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Part Manufacturer Description Datasheet Download Buy Part
LTC694IS-3.3 Linear Technology IC 2-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8, PLASTIC, SOIC-8, Power Management Circuit
LTC694CS-3.3 Linear Technology IC 2-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8, PLASTIC, SOIC-8, Power Management Circuit
LTC4416IMS#TR Linear Technology IC 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO10, PLASTIC, MSOP-10, Power Management Circuit
LTC2990IMS#TR Linear Technology IC 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO10, PLASTIC, MSOP-10, Power Management Circuit
LTC6104HMS8#TR Linear Technology IC 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8, PLASTIC, MSOP-8, Power Management Circuit
LTC2913HMS-1 Linear Technology IC 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO10, PLASTIC, MSOP-10, Power Management Circuit

2N3771 power circuit Datasheets Context Search

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2n3772

Abstract: 2N3771 motorola 2n3771 LB2T 2N3771 power circuit
Text: 3.75 2.5 Adc _ - 2 Motorola Bipolar Power Transistor Device Data 2N3771 2N3772 0.02 , Bipolar Power Transistor Device Data 3 2N3771 2N3772 100 50 VCC = 30 V _ IC /lB = 10 lB1 - lB2 T , -204AA (TO-3) ISSUE Z Motorola Bipolar Power Transistor Device Data 5 2N3771 2N3772 M otorola , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3771 /D High Pow er NPN , Vdc - 2N3771 = 2.5 Adc @ V q e = 60 Vdc - 2N3772 2N 3771* 2N 3772 'Motorola Preferred Device


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PDF 2N3771/D 2N3771 2N3772 2n3772 2N3771 motorola 2n3771 LB2T 2N3771 power circuit
2006 - 2N3771

Abstract: 2N3771 power circuit 2N3772 transistor 2N3771 1N5825 2N6257 MSD6100 2N3771 power transistor Power Transistor 2N3771
Text: ON Semiconductort 2N3771 * 2N3772 High Power NPN Silicon Power Transistors . . . designed , Publication Order Number: 2N3771 /D 2N3771 2N3772 PD, POWER DISSIPATION (WATTS) 200 175 150 125 , 2000 Figure 2. Thermal Response - 2N3771 , 2N3772 There are two limitations on the power handling , Semiconductor Preferred Device 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS 150 WATTS · Forward Biased Second Breakdown Current Capability w IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771


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PDF 2N3771* 2N3772 2N3771 2N3771/D 2N3771 2N3771 power circuit 2N3772 transistor 2N3771 1N5825 2N6257 MSD6100 2N3771 power transistor Power Transistor 2N3771
2001 - 1N5825

Abstract: 2N3771 2N3772 2N6257 MSD6100
Text: ON Semiconductort 2N3771 * 2N3772 High Power NPN Silicon Power Transistors . . . designed , POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS 150 WATTS IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 , , COLLECTOR CURRENT (AMP) 30 40 µs 2N3771 20 There are two limitations on the power handling , Symbol 2N3771 2N3772 Unit Collector­Emitter Voltage VCEO 40 60 Vdc , Symbol 2N3771 , 2N3772 Unit JC 1.17 _C/W Operating and Storage Junction Temperature


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PDF 2N3771* 2N3772 2N3771 r14525 2N3771/D 1N5825 2N3771 2N3772 2N6257 MSD6100
2006 - Not Available

Abstract: No abstract text available
Text: 2N3771 , 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These , otherwise noted) 2N3771 , 2N3772 2N3771 , 2N3772 PD, POWER DISSIPATION (WATTS) 200 175 150 125 , is permissible to increase the pulse power limits until limited by T J(max). 40 ms 2N3771 , Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772 Pb−Free Packages are Available* 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS, 150 WATTS


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PDF 2N3771, 2N3772 2N3771 2N3771 2N3771/D
2006 - 2N3771

Abstract: 2N3772G 2N3772 1N5825 2N3771G 2N6257 MSD6100 2N3771 power transistor
Text: 2N3771 , 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These , @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 Pb-Free Packages are Available* 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS, 150 WATTS ÎÎ Î Î Î , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (Note 1) Symbol 2N3771 , Country of Origin ORDERING INFORMATION Device 2N3771 2N3771G 2N3772 2N3772G Package Shipping


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PDF 2N3771, 2N3772 2N3771 2N3771 2N3771/D 2N3772G 2N3772 1N5825 2N3771G 2N6257 MSD6100 2N3771 power transistor
1995 - 2N3772 motorola

Abstract: 2N3771 1N5825 2N3772 2N6257 MSD6100 motorola 2n3771
Text: 3.75 Adc @ VCE = 40 Vdc - 2N3771 IS/b = 2.5 Adc @ VCE = 60 Vdc - 2N3772 20 and 30 AMPERE POWER , MSD6100 USED BELOW IB 100 mA Figure 4. Switching Time Test Circuit Motorola Bipolar Power , Bipolar Power Transistor Device Data 5 2N3771 2N3772 Motorola reserves the right to make changes , Motorola Bipolar Power Transistor Device Data * 2N3771 /D* 2N3771 /D Motorola , © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 REV 7 Preferred


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PDF 2N3771/D* 2N3771/D 2N3772 motorola 2N3771 1N5825 2N3772 2N6257 MSD6100 motorola 2n3771
diode cc 3053

Abstract: 2n3772 EQUIVALENT 2N3771 1N1186A 2N3772 2n3771 equivalent 2N3772 JAN
Text: , SILICON, HIGH-POWER, TYPES 2N3771 AND 2N3772, JAN, JANTX, AND JANTXV This specification is approved for , +200 -65 to +200 6 150 2N3771 1.17 29.2 6 150 2N3772 1.17 29.2 (1) Derate linearly 34.2 , characteristics. Type hFE2 at VCE = 4 V dc IC = 15 A dc Max Min 2N3771 15 60 2N3772 (1) Pulsed (see , = 1 A dc f = 100 kHz IE = 0 100 kHz f 1 MHz 2N3771 2N3772 Limits s Min Max 6 , requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA +35°C; VCB = 25 V


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PDF MIL-PRF-19500/413F MIL-PRF-19500/413E 2N3771 2N3772, MIL-PRF-19500. diode cc 3053 2n3772 EQUIVALENT 1N1186A 2N3772 2n3771 equivalent 2N3772 JAN
diode cc 3053

Abstract: cc 3053 2n3771 equivalent 2n3772 EQUIVALENT cc 3053 diode 2N3771 equivalent transistor MIL-PRF19500 MIL-PRF-19500 Transformer Inspection Testing 1N1186A
Text: , HIGH-POWER TYPES 2N3771 AND 2N3772, JAN, JANTX, AND JANTXV This specification is approved for use by all , 20 -65 to +200 -65 to +200 2N3771 2N3772 1/ Derate linearly 34.2 mW/C for TA > +25C. 2 , VCE(SAT) IC = 15 A dc Min 2N3771 2N3772 IC = 10 A dc Max Min Max 5 60 15 1 , 0 100 kHz < f < 1 MHz 2N3771 2N3772 s Min Max 6 30 1,200 pF s s s 10 , initial reading. Subgroup 2 of table I herein. 4.3.1 Power burn-in conditions. Power burn-in


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PDF MIL-PRF-19500/413C MIL-S-19500/413B 2N3771 2N3772, MIL-PRF-19500. diode cc 3053 cc 3053 2n3771 equivalent 2n3772 EQUIVALENT cc 3053 diode 2N3771 equivalent transistor MIL-PRF19500 MIL-PRF-19500 Transformer Inspection Testing 1N1186A
2N3772 motorola

Abstract: 2N6257 200iC MJ3771 MOTOROLA MJ3771 MJ3772 W630 2N3771 2N3772 lj377
Text: : ~: :-; :;),: and~or ~,;:. Unibase for ultimate circuit EPIBASEA- Designed , regulators applications. i3reakdowrr (@ \/CE = Current Capability 40 Vdc ­ 2N3771 2.5 , Collector-Emitter Sustaining Voltage vcEO(S"~) 2N3771 .- Collector-Emitter Sustaining Collector-Emitter (Ic =0.2 MJ3771 MJ3772 M. I 2N3771 MJ3771 I I I I I I Sustain ing Voltage Adc, RBE = 1000hms) `CEX(SUS) VCER(S"~) 2N3771 2N3772 = 1.5 Vdc, Vdc


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PDF lJ3771 10Adc M305300 MSO61OO 2N3771, 2N3772, 2N6257 MJ3771 48w-2 MJ6257 2N3772 motorola 2N6257 200iC MJ3771 MOTOROLA MJ3771 MJ3772 W630 2N3771 2N3772 lj377
1995 - 2N3771

Abstract: 2N3772 P003N
Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771 , 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal , -3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Unit 2N3771 , 2N3771 /2N3772 THERMAL DATA R thj -ca se Thermal Resistance Junction-case Max o 1.17 C/W , 2N3771 V CB = 50 V for 2N3772 V CB = 100 V o for ALL V CB = 30 V T j = 150 C 2 5 10 mA mA


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PDF 2N3771 2N3772 2N3771, 2N3772 2N3771 P003N
1997 - 2N3772

Abstract: 2N3771
Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771 , 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal , -3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t 2N3771 V , o C 1/4 2N3771 /2N3772 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case , Current (V BE = -1.5V) for 2N3771 for 2N3772 for all V CB = 50 V V CB = 100 V VCB = 30 V T j =


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PDF 2N3771 2N3772 2N3771, 2N3772 2N3771
2000 - Not Available

Abstract: No abstract text available
Text: 2N3771 2N3772 ® HIGH POWER NPN SILICON TRANSISTOR I STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771 , 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec , Unit 2N3771 V CEO 2N3772 Collector-Emitter Voltage (I E = 0) 40 60 V V CEV , Temperature December 2000 150 -65 to 200 W o C 1/4 2N3771 /2N3772 THERMAL DATA R thj-case , CEV Collector Cut-off Current (V BE = -1.5V) for 2N3771 V CB = 50 V for 2N3772 V CB = 100 V


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PDF 2N3771 2N3772 2N3771, 2N3772
2000 - 2N3771

Abstract: 2N3772 2N3771 power circuit 2N3772 APPLICATIONS
Text: 2N3771 2N3772 ® HIGH POWER NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771 , 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec , Unit 2N3771 2N3772 60 V V CEO Collector-Emitter Voltage (I E = 0) 40 V CEV , T stg December 2000 150 -65 to 200 W o C 1/4 2N3771 /2N3772 THERMAL DATA R , . Unit I CEV Collector Cut-off Current (V BE = -1.5V) for 2N3771 V CB = 50 V for 2N3772 V CB =


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PDF 2N3771 2N3772 2N3771, 2N3772 2N3771 2N3771 power circuit 2N3772 APPLICATIONS
2000 - 2N3772

Abstract: 2N3771
Text: 2N3771 2N3772 ® HIGH POWER NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771 , 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec , Uni t 2N3771 V CEO Collector-Emitter Voltage (IE = 0) 2N3772 40 60 V V CEV , December 2000 150 -65 to 200 A W o C 1/4 2N3771 /2N3772 THERMAL DATA R t hj-ca se , I CEV Collector Cut-off Current (V BE = -1.5V) for 2N3771 for 2N3772 for all VCB = 50 V


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PDF 2N3771 2N3772 2N3771, 2N3772 2N3771
1997 - 2N3772

Abstract: 2N3771 2N3772 APPLICATIONS 2N3771 canada 20A40
Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771 , 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal , -3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3771 , . Operating Junction Temperature 15 150 A W -65 to 200 o C 200 o C 1/4 2N3771 , Min. Typ. Max. Unit I CEV Collector Cut-off Current (V BE = -1.5V) for 2N3771 V CB


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PDF 2N3771 2N3772 2N3771, 2N3772 2N3771 2N3772 APPLICATIONS 2N3771 canada 20A40
2N3771G

Abstract: 2N3771 2N3772 2N3772G 2N6257
Text: 2N3771 , 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These , 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 Pb-Free Packages are Available* 20 and 30 AMPERE POWER , Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (Note 1) Symbol 2N3771 2N3772 Unit , 2N3771 2N3771G 2N3772 2N3772G Package Shipping TO-204 100 Units / Tray TO-204 (Pb-Free , Breakdown Energy with Base Forward Biased, t = 1.0 s (non-repetitive) (VCE = 40 Vdc) 2N3771 (VCE = 60 Vdc


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PDF 2N3771, 2N3772 2N3771 2N3771 O-204AA 2N3771G 2N3772 2N3772G 2N6257
2N3772

Abstract: 2N3771 r33v
Text: nrr* 2N3771 ,2N3772 N-P-N SILICON POWER TRANSISTORS 62c 36578 T-33-/3 electrical characteristics , TEXAS INSTR -COPTO} bb de |fl^tl7at, gd3bs77 S9S1726 TEXAS INSTR 2N3771 ,2N3772 N-P-N SILICON POWER TRANSISTORS DECEMBER 1971 - REVISED OCTOBER 1984 150 W at 25°C Case Temperature 30 A Continuous Collector Current ( 2N3771 ) 20 A Continuous Collector Current (2N3772) 30 A Peak , 25°C case temperature (unless otherwise noted) 2N3771 2N3772 "Collector-base voltage 50 V 100V


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PDF gd3bs77 S9S1726 2N3771 2N3772 2N3771) 2N3772) 2N3772 flTbl72t: 003bS7< r33v
2N3773

Abstract: 2N3772 TEXAS 2N3771 2N3771 IC-15
Text:  2N3771 , 2N3772, 2N3773 NPN DIFFUSED MESA SILICON POWER TRANSISTORS Power Dissipation @ Tc = 25 , SILICON POWER TRANSISTORS MAXIMUM OPERATING AREAS FOR TYPES 2N3771 & 2N3772 Case Temperature (Tc = 25®C , % Power Cycled AQL of 0.65 at LTPD of 5.0 With MIL and JAN Specification availabe -30,4-17,25 , Tc = 25 °C 2N3771 2N3772 2N3773 Collector-Base Voltage, Emitter Open-Circuit.50 V 100 , A Base Current.7.5 A 5 A 4 A Total Power Dissipation


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PDF 2N3771, 2N3772, 2N3773 2N3771 2N3772 2N3773 TEXAS 2N3771 IC-15
2N3771

Abstract: No abstract text available
Text: Power Transistors T -3 3 -f3 File Number 2N3771 , 2N3772 H A RR IS S E M I C O N D S E CT OR , fo r both types. Fig . 2 - Typical dc-beta characteristics fo r 2N3771 . 2-53 Power , A { d c ) TERMINAL DESIGNATIONS T h e 2N3771 and 2N 3772 are s ilic o n n -p -n tra n s is to rs , . ` In a cco rd a n ce w ith JE D E C re g is tra tio n data. 2N3771 50 50 40 5 30 30 7.5 15 150 , /°C ÔC °C 2-52 - T - 3 3 - 7 3 ö HHAS - Power


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PDF 2N3771, 2N3772 2N3771 2N3772. /or2N3771. 2N3772 for2N3772. for2N3771.
2N3773 voltage regulator

Abstract: 2n3773 power Amplifier 2N3771 2N3772 APPLICATIONS westinghouse transistors 2N3771-73
Text: POUEREX I T D 54-673 Page 7 Westinghouse Silicon Power T ransistors J E D E C Types 2N3771 -73 For Switching, Amplifier and Regulator Applications 30 Amperes, 150 Watts I a > £ CO Application JE D E C types 2N3771 -73 are NPN diffused transistors. These general-purpose tran , power semiconductors, types 2N3771-73 carry The Westinghouse Lifetime Guarantee. Dimensions in Inches , defects in workmanship, by repair or replacement f.o.b. factory, for any silicon power semiconductor


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PDF 2N3771 2N3773+ C/1116/DB; C/1117 2N3773 voltage regulator 2n3773 power Amplifier 2N3772 APPLICATIONS westinghouse transistors 2N3771-73
TEXAS 2N3771

Abstract: 2h37 STR 5012 lc 5012 m
Text: TYPES 2N3771 , 2N3772 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR UNTUNED POWER-AMPLIFIER APPLICATIONS 150 W at 25°C Case Temperature 30-A Rated Continuous Collector Current ( 2N3771 ) 20 , ss o th e r w is e n o te d ) 2N3771 50 V * 50 V * 2N 3772 100 V * C ollecto r-B ase V o l t a g , . for a nonrepetifive pulse of any duration far the 2N3771 , or of 50Q-ms maxim um duration for the , OFFICE BOX 5012 · DALLAS, TEXAS 75222 5.109 TYPES 2N3771 , 2N3772 N-P-N SINGLE-DIFFUSED MESA


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PDF 2N3771, 2N3772 2N3771) 2N3772) 2N3771 2N3772 TEXAS 2N3771 2h37 STR 5012 lc 5012 m
2004 - Not Available

Abstract: No abstract text available
Text: LivePerson l l l l Submit ¡ ¡ ¡ 2N3771 Availability Buy 2N3771 at our online store ! 2N3771 Information Cate gory » Transistors Class » Transistors; Bipolar; Si NPN Power Type » Transistors; Bipolar; Si NPN Power 2N3771 Specifications Milita ry/High-R e l : N V(BR )C EO (V) : 40 V


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PDF 2N3771
3771

Abstract: ot 409 transistor 2N3771 2N 3771
Text: SGS-THOMSON Kl(gKLiM(s)!0(gS 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771 , 2N3772 are silicon epitaxial-base NPN transistors mounted in , 1- e o T, Ui °c 1/4 2N3771 /2N3772 THERMAL DATA Rihj-case T h e rm a l R e s is ta , ^ 7# ftoaetigmiemroiies / r r sGS-m0MS0N 2N3771 /2N3772 TO-3 MECHANICAL DATA mm in c h , 2N3771 /2N3772 Irrformation furnished is believed to be accurate and reliable. However, SGS-THOMSON


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PDF 2N3771 2N3772 2N3771, 2N3772 3771 ot 409 transistor 2N3771 2N 3771
RCA 2N3055 transistor

Abstract: 2N3442 RCA transistor BF 257 2N3055 RCA rca 2n3771 2N3772 RCA rca 2n3055 2N4348 RCA 2n3055r rca transistor
Text: APPLICATION INFORMATION . _ T . Power Types for Electrostatic Deflection Power Tvnes ÎN-P-N & P-N-Pl as Pass Transistors for Series Reaulator Service and Video Outout Pass Transistor , ] L2N4036J 2N1482 2N5321 2N5323 2N6179 2N6181 2N3054 .2N5955 2N5497 2N6106 [2N3055] r|_2N6247jl L 2N3771 , SPECIFICATION TYPES Power Transistors RCA (JAN) Type No. MIL-Spec. 19500/ RCA(JAN) Type No. MIL-Spec. 19500 , TX2N3439 368 2N3771 413 TX2N6211 461 2N1483 180 2N1488 208 2N3440 368 TX2N3771 413 2N6212 461 TX2N1483


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PDF 2N2102] L2N4036J 2N1482 2N5321 2N5323 2N6179 2N6181 2N3054 2N5955 2N5497 RCA 2N3055 transistor 2N3442 RCA transistor BF 257 2N3055 RCA rca 2n3771 2N3772 RCA rca 2n3055 2N4348 RCA 2n3055r rca transistor
Ultrasonic amplifier 50w

Abstract: 2n6259 general 2N5786 2N5298 2N344 2N3054 2N1482 BDY37 BDY29 2n3773 power Amplifier
Text: Ic to 80 A . Pt to 300 W . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES lc - 1.6 A max , 2N3054 2N5298 2N344Ì 2N6478 2N5496 2N3055 2N6103 2N3442 2N3771 2N3773 2N5578 40347 VCEV(sus) = 60 V hFe , 20-70 ®3A fT - 0.8 MHz tvp. PT- 117W 2N3771 VCERlsosl = 45 V hFE = 15-60 @ 15 A fT = 0.8 MHz min. PT , 353 524 668 CT— Complementary Type available, see matrix on Complementary-Pair Power Types , . . . Power Types [N-P-N & P-N-P] for Inverter/Switching Regulator Service Frequency Range Peak


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PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 Ultrasonic amplifier 50w 2n6259 general 2N5786 2N5298 2N344 2N3054 2N1482 BDY37 BDY29 2n3773 power Amplifier
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