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JANTXV2N3766 Microsemi Corporation Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, TO-66, 2 PIN
JANTX2N3766 Microsemi Corporation Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, TO-66, 2 PIN
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2N3766 Unknown Bristol Electronics 1 - -
2N3766 Motorola Semiconductor Products Bristol Electronics 2,300 - -
2N3766JANTX Cobham Semiconductor Solutions Avnet - $21.89 $19.99
2N3766JANTXV Cobham Semiconductor Solutions Avnet - $33.59 $30.79
JAN2N3766 Cobham Semiconductor Solutions Avnet - $20.79 $19.09
JANTX2N3766 Microsemi Corporation Chip1Stop 3,179 $44.10 $25.60

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2N3766 datasheet (53)

Part Manufacturer Description Type PDF
2N3766 Microsemi NPN Power Silicon Transistor Original PDF
2N3766 Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=4 / Hfe=40-160 / fT(Hz)=10M / Pwr(W)=20 Original PDF
2N3766 Advanced Semiconductor Silicon Transistors Scan PDF
2N3766 API Electronics Transistor Selection Guide Scan PDF
2N3766 API Electronics Short form transistor data Scan PDF
2N3766 API Electronics Short form transistor data Scan PDF
2N3766 Central Semiconductor BJT, NPN, Power Transistor, IC 4A - Pol=NPN / Pkg=TO66 / Vceo=60 / Ic=4 / Hfe=40-160 / fT(Hz)=10M / Pwr(W)=20 Scan PDF
2N3766 Diode Transistor Transistors Scan PDF
2N3766 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N3766 General Diode Transistor Selection Guide Scan PDF
2N3766 General Semiconductor Low Frequency Silicon Power Transistor (Also available in JAN & JANTX) Scan PDF
2N3766 General Transistor Power Transistor Selection Guide Scan PDF
2N3766 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2N3766 Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N3766 Motorola The European Selection Data Book 1976 Scan PDF
2N3766 Motorola European Master Selection Guide 1986 Scan PDF
2N3766 Motorola Power Transistor Selection Guide Scan PDF
2N3766 Others Basic Transistor and Cross Reference Specification Scan PDF
2N3766 Others Transistor Shortform Datasheet & Cross References Scan PDF
2N3766 Others Basic Transistor and Cross Reference Specification Scan PDF

2N3766 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - 900NT

Abstract: 2N3766
Text: 2N3766 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. = 2N3766 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N3766 at our online store! 2N3766 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N3766 Information Did you Know , for Parts Request a Quote Test Houses 2N3766 Specifications Military/High-Rel : N V(BR)CEO (V


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PDF 2N3766 2N3766 STV3208 LM3909N LM3909 900NT
2007 - 2n3767

Abstract: 2N3766 transistor 2N3766 TO-66 CASE TRANSISTOR TO-66
Text: Central 2N3766 2N3767 NPN SILICON POWER TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3766 , 2N3767 types are silicon NPN power transistors manufactured by the , : FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL 2N3766 , VEB=6.0V 500 A 500 A BVCEO IC=100mA ( 2N3766 ) IC=100mA (2N3767) BVCEO VCE(SAT , pF R1 (25-October 2007) Central TM Semiconductor Corp. 2N3766 2N3767 NPN SILICON


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PDF 2N3766 2N3767 2N3766, 2N3767 100mA 2N3766) 2N3767) 2N3766 transistor 2N3766 TO-66 CASE TRANSISTOR TO-66
2002 - 2N3767

Abstract: 2N3766 2000C transistor 2N3766
Text: Level 2N3766 JAN JANTX JANTXV 2N3767 MAXIMUM RATINGS Ratings Collector-Emitter Voltage , +250C (1) Operating & Storage Temperature Range Symbol 2N3766 2N3767 Units VCEO VCBO , 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit 2N3766 2N3767 V(BR)CEO 60 80 2N3766 2N3767 ICEO 500 500 µAdc 2N3766 2N3767 ICEX 10 10 µAdc 2N3766 2N3767 ICBO 10 10 µAdc IEBO 500 OFF CHARACTERISTICS


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PDF MIL-PRF-19500/518 2N3766 2N3767 O-213AA) 2000C 2N3767 2N3766 2000C transistor 2N3766
2N3767

Abstract: 2N3766 C-2688
Text: , SILICON, POWER, TYPE 2N3766 , 2N3767, JAN, JANTX, AND JANTXV This specification is approved for use by , , TC = +25°C. 2N3766 2N3767 PT (1) VCBO VCEO VEBO IB IC TJ and TSTG RJC , 20 20 Type 2N3766 2N3767 Max 50 50 VCE(sat)1 VCE(sat)2 IC = 1 A dc IB = 0.1 A dc Type IC = 500 mA dc IB = 50 mA dc Min 2N3766 2N3767 Max Min 2.5 2.5 , , pulsed (see 4.5.1) ZJC °C/W V(BR)CEO 2N3766 2N3767 60 80 Collector to emitter cutoff


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PDF MIL-PRF-19500/518D MIL-PRF-19500/518C 2N3766, 2N3767, MIL-PRF-19500. 2N3767 2N3766 C-2688
1999 - 2N3767

Abstract: 2N3766 2000C
Text: TECHNICAL DATA 2N3766 JAN, JTX, JTXV 2N3767 JAN, JTX, JTXV MIL-PRF QPL DEVICES , Power Dissipation @ TC = 250C (1) Operating & Storage Junction Temperature Range Symbol 2N3766 , otherwise noted) Characteristics Symbol Min. Max. Unit 2N3766 2N3767 V(BR)CEO 60 80 2N3766 2N3767 ICEO 500 500 µAdc 2N3766 2N3767 ICEX 10 10 µAdc 2N3766 2N3767 , 2N3766 , 2N3767 JAN SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics Symbol Min. Max


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PDF 2N3766 2N3767 MIL-PRF-19500/518 2N3766 2N3767 O-213AA) 2000C
Not Available

Abstract: No abstract text available
Text: Qualified Level 2N3766 JAN JANTX JANTXV 2N3767 MAXIMUM RATINGS Ratings Collector-Emitter , Dissipation @ TC = +250C (1) Operating & Storage Temperature Range Symbol 2N3766 2N3767 Units , CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit 2N3766 2N3767 V(BR)CEO 60 80 2N3766 2N3767 ICEO 500 500 µAdc 2N3766 2N3767 ICEX 10 10 µAdc 2N3766 2N3767 ICBO 10 10 µAdc IEBO 500 OFF CHARACTERISTICS


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PDF MIL-PRF-19500/ 2N3766 2N3767 O-213AA) 2000C
2013 - 2N3766

Abstract: 2N3767 2N3767 JANTX
Text: NPN Power Silicon Transistor 2N3766 & 2N3767 Features · · Available in JAN, JANTX, and JANTXV per , = +25 °C (1) Operating & Storage Temperature Range Symbol VCEO VCBO VEBO IB IC PT Top, Tstg 2N3766 , °C unless otherwise noted) OFF Characteristics Collector - Emitter Breakdown Voltage IC = 100 mAdc 2N3766 , VCB = 100 Vdc Emitter - Base Cutoff Current VEB = 6.0 Vdc 2N3766 2N3767 2N3766 2N3767 2N3766 2N3767 , 2N3766 & 2N3767 Electrical Characteristics -con't ON Characteristics (2) Forward Current Transfer Ratio


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PDF 2N3766 2N3767 MIL-PRF-19500/518 O-213AA) 2N3766 2N3767 JANTX
2N3767

Abstract: 2N3766 TO-66
Text: Central™ Semiconductor corp. 145 Adams Avenue Hauppauge, New York 11 788 ♦ I 2N3766 2N3767 NPN SILICON POWER TRANSISTOR JEDEC TO-66 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3766 , 2N3767 types are silicon NPN by the epitaxial base process designed for power amplifier and appli cat i ons. MAXIMUM RATINGS (TC=25°C unless otherwise noted) symbol 2N3766 2N3767 vCB0 80 100 vCE0 60 80 , =10V, 2N3766 MIN IB=50mA Ib=0.1A lc=1.OA Ic=50mA Ic=500mA lc=1.OA Ic=100mA, f=1.0kHz lc=500mA, f=10MHz lc


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PDF 2N3766 2N3767 2N3766, 2N3767 100mA 500mA, 500mA TO-66
2N3766

Abstract: 2N3767 C-2688 MIL-PRF19500 2N3767 JANTX
Text: , TRANSISTOR, NPN, SILICON, POWER TYPE 2N3766 , 2N3767 JAN, JANTX, AND JANTXV This specification is approved , 100 60 80 6 6 2 2 4 4 -65 to +200 -65 to +200 7 7 2N3766 2N3767 1 , mA dc f = 10 MHz Max Min IC = 1 A dc IB = 0.1 A dc Type Min 2N3766 2N3767 20 20 , = 1 A dc IB = 0.1 A dc Type IC = 500 mA dc IB = 50 mA dc Min 2N3766 2N3767 Max , ; IC = 100 mA dc; pulsed (see 4.5.1) V(BR)CEO 2N3766 2N3767 60 80 Collector to emitter


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PDF MIL-PRF-19500/518C MIL-S-19500/518B 2N3766, 2N3767 MIL-PRF-19500. T0-66) 2N3766 C-2688 MIL-PRF19500 2N3767 JANTX
2N3766 MOTOROLA

Abstract: 2N3766 2N3741 MOTOROLA 2n3767 motorola 2N3767 2N3741 2h37 2N3740 motorola motorola 2n3766
Text: TECHNICAL DATA SEMICONDUCTOR 2N3766 2N3767 M E D IU M - P O W E R N P N S IL IC O N T R A N S I S T , -213AA Package Complementary to PNP 2N3740 ( 2N3766 ) and 2N3741 (2N3767) M A X IM U M R A TIN G S Rating C o , tu re R ange = 2 5°C Symbol VC E O «? 2N3766 i 60 80 1 2N3767 60 100 Unit V de V dc V , >7554 00044=10 2N3766 , 2N3767 fl I 7 " 3 3 -0*7 E L E C T R IC A L C H A R A C T E R IS T IC S , lle cto r-B a se C utoii C u rre n t (VCB " 80 y d c* * E - 0) tV cB - 100 Vdc, IE = 0) 2N3766 2H3767


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PDF 2N3766 2N3767 O-213AA 2N3740 2N3766) 2N3741 2N3767) 2N3766 MOTOROLA 2N3741 MOTOROLA 2n3767 motorola 2N3767 2N3741 2h37 2N3740 motorola motorola 2n3766
2002 - Not Available

Abstract: No abstract text available
Text: , please contact us. Search Results Part number search for devices beginning " 2N3766 " Semelab Home Datasheets are downloaded as Acrobat PDF files. Bipolar Products PRODUCT 2N3766 2N3766-JQR-B 2N3766SMD 2N3766SMD05 2N3766SMD05-JQR-B 2N3766SMD-JQR-B Polarity NPN NPN NPN NPN NPN NPN Package TO66 TO66


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PDF 2N3486" 2N3486 2N3486A 2N3486CSM 10/10m 200Hz
Not Available

Abstract: No abstract text available
Text: 2N3766+JAN Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.160 @I(C) (A) (Test Condition)500m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq10M @I(C) (A) (Test Condition) @V(CE) (V


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PDF 2N3766 Freq10M
2009 - 2N3766

Abstract: transistor 2N3766
Text: NPN SILICON TRANSISTOR Semelab Limited 2N3766 · LOW SATURATION VOLTAGE · HIGH GAIN CHARACTERISTICS · HERMETICALLY SEALED TO-66 METAL PACKAGE · SCREENING OPTIONS AVAILABLE · SWITCHING APPLICATIONS · MEDIUM POWER AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCEO VCBO Collector - Emitter Voltage Collector - Base Voltage VEBO Emitter - Base Voltage IC Collector , ://www.semelab.co.uk Document Number 8084 Issue 1 NPN SILICON TRANSISTOR 2N3766 ELECTRICAL CHARACTERISTICS


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PDF 2N3766 143mW/ O-213AA) 2N3766 transistor 2N3766
Not Available

Abstract: No abstract text available
Text: NPN SILICON TRANSISTOR Semelab Limited 2N3766 • LOW SATURATION VOLTAGE • HIGH GAIN CHARACTERISTICS • HERMETICALLY SEALED TO-66 METAL PACKAGE • SCREENING OPTIONS AVAILABLE • SWITCHING APPLICATIONS • MEDIUM POWER AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCEO VCBO VEBO IC IB PT Collector - Emitter Voltage Collector - Base Voltage Emitter - , electronics plc. Document Number 8084 Issue 1 NPN SILICON TRANSISTOR Semelab Limited 2N3766


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PDF 2N3766 143mW/Â 100mA O-213AA)
POWER TRANSISTORS 10A 400v pnp

Abstract: NPN Transistor 10A 400V to3 2N1489 pnp 400v 10a 2N1468 2N6350 2NXXXX 1526a 2N1400 2N6352
Text: /518A 12-E 2N3766 YES .YES YES /518A 10-A MIL-S- PAGE- 2NTYPE* JAN JAN TX JANTXV 19500 TABLE , 2N1486 2N1488 2N1490 60V 2N1714 2N1716 2N389 2N3418 2N3420 2N3766 65V 70V


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PDF T-33-Ã flES40aa D0D07Ã 19S00 2N389 /173A 2N424 2N1016B /102A POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 2N1489 pnp 400v 10a 2N1468 2N6350 2NXXXX 1526a 2N1400 2N6352
2N3820

Abstract: No abstract text available
Text: RF 2N3766 2N3767 2N3791 2N3792 2N3821 through 2N3823 2-5 2-5 2-6 2N4948 2N4949


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PDF 2N3743 2N3439 2N3440 2N3444S 2N3467 2N3468 2N34B5A 2N3486A 2N3715 2N3716 2N3820
2N1716

Abstract: 2N3738 2N3879 2N3767
Text: BIPOLAR NPN MESA POWER TRANSISTORS DEVICE TYPE PEAK c AMPS VCE (sat) max VOLTS PACKAGE bvceo VOLTS hFE min/max < o m < c @ ' b A A / T0-205 (T° -5) o 2N1714* 2N1715* 2N1716 2N1717* 60 100 60 100 0.75 0.75 0.75 0.75 20 min 20 min 40 min 40 min 0.2/5.0 0.2/5.0 0.2/5.0 0.2/5.0 2.0 2.0 2.0 2.0 0.2/0.02 0.2/0.02 0.2/0.02 0.2/0.02 nr ^ TO-213 (TO-66) - 2N3584* 2N3585* 2N3766 * 2N3767* 2N3738 2N3739* 2N3879" 300 400 60 80 225 300 75 5.0 5.0 1.0


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PDF T0-205 2N1714* 2N1715* 2N1716 2N1717* O-213 2N3584* 2N3585* 2N3766* 2N3767* 2N3738 2N3879 2N3767
Not Available

Abstract: No abstract text available
Text: 0043592 A P I E LE CTRONICS INC _. _13A0Q67 3 VI ELECTRONICS INC 13 DE J □□43Sc □OOODb? 2 ia A P I U W NPN and PNP Complementary Silicon Planar Power Transistors continued . A bPRA ,UE ClECTR C S'JQS OlARY 2A TO-5 TO-66 BV ceo TO-46 NPN PNP NPN PNP NPN PNP 60V 2N3766 2N3740 PG1050 PG2050 PG1001 PG2001 80V 2N3767 2N3741 PG1051 P G2051 PG1002 PG2002 100V PG1103 PG2103 PG1052


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PDF 13A0Q67 2N3766 2N3740 PG1050 PG2050 PG1001 PG2001 2N3767 2N3741 PG1051
MJ2250

Abstract: MJ2249
Text: MOTOROLA SC OIODES/OPTOÏ ^4 ÌmF | t , 3L . 7 2S S GG37T27 ì 6367255 MOTOROLA SC (DIODES/OPTO) 34C 37927 D SILICON P O W E R T R A N S IS T O R DICE (continuad) r - 3 3 -O/ DIE NO. LINE S O U R C E - 2C3767 - NPN PL500.31 This die provides performance equal to or better than that of the following device types: 2N3766 2N3767 MJ2249 MJ2250 Designed for driver, switching, and mediumpower amplifier applications. METALLIZATION - Top


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PDF GG37T27 2C3767 PL500 2N3766 2N3767 MJ2249 MJ2250 MJ2250
Not Available

Abstract: No abstract text available
Text: 2N3766+JANTX Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.160 @I(C) (A) (Test Condition)500m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq10M @I(C) (A) (Test Condition) @V(CE) (V


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PDF 2N3766 Freq10M
Not Available

Abstract: No abstract text available
Text: 2N3766+JANTXV Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.160 @I(C) (A) (Test Condition)500m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq10M @I(C) (A) (Test Condition) @V(CE) (V


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PDF 2N3766 Freq10M
2N3741 MOTOROLA

Abstract: 2N3585 MOTOROLA 2N3766 MOTOROLA 2N3583 MOTOROLA 2n6299 motorola 2N4910 2N6424 2N6424 MOTOROLA 2N4900 MOTOROLA 2n3584 motorola
Text: 350 2N6213 10/100 1 2.5 0.6 1 20 35 3 140 2N3441 25/100 0.5 0.2 25 4 60 2N3054.A 2N3766 2N6294


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PDF 2N4910 2N4898 2N4911 2N4899 2N4912 2N4900 2N3583 2N6420 2N3738 2N6424 2N3741 MOTOROLA 2N3585 MOTOROLA 2N3766 MOTOROLA 2N3583 MOTOROLA 2n6299 motorola 2N6424 MOTOROLA 2N4900 MOTOROLA 2n3584 motorola
2002 - Not Available

Abstract: No abstract text available
Text: 2N3766 Dimensions in mm (inches). 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. VCEO = 60V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX


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PDF 2N3766 O213AA) 30-Jul-02
2N1716

Abstract: 2N3584 NPN 2N3767 JANTX 2N3740 2N1716 JANTX TO-213
Text: * 2N3766" 2N3767* 2N3738 2N3739* 2N3879* 300 400 60 80 225 300 75 5.0 5.0 1.0 1.0 0.25 0.25 7.0


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PDF T0-205 O-213 2N1716 2N1717* 2N3584* 2N3585* 2N3766" 2N3767* 2N3738 2N3584 NPN 2N3767 JANTX 2N3740 2N1716 JANTX TO-213
2N4232

Abstract: 2n4236
Text: 2N4898 TYPE 2N4910 2N4231 2N3054 2N4911 2N3766 2N4232 2N4912 2N3767 2N4233 MIN 40 40 55 60 60 60 80


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PDF 2N4237 2N4238 2N4895 2N4896 2N4239 2N4897 2N4234 2N4235 2N4236 2N4232 2n4236
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