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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2N4402 Fairchild Semiconductor Corporation Bristol Electronics 6 - -
2N4402 Central Semiconductor Corp Avnet - $2.89 $2.49
2N4402 Fairchild Semiconductor Corporation Rochester Electronics 4,166 - -
2N4402 NTE Electronics Inc Master Electronics 897 $0.18 $0.12
2N4402 NTE Electronics Inc Farnell element14 1,154 £0.19 £0.17
2N4402 NTE Electronics Inc element14 Asia-Pacific 1,154 $0.84 $0.19
2N4402 NTE Electronics Inc Allied Electronics & Automation - $0.15 $0.15
2N4402 Fairchild Semiconductor Corporation New Advantage Corporation 14 - -
2N4402 D74Z National Semiconductor Corporation Bristol Electronics 42,000 $0.11 $0.02
2N4402RLRA . Bristol Electronics 492 - -
2N4402RLRA ON Semiconductor Rochester Electronics 12,333 $0.04 $0.03
2N4402TF Fairchild Semiconductor Corporation Rochester Electronics 10,000 $0.04 $0.03
2N4402TFR Fairchild Semiconductor Corporation Rochester Electronics 10,500 $0.04 $0.03

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2N4402 datasheet (66)

Part Manufacturer Description Type PDF
2N4402 Central Semiconductor Small Signal Transistors TO-92 Case (Continued) Original PDF
2N4402 Continental Device India PNP SILICON PLANAR EPITAXIAL TRANSISTORS Original PDF
2N4402 Continental Device India NPN PNP SILICON PLANAR EPITAXIAL TRANSISTORS Original PDF
2N4402 Diotec Si-Epitaxial PlanarTransistors Original PDF
2N4402 Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
2N4402 Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
2N4402 Fairchild Semiconductor Small Signal Transistor Original PDF
2N4402 Micro Commercial Components TRANS GP BJT PNP 40V 0.6A 3TO-92 Original PDF
2N4402 On Semiconductor General Purpose Transistors PNP Original PDF
2N4402 Allegro MicroSystems General Purpose Bipolar Transistor, PNP, 40 MinV, TO-92, 3-Pin Scan PDF
2N4402 Central Semiconductor PNP EPOXY - SWITCHING AND GENERAL PURPOSE / SATURATED SWITCH Scan PDF
2N4402 Central Semiconductor PNP Epoxy - Switchin and General Purpose Transistors / Saturated Switch Scan PDF
2N4402 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
2N4402 Crimson Semiconductor Transistor Selection Guide Scan PDF
2N4402 Diodes LEAD MOUNTED TRANSISTORS Scan PDF
2N4402 Fairchild Semiconductor PNP General Purpose Amplifier Scan PDF
2N4402 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N4402 Ferranti Semiconductors E-Line Transistors 1977 Scan PDF
2N4402 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
2N4402 General Electric Semiconductor Data Handbook 1977 Scan PDF

2N4402 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1996 - 2n4403 motorola

Abstract: 2n4402 Diodes Inc. 2N4403 2n4403 2N4403 noise figure
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N4402 /D General Purpose Transistors PNP Silicon 2N4402 2N4403* *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 , Data © Motorola, Inc. 1996 1 2N4402 2N4403 ELECTRICAL CHARACTERISTICS (TA = 25°C unless , = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) hFE 2N4403 2N4402 2N4403 2N4402 2N4403 2N4402 2N4403 Both VCE(sat) - - VBE(sat) 0.75 - 0.95 1.3 0.4 0.75 Vdc 30 30 60 50 100 50 100 20 - -


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PDF 2N4402/D 2N4402 2N4403* 226AA) 2N4402/D* 2n4403 motorola Diodes Inc. 2N4403 2n4403 2N4403 noise figure
2N4403

Abstract: 2N4402 transistor 2n4403 transistor 3050 JL003 4403 transistor
Text:  2N4402 /4403 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter , nA * DC Current Gain tlfe :2N4403 Vce — — 1V, lc=-0.1mA 30 2N4402 Vce = -1V, lc= —1mA 30 2N4403 60 2N4402 Vce=-1 V, lc=-10mA 50 2N4403 100 2N4402 *Vce=-2V, lc = — 150mA 50 150 2N4403 100 300 2N4402 /2N4403 *Vce=-2V, lc=-500mA 20 •Collector-Emitter , , lc=—20mA : 2N4402 f=100MHz 150 MHz 2N4403 200 MHz Turn On Time ton VCC = -30V, Vbe = -2V


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PDF 2N4402/4403 -625mW 2N4403 00/iA, Jl-003 2N4402 transistor 2n4403 transistor 3050 JL003 4403 transistor
2N4403

Abstract: 2N4402 2N4402 2N4403 PNP 2N4403 transistor 2n4403 Transistor 2N4402 st2n4403
Text: ST 2N4402 / 2N4403 PNP Epitaxial Silicon Transistor General purpose transistor Collector , the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 02/12/2005 ST 2N4402 / 2N4403 , ST 2N4403 ST 2N4402 ST 2N4403 ST 2N4402 ST 2N4403 Min. Max. Unit 30 30 60 - - 50 100 - - 150 300 - - - at -VCE=1V, -IC=150mA ST 2N4402 ST 2N4403 hFE , -VBEsat 0.75 0.95 V ST 2N4402 fT ST 2N4403 fT 150 200 - MHz MHz CCBO


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PDF 2N4402 2N4403 2N4403 2N4402 2N4403 PNP 2N4403 transistor 2n4403 Transistor 2N4402 st2n4403
2001 - 100Kx10

Abstract: No abstract text available
Text: 2N4402BU 2N4402TA 2N4402TAR 2N4402TF 2N4402TFR 2N4402_D81Z 2N4402_J14Z back to top © 2007 Fairchild , Code) &3 (3-Digit Date Code) Line 2: 2N Line 3: 4402 2N4402_D81Z Full Production N/A TO-92 3 TAPE REEL 2N4402_J14Z Full Production N/A TO-92 3 BULK * Fairchild 1,000 , 2N4402 2N4402 C BE TO-92 PNP General Purpose Amplifier This device is designed for , Resistance, Junction to Ambient Max 2N4402 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 2001


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PDF 2N4402 2N4402 O-92-3 2N4402BU 2N4402TA 2N4402TAR 2N4402TF 2N4402TFR 100Kx10
1996 - 2n4403 motorola

Abstract: 2N4402 MOTOROLA 2N4403 2N4403
Text: MOTOROLA Order this document by 2N4402 /D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4402 2N4403* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 , , FETs and Diodes Device Data © Motorola, Inc. 1996 1 2N4402 2N4403 ELECTRICAL CHARACTERISTICS , = 1.0 Vdc) 2N4402 2N4403 30 60 - - (IC = 10 mAdc, VCE = 1.0 Vdc) 2N4402 2N4403 50 100 - - (IC = 150 mAdc, VCE = 2.0 Vdc)(1) 2N4402 2N4403 50 100 150 300


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PDF 2N4402/D 2N4402 2N4403* 226AA) 2N4402/D* 2n4403 motorola 2N4402 MOTOROLA 2N4403 2N4403
2N4400 2N4401

Abstract: 2n4401 2N4400 2N4402 2N4403
Text: Package 2N4400, 2N4401 2N4402 , 2N4403 2N4400, 4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N4402 , EMITTER 2 = BASE 3 = COLLECTOR ABSOLUTE MAXIMM RATINGS Rating Symbol 2N4400/01 2N4402 /03 , (j-c) Data Sheet - 83.3 Page 1 of 6 2N4400, 2N4401 2N4402 , 2N4403 Characteristic , <0.75 <0.4 <0.75 V V 0.75 to 0.95 <1.2 0.75 to 0.95 <1.3 V V 2N4400 2N4401 2N4402 , 2N4402 /03 BVCEO* Collector Emitter Voltage IC=1mA, IB =0 Collector Base Voltage IC=100µA, IE =0


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PDF ISO/TS16949 2N4400, 2N4401 2N4402, 2N4403 2N4400/01 2N4402/03 C-120 2N4400 2N4401 2n4401 2N4400 2N4402 2N4403
2N4402

Abstract: No abstract text available
Text: c e = 1 0 Vdc) h FE 2N4403 2N4402 2N4403 2N4402 2N4403 2N4402 2 N4403 Both v CE(sat) VßE(sat) 075 , ollector-Base Capacitance (VC b = 10 Vdc, lE = 0, f - Vdc Vdc MHz 100 MHz) 2N4402 2N4403 Ccb 150 200 8.5 30 pF 1.0 MHz) Ceb ^ie 2N4402 2N4403 750 1.5k 7.5k 15k pF ohm s Em itter-Base Capacitance (V , ) M otorola S m a ll-S ig n a l Transistors, FETs and D iodes D evice D a ta 2 -3 1 2N4402 , c e = 30 Vdc, lc = 150 m Adc, lß i = 15 m A, Iß 2 - 15 m A) Ne 2N4402 2N4403 ^oe 30 60 1.0 250


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PDF 2N4402 2N4403
2N4403

Abstract: 2N4402 2N4403 semtech transistor 2N4403
Text: ST 2N4402 / 2N4403 PNP Epitaxial Silicon Transistor General purpose transistor Collector , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 02/12/2005 ST 2N4402 / 2N4403 , ST 2N4403 ST 2N4402 ST 2N4403 ST 2N4402 ST 2N4403 Min. Max. Unit 30 30 60 - - 50 100 - - 150 300 - - - at -VCE=1V, -IC=150mA ST 2N4402 ST 2N4403 hFE , -VBEsat 0.75 0.95 V ST 2N4402 fT ST 2N4403 fT 150 200 - MHz MHz CCBO


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PDF 2N4402 2N4403 2N4403 2N4403 semtech transistor 2N4403
2001 - Not Available

Abstract: No abstract text available
Text: Transys Electronics L I M I T E D 2N4400, 2N4401 2N4402 , 2N4403 TO-92 Plastic Package C , 2N4402 /03 Collector-Emitter Voltage VCEO 40 40 V Collector-Base Voltage VCBO 60 , ) - 83.3 2N4400, 2N4401 2N4402 , 2N4403 Characteristic Symbol Characteristic D C , =500mA,V CE=2V* 2N4402 /03 BVCEO* >40 >40 V BVCBO >60 >40 V BVEBO >6 >5 , 0.95 <1.2 0.75 to 0.95 <1.3 V V 2N4400 2N4401 2N4402 2N4403 Unit VBE Symbol hFE


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PDF 2N4400, 2N4401 2N4402, 2N4403 2N4400/01 2N4402/03 100mA 500mA
2004 - 2N4403

Abstract: 2N4402 10D3 2N4400 2N4401
Text: 2N4402 , 2N4403 PNP General Purpose Transistors Si-Epitaxial PlanarTransistors PNP , (TA = 25°C) 2N4402 , 2N4403 Collector-Emitter-voltage B open - VCE0 40 V , Umgebungstemperatur gehalten werden 36 General Purpose Transistors 2N4402 , 2N4403 Characteristics (Tj = , Kollektor-Basis-Stromverhältnis - VCE = 1 V, - IC = 0.1 mA 2N4403 hFE 30 ­ ­ - VCE = 1 V, - IC = 1 mA 2N4402 2N4403 hFE hFE 30 60 ­ ­ ­ ­ - VCE = 1 V, - IC = 10 mA 2N4402 2N4403 hFE hFE


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PDF 2N4402, 2N4403 UL94V-0 2N4400, 2N4401 2N4403 2N4402 10D3 2N4400 2N4401
2N4403

Abstract: transistor 2n4403 equivalent 2N4402
Text: ST 2N4402 / 2N4403 PNP Epitaxial Silicon Transistor General purpose transistor Collector , /12/2002 ST 2N4402 / 2N4403 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit , , -IC=1mA ST 2N4402 hFE 30 - - - ST 2N4403 hFE 60 - - - ST 2N4402 hFE 50 - - - ST 2N4403 hFE 100 - - - ST 2N4402 hFE 50 - , MHz ST 2N4402 fT 200 - - MHz CCBO - - 8.5 pF ton - - 35


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PDF 2N4402 2N4403 625mW 150mA, 100MHz 140MHz, 2N4403 transistor 2n4403 equivalent
2N4403

Abstract: 2N4402 2N4403
Text: 2N4402 /4403 GENERAL PURPOSE TRANSISTOR · Collector-Em itter Voltage: Vcco- 40V · Collector D , Cut-off Current Base Cut-off Current DC Current Gain 2N4403 2N4402 2N4403 2N4402 2N4403 2N4402 2N4403 2N4402 /2N4403 Collector-Em itter Saturation Voltage Base-Em itter Saturation Voltage Current-Base Capacitance Current Gain Bandwidth Product : 2N4402 :2N4403 Turn On Tim e Turn O ff Tim e Sym bol BV cbo BVceo , Pulse Test: Pulse W id ths3 0 * . Duty C ycle s 2% 485 ELECTRONICS 2N4402 /4403 DC CURRENT GAIN


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PDF 2N4402/4403 -625mW Ta-25 2N4403 -150mA, -15mA -150mA 2N4402 2N4403
2001 - Not Available

Abstract: No abstract text available
Text: 2N4402 2N4402 C TO-92 BE PNP General Purpose Amplifier This device is designed for , © 2001 Fairchild Semiconductor Corporation Max Units 2N4402 625 5.0 83.3 mW mW/°C °C/W 200 °C/W 2N4402 , Rev A (continued) Electrical Characteristics Symbol TA = , % 2N4402 PNP General Purpose Amplifier (continued) 500 VCE = 5V 400 125 °C 300 200 , VOLTAGE (V) 50 2N4402 PNP General Purpose Amplifier (continued) Typical Characteristics


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PDF 2N4402
Not Available

Abstract: No abstract text available
Text: 2N4402 2N4403* Symbol VCEO v CBO v E BO 'c Pd Pd T j ' T s tg Value -4 0 -4 0 -5.0 -6 0 0 625 5.0 , ) (lc = - 1.0 mAdc, V c e = - 1 . 0 Vdc) 2N4403 2N4402 2N4403 2N4402 2N4403 2N4402 2N4403 Both VcE(sat , 1,0 MHz) In out Im pedance (IC = - 1 . 0 m Adc, V c e = - 1 0 Vdc, f = 1.0 kHz) 2N4402 2N4403 MHz 2N4402 2N4403 Ccb Ceb ^ie 750 1.5k 7.5k 15k 150 200 - - 8.5 30 pF pF ohm s M OTOROLA SM ALL-SIGNAL TRA N SISTO RS, FETs AND D IO D ES 2-31 2N4402 , 2N4403 ELECTRICAL CHARACTERISTICS (continued) (Ta


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PDF 2N4402 2N4403* O-226AA) 2N4402, 2N4403
1998 - 2N4403

Abstract: 2N4402 2N4402 2N4403 transistor 2N4403 transistor 2n4403 equivalent 4403 transistor 4403 transistor 2n4403 datasheet Transistor 2N4402
Text: 2N4402 /4403 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 · , Voltage Collector Cut-off Current Base Cut-off Current %DC Current Gain :2N4403 : 2N4402 :2N4403 : 2N4402 :2N4403 : 2N4402 :2N4403 2N4402 /2N4403 %Collector-Emitter Saturation Voltage %Base-Emitter , Product : 2N4402 :2N4403 Turn On Time COB fT Turn Off Time T OFF T ON %Pulse Test: Pulse , MHz MHz ns 255 ns 2N4402 /4403 PNP EPITAXIAL SILICON TRANSISTOR Samsung Electronics


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PDF 2N4402/4403 625mW 2N4403 Width30s, -150mA, -15mA -500mA, -50mA 2N4402 2N4402 2N4403 transistor 2N4403 transistor 2n4403 equivalent 4403 transistor 4403 transistor 2n4403 datasheet Transistor 2N4402
2001 - 2N4400

Abstract: 2N4401 2N4402 2N4403
Text: 2N4402 , 2N4403 2N4400, 4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N4402 , 4403 PNP SILICON PLANAR , ABSOLUTE MAXIMM RATINGS Rating Symbol 2N4400/01 2N4402 /03 Collector-Emitter Voltage VCEO , Page 1 of 6 2N4400, 2N4401 2N4402 , 2N4403 Characteristic Symbol Characteristic D C , 0.95 <1.2 0.75 to 0.95 <1.3 V V 2N4400 2N4401 2N4402 2N4403 Unit VBE Symbol hFE , =1mA, VCE=10V, f=1KHz hie Continental Device India Limited 2N4402 /03 BVCEO* Collector Emitter


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PDF 2N4400, 2N4401 2N4402, 2N4403 2N4400/01 2N4402/03 C-120 2N4400 2N4401 2N4402 2N4403
n4403

Abstract: 2n4403 motorola 2N4403
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon 2N4402 2N4403 , Transistors, FETs and Diodes Device Data 2N4402 2N4403 ELECTRICAL CHARACTERISTICS H a = 25°C unless , = 0.1 mAdc, V q e = 1.0 Vdc) (IC = 1.0 mAdc, V c e = hFE 2 N4403 2N4402 2N4403 2N4402 2N4403 2 N4402 , 0, f = 1.0 MHz) fT 2N4402 2N4403 150 200 8.5 30 MHz Ccb Ceb he 2N4402 2N4403 fye hfe 2N4402 2 , ignal Transistors, FETs and Diodes Device Data Figure 2. Turn-Off Time 2 -3 3 2N4402 2N4403


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PDF 2N4402 2N4403* 2N4403 n4403 2n4403 motorola
Not Available

Abstract: No abstract text available
Text: 2N4402_4403Rev_1 040206E Continental Device India Limited Data Sheet Page 3 of 5 2N4402 / 2N4403 TO , : Pulse Width < 300µs, Duty Cycle < 2% µ 2N4402_4403Rev_1 040206E Continental Device India Limited , ns ns *Pulse Test: Pulse Width < 300µs, Duty Cycle < 2% µ 2N4402_4403Rev_1 040206E , Equipm ent ( WEEE) . 2N4402_4403Rev_1 040206E Continental Device India Limited Data Sheet , 2N4402_4403Rev_1 040206E Continental Device India Limited Data Sheet Page 5 of 5 Continental Device


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PDF 2N4402 2N4403 C-120 4403Rev 040206E
2004 - Not Available

Abstract: No abstract text available
Text: 2N4402 / 2N4403 PNP Epitaxial Silicon Transistor General purpose transistor Collector , G S P FORM A IS AVAILABLE C C 2N4402 / 2N4403 Characteristics at Tamb=25 OC Symbol Min , - at -VCE=1V, -IC=1mA ST 2N4402 hFE 30 - - - ST 2N4403 hFE 60 - - - ST 2N4402 hFE 50 - - - ST 2N4403 hFE 100 - - - ST 2N4402 hFE 50 - 150 - ST 2N4403 hFE 100 - 300 - ST 2N4403 hFE


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PDF 2N4402 2N4403 625mW 150mA 500mA 150mA, 100MHz 140MHz,
2N4400

Abstract: 2N4401 2N4402 2N4403 X10-4
Text: Transistors- 2N4400, 2N4401, 2N4402 , 2N4403 Silicon Transistors TO-92 The GE/RCA 2N4400, 2N4401 NPN types and 2N4402 , amplifier applications. PNP values are negative; observe 2N4403 PNP types are planar , for general purpose switching and package. MAXIMUM RATINGS, Absolute-Maximum Values: 2N4400 2N4402 , 01E 17933 D Signal Transistors 2N4400, 2N4401, 2N4402 , 2N4403 T 3S /S ELECTRICAL CHARACTERISTICS , UNITS 2N4400 2N4401 2N4402 2N4403 MIN. MAX. MIN. MAX MIN. MAX. MIN. MAX Collector-Emitter


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PDF 0017T35 387508t 2N4400, 2N4401, 2N4402, 2N4403 2N4401 2N4403 2N4400 2N4402 X10-4
transistor 2n4403 equivalent

Abstract: 2N4403 transistor 2n4403 datasheet transistor 2n4403 2N4402 PNP 2N4403
Text: ST 2N4402 / 2N4403 PNP Epitaxial Silicon Transistor General purpose transistor Collector , /2002 ST 2N4402 / 2N4403 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit , , -IC=1mA ST 2N4402 hFE 30 - - - ST 2N4403 hFE 60 - - - ST 2N4402 hFE 50 - - - ST 2N4403 hFE 100 - - - ST 2N4402 hFE 50 - , MHz ST 2N4402 fT 200 - - MHz CCBO - - 8.5 pF ton - - 35


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PDF 2N4402 2N4403 625mW 150mA, 100MHz 140MHz, transistor 2n4403 equivalent 2N4403 transistor 2n4403 datasheet transistor 2n4403 PNP 2N4403
2n3904 418

Abstract: 2N3905 Equivalent 2N4401 2N4400 2N4126 2N4125 2N4124 2N4123 2N3906 2N3905
Text: 2N4402 PNP 40 50 150 150 150 15 300 5.0 600 350 2N4403 PNP 40 100 300 150 2 ■SPlli 150 15 350 5.0 , , 15mA 2N4402 2N4401 40 100-300 150mA 1 0.4 150mA, 15mA 2N4403 2N4402 40 50-150 150mA 2 0.4 150mA , 2N4400 NPN 40 35 255 150 15 30 2.0 2N4401 NPN 40 35 255 150 15 WWW 30 2.0 2N4402 PNP 40 35 255 150 15 , 2N4402 2N4403 The General Electric 2N4402 and 2N4403 are silicon PNP planar epitaxial passivateci , . * electrical characteristics: (Ta = 25°C unless otherwise specified) 2N4402 2N4403 STATIC CHARACTERISTICS


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PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2n3904 418 2N3905 Equivalent 2N4401
2013 - Not Available

Abstract: No abstract text available
Text: 2N4402 2N4403 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4402 and 2N4403 are PNP silicon transistors designed for general purpose amplifier and switching applications. NPN complementary types are 2N4400 and 2N4401. MARKING: FULL PART , =30V, IC=150mA, IB1=IB2=15mA UNITS V V V mA mW °C 40 40 5.0 600 625 -65 to +150 2N4402 , μA V V V V V V V R1 (20-June 2013) 2N4402 2N4403 SILICON PNP TRANSISTORS TO


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PDF 2N4402 2N4403 2N4402 2N4403 2N4400 2N4401. 140kHz 150mA,
2001 - MPS-3638A

Abstract: mps3638a
Text: these curves, a high-gain and a low-gain unit were selected from the 2N4402 line, and the same units , 5k 2k 1k 500 200 3.0 5.0 7.0 10 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2N4402 UNIT 1 2N4402 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc , 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2N4402 UNIT 1 2N4402 UNIT 2 500 Figure 11. Input Impedance 100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 2N4402 UNIT 1 2N4402


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PDF MPS3638A O-226AA) MPS-3638A mps3638a
2001 - 2N4402

Abstract: No abstract text available
Text: 2N4402 2N4402 C TO-92 BE PNP General Purpose Amplifier This device is designed for , Semiconductor Corporation Max Units 2N4402 625 5.0 83.3 mW mW/°C °C/W 200 °C/W 2N4402 , 30 ns *Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0% 2N4402 PNP General Purpose , 8 4 0 0.1 C ob 1 10 REVERSE BIAS VOLTAGE (V) 50 2N4402 PNP General Purpose , TEMPERATURE ( oC) 125 150 2N4402 PNP General Purpose Amplifier (continued) hoe h re 2


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PDF 2N4402 2N4402
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