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Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
TK2R4A08QM TK2R4A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
XPN1300ANC XPN1300ANC ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
TK155U65Z TK155U65Z ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 18 A, 0.155 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
TK6R9P08QM TK6R9P08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
XPW4R10ANB XPW4R10ANB ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 70 A, 0.0041 Ω@10V, DSOP Advance(WF)L Visit Toshiba Electronic Devices & Storage Corporation
TK5R1A08QM TK5R1A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

2N4401 - TRANSISTOR Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - 2N4401 NPN Switching Transistor

Abstract: 2N4401 NATIONAL SEMICONDUCTOR pin configuration transistor 2n4401 2N4401 VISHAY CONNECTORS 2N4401-BULK 2N4401-TAP 2N4403 MMBT4401 2n4401 configuration
Text: 2N4401 Vishay Semiconductors Small Signal Transistor (NPN) Features C 3 · NPN Silicon Epitaxial Transistor for switching and amplifier applications. · As complementary type, the PNP transistor 2N4403 is recommended. · On special request, this transistor is also manufactured in the pin configuration TO-18. · This transistor is also available in the SOT-23 case with the type designation MMBT4401 , -Oct-04 2N4401 Vishay Semiconductors Duty cycle = 2 % 1 to 100 µs + 30 V 200 +16 V 1 k 0 C S


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PDF 2N4401 2N4403 OT-23 MMBT4401. 2N4401-BULK 2N4401-TAP D-74025 27-Oct-04 2N4401 NPN Switching Transistor 2N4401 NATIONAL SEMICONDUCTOR pin configuration transistor 2n4401 2N4401 VISHAY CONNECTORS 2N4401-TAP MMBT4401 2n4401 configuration
2004 - pin configuration transistor 2n4401

Abstract: 2N4401 NATIONAL SEMICONDUCTOR 2n4401 configuration 2N4401 - TRANSISTOR 2N4403 NATIONAL SEMICONDUCTOR
Text: 2N4401 Vishay Semiconductors Small Signal Transistor (NPN) Features · NPN Silicon Epitaxial Transistor for switching and amplifier applications. · As complementary type, the PNP transistor 2N4403 is recommended. · On special request, this transistor is also manufactured in the pin configuration TO-18. · This transistor is also available in the SOT-23 case with the type designation MMBT4401. C 1 2 B 1 18855 2 , Rev. 1.2, 14-Oct-04 2N4401 Vishay Semiconductors Duty cycle = 2 % 1 to 100 µs +16 V 0 -2 V < 2


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PDF 2N4401 2N4403 OT-23 MMBT4401. 2N4401 2N4401-BULK 2N4401-TAP D-74025 14-Oct-04 pin configuration transistor 2n4401 2N4401 NATIONAL SEMICONDUCTOR 2n4401 configuration 2N4401 - TRANSISTOR 2N4403 NATIONAL SEMICONDUCTOR
2004 - 2N4401 NATIONAL SEMICONDUCTOR

Abstract: pin configuration transistor 2n4401 2N4401 2N4401 transistor 2N4401-BULK 2N4401-TAP 2N4403 MMBT4401 2N4401 NPN Switching Transistor 2n4401 configuration
Text: 2N4401 VISHAY Vishay Semiconductors Small Signal Transistor (NPN) Features · NPN Silicon Epitaxial Transistor for switching and amplifier applications. · As complementary type, the PNP transistor 2N4403 is recommended. · On special request, this transistor is also manufactured in the pin configuration TO-18. · This transistor is also available in the SOT-23 case with the type designation MMBT4401 , -Sep-04 2N4401 VISHAY Vishay Semiconductors Duty cycle = 2 % 1 to 100 µs + 30 V 200 +16 V 1 k


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PDF 2N4401 2N4403 OT-23 MMBT4401, 2N4401-BULK D-74025 01-Sep-04 2N4401 NATIONAL SEMICONDUCTOR pin configuration transistor 2n4401 2N4401 2N4401 transistor 2N4401-TAP MMBT4401 2N4401 NPN Switching Transistor 2n4401 configuration
2004 - 2N4401 NPN Switching Transistor

Abstract: Transistor 2N4401 2N4401 npn, transistor, sc 103 b transistor 2n4403 equivalent high gain low voltage PNP transistor TO-92 2N4401 TO-92 NPN switching transistor 2N4403 transistor 2N4403 2N4403
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4401 NPN switching transistor , specification NPN switching transistor 2N4401 FEATURES PINNING · High current (max. 600 mA , Semiconductors Product specification NPN switching transistor 2N4401 THERMAL CHARACTERISTICS SYMBOL , Semiconductors Product specification NPN switching transistor 2N4401 MGD811 300 handbook, full , Product specification NPN switching transistor 2N4401 PACKAGE OUTLINE Plastic single-ended


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PDF M3D186 2N4401 2N4403. MAM279 SCA76 R75/04/pp7 2N4401 NPN Switching Transistor Transistor 2N4401 2N4401 npn, transistor, sc 103 b transistor 2n4403 equivalent high gain low voltage PNP transistor TO-92 2N4401 TO-92 NPN switching transistor 2N4403 transistor 2N4403 2N4403
2009 - 2n4401 052

Abstract: 2N4401 NPN Switching Transistor UTC 2N4401 2N4401G 2n4401 amplifier 2N4401G TO-92 transistor 2n4401 datasheet 2N4401 2N4401L-T92-B 2N4401-T92-B
Text: UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free: 2N4401L Halogen-free:2N4401G ORDERING INFORMATION Normal 2N4401 , -052.C 2N4401 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified , www.unisonic.com.tw 5 of 6 QW-R201-052.C 2N4401 NPN SILICON TRANSISTOR UTC assumes no responsibility for


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PDF 2N4401 2N4401 500mA. 2N4401L 2N4401G 2N4401-T92-B 2N4401-T92-K 2N4401L-T92-B 2N4401L-T92-K 2N4401G-T92-B 2n4401 052 2N4401 NPN Switching Transistor UTC 2N4401 2N4401G 2n4401 amplifier 2N4401G TO-92 transistor 2n4401 datasheet 2N4401L-T92-B 2N4401-T92-B
2004 - 2n4401 052

Abstract: UTC 2N4401
Text: UTC 2N4401 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up , . 2 QW-R201-052,A UTC 2N4401 TEST CIRCUIT NPN EPITAXIAL SILICON TRANSISTOR 30V 200 16V 0 , . 3 QW-R201-052,A UTC 2N4401 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS , µA V V 60 40 UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-052,A UTC 2N4401


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PDF 2N4401 2N4401 500mA. QW-R201-052 2n4401 052 UTC 2N4401
2004 - 2N4403 NATIONAL SEMICONDUCTOR

Abstract: 2N4401 NATIONAL SEMICONDUCTOR
Text: VISHAY 2N4401 Vishay Semiconductors Small Signal Transistor (NPN) Features · NPN Silicon Epitaxial Transistor for switching and amplifier applications. · As complementary type, the PNP transistor 2N4403 is recommended. · On special request, this transistor is also manufactured in the pin , -Aug-04 www.vishay.com 1 2N4401 Vishay Semiconductors Electrical DC Characteristics Parameter Collector - base , Document Number 85111 Rev. 1.2, 18-Aug-04 VISHAY 2N4401 Vishay Semiconductors Duty cycle = 2 % 1


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PDF 2N4401 2N4403 OT-23 MMBT4401, D-74025 18-Aug-04 2N4403 NATIONAL SEMICONDUCTOR 2N4401 NATIONAL SEMICONDUCTOR
2005 - 2n4401 052

Abstract: 2N4401L 2N4401 transistor NPN Transistor TO92 25v 2N4401 2N4401L-T92-B 2N4401-T92-B 2N4401-T92-K B1I Transistor 3 pin 2N4401 NPN Switching Transistor
Text: UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector , Co., Ltd 1 of 6 QW-R201-052,B 2N4401 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta , 2N4401 NPN SILICON TRANSISTOR TEST CIRCUIT 30V 200 16V 0 1K 220ns 500 Figure1 , 6 QW-R201-052,B 2N4401 NPN SILICON TRANSISTOR Typical Pulsed Current Gain vs Collector


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PDF 2N4401 2N4401 500mA. 2N4401L 2N4401-T92-B 2N4401L-T92-B 2N4401-T92-K 2N4401L-T92-K 2N4401L-T92-R QW-R201-052 2n4401 052 2N4401L 2N4401 transistor NPN Transistor TO92 25v 2N4401L-T92-B 2N4401-T92-B 2N4401-T92-K B1I Transistor 3 pin 2N4401 NPN Switching Transistor
1999 - 2N4401 transistor

Abstract: 2N4401 NPN Switching Transistor 2N4401 2N4403 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4401 NPN switching transistor , specification NPN switching transistor 2N4401 FEATURES PINNING · High current (max. 600 mA , NPN switching transistor 2N4401 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER , NPN switching transistor 2N4401 PACKAGE OUTLINE Plastic single-ended leaded (through hole , transistor 2N4401 NOTES 1999 Apr 23 7 Philips Semiconductors ­ a worldwide company Argentina


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PDF M3D186 2N4401 2N4403. MAM279 SCA63 115002/00/03/pp8 2N4401 transistor 2N4401 NPN Switching Transistor 2N4401 2N4403 BP317
2002 - Not Available

Abstract: No abstract text available
Text: UTC 2N4401 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up , -052,A UTC 2N4401 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS Collector-Emitter , 2N4401 NPN EPITAXIAL SILICON TRANSISTOR Switching Times vs Collector Current Turn On and Turn Off , 0.1 0.1 µA µA 60 40 V V CO., LTD. 1 QW-R201-052,A UTC 2N4401 PARAMETER


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PDF 2N4401 2N4401 500mA. QW-R201-052
1997 - Transistor 2N4401

Abstract: 2N4401 NPN Switching Transistor 2N4401 2N4403
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4401 NPN switching transistor , May 07 Philips Semiconductors Product specification NPN switching transistor 2N4401 , Philips Semiconductors Product specification NPN switching transistor 2N4401 LIMITING VALUES , specification NPN switching transistor 2N4401 CHARACTERISTICS Tj = 25 °C unless otherwise specified , specification NPN switching transistor 2N4401 MGD811 300 handbook, full pagewidth hFE VCE =


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PDF M3D186 2N4401 2N4403. MAM279 SCA54 117047/00/02/pp8 Transistor 2N4401 2N4401 NPN Switching Transistor 2N4401 2N4403
2012 - Not Available

Abstract: No abstract text available
Text: 2N4401 NPN Silicon Transistor Descriptions PIN Connection • General purpose application , =150mAdc, IB1=IB2=15mAdc KSD-T0A078-000 2 2N4401 Fig. 2 hFE - IC Fig. 3 IC - VCE(SAT) Fig. 4 IC â , -92 Ordering Information Type NO. Marking Package Code 2N4401 2N4401 TO-92 Absolute maximum , * : Single pulse, tp= 300 ㎲ KSD-T0A078-000 1 2N4401 Electrical Characteristics Characteristic , BVCBO IC=100μA, IE=0 60 - - V Collector-Emitter breakdown voltage BVCEO IC


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PDF 2N4401 2N4403 150ts KSD-T0A078-000
Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 2N4401 NPN switching transistor Product specification , collector base emitter DESCRIPTION 2N4401 DESCRIPTION NPN switching transistor in a TO-92; SOT54 , iconductors Product specification NPN switching transistor 2N4401 V BB V CC V0 (p ro b e , NOTES 2N4401 1999 A pr 23 7 Philips Semiconductors - a worldwide company A rg en tina: see , Semiconductors Product specification NPN switching transistor FEATURES · High current (max. 600 mA) · Low


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PDF 2N4401 2N4401 2N4403. 115002/00/03/pp8
2001 - Y3 SOT23

Abstract: SOT23 MARK Y3 TRANSISTOR 2N 4401 2n4401 2n4401 cross W3 marking SOT-223
Text: datasheet is printed for reference information only. Rev. G Product Folder - Fairchild P/N 2N4401 - , Models Product Folder - Fairchild P/N 2N4401 - NPN General Purpose Amplifier Package & leads , 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 E SOT-23 Mark: 2X B NPN , Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25 , °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4401 625 5.0 83.3 200


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PDF 2N4401 MMBT4401 2N4401 OT-23 2N4401RM 2N4401RA O-92-3 AN-9006: Y3 SOT23 SOT23 MARK Y3 TRANSISTOR 2N 4401 2n4401 cross W3 marking SOT-223
Not Available

Abstract: No abstract text available
Text: 2N4401 NPN Silicon Transistor Descriptions PIN Connection • General purpose applicat , Adc VCC= 30Vdc,I C= 150m Adc, I B1 = I B2 = 15m Adc KSD-T0A078-000 2 2N4401 Fig. 1 PC - Ta , h 2N4403 E TO-92 Ordering Information Type NO. Marking Package Code 2N4401 2N4401 TO- 92 Absolute maximum ratings Characteristic Ta=25°C Symbol Ratings Unit , ) Collect or dissipat ion PC 500 mW Junct ion t em perat ure Tj 150 °C Tst g -


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PDF 2N4401 2N4403 KSD-T0A078-000
2005 - 2n4401 rohm

Abstract: No abstract text available
Text: SST4401 / MMST4401 / 2N4401 Transistors NPN Medium Power Transistor (Switching) SST4401 / MMST4401 / 2N4401 zFeatures 1) BVCEO>40V (IC=1mA) 2) Complements the SST4403 / MMST4403 / PN4403 , 3000 2N4401 TO-92 - T93 3000 (1) (3) All terminals have the same dimensions +0.1 ROHM : SST3 , 2.3 0.4 +0.1 -0.05 4.8±0.2 0.15 -0.06 (1) Emitter (2) Base (3) Collector 2N4401 4.8±0.2 3.7±0.2 Collector power dissipation SST4401 MMST4401 SST4401 MMST4401 2N4401 (12.7Min


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PDF SST4401 MMST4401 2N4401 SST4403 MMST4403 PN4403. SST4401 2n4401 rohm
2001 - Not Available

Abstract: No abstract text available
Text: 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 E SOT-23 Mark: 2X B NPN , Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25 , °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4401 625 5.0 83.3 200 , 0.06." 2001 Fairchild Semiconductor Corporatio 2N4401 /MMBT4401, Rev A 2N4401 / MMBT4401 , Voltage 0.75 SMALL SIGNAL CHARACTERISTICS fT Ccb Ceb hie hre hfe hoe Current Gain - Bandwidth


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PDF 2N4401 MMBT4401 2N4401 OT-23 150or
2001 - 2n4401 331

Abstract: SOT-23 2N4401 2n4401 052 mark 2x sot 2N4401 CBVK741B019 F63TNR MMBT4401 PN2222N 2N4401 NPN Switching Transistor
Text: 0 5 h ie 10 15 20 25 30 VCE - COLLECTOR VOLTAGE (V) 35 100 2N4401 / MMBT4401 , 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 SOT-23 E B Mark: 2X , Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - , Thermal Resistance, Junction to Ambient Max Units 2N4401 625 5.0 83.3 *MMBT4401 350 2.8 , Fairchild Semiconductor Corporation 2N4401 /MMBT4401, Rev A (continued) Electrical Characteristics


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PDF 2N4401 MMBT4401 2N4401 OT-23 2n4401 331 SOT-23 2N4401 2n4401 052 mark 2x sot CBVK741B019 F63TNR MMBT4401 PN2222N 2N4401 NPN Switching Transistor
2001 - SOT-23 2N4401

Abstract: 2N4401 transistor 2n4401 331 MMBT4401 TO-92 2N4401 CBVK741B019 F63TNR MMBT4401 PN2222N
Text: 0 5 h ie 10 15 20 25 30 VCE - COLLECTOR VOLTAGE (V) 35 100 2N4401 / MMBT4401 , 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 SOT-23 E B Mark: 2X , Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - , Thermal Resistance, Junction to Ambient Max Units 2N4401 625 5.0 83.3 *MMBT4401 350 2.8 , Fairchild Semiconductor Corporation 2N4401 /MMBT4401, Rev A (continued) Electrical Characteristics


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PDF 2N4401 MMBT4401 2N4401 OT-23 SOT-23 2N4401 2N4401 transistor 2n4401 331 MMBT4401 TO-92 CBVK741B019 F63TNR MMBT4401 PN2222N
1999 - PN4403

Abstract: 2N4401 transistor 2N4401 MMST4401 MMST4403 SST4401 SST4403 T106 UMT4401 UMT4403
Text: UMT4401 / SST4401 / MMST4401 / 2N4401 Transistors NPN Medium Power Transistor (Switching) UMT4401 / SST4401 / MMST4401 / 2N4401 !External dimensions (Units : mm) UMT4401 2.0±0.2 0.65 0.65 SST4401 MMST4401 2N4401 Packaging type UMT3 R2X T106 SST3 R2X T116 SMT3 R2X T146 TO-92 T93 3000 MMST4401 2.9±0.2 V V V A 2N4401 0.625 150 Tstg All , (3) ROHM : SMT3 EIAJ : SC-59 0.2 PC 2N4401 Junction temperature 1.6+0.2 -0.1


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PDF UMT4401 SST4401 MMST4401 2N4401 UMT4401 SST4401 PN4403 2N4401 transistor 2N4401 MMST4403 SST4403 T106 UMT4403
1996 - transistor mps6530 equivalent

Abstract: transistor 2n4401 equivalent transistor 2n4400 equivalent 2N4400 2N4401 MPS6530 2n4401 motorola charge 2n4401 2n4401 equivalent transistor
Text: Transistor MPS6530 NPN Silicon COLLECTOR 3 2 BASE 1 2 1 EMITTER 3 CASE 29­04, STYLE 1 , both the 2N4400 and 2N4401 lines, and the This group of graphs illustrates the relationship between , 50 k hie , INPUT IMPEDANCE (OHMS) hfe , CURRENT GAIN 200 100 70 2N4401 UNIT 1 2N4401 , 20 k 10 k 5.0 k 2.0 k 1.0 k 500 5.0 7.0 10 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 , , VOLTAGE FEEDBACK RATIO (X 10 ­4 ) 10 7.0 5.0 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400


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PDF MPS6530/D MPS6530 226AA) MPS6530/D* transistor mps6530 equivalent transistor 2n4401 equivalent transistor 2n4400 equivalent 2N4400 2N4401 MPS6530 2n4401 motorola charge 2n4401 2n4401 equivalent transistor
2002 - transistor 2N3563

Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
Text: PN3638A PN3640 PN3640 PN3642 PN3642 2N4401 PN3644 PN3645 PN2369 2N3663 TN2907A PN2907A PN2907A TN2219A , 2N4209 2N4220 2N4220 2N4221 2N4222 2N4223 Recommended Fairchild Device PN4091 2N4400 2N4400 2N4401 2N4401 , 2N4400 2N4401 2N4402 2N4403 2N4404 2N4405 2N4406 2N4407 2N4410 2N4416 2N4416 2N4418 2N4419 2N4420 , 2N5460 PN4391 PN4392 PN4393 2N4400 2N4401 2N4402 2N4403 TN4033A TN4033A TN4033A TN4033A 2N4410 PN4416 , 2N4400 2N4401 2N4402 2N4403 (continued) Industry Part Number 2N5018 2N5019 2N5026A 2N5030 2N5055


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1997 - Not Available

Abstract: No abstract text available
Text: 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 SOT-23 E B Mark: 2X , Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 1.0 A TJ, Tstg Operating , Corporation Max Units 2N4401 625 5.0 83.3 *MMBT4401 350 2.8 200 357 mW mW/°C °C , Current VCE = 35 V, VEB = 0.4 V 0.1 2N4401 / MMBT4401 NPN General Purpose Amplifier µA , 0.75 300 0.4 0.75 0.95 1.2 V V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain -


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PDF 2N4401 MMBT4401 2N4401 OT-23 PN2222A
2001 - 2n4401 motorola

Abstract: transistor 2n4401 equivalent 2N4401 surface mount
Text: 2N4401 * *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating , 2N4400 2N4401 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic , mAdc, VCE = 1.0 Vdc) hFE 2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401 VCE(sat) VBE , Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N4400 2N4401 hoe 2N4400 2N4401 hre hfe 20 40 1.0 250 500 30 µmhos fT 2N4400 2N4401 Ccb Ceb hie 0.5 1.0 0.1 7.5 15 8.0 X 10­4 - 200 250 - - - - 6.5 30


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PDF 2N4400 2N4401* 226AA) 2n4401 motorola transistor 2n4401 equivalent 2N4401 surface mount
A2 zener diode

Abstract: diode ZENER A1 to-226aa to226aa ZENER DIODE 1n5240 DIODE 827 ZENER 1N5242 1N414* zener 2n2222 transistor pin b c e ZENER 1n5232
Text: 8-30 8-30 8-5 8-4 8-30 8-30 8-11 8-10 8-30 8-4 8-4 8-4 8-5 8-30 8-10 8-11 8-30 Quad Transistor Array Dual Complementary Pair E C B E B C Quad Transistor Array Dual Complementary Pair B E E E E B E B E C B C Quad Transistor Array C C B B 2N3416 2N3417 2N3904 NPN NPN NPN B C E C Quad Transistor Array B C E C Quad Transistor Array DISCRETE S MXDEX A \ D C s. TM ,;u . I Ì Industry Number 2N4401 2 N4403 2N5087 2N5088 2N5089 2N5308 2N5401 Type NPN PNP PNP NPN NPN NPN PNP Allegro


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PDF 1N914 1N4148 1N5230 1N5231 1N5232 1N5234 1N5236 1N5237 1N5239 1N5240 A2 zener diode diode ZENER A1 to-226aa to226aa ZENER DIODE 1n5240 DIODE 827 ZENER 1N5242 1N414* zener 2n2222 transistor pin b c e ZENER 1n5232
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