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Part Manufacturer Description Datasheet Download Buy Part
JANTXV2N3763 Microsemi Corporation Small Signal Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN
JANTX2N3763 Microsemi Corporation Small Signal Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN
JANS2N3763 Microsemi Corporation Transistor
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2N3763 Central Semiconductor Corp Avnet - $1.59 $1.39
2N3763 SCA Bristol Electronics 5 $4.48 $4.48
2N3763 Motorola Semiconductor Products Bristol Electronics 5 - -
2N3763 Continental Device India Ltd TME Electronic Components 900 $0.60 $0.24
JANTX2N3763 Microsemi Corporation Chip1Stop 7 $303.00 $277.00
JANTXV2N3763 Microsemi Corporation Chip1Stop 5 $393.00 $345.00
JX2N3763 NES Bristol Electronics 14 - -

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2N3763 datasheet (42)

Part Manufacturer Description Type PDF
2N3763 Central Semiconductor BJT, PNP, Silicon Epitaxial Transistor, IC 1.5A - Pol=PNP / Pkg=TO39 / Vceo=60 / Ic=1.5 / Hfe=20-80 / fT(Hz)=150M / Pwr(W)=1 Original PDF
2N3763 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=PNP / Pkg=TO39 / Vceo=60 / Ic=1.5 / Hfe=20-80 / fT(Hz)=150M / Pwr(W)=1 Original PDF
2N3763 Microsemi PNP Switching Silicon Transistor Original PDF
2N3763 Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=60 / Ic=1.5 / Hfe=20-80 / fT(Hz)=150M / Pwr(W)=1 Original PDF
2N3763 Semico Type 2N3763 Geometry 6706 Polarity PNP - Pol=PNP / Pkg=TO39 / Vceo=60 / Ic=1.5 / Hfe=20-80 / fT(Hz)=150M / Pwr(W)=1 Original PDF
2N3763 Advanced Semiconductor Silicon Transistors Scan PDF
2N3763 Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N3763 Motorola Power Transistor Selection Guide Scan PDF
2N3763 Others Transistor Shortform Datasheet & Cross References Scan PDF
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2N3763 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
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2N3763 Others Semiconductor Master Cross Reference Guide Scan PDF
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2N3763 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - 2N3762

Abstract: TO206AB 2N3763S
Text: TECHNICAL DATA 2N3762, 2N3762L JAN, JTX, JTXV 2N3763 , 2N3763L JAN, JTX, JTXV 2N3764 JAN, JTX , Voltage Collector Current Symbol VCEO VCBO VEBO IC 2N3762, L 2N3764 40 40 5.0 1.5 2N3763 , L 2N3765 60 60 Unit Vdc Vdc Vdc Adc 2N3762, 2N3763 TO-39 (TO-205AD) 2N3762, L(1) 2N3763 , L , TJ, Tstg Symbol 1.0 2N3764 (2) 2N3765 0.5 W 0 -55 to +200 Max. C 2N3762L, 2N3763L TO-5 THERMAL CHARACTERISTICS Unit 2N3762, L 2N3763 , L RJC 1) Derate linearly at 5.71 mW/0C for TA > +250C


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PDF 2N3762, 2N3762L 2N3763, 2N3763L 2N3764 2N3765 MIL-PRF-19500/396 2N3764 2N3762 TO206AB 2N3763S
2N3762

Abstract: No abstract text available
Text: 2N3762L Qualified Level 2N3763 2N3763L 2N3764 JAN JANTX JANTXV 2N3765 MAXIMUM RATINGS , Current 2N3762* 2N3764 2N3763 * 2N3765 40 40 60 60 VCEO VCBO VEBO IC 5.0 1.5 2N3762* 1 2N3763 * Total Power Dissipation @ TA = +250C Operating & Storage Junction Temp. Range THERMAL CHARACTERISTICS Characteristics 0.5 Vdc Vdc Vdc Adc TO-39* (TO-205AD) 2N3762, 2N3763 2N3764 2 2N3765 1.0 Unit PT -55 to +200 Top, Tstg Symbol C Max. 2N3762* 2N3763


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PDF MIL-PRF-19500/ 2N3762 2N3762L 2N3763 2N3763L 2N3764 2N3765 2N3762* 2N3763* 2N3762
2002 - 2n3762

Abstract: 2N3765 2N3763 2N3762L 2N3763L 2N3764
Text: 2N3762L Qualified Level 2N3763 2N3763L 2N3764 JAN JANTX JANTXV 2N3765 MAXIMUM RATINGS , Current 2N3762* 2N3764 2N3763 * 2N3765 40 40 60 60 VCEO VCBO VEBO IC 5.0 1.5 2N3762* 1 2N3763 * Total Power Dissipation @ TA = +250C Operating & Storage Junction Temp. Range THERMAL CHARACTERISTICS Characteristics 0.5 Vdc Vdc Vdc Adc TO-39* (TO-205AD) 2N3762, 2N3763 2N3764 2 2N3765 1.0 Unit PT -55 to +200 Top, Tstg Symbol C Max. 2N3762* 2N3763


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PDF MIL-PRF-19500/396 2N3762 2N3762L 2N3763 2N3763L 2N3764 2N3765 2N3762* 2N3763* 2n3762 2N3765 2N3763 2N3762L 2N3763L 2N3764
2001 - 2N3762

Abstract: 2N3763
Text: DATA SHEET 2N3762 2N3763 PNP SILICON TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3762 and 2N3763 types are Silicon PNP Epitaxial Planar Transistors designed for core driver applications. MAXIMUM RATINGS (TA=25°C) SYMBOL 2N3763 UNITS VCBO VCEO VEBO IC PD PD , noted) 2N3762 MIN MAX 2N3763 MIN MAX VCE=½Rated VCBO, VEB=2.0V VCE=½Rated VCBO, VEB , 1.40 V V V V V V V V V R1 2N3762 / 2N3763 PNP SILICON TRANSISTOR ELECTRICAL


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PDF 2N3762 2N3763 2N3762 2N3763 100mA
2N3763U4

Abstract: 2n3762 2N3763 2N3763UA 2N3762L 2N3763L 2N3764 2N3762UA
Text: , SILICON, SWITCHING, TYPES 2N3762, 2N3762L, 2N3762U4, 2N3762UA, 2N3763 , 2N3763L , 2N3763U4 , 2N3763UA , Types 2N3762, L 2N3762U4 2N3762UA 2N3763 , L 2N3763U4 2N3763UA 2N3764 2N3765 PT TC = +25°C , IC V dc 2N3762, L, 2N3762U4, 2N3762UA, 2N3764 2N3763 , L, 2N3763U4 , 2N3763UA , 2N3765 VCBO V , and 2N3763L (TO-5), 2N3762 and 2N3763 (TO-39), figure 2 2N3764 and 2N3765 (TO-46), figure 3 (U4 , |hFE| 2N3763 2N3763L 2N3765 1.8 6.0 1.5 6.0 See figure 20 See figure 21 pF


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PDF MIL-PRF-19500/396K MIL-PRF-19500/396J 2N3762, 2N3762L, 2N3762U4, 2N3762UA, 2N3763, 2N3763L, 2N3763U4, 2N3763UA, 2N3763U4 2n3762 2N3763 2N3763UA 2N3762L 2N3763L 2N3764 2N3762UA
2010 - 60N60

Abstract: No abstract text available
Text: 2N3763 Chip: 5.0V; 1.5A; geometry 6706; polarity PNP 7.50 Transistors . http://store.americanmicrosemiconductor.com/ 2n3763.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N3763 2N3763 C hip: 5 .0 V; 1 .5 A; geo m et ry 6 7 0 6 ; po larit y PNP , ; polarity PNP 7.50 Transistors . http://store.americanmicrosemiconductor.com/ 2n3763.html 2 of 2 4 , 2N3763 $ 9.38 $ 7.50 $ 1.88 Total Price $ 7.50 Company Testimonials Store Policies Contact Us


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PDF 2N3763 com/2n3763 2N3763 60N60
7ka code

Abstract: 2N3762 2N3762L 2N3763 2N3763L 2N3764 2N3765 396h ic
Text: , SWITCHING TYPES 2N3762, 2N3762L, 2N3763 , 2N3763L , 2N3764, AND 2N3765 JAN, JANTX, JANTXV, JANS, JANHC AND , type. 1.2 Physical dimensions. See figure 1, 2N3762L and 2N3763L (TO-5), 2N3762 and 2N3763 (TO , VEBO IC TOP and TSTG RJC W 2N3762 2N3762L 2N3763 2N3763L 2N3764 2N3765 PT TA = , MHz 20 Pulse response Cobo f = 100 MHz VCE = 10 V dc IC = 50 mA dc 2N3763 2N3763L , 2N3763L (TO - 5), 2N3762 and 2N3763 (TO - 39), 2N3764 and 2N3765 (TO - 46). 3 MIL-PRF-19500/396H


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PDF MIL-PRF-19500/396H MIL-PRF-19500/396G 2N3762, 2N3762L, 2N3763, 2N3763L, 2N3764, 2N3765 MIL-PRF-19500 7ka code 2N3762 2N3762L 2N3763 2N3763L 2N3764 2N3765 396h ic
Not Available

Abstract: No abstract text available
Text: CHARACTERISTICS 2N3762 2N3764 2N3763.2N3765 2N3762.2N3764 2N3763 ,2N3765 V(BR)EB0 'CEX 2N3762,2N3764 2N3763 , 2N3765 , Collector Cutoff Currant (VCB " 20 Vdc) (VCB-30V dc) 2N3762,2N3764 2N3763.2N3765 Symbol 'CBO hFE 40 IX 100 , 2N3762, 2N3764 2N3763.2N3765 35 40 40 30 20 30 20 20 140 120 80 (Ic = 1 5 Adc, VCE = 5.0 VdcjO , SEMICONDUCTOR m TECHNICAL DATA h h h b m h b h h h m m » -« - 2N3762 2N3763 2N3764 , VCBO VEBO `C PT 2N3762 2N3764 40 40 5.0 1.5 1.0* 5.71 -55 to 200 2N3763 2N3765 60 60 5.0 1.5 0.5


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PDF 2N3762 2N3763 2N3764 2N3765 2N3765
2N3762

Abstract: 2N3763 MOTOROLA
Text: MOTOROLA SC XSTRS/R 2N3762 2N3764 40 40 12E 2N3763 2N3765 60 60 5.0 1.5 TO-39 2N3762 2N3763 TO-46 2N3764 2N3765 0.5 2.86 2.0 11.4 D I b 3b7a5M 00ab3t,7 fl | T - 3 7 -/ r , Vdc Adc 2N3762 2N3763 JA N , JT X , J T X V AVAILABLE C A S E 79-04, S T Y L E 1 TO-39 (TO , 2N3762 2N3763 44 175 2N3764 2N3765 88 350 U n it °C/W °C/W PIMP SILICO N E LEC TR IC A L C H A R , 2.0 Vdc) V dc, T a * 100°C) vd c) v d c , t a = io o °c) 2N3762, 2N3764 2N3763 , 2N3765 'b l 2N3762


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PDF 2N3762 2N3764 2N3763 2N3765 00ab3t 2N3763 MOTOROLA
1999 - 2N3763

Abstract: No abstract text available
Text: Data Sheet No. 2N3763 Generic Part Number: 2N3763 Type 2N3763 Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/396 Features: · · · · General-purpose transistor for switching and amplifier applicatons. Housed in a TO-39 case. Also available in chip form using the 6706 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/396 which Semicoa , Temperature o C o C Data Sheet No. 2N3763 Electrical Characteristics TC = 25oC unless


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PDF 2N3763 MIL-PRF-19500/396 MIL-PRF-19500/396 -55oC MIL-S-19500/396D 2N3763
2004 - Not Available

Abstract: No abstract text available
Text: Submit ¡ ¡ 2N3763 Availability Buy 2N3763 at our online store ! 2N3763 Information Cate , 2N3763 Specifications Milita ry/High-R e l : N V(BR )C EO (V) : 60 V(BR )C BO (V) : 60 I(C ) Max . (A


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PDF 2N3763
1999 - 2N3467

Abstract: 2n3762 chip type geometry 2N37
Text: Data Sheet No. 2C3762 Chip Type 2C3762 Geometry 6706 Polarity PNP Generic Packaged Parts: 2N3467, 2N3467L, 2N3468, 2N3468L, 2N3762, 2N3762L, 2N3763 , 2N3763L , 2N3764, 2N3765 B E 30 MILS 30 MILS Chip type 2C3762 by Semicoa Semiconductors provides performance similar to these devices. Part , applications. Features: Radiation graphs available 2N3467, 2N3467L, 2N3468, 2N3468L, 2N3762, 2N3762L, 2N3763 , 2N3763L , 2N3764, 2N3765 Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip


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PDF 2C3762 2C3762 2N3467, 2N3467L, 2N3468, 2N3468L, 2N3762, 2N3762L, 2N3763, 2N3763L, 2N3467 2n3762 chip type geometry 2N37
Not Available

Abstract: No abstract text available
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: (973) 376-2922 (212)227-6006 FAX: (973) 376-8960 U.SA 2N3763 2N3763 Polarity PNP Features: • General-purpose transistor for switching and amplifier applicatons. • Housed in a TO-39 case. • Also available in chip form using the 6706 chip geometry. Maximum Ratings Tc = 25°C unless otherwise specified Symbol Rating Unit Collector-Emitter Voltage VCEO 60 V Collector-Base Voltage VCBO 60


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PDF 2N3763
Not Available

Abstract: No abstract text available
Text: p semcofl ¿888888888 |M iwi B f i HBf m sssBP .f rHHHHHHHH h. M iin nnnn tt h hhhhhk. > >itH 2N3763 Type 2N3763 G eom etry 6706 Polarity PNP Qual Level: JAN - JA NTXV REF: M IL-P R F -19 5 0 0 /3 9 6 Features: • General-purpose transistor for switching and amplifier applicatons. • Housed in a TO-39 case. • Also available in chip form


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PDF 2N3763 MiL-PRF-19500/396 MIL-S-19500/396D
Not Available

Abstract: No abstract text available
Text: Data Sheet No. 2C 3762 SEMICONDUCTORS G e n e ric P a cka g e d P arts: Chip Type 2C3762 Geometry 6706 Polarity PNP 2N 3467, 2N 3467L, 2N 3468, 2N 3468L, 2N 3762, 2N 3762L, 2N 3763, 2N 3763L, 2N 3764, 2N 3765 1 Chip type 2C3762 by Semicoa Semi­ conductors provides performance similar to these devices. Part Numbers: 2N3467, 2N3467L, 2N3468, 2N3468L, 2N3762, 2N3762L, 2N3763 , 2N3763L , 2N3764, 2X3765 Product Summary: APPLICATIONS: Designed for general purpose switching and


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PDF 2C3762 3467L, 3468L, 3762L, 3763L, 2C3762 2N3467, 2N3467L, 2N3468, 2N3468L,
Not Available

Abstract: No abstract text available
Text: 2N3763+JANTX Transistors Si PNP Power BJT Military/High-RelY V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.80 @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)1.5 f(T) Min. (Hz) Transition Freq150M @I(C) (A) (Test Condition) @V(CE) (V) (Test


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PDF 2N3763 Freq150M time35n
SILICON SMALL-SIGNAL DICE

Abstract: No abstract text available
Text: MOTOROLA SC {D IO DES /OPTO} 34 D I b3fc725S D037TÌD SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 34C 37990 T- 3 7 " ( S ' DIE NO. - PNP LINE SOURCE - DSL60 2C3762 2N3762 2N3763 2N3764 2N3765 (SÌ This die provides performance similar to that of the following device types: Designed for core driver applications. Backside Collector METALLIZATION - Top . Al Back . Au BACKSIDE GOLD


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PDF b3fc725S D037T DSL60 2C3762 2N3762 2N3763 2N3764 2N3765 SILICON SMALL-SIGNAL DICE
Not Available

Abstract: No abstract text available
Text: 2N3763+JANTXV Transistors Si PNP Power BJT Military/High-RelY V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.80 @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)1.5 f(T) Min. (Hz) Transition Freq150M @I(C) (A) (Test Condition) @V(CE) (V) (Test


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PDF 2N3763 Freq150M time35n
2002 - 150M

Abstract: 2N3763
Text: 2N3763 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021) dia. IC = 1.5A 5.08 (0.200) typ. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications


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PDF 2N3763 O205AD) 1-Aug-02 150M 2N3763
2002 - Not Available

Abstract: No abstract text available
Text: 2N3763 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 60V 5.08 (0.200) typ. IC = 1.5A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS


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PDF 2N3763 O205AD) 19-Jun-02
Not Available

Abstract: No abstract text available
Text: 2N3763+JAN Transistors Si PNP Power BJT Military/High-RelY V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.80 @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)1.5 f(T) Min. (Hz) Transition Freq150M @I(C) (A) (Test Condition) @V(CE) (V) (Test


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PDF 2N3763 Freq150M time35n
2002 - Not Available

Abstract: No abstract text available
Text: 2N3763 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 60V 5.08 (0.200) typ. IC = 1.5A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS


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PDF 2N3763 O205AD) 17-Jul-02
1999 - 1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Text: 2N2907AUB 2N2919 2N3485A 2N3486A 2N3498 2N3762 2N3763 2N3764 2N4930 2N4931 2N5581 2N6988


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PDF MIL-PRF-19500 2N720A 2N1131 2N1132 2N1893 JANHC2N2222A JANKC2N2222A JANH3057A 2N3250A 2N3251A 1N6762 JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
1999 - MIL-PRF-19500

Abstract: 2N4033 2N3055 2N5038 JANS 2N5415 mil-prf-19500/JANTXV2N6341 MIL-PRF-19500/391 MIL-PRF-19500/2n7588 MIL-PRF-19500/336 2n2222au
Text: Mil-Prf-19500/408 -2N3716 Mil-Prf-19500/396 -2N3762 Mil-Prf-19500/396 - 2N3763 Mil-Prf-19500/512 -2N4029


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PDF Mil-Prf-19500 Mil-Prf-19500/251 -2N2219 -2N2219A -2N2219AL Mil-Prf-19500/255 -2N2222A 2N4033 2N3055 2N5038 JANS 2N5415 mil-prf-19500/JANTXV2N6341 MIL-PRF-19500/391 MIL-PRF-19500/2n7588 MIL-PRF-19500/336 2n2222au
2N5146

Abstract: 1000 volt pnp transistor 2N3444 2N3252 SP3725QDB 2N3468 2N3467 2N3245 2N3244 2N5022
Text: /100 180 15 45 105 TO-39 2N3763 PNP 1000 60 60 5 20/80 1000 0.9 1000/100 150 15 45 105 TO-39 2N3764


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PDF SP3763Q0 SP3763QF O-116 SP3725QDB SP34G7ADB O-116 VC2N3737 2N3762 2N3763 2N5146 1000 volt pnp transistor 2N3444 2N3252 2N3468 2N3467 2N3245 2N3244 2N5022
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