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2N4351 Calogic Inc Future Electronics - $4.24 $3.39
2N4351 Motorola Semiconductor Products Bristol Electronics 166 $6.27 $2.72
2N4351 Calogic Inc Karl Kruse GmbH & Co KG 500 $2.00 $2.00
2N4351-TO-72 Linear Integrated Systems NAC 500 $3.80 $3.80

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2N4351 datasheet (20)

Part Manufacturer Description Type PDF
2N4351 Calogic N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch Original PDF
2N4351 Linear Integrated Systems N-channel Mosfet Enhancement Mode Original PDF
2N4351 On Semiconductor TRANS MOSFET N-CH 25V 30A 3TO-18 Original PDF
2N4351 Digitron MOS FET SWITCHING Scan PDF
2N4351 General Instrument Short Form Data 1976 Scan PDF
2N4351 Intersil N-channel enhancement mode MOSFET general purpose amplifier/switch. Scan PDF
2N4351 Intersil Shortform Data Book 1983/4 Scan PDF
2N4351 Intersil Data Book 1981 Scan PDF
2N4351 Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N4351 Motorola The European Selection Data Book 1976 Scan PDF
2N4351 Motorola European Master Selection Guide 1986 Scan PDF
2N4351 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N4351 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N4351 Others Semiconductor Master Cross Reference Guide Scan PDF
2N4351 Others Basic Transistor and Cross Reference Specification Scan PDF
2N4351 Others Shortform Transistor PDF Datasheet Scan PDF
2N4351 Others Shortform Transistor PDF Datasheet Scan PDF
2N4351 Others Shortform Datasheet & Cross References Data Scan PDF
2N4351/D Others Shortform Datasheet & Cross References Data Scan PDF
2N4351/W Others Shortform Datasheet & Cross References Data Scan PDF

2N4351 Datasheets Context Search

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2011 - mosfet 2n4351

Abstract: 2N4351
Text: 2N4351 N-CHANNEL MOSFET The 2N4351 is an enhancement mode N-Channel Mosfet The 2N4351 is an , Packaging Information). FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT HIGH GAIN , Temperatures Storage Temperature Operating Junction Temperature 2N4351 Features: Maximum Power Dissipation , Source Peak Gate to Source (Note 2) 2N4351 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted , SWITCHING TEST CIRCUIT Click To Buy Available Packages: 2N4351 in TO-72 2N4351 in bare die. TO


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PDF 2N4351 2N4351 100mA mosfet 2n4351
2010 - 2N4351

Abstract: mosfet 2n4351 2N435
Text: 2N4351 25 V - N-Channel Enhancement Mode MOSFET General Purpos. http://store.americanmicrosemiconductor.com/ 2n4351.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N4351 2N4351 25 V N- C hannel Enhanc em ent M o de M O SFET G eneral Purpo s , ://store.americanmicrosemiconductor.com/ 2n4351.html U.S Orders Your Americanmicrosemi.com Order Secure Order Processing U.S. Payment , : Americanmicrosemi 2N4351 $ 12.28 $ 9.82 $ 2.46 Total Price $ 9.82 Company Testimonials Store Policies


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PDF 2N4351 com/2n4351 2N4351 mosfet 2n4351 2N435
2N4351

Abstract: wafer dice
Text: Voltage Vggg Transient Gate to Source Voltage 2N4351 N-Channel Enhancement Mode MOS FET ' D(on) Drain , ORDERING INFORMATION TO-72 WAFER DICE 2N4351 2N4351 /W 2N4351 /D ELECTRICAL CHARACTERISTICS (Ta = :25Â


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PDF 2N4351 2N4351 wafer dice
2N4351

Abstract: No abstract text available
Text: Washington University EE-DRS© Document Retrival System 2N4351 Page 1 Washington University EE-DRS© Document Retrival System 2N4351 Page 2 Washington University EE-DRS© Document Retrival System 2N4351 Page 3 Washington University EE-DRS© Document Retrival System 2N4351 Page 4 Motorola


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PDF 2N4351
2012 - mosfet 2n4351

Abstract: No abstract text available
Text: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 20mA HIGH GAIN gfs = 1000µS ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) 1 Maximum Temperatures Storage Temperature -55 to +150 °C Operating Junction , €¢ Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201154 9/26/12 Rev#A3 ECN# 2N4351 SYMBOL , 490-9160 • Fax: 510 353-0261 Doc 201154 9/26/12 Rev#A3 ECN# 2N4351 Linear Integrated Systems


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PDF 2N4351 350mW 25-year-old, mosfet 2n4351
2N4351 equivalent

Abstract: 2N4351 mosfet equivalent mosfet 2n4351 Digitron 2N4351 complementary BO42
Text: Junction Temperature Range Tj 175 x Storage Temperature Range Tsta -65 to +175 ■c 2N4351 TO-72 MOS , BOUND BnOOK, NEW JEHSEY 0B805 isa DGE r-sS'^s' 2N4351 figure 4 — "on" drain source voltage 20 II , JERSEY 08805 2N4351 FIGURE 1 _ FORWARD TRANSFER ADMITTANCE ip, drain curreni intai FIGURE 2 â , BOUND BROOK, NEW JERSEY 08805 2N4351 FIGURE S — SWITCHING CIRCUIT and WAVEFORMS in ofitpuI losAMnmr


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PDF 2fl42L 2N4351 Cdfsubl10 2N4351 equivalent 2N4351 mosfet equivalent mosfet 2n4351 Digitron 2N4351 complementary BO42
2N4351 MOTOROLA

Abstract: mosfet equivalent mosfet 2n4351 2N4351
Text: M O T O RO LA SC XSTRS/R F 1HE D | b3b?a51 GOflkbSS 4 | 2N4351 CASE 20-03, STYLE 2 TO-72 (TO-206AF) MAXIMUM RATINGS Rating Drain-Source Voltage Draln-Gate Voltage Gate-Source Voltage* Drain , F 12E 0 § fc,3b75S4 ÜOäbkab b | 2N4351 T - 3 S aSS 0.1 0.2 0.5 1.0 2.0 5.0 , I 2N4351 FIGURE 4 - " ON" DRAIN-SOURCE VOLTAGE T - S 5 -J5 : VK , DRAIN-SOURCE VOLTAGE , E o 2N4351 | ta t? as M o oatbaa t I FIGURE 9 » SWITCHING CIRCUIT and WAVEFORMS


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PDF 2N4351 O-206AF) 2N4351 MOTOROLA mosfet equivalent mosfet 2n4351 2N4351
2004 - Not Available

Abstract: No abstract text available
Text: Submit ¡ ¡ 2N4351 Availability Buy 2N4351 at our online store ! 2N4351 Information Cate gory » Transistors Class » MOSFETs and TempFETs Type » MOSFETs; N -Ch; Enhancement 2N4351


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PDF 2N4351
2010 - 2N4351 MOTOROLA

Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola 3SK76 BC547 MOTOROLA
Text: 2N4351 3N170 3N176 2N4351 3N170 3Nl77 2N4351 3N171 3N178 3N158 3N172 3N179 3N158 3N172 3Nl80 3N158 3N172


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PDF 2SK355 IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 2N4351 MOTOROLA MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola 3SK76 BC547 MOTOROLA
2N4351

Abstract: mosfet 2n4351 X2N4351
Text: N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch LLC 2N4351 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) · Low ON Resistance · Low Capacitance Gain · High Gate Breakdown Voltage · High · Low Threshold Voltage Drain-Source Voltage or Drain-Body Voltage . . . . . . . . . . 25V Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . . , 2N4351 X2N4351 C D Package Temperature Range Hermetic TO-72 Sorted Chips in Carriers


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PDF 2N4351 100mA -65oC 200oC -55oC 150oC 10sec) 300oC 300ms. DS002 2N4351 mosfet 2n4351 X2N4351
mosfet 2n4351

Abstract: No abstract text available
Text: N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 2N4351 FEATURES · · · · · Low ON Resistance Low Capacitance High Gain High Gate Breakdown Voltage Low Threshold Voltage ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Drain-Source Voltage or Drain-Body Voltage . 25V Peak Gate-Source Voltage (Note 1) . ±125V Drain C u rre n t , extended periods may affect device reliability. ORDERING INFORMATION Part 2N4351 X2N4351 Package


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PDF 2N4351 100mA 10jiA 300ms. mosfet 2n4351
2n4351

Abstract: No abstract text available
Text: N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 2N4351 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) FEATURES • • • • • Low ON Resistance Low Capacitance High Gain High Gate Breakdown Voltage Low Threshold Voltage Drain-Source Voltage or Drain-Body Voltage . 25V Peak Gate-Source Voltage (Note 1 , reliability. ORDERING INFORMATION Part Package 2N4351 X2N4351 Hermetic TO-72 Sorted Chips in


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PDF 2N4351 100mA 300ms. 2n4351
1997 - 2N4351

Abstract: mosfet 2n4351 X2N4351
Text: N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch CORPORATION 2N4351 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) · Low ON Resistance · Low Capacitance Gain · High Gate Breakdown Voltage · High · Low Threshold Voltage Drain-Source Voltage or Drain-Body Voltage . . . . . . . . . . 25V Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . . , 2N4351 X2N4351 C D Package Temperature Range Hermetic TO-72 Sorted Chips in Carriers


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PDF 2N4351 100mA -65oC 200oC -55oC 150oC 10sec) 300oC 300ms. 2N4351 mosfet 2n4351 X2N4351
2n4351

Abstract: mosfet 2n4351
Text: SOLID STATE 3875081 G E SOLID STATE 01 DE I 3fl?SDfll 01E 10977 T- 35*- D010T77 D 2. r * 2N4351 N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch FEATURES · · · · · Lorç ON Resistance Low Capacitance High Gain High Gate Breakdown Voltage Low Threshold Voltage ABSOLUTE MAXIMUM RATINGS (Ta = 25"C unless otherwise noted) Drain-Source Voltage or Drain-Body V o lta g e , reliability. PIN CONFIGURATION ORDERING INFORMATION TO-72 2N4351 ELECTRICAL CHARACTERISTICS Symbol


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PDF D010T77 2N4351 100mA 10sec) 300ms. 2n4351 mosfet 2n4351
2N4351

Abstract: No abstract text available
Text: G E SOLID STATE 3875081 G E SOLID STATE 2N4351 N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch Ol ]>E|3fl7SDfll D01CH77 7 01E 10977 D T- 3S*- 2- r FEATURES • LOW; ON Resistance • Low Capacitance • High Gain • High Gate Breakdown Voltage • Low Threshold Voltage PIN CONFIGURATION TO-72 1003 0218-1 ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted , . ORDERING INFORMATION TO-72 2N4351 ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise specified


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PDF 2N4351 D01CH77 100mA 10sec) 300ms. 2N4351
Not Available

Abstract: No abstract text available
Text: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE s FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN TO-72 BOTTOM VIEW gfs = 1000µS 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) G 2 3 D S 1 4 C Maximum Temperatures Storage Temperature -65 to +200 °C Operating Junction Temperature -55 to +150 °C Maximum Power Dissipation Continuous Power Dissipation 375mW Maximum Current Drain to Source


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PDF 2N4351 100mA 375mW 300ms.
2003 - 2N4351

Abstract: mosfet 2n4351
Text: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN TO-72 BOTTOM VIEW gfs = 1000µS 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) G Storage Temperature -55 to +150 °C 3 D 1 4 C -65 to +200 °C Operating Junction Temperature 2 S Maximum Temperatures Maximum Power Dissipation Continuous Power Dissipation 375mW Maximum


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PDF 2N4351 100mA 375mW 300ms. 2N4351 mosfet 2n4351
2001 - M116 CALOGIC

Abstract: No abstract text available
Text: Calogic, LLC 237 Whitney Place Fremont, CA 94539 Tel: 510-656-2900 Fax: 510-651-1076 M OSFET'S lgss V gs( t h ) r ds( on ) cr ss P/ N ( pA( m a x ) ) ( V( m ax) ( oh m ( m a x ) ) ( pf( m a x ) ) 3N163 - 10 -5 250 .7 3N164 - 10 -5 300 .7 3N165 - 10 -5 300 .7 3N166 - 10 -5 300 .7 3N170 + / - 10 2 200 1.3 3N171 + / - 10 3 200 1.3 3N172 - 200 -5 250 1.0 3N173 - 500 -5 350 1.0 3N190 - 10 -5 300 1.0 3N191 - 10 -5 300 1.0 2N4351 - 10 5 300 1.3 2N4352 -


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PDF 3N163 3N164 3N165 3N166 3N170 3N171 3N172 3N173 3N190 3N191 M116 CALOGIC
VCR3P

Abstract: IT1750 IT1700 3N173 3N172 3N171 3N170 3N164 3N163 3N161
Text: signals. 2N4351 TO-72 1.0 5.0 25 10 nA 10.0 1000.0 300 3 - 3N170 TO-72 1.0 2.0 25 10 nA 10.0


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PDF 3N161 3N163 3N164 3N172 3N173 IT1700 3N171 IT1750 ID-100 ID-101 VCR3P 3N170
2N4351 MOTOROLA

Abstract: 3N170 3c169 DFM12 3N169
Text: MOTOROLA SC { D I O D E S / O P T O } 34 DE|b3b755S CID3ÛD41 5 636 72 55 M O T O RO LA SC (DIODES/OPTO) FIËLD-EFFECT TRANSISTORS DICE (continued) 3^ c 38041 T - JJT- Z - i D DIE NO. LINE SOURCE - DFM122 This die provides performance equal to or better than that of the following device types: 2N4351 3N169 3N170 3N171 MMCS0122 3C169 N-Channel MOSFET designed for low-power switching applications. METALLIZATION - Top


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PDF b3b755S DFM122 2N4351 3N169 3N170 3N171 MMCS0122 3C169 2N4351 MOTOROLA 3c169 DFM12
IT1701

Abstract: 2N4351 3N172 3N170 3N171 3N164 IT1750 M116 M117 TO-72
Text: HARRIS SEMICOND SECTOR S7E D PAS a swim Switching/Amplifier Transistors MOSFETs — N-Channel 43G2E71 0015701 0 BBHAS twj^J.^y^^qwjtM - •"' ftiiiftiiM T~Ot*~0 T-Z-7-Z5 vgs(th) bvdss 'dss •gss 91s rds(on) 'd(on) •ckon) PART v v PA PA /(mho 0 mA mA NUMBER PACKAGE Min Max Min Max Max Min Max Min Max COMMENTS 2N4351 TO-72 1.0 5.0 25 10nA 10 1000 300 3 High Input Z 3N170 TO-72 1.0 2.0 25 10nA 10 1000 200 10 High Input Z 3N171 TO-72 1.5 3.0 25 10nA 10 1000 200 10 High


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PDF 43G2E71 2N4351 3N170 3N171 IT1750 3N164 3N172 3N173 -10nA IT1700 IT1701 M116 M117 TO-72
2011 - bare Die mosfet

Abstract: No abstract text available
Text: LS4351 N-CHANNEL MOSFET The LS4351 is an enhancement mode N-Channel Mosfet The LS4351 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications. (See Packaging Information). FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT HIGH GAIN ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) ID = 100mA gfS = 1000µS Maximum


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PDF LS4351 2N4351 100mA bare Die mosfet
2N4351

Abstract: X2N4351
Text: periods may affect device reliability. ORDERING INFORMATION Part Package Temperature Range 2N4351


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PDF 100mA 10sec) 375mW 300ms. 16M4322 2N4351 X2N4351
2N4351

Abstract: No abstract text available
Text: * TJ Storage Temperature Range 2N4351 Tstq 'Transient potentials of ±75 Volt will not cause


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PDF -t-175 2N4351 I27BSC 0050BSC 2N4351
2N4351 MOTOROLA

Abstract: 3N169 3N171 2N4351 3N170
Text: -72 (TO-2Û6AF) 1 Drain MOSFETs SWITCHING N-CHANNEL — ENHANCEMENT Refer to 2N4351 for graphs. ELECTRICAL


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PDF 3N169 3N171 2N4351 t3b725Â 2N4351 MOTOROLA 3N170
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