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2N3724 New Jersey Semiconductor Products, Inc. Bristol Electronics - -
2N3724 TRANSITION Bristol Electronics 14 $1.69 $1.10
2N3724 Fairchild Semiconductor Corporation Bristol Electronics 600 $1.69 $0.47
2N3724 STMicroelectronics Chip One Exchange - -
2N3724A New Jersey Semiconductor Products, Inc. Bristol Electronics - -

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2N3724 datasheet (69)

Part Manufacturer Description Type PDF
2N3724 Central Semiconductor NPN SILICON TRANSISTOR Original PDF
2N3724 Continental Device India NPN HIGH VOLTAGE SILICON SWITCHING TRANSISTORS Original PDF
2N3724 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.5 / Hfe=60-150 / fT(Hz)=300M / Pwr(W)=0.8 Original PDF
2N3724 Central Semiconductor BJT, NPN, Silicon Epitaxial Transistor, IC 1.2A - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.5 / Hfe=60-150 / fT(Hz)=300M / Pwr(W)=0.8 Scan PDF
2N3724 Central Semiconductor NPN METAL-CAN SATURATED SWITCH / LOW NOISE LEVEL AMPLIFIER Scan PDF
2N3724 Crimson Semiconductor Transistor Selection Guide Scan PDF
2N3724 Fairchild Semiconductor NPN small signal high current high speed switch. - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.5 / Hfe=60-150 / fT(Hz)=300M / Pwr(W)=0.8 Scan PDF
2N3724 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N3724 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
2N3724 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
2N3724 Ferranti Semiconductors Shortform Data Book 1971 Scan PDF
2N3724 General Diode Transistor Selection Guide Scan PDF
2N3724 General Transistor Small Signal Transistor Selection Guide Scan PDF
2N3724 ITT Semiconductors Semiconductor Summary 1969 Scan PDF
2N3724 Micro Electronics Semiconductor Devices Scan PDF
2N3724 Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N3724 Motorola European Master Selection Guide 1986 Scan PDF
2N3724 Others Basic Transistor and Cross Reference Specification Scan PDF
2N3724 Others Transistor Shortform Datasheet & Cross References Scan PDF
2N3724 Others Basic Transistor and Cross Reference Specification Scan PDF

2N3724 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - 2N3724

Abstract:
Text: 2N3724 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. = 2N3724 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N3724 at our online store! 2N3724 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N3724 Information Did you Know , for Parts Request a Quote Test Houses 2N3724 Specifications Military/High-Rel : N V(BR)CEO (V


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PDF 2N3724 2N3724 STV3208 LM3909N LM3909
2N3725

Abstract:
Text: , SILICON, SWITCHING, TYPES 2N3724 , 2N3724L , 2N3724UB , 2N3725, 2N3725L, 2N3725UB, JAN, JANTX, JANTXV, JANS , 1 2N3724 2N3724L 2N3725, 2N3725L Vce = 7V, Ic = .8 A 2N3724UB and 2N3725UB Vce = 11V, Ic = .5 A Test 2 2N3724 2N3724L 2N3725, 2N3725L 2N3724UB and 2N3725UB 3.0 Vce = 20 V, Ic = .25 A Test 3 2N3724 2N3724L , 2N3724UB Vce = 30 V, Ic = .11 A 2N3725, 2N3725L 2N3725UB , 1 50 80 30 50 6.0 6.0 -65 to +200 -65 to +200 Types 2N3724 2N3725 2N3724L


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PDF MIL-PRF-19500/728C MIL-PRF-19500/728B 2N3724, 2N3724L, 2N3724UB, 2N3725, 2N3725L, 2N3725UB, MIL-PRF-19500. 2N3725 2N3724
2010 - 2N3725

Abstract:
Text: 2N3724 2N3725 2N3725A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3724 , 2N3725, 2N3725A types are Silicon NPN Planar Epitaxial , TJ, Tstg 2N3724 50 30 0.8 3.5 2N3725 2N3725A 80 80 50 50 6.0 1.2 1.75 0.8 1.0 3.5 5.0 -65 to +200 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3724 2N3725 , V V V V V V V V V V V V R1 (5-December 2010) 2N3724 2N3725 2N3725A NPN SILICON


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PDF 2N3724 2N3725 2N3725A 2N3724, 2N3725, 2N3725A 2N3725 500mA, transistor 2N3725 2N3724
2N3724

Abstract:
Text: ) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors 2N3724 2N3725 2N3725A NPN SILICON TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3724 , 2N3725 , speed switching applications. MAXIMUM RATINGS (TA = 25°C) SYMBOL 2N3724 2N3725 2N3725A UNITS , CHARACTERISTICS (TA = 25°C unless otherwise noted) 2N3724 2N3725 2N3725A SYMBOL TEST CONDITIONS , 50mA = 500mA, lBi =lB2 = 50mA = 1 .OA, lBi =IB2 = 100mA = 1 .OA, IB1 =IB2 = 100mA 2N3724 MIN MAX 0.76


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PDF 2N3724 2N3725 2N3725A 2N3724, 2N3725, 2N3725A 2N3724 Dissipation00MHz transistor 2N3725
2N3724

Abstract:
Text: Continental Device India Limited 2N3724_25Rev270901 C-120 Naraina Industrial Area, New Delhi 110 028 , SILICON SWITCHING TRANSISTORS 2N3724 2N3725 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO 2N3724 30 2N3725 50 UNITS V Collector , * IC=10mA, IB=0 2N3724 >30 2N3725 >50 UNITS V Collector Emitter Voltage VCES IC , of 4 NPN HIGH VOLTAGE SILICON TRANSISTORS 2N3724 2N3725 TO-39 Metal Can Package


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PDF ISO/TS16949 2N3724 2N3725 2N3724 25Rev270901 C-120 2N3725 NPN/acsl 086 s
complement to 2n3700

Abstract:
Text: of 219° C/W (derating factor of 4.56 mW/°C) for the 2N3724. 2N3725, and 485° C/W (derating factor , i fairchild semiconductor a4 34^74 dd57ssl 5 3469674 FAIRCHILD SEMICONDUCTOR 84D 27556 D M —■2N3724 , Speed Switches • Vceo . 30 V (Min) ( 2N3724 , 2N4013), 50 V (Min) (2N3725, 2N4014) • VcEteati . • • 0.65 V (Max) @ 800 mA, 0.75 V (Max) @ 1.0 A ( 2N3724 , 2N4013) • hFE . 60-150 @ 1.0 A ( 2N3724 , ) PACKAGE 2N3724 2N3725 2N4013 2N4014 TO-5 TO-5 TO-18 TO-18 Temperatures Storage Temperature -65° C


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PDF 2N3253 2N3253 complement to 2n3700 2N3725 TA100-F curve set t144 FTS03904 2N3724 2N3701 tl 4013 T139
2n3724

Abstract:
Text: Continental Device India Limited 2N3724_25Rev270901 C-120 Naraina Industrial Area, New Delhi 110 028 , Certified Manufacturer NPN HIGH VOLTAGE SILICON SWITCHING TRANSISTORS 2N3724 2N3725 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO 2N3724 30 , SYMBOL TEST CONDITION VCEO* IC=10mA, IB=0 2N3724 >30 2N3725 >50 UNITS V Collector Emitter , Page 1 of 4 NPN HIGH VOLTAGE SILICON TRANSISTORS 2N3724 2N3725 TO-39 Metal Can Package


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PDF 2N3724 2N3725 2N3724 25Rev270901 C-120 2N3725
2N3724

Abstract:
Text: SGS-THOMSON R!tlD(EæilLI(g'iri©iD(SS 2N3724 HIGH-CURRENT SWITCH D E S C R IP T IO N The 2N3724 is , (/) 1 January 1989 (Q S torage and Junction T em pe rature - 1/5 2N3724 TH E R M A L , 2N3724 Switching Characteristics. Switching Characteristics. Test Circuit for to n , toff. PU , < 2 % < 1.0 ns Z in > 100 KW ^ 7 # 6siieR®iiLii£irR®(iaies T SGS-THOMSON 3/5 2N3724 , L 45° (typ.) P008B 4/5 ^ 7# 7 SGS-THOMSON raeRoaLieTfRwes 2N3724 Information


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PDF 2N3724
1994 - 2N3724

Abstract:
Text: 2N3724 HIGH-CURRENT SWITCH DESCRIPTION The 2N3724 is a silicon planar epitaxial transistor in TO , Junction Temperature Value 50 50 30 6 1 0.8 3.5 ­ 65 to 200 Unit V V V V A W W °C 1/5 2N3724 THERMAL , cycle = 1 %. * See test circuit. 2/5 2N3724 Switching Characteristics. Switching , % TO OSCILLOCOPE : tr < 1.0 ns ZIN 100 KW 3/5 2N3724 TO39 MECHANICAL DATA mm DIM. MIN , . 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch D G I H E F A L B P008B 4/5 2N3724


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PDF 2N3724 2N3724
2N3725

Abstract:
Text: NSQ 2N3724 Ic = 10 MAdc, IE = 0 NSQ 2N3725 ^(BR)CBO 50 70 Vdc Emitter-Base Breakdown Voltage Ic = 0, IE = 10 nAdc ^(BR)EBO 6.0 Vdc Collector Cutoff Current VCB = 40Vdc, IE= 0 NSQ 2N3724 VCB = 50Vdc , Vdc NSQ 2N3724 Ic= 500 mAdc, VCE = 50 mAdc NSQ 2N3725 Ic = 1.0 Adc, VCE = 5.0 Vdc hFE 60 25 35 25 250


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PDF NSQ3724 NSQ3725 O-116 NSQ3725 Junc10 300jis, 2N3725 2N3724 dc iris driver
Not Available

Abstract:
Text: 3QE T m > 7^5^537 O Q B Il? 1 7 ■1 } ^ f X ^ S - l 'J SGS-THOMSON 2N3724 ^ o o § @ B |o ir iR ]© [M o e s S G S-THOMSON HIGH-CURRENT SWITCH DESCRIPTION The 2N3724 is a silicon planar epitaxial transistor in TO -39 metal case. It is a high-current switch used for memory applications requiring breakdown vol­ tages up to 30 V and operating currents to 1 A. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol P a ra m e te r Unit Collector-base


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PDF 2N3724 2N3724
2N3724A

Abstract:
Text: 2N3724 , 2N3724A. 2N372S. 2N372SA N-P-N SILICON TRANSISTORS ^switching characteristics at 25°C free-air , TYPES 2N3724 , 2N3724A , 2N3725. 2N3725A N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L-S 7 3 1 , · D A L L A S . T E X A S 7S 22 2 TYPES 2N3724 , 2N3724A , 2N372S, 2N3725A N-P-N SILICON , LLA S . TE X A S 75223 TYPES 2N3724 , 2N3724A , 2N3725. 2N3725A N-P-N SILICON TRANSISTORS ·PA R A M , ( 2N3724A , 2N3725A) ' mechanical data TH E C O LL EC T O R IS IN E L E C T R IC A L CONTACT WITH THE


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PDF 2N3724, 2N3724A, 2N3725. 2N3725A 2N3725A) 725/i 2T1372E 2N3724A n37 transistor 2N3724 3724A n3714
transistor bd320c

Abstract:
Text: 150 7 -5 10 — 500 30 45 150 800 TO-39 2N3724 50 30 500 0-2 100 10 60 150 100 35 60 500 800 TO , T018 2N3512 60 35 — 0-4 150 7 -5 10 — 500 30 45 150 800 T039 2N3724 50 30 500 0 -2 100 10 60 150


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PDF BSX59 BSX60 BSX61 2N3261 2N3512 BD320C BD321A BD321B BD321C BD322A transistor bd320c 2N3725 BD320A 2N3724
2n3252

Abstract:
Text: M O T O R O L A SC -CDIODES/OPTO} 34 DE | b3t,7SSS B 7 T ö c i T f 6367255 MOTOROLA SC (DIO DES/O PTO ) 34C 37989 D SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) DIE NO. - NPN LINE SOURCE - DSL27 2C3724 D Ol This die provides performance similar to that of the following device types: 2N2410* 2N2476* 2N2537* 2N2538* 2N3252 2N3253 2N3444* 2N3724 2N3725 2N3734 2N3735 2N3736 2N3737 2N4013 2N4014 2N5845.A 2N5859 2N5861 MM3734* MM3735 MM3736 MM3737 MM5189


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PDF DSL27 2C3724 2N2410* 2N2476* 2N2537* 2N2538* 2N3252 2N3253 2N3444* 2N3724 2N5859 transistor 2N5859 2N3725 MOTOROLA 2n3736 2N5845 2n3444 2N2537 2N3735
1501A50

Abstract:
Text: 2N4403 MMBT3906 MMBT4403 PN2907 PN4121 PN4122 TN2905 30 2N3724 PN4917 25 PN3638 PN3638A 15 2N2369 2N2369A


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PDF TN2219A T0-237 T0-39 T0-92 O-236* 1501A50 2N4403 NATIONAL SEMICONDUCTOR National Pn2907 pN3638A T0237 transistors tn2905
2002 - 2N3724

Abstract:
Text: 2N3724 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021) dia. IC = 0.5A 5.08 (0.200) typ. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications


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PDF 2N3724 O205AD) 1-Aug-02 2N3724
2002 - Not Available

Abstract:
Text: 2N3724 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 30V 5.08 (0.200) typ. IC = 0.5A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS


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PDF 2N3724 O205AD) 17-Jul-02
2002 - Not Available

Abstract:
Text: 2N3724 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 30V 5.08 (0.200) typ. IC = 0.5A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS


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PDF 2N3724 O205AD) 19-Jun-02
2N2369 SOT-23

Abstract:
Text: 0.3 50 5.0 450 T0-92(92) 625 TN2905 45 100 150 100 150 0.4 150 15 200 T0-237(91) 850 30 2N3724 35


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PDF S0113Ã TN2219A T0-237 2N3467 2N3905 T0-92 2N3906 2N4402 2N2369 SOT-23 pn4122 2N708 TN2905 MMBT3906 MMBT4403 NPN switching transistor 2N4403
2N6369

Abstract:
Text: 100/10 350 18 2N3724 800 30 60/150 100 0.20 100/10 300 60* 2N3725 800 50 60/150 100 0.52 500«) 300


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PDF 2N3962 2N3963 2N3964 2N3965 2N930 2N2483 2N2484 ULTR60 2N708 2N914 2N6369 to18 npn 2N3209 2n3013 2N2894
2N3019A

Abstract:
Text: NEW ENGLAND SEMICONDUCTOR NPN TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE TO-5 T0205AD DEVICE TYPE 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N2270 2N3019A 2N3020 2N3053A 2N3114 2N3300 2N3498A 2N3499A 2N3500A 2N3501A 2N3724 2N3725 2N5681 2N5682 VcEO Ic (sus) (max) VOLTS AMPS 40h 50h 50h 80 30 40 30 40 45 80 80 60 150 30 100 100 150 150 30 50 100 120 0.8 1.0 0.5 0.5 0.8 0.8 0.8 0.8 1.0 1.0 1.0 0.7 0.2 0.5 0.5 0.5 0.3 0.3 0.5 0.5 1.0 1.0 hpE SMALL SIGNAL @ IC/ ^ C E min/max @


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PDF O-5/TO205AD/TO-39 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N3019A 2N3501A
2N3019A

Abstract:
Text: 0.4@150/15 8 150 2N3501A 150 0.3 100/300@150/10 0.4@150/15 8 150 2N3724 30 0.5 35@500/l 0.42@500/50 10


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PDF O-5/TO205AD/TO-39 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N3019A 2N3114 2N5682 transistor 2N3725 2N3501 JANTX TRANSISTOR 2n697 2N1711 to3 2N3020
Not Available

Abstract:
Text: SbE ] ■> c n7DS?fl 0007003 007 ■ZETB CORE DRIVERS ZETEX SEMICONDUCTORS TABLE 10 - NPN SILICON PLANAR HIGH SPEED CORE DRIVER T R A N SIST O R S The devices show n in this table are designed for use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is of prime importance. V CE0 2N3725 BSX59 BSX60 BSX61 2N3512 2N3724 2N3261 at V mA V 'c mA 80 70 70 70 60 50 40 40 45 30 45 35 30


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PDF 2N3725 BSX59 BSX60 BSX61 2N3512 2N3724 2N3261 BD321C-18 BD322A BD322B
Not Available

Abstract:
Text: 300/30 360 20 30/120 30 0.18 100/10 350 350 18 2N3014 2N3724 800 30


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PDF 2N3962 2N3963 2N3964 2N3965 2N708 2N914 2N2368 2N6369 2N2369A 2N3013
BD320C

Abstract:
Text: 150 7.5 10 - 500 30 45 150 800 TO-39 2N3724 50 30 500 0.2 100 10 60 150 100 35 60 500 800 TO


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PDF 2N3725 BSX59 BSX60 BSX61 2N3512 BD320C BD321A BD321B BD321C BD321A-18 2N3261 BD320B BD320A 2N3724
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