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Top Results (5)

Part Manufacturer Description Datasheet Download Buy Part
MSP430-3P-ELPRO-USB-FPA-FET-PGRT Texas Instruments USB-FPA-FET
ISL6146AFUZ-T7A Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146DFUZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146AFRZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C
ISL6146CFUZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C

2N3819 fet Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1995 - 7483 IC

Abstract: ic 7483 pin configuration of IC 7483 ic 7483 pin diagram for IC 7483 applications of IC 7483 7483 IC APPLICATIONS 7483 comparator Datasheet of IC 7483 data sheet ic 7483
Text: 1M-2 2 mF combination The 2N3819 FET biased by the voltage across the 2 2 mF capacitor is used to , Q3-Q5 collector line The LF353 FET amplifier provides gain and buffering Power supply dependence is , two complementary voltages are each gated by the 2N4393 FET switches which are controlled by the , amplitude-stable triangle current into the LF357 FET amplifier The LF357 is used to drive a shaper circuit of the


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2009 - alternative of LM386

Abstract: LM386 FIXED LOW GAIN AUDIO POWER AMPLIFIER 2N3819 NATIONAL SEMICONDUCTOR 2N3810 NATIONAL SEMICONDUCTOR 2n3819 equivalent ic LM3900 VCO pin diagram for IC 7483 sine wave Oscillator jfet circuit IC LM386 12V supply LM386 circuit with capacitors
Text: . The 2N3819 FET , biased by the voltage across the 2.2 F capacitor, is used to control the AC loop gain , by the LC in the Q3-Q5 collector line. The LF353 FET amplifier provides gain and buffering. Power , is inverted by the LF351. The two complementary voltages are each gated by the 2N4393 FET switches , the LF357 FET amplifier. The LF357 is used to drive a shaper circuit of the type shown in Figure 11


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PDF AN-263 alternative of LM386 LM386 FIXED LOW GAIN AUDIO POWER AMPLIFIER 2N3819 NATIONAL SEMICONDUCTOR 2N3810 NATIONAL SEMICONDUCTOR 2n3819 equivalent ic LM3900 VCO pin diagram for IC 7483 sine wave Oscillator jfet circuit IC LM386 12V supply LM386 circuit with capacitors
2002 - ic LM386 wein bridge

Abstract: sine wave crystal controlled oscillator 2N3819 fet lm311 lm386 controlling ic lm311 2n3819 equivalent ic alternative of LM386 Sine Wave Generation Techniques 100 khz crystal LF351 op-amp integrator
Text: 2N3819 FET , biased by the voltage across the 2.2 µF capacitor, is used to control the AC loop gain by , line. The LF353 FET amplifier provides gain and buffering. Power supply dependence is eliminated by , control-loop time constants. two complementary voltages are each gated by the 2N4393 FET switches, which are , counters to produce an amplitude-stable triangle current into the LF357 FET amplifier. The LF357 is used


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2002 - 2N3819

Abstract: 2N3819 Application Note N CHANNEL JFET 2N3819
Text: 2N3819 JFET VHF/UHF Amplifier N–Channel – Depletion MAXIMUM RATINGS http://onsemi.com , 3819 YWW 2N3819 = Device Code Y = Year WW = Work Week ORDERING INFORMATION Device 2N3819 , Shipping TO–92 5000 Units/Box Publication Order Number: 2N3819 /D 2N3819 ELECTRICAL , at 1 kHz. http://onsemi.com 2 2N3819 COMMON SOURCE CHARACTERISTICS 30 20 bis @ IDSS , Figure 4. Output Admittance (yos) http://onsemi.com 3 2N3819 COMMON SOURCE CHARACTERISTICS


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PDF 2N3819 r14525 2N3819/D 2N3819 2N3819 Application Note N CHANNEL JFET 2N3819
2N2926

Abstract: R-067 2N3055 x20a 2N3404 2N3133 2N3227 T018 2N3646 2N3053
Text: 250mW + 30 90-330 1mA Amplifiers 0.10 2N3711 S/NPN X20A ■250mW + 30 1801" 1mA 0.10 2N3819 X20 200mW + 25 'n' channel FET 0.35


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PDF 2N2926 200mW 120mc 120mcl2) 120mct2) 360mW R-067 2N3055 x20a 2N3404 2N3133 2N3227 T018 2N3646 2N3053
2002 - 2n3819

Abstract: 2N3819 Application Note 2N3819 equivalent 2N3819 application 2n3819 datasheet 2N3819 data transistor 2N3819 N CHANNEL JFET 2N3819 J-FET 2N3819 2N 3819
Text: 2N3819 JFET VHF/UHF Amplifier N­Channel ­ Depletion MAXIMUM RATINGS Rating http , 2 GATE 1 SOURCE 1 2 3 TO­92 CASE 29 STYLE 22 MARKING DIAGRAM 2N 3819 YWW 2N3819 = Device Code Y = Year WW = Work Week ORDERING INFORMATION Device 2N3819 © Semiconductor , /Box Publication Order Number: 2N3819 /D 2N3819 ELECTRICAL CHARACTERISTICS (TA = 25°C unless , . http://onsemi.com 2 2N3819 COMMON SOURCE CHARACTERISTICS 30 20 bis @ IDSS 10 7.0 5.0


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PDF 2N3819 r14525 2N3819/D 2n3819 2N3819 Application Note 2N3819 equivalent 2N3819 application 2n3819 datasheet 2N3819 data transistor 2N3819 N CHANNEL JFET 2N3819 J-FET 2N3819 2N 3819
2N2147

Abstract: fet 2n2646 2n2926 2n3055 tos 2N1305 2N1304 npn 2N2926 2N2147 transistor 2N1308 2N1309
Text: 250mW + 30 90-330 1mA Amplifiers 0.10 2N3711 S/NPN X20A ■250mW + 30 1801" 1mA 0.10 2N3819 X20 200mW + 25 'n' channel FET 0.35


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PDF 2N987 100mW lOOmc121 2N1131 600mW 150mA 2N1132 360mW 120mcf2) 2N2147 fet 2n2646 2n2926 2n3055 tos 2N1305 2N1304 npn 2N2926 2N2147 transistor 2N1308 2N1309
2009 - 2N3819 equivalent

Abstract: 2N3819 Application Note 2N3819 application 2N3819 Siliconix JFET 2n3819 datasheet Siliconix N-Channel JFET transistor 2N3819
Text: 2N3819 Vishay Siliconix N-Channel JFET PRODUCT SUMMARY VGS(off) (V) V(BR)GSS Min (V , Sample-and-Hold Very Low Capacitance Switches DESCRIPTION The 2N3819 is a low-cost, all-purpose JFET which , 2N3819 Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Symbol Test , (off) ­ Gate-Source Cutoff Voltage (V) Document Number: 70238 S­04028-Rev. D ,04-Jun-01 2N3819 , ­0.6 ­1.2 ­1.8 ­2.4 ­3 VGS ­ Gate-Source Voltage (V) www.vishay.com 7-3 2N3819


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PDF 2N3819 2N3819 18-Jul-08 2N3819 equivalent 2N3819 Application Note 2N3819 application Siliconix JFET 2n3819 datasheet Siliconix N-Channel JFET transistor 2N3819
2005 - 2N3819 equivalent

Abstract: equivalent for 2N3819 2n3819
Text: 2N3819 Vishay Siliconix N-Channel JFET PRODUCT SUMMARY VGS(off) (V) v ­8 V(BR)GSS Min , DESCRIPTION The 2N3819 is a low-cost, all-purpose JFET which offers good performance at mid-to-high , _C www.vishay.com 7-1 2N3819 Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits , -Jun-01 2N3819 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) 100 nA Gate , 2N3819 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transconductance vs


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PDF 2N3819 2N3819 08-Apr-05 2N3819 equivalent equivalent for 2N3819
2002 - Not Available

Abstract: No abstract text available
Text: 2N3819 2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol VDG Drain-Gate Voltage Parameter Ratings 25 , 2002 2N3819 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47


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PDF 2N3819 450MHz,
2002 - transistor 2N3819

Abstract: 2N3819 2N3819 equivalent 2n3819 transistor 2N3819 fairchild 2n3819 datasheet 2N3819 application N-Channel RF Amplifier
Text: 2N3819 2N3819 N-Channel RF Amplifier · This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. · Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol VDG Drain-Gate Voltage Parameter Ratings 25 , " ©2002 Fairchild Semiconductor Corporation Rev. A1, December 2002 2N3819 Package Dimensions


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PDF 2N3819 450MHz, transistor 2N3819 2N3819 2N3819 equivalent 2n3819 transistor 2N3819 fairchild 2n3819 datasheet 2N3819 application N-Channel RF Amplifier
2002 - Not Available

Abstract: No abstract text available
Text: 2N3819 2N3819 N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50. TO-92 1 1. Drain 2. Gate 3. Source NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol VDG Drain-Gate Voltage Parameter , , October 2002 2N3819 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 Â


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PDF 2N3819 450MHz,
1984 - 306-803

Abstract: 2N3819 application 741 opamp 2N3819 Application Note 2N3819 transistor 2N3819 opamp 741 RS 305-636
Text: effective drain The attenuator will now compress voltages in excess - source resistance of the 2N3819 field , is applied to the gate of the 2N3819 field effect transistor. RS Components Ltd. PO Box 99, Corby


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PDF J2983 100mV 2N3819 306-803 2N3819 application 741 opamp 2N3819 Application Note transistor 2N3819 opamp 741 RS 305-636
TIS69 equivalent

Abstract: 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26
Text: F.E.T . Parameters F.E.T . Formulae . . . . 15 Parameter Measurement 16 F.E.T . Applications 1 6 Linear Application Summary 20 Non-Linear Application Summary 31 F.E.T , Guide (P Channel) Equivalents List . F.E.T . Data Sheets . . 3 5 . 36 The Field Effect Transistor JUNCTIO N F.E.T . CONSTRUCTION ■— N TYPE SILICON « Diffused Planar Silicon Uses , ­ sarily cause catastrophic failure. P TYPE DIFFUSION DRAIN GATE SOURCE TETRODE F.E.T . GATE 1


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PDF 2N5045, 2N5046, 2N5047 TIS69 equivalent 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26
1997 - 306-803

Abstract: 4.7k Preset 741 opamp 2N3819 Application Note 741 op-amp 1M preset 2N3819 application transistor 2N3819 audio compressor rs amplifier 741
Text: effective drain - source resistance of the 2N3819 field effect transistor. The output of the attenuator (A , amplifier (B) is rectified and a negative bias is applied to the gate of the 2N3819 field effect


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PDF 20Vdc 100mV 306-803 4.7k Preset 741 opamp 2N3819 Application Note 741 op-amp 1M preset 2N3819 application transistor 2N3819 audio compressor rs amplifier 741
1995 - 306-803

Abstract: 741 opamp 4.7k Preset 741 op-amp compressor audio use transistor 2N3819 Application Note transistor 2N3819 400V to 6V DC Regulator opamp 741 audio compressor
Text: controlled by the effective drain - source resistance of the 2N3819 field effect transistor. The output of , . The output of amplifier (B) is rectified and a negative bias is applied to the gate of the 2N3819


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PDF 20Vdc 100mV 306-803 741 opamp 4.7k Preset 741 op-amp compressor audio use transistor 2N3819 Application Note transistor 2N3819 400V to 6V DC Regulator opamp 741 audio compressor
MPF111 equivalent

Abstract: 2N3819 MPF111 MPF109 2N5556-58 2N5457-9 2N4223-24 2N4220-2 2N4084-5 2N3921-2
Text: PRINCIPAL DEVICES 2N3821-4, 2N4220-2, 2N4220A-22A 2N4223-24, 2N5556-58 2N3819 , 2N5457-9, MPF109, MPF111 2N3921-2, 2N4084-5, 2N5045-7, U401-6 All of the above except 2N3819 PERFORMANCE CURVES (25°C unless


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1998 - Yamatake R31

Abstract: MST105D DATASHEET YAMATAKE R31 Yamatake, R31 LM709 equivalent 2N3819 junction fet MST-105D Astable Multivibrator operation amplifier 2N3819 NATIONAL SEMICONDUCTOR YAMATAKE R40
Text: output of approximately ± 19V at 16 Hz. This square wave is used to drive junction FET switches in the , current test, the FET drivers, Q8 and Q9, are switched by out of phase signals from Q10 and Q11. This opens the FET switches Q6 and Q7 on alternate half cycles of the square wave output of the function generator. During the offset voltage, offset current test, the FET drivers are operated synchronously from , turning off Q11. R42 and R45 maintain the gates of the FET switches at zero gate to source voltage for


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PDF LM709 LM101 an007190 Yamatake R31 MST105D DATASHEET YAMATAKE R31 Yamatake, R31 LM709 equivalent 2N3819 junction fet MST-105D Astable Multivibrator operation amplifier 2N3819 NATIONAL SEMICONDUCTOR YAMATAKE R40
J-FET 2N3819

Abstract: equivalent for 2N3819 2N3819 2N3819 equivalent 2N4220-2 2N3921-2 2N5457-9 2N5556-58 MPF109 MPF111
Text: , 2N4220A-22A 2N4223-24, 2N5556-58 2N3819 , 2N5457-9, MPF109, MPF111 2N3921-2, 2N4084-5, 2N5045-7, U401-6 All of the above except 2N3819 PERFORMANCE CURVES (25°C unless otherwise noted) Output Characteristic


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PDF 250i2 J-FET 2N3819 equivalent for 2N3819 2N3819 2N3819 equivalent 2N4220-2 2N3921-2 2N5457-9 2N5556-58 MPF109 MPF111
2N3819 ti

Abstract: 2N3819 equivalent 2N4223-24 2N5457-9 2N3822 2N5556-58 MPF111 equivalent 2N4220-2 2N3821-4 2N3821
Text: PRINCIPAL DEVICES 2N3821-4, 2N4220-2, 2N4220A-22A 2N4223-24, 2N5556-58 2N3819 , 2N5457-9, MPF109, MPF111 2N3921-2, 2N4084-5, 2N5045-7, U401-6 All of the above except 2N3819 PERFORMANCE CURVES (25°C unless


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PDF 2N3821 2N3822 2N3819 ti 2N3819 equivalent 2N4223-24 2N5457-9 2N3822 2N5556-58 MPF111 equivalent 2N4220-2 2N3821-4 2N3821
2N3819 equivalent

Abstract: 2N3819 data 2N3819 dual jfet vhf 2N5045-7 2N5045 2N4223-24 2N3921-2 2N4084-5 2N4220-2
Text: Insertion Loss Switches PRINCIPAL DEVICES 2N3821-4, 2N4220-2, 2N4220A-22A 2N4223-24, 2N5556-58 2N3819 , 2N5457-9, MPF109, MPF111 2N3921-2, 2N4084-5, 2N5045-7, U401-6 All of the above except 2N3819 PERFORMANCE


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2N4223-24

Abstract: MPF109 2N4223 2N4084-5 MPF111 2N5556-58 2N5457-9 2N4224 2N4220-2 2N3821-4
Text: 2N3821-4, 2N4220-2, 2N4220A-22A 2N4223-24, 2N5556-58 2N3819 , 2N5457-9, MPF109, MPF111 2N3921-2, 2N4084-5, 2N5045-7, U401-6 All of the above except 2N3819 PERFORMANCE CURVES (25°C unless otherwise noted) Output


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PDF 2N4223 2N4224 2N4223-24 MPF109 2N4223 2N4084-5 MPF111 2N5556-58 2N5457-9 2N4224 2N4220-2 2N3821-4
1995 - function generator circuit schematic diagram full

Abstract: Yamatake R31 MST-105D MST105D Yamatake, R31 2N3819 NATIONAL SEMICONDUCTOR 2N3819 junction fet 2N3819 Application Note Results Astable Multivibrator operation amplifier DATASHEET YAMATAKE R31
Text: FET switches in the test set and to generate the pulse and triangular waveforms The pulse generator , R42 and R45 maintain the gates of the FET switches at zero gate to source voltage for maximum , D5 and D6 The input for the integrator-feedback buffer A7 is selected by the FET switches Q4 and , factor of 1 000 before presenting them to the measurement system FET switches Q4 and Q5 are turned on by switch section S1b during these tests FET switches Q4 and Q5 are turned off during the transfer


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PDF LM709 LM101 function generator circuit schematic diagram full Yamatake R31 MST-105D MST105D Yamatake, R31 2N3819 NATIONAL SEMICONDUCTOR 2N3819 junction fet 2N3819 Application Note Results Astable Multivibrator operation amplifier DATASHEET YAMATAKE R31
BF320

Abstract: fet BF244 FET BF256 bc264 FET 2N5458 FET j303 2N4333 BF244 2N5481 BF244SM
Text: 2N3819 TMPF-3819 (1 6W NJ32 IQ=»HA -25 V0S-15V 20 VOJ^ÖIQ 2nA -80 V^-l^lo-ÎOCia -0.5 -7.5 V0S-W 2 20 , 0.10 0.25 0.46 jIJF 0.065 0.130 L 2'oe I 3.04 1 , 0.89 M=J—-i t. ( FET PINOUTS: 1-Drain, 2 , 00984 0.0472 0,0551 0,0177 0.0236 " 0.0098 ( FET PINOUTS: 1-Drain, 2-Source, 3-Gate) 0.0052 0.1102


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PDF 000D073 TMPFJ308 VOS-10 VGS-10V TMPFJ309 VGS-15V 10lD1nA VOS-10V 0X541 BF320 fet BF244 FET BF256 bc264 FET 2N5458 FET j303 2N4333 BF244 2N5481 BF244SM
2N3819 equivalent

Abstract: MPF111 equivalent MPF109 2N4220-2 equivalent for 2N3819 2N5556-58 2N5558 2N5557 2N4223-24 2N3821-4
Text: , 2N4220-2, 2N4220A-22A 2N4223-24, 2N5556-58 2N3819 , 2N5457-9, MPF109, MPF111 2N3921-2, 2N4084-5, 2N5045-7, U401-6 All of the above except 2N3819 PERFORMANCE CURVES (25°C unless otherwise noted) Output


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PDF 2N5S56 2N5557 2N5558 2N3819 equivalent MPF111 equivalent MPF109 2N4220-2 equivalent for 2N3819 2N5556-58 2N5558 2N5557 2N4223-24 2N3821-4
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