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JAN2N3767 Microsemi Corporation Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, TO-66, 2 PIN
JANTXV2N3767 Microsemi Corporation Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, TO-66, 2 PIN
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2N3767 Motorola Semiconductor Products Bristol Electronics 9 $8.96 $5.82
2N3767 SSI Bristol Electronics 12 - -
2N3767 Fairchild Semiconductor Corporation Bristol Electronics 1 - -
2N3767 NES Bristol Electronics 8 $8.96 $5.82
2N3767-DIE Motorola Semiconductor Products Bristol Electronics 147 - -
2N3767JANTX Cobham Semiconductor Solutions Avnet 141 $23.99 $20.99
2N3767JANTXV Cobham Semiconductor Solutions Avnet - $35.39 $32.39
JAN2N3767 Cobham Semiconductor Solutions Avnet - $19.29 $17.69
JANTX2N3767 Microsemi Corporation Future Electronics - $36.11 $28.89

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2N3767 datasheet (52)

Part Manufacturer Description Type PDF
2N3767 Central Semiconductor Power Transistors Original PDF
2N3767 Microsemi NPN POWER SILICON TRANSISTOR Original PDF
2N3767 Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=80 / Ic=4 / Hfe=40-160 / fT(Hz)=10M / Pwr(W)=20 Original PDF
2N3767 Advanced Semiconductor Silicon Transistors Scan PDF
2N3767 API Electronics Transistor Selection Guide Scan PDF
2N3767 API Electronics Short form transistor data Scan PDF
2N3767 API Electronics Short form transistor data Scan PDF
2N3767 Diode Transistor Transistors Scan PDF
2N3767 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N3767 General Diode Transistor Selection Guide Scan PDF
2N3767 General Transistor Power Transistor Selection Guide Scan PDF
2N3767 Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N3767 Motorola The European Selection Data Book 1976 Scan PDF
2N3767 Motorola European Master Selection Guide 1986 Scan PDF
2N3767 Motorola Power Transistor Selection Guide Scan PDF
2N3767 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2N3767 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N3767 Others Semiconductor Master Cross Reference Guide Scan PDF
2N3767 Others Shortform Transistor Datasheet Guide Scan PDF
2N3767 Others Vintage Transistor Datasheets Scan PDF

2N3767 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - 2n3767

Abstract: 2N3766 transistor 2N3766 TO-66 CASE TRANSISTOR TO-66
Text: Central 2N3766 2N3767 NPN SILICON POWER TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3766, 2N3767 types are silicon NPN power transistors manufactured by the , 2N3767 Collector-Base Voltage VCBO 80 100 V Collector-Emitter Voltage VCEO 60 , VEB=6.0V 500 A 500 A BVCEO IC=100mA (2N3766) IC=100mA ( 2N3767 ) BVCEO VCE(SAT , pF R1 (25-October 2007) Central TM Semiconductor Corp. 2N3766 2N3767 NPN SILICON


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PDF 2N3766 2N3767 2N3766, 2N3767 100mA 2N3766) 2N3767) 2N3766 transistor 2N3766 TO-66 CASE TRANSISTOR TO-66
2002 - 2N3767

Abstract: 2N3766 2000C transistor 2N3766
Text: Level 2N3766 JAN JANTX JANTXV 2N3767 MAXIMUM RATINGS Ratings Collector-Emitter Voltage , +250C (1) Operating & Storage Temperature Range Symbol 2N3766 2N3767 Units VCEO VCBO , 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit 2N3766 2N3767 V(BR)CEO 60 80 2N3766 2N3767 ICEO 500 500 µAdc 2N3766 2N3767 ICEX 10 10 µAdc 2N3766 2N3767 ICBO 10 10 µAdc IEBO 500 OFF CHARACTERISTICS


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PDF MIL-PRF-19500/518 2N3766 2N3767 O-213AA) 2000C 2N3767 2N3766 2000C transistor 2N3766
2010 - Not Available

Abstract: No abstract text available
Text: 2N3767 NPN Transistor 11.67 Transistors Bipolar Silicon NPN Power T. http://store.americanmicrosemiconductor.com/ 2n3767.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N3767 2N3767 NPN Trans is to r Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2) Their price was very reasonable (unlike , Price: Our Price: You Save: Americanmicrosemi 2N3767 $ 14.59 $ 11.67 $ 2.92 Total Price $ 11.67


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PDF 2N3767 com/2n3767 2N3767
Not Available

Abstract: No abstract text available
Text: Qualified Level 2N3766 JAN JANTX JANTXV 2N3767 MAXIMUM RATINGS Ratings Collector-Emitter , Dissipation @ TC = +250C (1) Operating & Storage Temperature Range Symbol 2N3766 2N3767 Units , 2N3767 V(BR)CEO 60 80 2N3766 2N3767 ICEO 500 500 µAdc 2N3766 2N3767 ICEX 10 10 µAdc 2N3766 2N3767 ICBO 10 10 µAdc IEBO 500 OFF CHARACTERISTICS , of 2 2N3766, 2N3767 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol


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PDF MIL-PRF-19500/ 2N3766 2N3767 O-213AA) 2000C
1999 - 2N3767

Abstract: 2N3766 2000C
Text: TECHNICAL DATA 2N3766 JAN, JTX, JTXV 2N3767 JAN, JTX, JTXV MIL-PRF QPL DEVICES , 2N3767 Units VCEO VCBO VEBO IB IC PT 60 80 80 100 Vdc Vdc Vdc Adc Adc W 6.0 , otherwise noted) Characteristics Symbol Min. Max. Unit 2N3766 2N3767 V(BR)CEO 60 80 2N3766 2N3767 ICEO 500 500 µAdc 2N3766 2N3767 ICEX 10 10 µAdc 2N3766 2N3767 , 2N3766, 2N3767 JAN SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics Symbol Min. Max


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PDF 2N3766 2N3767 MIL-PRF-19500/518 2N3766 2N3767 O-213AA) 2000C
2013 - 2N3766

Abstract: 2N3767 2N3767 JANTX
Text: NPN Power Silicon Transistor 2N3766 & 2N3767 Features · · Available in JAN, JANTX, and JANTXV per , 60 80 6.0 2.0 4.0 25 -65 to +200 2N3767 80 100 Units Vdc Vdc Vdc Adc Adc W °C Thermal , 2N3767 Collector - Emitter Cutoff Current VCE = 60 Vdc VCE = 80 Vdc Collector - Emitter Cutoff Current , VCB = 100 Vdc Emitter - Base Cutoff Current VEB = 6.0 Vdc 2N3766 2N3767 2N3766 2N3767 2N3766 2N3767 , 2N3766 & 2N3767 Electrical Characteristics -con't ON Characteristics (2) Forward Current Transfer Ratio


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PDF 2N3766 2N3767 MIL-PRF-19500/518 O-213AA) 2N3766 2N3767 JANTX
2N3767

Abstract: 2N3766 C-2688
Text: 2N3766 and 2N3767. 14 MIL-PRF-19500/518D 5. PACKAGING * 5.1 Packaging. For acquisition purposes , , SILICON, POWER, TYPE 2N3766, 2N3767 , JAN, JANTX, AND JANTXV This specification is approved for use by , , TC = +25°C. 2N3766 2N3767 PT (1) VCBO VCEO VEBO IB IC TJ and TSTG RJC , 20 20 Type 2N3766 2N3767 Max 50 50 VCE(sat)1 VCE(sat)2 IC = 1 A dc IB = 0.1 A dc Type IC = 500 mA dc IB = 50 mA dc Min 2N3766 2N3767 Max Min 2.5 2.5


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PDF MIL-PRF-19500/518D MIL-PRF-19500/518C 2N3766, 2N3767, MIL-PRF-19500. 2N3767 2N3766 C-2688
2004 - Not Available

Abstract: No abstract text available
Text: LivePerson l l l l Submit ¡ ¡ ¡ 2N3767 Availability Buy 2N3767 at our online store ! 2N3767 Information Cate gory » Transistors Class » Transistors; Bipolar; Si NPN Power Type » Transistors; Bipolar; Si NPN Power 2N3767 Specifications Milita ry/High-R e l : N V(BR )C EO (V) : 80 V


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PDF 2N3767
2N3767

Abstract: 2N3766 TO-66
Text: Central™ Semiconductor corp. 145 Adams Avenue Hauppauge, New York 11 788 ♦ I 2N3766 2N3767 NPN SILICON POWER TRANSISTOR JEDEC TO-66 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3766, 2N3767 types are silicon NPN by the epitaxial base process designed for power amplifier and appli cat i ons. MAXIMUM RATINGS (TC=25°C unless otherwise noted) symbol 2N3766 2N3767 vCB0 80 100 vCE0 60 80 , =0, f=100kHz 60 30 ko 20 ko 10 2N3767 20 ko 10 V V V A A W 3C 'C/W MAX MIN MAX UNIT 0, . 1


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PDF 2N3766 2N3767 2N3766, 2N3767 100mA 500mA, 500mA TO-66
2N3766 MOTOROLA

Abstract: 2N3766 2N3741 MOTOROLA 2n3767 motorola 2N3767 2N3741 2h37 2N3740 motorola motorola 2n3766
Text: TECHNICAL DATA SEMICONDUCTOR 2N3766 2N3767 M E D IU M - P O W E R N P N S IL IC O N T R A N S I S T , -213AA Package Complementary to PNP 2N3740 (2N3766) and 2N3741 ( 2N3767 ) M A X IM U M R A TIN G S Rating C o , tu re R ange = 2 5°C Symbol VC E O «? 2N3766 i 60 80 1 2N3767 60 100 Unit V de V dc V , >7554 00044=10 2N3766, 2N3767 fl I 7 " 3 3 -0*7 E L E C T R IC A L C H A R A C T E R IS T IC S , 2N376S 2N3767 2N3786 2N3767 2N3766 2N3767 *CBO *CEO 2N376Ö 2N3767 v (BR)CEO Vdc 60 so _ (Tc = 25*C u


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PDF 2N3766 2N3767 O-213AA 2N3740 2N3766) 2N3741 2N3767) 2N3766 MOTOROLA 2N3741 MOTOROLA 2n3767 motorola 2N3767 2N3741 2h37 2N3740 motorola motorola 2n3766
2N3766

Abstract: 2N3767 C-2688 MIL-PRF19500 2N3767 JANTX
Text: operating area graph (continuous dc) for types 2N3766 and 2N3767. 12 MIL-PRF-19500/518C(USAF) 5 , , TRANSISTOR, NPN, SILICON, POWER TYPE 2N3766, 2N3767 JAN, JANTX, AND JANTXV This specification is approved , 100 60 80 6 6 2 2 4 4 -65 to +200 -65 to +200 7 7 2N3766 2N3767 1 , mA dc f = 10 MHz Max Min IC = 1 A dc IB = 0.1 A dc Type Min 2N3766 2N3767 20 20 , = 1 A dc IB = 0.1 A dc Type IC = 500 mA dc IB = 50 mA dc Min 2N3766 2N3767 Max


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PDF MIL-PRF-19500/518C MIL-S-19500/518B 2N3766, 2N3767 MIL-PRF-19500. T0-66) 2N3766 C-2688 MIL-PRF19500 2N3767 JANTX
Not Available

Abstract: No abstract text available
Text: na. TELEPHONE: (973) 378-2008 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA (212) 227-8008 FAX: (973) 3784080 2N3767 MAXIMUM RATINGS (Tc = 25'Cunlwoth.rwlse notad) (TO-66) 2N3767 Unit 100 Vdc V EB 6.0 Vdc VCEO 80 Vdc 4.0 Adc Symbol Rating Collector-Base Voltage VCB Emitter-Base Voltage Collector-Emitter Voltage Collector Current - Continuous 'c Peak 4.0 Base Current 2.0 Adc 20 0.133 7.5 Watts W/"C °C/W -65 to


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PDF 2N3767 WidthJ300M*
Not Available

Abstract: No abstract text available
Text: 2N3767+JANTX Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.160 @I(C) (A) (Test Condition)500m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq10M @I(C) (A) (Test Condition) @V(CE) (V


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PDF 2N3767 Freq10M
2010 - 2N3767

Abstract: LE17
Text: SILICON NPN TRANSISTOR 2N3767 · Low Saturation Voltage · High Gain Characteristics · Hermetic TO66 Metal Package · High Reliability Screening Options Available · Switching and Medium Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PT Collector ­ Base Voltage Collector ­ Emitter Voltage Emitter ­ , Number 9157 Issue 1 Page 1 of 2 SILICON NPN TRANSISTOR 2N3767 ELECTRICAL CHARACTERISTICS (TC = 25


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PDF 2N3767 143mW/ 300us, O-213AA) 2N3767 LE17
Not Available

Abstract: No abstract text available
Text: SILICON NPN TRANSISTOR 2N3767 • Low Saturation Voltage • High Gain Characteristics • Hermetic TO66 Metal Package • High Reliability Screening Options Available • Switching and Medium Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PT Collector – Base Voltage Collector – Emitter Voltage , Number 9157 Issue 1 Page 1 of 2 SILICON NPN TRANSISTOR 2N3767 ELECTRICAL CHARACTERISTICS (TC = 25Â


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PDF 2N3767 143mW/Â 300us, O-213AA)
2002 - 2N3767

Abstract: 2N3767 JANTX
Text: 2N3767 Dimensions in mm (inches). 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. VCEO = 80V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX


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PDF 2N3767 O213AA) 1-Aug-02 2N3767 2N3767 JANTX
Not Available

Abstract: No abstract text available
Text: 2N3767+JANTXV Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.160 @I(C) (A) (Test Condition)500m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq10M @I(C) (A) (Test Condition) @V(CE) (V


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PDF 2N3767 Freq10M
2N1716

Abstract: 2N3738 2N3879 2N3767
Text: BIPOLAR NPN MESA POWER TRANSISTORS DEVICE TYPE PEAK c AMPS VCE (sat) max VOLTS PACKAGE bvceo VOLTS hFE min/max < o m < c @ ' b A A / T0-205 (T° -5) o 2N1714* 2N1715* 2N1716 2N1717* 60 100 60 100 0.75 0.75 0.75 0.75 20 min 20 min 40 min 40 min 0.2/5.0 0.2/5.0 0.2/5.0 0.2/5.0 2.0 2.0 2.0 2.0 0.2/0.02 0.2/0.02 0.2/0.02 0.2/0.02 nr ^ TO-213 (TO-66) - 2N3584* 2N3585* 2N3766* 2N3767 * 2N3738 2N3739* 2N3879" 300 400 60 80 225 300 75 5.0 5.0 1.0


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PDF T0-205 2N1714* 2N1715* 2N1716 2N1717* O-213 2N3584* 2N3585* 2N3766* 2N3767* 2N3738 2N3879 2N3767
POWER TRANSISTORS 10A 400v pnp

Abstract: NPN Transistor 10A 400V to3 2N1489 pnp 400v 10a 2N1468 2N6350 2NXXXX 1526a 2N1400 2N6352
Text: 2N3767 YES YES YES /518A 10-A 2N3846 YES YES X /412 11-C 2N3847 YES YES X /412 11-C 2N3867 YES YES YES , 75V 80V 2N1047A 2N1049A 2N424 2N3419 2N3421 2N3767 2N1722 2N1724 90V


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PDF T-33-Ã flES40aa D0D07Ã 19S00 2N389 /173A 2N424 2N1016B /102A POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 2N1489 pnp 400v 10a 2N1468 2N6350 2NXXXX 1526a 2N1400 2N6352
2N3820

Abstract: No abstract text available
Text: RF 2N3766 2N3767 2N3791 2N3792 2N3821 through 2N3823 2-5 2-5 2-6 2N4948 2N4949


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PDF 2N3743 2N3439 2N3440 2N3444S 2N3467 2N3468 2N34B5A 2N3486A 2N3715 2N3716 2N3820
Not Available

Abstract: No abstract text available
Text: 0043592 A P I E LE CTRONICS INC _. _13A0Q67 3 VI ELECTRONICS INC 13 DE J □□43Sc □OOODb? 2 ia A P I U W NPN and PNP Complementary Silicon Planar Power Transistors continued . A bPRA ,UE ClECTR C S'JQS OlARY 2A TO-5 TO-66 BV ceo TO-46 NPN PNP NPN PNP NPN PNP 60V 2N3766 2N3740 PG1050 PG2050 PG1001 PG2001 80V 2N3767 2N3741 PG1051 P G2051 PG1002 PG2002 100V PG1103 PG2103 PG1052


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PDF 13A0Q67 2N3766 2N3740 PG1050 PG2050 PG1001 PG2001 2N3767 2N3741 PG1051
Not Available

Abstract: No abstract text available
Text: 2N3767+JAN Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.160 @I(C) (A) (Test Condition)500m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq10M @I(C) (A) (Test Condition) @V(CE) (V


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PDF 2N3767 Freq10M
2N1716

Abstract: 2N3584 NPN 2N3767 JANTX 2N3740 2N1716 JANTX TO-213
Text: * 2N3766" 2N3767 * 2N3738 2N3739* 2N3879* 300 400 60 80 225 300 75 5.0 5.0 1.0 1.0 0.25 0.25 7.0


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PDF T0-205 O-213 2N1716 2N1717* 2N3584* 2N3585* 2N3766" 2N3767* 2N3738 2N3584 NPN 2N3767 JANTX 2N3740 2N1716 JANTX TO-213
Not Available

Abstract: No abstract text available
Text: 2N3767 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.160 @I(C) (A) (Test Condition)500m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq10M @I(C) (A) (Test Condition) @V(CE) (V) (Test


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PDF 2N3767 Freq10M
2002 - Not Available

Abstract: No abstract text available
Text: 2N3767 Dimensions in mm (inches). 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. VCEO = 80V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX


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PDF 2N3767 O213AA) 30-Jul-02
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