The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
TK2R4A08QM TK2R4A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
XPN1300ANC XPN1300ANC ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
TK155U65Z TK155U65Z ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 18 A, 0.155 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
TK6R9P08QM TK6R9P08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
XPW4R10ANB XPW4R10ANB ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 70 A, 0.0041 Ω@10V, DSOP Advance(WF)L Visit Toshiba Electronic Devices & Storage Corporation
TK5R1A08QM TK5R1A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

2N4401 NPN Switching Transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - 2N4401 NPN Switching Transistor

Abstract: Transistor 2N4401 2N4401 npn, transistor, sc 103 b transistor 2n4403 equivalent high gain low voltage PNP transistor TO-92 2N4401 TO-92 NPN switching transistor 2N4403 transistor 2N4403 2N4403
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4401 NPN switching transistor , specification NPN switching transistor 2N4401 FEATURES PINNING · High current (max. 600 mA , Semiconductors Product specification NPN switching transistor 2N4401 THERMAL CHARACTERISTICS SYMBOL , Semiconductors Product specification NPN switching transistor 2N4401 MGD811 300 handbook, full , Product specification NPN switching transistor 2N4401 PACKAGE OUTLINE Plastic single-ended


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PDF M3D186 2N4401 2N4403. MAM279 SCA76 R75/04/pp7 2N4401 NPN Switching Transistor Transistor 2N4401 2N4401 npn, transistor, sc 103 b transistor 2n4403 equivalent high gain low voltage PNP transistor TO-92 2N4401 TO-92 NPN switching transistor 2N4403 transistor 2N4403 2N4403
1999 - 2N4401 transistor

Abstract: 2N4401 NPN Switching Transistor 2N4401 2N4403 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4401 NPN switching transistor , specification NPN switching transistor 2N4401 FEATURES PINNING · High current (max. 600 mA , NPN switching transistor 2N4401 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER , NPN switching transistor 2N4401 PACKAGE OUTLINE Plastic single-ended leaded (through hole , . 1999 Apr 23 3 Philips Semiconductors Product specification NPN switching transistor


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PDF M3D186 2N4401 2N4403. MAM279 SCA63 115002/00/03/pp8 2N4401 transistor 2N4401 NPN Switching Transistor 2N4401 2N4403 BP317
1997 - Transistor 2N4401

Abstract: 2N4401 NPN Switching Transistor 2N4401 2N4403
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4401 NPN switching transistor , May 07 Philips Semiconductors Product specification NPN switching transistor 2N4401 , Philips Semiconductors Product specification NPN switching transistor 2N4401 LIMITING VALUES , specification NPN switching transistor 2N4401 CHARACTERISTICS Tj = 25 °C unless otherwise specified , specification NPN switching transistor 2N4401 MGD811 300 handbook, full pagewidth hFE VCE =


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PDF M3D186 2N4401 2N4403. MAM279 SCA54 117047/00/02/pp8 Transistor 2N4401 2N4401 NPN Switching Transistor 2N4401 2N4403
Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 2N4401 NPN switching transistor Product specification , collector base emitter DESCRIPTION 2N4401 DESCRIPTION NPN switching transistor in a TO-92; SOT54 , iconductors Product specification NPN switching transistor 2N4401 V BB V CC V0 (p ro b e , Semiconductors Product specification NPN switching transistor FEATURES · High current (max. 600 mA) · Low , . 1999 A pr 23 4 Philips S em iconductors Product specification NPN switching transistor


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PDF 2N4401 2N4401 2N4403. 115002/00/03/pp8
2009 - 2n4401 052

Abstract: 2N4401 NPN Switching Transistor UTC 2N4401 2N4401G 2n4401 amplifier 2N4401G TO-92 transistor 2n4401 datasheet 2N4401 2N4401L-T92-B 2N4401-T92-B
Text: UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER , -052.C 2N4401 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified , www.unisonic.com.tw 5 of 6 QW-R201-052.C 2N4401 NPN SILICON TRANSISTOR UTC assumes no responsibility for , 15 ns 20 ns 225 ns 30 ns 2 of 6 QW-R201-052.C 2N4401 NPN SILICON TRANSISTOR TEST CIRCUITS 30V 200 16V 0 220ns 1K 500 Figure1. Saturated Turn-On Switching


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PDF 2N4401 2N4401 500mA. 2N4401L 2N4401G 2N4401-T92-B 2N4401-T92-K 2N4401L-T92-B 2N4401L-T92-K 2N4401G-T92-B 2n4401 052 2N4401 NPN Switching Transistor UTC 2N4401 2N4401G 2n4401 amplifier 2N4401G TO-92 transistor 2n4401 datasheet 2N4401L-T92-B 2N4401-T92-B
2005 - 2n4401 052

Abstract: 2N4401L 2N4401 transistor NPN Transistor TO92 25v 2N4401 2N4401L-T92-B 2N4401-T92-B 2N4401-T92-K B1I Transistor 3 pin 2N4401 NPN Switching Transistor
Text: UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER , Co., Ltd 1 of 6 QW-R201-052,B 2N4401 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta , 2N4401 NPN SILICON TRANSISTOR TEST CIRCUIT 30V 200 16V 0 1K 220ns 500 Figure1 , 6 QW-R201-052,B 2N4401 NPN SILICON TRANSISTOR Typical Pulsed Current Gain vs Collector , 0.1 1 10 Reverse Bias Voltage (V) 100 4 of 6 QW-R201-052,B 2N4401 NPN SILICON


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PDF 2N4401 2N4401 500mA. 2N4401L 2N4401-T92-B 2N4401L-T92-B 2N4401-T92-K 2N4401L-T92-K 2N4401L-T92-R QW-R201-052 2n4401 052 2N4401L 2N4401 transistor NPN Transistor TO92 25v 2N4401L-T92-B 2N4401-T92-B 2N4401-T92-K B1I Transistor 3 pin 2N4401 NPN Switching Transistor
2004 - 2n4401 052

Abstract: UTC 2N4401
Text: UTC 2N4401 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The , . 2 QW-R201-052,A UTC 2N4401 TEST CIRCUIT NPN EPITAXIAL SILICON TRANSISTOR 30V 200 16V 0 , . 3 QW-R201-052,A UTC 2N4401 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS , ) UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R201-052,A UTC 2N4401 NPN EPITAXIAL SILICON TRANSISTOR Switching Times vs Collector Current 400 Ic 10 Turn On and Turn Off Times vs Collector Current


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PDF 2N4401 2N4401 500mA. QW-R201-052 2n4401 052 UTC 2N4401
2002 - Not Available

Abstract: No abstract text available
Text: 2N4401 NPN EPITAXIAL SILICON TRANSISTOR Switching Times vs Collector Current Turn On and Turn Off , UTC 2N4401 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The , -052,A UTC 2N4401 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS Collector-Emitter , Voltage Base-Emitter Saturation Voltage NPN EPITAXIAL SILICON TRANSISTOR SYMBOL TEST CONDITIONS , 15 20 225 30 ns ns ns ns CO., LTD. 2 QW-R201-052,A UTC 2N4401 NPN EPITAXIAL


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PDF 2N4401 2N4401 500mA. QW-R201-052
2004 - 2N4401 NPN Switching Transistor

Abstract: 2N4401 NATIONAL SEMICONDUCTOR pin configuration transistor 2n4401 2N4401 VISHAY CONNECTORS 2N4401-BULK 2N4401-TAP 2N4403 MMBT4401 2n4401 configuration
Text: 2N4401 Vishay Semiconductors Small Signal Transistor ( NPN ) Features C 3 · NPN Silicon Epitaxial Transistor for switching and amplifier applications. · As complementary type, the PNP transistor 2N4403 is recommended. · On special request, this transistor is also manufactured in the pin configuration TO-18. · This transistor is also available in the SOT-23 case with the type designation MMBT4401 , Part Type differentiation 2N4401 Ordering code Remarks 2N4401 -BULK or 2N4401 -TAP Bulk


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PDF 2N4401 2N4403 OT-23 MMBT4401. 2N4401-BULK 2N4401-TAP D-74025 27-Oct-04 2N4401 NPN Switching Transistor 2N4401 NATIONAL SEMICONDUCTOR pin configuration transistor 2n4401 2N4401 VISHAY CONNECTORS 2N4401-TAP MMBT4401 2n4401 configuration
2004 - pin configuration transistor 2n4401

Abstract: 2N4401 NATIONAL SEMICONDUCTOR 2n4401 configuration 2N4401 - TRANSISTOR 2N4403 NATIONAL SEMICONDUCTOR
Text: 2N4401 Vishay Semiconductors Small Signal Transistor ( NPN ) Features · NPN Silicon Epitaxial Transistor for switching and amplifier applications. · As complementary type, the PNP transistor 2N4403 is recommended. · On special request, this transistor is also manufactured in the pin configuration TO-18. · This transistor is also available in the SOT-23 case with the type designation MMBT4401. C 1 2 B 1 18855 2 , : BULK / 5 k per container 20 k/box TAP / 4 k per Ammopack 20 k/box Parts Table Part 2N4401 Type


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PDF 2N4401 2N4403 OT-23 MMBT4401. 2N4401 2N4401-BULK 2N4401-TAP D-74025 14-Oct-04 pin configuration transistor 2n4401 2N4401 NATIONAL SEMICONDUCTOR 2n4401 configuration 2N4401 - TRANSISTOR 2N4403 NATIONAL SEMICONDUCTOR
2001 - Y3 SOT23

Abstract: SOT23 MARK Y3 TRANSISTOR 2N 4401 2n4401 2n4401 cross W3 marking SOT-223
Text: 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 E SOT-23 Mark: 2X B NPN , % 2N4401 / MMBT4401 NPN General Purpose Amplifier (continued) Typical Characteristics 500 V CE = , VOLTAGE (V) 100 2N4401 / MMBT4401 NPN General Purpose Amplifier (continued) Typical , 50 75 100 o TEMPERATURE ( C) 125 150 2N4401 / MMBT4401 NPN General Purpose Amplifier , VOLTAGE (V) 35 h re h ie I C = 10 mA T A = 25oC h fe 2N4401 / MMBT4401 NPN General Purpose


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PDF 2N4401 MMBT4401 2N4401 OT-23 2N4401RM 2N4401RA O-92-3 AN-9006: Y3 SOT23 SOT23 MARK Y3 TRANSISTOR 2N 4401 2n4401 cross W3 marking SOT-223
2004 - 2N4401 NATIONAL SEMICONDUCTOR

Abstract: pin configuration transistor 2n4401 2N4401 2N4401 transistor 2N4401-BULK 2N4401-TAP 2N4403 MMBT4401 2N4401 NPN Switching Transistor 2n4401 configuration
Text: 2N4401 VISHAY Vishay Semiconductors Small Signal Transistor ( NPN ) Features · NPN Silicon Epitaxial Transistor for switching and amplifier applications. · As complementary type, the PNP transistor 2N4403 is recommended. · On special request, this transistor is also manufactured in the pin configuration TO-18. · This transistor is also available in the SOT-23 case with the type designation MMBT4401 , Parts Table Part 2N4401 Type differentiation hFE, 100 to 300 @ 150 mA Ordering code Remarks


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PDF 2N4401 2N4403 OT-23 MMBT4401, 2N4401-BULK D-74025 01-Sep-04 2N4401 NATIONAL SEMICONDUCTOR pin configuration transistor 2n4401 2N4401 2N4401 transistor 2N4401-TAP MMBT4401 2N4401 NPN Switching Transistor 2n4401 configuration
2004 - 2N4403 NATIONAL SEMICONDUCTOR

Abstract: 2N4401 NATIONAL SEMICONDUCTOR
Text: VISHAY 2N4401 Vishay Semiconductors Small Signal Transistor ( NPN ) Features · NPN Silicon Epitaxial Transistor for switching and amplifier applications. · As complementary type, the PNP transistor 2N4403 is recommended. · On special request, this transistor is also manufactured in the pin configuration TO-18. · This transistor is also available in the SOT-23 case with the type designation MMBT4401 , -Aug-04 www.vishay.com 1 2N4401 Vishay Semiconductors Electrical DC Characteristics Parameter Collector - base


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PDF 2N4401 2N4403 OT-23 MMBT4401, D-74025 18-Aug-04 2N4403 NATIONAL SEMICONDUCTOR 2N4401 NATIONAL SEMICONDUCTOR
2001 - Not Available

Abstract: No abstract text available
Text: 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 E SOT-23 Mark: 2X B NPN , % 2N4401 / MMBT4401 NPN General Purpose Amplifier (continued) Typical Characteristics 500 V CE = , VOLTAGE (V) 100 2N4401 / MMBT4401 NPN General Purpose Amplifier (continued) Typical , 50 75 100 o TEMPERATURE ( C) 125 150 2N4401 / MMBT4401 NPN General Purpose Amplifier , VOLTAGE (V) 35 h re h ie I C = 10 mA T A = 25oC h fe 2N4401 / MMBT4401 NPN General Purpose


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PDF 2N4401 MMBT4401 2N4401 OT-23 150or
2001 - 2n4401 331

Abstract: SOT-23 2N4401 2n4401 052 mark 2x sot 2N4401 CBVK741B019 F63TNR MMBT4401 PN2222N 2N4401 NPN Switching Transistor
Text: µA ICEX Collector Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1 2N4401 / MMBT4401 NPN , TEMPERATURE (° C) 150 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 2N4401 / MMBT4401 NPN General , 50 75 100 o TEMPERATURE ( C) 125 150 1000 2N4401 / MMBT4401 NPN General Purpose , 1k 30 V 1.0 K 0 200ns 50 FIGURE 2: Saturated Turn-Off Switching Time 37 2N4401 , 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 SOT-23 E B Mark: 2X


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PDF 2N4401 MMBT4401 2N4401 OT-23 2n4401 331 SOT-23 2N4401 2n4401 052 mark 2x sot CBVK741B019 F63TNR MMBT4401 PN2222N 2N4401 NPN Switching Transistor
2001 - SOT-23 2N4401

Abstract: 2N4401 transistor 2n4401 331 MMBT4401 TO-92 2N4401 CBVK741B019 F63TNR MMBT4401 PN2222N
Text: µA ICEX Collector Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1 2N4401 / MMBT4401 NPN , TEMPERATURE (° C) 150 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 2N4401 / MMBT4401 NPN General , 50 75 100 o TEMPERATURE ( C) 125 150 1000 2N4401 / MMBT4401 NPN General Purpose , 1k 30 V 1.0 K 0 200ns 50 FIGURE 2: Saturated Turn-Off Switching Time 37 2N4401 , 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 SOT-23 E B Mark: 2X


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PDF 2N4401 MMBT4401 2N4401 OT-23 SOT-23 2N4401 2N4401 transistor 2n4401 331 MMBT4401 TO-92 CBVK741B019 F63TNR MMBT4401 PN2222N
2012 - Not Available

Abstract: No abstract text available
Text: 2N4401 NPN Silicon Transistor Descriptions PIN Connection • General purpose application • Switching application C Features B B C E • Low Leakage current • Low , -92 Ordering Information Type NO. Marking Package Code 2N4401 2N4401 TO-92 Absolute maximum , * : Single pulse, tp= 300 ㎲ KSD-T0A078-000 1 2N4401 Electrical Characteristics Characteristic , =150mAdc, IB1=IB2=15mAdc KSD-T0A078-000 2 2N4401 Fig. 2 hFE - IC Fig. 3 IC - VCE(SAT) Fig. 4 IC â


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PDF 2N4401 2N4403 150ts KSD-T0A078-000
2002 - transistor 2N3563

Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
Text: . Switching Transistors . NPN GPA , PN3638A PN3640 PN3640 PN3642 PN3642 2N4401 PN3644 PN3645 PN2369 2N3663 TN2907A PN2907A PN2907A TN2219A , 2N4209 2N4220 2N4220 2N4221 2N4222 2N4223 Recommended Fairchild Device PN4091 2N4400 2N4400 2N4401 2N4401 , 2N4400 2N4401 2N4402 2N4403 2N4404 2N4405 2N4406 2N4407 2N4410 2N4416 2N4416 2N4418 2N4419 2N4420


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2005 - 2n4401 rohm

Abstract: No abstract text available
Text: SST4401 / MMST4401 / 2N4401 Transistors NPN Medium Power Transistor ( Switching ) SST4401 / MMST4401 / 2N4401 zFeatures 1) BVCEO>40V (IC=1mA) 2) Complements the SST4403 / MMST4403 / PN4403 , 3000 2N4401 TO-92 - T93 3000 (1) (3) All terminals have the same dimensions +0.1 ROHM : SST3 , 2.3 0.4 +0.1 -0.05 4.8±0.2 0.15 -0.06 (1) Emitter (2) Base (3) Collector 2N4401 4.8±0.2 3.7±0.2 Collector power dissipation SST4401 MMST4401 SST4401 MMST4401 2N4401 (12.7Min


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PDF SST4401 MMST4401 2N4401 SST4403 MMST4403 PN4403. SST4401 2n4401 rohm
2001 - 2N4401

Abstract: 2N4401TAR 2n4401 amplifier 2N4401 FAIRCHILD J60Z SOT-23 2N4401
Text: 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 E SOT-23 Mark: 2X B NPN , % 2N4401 / MMBT4401 NPN General Purpose Amplifier (continued) Typical Characteristics 500 V CE = , VOLTAGE (V) 100 2N4401 / MMBT4401 NPN General Purpose Amplifier (continued) Typical , 50 75 100 o TEMPERATURE ( C) 125 150 2N4401 / MMBT4401 NPN General Purpose Amplifier , VOLTAGE (V) 35 h re h ie I C = 10 mA T A = 25oC h fe 2N4401 / MMBT4401 NPN General Purpose


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PDF 2N4401 MMBT4401 2N4401 OT-23 150ct O-92-3 AN-9006: 2N4401BU 2N4401TAR 2n4401 amplifier 2N4401 FAIRCHILD J60Z SOT-23 2N4401
2004 - PNP 2N4403

Abstract: 2N4401 2n4403 configuration 2N4403 2N4401 520 2n4401 configuration
Text: 2N4401 & 2N4403 General Purpose Switching Transistors Features: · NPN /PNP Silicon Planar Epitaxial Transistors. · General purpose Switching Applications. · 2N 4401 Type NPN . · 2N 4403 Type PNP. 2N4401 NPN TO-92 2N4403 PNP Dimensions Minimum Maximum A 4.32 5.33 B 4.45 , Emitter 2 = Base 3 = Collector Page 1 31/05/05 V1.0 2N4401 & 2N4403 General Purpose Switching , Width: 300µs, Duty 2.0% Page 2 31/05/05 V1.0 2N4401 & 2N4403 General Purpose Switching


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PDF 2N4401 2N4403 2N4401 2N4403 PNP 2N4403 2n4403 configuration 2N4401 520 2n4401 configuration
2001 - Not Available

Abstract: No abstract text available
Text: 2N4401 / MMBT4401 NPN General Purpose Amplifier µA ON CHARACTERISTICS* hFE DC Current Gain , 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 2N4401 / MMBT4401 NPN General Purpose Amplifier , TEMPERATURE ( C) 125 150 1000 2N4401 / MMBT4401 NPN General Purpose Amplifier (continued , 20 25 30 VCE - COLLECTOR VOLTAGE (V) 35 100 2N4401 / MMBT4401 NPN General Purpose , „¦ 2N4401 / MMBT4401 NPN General Purpose Amplifier TRADEMARKS The following are registered and


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PDF 2N4401 MMBT4401 2N4401 OT-23
2001 - 2N4401

Abstract: MMBT4401 2N4401 FAIRCHILD 2N4401, fairchild
Text: µA ICEX Collector Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1 2N4401 / MMBT4401 NPN , TEMPERATURE (° C) 150 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 2N4401 / MMBT4401 NPN General , 50 75 100 o TEMPERATURE ( C) 125 150 1000 2N4401 / MMBT4401 NPN General Purpose , 1k 30 V 1.0 K 0 200ns 50 FIGURE 2: Saturated Turn-Off Switching Time 37 2N4401 , 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 SOT-23 E B Mark: 2X


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PDF 2N4401 MMBT4401 2N4401 OT-23 MMBT4401 2N4401 FAIRCHILD 2N4401, fairchild
1996 - transistor mps6530 equivalent

Abstract: transistor 2n4401 equivalent transistor 2n4400 equivalent 2N4400 2N4401 MPS6530 2n4401 motorola charge 2n4401 2n4401 equivalent transistor
Text: Transistor MPS6530 NPN Silicon COLLECTOR 3 2 BASE 1 2 1 EMITTER 3 CASE 29­04, STYLE 1 , CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) SWITCHING TIME EQUIVALENT TEST , both the 2N4400 and 2N4401 lines, and the This group of graphs illustrates the relationship between , 50 k hie , INPUT IMPEDANCE (OHMS) hfe , CURRENT GAIN 200 100 70 2N4401 UNIT 1 2N4401 , 20 k 10 k 5.0 k 2.0 k 1.0 k 500 5.0 7.0 10 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1


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PDF MPS6530/D MPS6530 226AA) MPS6530/D* transistor mps6530 equivalent transistor 2n4401 equivalent transistor 2n4400 equivalent 2N4400 2N4401 MPS6530 2n4401 motorola charge 2n4401 2n4401 equivalent transistor
2014 - Not Available

Abstract: No abstract text available
Text: 2N4401 NPN silicon transistor and one complementary isolated 2N4403 PNP silicon transistor , CHARACTERISTICS PER TRANSISTOR : (TA=25°C unless otherwise noted) NPN (Q1) PNP (Q2) SYMBOL TEST CONDITIONS , CMLT4413 SURFACE MOUNT SILICON DUAL, COMPLEMENTARY TRANSISTOR SOT-563 CASE w w w. c e n t , device is designed for small signal general purpose amplifier and switching applications. MARKING , Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD PD TJ, Tstg ΘJA NPN (Q1) 60


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PDF CMLT4413 OT-563 2N4401 2N4403 150mA,
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