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2n3772

Abstract: 2N3771 motorola 2n3771 LB2T 2N3771 power circuit
Text: switching applications . · Forward Biased Second Breakdown Current Capability lQ/b = 3.75 Adc @ V q e = 40 Vdc - 2N3771 = 2.5 Adc @ V q e = 60 Vdc - 2N3772 2N 3771* 2N 3772 'Motorola Preferred Device , CEO VCEX VCB V EB 2N3771 40 50 50 5.0 30 30 7.5 15 150 0.855 2N3772 60 80 100 7.0 20 30 5.0 15 , , Junction to Case Symbol 0 jc 2N3771, 2N3772 1.17 Unit °C/W * Indicates JEDEC Registered Data , 2N3772 ELECTRICAL CHARACTERISTICS (T q = 25°C unless otherwise noted) Characteristic OFF


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PDF 2N3771/D 2N3771 2N3772 2n3772 2N3771 motorola 2n3771 LB2T 2N3771 power circuit
2006 - 2N3771

Abstract: 2N3772G 2N3772 1N5825 2N3771G 2N6257 MSD6100 2N3771 power transistor
Text: 2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications , @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 Pb-Free Packages are Available* 20 , 2N3772 Unit Collector-Emitter Voltage Rating VCEO 40 60 Vdc Collector-Emitter , Country of Origin ORDERING INFORMATION Device 2N3771 2N3771G 2N3772 2N3772G Package Shipping


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PDF 2N3771, 2N3772 2N3771 2N3771 2N3771/D 2N3772G 2N3772 1N5825 2N3771G 2N6257 MSD6100 2N3771 power transistor
2006 - 2N3771

Abstract: 2N3771 power circuit 2N3772 transistor 2N3771 1N5825 2N6257 MSD6100 2N3771 power transistor Power Transistor 2N3771
Text: ON Semiconductort 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed for linear amplifiers, series pass regulators, and inductive switching applications . *ON , = 2.5 Adc @ VCE = 60 Vdc - 2N3772 These devices are available in Pb-free package(s). , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS Rating Symbol 2N3771 2N3772 Unit , , 2N3772 Unit Thermal Resistance, Junction to Case JC 1.17 _C/W Operating and Storage


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PDF 2N3771* 2N3772 2N3771 2N3771/D 2N3771 2N3771 power circuit 2N3772 transistor 2N3771 1N5825 2N6257 MSD6100 2N3771 power transistor Power Transistor 2N3771
2001 - 1N5825

Abstract: 2N3771 2N3772 2N6257 MSD6100
Text: ON Semiconductort 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed for linear amplifiers, series pass regulators, and inductive switching applications . *ON , = 2.5 Adc @ VCE = 60 Vdc - 2N3772 ÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , Symbol 2N3771 2N3772 Unit Collector­Emitter Voltage VCEO 40 60 Vdc , Symbol 2N3771, 2N3772 Unit JC 1.17 _C/W Operating and Storage Junction Temperature


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PDF 2N3771* 2N3772 2N3771 r14525 2N3771/D 1N5825 2N3771 2N3772 2N6257 MSD6100
1997 - 2N3772

Abstract: 2N3771
Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications . 1 2 TO , CEO Collector-Emitter Voltage (I E = 0) 2N3772 40 60 V V CEV Collector-Emitter , o C 1/4 2N3771/ 2N3772 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case


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PDF 2N3771 2N3772 2N3771, 2N3772 2N3771
1995 - 2N3771

Abstract: 2N3772 P003N
Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications . 1 2 TO , 2N3772 60 V V CEO Collector-Base Voltage (I E = 0) 40 V CEV Collector-Emitter Voltage , 2N3771/ 2N3772 THERMAL DATA R thj -ca se Thermal Resistance Junction-case Max o 1.17 C/W


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PDF 2N3771 2N3772 2N3771, 2N3772 2N3771 P003N
1995 - 2N3772 motorola

Abstract: 2N3771 1N5825 2N3772 2N6257 MSD6100 motorola 2n3771
Text: . Symbol 2N3771 2N3772 Unit Collector­Emitter Voltage VCEO 40 60 Vdc , _C Symbol 2N3771, 2N3772 Unit JC 1.17 _C/W Thermal Resistance, Junction to Case , 3.75 Adc @ VCE = 40 Vdc - 2N3771 IS/b = 2.5 Adc @ VCE = 60 Vdc - 2N3772 20 and 30 AMPERE POWER , regulators, and inductive switching applications . High Power NPN Silicon Power Transistors *Motorola Preferred Device 2N3771* 2N3772 SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3771/D


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PDF 2N3771/D* 2N3771/D 2N3772 motorola 2N3771 1N5825 2N3772 2N6257 MSD6100 motorola 2n3771
2006 - Not Available

Abstract: No abstract text available
Text: 2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications , Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772 Pb−Free Packages are Available , Ž MAXIMUM RATINGS (Note 1) Symbol 2N3771 2N3772 Unit Collector−Emitter Voltage Rating , INFORMATION Device 2N3771 2N3771G 2N3772 2N3772G Package Shipping TO−204 100 Units / Tray


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PDF 2N3771, 2N3772 2N3771 2N3771 2N3771/D
1997 - 2N3772

Abstract: 2N3771 2N3772 APPLICATIONS 2N3771 canada 20A40
Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications . 1 2 TO , 2N3772 60 V V V CEO Collector-Emitter Voltage (I E = 0) 40 V CEV Collector-Emitter , / 2N3772 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1.17 C/W


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PDF 2N3771 2N3772 2N3771, 2N3772 2N3771 2N3772 APPLICATIONS 2N3771 canada 20A40
diode cc 3053

Abstract: 2n3772 EQUIVALENT 2N3771 1N1186A 2N3772 2n3771 equivalent 2N3772 JAN
Text: , SILICON, HIGH-POWER, TYPES 2N3771 AND 2N3772 , JAN, JANTX, AND JANTXV This specification is approved for , for use in high-speed power-switching applications . Three levels of product assurance are provided , +200 -65 to +200 6 150 2N3771 1.17 29.2 6 150 2N3772 1.17 29.2 (1) Derate linearly 34.2 , characteristics. Type hFE2 at VCE = 4 V dc IC = 15 A dc Max Min 2N3771 15 60 2N3772 (1) Pulsed (see , = 1 A dc f = 100 kHz IE = 0 100 kHz f 1 MHz 2N3771 2N3772 Limits s Min Max 6


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PDF MIL-PRF-19500/413F MIL-PRF-19500/413E 2N3771 2N3772, MIL-PRF-19500. diode cc 3053 2n3772 EQUIVALENT 1N1186A 2N3772 2n3771 equivalent 2N3772 JAN
2000 - 2N3771

Abstract: 2N3772 2N3771 power circuit 2N3772 APPLICATIONS
Text: 2N3771 2N3772 ® HIGH POWER NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications , Unit 2N3771 2N3772 60 V V CEO Collector-Emitter Voltage (I E = 0) 40 V CEV , T stg December 2000 150 -65 to 200 W o C 1/4 2N3771/ 2N3772 THERMAL DATA R


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PDF 2N3771 2N3772 2N3771, 2N3772 2N3771 2N3771 power circuit 2N3772 APPLICATIONS
2000 - 2N3772

Abstract: 2N3771
Text: 2N3771 2N3772 ® HIGH POWER NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications , Uni t 2N3771 V CEO Collector-Emitter Voltage (IE = 0) 2N3772 40 60 V V CEV , December 2000 150 -65 to 200 A W o C 1/4 2N3771/ 2N3772 THERMAL DATA R t hj-ca se


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PDF 2N3771 2N3772 2N3771, 2N3772 2N3771
2000 - Not Available

Abstract: No abstract text available
Text: 2N3771 2N3772 ® HIGH POWER NPN SILICON TRANSISTOR I STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications , Unit 2N3771 V CEO 2N3772 Collector-Emitter Voltage (I E = 0) 40 60 V V CEV , Temperature December 2000 150 -65 to 200 W o C 1/4 2N3771/ 2N3772 THERMAL DATA R thj-case


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PDF 2N3771 2N3772 2N3771, 2N3772
2008 - 2N3772

Abstract: 1N5825 MSD6100 2N3772 APPLICATIONS
Text: amplifiers, series pass regulators, and inductive switching applications . Features: · · (TO , .1 1165892 Maximum Ratings (Note 1) Rating Symbol 2N3772 Collector-Emitter Voltage VCEO , Collector-Emitter Sustaining Voltage (Note 2 and 3) (lC = 0.2 A dc, lB = 0) 2N3772 VEO (sus) 60 - Collector-Emitter Sustaining Voltage (IC = 0.2A dc, VEB (off) = 1.5 V dc, RBE = 100) 2N3772 VCEX (sus) 80 - Collector-Emitter Sustaining Voltage (IC = 0.2A dc, RBE = 100) 2N3772 VCER (sus) 70


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2N3771G

Abstract: 2N3771 2N3772 2N3772G 2N6257
Text: 2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications , 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 Pb-Free Packages are Available* 20 and 30 AMPERE POWER , Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (Note 1) Symbol 2N3771 2N3772 Unit , 2N3771 2N3771G 2N3772 2N3772G Package Shipping TO-204 100 Units / Tray TO-204 (Pb-Free


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PDF 2N3771, 2N3772 2N3771 2N3771 O-204AA 2N3771G 2N3772 2N3772G 2N6257
diode cc 3053

Abstract: cc 3053 2n3771 equivalent cc 3053 diode 2N3771 equivalent transistor 2n3772 EQUIVALENT 2n3771 2N3772 K 3053 TRANSISTOR MIL-PRF19500
Text: , HIGH-POWER TYPES 2N3771 AND 2N3772 , JAN, JANTX, AND JANTXV This specification is approved for use by all , applications . Three levels of product assurance are provided for each device type as specified in MIL-PRF , 20 -65 to +200 -65 to +200 2N3771 2N3772 1/ Derate linearly 34.2 mW/C for TA > +25C. 2 , VCE(SAT) IC = 15 A dc Min 2N3771 2N3772 IC = 10 A dc Max Min Max 5 60 15 1 , 0 100 kHz < f < 1 MHz 2N3771 2N3772 s Min Max 6 30 1,200 pF s s s 10


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PDF MIL-PRF-19500/413C MIL-S-19500/413B 2N3771 2N3772, MIL-PRF-19500. diode cc 3053 cc 3053 2n3771 equivalent cc 3053 diode 2N3771 equivalent transistor 2n3772 EQUIVALENT 2N3772 K 3053 TRANSISTOR MIL-PRF19500
2004 - high power transistor

Abstract: transistor 7333 Transistor 358 to3 2N3772 transistor 928 2N3772 APPLICATIONS transistor 358 to-3 358 transistor 2N3772A
Text: 2N3772 High Power Transistor High power NPN silicon power transistor. General-Purpose linear amplifier, series pass regulators and inductive switching applications . Features: · Low , Maximum NPN 2N3772 A 38.75 39.96 20 Ampere B 19.28 22.23 NPN Silicon Power , A 31/05/05 V1.0 2N3772 High Power Transistor Thermal Characteristics Characteristic , : Pulse Width = 300µs, Duty Cycle 2.0%. (2) fT = hfe · ftest. Page 2 31/05/05 V1.0 2N3772 High


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PDF 2N3772 high power transistor transistor 7333 Transistor 358 to3 2N3772 transistor 928 2N3772 APPLICATIONS transistor 358 to-3 358 transistor 2N3772A
2N3772 motorola

Abstract: 2N6257 200iC MJ3771 MOTOROLA MJ3771 W630 MJ3772 2N3771 2N3772 lj377
Text: applications . ­ = 1.0 Vdc (Max) @ IC = 15 Adc - ~lJ3771 @ IC = 10Adc = 0.7 Vdc (Idax) @ IC = , regulators applications . i3reakdowrr (@ \/CE = Current Capability 40 Vdc ­ 2N3771 2.5 Adc (2 \~CE = 60 Vdc ­ 2N3772 = 3.75 ) @I Ic= switching lS/b = 3.75 = - MJ6257 (:M , ing Voltage Adc, RBE = 1000hms) `CEX(SUS) VCER(S"~) 2N3771 2N3772 = 1.5 Vdc, Vdc , lB=O) MJ3771 2N3772 (f C=0.2AdC, 2N3772 2N6257 COl Iector Cutoff Current ,Ltu


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PDF lJ3771 10Adc M305300 MSO61OO 2N3771, 2N3772, 2N6257 MJ3771 48w-2 MJ6257 2N3772 motorola 2N6257 200iC MJ3771 MOTOROLA MJ3771 W630 MJ3772 2N3771 2N3772 lj377
2004 - Not Available

Abstract: No abstract text available
Text: Submit ¡ ¡ 2N3772 Availability Buy 2N3772 at our online store ! 2N3772 Information Cate , 2N3772 Specifications Milita ry/High-R e l : N V(BR )C EO (V) : 60 V(BR )C BO (V) : 100 I(C ) Max . (A , for yo ur spe cial applications , but with our outsta nding ne twork of industry partne rs, we can


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PDF 2N3772
2N3772

Abstract: 2N3771 r33v
Text: , 2N3772 N-P-N SILICON POWER TRANSISTORS DECEMBER 1971 - REVISED OCTOBER 1984 150 W at 25°C Case Temperature 30 A Continuous Collector Current (2N3771) 20 A Continuous Collector Current ( 2N3772 ) 30 A Peak Collector Current Designed for Untuned Power-Amplifier Applications 7"-33-/3 device schematic to , 25°C case temperature (unless otherwise noted) 2N3771 2N3772 "Collector-base voltage 50 V 100V , pulse of any duration for the 2N3771,orof 500 ms maximum duration for the 2N3772 . 2. Derate linearly to


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PDF gd3bs77 S9S1726 2N3771 2N3772 2N3771) 2N3772) 2N3772 flTbl72t: 003bS7< r33v
2012 - 2N3772

Abstract: 2N3772G
Text: UNISONIC TECHNOLOGIES CO., LTD 2N3772 SILICON NPN TRANSISTORS DESCRIPTION SILICON NPN TRANSISTOR The UTC 2N3772 is a silicon power transistor in TO-3 metal case. It is designed for linear amplifiers, series pass regulators, and inductive switching applications . 1 TO-3 ORDERING INFORMATION , -002,Ba 2N3772 SILICON NPN TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25, unless otherwise , TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R205-002,Ba 2N3772 SILICON NPN TRANSISTOR


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PDF 2N3772 2N3772 2N3772L-T30-Y 2N3772G-T30-Y QW-R205-002 2N3772G
2012 - Not Available

Abstract: No abstract text available
Text: UNISO TE NIC CHNO G SCO LTD LO IE ., 2N3772 SILICON NPN TRANSISTOR SI LI CON N PN T RAN SI ST ORS ̈ DESCRI PT I ON The UTC 2N3772 is a silicon power transistor in TO-3 metal case. It is designed for linear amplifiers, series pass regulators, and inductive switching applications , -3 Pin Assignment 1 2 3 B E C Packing Tray 1 of 3 QW-R205-002,Ba 2N3772 ̈ SILICON , 40 MHz 2 of 3 QW-R205-002,Ba 2N3772 SILICON NPN TRANSISTOR UTC assumes no


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PDF 2N3772 2N3772 2N3772L-T30-Y 2N3772G-T30-Y QW-R205-002
2002 - transistor 2n3772

Abstract: No abstract text available
Text: # QSC/L- 000019.2 NPN SILICON PLANAR POWER TRANSISTOR 2N3772 TO-3 Metal Can Package Designed for Linear Amplifiers, Series Pass Regulators, and Inductive Switching Applications . ABSOLUTE MAXIMUM , of 4 NPN SILICON PLANAR POWER TRANSISTOR 2N3772 TO-3 Metal Can Package ELECTRICAL , Rate 60 cps. Continental Device India Limited Data Sheet Page 2 of 4 2N3772 TO-3 Metal Can , of 4 Notes 2N3772 TO-3 Metal Can Package Disclaimer The product information and the


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PDF 2N3772 C-120 2N3772Rev080202E transistor 2n3772
3771

Abstract: ot 409 transistor 2N3771 2N 3771
Text: SGS-THOMSON Kl(gKLiM(s)!0(gS 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in , applications . 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Sym bol Pa ra m e ter 2N , 1- e o T, Ui °c 1/4 2N3771/ 2N3772 THERMAL DATA Rihj-case T h e rm a l R e s is ta , ^ 7# ftoaetigmiemroiies / r r sGS-m0MS0N 2N3771/ 2N3772 TO-3 MECHANICAL DATA mm in c h


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PDF 2N3771 2N3772 2N3771, 2N3772 3771 ot 409 transistor 2N3771 2N 3771
vcb 60 veb 4 ic 10a metal can

Abstract: 2N3772 transistor 2n3772
Text: 2N3772 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Designed for Linear Amplifiers, Series Pass Regulators, and Inductive Switching Applications . ABSOLUTE MAXIMUM RATINGS , NPN SILICON PLANAR POWER TRANSISTOR 2N3772 TO-3 Metal Can Package ELECTRICAL CHARACTERISTICS (TC , , Repetitive Rate 60 cps. µ Continental Device India Limited Data Sheet Page 2 of 4 2N3772 TO , Data Sheet Page 3 of 4 2N3772 Notes TO-3 Metal Can Package Disclaimer The product


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PDF 2N3772 C-120 2N3772Rev080202E vcb 60 veb 4 ic 10a metal can 2N3772 transistor 2n3772
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