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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2N5039 NTE Electronics Inc Newark element14 75 $4.73 $3.96
2N5039 STMicroelectronics Bristol Electronics 86 $6.27 $2.93
2N5039 New Jersey Semiconductor Products, Inc. Bristol Electronics - -
2N5039 RCA Bristol Electronics - -
2N5039 Chip One Exchange - -
2N5039 NTE Electronics Inc Master Electronics 3 $4.16 $2.77
J2N5039 RCA Bristol Electronics - -
JAN2N5039 STC Bristol Electronics 3 $120.00 $120.00

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2N5039 datasheet (68)

Part Manufacturer Description Type PDF
2N5039 Microsemi NPN HIGH POWER SILICON TRANSISTOR Original PDF
2N5039 On Semiconductor NPN SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=75 / Ic=20 / Hfe=20-100 / fT(Hz)=50M / Pwr(W)=140 Original PDF
2N5039 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=75 / Ic=20 / Hfe=20-100 / fT(Hz)=50M / Pwr(W)=140 Original PDF
2N5039 Semico Silicon NPN Transistor Original PDF
2N5039 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
2N5039 API Electronics 15 AMPS / 20 AMPS NPN Transistors Scan PDF
2N5039 API Electronics Short form transistor data Scan PDF
2N5039 API Electronics Short form transistor data Scan PDF
2N5039 Boca Semiconductor NPN SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=75 / Ic=20 / Hfe=20-100 / fT(Hz)=50M / Pwr(W)=140 Scan PDF
2N5039 Crimson Semiconductor MULTIEPITAXIAL Transistors Scan PDF
2N5039 Diode Transistor Transistor Short Form Data Scan PDF
2N5039 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N5039 General Diode Transistor Selection Guide Scan PDF
2N5039 General Electric High current, high power, high speed silicon N-P-N planar transistor. - Pol=NPN / Pkg=TO3 / Vceo=75 / Ic=20 / Hfe=20-100 / fT(Hz)=50M / Pwr(W)=140 Scan PDF
2N5039 Mospec POWER TRANSISTORS(20A,140W) - Pol=NPN / Pkg=TO3 / Vceo=75 / Ic=20 / Hfe=20-100 / fT(Hz)=50M / Pwr(W)=140 Scan PDF
2N5039 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2N5039 Motorola European Master Selection Guide 1986 Scan PDF
2N5039 Motorola Power Transistor Selection Guide Scan PDF
2N5039 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N5039 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF

2N5039 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N5038

Abstract:
Text: Qualified Level 2N5038 JAN JANTX JANTXV 2N5039 MAXIMUM RATINGS Ratings Collector-Emitter , Dissipation @ TC = +250C (1) Operating & Storage Temperature Range Symbol 2N5038 2N5039 Units , Collector-Emitter Cutoff Current VBE = -1.5 Vdc VCE = 100 Vdc VBE = -1.5 Vdc VCE = 85 Vdc 2N5038 2N5039 2N5038 2N5039 ICBO 1.0 1.0 µAdc 2N5038 2N5039 ICEO 1.0 1.0 µAdc IEBO 1.0 µAdc ICEX 5.0 5.0 µAdc 2N5038 2N5039 6 Lake Street, Lawrence, MA 01841


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PDF MIL-PRF-19500/ 2N5038 2N5039 O-204AA) 2N5038 2N5039
2N5038

Abstract:
Text: SavantIC Semiconductor Product Specification 2N5038 2N5039 Silicon NPN Power Transistors , voltage VEBO CONDITIONS 2N5038 Emitter-base voltage 2N5039 2N5038 2N5039 Open emitter , 2N5039 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , CONDITIONS 2N5038 2N5038 V IC=12A ;IB=1.2A 2N5039 IC=10A ;IB=1A Collector-emitter , mA IC=12A ; VCE=5V IC=10A ; VCE=5V VCE=70V; IB=0 2N5039 VCE=55V; IB=0 Base-emitter on


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PDF 2N5038 2N5039 2N5038 2N5039
2N5038

Abstract:
Text: r z 7 SCS-THOMSON ^ 7 # KfflOtgœiLiûra®*! 2N5038 2N5039 HIGH CURRENT NPN SILICON TRANSISTOR . 2N5038 IS A SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N5038 and 2N5039 are silicon , 2N5039 C ollector-B ase V oltage (I e = 0) 150 120 V V cE X C o lle cto r-E m itte r V , October 1995 5 A 140 W -65 to 200 °C 200 °c 1/5 2N5038/ 2N5039 THERMAL , 2N5038 fo r 2N5039 Vce = 70 V VCe = 55 V 20 20 mA mA I ebo E m itter C ut-off C urrent


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PDF 2N5038 2N5039 2N5038 2N5039 2N5038/2N5039 P003N
1999 - 2N5038

Abstract:
Text: TECHNICAL DATA 2N5038 JAN, JTX, JTXV 2N5039 JAN, JTX, JTXV MIL-PRF QPL DEVICES , 2N5039 Units VCEO VCBO VEBO IB IC PT 90 150 75 125 Vdc Vdc Vdc Adc Adc W TJ , VCE = 100 Vdc VBE = -1.5 Vdc VCE = 85 Vdc 2N5038 2N5039 2N5038 2N5039 ICBO 1.0 1.0 µAdc 2N5038 2N5039 ICEO 1.0 1.0 µAdc IEBO 1.0 µAdc ICEX 5.0 5.0 µAdc 2N5038 2N5039 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978


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PDF 2N5038 2N5039 MIL-PRF-19500/439 2N5038 2N5039 O-204AA) transistor 2n5038 JAN 2N5038
1998 - 2n5038

Abstract:
Text: Back to Bipolar Power Transistors TECHNICAL DATA 2N5038 JAN, JTX, JTXV 2N5039 JAN, JTX, JTXV , VCEO VCBO VEBO IB IC PT TJ, Tstg 2N5038 90 150 2N5039 75 125 Units Vdc Vdc Vdc Adc Adc W 0 , Cutoff Current VBE = -1.5 Vdc VCE = 100 Vdc VBE = -1.5 Vdc VCE = 85 Vdc 2N5038 2N5039 V(BR)CEO 90 75 7.0 1.0 1.0 1.0 1.0 1.0 5.0 5.0 Vdc V(BR)EBO 2N5038 2N5039 2N5038 2N5039 ICBO Vdc µAdc ICEO µAdc IEBO 2N5038 2N5039 ICEX µAdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978


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PDF 2N5038 2N5039 MIL-PRF-19500/439 2N5038 2N5039 O-204AA) transistor 2n5038
2005 - 2N5038

Abstract:
Text: Product Specification www.jmnic.com 2N5038/ 2N5039 Silicon NPN Power Transistors , CONDITIONS 2N5038 VCBO Collector-base voltage 90 Open base 2N5039 VEBO V 120 2N5038 Collector-emitter voltage Emitter-base voltage UNIT 150 Open emitter 2N5039 VCEO VALUE V 75 , Product Specification www.jmnic.com 2N5038/ 2N5039 Silicon NPN Power Transistors , voltage CONDITIONS 2N5038 MIN TYP MAX UNIT 90 IC=0.2A ;IB=0 2N5039 V 75


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PDF 2N5038/2N5039 2N5038 2N5039 2N5038 2N5039 TO-3 140V 20A
2N5038

Abstract:
Text: VCE(SAT) ^ 2.5 V @ lc=20A MAXIMUM RATINGS Characteristic Symbol 2N5038 2N5039 Unit , u0 25 50 75 100 125 150 175 200 tc , temperature;0 c) NPN 2N5038 2N5039 20 AMPERE NPN , CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) (1. = 200 mA, 1- = 0) 2N5038 2N5039 ^CEO(SUS) 90 , ) 2N5039 (Ves=100 V, V = 1.5 V, Tc = 150°C ) 2N5038 (VCE=85 V, VBB(off) = 1.5 V, Tc = 150°C ) 2N5039 'cEX 50 50 10 10 mA Emitter Cutoff Current (V-B = 5.0 V , lc = 0 ) 2N5038 2N5039 (VEB = 7.0V,IC = 0


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PDF 2N5038 2N5039
2N9038

Abstract:
Text: , JANTXV 2N5039 FEATURES • Collector-Base Voltage: up to 150V • Peak Collector Current: 30A • tOT , switching-control amplifiers. ABSOLUTE MAXIMUM RATINGS J*NTX JAN.JANTX fc JANTXV 1JANTXV 2N9038 2N5039 , °C for 10 seconds. JAN, JANTX, JANTXV 2N5038, 2N5039 ins. mm a .875 max. 2.22 max. b .135 max. 0.34 , !» 76 UNITRODE JAN, JANTX & JANTXV 2N5038 JAN, JANTX & JANTXV 2N5039 Electrical Specifications (at 25°C unless noted) 2N5038 2N5039 Test Symbol MIN. MAX. MIN. MAX. Units Test Conditions D.C


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PDF 2N5038 2N5039 MIL-S-19500/439 2N9038 2N5039 2N503S 2N903 2N5039 JANTX JANTX 2N5038 JANTX 2N5039
2n5038

Abstract:
Text: Inchange Semiconductor Product Specification 2N5038 2N5039 Silicon NPN Power Transistors , Open emitter 2N5039 VCEO VEBO CON EMI PARAMETER INC 2N5038 Collector-emitter , 2N5039 UNIT V 75 7 V IC Collector current 20 A ICM Collector current-peak , Inchange Semiconductor Product Specification 2N5038 2N5039 Silicon NPN Power Transistors , =1.2A 2N5039 IC=10A ;IB=1A Collector-emitter saturation voltage Base-emitter saturation voltage


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PDF 2N5038 2N5039 2N5038 2N5039 2N5039 inchange TO-3 140V 20A
1995 - 2N5038

Abstract:
Text: 2N5038 2N5039 HIGH CURRENT NPN SILICON TRANSISTOR n 2N5038 IS A SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N5038 and 2N5039 are silicon planar multiepitaxial NPN transistors in Jedec , Unit 2N5038 V CBO Collector-Base Voltage (I E = 0) 2N5039 150 120 V V CEX , W -65 to 200 o C 200 o C 1/5 2N5038/ 2N5039 THERMAL DATA R thj -ca se , est Con ditio ns for 2N5038 V CE = 140 V V CE = 100 V for 2N5039 V CE = 110 V V CE = 85 V Min


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PDF 2N5038 2N5039 2N5038 2N5039 IC 555 DATASHEET OF IC 555 SGS-Thomson TRANSISTOR C 460 P003N sgs 8 r 15 transistor 2n5038
2002 - 2N5038

Abstract:
Text: Qualified Level 2N5038 JAN JANTX JANTXV 2N5039 MAXIMUM RATINGS Ratings Collector-Emitter , Dissipation @ TC = +250C (1) Operating & Storage Temperature Range Symbol 2N5038 2N5039 Units , Collector-Emitter Cutoff Current VBE = -1.5 Vdc VCE = 100 Vdc VBE = -1.5 Vdc VCE = 85 Vdc 2N5038 2N5039 2N5038 2N5039 ICBO 1.0 1.0 µAdc 2N5038 2N5039 ICEO 1.0 1.0 µAdc IEBO 1.0 µAdc ICEX 5.0 5.0 µAdc 2N5038 2N5039 6 Lake Street, Lawrence, MA 01841 1-800-446-1158


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PDF MIL-PRF-19500/439 2N5038 2N5039 O-204AA) 2N5038 2N5039 transistor 2n5038
2N5039

Abstract:
Text: MOTOROLA Order this document by 2N5038/D SEMICONDUCTOR TECHNICAL DATA 2N 5038* 2N5039 , Amps *MAXIMUM RATINGS Symbol 2N5038 2N5039 Unit C o llector-B ase Voltage Rating , €” 2N5038 2N5039 lC = 12 AMPS lC = 10 AMPS Ißi = Iß2 - 1.2 AMPS Iß i = Iß2 = 1 -0 AMPS , use and best overall value. REV 7 © M otorola, Inc. 1995 ftf) M OTOROLA 2N5038 2N5039 â , Vdc V cE O (su s) 2N5038 2N5039 mAdc ICEX 2N5038 2N5039 2N5038 2N5039 — — â


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PDF 2N5038/D 2N5039 2N5038 O-204AA 2N5039
2N5038

Abstract:
Text: @ lc=20A MAXIMUM RATINGS Boca Semiconductor Corp. (BSC) NPN 2N5038 2N5039 Characteristic Symbol 2N5038 2N5039 Unit Collector-Emitter Voltage vceo 90 75 V Collector-Base Voltage ^cbo 150 120 V , : //www. bo casemi. com http://www.bocasemi.com 2N5038, 2N5039 NPN ELECTRICAL CHARACTERISTICS (Tc = 25Â , Emitter Sustaining Voltage (1) (1. = 200 mA, 1- = 0) 2N5038 2N5039 ^CEO(SUS) 90 75 V Collector Cutoff Current (VCB=140 V, VBE(off, = 1.5 V) 2N5038 (Vcs=110 V, VBE)<>ff, = 1.5 V) 2N5039 (Ves=100 V, V = 1.5 V


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PDF 2N5038 2N5039 2N5039 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 2N6039
2001 - 2n5038

Abstract:
Text: industrial and commercial applications. 2N5038 * 2N5039 *ON Semiconductor Preferred Device · High , 2N5038 150 150 2N5039 120 120 Unit Vdc Vdc Vdc Adc Adc Collector­Base Voltage Collector­Emitter Voltage , IB2 = 1.2 AMPS 2N5039 IC = 10 AMPS IB1 = IB2 = 1.0 AMPS Figure 1. Switching Time Test Circuit , 0) VCEO(sus) Vdc 2N5038 2N5039 90 75 - - - - - - Collector Cutoff Current (VCE = 140 Vdc, VBE , = 0) ICEX mAdc 2N5038 2N5039 2N5038 2N5039 50 50 10 10 IEBO mAdc 2N5038 2N5039 Both - - - 5 15 50


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PDF 2N5038 2N5039 r14525 2N5038/D 2n5038 2n5039
2n5039

Abstract:
Text: 2N5038* 2N5039 "Motorola Preferred Device 20 AMPERE NPN SILICON POW ER TRANSISTORS 75 and 90 VOLTS , 'b PD T j' Tstg 2N5038 150 150 7 20 30 5 140 0.8 -6 5 t o +200 2N5039 120 120 Unit Vdc Vdc Vdc Ade , Power Transistor Device Data 2NS038 2N5039 'E LEC TR IC A L CHARACTERISTICS (Tc 25 ° C unless , , Ib - 0) VCEO(sus) 2N5038 2N5039 'CEX 2N5038 2N5039 2N5038 2N5039 2N5038 2N5039 Both 'EBO 90 75 mAdc , 2N5038 2N5039 v CE(sat) VßE(sat) 20 20 - - 100 100 2.5 3.3 Vdc Vdc lhfel 12 - - V


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PDF 2N5038* 2N5039 2n5039 2n5038 2N5038 transistor
1995 - 2N5038

Abstract:
Text: 2N5039 ­5 V ­9 V 1N4933 PW = 20 µs DUTY CYCLE = 1% 0 +11 V 10 VCC + 30 V RC 2.5 , Symbol 2N5038 2N5039 Unit Collector­Base Voltage VCBO 150 120 Vdc , applications. *Motorola Preferred Device NPN Silicon Transistors 2N5038* 2N5039 SEMICONDUCTOR , THERMAL LIMIT SECOND BREAKDOWN LIMIT TC = 25°C 2N5039 0.5 1 There are two limitations on the , = IB2 = 1 Adc) 2N5039 tf - 0.5 µs Collector­Emitter Saturation Voltage (IC = 20


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PDF 2N5038 2N5039 1N4933 2N5038/D* 2N5038/D 2N5038 2N5039 1N4933
2n5038

Abstract:
Text: 0.8 - 6 5 t o +200 2N5039 120 120 Unit Vdc Vdc Vdc Ade ic 'CM 'B PD T j. Tstg Ade , AMPS 2N5039 lC = 10 AMPS > B 1=> B 2 = 10 amps Figure 1. Switching Time Test Circuit P referred , . 1995 ftf) M O TO R O LA 2N5038 2N5039 ` ELECTRICAL CHARACTERISTICS (T q = 25°C unless otherwise , mAdc, \ q = 0) v CEO(sus) 2N5038 2N5039 'CEX 2N5038 2N5039 2N5038 2N5039 'EBO 2N5038 2N5039 Both 90 75 , = 5 Ade) hFE 2N5038 2N5039 v CE(sat) 20 20 - 100 100 2.5 Vdc v BE(sat) - 3.3


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PDF 2N5038/D 2n5038 2n5039
RCA-2N5038

Abstract:
Text: - Typical input characteristics for 2NS038 and 2N5039. IU ly 20 25 30 35 40 COLLECTOR-TO-EMITTER VOLTAGE , Vrcvlsusl «" acceptable when the traces fall to the right of point "A" for type 2N5039. point "B ' for type , _ 2N5038, 2N5039 , 2N6496 File Number 698 High-Current, High-Power High-Speed Silicon N-P-N Planar , -2N5038, 2N5039 and 2N6496 are epitaxial silicon n-p-n planar transistors. They differ in breakdown-voltage , . (0.8 mm) from seating plane for 10 s max. 2N5038 2N5039 2N6496 vCBO 150 120 150 V VCEX(sus) 150


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PDF STATE111 2N5038, 2N5039, 2N6496 RCA-2N5038 2N5039 2N3678 2CS-22377R' 2N5038 equivalent 2N6496 RCA 2N5038 2n5038 sol 2N5039-1 AALI
2N5038 JANS

Abstract:
Text: , SILICON, HIGH-POWER, TYPES 2N5038 AND 2N5039 , JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This , = +25°C W 2N5038 2N5039 VCBO VCEO VEBO IB IC TJ and TSTG V dc V dc V , = 2.0 A dc IC = 10 A dc ( 2N5039 ) Pulse Response IC = 10 A dc IB = 1.0 A dc f = 5 MHz IE = 0 100 kHz f 1MHz ( 2N5039 ) Min Max 15 ton toff V dc pF µs µs °C , (saturated) MIL-STD-750 Method Conditions 2N5039 3 Collector to emitter cutoff current 2N5038


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PDF MIL-PRF-19500/439F MIL-PRF-19500/439E 2N5038 2N5039, MIL-PRF-19500. 2N5038 JANS 2N5039 2N5039 JANS qci sample MIL-PRF19500
2n5039

Abstract:
Text: characteristics fo r 2N 5038and 2N5039. Fig. 7 - Maximum reverseras, second-breakdown characteristics fo r , 5039. Fig, 12 -Typica! de beta characteristics fo r 2N5039. C O L L E C T O R -T O -E M IT T E R , Typical o u tp u t characteristics fo r 2N5039. Fig. 18 - Typical in p u t characteristics fo r 2NS038 and 2N5039. 3 10 IS 20 29 90 35 COLLECTOR-TO-EMITTER VOLTAGE (VCE>- V 9 2 C S -2 2 8 0 I , 2N5038, 2N5039 , 2N6496 HARRIS SEMICOND SECTOR SbE ] > File Number 698 43G2271 GD4044fl


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PDF 2N5038, 2N5039, 2N6496 43G2271 GD4044fl 2NS038, 2NS039 2N6496 22377R' 2n5039 U3540
2n5038

Abstract:
Text: characteristics fo r 2N5039. 0 0 .5 ( 1-5 2 2 5 9 9 2 C S -2 2 7 9 8 9 2 C S -2 2 8 0 0 , -I464 Fig. 17 - Typical o utp ut characteristics fo r 2N5039. Fig. 1 8 - Typical in p u t characteristics , 3875081 G E SOLID STATE ^ 2N5038, 2N5039 , 2N6496 High-Speed Power iransisiors , , 2N5039 , 2N6496 ELECTRICAL CHARACTERISTICS, A t Case Temperature (Tq) = 25° C Unless Otherwise Specified , G E SOLID S T A T E ~ ^ 2N5038, 2N5039 , 2N6496 D E ^ 3 Û 7 S 0 Û 1 dDlT-Liil < ` , p''2>3*, '


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PDF 2N5038, 2N5039, 2N6496 2N6496 2n5038 FO152
Not Available

Abstract:
Text: ¿ 888888888 pM | iwiHBBffi s sssBP e m .rfH H H H M. HHHH h m 1 itittnnnnn h hhhhhk-. Data Sheet No. 2N5039 iiH iiftBH hr. o 1 I cI ^88888 % f# 1 l $ sdL SEMICONDUCTORS Type 2N5039 Generic Part Number: 2N5039 Geometry H9352 Polarity NPN Qual Level: Pending REF: MIL-PRF-19500/439 Features: • General-purpose high power tran­ sistor for use in , Temperature Storage Temperature Pt ¡J| 5G¡HF1ÍCOfñ Data Sheet No. 2N5039 «sdì S e M IC O N


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PDF 2N5039 H9352 MIL-PRF-19500/439 H9352 MIL-PRF-19500/439
1999 - h935

Abstract:
Text: Data Sheet No. 2N5039 Type 2N5039 Geometry H9352 Polarity NPN Qual Level: Pending Features: · General-purpose high power transistor for use in high speed switching applications. Housed in TO-3 case. Also available in chip form using the H9352 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/439 which Semicoa meets in all cases. Generic Part Number: 2N5039 REF: MIL-PRF-19500/439 · · · , -65 to +200 -65 to +200 C C o Data Sheet No. 2N5039 Electrical Characteristics TC = 25oC


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PDF 2N5039 H9352 MIL-PRF-19500/439 MIL-PRF-19500/439 h935
TIC 2260

Abstract:
Text: 2N5038, 2N5039 , 2N6496 File N um ber 698 High-Current, High-Power High-Speed Silicon N-P-N , 2N5038, 2N5039 , 2N6496 E LECTRICAL CH ARACTERISTICS, A t Case Temperature (T q ) - 2 5 0C Unless , VOLTAGE Vdc V CE 56 70 110 140 130 85 100 130 CURRENT Adc c e b 2N5039 Max. 20 2N6496 Min. - , 2N5038, 2N5039 , 2N6496 Fig. 1 - M a xim u m ope ra tin g areas fo r a il types. CASE TE M P E R A , 2N5038, 2N5039 , 2N6496 20 15 ICMAX. (CONTINUOUS) 2N50W , 2N5039 IV S s. C MAX. CONTINUOUS) >v


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PDF 2N5038, 2N5039, 2N6496 TIC 2260 RF Transistor 2n5038 si5464
Not Available

Abstract:
Text: SEM ELA B pic - SELECTO R GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N4938DCSM 2N4939 2N4939DSCM 2N4999 2N5000 2N5000-SM 2N5001 2N5001-SM 2N5001S 2N5002 2N5002-SM 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5015S 2N5023 2N5023S 2N5038 2N5038 C E C C 2N5038 C E C C 2N5039 2N5039 C E C C 2N5039 C E C C 2N5050 2N5051 2N5052 2N5052-SM 2N5058 2N5067 2N5068 2N5069 2N5092 2N5095 2N5097 2N5097S 2N5099 2N5147 2N5148 2N5150 2N5151 2N5151A 2N5151S 2N5152 2N5152-SM 2N5152S 2N5153 2N5153-220M 2N5153-SM 2N5153S 2N5154


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PDF 2N4938DCSM 2N4939 2N4939DSCM 2N4999 2N5000 2N5000-SM 2N5001 2N5001-SM 2N5001S 2N5002
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