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Part Manufacturer Description Datasheet Download Buy Part
JANTXV2N4150 Microsemi Corporation Small Signal Bipolar Transistor, 10A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN
JANS2N4150 Microsemi Corporation Small Signal Bipolar Transistor, 10A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN
JANTXV2N4150S Microsemi Corporation Small Signal Bipolar Transistor, 10A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN
JANTX2N4150S Microsemi Corporation Small Signal Bipolar Transistor, 10A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN
JANTX2N4150 Microsemi Corporation Small Signal Bipolar Transistor, 10A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN
JAN2N4150 Microsemi Corporation Small Signal Bipolar Transistor, 10A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN
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2N4150 Sarantel Richardson RFPD - $8.35 $7.93
2N4150 . Bristol Electronics 23 $12.00 $7.50
2N4150 Solid State Manufacturing Allied Electronics & Automation - $7.55 $6.90
2N4150JANTX Cobham Semiconductor Solutions Avnet 1,907 - -
2N4150JANTX Cobham Semiconductor Solutions Avnet 264 - -
2N4150JANTXV Cobham Semiconductor Solutions Avnet - - -
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J2N4150 Microsemi Corporation Bristol Electronics 399 - -
JAN2N4150 Microsemi Corporation Bristol Electronics 51 - -
JAN2N4150 Cobham Semiconductor Solutions Avnet - - -
JAN2N4150S Cobham Semiconductor Solutions Avnet - - -
JAN2N4150S Cobham Semiconductor Solutions Avnet - - -
JANTX2N4150 Microsemi Corporation Future Electronics - $12.40 $9.92
JANTX2N4150 Microsemi Corporation Bristol Electronics 557 $9.75 $5.61
JANTX2N4150 Semicoa Semiconductors Chip1Stop 18 $54.10 $52.64
JANTX2N4150 Microsemi Corporation Chip1Stop 35 $17.50 $11.10
JANTX2N4150 Cobham PLC Chip1Stop 8 $37.39 $37.39
JANTX2N4150S Microsemi Corporation Future Electronics - $11.78 $9.42
JANTXV2N4150 MSC - STC New Advantage Corporation 206 - -

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2N4150 datasheet (68)

Part Manufacturer Description Type PDF
2N4150 Microsemi NPN Power Silicon Transistor Original PDF
2N4150 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=5 / Hfe=40-120 / fT(Hz)=15M / Pwr(W)=5 Original PDF
2N4150 Semico Chip: geometry 9201 polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=5 / Hfe=40-120 / fT(Hz)=15M / Pwr(W)=5 Original PDF
2N4150 Semico Type 2N4150 Geometry 9201 Polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=5 / Hfe=40-120 / fT(Hz)=15M / Pwr(W)=5 Original PDF
2N4150 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
2N4150 API Electronics COLLECTOR CURRENT = 10 AMPS NPN TYPES Scan PDF
2N4150 API Electronics Short form transistor data Scan PDF
2N4150 API Electronics Short form transistor data Scan PDF
2N4150 Crimson Semiconductor Transistor Selection Guide Scan PDF
2N4150 Diode Transistor NPN Transistor Selection Guide Scan PDF
2N4150 Diode Transistor Transistor Short Form Data Scan PDF
2N4150 General Transistor Power Transistor Selection Guide Scan PDF
2N4150 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2N4150 Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N4150 Others Basic Transistor and Cross Reference Specification Scan PDF
2N4150 Others Transistor Shortform Datasheet & Cross References Scan PDF
2N4150 Others Shortform Transistor PDF Datasheet Scan PDF
2N4150 Others Shortform Transistor PDF Datasheet Scan PDF
2N4150 Others Catalog Scans - Shortform Datasheet Scan PDF
2N4150 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF

2N4150 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - 2N4150

Abstract: No abstract text available
Text: Back to Bipolar Power Transistors TECHNICAL DATA 2N4150 , 2N4150S JAN, JTX, JTXV 2N5237 , Junction-to-Ambient 1) 2) Symbol VCEO VCBO VEBO IC PT TJ, Tstg 2N4150 2N4150S 70 100 2N4150 2N4150S 120 150 10 10 1.0 5.0 -65 to +200 Max. 0.020 2N4150 2N4150S 170 200 Unit Vdc Vdc Vdc Adc W 0 , Voltage IE = 10 µAdc Collector-Emitter Breakdown Voltage IC = 0.1 Adc V(BR)EBO 2N4150 , 2N4150S 2N5237 , Cutoff Current VCB = 80 Vdc 2N4150 , 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S 2N4150 , 2N4150S 2N5237


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PDF 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S MIL-PRF-19500/394 1000C 2N4150 2N4150S
2008 - 2N4150

Abstract: 110VDC 2N4150S 2N5237 2N5237S 2N5238 2N5238S 70VDC
Text: MIL-PRF-19500/394 DEVICES LEVELS 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S JAN , VBE = 0.5Vdc, VCE = 60Vdc VBE = 0.5Vdc, VCE = 110Vdc VBE = 0.5Vdc, VCE = 160Vdc 2N4150 , 2N4150S , VCE = 160Vdc 2N4150 , 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S ICEO 10 10 10 µAdc , Voltage IC = 5.0Adc, IB = 0.5Adc IC = 10Adc, IB = 1.0Adc Symbol 2N4150 , 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S All Types 2N4150 , 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S All Types All Types


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PDF MIL-PRF-19500/394 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S 2N4150 110VDC 2N4150S 2N5237 2N5237S 2N5238 2N5238S 70VDC
2002 - 2N4150

Abstract: 1000C 2N4150S 2N5237 2N5237S 2N5238 2N5238S
Text: Level 2N4150 2N4150S 2N5237 2N5237S JAN JANTX JANTXV 2N5238 2N5238S MAXIMUM RATINGS , , 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S V(BR)CEO 70 120 170 Vdc 2N4150 , 2N4150S 2N5237 , Adc, VCE = 5.0 Vdc Symbol 2N4150 , 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S All Types 2N4150 , Vdc, f = 1.0 kHz 2N4150 , 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S Output Capacitance VCB = 10 Vdc , Max. Unit ICEO 10 10 10 µAdc IEBO 2N4150 , 2N4150S 2N5237, 2N5237S 2N5238


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PDF MIL-PRF-19500/394 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S 1000C 2N4150 2N5237 2N4150S 2N5237S 2N5238 2N5238S
1999 - 2N4150

Abstract: No abstract text available
Text: Data Sheet No. 2N4150 Generic Part Number: 2N4150 Type 2N4150 Geometry 9201 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/394 Features: · · · · Power switching transistor for high speed switching applicatons. Housed in a TO-5 case. Also available in chip form using the 9201 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/394 which Semicoa meets , PT PT C C Data Sheet No. 2N4150 Electrical Characteristics o TC = 25 C unless


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PDF 2N4150 MIL-PRF-19500/394 MIL-PRF-19500/394 MIL-PRF-19500/394C 2N4150
1999 - 2N5237

Abstract: 2n52 1000C 2N4150 2N4150S 2N5237S 2N5238 2N5238S
Text: TECHNICAL DATA 2N4150 , 2N4150S JAN, JTX, JTXV 2N5237, 2N5237S JAN, JTX, JTXV 2N5238, 2N5238S , Temperature Range Symbol 2N4150 2N4150S 2N4150 2N4150S 2N4150 2N4150S Unit VCEO VCBO , Breakdown Voltage IC = 0.1 Adc 2N4150 , 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S 2N4150 , 2N4150S , / Fax: (978) 689-0803 3/98 REV: C Page 1 of 2 2N4150 , 2N4150S , 2N5237, 2N5237S, 2N5238, 2N5238S , = 80 Vdc 2N4150 , 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S ICEX 10 10 10 µAdc


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PDF 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S MIL-PRF-19500/394 1000C 2N4150 2N4150S 2N5237 2n52 1000C 2N4150 2N5238
2n5237

Abstract: No abstract text available
Text: MIL-PRF-19500/394 DEVICES LEVELS 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S JAN , VBE = 0.5Vdc, VCE = 60Vdc VBE = 0.5Vdc, VCE = 110Vdc VBE = 0.5Vdc, VCE = 160Vdc 2N4150 , 2N4150S , VCE = 160Vdc 2N4150 , 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S ICEO 10 10 10 µAdc , Voltage IC = 5.0Adc, IB = 0.5Adc IC = 10Adc, IB = 1.0Adc Symbol 2N4150 , 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S All Types 2N4150 , 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S All Types All Types


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PDF MIL-PRF-19500/394 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S 2n5237
2011 - 2n4150

Abstract: No abstract text available
Text: NPN Power Silicon Transistor 2N4150 , 2N5237 & 2N5238 Features · · Available in JAN, JANTX, and , ) @ TA = +25 °C (2) Symbol VCEO VCBO VEBO IC PT Top, Tstg RJC RJA 2N4150 70 100 2N5237 120 150 10.0 , 0.1 mAdc 2N4150 2N5237 2N5238 Collector - Emitter Cutoff Current VBE = 0.5 Vdc, VCE = 60 Vdc VBE = 0.5 , Current VCB = 100 Vdc VCB = 150 Vdc VCB = 200 Vdc VCB = 80 Vdc 2N4150 2N5237 2N5238 All Types 2N4150 2N5237 2N5238 2N4150 2N5237 2N5238 Symbol V(BR)CEO Mimimum 70 120 170 -Maximum -Units Vdc ICEX 10


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PDF 2N4150, 2N5237 2N5238 MIL-PRF-19500/384 2N4150 2N5237
2011 - Not Available

Abstract: No abstract text available
Text: NPN Power Silicon Transistor 2N4150 , 2N5237 & 2N5238 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/384 • TO-5 Package Maximum Ratings Symbol 2N4150 , Collector - Emitter Breakdown Voltage IC = 0.1 mAdc 2N4150 2N5237 2N5238 Mimimum Maximum Units , 60 Vdc VBE = 0.5 Vdc, VCE = 110 Vdc VBE = 0.5 Vdc, VCE = 160 Vdc 2N4150 2N5237 2N5238 ICEX , 160 Vdc 2N4150 2N5237 2N5238 ICEO - 10 10 10 µAdc IEBO - 10 0.1


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PDF 2N4150, 2N5237 2N5238 MIL-PRF-19500/384 2N4150
2N4150

Abstract: 2N4150S 2N5237 2N5237S 2N5238 2N5238S JAN 2N4150 equivalent
Text: , SILICON, POWER SWITCHING, TYPES: 2N4150 , 2N5237, 2N5238, 2N4150S , 2N5237S, AND 2N5238S, JAN, JANTX , visual (design verification) 4/ Subgroup 2 2N4150 , 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S , 2N4150 , 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S 70 120 170 V dc V dc V dc 3061 VEB = 7 , 10 10 10 Emitter to base cutoff current A dc A dc A dc ICEO1 2N4150 , 2N4150S 2N5237 , emitter cutoff current 3041 2N4150 , 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S Bias condition A


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PDF MIL-PRF-19500/394M MIL-PRF-19500/394L 2N4150, 2N5237, 2N5238, 2N4150S, 2N5237S, 2N5238S, 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S JAN 2N4150 equivalent
2011 - Not Available

Abstract: No abstract text available
Text: NPN Power Silicon Transistor 2N4150 Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/394 • TO-5 Package Maximum Ratings Symbol 2N4150 Units Collector - Emitter Voltage Ratings VCEO 70 Vdc Collector - Base , VCB = 80 Vdc ICBO - 10 0.1 Revision Date: 4/22/2014 μAdc 1 2N4150 Electrical , Date: 4/22/2014 2N4150 , 2N5237 & 2N5238 Outline Drawing Note: All dimensions are inches [mm].


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PDF 2N4150 MIL-PRF-19500/394
Stancor C-2691

Abstract: 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S MIL-STD-750 METHOD 1022
Text: SWITCHING TYPES: 2N4150 , 2N5237, 2N5238, 2N4150S , 2N5237S, AND 2N5238S JAN, JANTX, JANTXV, JANS, JANHC AND , 2075 n = 4 device, c = 0 Subgroup 2 Collector to base cutoff current 2N4150 , 2N4150S 2N5237 , 4.5.1) V dc V(BR)CEO 70 120 170 2N4150 , 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S See , = 60 V dc VCE = 110 V dc VCE = 160 V dc 2N4150 , 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S Collector to emitter cutoff current 3041 2N4150 , 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S Bias


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PDF MIL-PRF-19500/394G MIL-PRF-19500/394F 2N4150, 2N5237, 2N5238, 2N4150S, 2N5237S, 2N5238S Stancor C-2691 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S MIL-STD-750 METHOD 1022
Not Available

Abstract: No abstract text available
Text: POWER TRANSISTORS 10 Amp, 70V, Planar NPN JAN, JANTX & JANTXV 2N4150 FEATURES · M e ets , °C M E C H A N IC A L S P E C IF IC A T IO N S JAN , J A N T X & J A N T X V 2N4150 T0-5 INCHES v , 2-26 UNITRODE jan ; JANTX & JANTXV 2N4150 E L E C T R IC A L S P E C IF IC A T IO N S (at , > tn II > < _ > II P R IN T E D IN U .S .A . JAN, JANTX & JANTXV 2N4150 Forward Bias , & JANTXV 2N4150 Sw itching Speed Characteristics Sw itching Speed Characteristics lc - C O


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PDF 2N4150 MIL-S-19500/394
1999 - 2N5339

Abstract: 2N5154 2N4150 2C5154 2N5152L 2N5152 2N4150S 2N3999 2N3998 2n5339 data sheet
Text: Data Sheet No. 2C5154 Generic Packaged Parts: Chip Type 2C5154 Geometry 9201 Polarity NPN 2N4150 , 2N51512, 2N5154, 2N5339 Chip type 2C5154 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for medium power amplifier and switching and wide band amplifier applications. Features: · Medium power ratings 2N3998, 2N3999, 2N4150 , 2N4150S , 2N5152, 2N5152L, 2N5154, 2N5154L, 2N5339 Mechanical Specifications


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PDF 2C5154 2N4150, 2N51512, 2N5154, 2N5339 2C5154 2N3998, 2N3999, 2N5339 2N5154 2N4150 2N5152L 2N5152 2N4150S 2N3999 2N3998 2n5339 data sheet
A23041

Abstract: 2N4150 Unitrode transistors data To5
Text: POWER TRANSISTORS JAN JANT* & JANTXV 2N4150 10 Amp, 70V, Planar NPN FEATURES • Meets MIL-S-19500/394 • Collector-Base Voltage: up to 100V • Peak Collector Current: 10A • Fast Switching â , .029-045 .736-1.14 L .100 2.54 TO-5 72 run UNITRODE JAN, JANTX & JANTXV 2N4150 ELECTRICAL , 95-1064 73 PRINTED IN U.S.A. JAN, JANTX & JANTXV 2N4150 Forward Bias Safe Operating Area 12 5 10 20 , , JANTX & JANTXV 2N4150 Switching Speed Switching Speed Characteristics Characteristics lc â


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PDF 2N4150 MIL-S-19500/394 A23041 2N4150 Unitrode transistors data To5
TRANSISTOR SE 135

Abstract: 11C1 diode p 2N3421
Text: ' f e Typical Device Types: 2N3418 - 2N3421, 2N4150 nnAi u ui ItPfJ 0.1(XT lC B = 1 0 m A ebo General Semiconductor Industries, Inc. | NPN T R A N S IS T O R C H IP "11" DIODE & TRANSISTOR CHIPS 10 AMP Fast Switching Bonding Pad Areas Base (1) 31 x 13.5 mils Emitter (1) 19 x 10 , ITCHING SYMBOL 2N4150 @ CONDITIO NS Units n se c n se c n se c n se c SYMBOL o o 11C-1 Ref. 2N3421 11C-2 Ref. 2N4150 20 5 500 500 Units V A mA mA


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PDF 2N3418 2N3421, 2N4150 11C-1 11C-2 100mA, 200mA 2N3421 TRANSISTOR SE 135 11C1 diode p
2n3920

Abstract: 2n8249
Text: 0043592 A P I A P I ELECTRONICS INC _ 2 6 C 2b D eT | O D ^ S 1 ^ n- - a< ELECTRONICS INC 0000230 T | COLLECTOR CURRENT = 10 AMPS NPN TYPES - CONTINUED Device No 2N3920 2N4070 2N4071 2N4150 JAN 2N4150 JTX * 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008 2N5048 2N5049 2N5083 2N5084 2N5085 2N5152 2N5154 2N5218 2N5237 JAN 2N5237 JT X * 2N5237 2N5238 2N5264 2N5288 2N5289 2N5317 2N5319 2N5327 2N5328 2N5540 2N5542 2N5552 2N5559 2N5622 2N5624 2N5626 2N5628 2N5632 2N5633 2N5634 2N5730 2N5758


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PDF 2N3920 2N4070 2N4071 2N4150 2N4301 2N4347 2N4348 2N5006 2n8249
2N4150

Abstract: NS2N
Text: General ^ ^ Semiconductor ^ ® Industries, Inc. D IFFU SED S ILIC O N PLANAR PA SSIVATED TR A N SISTO R S 2N4150 NPN SILICON HIGH POWER T R A N SIST O R S These devices are designed for use in , re lia bility. JAN /JA N TX 2N4150 transistors to MIL-S-19500/394 are also available. FEATURES · · · , derating factor V ceo V CBO V EBO -6 5 °C to 2 0 0 °C + 200°C + 300°C 5 W atts 50 m W /0C 2N4150 JAN 2N4150 Maxim um Voltages and Current C ollector to Em itter Voltage C ollector to Base Voltage E m


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PDF 2N4150 2N4150 MIL-S-19500/394 NS2N
Not Available

Abstract: No abstract text available
Text: 20 40 50 Device No 2N3920 2N4070 2N4071 2N4150 JAN 2N4150 JT X * 2N4150 2N4301 2N4347 2N4348


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PDF O61/1 O111/1 111/I
2002 - 2N4150

Abstract: 2N4150J 2N4150JV 2N4150JX
Text: 2N4150 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: · General purpose · Low power, High voltage · NPN silicon transistor · Screening and processing per MIL-PRF-19500 Appendix E · JAN level ( 2N4150J ) · JANTX level ( 2N4150JX ) · JANTXV level ( 2N4150JV ) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 method 2072 for , www.SEMICOA.com Page 1 of 2 2N4150 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS


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PDF 2N4150 MIL-PRF-19500 2N4150J) 2N4150JX) 2N4150JV) MIL-STD-750 MIL-PRF-19500/394 2N4150 2N4150J 2N4150JV 2N4150JX
2010 - Not Available

Abstract: No abstract text available
Text: 2N4150 Silicon NPN Transistor Data Sheet Description SEMICOA Corporation offers: · Screening and processing per MIL-PRF-19500 Appendix E · JAN level ( 2N4150J ) · JANTX level ( 2N4150JX ) · JANTXV level ( 2N4150JV ) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV · Radiation testing (total dose) upon request Applications · General purpose · Low , www.SEMICOA.com 2N4150 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics


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PDF 2N4150 MIL-PRF-19500 2N4150J) 2N4150JX) 2N4150JV) MIL-STD-750 MIL-PRF-19500/394
2N3920

Abstract: 2N5048 2N5008 2N5006 2N4348 2N4347 2N4301 2N4150 2N4071 2n8249
Text: -3 200 150 8 40 120 5 5 .6 1. 5 5 .5 1. 5 20 2N4150 TO-5 100 80 5 40 120 5 5 .6 1. 5 5 . 5 25 60 JAN TO-5 100 80 5 40 120 5 5 .6 1. 5 5 . 5 25 60 2N4150 JTX * TO-5 100 80 5 40 120 5 5 .6 1. 5 5 .5 25 60 2N4150 2N4301 TO-61 100 80 8 30 120 4 5 1 1.2 10 1.3 2 40 2N4347 TO


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PDF 2N3920 2N4070 2N4071 2N4150 2N4150 2N4301 2N4347 2N5760 2N5854 2N5048 2N5008 2N5006 2N4348 2n8249
2010 - Not Available

Abstract: No abstract text available
Text: 2N4150 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: · Screening and processing per MIL-PRF-19500 Appendix E · JAN level ( 2N4150J ) · JANTX level ( 2N4150JX ) · JANTXV level ( 2N4150JV ) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV · Radiation testing (total dose) upon request Applications · General purpose · Low , www.SEMICOA.com 2N4150 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics


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PDF 2N4150 MIL-PRF-19500 2N4150J) 2N4150JX) 2N4150JV) MIL-STD-750 MIL-PRF-19500/394
2N3920

Abstract: 2N5008 2N5006 2N4348 2N4347 2N4301 2N4150 2N4071 2N4070 2N5048
Text: ¡¿¡ELECTRONICS, INC. \ - 15 COLLECTOR CURRENT = 10 AMPS NPN TYPES—Continued VCBO vCEO (sus) VEBO hFF ?JC °C/W Fi Device No Case Volts Volts Volts Min Max VCE ic Vce (sat) Vbe (sat) @ ic @ IB MHz 2N3920 TO-3 120 60 6 100 300 2 2 1.2 1.8 10 5 5 1 1.2 1.5 1. 5 80 20 20 60 60 2N4070 2N4071 TO-3 TO-3 120 200 100 150 8 8 40 40 120 120 5 5 5 5 .6 .6 1.5 1.5 .5 . 5 2N4150 TO-5 100 80 5 40 120 5 5 .6 1.5 5 . 5 25 25 JAN 2N41S0 TO-5 100 80 5 40 120 5 5 .6 1.5 5 JTX* 2N4150 TO-5 100 80 5


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PDF 2N3920 2N4070 2N4071 2N4150 2N41S0 2N4301 2N4347 2N4348 2N5006 2N5008 2N5048
TO61 package

Abstract: 2N3920 TO111 package 2N4348 2N4347 2N4301 2N4150 2N4071 2N4070 2N5083
Text: 5ÌMELECTRONICS. INC. \ - 15 COLLECTOR CURRENT = 10 AMPS NPN TYPES—Continued VCBO vCEO (sus) VEBO hFF ?JC °C/W Fi Device No Case Volts Volts Volts Min Max VCE ic Vce (sat) Vbe (sat) @ ic @ IB MHz 2N3920 TO-3 120 60 6 100 300 2 2 1.2 1.8 10 5 5 1 1.2 1.5 1. 5 80 20 20 60 60 2N4070 2N4071 TO-3 TO-3 120 200 100 150 8 8 40 40 120 120 5 5 5 5 .6 .6 1.5 1.5 .5 . 5 2N4150 TO-5 100 80 5 40 120 5 5 .6 1.5 5 . 5 25 25 JAN 2N41S0 TO-5 100 80 5 40 120 5 5 .6 1.5 5 JTX* 2N4150


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PDF 2N3920 2N4070 2N4071 2N4150 2N41S0 2N4301 2N4347 2N4348 2N5006 TO61 package TO111 package 2N5083
Not Available

Abstract: No abstract text available
Text: MICROSEMI CORP/ UATERTOUN SDE 13471b3 GG124ÔS Sfil M U N I T POWER TRANSISTORS JAN, JANTX & JANTXV 2N4150 10 Amp, 70V, Planar NPN F EA T U RES • M eets MIL-S-19500/394 • Collector-Base Voltage: up to 100V • Peak Collector Current: 10A • Fast S w itch in g • Low Saturation Voltage D E S C R IP T IO N U n itrod e p o w e rtra n sistors provide a unique com bination of low , / tilATERTOülN m ^ 3 4 7 ^ 3 001240b 41Ô M U N I T J A « JAN-TX & JANTXV 2N4150 T-33-05 E LECT RIC A


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PDF 13471b3 GG124Ã 2N4150 MIL-S-19500/394
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