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2N4126 Central Semiconductor Corp Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN
2N4126 LEAD FREE Central Semiconductor Corp TRANS PNP 25V TO-92
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2N4126 Motorola Semiconductor Products Bristol Electronics 393 - -
2N4126 Central Semiconductor Corp Avnet - $0.13 $0.11
2N4126 NTE Electronics Inc Newark element14 1,904 $0.18 $0.14
2N4126 Central Semiconductor Corp Future Electronics - $0.15 $0.12
2N4126 Fairchild Semiconductor Corporation Rochester Electronics 170,000 $0.02 $0.02
2N4126 NTE Electronics Inc element14 Asia-Pacific 1,902 $0.50 $0.14
2N4126 Philips Semiconductors Bristol Electronics 1,700 $0.15 $0.04
2N4126 Fairchild Semiconductor Corporation Bristol Electronics 1,000 - -
2N4126 National Semiconductor Corporation Bristol Electronics 320 $0.15 $0.07
2N4126 Unknown Bristol Electronics 100 - -
2N4126 Fairchild Semiconductor Corporation Bristol Electronics 1,800 $0.15 $0.04
2N4126 . Bristol Electronics 3,300 - -
2N4126 NTE Electronics Inc Farnell element14 1,902 £0.16 £0.13
2N4126 D26Z National Semiconductor Corporation Bristol Electronics 8,000 $0.15 $0.03
2N4126 TRE Central Semiconductor Corp Avnet - $0.16 $0.14
2N4126RA Fairchild Semiconductor Corporation Bristol Electronics 1,590 $0.15 $0.04
2N4126TFR Fairchild Semiconductor Corporation Rochester Electronics 20,000 $0.02 $0.02

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2N4126 datasheet (79)

Part Manufacturer Description Type PDF
2N4126 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 25V AMP/SWITCH TO-92 Original PDF
2N4126 Diodes TRANS GP BJT PNP 25V 0.2A 3TO-92 Original PDF
2N4126 Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
2N4126 Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
2N4126 Fairchild Semiconductor Small Signal Transistor Original PDF
2N4126 General Semiconductor Small Signal Transistors (PNP) Original PDF
2N4126 General Semiconductor BJT, PNP, Small Signal Transistor, VCB0 25V, IC 0.2A Original PDF
2N4126 Philips Semiconductors Small-signal Transistors Original PDF
2N4126 Philips Semiconductors PNP general purpose transistor Original PDF
2N4126 Siemens Cross Reference Guide 1998 Original PDF
2N4126 Sinyork Mini size of Discrete semiconductor elements Original PDF
2N4126 Vishay 2N4124 Spice Parameters Original PDF
2N4126 Vishay Siliconix Small Signal Transistor (PNP) Original PDF
2N4126 Vishay Telefunken TRANS GP BJT PNP 25V 0.2A 3TO-92 Original PDF
2N4126 Allegro MicroSystems General Purpose Bipolar Transistor, PNP, 25 MinV, TO-92, 3-Pin Scan PDF
2N4126 Central Semiconductor PNP EPOXY - SWITCHING AND GENERAL PURPOSE / SATURATED SWITCH Scan PDF
2N4126 Central Semiconductor PNP Epoxy - Switchin and General Purpose Transistors / Saturated Switch Scan PDF
2N4126 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
2N4126 Crimson Semiconductor Transistor Selection Guide Scan PDF
2N4126 Diodes Lead Mounted Transistors Scan PDF

2N4126 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N4125

Abstract: 2N4126 2n4125 transistor
Text: 2N4125/4126 AMPLIFIER TRANSISTOR · Collector-Emitter Voltage: V c e o *= 2N4125:3 0 V 2N4126 :25V , Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature :2N4125 2N4126 :2N4125 2N4126 Symbol VcBO VcEO V ebo lc Pc Tj T sto Rating -30 -25 -30 -25 -4 -200 625 150 -55-150 , -25t;) Characteristic Collector-Base Breakdown Voltage :2N4125 2N4126 *Coltector-Emitter Breakdown Voltage 2N4125 2N4126 Emitter-Base Breakdown Voltage Collector Cut-off Current Base Cut-off Current *DC Current Gain 2N4125 2N4126


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PDF 2N4125/4126 2N4125 2N4126 625mW 2N4126 TA-25t; 2n4125 transistor
2N4125

Abstract: 2N4126
Text: VCBO v EBO >C Pd Pd TJ- Tstg 2N4125 -3 0 -3 0 - 4 .0 -200 625 5.0 1.5 12.0 - 55 to - 150 2N4126 -2 5 -2 5 U n it Vdc Vdc Vdc m Adc mW m W 'T W att mWX C 2N4125 2N4126 CASE 29-04, STYLE 1 TO-92 (TO , Voltage (Iq = - 1 .0 m Adc, l£ = 0) 2N4125 2N4126 2N4125 2N4126 v (BR)CEO v (BR)CBO v (BR)EBO 'CBO l EBO , = - 2 .0 m Adc, V c e = - 1 .0 Vdc) hFE 2N4125 2N4126 2N4125 2N4126 v CE{sat) v BE|sat) 50 120 25 , Gain (lc = - 2.0 m Adc, V c e - 1 0 Vdc, f = 1.0 kHz) 2N4125 2N4126 h MHz 200 250 10 4.5 pF PF


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PDF 2N4125 2N4126 2N4126 O-226AA) 2N4125,
2004 - 2n4126

Abstract: No abstract text available
Text: 2N4126 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. = 2N4126 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N4126 at our online store! 2N4126 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N4126 Information Did you Know , for Parts Request a Quote Test Houses 2N4126 Specifications Military/High-Rel : N V(BR)CEO (V


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PDF 2N4126 2N4126 STV3208 LM3909N LM3909
2N4126

Abstract: No abstract text available
Text: 2N4126 PNP S ilico n E p itaxial T ransistor for switching and amplifier applications , at ambient temperature at a distance of 2 mm from case. 72 ITT INTERMETALL 2N4126 C h a , temperature at a distance of 2 mm from case. ITT INTERMETALL 73 2N4126 Adm issible power , K/W 2N4126 0 100 Tam b 200 "C 74 ITT INTERMETALL 2N4126 DC outrent gain versus coHector current Common em itter collector characteristics 2N4126 mA 2N4126 Common


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PDF 2N4126 2N4124 2N4126
2n3904 409

Abstract: 2N4125 2N4400 2N4124 2N4123 2N3906 2N3905 2N3904 2N3903 ges5815
Text: 150 2 KHBH 4 50 ■■■250 2.5 200 350 2N4126 PNP 25 120 360 2 ■■MB .4 50 5 300 2.5 200 350 , , 5mA 2N4125 2N4124 25 1 120-360 2mA 1 0.3 50mA, 5mA 2N4126 2N4125 30 1 50-150 2mA 1 0.4 50mA, 5mA 2N4123 2N4126 25 1 20-360 2mA 1 0.4 50mA, 5mA 2N4124 GES5368 30 60-200 150mA 10 0.3 150mA, 15rrA , (Continued) 107 Silicon Transistors 2N4125 2N4126 The General Electric 2N4125 and 2N4126 are PNP , specified) 2N4125 2N4126 Voltages Collector to Emitter VCEO 30 25 Volts Collector to Base Vcbo 30 25


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PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4I26 2n3904 409 ges5815
2N3906

Abstract: 2N4125 42761 2n3905A zc842t70 MCS-4277B 2N4126 2N4124 2N4123 2N3905
Text: characteristics for 2N4126. 34 G E SOLID STATE Ol DE 13Û7SQÛ1 0017=13]. 3875081 G E SOLID STATE 01E 17931 D , 2N4126. tflui tr* 5S-06I & -0.4 tu J 8 -oa T* = 25'C I -0001 -0 01 -0-1 BASE CURRENT (IB) â , characteristics lor 2N4126. TERMINAL CONNECTIONS Lead 1 - Emitter Lead 2 - Base Lead 3 - Collector 35 , Signal Transistors 2N4123, 2N4124, 2N4125, 2N4126 T -0.1 -1 -10 -100 COLLECTOR CURRENT (lc) - mA , - 2N4123, 2N4124, 2N4125, 2N4126 Silicon Transistors TO-92 The G E/RCA 2N4123, 2N4124 NPN types and


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PDF 2N4123, 2N4124, 2N4125, 2N4126 92CS-42777 2N3905and 2N3906. 2N3905. 2N3905 2N3906 2N4125 42761 2n3905A zc842t70 MCS-4277B 2N4126 2N4124 2N4123
2N4121

Abstract: 2N5219 2N5139 2N4126 2N4122 2N3566 TO-105 2N3566
Text: -105 TO-106 TO-106 PNP Complement 2N5142 2N5143 2N3221 2N5139 2N5226 2N4126 2N4125 2N5227 2N4122 2N4121 2N4121 MPS3702 2N5142 2N5143 MPS6563 MPS6519 2N4126 2N4126 MPS6518 2N4126 2N4126 2N4126 2N4126 2N4126 2N4125 2N4125 2N4125 2N4122 2N4126 2N4121 2N5142 2N4121 2N5226 MPS6562 MPS6517 MPS6516 2N4125 2N3638A


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PDF 2N5128 2N5129 2N5219 2N4121 2N5139 2N4126 2N4122 2N3566 TO-105 2N3566
1996 - 2N4125

Abstract: 2N4126 2N4125 MOTOROLA 2n4125 equivalent DSA006741
Text: Transistors 2N4125 2N4126 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4125 2N4126 CASE 29­04, STYLE 1 TO­92 (TO­226AA) Unit Collector ­ , , IE = 0) V(BR)CEO 2N4125 2N4126 Vdc V(BR)CBO 2N4125 2N4126 Emitter ­ Base Breakdown , 2N4126 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Min Max 2N4125 2N4126 50 120 150 360 2N4125 2N4126 25 60 - - Characteristic Unit


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PDF 2N4125/D 2N4125 2N4126 2N4125 226AA) 2N4125/D* 2N4126 2N4125 MOTOROLA 2n4125 equivalent DSA006741
2N4126

Abstract: 2N41 2N4125 transistor 2N4125 2n4125 transistor Tj150
Text: Voltage: VCeo = 2N41 25: 30V 2N4126 : 25V * Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM , 2N4126 -25 V Collector-Emitter Voltage :2N41 25 VcEO -30 V 2N4126 -25 V Emitter-Base Voltage Ve bo , =-0 :2N41 25 -30 V 2N4126 -25 V •Collector-Emitter Breakdown Voltage BVceo lc=-1mA, lB=0 :2N41 25 -30 V 2N4126 -25 V Emitter-Base Breakdown Voltage BVebo Ie= — 1 0(¿A, lc=0 -4 V , * DC Current Gain hfe :2N41 25 Vce=-1V, ic=-2mA 50 150 2N4126 120 360 2N4125 Vce


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PDF 2N4125/4126 2N4126: 625mW 2N4126 -10mA, 2N4125 2N4126 2N41 2N4125 transistor 2N4125 2n4125 transistor Tj150
2n4125

Abstract: 2n4126
Text: 2N4125 2N4126 2N4125 30 30 4.0 200 625 5.0 1.5 12.0 55 to +150 2N4126 25 25 Unit Vdc Vdc Vdc mAdc mW mW , Collector-Emitter Breakdown Voltage (1) Collector-Base Breakdown Voltage (lc = 1.0 mAdc, lE = 0) 2N4125 2N4126 2N4125 2N4126 V(BR)CEO v (BR)CBO V(BR)EBO 'CBO 'EBO 30 25 30 25 4.0 - | Symbol | Min , ) hFE 2N4125 2N4126 2N4125 2N4126 v CE(sat) v BE(sat) 50 120 25 60 0.4 0.95 Vdc Vdc 150 360 (lC - 50 , : Pulse W idth ^ 300 pisec, Duty Cycle - 2.0%. *T 2N4125 2N4126 Cjbo Ccb hfe 2N4125 2N4126 50 120 200


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PDF 2N4125 2N4126 2N4126 T0-92 O-226AA) FIGURE11
2n3905A

Abstract: 2N4125 2N4125 NPN
Text: 2N4125. Fig. 8 - Typical dc forward-current transfer ratio characteristics for 2N4126. 34 G , base-to-emitter saturation voltage characteristics for 2N4125 and 2N4126. Fig. 10-Typical coilector-lo^mitter , voltage characteristics lor 2N4126. TERMINAL CONNECTIONS Lead 1 - Emitter Lead 2 - Base Lead 3 - , E SOLÏD'STATE '' ' ' OIE` " "17927 2N4123, 2N4124, 2N4125, 2N4126 T 2*5 -'? C O LLE C T , ( ^j- 2N4123, 2N4124, 2N4125, 2N4126 Silicon Transistors TO-92 T h e G E /R C A 2N 4 1 2 3, 2N


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PDF 0D17TS7 2N4123, 2N4124, 2N4125, 2N4126 92CS-42777 2N3905and 2N3906. 10--Typical 2N3905 2n3905A 2N4125 2N4125 NPN
2N4126

Abstract: 2N4124
Text: 2N4126 Small Signal Transistors (PNP) TO-92 FEATURES .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) PNP Silicon Epitaxial Transistor for switching and amplifier applications. Especially , provided that leads are kept at ambient temperature at a distance of 2 mm from case. 2N4126 ELECTRICAL , temperature at a distance of 2 mm from case. RATINGS AND CHARACTERISTIC CURVES 2N4126 RATINGS AND CHARACTERISTIC CURVES 2N4126 RATINGS AND CHARACTERISTIC CURVES 2N4126 General Semiconductor


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PDF 2N4126 2N4124 2N4126
2001 - Not Available

Abstract: No abstract text available
Text: 2N4126 / MMBT4126 2N4126 MMBT4126 C E C B TO-92 B SOT-23 E Mark: ZF , Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max Units 2N4126 , FR-4 PCB 1.6" X 1.6" X 0.06." © 2001 Fairchild Semiconductor Corporation 2N4126 /MMBT4126, Rev , dB 2N4126 / MMBT4126 PNP General Purpose Amplifier (continued) 250 V CE = 1 .0V 125 °C , 2N4126 / MMBT4126 PNP General Purpose Amplifier (continued) Typical Characteristics


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PDF 2N4126 MMBT4126 2N4126 OT-23
2004 - 2N4126

Abstract: 2N4124 2N4126-BULK 2N4126-TAP
Text: Parts Table Part 2N4126 Type differentiation hFE, 120 to 360 @ - 2.0 mA Ordering code Remarks 2N4126-BULK or 2N4126-TAP Bulk / Ammopack Absolute Maximum Ratings Tamb = 25 °C, unless , 2N4126 VISHAY Vishay Semiconductors Small Signal Transistor (PNP) Features · PNP , at ambient temperature. Document Number 85130 Rev. 1.2, 01-Sep-04 www.vishay.com 1 2N4126 , Current vs. Base-Emitter Voltage Document Number 85130 Rev. 1.2, 01-Sep-04 2N4126 VISHAY


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PDF 2N4126 2N4124 2N4126-BULK 2N4126-TAP D-74025 01-Sep-04 2N4126 2N4126-TAP
2004 - 2N412

Abstract: No abstract text available
Text: VISHAY 2N4126 Vishay Semiconductors Small Signal Transistor (PNP) Features · PNP Silicon , , 18-Aug-04 www.vishay.com 1 2N4126 Vishay Semiconductors Parameter Emitter cutoff current , -Aug-04 VISHAY 2N4126 Vishay Semiconductors 1000 hFE -VCE = 1 V mA 100 80 0.35 0.3 0.25 0.2 0.15 0.1 , 85130 Rev. 1.2, 18-Aug-04 www.vishay.com 3 2N4126 Vishay Semiconductors Packaging for Radial , Rev. 1.2, 18-Aug-04 VISHAY Package Dimensions in mm (Inches) 2N4126 Vishay Semiconductors


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PDF 2N4126 2N4124 D-74025 18-Aug-04 2N412
Not Available

Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE bt.SB'm 0026154 2T1 D A APX £iN < ti< £o 2N4126 , are 2N4123 and 2N4124. QUICK REFERENCE DATA 2N4125 2N4126 - v CBO max. 30 25 V , emitter . /r\ VY ««>« e June 1992 787 N AMER PHILIPS/DISCRETE 2N4125 2N4126 b 'lE , - Collector-emitter voltage (open base) -V c eo max- Emitter-base voltage (open collector) 2N4126 30 , mA 2N4125 2N4126 D.C. current gain * —I q = 2 mA; —V q E = 1 V hFE > < 50


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PDF 2N4126 2N4123 2N4124. 2N4125
2001 - sot-223 zf

Abstract: 2N4126 MMBT4126
Text: 2N4126 / MMBT4126 2N4126 MMBT4126 C E C B TO-92 B SOT-23 E Mark: ZF , , Junction to Case RJA Thermal Resistance, Junction to Ambient Max Units 2N4126 625 5.0 , " X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation 2N4126 /MMBT4126, Rev A , negative polarity for PNP transistors. 250 MHz 10 4.5 120 pF pF 480 4.0 dB 2N4126 , BIAS VOLTAGE (V) 10 2N4126 / MMBT4126 PNP General Purpose Amplifier (continued) Typical


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PDF 2N4126 MMBT4126 2N4126 OT-23 sot-223 zf MMBT4126
2N4126

Abstract: 2N4125 2N4125 NPN 2N4123 2N4124 UBB013
Text: PHILIPS INTERNATIONAL SbE J> 2N4125 2N4126 711005t, 0042bb4 Ö02 «PHIN SILICON PLANAR , 2N4124. QUICK REFERENCE DATA 2N4125 2N4126 Collector-base voltage (open emitter) ~vCBO max. 30 25 , 787 This Material Copyrighted By Its Respective Manufacturer 2N4125 2N4126 V PHILIPS INTERNATIONAL , EC 134) IPHIN T-29-17 Saturation voltages -lc = 50 mA; -Iß = 5 mA 2N4125 2N4126 , < -VßEsat < 400 950 mV mV 2N4125 2N4126 D.C. current gain * -lc= 2mA;-VCE = 1 V hFE > < 50 150 120


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PDF 2N4125 2N4126 711005t, 0042bb4 2N4123 2N4124. 2N4126 2N4125 NPN 2N4124 UBB013
Not Available

Abstract: No abstract text available
Text: 2N4125 2N4126 _ SILICON PLANAR EPITAXIAL TRANSISTORS , 2N 4124. QUICK REFERENCE DATA 2N4125 Collector-base voltage (open e m itte r) 2N4126 C o , allow for flow of plastic and terminal irregularities. September 1994 1167 2N4125 2N4126 JV , Collector-base voltage (open em itte r) 2N4126 v CBO max. 30 25 V C o lle cto r e m itte r , CEsat “ v BEsat mV mV 2N4125 2N4126 > hFE 50 150 120 360 - l c = 50 m A


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PDF 2N4125 2N4126
2001 - MARKING W3 SOT23 TRANSISTOR

Abstract: SOT-23 ZF MARKING ZF SOT-23 Mark ZF sot-23 MARKING CODE Zf 2n4126
Text: PDF e-mail this datasheet [Email] space This pagePrint version 2N4126TA Full Production 2N4126BU , 2N4126 / MMBT4126 2N4126 MMBT4126 C E C B TO-92 E SOT-23 Mark: ZF B PNP , Ambient 2N4126 625 5.0 83.3 200 Max *MMBT4126 350 2.8 357 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation 2N4126 /MMBT4126, Rev A 2N4126 / MMBT4126 PNP General Purpose Amplifier (continued) Electrical


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PDF 2N4126 MMBT4126 2N4126 OT-23 2N4126TA 2N4126BU O-92-3 MARKING W3 SOT23 TRANSISTOR SOT-23 ZF MARKING ZF SOT-23 Mark ZF sot-23 MARKING CODE Zf
Not Available

Abstract: No abstract text available
Text: - 2N4125 2N4126 @ General ~ Amplifier 0 Wide-Band Purpose Switching from from Audio 10 mA to 100 to > 100 MHz mA ,' ~J\:.: Applications Audio Noise Figure = 4-5 dB , ) Voltage* 2N4125 2N4126 2N4125 2N4126 `vCEO* 30 25 30 25 4 - - - - - Vdc Collector-Base Breakdown , ,., :{~~:,., ,.?\*:;+R>,. 2N4125 *$., \,)~: 2N4126 ` .+ .), 1 .$.$!1> .(. ?t*, 2N4125 2N4126 .~:,\\L, ". I `fe I - 2.0 2.5 200 250 - - - - - 4.5 mz `T c ob PF I


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PDF 2N4125 2N4126
2001 - Not Available

Abstract: No abstract text available
Text: Click on a product for detailed qualification data Product 2N4126BU 2N4126TA 2N4126TAR 2N4126TF , 2N4126 / MMBT4126 2N4126 MMBT4126 C E C B TO-92 E SOT-23 Mark: ZF B PNP , Ambient 2N4126 625 5.0 83.3 200 Max *MMBT4126 350 2.8 357 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation 2N4126 /MMBT4126, Rev A 2N4126 / MMBT4126 PNP General Purpose Amplifier (continued) Electrical


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PDF 2N4126 MMBT4126 2N4126 OT-23 O-92-3 2N4126BU 2N4126TA 2N4126TAR
2002 - 2N4126

Abstract: No abstract text available
Text: 2N4126 / MMBT4126 2N4126 MMBT4126 C E C B TO-92 E SOT-23 Mark: ZF B PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 mA as a switch and to 100 mA as an amplifier. Sourced from Process 66 , Thermal Resistance, Junction to Ambient 2N4126 625 5.0 83.3 200 Max *MMBT4126 350 2.8 357 Units mW , Corporation 3-100 2N4126 / MMBT4126 PNP General Purpose Amplifier Electrical Characteristics Symbol


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PDF 2N4126 MMBT4126 2N4126 OT-23 2N3906
2002 - 2N4126

Abstract: general semiconductor 2N4124 2N4124 transistor
Text: 2N4126 Vishay Semiconductors formerly General Semiconductor Small Signal Transistor (PNP) TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) Features min. 0.492 (12.5) 0.181 (4.6) · PNP , -May-02 www.vishay.com 1 2N4126 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics , -May-02 2N4126 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Document Number 88116 07-May-02 www.vishay.com 3 2N4126


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PDF 2N4126 O-226AA 2N4124 20K/box 07-May-02 2N4126 general semiconductor 2N4124 transistor
1997 - MAR 745 TRANSISTOR

Abstract: 2N4124 2N4126 BP317 transistor 2N4126
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4126 PNP general purpose , transistor 2N4126 PINNING FEATURES · Low current (max. 200 mA) PIN · Low voltage (max. 25 V). , transistor 2N4126 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). , Semiconductors Product specification PNP general purpose transistor 2N4126 PACKAGE OUTLINE Plastic , specification PNP general purpose transistor 2N4126 DEFINITIONS Data sheet status Objective


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PDF M3D186 2N4126 2N4124. MAM280 SCA53 117047/00/02/pp8 MAR 745 TRANSISTOR 2N4124 2N4126 BP317 transistor 2N4126
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