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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2N3799 Central Semiconductor Corp Avnet - $1.39 $1.06
2N3799 Central Semiconductor Corp Future Electronics - $1.37 $1.37
2N3799 Raytheon Bristol Electronics 11 $2.40 $1.80
2N3799 Motorola Semiconductor Products Bristol Electronics 5 $2.40 $2.40
2N3799A Central Semiconductor Corp Avnet - $1.29 $1.19

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2N3799 datasheet (31)

Part Manufacturer Description Type PDF
2N3799 Semelab PNP Low Noise, Amplifier Transistor - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=- / Hfe=250min / fT(Hz)=500M / Pwr(W)=0.36 Original PDF
2N3799 Semico Chip Type 2C2605 Geometry 0220 Polarity NPN - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=- / Hfe=250min / fT(Hz)=500M / Pwr(W)=0.36 Original PDF
2N3799 Advanced Semiconductor Silicon Transistors Scan PDF
2N3799 Central Semiconductor PNP Silicon Transistor, TO-18 Scan PDF
2N3799 Crimson Semiconductor Transistor Selection Guide Scan PDF
2N3799 Micro Electronics Semiconductor Devices Scan PDF
2N3799 Micro Electronics Semiconductor Device Data Book Scan PDF
2N3799 Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N3799 Motorola European Master Selection Guide 1986 Scan PDF
2N3799 Others Transistor Shortform Datasheet & Cross References Scan PDF
2N3799 Others Basic Transistor and Cross Reference Specification Scan PDF
2N3799 Others Shortform Transistor PDF Datasheet Scan PDF
2N3799 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N3799 Others Semiconductor Master Cross Reference Guide Scan PDF
2N3799 Others Shortform Electronic Component Datasheets Scan PDF
2N3799 Others Shortform Transistor Datasheet Guide Scan PDF
2N3799 Others Vintage Transistor Datasheets Scan PDF
2N3799 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N3799 National Semiconductor Shortform National Semiconductor Datasheet Scan PDF
2N3799 National Semiconductor PNP Transistors Scan PDF

2N3799 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N3798

Abstract: 2N3799 2N3799 MOTOROLA 2N3798 MOTOROLA
Text: ~ 5.0 Vdc) (ic = 10 juAdc, Vce = 5.0 vdc) hFE 2N3799 2N3798 2N3799 2N3798 2N3799 2N3798 2N3799 2N3798 2N3799 2N3798 2N3799 2N3798 2N3799 VcE(sat) 75 100 225 150 300 75 150 150 300 150 300 125 250 - - - - , | 2N3798, 2N3799 9~ Symbol Min Typ Max j Unit MHz ELECTRICAL CHARACTERISTICS (continued) (Ta = 25 , ) Voltage Feedback Ratio (IC * 1.0 mAdc, Vce = 10 Vdc, f 2N3798 2N3799 hre = *T 30 100 Cobo Cjbo hfe 3.0 , kHz) hfe 2N3798 2N3799 h0e 150 300 5.0 - - - Small-Signal Current Gain dC = 1.0 mAdc, Vce = 10


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PDF QG0b373 b3b72S4 2N3798, 2N3799 CHARACTERISTICS--2N3798 2N3798 2N3799 2N3799 MOTOROLA 2N3798 MOTOROLA
2004 - 2N3799 MOTOROLA

Abstract: 2N3799
Text: 2N3799 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. = 2N3799 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N3799 at our online store! 2N3799 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N3799 Information Did you Know , Test Houses 2N3799 Specifications Military/High-Rel : N V(BR)CEO (V) : 60 V(BR)CBO (V) : 60 I(C


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PDF 2N3799 2N3799 STV3208 LM3909N 2N3799 MOTOROLA
2N3798

Abstract: 2N3799
Text: Datasheet ^^^ _ _ » _ _ ■tm 2N3798 veilera i 2N3799 Semiconductor Corp. PNP SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 JEDEC TO , 2N3798, 2N3799 types are Silicon PNP Epitaxial Planar Transistors designed for low noise amplifier , CHARACTERISTICS (TA = 25°C unless otherwise noted) 2N3798 2N3799 symbol test conditions min max min max units , 150 150 125 30 3.0 150 5.0 80 4.0 1.5 2.5 450 5.0 15 15 25 600 60 7.0 3.0 2.5 3.5 2N3799 MIN


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PDF 2N3798 2N3799 2N3798, 2N3799 500jtiA 500jtiA, 30MHz 100MHz 100kHz 2N3798
2n390g

Abstract: 2N390G TRANSISTOR TPQ3725 TPQ3724 2N2907 NPN Transistor TPQ6700 2N3799 TPQ6502 2N2906 NPN Transistor 2n2222
Text: €” 0.1 5 60 4.0 250 1.0 2N3798 TPQ3799 60 60 5 10 300 — 0.1 5 60 4.0 250 1.0 2N3799 TPQ3906 40 40 5 , 250 1.0 2N2484/ 2N3799 Two NPN/Two PNP Devices - Figure 4 TPQ650I 60 30 5 30 40 — 150 , 1.0 2N2484/ 2N3799 TPQ6700 40 40 :> 50 /0 — 10 1 200 4.5 250 10 2N3904/2N3906 42


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PDF 14-lead 2N3799 TPQ3906 TPQ6001 2N2221/2N2906 TPQ6002 2N2222/2N2907 TPQ6100 2N2483/2N3798 TPQ6100A 2n390g 2N390G TRANSISTOR TPQ3725 TPQ3724 2N2907 NPN Transistor TPQ6700 2N3799 TPQ6502 2N2906 NPN Transistor 2n2222
2N3799

Abstract: 2N3799 MOTOROLA
Text: Diodes Device Data 2N3799 ELECTRICAL CHARACTERISTICS {continued} (Ta - 25°C unless otherwise noted , Device Data 2N3799 FIGURE 4 - TYPICAL CURRENT GAIN CHARACTERISTICS - 2N3799 NOISE FIGURE (dB


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PDF b3b7254 2N3799 2N3799 2N3799 MOTOROLA
2N3799

Abstract: No abstract text available
Text:  2N3799 SILICON AMPLIFIER TRANSISTORS • High Current Gain • High Frequency PNP AMPLIFIER TRANSISTOR TO-18 T0206AA MAXIMUM RATINGS RATINGS SYMBOL 2N3799 UNITS Collector-Emitter Voltage ^CEO -60 Vdc Collector-Base Voltage VcBO -60 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current — Continuous Ic -50 mAdc Total Power Dissipation @ Tc = 25UC Derate above 25°C Pd « 1-2 6.86 W mW/°C , ) 794-1666 01841 FAX: (978)689-0803 T4-4.8-860-355 REV: - 2N3799 ELECTRICAL CHARACTERISTICS (Tc - 25 C


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PDF 2N3799 T0206AA 2N3799 04ITY
2N3799

Abstract: No abstract text available
Text: 2N3799 * M A XIM U M RATINGS Characteristic C o lle cto r-E m itte r V o ltage Collector-B ase Voltage E m itter-Base V o ltage C o lle ctor C urrent - C o ntinuous Total Device D issipa tion ( 2N3799 ELECTRICAL CHARACTERISTICS (c ontinue d) (Ta = 25°C unless o th e rw is e , , FETs and Diodes Device Data 3-67 2N3799 FIGURE 3 - FREQ UEN CY EFFECTS FIGURE 4 - TYPICAL CURRENT GAIN CHARACTERISTICS - 2N3799 rmiirTT100 10 R s = 30 Wl R s = 100 kil 10 (dB) m K Rg


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PDF 2N3799* O-206AA) 2N3799 rmiirTT100 2N3799
itt 3906

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 741CE 2N3799 MOTOROLA TRANSISTOR REPLACEMENT GUIDE itt 2n2222
Text: €” 0.1 5 60 4.0 250 1.0 2N3798 TPQ3799 60 60 5 10 300 — 0.1 5 60 4.0 250 1.0 2N3799 TPQ3906 40 40 5 , 250 1.0 2N2484/ 2N3799 Two NPN/Two PNP Devices - Figure 4 TPQ650I 60 30 5 30 40 — 150 , 1.0 2N2484/ 2N3799 TPQ6700 40 40 :> 50 /0 — 10 1 200 4.5 250 10 2N3904/2N3906 42 INTEGRATED


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PDF 14-lead MC1439G MC1439P1 MC1741CG MC1741CP1 MC3003 MC3491P* MC7437L MC7438L MC75451P itt 3906 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 741CE 2N3799 MOTOROLA TRANSISTOR REPLACEMENT GUIDE itt 2n2222
1999 - 2n3810

Abstract: 2N3799 2N3811 2N2605 2N3789 2N3798 2n3810 datasheet 2C2605 2N2604
Text: Data Sheet No. 2C2605 Generic Packaged Parts: Chip Type 2C2605 Geometry 0220 Polarity NPN 2N2604, 2N2605, 2N3798, 2N3799 , 2N3810, 2N3811 Chip type 2C2605 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high speed switching applications. Part Numbers: Features: · High speed switching capabilities 2N2604, 2N2605, 2N3789, 2N3799 , 2N3810, 2N3811 Mechanical Specifications Metallization Bonding Pad Size Top Backside


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PDF 2C2605 2N2604, 2N2605, 2N3798, 2N3799, 2N3810, 2N3811 2C2605 2n3810 2N3799 2N3811 2N2605 2N3789 2N3798 2n3810 datasheet 2N2604
2000 - TRANSISTOR 3kw

Abstract: 2N3799
Text: SEME 2N3799 LAB MECHANICAL DATA Dimensions in mm (inches) PNP LOW NOISE , AMPLIFIER TRANSISTOR 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES · SILICON PLANAR EPITAXIAL PNP TRANSISTOR · CECC SCREENING OPTIONS · LOW NOISE AMPLIFIER 2.54 (0.100) Nom. APPLICATIONS: 3 1 , / °C ­65 to +200°C 0.49°C/mW 0.15°C/mW Prelim. 4/95 SEME 2N3799 LAB ELECTRICAL


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PDF 2N3799 100Hz 300ms, 100mA 200Hz 10kHz TRANSISTOR 3kw 2N3799
4266T

Abstract: No abstract text available
Text: TYP ES 2N3798, 2N3799 P -N -P SILIC ON TR A N S IS TO R S B U L L E T IN N O . D L-S 7 3 9 8 9 8 , M A R C H 1 9 6 7 - R E V IS E D M ARCH 1973 F O R L O W - L E V E L , L O W -N O IS E , H I G H , , 2N3799 P -N -P S ILIC O N TR A N S IS TO R S 'electrical characteristics at 25°C free-air temperature , 2N3798 MIN MAX -4 0 -6 0 -5 -1 0 2N3799 MIN MAX -6 0 -6 0 -5 -1 0 -1 0 -2 0 75 UNIT V V V nA f , kü , 10 0 H z , -1 0 Noise B a n d w id th = 20 H z 2N3798 MAX 7 3 2N3799 M AX 4 UNIT dB


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PDF 2N3798, 2N3799 4266T
2N3799

Abstract: No abstract text available
Text: 2N3799 * MAXIM UM RATINGS Characteristic C o lle c to r -E m itte r V o lta g e C o lle c to r-B a s e V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t - C o n tin u o u s T o , SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 3-79 2N3799 ELECTRICAL CHARACTERISTICS SMALL-SIGNAL , RESISTANCE EFFECTS, f = 10 Hz M OTOROLA SMALL-SIGNAL TRAN SISTO R S, FETs AND DIODES 2N3799 F IG U , 2N3799 NOISE FIGURE (d B ) 1.0 k 10 h 100 k f. FR E Q U E N C Y (H z ) lc . C O LL E C


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PDF 2N3799* T0-206AA) 2N3799 2N3799
Not Available

Abstract: No abstract text available
Text: S EM E 2N3799 LA B MECHANICAL DATA Dimensions in mm (inches) PNP LOW NOISE , AMPLIFIER TRANSISTOR 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR • CECC SCREENING OPTIONS • LOW NOISE AMPLIFIER 2.54 (0.100) Nom , 0.49°C/mW 0.15°C/mW Prelim. 4/95 S EM E 2N3799 LA B ELECTRICAL CHARACTERISTICS (TA = 25Â


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PDF 2N3799 300ms, 100mA 200Hz 10kHz
2004 - 2n222a

Abstract: 2n222a datasheet 2n222a npn 2n3762 MPQ6700 2X PNP 2N2907 equivalent MPQ3762 2N2222 pnp MPQ7053
Text: 250 10 0.25 1.0 4.0 60 1.5 - 4X 2N3799 B MPQ3904 NPN AMPL/SWITCH , 2N3799 C MPQ6502 NPN/PNP AMPL/SWITCH 60 30 5.0 30 50 30 300 0.40 150


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PDF O-116 MPQ2222 2N2222 MPQ2222A 2N222A MPQ2369 2N2907 MPQ6700 2N3904 2n222a 2n222a datasheet 2n222a npn 2n3762 MPQ6700 2X PNP 2N2907 equivalent MPQ3762 2N2222 pnp MPQ7053
2n2222 2n5401 2n5551

Abstract: TPQ6700 TPQ5400 TPQ6502 TPQA05 TPQ2906A 2N2907 NPN Transistor TPQ2221A TPQ2221 TPQ3724
Text: 0.1 1.0 60 1.0 4.0 2N3799 TPQ3906 -40 -40 -5.0 50 -30 40 60 75 0.1 -1.0 1.0 -1.0 10 -1.0 -0.25 -0.85 , 0.1 5.0 0.5 5.0 1.0 5.0 10 5.0 0.25 0.80 1.0 100 0.5 4.0 2N2484 and 2N3799 NOTESr 1. C. 2. fcts at , 5.0 10 5.0 0.25 0.80 1.0 100 0.5 4.0 2N24.Ì4 and 2N3799 TPQ6700 40 40 5.0 50 30 30 50 70 0.1 1.0 1.0


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PDF 14-pin 2N2222 2N2907 TPQ6600 2N2483 2N3738 TPQ6600A 2N3799 TPQ6700 2N3904 2n2222 2n5401 2n5551 TPQ5400 TPQ6502 TPQA05 TPQ2906A 2N2907 NPN Transistor TPQ2221A TPQ2221 TPQ3724
tpq2907

Abstract: No abstract text available
Text: . 5— 7 8.0 4.5 2N2907 2N3799 2N3906 I ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 , 2N2222 and 2N2907 0.5 4.0 2N2483 and 2N3798 0.5 4.0 2N2484 and 2N3799 ALLEGRO , 0.25 0.80 1.0 100 0.5 4.0 2N24.I4 and 2N3799 0.1 30 1.0 10 1.0 1.0 1.0


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PDF 05G433Ã 14-pin TPQ7051 TPQ6700 TPQ6600A TPQ6600 TPQ6502 2N3904 2N3906 tpq2907
TZ554

Abstract: 2n2907 pnp bipolar transistor TZ552 2N4258 TZ554 transistor TZ-81 sprague catalog TZ-82 2N2907 PNP Transistor to 92 transistor 2N4258
Text: 60 — -1 2N3799 TPQ3904 1 NPN 60 40 6 50 40 30 — 0.1 1 50—1 1 75—10 1 0.20 — 0.85 10 4 250 , 5 150 — 1 5 60—10 5 0.25 — 0.8 1.0 4 100 — 0.5 2N2484 and 2N3799 TPQ6501 4 (Note 1) 60 30 , €” 0.8 1.0 4 100 — 0.5 2N2484 and 2N3799 TPQ6700 4 (Note 1) 40 40 5 50 30 30 — 0.1 1 50 — 1 1


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PDF TPP1000 TPP2000 TZ554 TZ581 TZ582 2n2907 pnp bipolar transistor TZ552 2N4258 TZ554 transistor TZ-81 sprague catalog TZ-82 2N2907 PNP Transistor to 92 transistor 2N4258
Not Available

Abstract: No abstract text available
Text: 2N2907 2N3799 2N3906 I S P R A G U E / S EM I C O N D 8 5 1 4 0 1 9 S P RA GU E, GROUP , 4.0 2N2483 and 2N3798 1.0 1.0 100 0.5 4.0 MPSA55 2N2484 and 2N3799 â , 1.0 10 5.0 5.0 5.0 5.0 0.25 0.80 1.0 100 0.5 4.0 2N24.S4 and 2N3799


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PDF fiS13Ã 14-pin 0-050A TPQ2221 TPQ2221A 2N3799 TPQ6600A TPQ6700 TPQ7051 TPQ7052
2N2605

Abstract: 2N3799 CMPT5086 CMPT5087 CP588 PN4250A
Text: PROCESS CP588 Small Signal Transistors PNP - Low Noise Amplifier Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 15 x 15 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 53,730 PRINCIPAL DEVICE TYPES 2N2605 2N3799 PN4250A CMPT5086 CMPT5087 BACKSIDE COLLECTOR


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PDF CP588 2N2605 2N3799 PN4250A CMPT5086 CMPT5087 2N2605 2N3799 CMPT5086 CMPT5087 CP588 PN4250A
Not Available

Abstract: No abstract text available
Text: 2N3799 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)50m Absolute Max. Power Diss. (W)360m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A).01uØ @V(CBO) (V) (Test Condition) h(FE) Max. Current gain. @I(C) (A) (Test Condition)10m @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq500M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) Power Gain Min. (dB) @I(C) (A) (Test Condition


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PDF 2N3799 Freq500M
Not Available

Abstract: No abstract text available
Text: D a ta S h e e t N o. 2 C 2 6 0 5 Is L SEMICONDUCTORS Chip Type 2C2605 G e n e ric P a c k a g e d P arts: Geometry 0220 Polarity NPN 2N 26 0 4 , 2N 2 6 0 5 , 2N 3 7 9 8 , 2N 3 7 9 9 , 2 N 3 8 1 0, 2 N 3 8 1 1 1 8 M IL S - Chip type 2C2605 by Semicoa Semi­ conductors provides performance similar to these devices. Product Summary: Designed speed switching applications. APPLICATIONS: for high Part Numbers: 2N2604, 2N2605, 2N3789, 2N3799 , 2N3810, 2N3811 Features: â


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PDF 2C2605 2C2605 2N2604, 2N2605, 2N3789, 2N3799, 2N3810, 2N3811
2N2605

Abstract: 2N3799 CMPT5086 CMPT5087 CP588 PN4250A
Text: PROCESS CP588 Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 15 x 15 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 53,730 PRINCIPAL DEVICE TYPES 2N2605 2N3799 PN4250A CMPT5086 CMPT5087 BACKSIDE COLLECTOR 145


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PDF CP588 2N2605 2N3799 PN4250A CMPT5086 CMPT5087 21-August 631tor 2N2605 2N3799 CMPT5086 CMPT5087 CP588 PN4250A
2002 - 2N2605

Abstract: 2N3799 CMPT5086 CMPT5087 CP588 PN4250A
Text: PROCESS CP588 Central Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip TM Semiconductor Corp. PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 15 x 15 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 53,730 PRINCIPAL DEVICE TYPES 2N2605 2N3799 PN4250A CMPT5086


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PDF CP588 2N2605 2N3799 PN4250A CMPT5086 CMPT5087 2N2605 2N3799 CMPT5086 CMPT5087 CP588 PN4250A
TO-18 amps pnp transistor

Abstract: BC107 BC108
Text: NEW ENGLAND SEMICONDUCTOR PNP TRANSISTOR TO-18 PACKAGE TO-18 T0206AA SMALL SIGNAL V ceo (sus) VOLTS 40 60 40 60 60 60 80 120 60 60 60 80 45 60 60 80 60 80 200 300 45 25 25 18 Ic 1>FE @ V V c e V cE (M t) DEVICE TYPE 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 2N4026 2N4027 2N4028 2N4029 2N6432 2N6433 BC107 BC108 BC109 2N869A (max) AMPS 0.6 0.6 0.6 0.6 0.2 0.2 0.1 0.1 0.05 0.05 0.2 0.2 0.2 0.2 1.0 1.0 1.0 1.0 0.5 0.5 0.2 0.2 0.2 0.2


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PDF T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 TO-18 amps pnp transistor BC107 BC108
SILICON SMALL-SIGNAL DICE

Abstract: opto transistor 2N2605 SILICON DICE motorola
Text: MOTOROLA SC -CDIODES/OPTO} ~34 D E ^ L,3b7S5S DD37TÌ1 ? ¡ 6367255 MOTOROLA SC 2N3799 2N3962 2N3963 2N3964 2N3965 2N4359 MMCM3798 MMCM3799 MMT3798 MMT3799 2C3799 - Designed for low-level, low-noise amplifier applications. METALLIZATION - Top


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PDF DD37T DSL555 2N2604 2N2605 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 SILICON SMALL-SIGNAL DICE opto transistor SILICON DICE motorola
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