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2N3716 Central Semiconductor Corp Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
2N3716 LEAD FREE Central Semiconductor Corp TRANS NPN 80V 10A TO-3
JAN2N3716 Microsemi Corporation Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-204AA, 2 PIN
JANTX2N3716 Microsemi Corporation Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-204AA, 2 PIN
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2N3716 Central Semiconductor Corp Future Electronics 725 $5.08 $3.00
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2N3716 Motorola Semiconductor Products Bristol Electronics 6 - -
2N3716 Central Semiconductor Corp Avnet - $3.09 $2.79
2N3716 JANTX SPC Technology Bristol Electronics 30 - -
JAN2N3716 Cobham Semiconductor Solutions Avnet - $40.89 $35.89
JAN2N3716 Motorola Semiconductor Products Bristol Electronics 10 $7.84 $5.10
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JANTX2N3716 Microsemi Corporation New Advantage Corporation 3 $135.58 $125.90
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JANTX2N3716 Cobham PLC Chip1Stop 30 $51.20 $42.99
JANTXV2N3716 Microsemi Corporation Chip1Stop 49 $75.00 $58.00
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2N3716 datasheet (72)

Part Manufacturer Description Type PDF
2N3716 Comset Semiconductors Epitaxial-Base NPN - PNP - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=50-150 / fT(Hz)=4M / Pwr(W)=150 Original PDF
2N3716 Microsemi NPN High Power Silicon Transistor Original PDF
2N3716 On Semiconductor General Purpose Bipolar Transistor, NPN, 80V, TO-3, 2-Pin - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=50-150 / fT(Hz)=4M / Pwr(W)=150 Original PDF
2N3716 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=50-150 / fT(Hz)=4M / Pwr(W)=150 Original PDF
2N3716 Advanced Semiconductor Silicon Transistors Scan PDF
2N3716 Boca Semiconductor SILICON NPN POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=50-150 / fT(Hz)=4M / Pwr(W)=150 Scan PDF
2N3716 Central Semiconductor BJT, NPN, Power Transistor, IC 10A - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=50-150 / fT(Hz)=4M / Pwr(W)=150 Scan PDF
2N3716 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan PDF
2N3716 Diode Transistor TO-3 / Various Transistor Selection Guide Scan PDF
2N3716 Diode Transistor 35 to 500V Transistor Selection Guide Scan PDF
2N3716 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
2N3716 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N3716 General Diode Transistor Selection Guide Scan PDF
2N3716 General Transistor Power Transistor Selection Guide Scan PDF
2N3716 Mospec POWER TRANSISTORS(10A,150W) - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=50-150 / fT(Hz)=4M / Pwr(W)=150 Scan PDF
2N3716 Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N3716 Motorola The European Selection Data Book 1976 Scan PDF
2N3716 Motorola European Master Selection Guide 1986 Scan PDF
2N3716 Motorola 10A Power Transistors Silicon NPN Scan PDF
2N3716 Motorola Power Transistor Selection Guide Scan PDF

2N3716 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N3792

Abstract: 2N3715 PNP 2N3791 2N3716 2N3713 2N3714 2N3789 2N3790 2N3791
Text: 2N3713/2N3714/2N3715/ 2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO , IE = 0 IB = 0 IC = 0 Value 2N3789 2N3791 2N3713 2N3715 2N3790 2N3792 2N3714 2N3716 2N3789 2N3791 2N3713 2N3715 2N3790 2N3792 2N3714 2N3716 2N3789 2N3790 2N3791 2N3792 2N3713 2N3714 2N3715 2N3716 COMSET SEMICONDUCTORS Unit 80 V 100 60 V 80 7.0 V 1/5


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PDF 2N3713/2N3714/2N3715/2N3716 2N3789/2N3790/2N3791/2N3792 2N3713, 2N3714, 2N3715 2N3716 2N3789, 2N3790, 2N3791 2N3792 PNP 2N3791 2N3713 2N3714 2N3789 2N3790
2n3716

Abstract: No abstract text available
Text: Qualified Level 2N3715 JAN JANTX JANTXV 2N3716 MAXIMUM RATINGS Ratings Collector-Emitter , 2N3716 Units VCEO VCBO VEBO IB IC PT 60 80 80 100 Vdc Vdc Vdc Adc Adc W W 0 , ) Characteristics Symbol Min. Max. Unit 2N3715 2N3716 V(BR)CEO 60 80 2N3715 2N3716 , VBE = 1.5 Vdc, VCE = 80 Vdc 2N3715 2N3716 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc 120101 Page 1 of 2 2N3715, 2N3716 JAN SERIES


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PDF MIL-PRF-19500/ 2N3715 2N3716 1000C 2n3716
2N3714

Abstract: 2N3716 2N3715 2N3713 PNP 2N3791 2n3792 2N3789 2N3790 2N3791 NPN transistor 2n3713
Text: 2N3713/2N3714/2N3715/ 2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO , 2N3792 2N3714 2N3716 2N3789 2N3791 2N3713 2N3715 2N3790 2N3792 2N3714 2N3716 2N3789 2N3790 2N3791 2N3792 2N3713 2N3714 2N3715 2N3716 Unit 80 V 100 60 V 80 7.0 V 1/5 2N3713/2N3714/2N3715/ 2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP Symbol Ratings IC


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PDF 2N3713/2N3714/2N3715/2N3716 2N3789/2N3790/2N3791/2N3792 2N3713, 2N3714, 2N3715 2N3716 2N3789, 2N3790, 2N3791 2N3792 2N3714 2N3713 PNP 2N3791 2N3789 2N3790 NPN transistor 2n3713
2N3715

Abstract: 2n3716 2N3792 2n 3950 2N3792, 3715 2n3791
Text: r z T SGS-THOMSON Ä 7 # RülDeæi[Liera©iDei 2N3715 2N3716 2N3791/2N3792 COMPLEMENTARY SILICON , 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use , 10 4 150 -65 to 200 200 2N3716 2N3792 100 80 Unit C ollector-B ase V oltage (I e = 0) C o lle , . October 1995 1/4 2N3715/ 2N3716 /2N3791 /2N3792 THERMAL DATA »thj-case Therm al R esistance , 200 mA fo r 2N3715/2N3791 fo r 2N3716 /2N3792 Min. Typ. Max. 1 1 10 10 5 Unit < < EE V


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PDF 2N3715 2N3716 2N3791/2N3792 2N3715AND2N3792 2N3791 2N3792 2n 3950 2N3792, 3715
2013 - Not Available

Abstract: No abstract text available
Text: 2N3713 2N3714 2N3715 2N3716 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN , PD Continuous Base Current Thermal Resistance 2N3714 2N3716 100 VEBO IC Continuous , , 2N3716 ) IC=5.0A, IB=0.5A (2N3713, 2N3714) MAX 1.0 UNITS mA 10 mA 5.0 mA 60 V 80 V 1.0 V IC=5.0A, IB=0.5A (2N3715, 2N3716 ) IC=5.0A, IB=0.5A (2N3713, 2N3714) 0.8 V


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PDF 2N3713 2N3714 2N3715 2N3716 2N3713, 2N3714, 2N3715, 2N3716 N3716)
2N3716

Abstract: 3715 transistor 2N3791 MOTOROLA
Text: Pd 0JC TJ' Tstg 2N3715 60 80 7.0 10 4.0 150 1.17 - 6 5 t o +200 2N3716 80 100 7.0 10 4.0 150 1.17 U , °C) Collector-Emitter Sustaining Voltage (1) (IC - 200 mAdc, I b - 0) Symbol Ie b o All Types ICEX 2N3715 2N3716 2N3715 2N3716 VCEO(sus)' 2N3715 2N3716 t'FE* 2N3715, 2N3716 2N3715, 2N3716 VCE(sat)' 2N3715, 2N3716 v BE(sat)* 2N3715, 2N3716 Vb e * All Types hfe All Types Typ US Min - Max 5.0 Unit mAdc mAdc 1.0 1.0 , must fall within the applicable Safe Area to avoid causing a collector-emitter Figura 13. 2N3716


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PDF 2N3791 2N3715 2N3716 3715 transistor 2N3791 MOTOROLA
1995 - 2N3716 MOTOROLA

Abstract: 2N3715 MOTOROLA 2N3716 motorola 2n3716 2N3715 2N3791
Text: Symbol 2N3715 2N3716 Unit VCEO 60 80 Volts Collector­Base Voltage VCB 80 , . These devices feature: 2N3715 2N3716 Silicon NPN Power Transistors NPN SEMICONDUCTOR , hfe 4.0 - - 2N3715, 2N3716 Base­Emitter Saturation Voltage (1) (IC = 5.0 Adc, IB = 0.5 Adc) Unit 2N3715, 2N3716 2N3715, 2N3716 Collector­Emitter Saturation Voltage (1) (IC = , = 3.0 Adc, VCE = 2.0 Vdc) Min IEBO 2N3715, 2N3716 hFE* - 2N3715 2N3716


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PDF 2N3715/D* 2N3715/D 2N3716 MOTOROLA 2N3715 MOTOROLA 2N3716 motorola 2n3716 2N3715 2N3791
2N3715

Abstract: 2N2716 2N3713 2N3714 2N3716 lc50a
Text: 2N3715 2N3716 NPN SILICON TRANSISTOR JEDEC TO-3 CASE description MAXIMUM RATINGS (TC , Dissipation Operating and Storage Temperature Thermal Resistance 2N3713 2N3714 SYMBOL 2N3715 2N3716 UNIT , =0.5A (2N3713, 2N3714) 1.0 VCE(SAT) lC=5.0A, lB=0.5A (2N3715, 2N3716 ) 0.8 VBE(ON) VCE=2.0V, lc=3.0A 1.5 VBE(SAT) lC=5.0A, Ib=0.5A (2N3713, 2N3714) 2.0 VBE(SAT) lC=5.0A, Ib=0.5A (2N3715, 2N3716 ) 1.5 hFE VCE=2.0V, IQ=1.0A (2N3713, 2N3714) 40 120 hFE VCE=2.0V, IQ=1.0A (2N3715, 2N3716 ) 50 150 hFE


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PDF 2N3713 2N3714 2N3715 2N3716 2N3714 2N3716 2N3713, 2N3714) 2N2716 lc50a
2N3716

Abstract: 2N3713 2N3714 2N3715 2N3789 2N3792
Text: Thru 2N3716 Characteristic Symbol 2N3713 2N3715 2N3714 2N3716 Unit Collector-Base Voltage vCBO 80 100 , ://www.bocasemi.com 2N3713 Thru 2N3716 NPN ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted , mA, lB= 0 ) 2N3713, 2N3715 2N3714, 2N3716 ^CEO (sus) 60 80 V Collector -Emitter Cutoff Current (VCE , , VBE(off)= -1,5V,Tc= 150 C ) 2N3713, 2N3715 2N3714, 2N3716 2N3713, 2N3715 2N3714, 2N3716 'cEX O O O o , Current Gain (IC=1.0A,VCE=2.0V) (lc=3.0A, VCE= 2.0 V) 2N3713, 2N3714 2N3715, 2N3716 2N3713, 2N3714 2N3715


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PDF 2N3789 2N3792 2N3713 2N3716 2N3713 2N3715 2N3714 2N3716 2N3713, 2N3792
2N3714

Abstract: 2n2715 2N3713 2N3715 2N3716 2N3789 2M371
Text: 2N3713 thru 2N3716 NPN SILICON NPN POWER TRANSISTORS. . . . designed for medium-speed , . 0 Rating Symbol 2N3713 2N3715 2N3714 2N3716 Unit Collector-Base Voltage VC8 80 100 Volts , 1.050 Collector connected to case. CASE 11 01 (TO-3) 3-26 2N3713 thru 2N3716 NPN ELECTRICAL , . 2N3716 VCEO(sus)* 60 ao I Vdc DC Current Gain * (Ic * I Adi'. Vce = 2 Vdc) (Ic = 3 Adc. VC£ = 2 Vdc) 2N3713, 2N3714 2NT3715, 2N3716 2N3713, 2N3714 2N3715, 2N371S hFE* 25 50 15 30 90 150 Collector-Emitter


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PDF 2N3713 2N3716 2N3789-92 2N3715 2N3714 2N3716 2N3713, 2n2715 2N3789 2M371
2N3716

Abstract: 2N3714 2N3713 2N3715 2N3789 2N3792
Text: \ 0 25 50 75 100 125 150 175 200 Tc , TEMPERATURE(°C) NPN 2N3713 Thru 2N3716 Characteristic Symbol 2N3713 2N3715 2N3714 2N3716 Unit Collector-Base Voltage VCBO 80 100 V Collector-Emitter Voltage , H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 2N3713 Thru 2N3716 NPN ELECTRICAL , Collector-Emitter Sustaining Voltage (1) (lc= 200 mA, lB= 0 ) 2N3713, 2N3715 2N3714, 2N3716 ^CEO (sus) 60 80 V , (off)= -1.5V,Tc= 150°C ) (VCE= 80 V, VBE(off)= -1,5V,Tc= 150 C ) 2N3713, 2N3715 2N3714, 2N3716 2N3713


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PDF 2N3789 2N3792 2N3713 2N3716 2N3713 2N3715 2N3714 2N3716
1995 - 2N3716

Abstract: 2N3715 2N3792 2N3791 P003N PNP 2N3791
Text: 2N3715/ 2N3716 2N3791/2N3792 COMPLEMENTARY SILICON POWER TRANSISTORS n 2N3715 AND 2N3792 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3715 and 2N3716 are silicon epitaxial-base NPN power , DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Unit NPN 2N3715 2N3716 , 1995 1/4 2N3715/ 2N3716 /2N3791/2N3792 THERMAL DATA R thj -ca se Thermal Resistance , mA 5 for 2N3715/2N3791 for 2N3716 /2N3792 o T c = 150 C for 2N3715/2N3791 for 2N3716 /2N3792


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PDF 2N3715/2N3716 2N3791/2N3792 2N3715 2N3792 2N3716 2N3791 2N3715 2N3716 P003N PNP 2N3791
2002 - 2N3715

Abstract: 2N3716 1000C
Text: Qualified Level 2N3715 JAN JANTX JANTXV 2N3716 MAXIMUM RATINGS Ratings Collector-Emitter , 2N3716 Units VCEO VCBO VEBO IB IC PT 60 80 80 100 Vdc Vdc Vdc Adc Adc W W 0 , ) Characteristics Symbol Min. Max. Unit 2N3715 2N3716 V(BR)CEO 60 80 2N3715 2N3716 , VBE = 1.5 Vdc, VCE = 80 Vdc 2N3715 2N3716 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc 120101 Page 1 of 2 2N3715, 2N3716 JAN SERIES


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PDF MIL-PRF-19500/408 2N3715 2N3716 1000C 2N3715 2N3716 1000C
2N3716

Abstract: 2N7368 2N3715 C-2688 2N3716 JAN 2N3715 JANTX equivalent jan,tx series semiconductors
Text: 2N3716. 12 10 MIL-PRF-19500/408J NOTES: 1. The input waveform is supplied by a pulse , 2N3716. The MIL-PRF-19500/622 is preferred over the MIL-PRF-19500/408 whenever interchangeability is not a problem. For new design use 2N7368 instead of 2N3716. The 2N3716 only is inactive for new design , , HIGH-POWER, TYPES 2N3715 AND 2N3716 , JAN, JANTX, JANTXV, AND JANS This specification is approved for use by , 4.0 10 10 -65 to +200 -65 to +200 5.0 117 80 60 2N3715 1.5 5.0 117 100 80 2N3716


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PDF MIL-PRF-19500/408J MIL-PRF-19500/408H 2N3715 2N3716, MIL-PRF-19500. 2N3716 2N7368 C-2688 2N3716 JAN 2N3715 JANTX equivalent jan,tx series semiconductors
2012 - 2N3716

Abstract: No abstract text available
Text: NPN Power Silicon Transistor 2N3715 & 2N3716 Features · · Available in JAN, JANTX, and JANTXV per , 2N3716 80 100 Units Vdc Vdc Vdc Adc Adc W W °C 5.0 117.0 -65 to +200 Operating & Storage , 60 Vdc VCB = 80 Vdc 2N3715 2N3716 2N3715 2N3716 2N3715 2N3716 2N3715 2N3716 Symbol V(BR)CEO Mimimum , ICES - Adc Revision Date: 3/1/2012 New Product 1 2N3715 & 2N3716 Electrical , 0.9 Adc 2N3715 2N3716 (3) Pulse Test: Pulse Width = 300 s, Duty Cycle ~ 2.0 %. Outline Drawing


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PDF 2N3715 2N3716 MIL-PRF-19500/408 O-204AA) 2N3715
1999 - 2N3715

Abstract: 2857 transistor 2N3716 1000C
Text: TECHNICAL DATA MIL-PRF 2N3715 JAN, JTX, JTXV 2N3716 JAN, JTX, JTXV QPL DEVICES , 2N3715 2N3716 Units VCEO VCBO VEBO IB IC PT 60 80 80 100 Vdc Vdc Vdc Adc Adc , . Unit 2N3715 2N3716 V(BR)CEO 60 80 2N3715 2N3716 ICBO 10 10 µAdc IEBO 1.0 , 2N3715 2N3716 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803 Vdc 03/98 REV: E Page 1 of 2 2N3715, 2N3716 JAN SERIES ELECTRICAL CHARACTERISTICS


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PDF 2N3715 2N3716 MIL-PRF-19500/408 1000C 2N3715 2N3716 O-204AA) 2857 transistor 1000C
2N3713

Abstract: 2SC 9012 2N3714 2n3716 9012 transistor 2N371S k130k1
Text: TYPES 2N3713, 2N3714, 2N3715, 2N3716 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR , temperature (unless otherwise noted) 2N3713 2N3714 2N371S 2N3716 *Collector-Base V o lt a g e , 2N3713, 2N3714, 2N3715, 2N3716 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS "electrical , 2N3713, 2N3714, 2N3715, 2N3716 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS switching , E B O X 9012 D A L L A S . T E X A S 752 2 2 5-101 TYPES 2N3713, 2N3714, 2N3715, 2N3716


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PDF 2N3713, 2N3714, 2N3715, 2N3716 2N3713 2SC 9012 2N3714 9012 transistor 2N371S k130k1
2012 - Not Available

Abstract: No abstract text available
Text: NPN Power Silicon Transistor 2N3715 & 2N3716 Features • Available in JAN, JANTX, and JANTXV , 2N3715 2N3716 Units 60 80 Vdc Collector - Base Voltage VCEO VCBO 80 100 , 2N3715 2N3716 V(BR)CEO 60 80 - Vdc 2N3715 2N3716 ICBO - 10 10 µAdc , Current VBE = -1.5 Vdc, VCE = 60 Vdc VBE = -1.5 Vdc, VCE = 80 Vdc 2N3715 2N3716 ICEX - 10 10 µAdc Collector - Emitter Cutoff Current VCB = 60 Vdc VCB = 80 Vdc 2N3715 2N3716


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PDF 2N3715 2N3716 MIL-PRF-19500/408 O-204AA)
NPN transistor SST 117

Abstract: 2N3713 2N3714 J01B 2N3716 2N3715 L72B
Text: 2N3713,2N3714,2N3715, 2N3716 N-P-N SILICON POWER TRANSISTORS T'JJwJ FEBRUARY 1968 - REVISED OCTOBER 1984 , 2N3716 •Collector-base voltage 80 V 100V 80 V 100V •Collector-emitter voltage II3 = 0) 60 V 80 V 60 , } "ts DÈ~|fl1b].7ab D03bS72 E -Ô961726 TEXAS INSTR (OPTO) 2N3713,2N3714,2N3715, 2N3716 N-P-N SILICON , ) PARAMETER test conditions 2N3715 2N3716 UNIT MIN TYP MAX MIN TYP MAX v(BR)CEO lc = 0.2 A, Ib = 0, See , ,2N3714,2N3715, 2N3716 1 N-P-N SILICON POWER TRANSISTORS ■thermal characteristics PARAMETER MIN TYP


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PDF 0D3bS71 2N3713 2N3714 2N3715 2N3716 2N3716 2N3714, NPN transistor SST 117 J01B L72B
2N3715

Abstract: Vceo 80V Ic 0.5A NPN Transistor VCEO 80V 100V 2N3716
Text: PARAMETER VALUE 2N3715 100 2N3715 VCEO 80 2N3716 VCBO 60 Collector-Base Voltage V Collector-Emitter Voltage V 2N3716 VEBO UNIT 80 Emitter-Base Voltage 7 V , ) Collector-Emitter Sustaining Voltage MIN TYP. MAX UNIT 60 IC= 200mA ; IB= 0 2N3716 V 80 , 10 2N3716 VCE= 100V; VBE(off)= -1.5V VCE= 80V; VBE(off)= -1.5V, TC=150 1.0 10 5.0 ICEX


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PDF 2N3715/3716 2N3791/3792 2N3715 2N3716 2N3715 Vceo 80V Ic 0.5A NPN Transistor VCEO 80V 100V 2N3716
BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Text: 2N3440 BDW51A BDW51B 2N3716 2N3716 BDW51B BDW51B 2N5339 2N3792 2N3792 2N3792 2N3792 2N3792 , 2N3439 2N3440 BDW51C BDW51C 2N3716 2N3716 BDW51C BDW51C 2N3714 2N3715 2N3716 2N3719 2N3720 , 2N4307 2N4309 2N4311 2N4314 2N4398 2N4399 2N4877 2N4895 2N4897 2N3716 2N3715 2N3716 BSS44 BSS44 2N3771 2N3772 2N3789 2N3790 2N3791 2N3792 2N3716 BDW51B 2N5672 2N3868 BUX48A 2N5339 2N5339 2N5339 2N5339 2N5339 2N5339 BUV20 BUV20 2N3716 2N3716 2N5339 2N5339 2N5337 2N5337


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
2010 - 2n3716

Abstract: No abstract text available
Text: 2N3716 10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 V. http://store.americanmicrosemiconductor.com/ 2n3716.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N3716 2N3716 1 0 AM PERE PO WER TRANSISTO RS SILIC O N NPN 6 0 .8 0 VO LTS 1 5 0 WATTS Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very , 2N3716 $ 6.25 $ 5.00 $ 1.25 Total Price $ 5.00 Company Testimonials Store Policies Contact Us


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PDF 2N3716 com/2n3716 2N3716
2004 - Not Available

Abstract: No abstract text available
Text: Submit ¡ ¡ 2N3716 Availability Buy 2N3716 at our online store ! 2N3716 Information Cate , 2N3716 Specifications Milita ry/High-R e l : N V(BR )C EO (V) : 80 V(BR )C BO (V) : 100 I(C ) Max . (A


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PDF 2N3716
2N3716

Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2N3716 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package APPLICATIONS ·They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified , SavantIC Semiconductor Product Specification 2N3716 Silicon NPN Power Transistors CHARACTERISTICS , tolerance:±0.10mm) 3 2N3716 -


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PDF 2N3716 2N3716
2001 - 2N3716 MOTOROLA

Abstract: BU108 2SA1046 bd139 application note BUY69A BU326 BU100
Text: 0.5 A Excellent Safe Operating Areas Complement to 2N3791­92 2N3715 2N3716 10 AMPERE POWER , VCB VEB IC IB 2N3715 60 80 2N3716 80 Unit Collector­Emitter Voltage Collector­Base Voltage , ÎÎÎ 2N3715 2N3716 Max 5.0 Unit ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted , ) (IC = 3.0 Adc, VCE = 2.0 Vdc) 2N3715 2N3716 2N3715 2N3716 - - - - 1.0 1.0 10 10 - - VCEO(sus)* Vdc 2N3715 2N3716 60 80 50 30 - - - hFE* - 2N3715, 2N3716 2N3715


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PDF 2N3791 2N3715 2N3716 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N3716 MOTOROLA BU108 2SA1046 bd139 application note BUY69A BU326 BU100
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