Volts* RMS On-State Current, It(rms)(4 , of current at 60 Hz. ♦Indicates JEDEC Registered Data. ace 2 IM5060 THRU 2N5064 CHARACTERISTICS


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PDF 2N877-81 2N5060-64 2N2322-29 2N1595-99 50/jsec. 60pps. LZ 173 relay specifications 2N1597 2N5062 SILICON CONTROL RECTIFIER GE C106A1 SCR 2N5061 scr C106 2n2344 2N2346 C103
2002 - T106D1

Abstract: scr T106D1
Text: EC103D2 EC103M2 EC103B3 EC103D3 EC103M3 2N5064 2N6565 TCR22-4 TCR22-6 TCR22-8 T106B1 T106D1 T106M1 T107B1 , voltage; VD = 6 V DC; RL = 100 W VTM - Peak on-state voltage General Notes · Teccor 2N5064 and 2N6565 , 2N5064 Series and 2N6565 Series devices (15) IH = 6 mA maximum at TC = -40 °C for T106 devices (16) Pulse Width £10 µs (17) IGT = 350 µA maximum at TC = -65 °C for 2N5064 Series and 2N6565 Series devices (18 , µA for 2N5064 and 100 µA for 2N6565 at 125 °C (21) TO-92 devices specified at -650 °C instead of -40


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PDF O-220 O-202 O-252 O-251 T106D1 scr T106D1
2008 - 2n5064g

Abstract: 2N5061 2N5060G 2N5062 scr 2N5062 SCR 2N5060 2N5064RLRAG 2N5060 2N5060RLRA 2N5060RLRM
Text: 1 kW) 2N5060 2N5061 2N5062 2N5064 VDRM, VRRM On-State Current RMS (180° Conduction Angles , 2N5062, 2N5064 30 - DYNAMIC CHARACTERISTICS dv/dt Critical Rate of Rise of Off-State Voltage , TO-92 2,000 / Tape & Reel TO-92 (Pb-Free) 2,000 / Tape & Reel 2N5064 TO-92 5,000


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PDF 2N5060 O-92/TO-226AA 2n5064g 2N5061 2N5060G 2N5062 scr 2N5062 SCR 2N5060 2N5064RLRAG 2N5060RLRA 2N5060RLRM
2004 - T106, scr

Abstract: T106D1 S4006LS S2008LS3 2N6565 S2004VS1
Text: EC103D1 EC103M1 EC103B2 EC103D2 EC103M2 EC103B3 EC103D3 EC103M3 2N5064 2N6565 TCR22-4 TCR22-6 TCR22 , General Notes · Teccor 2N5064 and 2N6565 Series devices conform to all JEDEC registered data. See , (15) IH = 10 mA maximum at TC = -65 °C for 2N5064 Series and 2N6565 Series devices (16) IH = 6 mA , for 2N5064 Series and 2N6565 Series devices (19) Latching current can be higher than 20 mA for higher , for test conditions in off state (21) IDRM and IRRM = 50 µA for 2N5064 and 100 µA for 2N6565 at 125 °C


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PDF O-220 O-202 O-252 O-251 of972-580-7777 T106, scr T106D1 S4006LS S2008LS3 2N6565 S2004VS1
Not Available

Abstract: No abstract text available
Text: 2N5060 2N5061 2N5062 2N5064 Peak repetitive off-state voltage (1) (TJ = -40 to +110°C, sine wave , , IGT = 1 mA) 2N5060, 2N5061 2N5062, 2N5064 DYNAMIC CHARACTERISTICS Critical rate of rise of


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PDF 2N5060-2N5064 MIL-PRF-19500, 2N5060 2N5061 2N5062 2N5555
2008 - 2N5060

Abstract: SCR 2N5060 2N5060G SCR 2N5060 applications scr 2N5064 equivalent asme y14.5m to-92 VAK marking 2N5060RLRA 2n5062 free 2N5060RLRM
Text: 2N5061 2N5062 2N5064 VDRM, VRRM On-State Current RMS (180° Conduction Angles; TC = 80°C) IT , tq mA ms ms - - 10 30 - - - 2N5060, 2N5061 2N5062, 2N5064 30 - , Units / Box TO-92 2,000 / Tape & Reel TO-92 (Pb-Free) 2,000 / Tape & Reel 2N5064 TO


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PDF 2N5060 O-92/TO-226AA 2N5060/D SCR 2N5060 2N5060G SCR 2N5060 applications scr 2N5064 equivalent asme y14.5m to-92 VAK marking 2N5060RLRA 2n5062 free 2N5060RLRM
2008 - 2N5060

Abstract: 2n5062 free SCR 2N5060 SCR 2N5060 applications
Text: °C, Sine Wave, 50 to 60 Hz, Gate Open) 2N5060 2N5061 2N5062 2N5064 On-State Current RMS (180° Conduction , td tr tq ms 2N5060, 2N5061 2N5062, 2N5064 - - 10 30 - - Voltage Current , 2N5061RLRA 2N5061RLRAG 2N5062 2N5062G 2N5062RLRA 2N5062RLRAG 2N5064 2N5064RLRA 2N5064RLRM 2N5064RLRMG


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PDF 2N5060 O-92/TO-226AA 2N5060/D 2n5062 free SCR 2N5060 SCR 2N5060 applications
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