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2N3905 Central Semiconductor Corp Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN
2N3905 LEAD FREE Central Semiconductor Corp TRANS PNP 40V TO-92
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2N3905 Central Semiconductor Corp Future Electronics - $0.19 $0.15
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2N3905BU Fairchild Semiconductor Corporation Rochester Electronics 28,324 $0.02 $0.02
2N3905RA National Semiconductor Corporation Bristol Electronics 11,375 $0.11 $0.02
2N3905RLRA Motorola Semiconductor Products Bristol Electronics 1,200 - -
2N3905TA ON Semiconductor Avnet - - -
2N3905TAR Fairchild Semiconductor Corporation Bristol Electronics 186 - -
2N3905TF Fairchild Semiconductor Corporation Rochester Electronics 20,000 $0.02 $0.02
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2N3905 datasheet (67)

Part Manufacturer Description Type PDF
2N3905 Central Semiconductor Small Signal Transistors Original PDF
2N3905 Continental Device India PNP SILICON PLANAR SWITCHING TRANSISTORS Original PDF
2N3905 Diotec Si-Epitaxial PlanarTransistors Original PDF
2N3905 Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
2N3905 Fairchild Semiconductor Small Signal Transistor Original PDF
2N3905 Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
2N3905 On Semiconductor General Purpose Transistors PNP Original PDF
2N3905 Philips Semiconductors Silicon Planar Epitaxial Transistor Original PDF
2N3905 Allegro MicroSystems General Purpose Bipolar Transistor, PNP, 40 MinV, TO-92, 3-Pin Scan PDF
2N3905 Central Semiconductor NPN EPOXY - LOW NOISE LEVEL AMPLIFIER / NPN EPOXY - RF/IF OSCILLATOR Scan PDF
2N3905 Central Semiconductor Low Noise Level Amp / Oscillator / Switching Transistors Scan PDF
2N3905 Crimson Semiconductor Transistor Selection Guide Scan PDF
2N3905 Diodes LEAD MOUNTED TRANSISTORS Scan PDF
2N3905 Fairchild Semiconductor PNP small signal general purpose amplifier & switch. Scan PDF
2N3905 Fairchild Semiconductor PNP General Purpose Amplifier Scan PDF
2N3905 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N3905 Ferranti Semiconductors E-Line Transistors 1977 Scan PDF
2N3905 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
2N3905 General Electric Semiconductor Data Handbook 1977 Scan PDF
2N3905 General Electric Planar epitaxial PNP Silicon Transistor. -40V, 200mA. Scan PDF

2N3905 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N3906

Abstract: 2n3905 tr 2n3906 transistor 2N3905 2n3906 PNP transistor DC current gain 3906 pnp 2N3906 PNP transistor
Text: 2N3905 /3906 GENERAL PURPOSE TRANSISTOR · Cotlector-Em itter Voltage: V c e o " 4 0 V · Collector , Voltage Collector Cut-off Current Base Cut-off Current *D C Current Gain 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 *C olleclor-Em itter Saturation Voltage *Base-Em itter Saturation Voltage Output Capacitance Current Gain Bandwidth Product : 2N3905 2N3906 Turn On Time Turn O ff Time : 2N3905 2N3906 t0N toFF Sym bol BVcio BVceo BVu o Icex Ibi hfE Test C onditions lc" -10M , Ie" 0


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PDF 2N3905/3906 625mW 2N3905 2N3906 2N3900MHz -10mA tr 2n3906 transistor 2N3905 2n3906 PNP transistor DC current gain 3906 pnp 2N3906 PNP transistor
2000 - 2N3905

Abstract: 2N3906 transistor 2N3905
Text: 2N3905 /3906 2N3905 /3906 General Purpose Transistor · Collector-Emitter Voltage: VCEO=-40V · , * DC Current Gain : 2N3905 : 2N3906 : 2N3905 : 2N3906 : 2N3905 : 2N3906 : 2N3905 : 2N3906 : 2N3905 , Output Capacitance Current Gain Bandwidth Product : 2N3905 : 2N3906 Turn On Time Turn Off Time : 2N3905 , International Rev. A, February 2000 2N3905 /3906 Typical Characteristics VBE(sat), VCE(sat)[V , 2N3906 100 2N3905 -0.1 VCE(sat) 10 -1 -10 -100 -1000 -0.01 -0.1 -1 -10 -100


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PDF 2N3905/3906 625mW 2N3906 2N3905 transistor 2N3905
2n3906

Abstract: transistor 2N3905 pin configuration NPN transistor 2N3906 2n3906 equivalent transistor 2n3905 data sheet transistor 2n3906 2N3906 plastic 2n3905 2n3906 transistor 2N3906 datasheet 2n3906 equivalent
Text: ST 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier , : 09/03/2007 ST 2N3905 / 2N3906 Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE , V -VCEsat -VCEsat - 0.25 0.4 V V -VBEsat -VBEsat 2N3905 2N3906 hFE hFE hFE , Max. -ICBO 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 Min , : 09/03/2007 ST 2N3905 / 2N3906 DC Current Gain 2 VCE=1V TJ=125 C 1 hFE (Normalized


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PDF 2N3905 2N3906 2N3903 2N3904 100mA 2n3906 transistor 2N3905 pin configuration NPN transistor 2N3906 2n3906 equivalent transistor data sheet transistor 2n3906 2N3906 plastic 2n3905 2n3906 transistor 2N3906 datasheet 2n3906 equivalent
transistor 2N3905

Abstract: 2N3906 hie 2n3906 ST 2n3904 2N3906 plastic transistor 2N3906 datasheet pin configuration NPN transistor 2n3906 transistor 2N3906 2N3903 2N3904
Text: ST 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier , : 06/12/2005 ST 2N3905 / 2N3906 Characteristics at Tamb = 25 OC Parameter Symbol Min , 20 V, -IC = 10 mA, f = 100 MHz ST 2N3905 fT 200 - MHz ST 2N3906 fT 250 - , , - IC = 100 mA ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 Collector Saturation Voltage Base Saturation Voltage Collector


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PDF 2N3905 2N3906 2N3903 2N3904 100mA transistor 2N3905 2N3906 hie 2n3906 ST 2n3904 2N3906 plastic transistor 2N3906 datasheet pin configuration NPN transistor 2n3906 transistor 2N3906
2N3906

Abstract: transistor 2N3905 2N3905 2n3906 PNP transistor DC current gain transistor T43 S03 pnp transistor 3906 3906 pnp transistor 2N3906 transistor pnp 3906
Text:  2N3905 /3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter , : 2N3905 Vce=-1V, lc= —0.1mA 30 2N3906 60 2N3905 Vce=-1V, lc = — 1 m A 40 2N3906 80 2N3905 Vce=-1V, lc= — 10mA 50 150 2N3906 100 300 2N3905 Vce=-1V, lc= —50mA 30 2N3906 60 2N3905 Vce=-1V, lc= 100mA 15 2N3906 30 •Collector-Emitter Saturation Voltage Ve e , : 2N3905 f= 100MHz 200 MHz 2N3906 250 MHz Turn On Time ton Vcc=-3V, Vbe = -0.5V 70 ns Turn Off


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PDF 2N3905/3906 625mW 2N3906 Widths300 -30-SO DD2S024 transistor 2N3905 2N3905 2n3906 PNP transistor DC current gain transistor T43 S03 pnp transistor 3906 3906 pnp transistor 2N3906 transistor pnp 3906
2N3906 JEDEC

Abstract: 2N3906 hie 2N3906 2N3905 Equivalent 2n3906 npn 2n3906 equivalent 2N3904 2N3906/BD559 2N4123 2N4124
Text: 350 2N3904 NPN 40 100 300 10 iHHj .3 50 ■Bl| 350 ?.5 200 350 2N3905 PNP 40 50 150 10 hhmi 50 250 , , 5mA 2N3905 2N 3904 40 1 100-300 10mA 1 0.3 50mA, 5tA 2N3906 2N3905 40 50-1 50 10mA 1 0.4 50mA , mmslSSISm. 3 0.5 2N3905 PNP 40 70 260 mÊÊÊÊÊ^è 1 ^ 3 0.5 2N3906 PNP 40 300 WsSÌÈmM 1 3 0.5 , 2N3905 2N3906 The General Electric 2N3905 and 2N3906 are silicon PNP planar epitaxial transistors , IV, Ic = 100mA) 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 401 SYMBOL


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PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N3906 JEDEC 2N3906 hie 2N3905 Equivalent 2n3906 npn 2n3906 equivalent 2N3906/BD559
2N3906 hie

Abstract: 2n3906 2n3906 equivalent transistor transistor ST 2N3904 2N3905 ST 2n3904 st2n3906 2N3906 plastic transistor 2N3905 2N3903
Text: ST 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier , ) ® Dated : 06/12/2005 ST 2N3905 / 2N3906 Characteristics at Tamb = 25 OC Parameter Symbol Min , 20 V, -IC = 10 mA, f = 100 MHz ST 2N3905 fT 200 - MHz ST 2N3906 fT 250 - , , - IC = 100 mA ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 Collector Saturation Voltage Base Saturation Voltage Collector


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PDF 2N3905 2N3906 2N3903 2N3904 100mA 2N3906 hie 2n3906 2n3906 equivalent transistor transistor ST 2N3904 ST 2n3904 st2n3906 2N3906 plastic transistor 2N3905
1996 - 2N3905 MOTOROLA

Abstract: 2N3906 2N3905 2N3906 MOTOROLA 2n3906 equivalent 2N3906 JEDEC 2N3906 APPLICATION 2N3905 Equivalent 2N3906 hie 1N916
Text: MOTOROLA Order this document by 2N3905 /D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N3906* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 , 2N3905 2N3906 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Min Max 2N3905 2N3906 30 60 - - (IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 40 80 - - (IC = 10 mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 50 100 150 300 (IC = 50


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PDF 2N3905/D 2N3905 2N3906* 2N3905/D* 2N3905 MOTOROLA 2N3906 2N3905 2N3906 MOTOROLA 2n3906 equivalent 2N3906 JEDEC 2N3906 APPLICATION 2N3905 Equivalent 2N3906 hie 1N916
2N3906

Abstract: 2N3905 Equivalent 2N3905 2N3906 motorola 2N3905 MOTOROLA tr 2n3906 TR 3906 PNP SM 2n3906 equivalent 2904S
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon 2N3905 2N3906 , all-Signal Transistors, FETs and Diodes Device Data 2-9 2N3905 2N3906 ELEC TR IC A L CHARACTERISTICS , OC = 0.1 mAdc, V c e = 1-0 Vdc) hFE 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2 , ) fT 2N3905 2N3906 200 250 4.5 MHz C 0bo Cibo hje 2N3905 2N3906 hre 2N3905 2N3906 hfe 2N3905 2N3906 h0e 2N3905 2N3906 NF 2N3905 2N3906 - PF - 10.0 pF kO 0.5 2.0 8.0 12 X 10~4


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PDF 2N3905 2N3906* O-226AA) CHARACTE70 2N3906 2N3905 Equivalent 2N3906 motorola 2N3905 MOTOROLA tr 2n3906 TR 3906 PNP SM 2n3906 equivalent 2904S
2n3906 equivalent transistor

Abstract: 2N3906 2n3906 hie 2N3905 2N3906 MOTOROLA 2N3905 Equivalent 2N3905 MOTOROLA transistor 2N3905 2n3906 equivalent tr 2n3906
Text: Resistance, Junction to Ambient R9JA 200 °c.w 2N3905 2N3906 CASE 29-04, STYLE 1 TO-92 (TO-226AA) GENERAL , ) !CEX — 50 nAdc ON CHARACTERISTICS! 1) DC Current Gain j (lc = 0 1 mAdc, Vce = 1 0 Vdc) I 2N3905 2N3906 hFE 30 60 _ I , He = 1 o mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 40 80 — »C = 10 mAdc, Vce = 1-OVdcl 2N3905 2N3906 50 100 150 300 HC = 50 mAdc. VCE = 1.0 Vdc) 2N3905 2N3906 30 60 — ('C = 100 mAdc, Vce = 10 Vdc' 2N3905 2N3906 15 30 — Collector-Emitter Saturation Voltage "c - 10 mAdc, Ib = 1 0


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PDF J-150 2N3905 2N3906 O-226AA) 2N3905, 2n3906 equivalent transistor 2N3906 2n3906 hie 2N3906 MOTOROLA 2N3905 Equivalent 2N3905 MOTOROLA transistor 2N3905 2n3906 equivalent tr 2n3906
1996 - 2N3906 JEDEC

Abstract: 2N3906 MOTOROLA 2N3906 2N3905 2n3906 equivalent 2N3906 OR EQUIVALENT 2N3905 MOTOROLA 2N3906 APPLICATION 2N3905 Equivalent 1N916
Text: MOTOROLA Order this document by 2N3905 /D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N3906* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 , 2N3905 2N3906 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 2N3905 2N3906 30 60 - - (IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 40 80 - - (IC = 10 mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 50 100 150 300


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PDF 2N3905/D 2N3905 2N3906* 2N3906 JEDEC 2N3906 MOTOROLA 2N3906 2N3905 2n3906 equivalent 2N3906 OR EQUIVALENT 2N3905 MOTOROLA 2N3906 APPLICATION 2N3905 Equivalent 1N916
2004 - 2N3906

Abstract: 2N3906 die 2N3906 plastic 2N3905 2n3906 equivalent 2n3906 npn 2n3906 datasheet 10D3 2N3903 2N3904
Text: 2N3905 , 2N3906 PNP Switching Transistors Si-Epitaxial PlanarTransistors PNP Version , Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) 2N3905 , Gehäuse auf Umgebungstemperatur gehalten werden 32 General Purpose Transistors 2N3905 , 2N3906 , Kollektor-Basis-Stromverhältnis - VCE = 1 V, - IC = 0.1 mA 2N3905 2N3906 hFE hFE 30 60 ­ ­ ­ ­ - VCE = 1 V, - IC = 1 mA 2N3905 2N3906 hFE hFE 40 80 ­ ­ ­ ­ - VCE = 1 V, - IC = 10 mA


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PDF 2N3905, 2N3906 UL94V-0 2N3905 2N3903, 2N3904 2N3906 2N3906 die 2N3906 plastic 2N3905 2n3906 equivalent 2n3906 npn 2n3906 datasheet 10D3 2N3903 2N3904
2N39Q3

Abstract: 2N3906 2N3906 transistor by philips 7Z14 2N39 2N3904 2N3905 1N916 IEC134 2n3823
Text: N AMER PHILIPS/DISCRETE 2SE D ■bfciS3T31 GD17Mtt. T ■I 2N3905 J2N3906 r- 3 7- SILICON , Respective Manufacturer N AMER PHILIPS/DISCRETE 2N3905 2N3906 2SE D bbS3131 00174b? 1 T-37-15 RATINGS , ~vBEsat < < 400 mV , 950' mV * D.C. current gain * -lC = 0,1 mA;VCE = 1 V 2N3905 2N3906 hFE > 30 60 , ■kbS3131 0Q174iaö 3 ■2N3905 2N3906 T-37-15 V h-parameters (common emitter) -lc = 1 mA;-VCE = 10V;f=1 kHz 2N3905 2N3906 Input impedance Reverse voltage transfer ratio Small-signal


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PDF bfciS3T31 GD17Mtt. 2N3905 J2N3906 2N39Q3 2N3904. 2N3906 2N3906 transistor by philips 7Z14 2N39 2N3904 1N916 IEC134 2n3823
2n3906

Abstract: 2N3905 2N3906 hie transistor 2N3905 st2n3906 2N3906 plastic ST 2n3904 data sheet transistor 2n3906 2N3903 transistor ST 2N3906
Text: ST 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier , , Stock Code: 724) R Dated : 07/12/2002 ST 2N3905 / 2N3906 Characteristics at Tamb=25 OC Symbol , )EBO 5 - - V at -VCE=20V,-IC=10mA,f=100MHz ST 2N3905 fT 200 - - MHz ST , - VCE=1V,- IC=100mA ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 Collector Saturation Voltage Base Saturation Voltage Collector


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PDF 2N3905 2N3906 2N3903 2N3904 100mA 2n3906 2N3906 hie transistor 2N3905 st2n3906 2N3906 plastic ST 2n3904 data sheet transistor 2n3906 transistor ST 2N3906
2N3906

Abstract: transistor 2N3905 2N3906 plastic ST 2n3904 2n3906 equivalent transistor 2n3906 hie 2N3905 2N3906/C2N3906 2N3903 PNP switching transistor 2N3906 mhz
Text: ST 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier , Code: 724) Dated : 07/12/2002 ST 2N3905 / 2N3906 Characteristics at Tamb=25 OC Symbol Min , )EBO 5 - - V at -VCE=20V,-IC=10mA,f=100MHz ST 2N3905 fT 200 - - MHz ST , - VCE=1V,- IC=100mA ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 Collector Saturation Voltage Base Saturation Voltage Collector


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PDF 2N3905 2N3906 2N3903 2N3904 100mA 2N3906 transistor 2N3905 2N3906 plastic ST 2n3904 2n3906 equivalent transistor 2n3906 hie 2N3906/C2N3906 PNP switching transistor 2N3906 mhz
2004 - Not Available

Abstract: No abstract text available
Text: 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications , distance of 2 mm from case G S P FORM A IS AVAILABLE mW C C 2N3905 / 2N3906 Characteristics at , - - V -V(BR)EBO 5 - - V at -VCE=20V,-IC=10mA,f=100MHz ST 2N3905 fT 200 , - VCE=1V,- IC=50mA at- VCE=1V,- IC=100mA ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 Collector Saturation Voltage Base Saturation


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PDF 2N3905 2N3906 2N3903 2N3904 O2N3905 100mA
2010 - 2N3905

Abstract: transistor 2N3905
Text: 2N3905 General Purpose Transistor. Collector-emitter Voltage: Vceo = . http://store.americanmicrosemiconductor.com/ 2n3905.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N3905 2N3905 G eneral Purpo se Trans is t o r. C o llec t o r-em it t er Vo lt , ://store.americanmicrosemiconductor.com/ 2n3905.html Low-Power High-Frequency Page. Order Help Desk U.S Orders Your , : Our Price: You Save: Americanmicrosemi 2N3905 $ 1.51 $ 1.21 $ 0.30 Total Price $ 1.21


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PDF 2N3905 com/2n3905 2N3905 transistor 2N3905
2N3904

Abstract: 2n3906 for 2N3904 2N3906 JEDEC 2n3906 rca 2N3906-O 2N3903 2N3905 2N3904 230 2N3S04
Text: transfer ratio characteristics for 2N3905. iôôôe e 4 E 2 U Ib COLLECTOR-TO-EMITTER VOLTAGE (VCE , Transistors- _- 2N3903, 2N3904, 2N3905 , 2N3906 r~ 3S"/; Silicon Transistors TO-92 The GE/RCA 2N3903, 2N3904 NPN types and 2N3905 , tions. PNP values are negative; observe proper polarity. 2N3906 PNP types , : 2N3903 2N3905 2N3S04 2N3906 collector to emitter voltage (vce0 , 17925 D -— Signal Transistors 2N3903, 2N3904, 2N3905 , 2N3906 -T-yi-ts ELECTRICAL CHARACTERISTICS


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PDF 307SQÃ 2N3903, 2N3904, 2N3905, 2N3906 2N3904 2N3903 for 2N3904 2N3906 JEDEC 2n3906 rca 2N3906-O 2N3905 2N3904 230 2N3S04
Not Available

Abstract: No abstract text available
Text: 2N3905 /3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Em itter Voltage: V Ceo =40V • C o llector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS , Base Cut-off Current *DC Current Gain :2N 3905 2N3906 2N3905 2N3906 2N 3905 2N3906 2N3905 2N3906 2N3905 2N3906 "Collector-Emitter Saturation Voltage B V cbo BV ceo BV bbo *Base-Emitter , ) Typ T43 ■V V V V PF MHz MHz ns ns ns 2N3905 /3906 PNP EPITAXIAL SILICON


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PDF 2N3905/3906 625mW 2N3906 300//s, 7Tb414E 0D2S02M
1997 - transistor 2N3905

Abstract: 2N3905 2N3906
Text: 2N3905 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 66. See 2N3906 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise , 2N3905 625 5.0 83.3 mW mW/°C °C/W 200 °C/W 2N3905 Discrete POWER & Signal , Time I B1 = IB2 = 1.0 mA 60 ns *Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0% 2N3905


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PDF 2N3905 2N3906 transistor 2N3905 2N3905
1996 - 2N3905 MOTOROLA

Abstract: 2N3905 Equivalent motorola MMBT3906 sot-23 2N3906 PZT3906 MMPQ3906 MMBT3906 2N3905 1N916 model of 2n3906
Text: MOTOROLA Order this document by 2N3905 /D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N3906* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 , information only. 2N3905 2N3906 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 2N3905 2N3906 30 60 - - (IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 40 80 - - (IC = 10 mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 50 100 150


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PDF 2N3905/D 2N3905 2N3906* 2N3905 MOTOROLA 2N3905 Equivalent motorola MMBT3906 sot-23 2N3906 PZT3906 MMPQ3906 MMBT3906 2N3905 1N916 model of 2n3906
Not Available

Abstract: No abstract text available
Text: , Duty Cycle=2% µ 2N3905_3906Rev_1 071105E Continental Device India Limited Data Sheet Page 1 , =10mA IB1=1B2=1mA < 200 < 60 < 225 < 75 ns ns x10 2N3905_3906Rev_1 071105E Continental , " 32K 12. 5 kgs 2N3905_3906Rev_1 071105E Continental Device India Limited Data Sheet Page , Wast e Elect rical and Elect ronic Equipm ent ( WEEE) . 2N3905_3906Rev_1 071105E Continental , email@cdil.com www.cdilsemi.com 2N3905_3906Rev_1 071105E Continental Device India Limited Data Sheet


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PDF 2N3905 2N3906 C-120 3906Rev 071105E
2011 - PNP switching transistor 2N3906 mhz

Abstract: transistor 2N3905 2n3906 2N3906 NPN Transistor 2N3904 CENTRAL
Text: 2N3905 2N3906 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3905 and 2N3906 types are PNP silicon transistors designed for general purpose amplifier and switching applications. NPN complementary types are 2N3903 and 2N3904. MARKING: FULL PART , hFE hFE hFE hfe fT Cob Cib NF ton toff SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg JA 2N3905 MIN MAX 50 40 40 , =10mA, IB1=IB2=1.0mA MHz pF pF dB ns ns R2 (17-October 2011) 2N3905 2N3906 PNP SILICON TRANSISTOR TO


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PDF 2N3905 2N3906 2N3903 2N3904. 100mA 100MHz 100kHz PNP switching transistor 2N3906 mhz transistor 2N3905 2N3906 NPN Transistor 2N3904 CENTRAL
2001 - transistor 2N3905

Abstract: 2N3905
Text: 2N3905 2N3905 C TO-92 BE PNP General Purpose Amplifier This device is designed for , Semiconductor Corporation Max Units 2N3905 625 5.0 83.3 mW mW/°C °C/W 200 °C/W 2N3905 , Time I B1 = IB2 = 1.0 mA 60 ns *Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0% 2N3905 , BIAS VOLTAGE (V) 10 2N3905 PNP General Purpose Amplifier (continued) Typical , ) 125 150 100 2N3905 PNP General Purpose Amplifier (continued) Typical


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PDF 2N3905 transistor 2N3905 2N3905
2001 - Not Available

Abstract: No abstract text available
Text: 2N3905BU Full Production 2N3905RA Full Production * 1,000 piece Budgetary Pricing $0.05 $0.073 TO-92 TO , 2N3905 2N3905 C BE TO-92 PNP General Purpose Amplifier This device is designed for , Resistance, Junction to Ambient Max 2N3905 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 2001 Fairchild Semiconductor Corporation 2N3905 , Rev A 2N3905 PNP General Purpose Amplifier (continued , % 2N3905 PNP General Purpose Amplifier (continued) Typical Characteristics V CESAT - COLLECTOR


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PDF 2N3905 O-92-3 2N3905
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