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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
JANTXV2N3867S Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN
JAN2N3867 Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN
JAN2N3867S Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN
JANTXV2N3867 Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN
JANS2N3867 Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN
JANTX2N3867S Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN
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Search Stock (19)

  You can filter table by choosing multiple options from dropdownShowing 19 results of 19
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2N3867 Microchip Technology Inc Avnet - $9.69 $8.59
2N3867 Advanced Semiconductor Inc Bristol Electronics 10 $3.58 $2.33
2N3867 Central Semiconductor Corp Avnet - $6.29 $5.49
2N3867 New Jersey Semiconductor Products, Inc. Bristol Electronics 17,463 - -
2N3867JANTX Microchip Technology Inc Avnet - $30.59 $27.39
2N3867S Microchip Technology Inc Avnet - $9.19 $8.19
2N3867SJAN Microchip Technology Inc Avnet - $25.49 $22.79
2N3867SJANTX Microchip Technology Inc Avnet - $30.49 $27.19
2N3867SJANTXV Microchip Technology Inc Avnet - $32.89 $29.39
2N3867U4JAN Microchip Technology Inc Avnet - - -
2N3867U4JANTX Microchip Technology Inc Avnet - - -
2N3867U4JANTXV Microchip Technology Inc Avnet - - -
JANS2N3867S Microchip Technology Inc Avnet - $144.59 $90.39
JANTX2N3867 Microsemi Corporation Future Electronics 350 $35.63 $26.72
JANTX2N3867 Teledyne Relays Bristol Electronics 43 $12.75 $7.97
JANTX2N3867 Microsemi Corporation Chip1Stop 1,568 $32.97 $28.13
JANTX2N3867 Microsemi Corporation New Advantage Corporation 263 $40.82 $40.82
JNTX2N3867 Unknown Bristol Electronics 9 - -
JX2N3867 New England Semiconductor Corporation Bristol Electronics 2 - -

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2N3867 datasheet (62)

Part Manufacturer Description Type PDF
2N3867 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=25min / fT(Hz)=80M / Pwr(W)=1 Original PDF
2N3867 Continental Device India PNP SILICON POWER SWITCHING TRANSISTOR, Designed for High Speed, Medium Current Switching and High Frequency Amplifier Applications, TO-39 Original PDF
2N3867 Microsemi PNP Switching Silicon Transistor Original PDF
2N3867 Microsemi Silicon PNP Power Transistors - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=25min / fT(Hz)=80M / Pwr(W)=1 Original PDF
2N3867 Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=25min / fT(Hz)=80M / Pwr(W)=1 Original PDF
2N3867 API Electronics 5 Amps PNP Transistors Scan PDF
2N3867 API Electronics 5 AMPS PNP Transistors Scan PDF
2N3867 Central Semiconductor PNP METAL CAN Transistors Scan PDF
2N3867 Crimson Semiconductor Transistor Selection Guide Scan PDF
2N3867 Diode Transistor Transistor Short Form Data Scan PDF
2N3867 General Diode Transistor Selection Guide Scan PDF
2N3867 General Transistor Power Transistor Selection Guide Scan PDF
2N3867 Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N3867 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2N3867 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N3867 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N3867 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N3867 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N3867 Others Transistor Shortform Datasheet & Cross References Scan PDF
2N3867 Others Shortform Transistor PDF Datasheet Scan PDF

2N3867 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N3867U4

Abstract: 2N3868S JANTXV 2N3868S 2N3868S JAN 2N3867 2N3867S 2N3868
Text: , SILICON, LOW POWER TYPES 2N3867 , 2N3867S , 2N3867U4 , 2N3868, 2N3868S, AND 2N3868U4, JAN, JANTX, JANTXV , ton 2N3867 2N3868 2N3867 2N3868 2N3867S 2N3868S 2N3867S 2N3968S 2N3867U4 2N3868U4 2N3867U4 , Subgroup 2 2N3867 , 2N3867S , 2N3867U4 2N3868, 2N3868S, 2N3868U4 °C/W ZJX ICBO1 100 100 , , IC = 1.5 A dc, pulsed (see 4.5.1) hFE2 2N3867 , 2N3867S , 2N3867U4 2N3868, 2N3868S, 2N3868U4 Forward-current transfer ratio µA dc hFE1 2N3867 , 2N3867S , 2N3867U4 2N3868, 2N3868S, 2N3868U4


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PDF MIL-PRF-19500/350L MIL-PRF-19500/350K 2N3867, 2N3867S, 2N3867U4, 2N3868, 2N3868S, 2N3868U4, 2N3867U4 2N3868S JANTXV 2N3868S 2N3868S JAN 2N3867 2N3867S 2N3868
1999 - 2N3868

Abstract: 2N3867S 2N3867 2N3868S JTX 2N3867 2N3868S JAN
Text: TECHNICAL DATA 2N3867 JAN, JTX, JTXV 2N3867S JAN, JTX, JTXV 2N3868 JAN, JTX, JTXV 2N3868S JAN , ) Operating & Storage Junction Temperature Range Symbol 2N3867 2N3867S 2N3868 2N3868S Units , , Tstg 0 -65 to +200 Symbol 2N3867 , 2N3868 TO-5 C Max. 17.5 THERMAL , > +250C 2) Derate linearly 57.1 mW/0C for TC > +250C RJC 2N3867S , 2N3868S TO-39 (TO-205AD) Unit , Min. Max. Unit 2N3867 , S 2N3868, S V(BR)CBO 40 60 Vdc 2N3867 , S 2N3868, S V


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PDF 2N3867 2N3867S 2N3868 2N3868S MIL-PRF-19500/350 2N3867 2N3867S 2N3868 2N3868S 2N3867, JTX 2N3867 2N3868S JAN
2002 - 2N3868

Abstract: 2n3867 2N3868S 2N3868S JANTXV 2N3867S 2N3868SJAN
Text: Qualified Level 2N3867 2N3867S JAN JANTX JANTXV 2N3868 2N3868S MAXIMUM RATINGS Ratings , VCBO VEBO IC PT TOP, TSTG 2N3867 2N3867S 2N3868 2N3868S 40 40 60 60 4.0 3.0 1.0 10 -55 to +200 Unit Vdc Vdc Vdc Adc W W 0 C TO-5* 2N3867 , 2N3868 THERMAL , -39* (TO-205AD) 2N3867S , 2N3868S 0 *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit 2N3867 , S


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PDF MIL-PRF-19500/350 2N3867 2N3867S 2N3868 2N3868S 2N3867, 2N3868 2n3867 2N3868S 2N3868S JANTXV 2N3867S 2N3868SJAN
2010 - 2N3868

Abstract: 2N3867 2N3868S 2N3867S ic 353 2N3868S JANTXV 2N3868S JAN TP205AD 2N3868 JANTXV equivalent
Text: per MIL-PRF-19500/350 DEVICES LEVELS 2N3867 2N3868 JAN JANTX JANTXV JANS 2N3867S , Symbol 2N3867 2N3868 Unit Collector-Base Voltage VCBO 40 60 Vdc Collector-Emitter , TO-5 * 2N3867 , 2N3868 Note: * Electrical characteristics for "S" suffix devices are identical to , / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Current 2N3867 , S IC = 10Adc 2N3868, S Collector-Base Cutoff Current VCB = 40Vdc 2N3867 , S VCB = 60Vdc 2N3868, S Emitter-Base


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PDF MIL-PRF-19500/350 2N3867 2N3868 2N3867S 2N3868S T4-LDS-0170 2N3868 2N3867 2N3868S 2N3867S ic 353 2N3868S JANTXV 2N3868S JAN TP205AD 2N3868 JANTXV equivalent
Not Available

Abstract: No abstract text available
Text: per MIL-PRF-19500/350 DEVICES LEVELS 2N3867 2N3868 JAN JANTX JANTXV JANS 2N3867S , Symbol 2N3867 2N3868 Unit Collector-Base Voltage VCBO 40 60 Vdc Collector-Emitter , , Junction-to-Ambient TO-5 * 2N3867 , 2N3868 Note: * Electrical characteristics for “S” suffix devices are , noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Current 2N3867 , S IC = 10μAdc 2N3868, S Collector-Base Cutoff Current VCB = 40Vdc 2N3867 , S VCB = 60Vdc 2N3868


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PDF MIL-PRF-19500/350 2N3867 2N3868 2N3867S 2N3868S T4-LDS-0170
2N6303

Abstract: 2N3868 2N3867 TWFC LC-25 FR90
Text: P P C PRODUCTS CORP EIE D ■bfiSbni 0000003 □ 2N3867 2N3868 2N6303 ^ = M^^^^fmicmfm},. j ^ Power Transistors APPLICATIONS • High-Speed Switching • Medium-Current Switching • High-Frequency Amplifiers FEATURES • Collector-Emitter Sustaining Voltage: VCEO(sus)=40 Vdc (Min) — 2N3867 , €” 2N3867 = 30-150 @ lc= 1.5 Adc — 2N3868, 2N6303 • Low Collector-Emitter Saturation Voltage: VcE(sat , SYMBOL CHARACTERISTIC 2N3867 2N3868 2N6303 UNITS VCEO* Collector-Emitter Voltage 40 60 80 Vdc VCB


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PDF 2N3867 2N3868 2N6303 2N3867 2N3868 2N3868, 300/iS, 2N6303 TWFC LC-25 FR90
2N3720

Abstract: 2n3867
Text: 2N3867.2N3868 , 2N6303 • High Current-Gain — Bandwidth Product — f t = 90 MHz (Typ) • 2N3867 JAN and , , 2N3720 2N3867 , 2N3868 2N6303 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SILICON PNP POWER , LTS 6 WATTS - 2N3719.2N3720 - 2N3867 - 2N3868.2N6303 • Low Collector-Emitter Saturation , | b3b 72 54 DQfl447fi 7 | 2N3719, 2N3720, 2N3867 , 2N3868, 2N6303 , ^ T - 3 7 - / 7 • E , °C) - - Emitter-Base Breakdown Voltage (IE 3 100#iAdc, |q = 0) 40 60 80 - 2N3867


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PDF 2N3719, 2N3720 2N3867, 2N3868 2N6303 2N3719 2N3867 2N3720 2n3867
Not Available

Abstract: No abstract text available
Text: 2N3867. 2N3868 2N6303 3 AMPERE POWER TRANSISTORS PNP SILICON 40.60,80 VOLTS 6 WATTS TELEPHONE: (201) 376-2922 /^ (212)227-6005 ,0fe\: (201) 376-8960 •MAXIMUM RA1riNGS 3N17II 2N3M , 80 2N3867 3N3868 2N6303 CollKtor-But Brtikdown Volugi (1C • 100 M Adc, IE -01 3N3867 , 40 30 25 20 20 2N3867 2N3868. 2N6303 2N3867 2N3868, 2N6303 2N3867 2N3868. 2N6303 2N3867


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PDF 2N3719. 2N3720 2N3867. 2N3868 2N6303 3N17II
2N3867

Abstract: No abstract text available
Text: POWER SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can Package Designed for High Speed, Medium , Page 1 of 4 PNP SILICON POWER SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can Package , Page 2 of 4 2N3867 TO-39 Metal Can Package TO-39 Metal Can Package A DIM A B C D E F , Data Sheet Page 3 of 4 Notes 2N3867 TO-39 Metal Can Package Disclaimer The product , 2N3867Rev060402E Continental Device India Limited Data Sheet Page 4 of 4 Continental Device India


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PDF ISO/TS16949 2N3867 C-120 2N3867Rev060402E 2N3867
Not Available

Abstract: No abstract text available
Text: SILICON POWER SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can Package Designed for High Speed, Medium , Page 1 of 4 PNP SILICON POWER SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can Package ELECTRICAL , 2N3867 TO-39 Metal Can Package TO-39 Metal Can Package A DIM A B C D E F G H J K L , 13.5" 32K 40 kgs Data Sheet Page 3 of 4 Notes 2N3867 TO-39 Metal Can Package , , 5141 1119 email@cdil.com www.cdilsemi.com 2N3867Rev060402E Continental Device India Limited


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PDF 2N3867 C-120 2N3867Rev060402E
2N3867

Abstract: No abstract text available
Text: SILICON POWER SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can Package Designed for High Speed, Medium , Page 1 of 4 PNP SILICON POWER SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can Package , Page 2 of 4 2N3867 TO-39 Metal Can Package TO-39 Metal Can Package A DIM A B C D E F , Data Sheet Page 3 of 4 Notes 2N3867 TO-39 Metal Can Package Disclaimer The product , 2N3867Rev060402E Continental Device India Limited Data Sheet Page 4 of 4 Continental Device India


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PDF 2N3867 C-120 2N3867Rev060402E 2N3867
2002 - Not Available

Abstract: No abstract text available
Text: # QSC/L- 000019.3 PNP SILICON POWER SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can Package , SWITCHING TRANSISTOR 2N3867 TO-39 Metal Can Package ELECTRICAL CHARACTERISTICS (Tc=25º C unless , Sheet Page 2 of 4 2N3867 TO-39 Metal Can Package TO-39 Metal Can Package A B D G 2 1 3 , 48 DEG E K C Page 3 of 4 Notes 2N3867 TO-39 Metal Can Package Disclaimer The , www.cdil.com 2N3867Rev060402E Continental Device India Limited Data Sheet Page 4 of 4


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PDF 2N3867 C-120 2N3867Rev060402E
2013 - Not Available

Abstract: No abstract text available
Text: 2N3867 w w w. c e n t r a l s e m i . c o m SILICON PNP TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3867 is a silicon PNP power transistor designed for high speed switching and amplifier applications. MARKING: FULL PART NUMBER TO-5 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage , V 200 120 1000 35 65 325 75 MHz pF pF ns ns ns ns R0 (8-May 2013) 2N3867


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PDF 2N3867 2N3867 500mA 100mA, 20MHz 100kHz 150mA
1999 - 2N3867

Abstract: No abstract text available
Text: 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3867 APPLICATIONS: · · · High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: · · · · Collector-Emitter Sustaining Voltage: VCEO(sus) = - 40 Vdc , mW/° C 1.0 Watts 5.71 mW/° C 29 175 ° C/W ° C/W 2N3867 ELECTRICAL , Units Vdc Vdc Vdc Vdc Vdc 2N3867 PACKAGE MECHANICAL DATA: 1.500 [38.10] MIN .031 [.787


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PDF 2N3867 MSC1059 2N3867
2N3866

Abstract: CFO20 teledyne 2n3867 2N3868 teledyne fet
Text: TELEDYNE C011P0NENTS 2ÖE D ù ì l T t i Q S GGQbS37 S r-3 -i-i-i I PNP 3 AMP POWER TRANSISTORS GEOMETRY 505 2N3867 2N3868 2N6303 · HIGH SPEED · VCEO(sus) to 80V · HIGH fT MAXIMUM RATINGS PARAMETER Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage DC Collector Current Power Dissipation @Ta < 25°C Linear Derating Factor Power Dissipation @TC<25°C Linear Derating Factor Storage Temperature Lead Temperature (1/16" ± 1/32" from case) Tstg Pd SYMBOL VCEO Vceo V ebo ic Pd 2N3867 40 45 4 3 1


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PDF C011P0NENTS GGQbS37 2N3867 2N3868 2N6303 003-----J Cfo200 2N3866 CFO20 teledyne 2n3867 teledyne fet
Not Available

Abstract: No abstract text available
Text: 2N3867+JANTXV Transistors Si PNP Power BJT Military/High-RelY V(BR)CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)1.0u÷ @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)2.5 @I(B) (A) (Test Condition)250m h(FE) Min. Current gain.40 h(FE) Max. Current gain.200 @I(C) (A) (Test Condition)1.5 @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq60M @I(C) (A) (Test Condition)100m


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PDF 2N3867 Freq60M time60n
transistor 2N3907

Abstract: t018 transistor 2N39Q4 2N3904D 2N3904DCSM 2N3906CSM T071 DUAL TRANSISTOR "Dual PNP Transistor"
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N3790X 2N3791 2N3791 CECC 2N3791-SM 2N3792 2N3792 CECC 2N3792-SM 2N3792LP CECC 2N3799 2N3799X 2N3800 2N3800DCSM 2N3801 2N3801DCSM 2N3802 2N3802DCSM 2N3803 2N3803DCSM 2N3804 2N3804DCSM 2N3805 2N3805A 2N3805ADCSM 2N3805DCSM 2N3806 2N3806DCSM 2N3807 2N3807DCSM 2N3808 2N3808DCSM 2N3809 2N3809DCSM 2N3810 2N381ODCSM 2N3811 2N3811A 2N3811ADCSM 2N3811DCSM 2N3829 2N3830 2N3830L 2N3831 2N3867 2N3867-SM 2N3868 2N3868-SM 2N3879 2N3879SM 2N3902 2N39Q4CSM 2N3904DCSM


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PDF 2N3790X 2N3791 2N3791-SM 2N3792 2N3792-SM 2N3792LP 2N3799 2N3799X transistor 2N3907 t018 transistor 2N39Q4 2N3904D 2N3904DCSM 2N3906CSM T071 DUAL TRANSISTOR "Dual PNP Transistor"
Not Available

Abstract: No abstract text available
Text: 2N3867 Transistors Si PNP Power BJT Military/High-RelN V(BR)CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)1.0u÷ @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)2.5 @I(B) (A) (Test Condition)250m h(FE) Min. Current gain.40 h(FE) Max. Current gain.200 @I(C) (A) (Test Condition)1.5 @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq60M @I(C) (A) (Test Condition)100m @V(CE


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PDF 2N3867 Freq60M time60n
2002 - 2N3867

Abstract: No abstract text available
Text: 2N3867 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021) dia. IC = 1A 5.08 (0.200) typ. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications


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PDF 2N3867 O205AD) 1-Aug-02 2N3867
POWER TRANSISTORS 10A 400v pnp

Abstract: NPN Transistor 10A 400V to3 2N1489 pnp 400v 10a 2N1468 2N6350 2NXXXX 1526a 2N1400 2N6352
Text: 2N3767 YES YES YES /518A 10-A 2N3846 YES YES X /412 11-C 2N3847 YES YES X /412 11-C 2N3867 YES YES YES , 3.0A Package TO-66 TO-66 TO-5 Rated Collector To Emitter Voltage (VCEO) 40V 2N3867 60V 2N3740


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PDF T-33-Ã flES40aa D0D07Ã 19S00 2N389 /173A 2N424 2N1016B /102A POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 2N1489 pnp 400v 10a 2N1468 2N6350 2NXXXX 1526a 2N1400 2N6352
472 M

Abstract: MIL-S-19500 2N3055 JANTX
Text: 2N5665 - JAN, JAN-TX, JAN-TXV 2N5666 - JAN, JAN-TX, JAN-TXV 2N5667 - JAN, JAN-TX. JAN-TXV 2N3867 - JAN


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PDF 2N2812 2N2814 2N2880 2N3749 2N3055 2N3418 2N34I9 2N3420 2N3421 2N3442 472 M MIL-S-19500 2N3055 JANTX
2N3719

Abstract: 2N3867 MOTOROLA 2N3720 2N3868 MOTOROLA
Text: M O T O R O L A SC - C D I O D E S / O P T O 34 DE | k3fcj7555 D D 3 7 ^ a a 0 f ~ 6367255 M OTO ROLA · * )' SC 2N3867 2N3868 2N6303 Designed for high speed, medium-current switching and highfrequency amplifier


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PDF k3fcj7555 PL500 2C3868 2N3719 2N3720 2N3867 2N3868 2N6303 2N3867 MOTOROLA 2N3868 MOTOROLA
Not Available

Abstract: No abstract text available
Text: 2N3867+JAN Transistors Si PNP Power BJT Military/High-RelY V(BR)CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)1.0u÷ @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)2.5 @I(B) (A) (Test Condition)250m h(FE) Min. Current gain.40 h(FE) Max. Current gain.200 @I(C) (A) (Test Condition)1.5 @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq60M @I(C) (A) (Test Condition)100m @V(CE


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PDF 2N3867 Freq60M time60n
741 IC

Abstract: IC 741 to 2N5093 741i 2N5091 2N4930 2N5094 2N5415 2N5149 2N5151
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE DEVICE TYPE VcEO (sus) VOLTS Ic (max) AMPS hFE@ Ic/ VCE (min/max @ AJV) ^CE(sat) @ IC/IB (V @ A/A) p * WATTS fx (MHz) PNP 2N3867 40 3 >25@2.5/3 1.3@2.5/.25 6 60 TO-39 2N3868 60 3 >20@2.5/3 1.3@2.5/.25 6 60 2N4930 200 .05 20-200@.01/10 5@.01/.001 5 10' 2N4931 250 .05 20-200@.01/10 5@.01/.001 5 10' 2N5091 300 1 20-200@.l/15 3@.025/.0025 4 10' 2N5093 350 1 20-200@.l/15 3@.025/.0025 4 10* PNP


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PDF O-39/TO-5 2N3867 2N3868 2N4930 2N4931 2N5091 2N5093 2N5094 2N5096 2N5149 741 IC IC 741 to 741i 2N5415 2N5151
Not Available

Abstract: No abstract text available
Text: 2N3867+JANS Transistors Si PNP Power BJT Military/High-RelY V(BR)CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)1.0u÷ @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)2.5 @I(B) (A) (Test Condition)250m h(FE) Min. Current gain.40 h(FE) Max. Current gain.200 @I(C) (A) (Test Condition)1.5 @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq60M @I(C) (A) (Test Condition)100m @V(CE


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PDF 2N3867 Freq60M time60n
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