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2N4037 Central Semiconductor Corp Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN
2N4037 LEAD FREE Central Semiconductor Corp TRANS PNP 40V 1A TO-39

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2N4037 Central Semiconductor Corp Avnet 0 $0.89 $0.82
2N4037 SPC Multicomp Newark element14 370 $1.18 $0.43
2N4037 Central Semiconductor Corp Future Electronics 0 $1.06 $0.85
2N4037 New Jersey Semiconductor Products, Inc. Bristol Electronics - -
2N4037 Continental Device India Ltd TME Electronic Components 988 $0.66 $0.28
2N4037 Chip One Exchange - -
2N4037 SPC Multicomp element14 Asia-Pacific 325 $1.08 $0.67
2N4037 SPC Multicomp Farnell element14 237 £2.05 £0.64

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2N4037 datasheet (60)

Part Manufacturer Description Type PDF
2N4037 Boca Semiconductor BJT, PNP, Silicon Planar Transistor, IC 1A - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=50-250 / fT(Hz)=60M / Pwr(W)=1 Original PDF
2N4037 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 40V 1A TO-39 Original PDF
2N4037 Continental Device India PNP SILICON PLANAR EXPITAXIAL TRANSISTOR. MEDIUM POWER AMPLIFIER AND SWITCHING APPLICATIONS. Original PDF
2N4037 Motorola CASE 79.04, STYLE 1 TO-39 (TO-205AD) - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=50-250 / fT(Hz)=60M / Pwr(W)=1 Original PDF
2N4037 On Semiconductor General Purpose Transistor Original PDF
2N4037 Siemens Cross Reference Guide 1998 Original PDF
2N4037 Advanced Semiconductor Silicon Transistors Scan PDF
2N4037 Central Semiconductor BJT: PNP: Small Signal Transistor: IC 1A Scan PDF
2N4037 Central Semiconductor PNP METAL CAN Transistors Scan PDF
2N4037 Crimson Semiconductor Transistor Selection Guide Scan PDF
2N4037 Fairchild Semiconductor PNP general purpose transistor. - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=50-250 / fT(Hz)=60M / Pwr(W)=1 Scan PDF
2N4037 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N4037 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
2N4037 Ferranti Semiconductors Shortform Data Book 1971 Scan PDF
2N4037 Ferranti Semiconductors Power Transistors 1977 Scan PDF
2N4037 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
2N4037 General Electric Medium power silicon N-P-N planar transistor. - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=50-250 / fT(Hz)=60M / Pwr(W)=1 Scan PDF
2N4037 Micro Electronics Semiconductor Device Data Book Scan PDF
2N4037 Micro Electronics Silicon Transistor Scan PDF
2N4037 Micro Electronics Semiconductor Devices Scan PDF

2N4037 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N4036

Abstract:
Text: File Number 216 2N4036, 2N4037 , 2N4314 Medium-Power Silicon P-N-P Planar Transistors General-Purpose , saturation voltages u High pulsed beta at high collector current The 2N4036, 2N4037 , and 2N4314 are , -205AD MAXIMUM RATINGS, Absolute-Maximum Values: 2N4036 2N4037 2N4314 * Vcbo , format (JS-6 RDF-1 2N4036; JS-9 RDF-2 2N4037 , 2N4314). 0655 E-06 115 G E SOLI» STATE ' Öl ]>F| 3fl750âl 0D17113 b l~jf27"Z| High-speed fower i ransisiors_5_' 2N4036, 2N4037 , 2N4314 ELECTRICAL


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PDF G01711E 2N4036, 2N4037, 2N4314 2N4314 JEDECTO-205AD 92LS-l26aRf 2N4036. 2N4036 2n4037 transistor 2N4314 2N4036 solid state jf27 I292 tr 2n 60b
1997 - 2n4036

Abstract:
Text: Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N4036 2N4037 PNP Silicon 2 BASE 1 EMITTER MAXIMUM RATINGS Symbol 2N4036 2N4037 Unit Collector – Emitter Voltage VCEO – 65 , Thermal Resistance, Junction to Case 2N4036 2N4037 Unit RqJC 35 35 °C/W , Voltage(1) (IC = – 100 mAdc, IB = 0) VCEO(sus) 2N4036 2N4037 Collector – Base Breakdown Voltage (IC = – 0.1 mAdc) 2N4037 Collector Cutoff Current (VCE = – 85 Vdc, VEB = – 1.5 Vdc


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PDF 2N4036/D 2N4036 2N4037 205AD) 2n4036
2n4036

Abstract:
Text: EBO b < C Pd 2N4036 -6 5 -90 - 7.0 - 0 .5 - 1 .0 5.0 28.6 2N4037 -40 - 60 -7 .0 Unit Vdc Vdc Vdc Ade Ade 2N4036 2N4037 CASE 79-04, STYLE 1 TO-39 (TO-205AD) 5.0 28.6 1.0 5.72 Watts , Characteristic Thermal Resistance, Junction to Case Symbol Rfiuc 2N4036 35 2N4037 35 GENERAL PURPOSE , ) (I q = -0 .1 mAdc) 2N4036 2N4037 2N4037 2N4036 2N4037 2N4036 2N4037 2N4036 2N4037 VCEOtsusJ VfBRICBO , Gain de = -0 .1 mAdc, V ce de = - 1.0 mAdc, V ce (lc = = = - 1 0 V) - 1 0 V) 2N4036 2N4037


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PDF 2N4036 2N4037 2N4037 O-205AD) 2N4037) 2N4036) 2N4037 MOTOROLA
1997 - 2N4036

Abstract:
Text: Transistors 2N4036 2N4037 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N4036 2N4037 Unit Collector ­ Emitter Voltage VCEO ­ 65 ­ 40 Vdc , Symbol Thermal Resistance, Junction to Case 2N4036 2N4037 Unit RqJC 35 35 °C/W , = 0) VCEO(sus) 2N4036 2N4037 Collector ­ Base Breakdown Voltage (IC = ­ 0.1 mAdc) 2N4037 , °C) 2N4036 2N4037 Collector Cutoff Current (VCB = ­ 90 Vdc, IE = 0) (VCB = ­ 60 Vdc, IE = 0) 2N4036


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PDF 2N4036/D 2N4036 2N4037 205AD) 2N4036 2n4037 2n4037 motorola MOTOROLA TO205AD
2N4036

Abstract:
Text: / _ H ig h-S p eed Pow er Transistors File Number 216 2N4036, 2N4037 , 2N4314 Medium-Power , TO-20SAD TER M IN AL DESIGNATIONS T h e 2N4036, 2N4037 , and 2N4314 are doubled-dlffused , -9 RDF-2 2N4037 , 2N4314). 115 0655 E- 06 ô ô ô S S > > < < < G E S O L I D S TATE , - _ ' 2N4036, 2N4037 , LIMITS 2N4037 Min. 2N4314 Min. _ - UNITS Max. -0.1 * -0.02 -0.5 * -100* -0.1 * -0.02 *CBO lE = 0


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PDF 2N4036, 2N4037, 2N4314 O-20SAD 2N4314 2N4036 2N4037 and/tp 4036
1997 - 2n4037

Abstract:
Text: Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N4036 2N4037 PNP Silicon 2 BASE 1 EMITTER MAXIMUM RATINGS Symbol 2N4036 2N4037 Unit Collector ­ Emitter Voltage VCEO ­ 65 ­ 40 , , Junction to Case 2N4036 2N4037 Unit RqJC 35 35 °C/W ELECTRICAL CHARACTERISTICS (TA , CHARACTERISTICS Collector ­ Emitter Sustaining Voltage(1) (IC = ­ 100 mAdc, IB = 0) VCEO(sus) 2N4036 2N4037 Collector ­ Base Breakdown Voltage (IC = ­ 0.1 mAdc) 2N4037 Collector Cutoff Current (VCE = ­ 85 Vdc


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PDF 2N4036/D 2N4036 2N4037 205AD) 2n4037 2N4036 2n4036 equivalent
2n4036

Abstract:
Text: Transistors PNP Silicon COLLECTOR 3 2N4036 2N4037 BASE MAXIMUM RATINGS Rating Symbol 2N4036 2N4037 , +200 230 TH ERM AL CHARACTERISTICS Characteristic Symbol 2N4036 2N4037 Unit Thermal Resistance , Vdc, lc = 0) (VEB = -5 .0 Vdc, lc = 0) v CEO(sus) 2N4036 2N4037 v (BR)CBO Vdc -6 5 -4 0 -6 0 Vdc mAdc - - 0 1 -10 0 nAdc - - -1.0 -0.25 nAdc - - -1 0 -1 .0 2N4037 'CEX 2N4036 2N4037 'CBO 2N4036 2N4037 'EBO 2N4036 2N4037 1. Pulse Test: Pulse Width < 300 (is, Duty Cycle < 2.0%. MOTOROLA


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PDF 2N4036/D 2N4036 2N4037 2N4037 205AD) B0217. MOTOROLA TO205AD
2N4314

Abstract:
Text: Maxim um operating areas fo r 2N4036, 2N4037. and 2N4314. SECTOR & Ï5 IJ U SEMICOND S£ O , P ow er Transistors ~r-3^>- ì i F ile N u m b e r 2N4036, 2N4037 , 2N4314 216 HARRIS , h e 2N4036, 2N4037 , a n d 2N 4314 are d o u b le d -d iffu s e d , e p ita x ia l-p la n a r, s ilic , (JS-6 RDF-1 2N4036; JS-9 RDF-2 2N4037 , 2N4314). S HIHAS - - I "33 ^ ^ _ Pow er Transistors 2N4036, 2N4037 , 2N4314 ELECTRICAL CHARACTERISTICS, a t Case Temperature (T q! = 25 °C unless


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PDF 2N4036, 2N4037, 2N4314 92CS-2221I PN4036. 2N4314 2N4036
2N4036

Abstract:
Text: Schlum berger Com pany 2N4036/ 2N4037 r-z? -^ PNP G eneral Purpose Transistor ABSOLUTE M AXIM , 2N4037 TO-39 TO-39 -6 5 ° C to 200° C -6 5 ° C to 200° C 4036 5.0 W 4036 -6 5 V -9 0 V - 7 .0 V , MAX -6 5 2N4037 M IN MAX -4 0 -6 0 UNITS V V TEST C O N D IT IO N S lc = 100 mA, lB = 0 lc = , /°C ); ( 2N4037 ) junctfon-to-case thermal resistance of 175°C/W (derating factor of 5.71 m W /°C). , 4 0 DS 7 S 7 D 7 T ~ 8 84 4D D 27 2 75 57 70 0 D * 2N4036/ 2N4037 T -3 A . X2


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PDF 2N4036/2N4037 2N4036 2N4037 2N4037 R/ON 4037
2010 - 2N4036

Abstract:
Text: 2N4036 2N4037 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4036, 2N4037 are epitaxial planar PNP Silicon Transistors designed for small , ton VCE=30V, IC=150mA, IB1=IB2=15mA 110 toff VCE=30V, IC=150mA, IB1=IB2=15mA 700 2N4037 60 40 7.0 1.0 0.5 5.0 1.0 -65 to +200 35 2N4037 MIN MAX 0.25 100 1.0 40 1.4 1.5 15 , V V V MHz pF ns ns R1 (1-April 2010) 2N4036 2N4037 PNP SILICON TRANSISTOR TO


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PDF 2N4036 2N4037 2N4036, 150mA 500mA 20MHz 2N4036 2n4037 2N40* Central
Not Available

Abstract:
Text: SGS-THOMSON R!tlD(EæilLI(g'iri©iD(SS 2N4037 MEDIUM SPEED SWITCH D E S C R IP T IO N The 2N4037 is a silicon planar epitaxial PNP tran sistor in a Jedec TO-39 metal case. It is intended particularly , Unit V V V V V A A W °C lc Ib P tot November 1988 -1 (/) (Q 1/4 2N4037 TH E R M A L , cycle = 1,5 %. 2/4 ^ 7# T SGS-THOMSON raeRoaLieTfRwes 2N4037 T039 MECHANICAL DATA mm , w es 3/4 2N4037 Information furnished is believed to be accurate and reliable. However, S


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PDF 2N4037
2010 - 2n4037 transistor

Abstract:
Text: 2N4037 Medium Power Silicon N-P-N Planar Transistor. 6.90 Transistor. http://store.americanmicrosemiconductor.com/ 2n4037.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N4037 2N4037 M edium Po w er Silic o n N- P- N Planar Trans is t o r. Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find , Manufacturer Partnumber: List Price: Our Price: You Save: Americanmicrosemi 2N4037 $ 8.62 Information


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PDF 2N4037 com/2n4037 2N4037 2n4037 transistor NPN Transistor 2n4037
2010 - small signal transistors

Abstract:
Text: 2N4037 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type 2N4037 Tj 200 hFE max 250 hfe 3.0 Industry Type 2N4037 Notes VCBO 60 hFE A 150m fT 60 Polarity PNP VCEO 40 VCE 1.4 Case Style TO-205AD/TO-39 Power Dissipation 1.0 hFE min 50 VCE A 150m Visa & Mastercard Accepted! STI's Terms and Conditions 07-Sep-2010 Semiconductor Technology


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PDF 2N4037 2N4037 O-205AD/TO-39 07-Sep-2010 small signal transistors
1994 - 2N4037

Abstract:
Text: 2N4037 MEDIUM SPEED SWITCH DESCRIPTION The 2N4037 is a silicon planar epitaxial PNP transistor in a Jedec TO-39 metal case. It is intended particularly as medium speed saturated switch and general , 1/4 November 1988 2N4037 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance , %. 2/4 2N4037 TO39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ , D G I H E F A L B P008B 3/4 2N4037 Information furnished is believed to be


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PDF 2N4037 2N4037 I 508 V
2004 - Not Available

Abstract:
Text: LivePerson l l l l Submit ¡ ¡ ¡ 2N4037 Availability Buy 2N4037 at our online store ! 2N4037 Information Cate gory » Transistors Class » Transistors; Bipolar; Si PNP Power Type » Transistors; Bipolar; Si PNP Power 2N4037 Specifications Milita ry/High-R e l : N V(BR )C EO (V) : 40 V


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PDF 2N4037
2N4036

Abstract:
Text:  2N4036 2N4037 Central Semiconductor corp. Central semiconductor corp. 41 !<»|l SILICON PNP TRANSISTOR 145 Adams Avenue Hauppauge, New York 11 788 JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4036, 2N4037 are Silicon PNP Epitaxial Planar Transistors designed for small signal and medium power general purpose industrial applications. MAXIMUM RATINGS (TC=25°C unless otherwise noted , =25°C) SYMBOL TEST CONDITIONS 2N4036 MIN 2N4037 MAX MIN MAX UNIT cbo Vcb=60V 0.02 0.25 uA 1 eb0 Veb


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PDF 2N4036 2N4037 2N4036, 2N4037 100mA 100mA, 100mA 150mA,
2001 - Not Available

Abstract:
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EXPITAXIAL TRANSISTOR. 2N4037 TO-39 Metal Can Package , Device India Limited Data Sheet 50-250 <1.4 <1.5 V V Page 1 of 3 2N4037 TO-39 Metal , " x 15" x 13.5" 32K 40 kgs Page 2 of 3 Notes 2N4037 TO-39 Metal Can Package Disclaimer , 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com 2N4037Rev230701 Continental Device India


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PDF 2N4037 C-120 2N4037Rev230701
Not Available

Abstract:
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EXPITAXIAL TRANSISTOR. 2N4037 TO-39 Metal Can Package MEDIUM POWER AMPLIFIER AND , 50-250 <1.4 <1.5 V V Page 1 of 3 2N4037 TO-39 Metal Can Package TO-39 Metal Can Package A , " 32K 40 kgs Page 2 of 3 Notes 2N4037 TO-39 Metal Can Package Disclaimer The product , www.cdilsemi.com email@cdil.com 2N4037Rev230701 Continental Device India Limited Data Sheet Page 3 of 3


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PDF 2N4037 C-120 2N4037Rev230701
2n4037rev230701

Abstract:
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EXPITAXIAL TRANSISTOR. 2N4037 TO-39 Metal Can Package MEDIUM POWER AMPLIFIER AND , 50-250 <1.4 <1.5 V V Page 1 of 3 2N4037 TO-39 Metal Can Package TO-39 Metal Can Package , " 32K 40 kgs Page 2 of 3 Notes 2N4037 TO-39 Metal Can Package Disclaimer The product , www.cdilsemi.com email@cdil.com 2N4037Rev230701 Continental Device India Limited Data Sheet Page 3 of 3


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PDF 2N4037 C-120 2N4037Rev230701 2n4037rev230701 2N4037 transistor 2n4037
Not Available

Abstract:
Text: 2N/PN3053 2N/PN4037 COMPLEMENTARY SILICON TRANSISTORS T0-92A TO-39 2N/PN3053(NPNX &^2N/PN463?(PNP) are complementary silicon planar epitaxial transistors for use in AF medium power drivers and outputs, as well as for switching applications. C E B 2N3053 2N4037 ABSOLUTE MAXIMUM , /PN4037 éOV 60V 40V 40y 5V TV 0.7A 1A 1W *(2N3053/ 2N4037 ) 0.625W (PN3053/PN4037) -65 to +200^C (2N3053/ 2N4037 ) -55 to +150 C (PN3053/PN4037) ELECTRICAL CHARACTERISTICS (T&=25°C) PARAMETER


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PDF 2N/PN3053 2N/PN4037 T0-92A 2N/PN3053 2N/PN463? 2N3053 2N4037 PN3053 PN4037
2n4037rev230701

Abstract:
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EXPITAXIAL TRANSISTOR. 2N4037 TO-39 Metal Can Package MEDIUM POWER AMPLIFIER AND SWITCHING , 50-250 <1.4 <1.5 V V Page 1 of 3 2N4037 TO-39 Metal Can Package TO-39 Metal Can Package , " 32K 40 kgs Page 2 of 3 Notes 2N4037 TO-39 Metal Can Package Disclaimer The product , www.cdilsemi.com email@cdil.com 2N4037Rev230701 Continental Device India Limited Data Sheet Page 3 of 3


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PDF ISO/TS16949 2N4037 C-120 2N4037Rev230701 2n4037rev230701 2N4037
2n3053 complementary

Abstract:
Text: 2N/PN3053(NPNX &_2N/PN4037(PNP) are complementary silicon planar epitaxial transistors for use in AF medium power drivers and outputs, as well as for switching applications. 2N/PN3053 2N/PN4037 COMPLEMENTARY SILICON TRANSISTORS C E B 2N3053 2N4037 T0-92A PN3053 PN4037 ABSOLUTE MAXIMUM RATINGS >or p-n-pdevicei, voltage andcurrirttv«lu«»r. negativ«, Collector-Base Voltage Collector-Emitter Voltage , +200^C (2N3053/ 2N4037 ; 55 to +150 C (PN3053/PN4037, ELECTRICAL CHARACTERISTICS (TA=25°C) PARAMETER


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PDF 2N/PN3053 2N/PN4037 2N3053 2N4037 T0-92A PN3053 PN4037 2N/PN3053 2n3053 complementary
TRANSistor BC108

Abstract:
Text: 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5 150 15 20 60 150 80 50 600 TO-39 2N1131 , 60 - 0.5 30 0.5 400 TO-46 - ZT210 60 40 1000 1.4 150 15 20 100 150 60 50 1000 TO-39 ZT94 2N4037 60 , . Package lc Vceo Volts JO-39 1A TO-39 2A TO-39 3A TO-39 5A TO-39 7.5A TO-39 10A 40 2N4037 * BSV60 60 , -39 2N4037 1 40 1.4 0.15 0.015 50 250 0.15 - - - 1* * TP-39 •at Tamb = 25°C P10


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PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 TRANSistor BC108 2n4001 TRANSISTOR TRANSISTOR BC140 applications of Transistor BC108 Transistor BCY58 2N40361 Transistor BC177 2n4037 2N4001
2N40

Abstract:
Text: Symbol v CEO v CBO vebo 2N4036 -6 5 -9 0 - 7 .0 - 0 .5 - 1 .0 2N4037 -4 0 -6 0 - 7 .0 Unit Vdc Vdc Vdc A de Ade 2N4036 2N4037 CASE 79-04, STYLE 1 TO-39 (TO-205AD) Iß >C PD 5 .0 2 8 .6 , to C a s e GENERAL PURPOSE TRANSISTORS Symbol R (iJC 2N4036 35 2N4037 35 Unit C W , MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2N4036, 2N4037 FIGU RE 1 - CU R R EN T GAIN CH


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PDF 2N4036 2N4037 2N4036 2N40
2N40361

Abstract:
Text: PLANAR SWITCHING PLANAR SWITCHING TRANSISTOR SELECTOR CHART Devices listed are NPN except where marked with* which signifies PNP. Package 'c Volts TO-39 1A TO-39 2A TO-39 3A TO-39 5A TO-39 7 '5A TO-39 10A 40 2N4037 * BSV60 60 2N4036* BSV64 BFX34 2N3418 2 N3420 BUY90* BUX34 BUY80 BUY91 * BUY81 BUY92" BUY82 80 2 N4000 2N3419 2N3421 100 2 N4001 TO-39 17 PNP SWITCHING TABLE 7 - , 1 65 0-65 0-15 0015 40 140 0-15 110 700 0-15 1 * TO-39 2N4037 1 40 1 -4 0-15 0015 50 250 0-15 — â


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PDF 2N4037 BSV60 2N4036* BSV64 BFX34 2N3418 N3420 BUY90* BUX34 BUY80 2N40361 N4001 BUY90 BSV60 2N4037 2N4036
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