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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
2N3634L Microsemi Corporation Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-5,
2N3634UB Microsemi Corporation Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3
JAN2N3634L Microsemi Corporation Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN
JAN2N3634UB Microsemi Corporation Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3
JANTX2N3634L Microsemi Corporation Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN
JANTXV2N3634L Microsemi Corporation Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN

Search Stock (9)

  You can filter table by choosing multiple options from dropdownShowing 9 results of 9
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2N3634 Samsung Semiconductor Bristol Electronics 6 $12.00 $9.00
2N3634 New Jersey Semiconductor Products, Inc. Bristol Electronics - -
2N3634 Motorola Semiconductor Products Bristol Electronics 2 $8.96 $8.96
2N3634CSM-QRB TT Electronics Power and Hybrid / Semelab Limited Richardson RFPD - -
2N3634JANTX ON Semiconductor Avnet - -
JANS2N3634-LOT CHARGE Microchip Technology Inc Avnet - -
JANTX2N3634 Unknown Bristol Electronics - -
JANTX2N3634 Microsemi Corporation Chip1Stop 223 $21.10 $12.50
JANTXV2N3634UB Microsemi Corporation Chip1Stop 153 $30.72 $26.12

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2N3634 datasheet (54)

Part Manufacturer Description Type PDF
2N3634 Microsemi PNP Silicon Amplifier Transistor Original PDF
2N3634 Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=140 / Ic=1 / Hfe=50-150 / fT(Hz)=- / Pwr(W)=1 Original PDF
2N3634 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
2N3634 Boca Semiconductor GENERAL PURPOSE TRANSISTOR (PNP SILICON) - Pol=PNP / Pkg=TO39 / Vceo=140 / Ic=1 / Hfe=50-150 / fT(Hz)=- / Pwr(W)=1 Scan PDF
2N3634 Central Semiconductor PNP METAL CAN Transistors Scan PDF
2N3634 Central Semiconductor BJT, PNP, Silicon Epitaxial Transistor, IC 1A - Pol=PNP / Pkg=TO39 / Vceo=140 / Ic=1 / Hfe=50-150 / fT(Hz)=- / Pwr(W)=1 Scan PDF
2N3634 Crimson Semiconductor Transistor Selection Guide Scan PDF
2N3634 General Diode Transistor Selection Guide Scan PDF
2N3634 Micro Electronics High Voltage Transistors Scan PDF
2N3634 Micro Electronics Semiconductor Device Data Book Scan PDF
2N3634 Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N3634 Motorola European Master Selection Guide 1986 Scan PDF
2N3634 Motorola Power Transistor Selection Guide Scan PDF
2N3634 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N3634 Others Semiconductor Master Cross Reference Guide Scan PDF
2N3634 Others Shortform Electronic Component Datasheets Scan PDF
2N3634 Others Shortform Transistor Datasheet Guide Scan PDF
2N3634 Others Vintage Transistor Datasheets Scan PDF
2N3634 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N3634 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF

2N3634 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - 2n3637

Abstract:
Text: TECHNICAL DATA 2N3634 , 2N3634L JTX, JTXV 2N3635, 2N3635L JTX, JTXV 2N3636, 2N3636L JTX, JTXV , Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PT 2N3634 , L 2N3635, L 140 140 5.0 1.0 1.0 5.0 2N3636, L 2N3637, L 175 175 Units Vdc Vdc Vdc Adc W W 0 2N3634 , 2N3635 2N3636 , mW/0C for TC > +250C Characteristics -65 to +200 C 2N3634 , 2N3635 2N3636, 2N3637 TO-5 Min , Current VEB = 3.0 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc 2N3634 , L, 2N3635, L 2N3636, L


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PDF 2N3634, 2N3634L 2N3635, 2N3635L 2N3636, 2N3636L 2N3637, 2N3637L MIL-PRF-19500/357 2n3637 2N3636 2N3635 2N3634
2n3634

Abstract:
Text: , s w ^ 100 t 70 50 t 2N3634-35 30 20 Id §>v 10 7 5 -1 .0 - 2 .0 -3 .0 -5 .0 - 7 0 , 2N3634 M A X IM U M RATINGS Rating C o lle c to r-E m itte r V olta g e C o lle c to r-B a se V o , D issip a tio n D erate a b o v e 25°C @ Symbol v CEO VCBO vebo 2N3634 2N3635 -1 4 0 -1 4 0 , CHARACTERISTICS D C C urre n t G ain O c = " O*1 m A d c, V c e = -1 0 Vdc) 2N3634 , 2N3636 2N3635, 2 N 3637 2N3634 , 2N3636 2N3635, 2N3637 2N3634 , 2N3636 2N3635, 2N3637 2N3634 , 2N3636 2N3635, 2N3637 2N3634 , 2N3636 2 N 3635


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PDF 2N3634 2N3634 2N3635 2N3636 2N3637 2N3637 O-205AD) 2N3634-35 2N3634 MOTOROLA
2N3637

Abstract:
Text: — CURRENT GAIN CHARACTERISTICS versus COLLECTOR EMITTER VOLTAGE 2N3634-2N3635 , Boca Semiconductor Corp. BSC http://www.bocasemi.com MAXIMUM RATINGS Rating Symbol 2n3634 , Range Tj,Tstg -65 to +200 2N3634 thru 2N3637 CASE 79-04, STYLE 1 TO-39 (TO-205AD) THERMAL , OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage|1) dc = -10 mAdc, Ib = 0) 2N3634 , 2N3635 2N3636, 2N3637 V(BR>CEO -140 -175 - Vdc Collector-Base Breakdown Voltage dC = -100/iAdc, l£ = 0) 2N3634


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PDF 2n3634 2n3635 2N3636 2N3637 2N3634 2N3637 O-205AD) -100V 2N3636-37 2N3634-35 2n3637S 2N3634-2N3635 2N3636.37 transistor 2N3
2002 - 2N3635

Abstract:
Text: TECHNICAL DATA PNP SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF-19500/357 Devices 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L Qualified Level JAN JANTX JANTXV JANS 2N3637 , Voltage Collector Current Total Power Dissipation Symbol 2N3634 * 2N3635* 2N3636* 2N3637 , IC TO-39* (TO-205AD) 2N3634 , 2N3635 2N3636, 2N3637 TO-5* 2N3634 , 2N3635 2N3636, 2N3637 , 2N3634 , 2N3635 2N3636, 2N3637 Vdc ICBO 100 10 IEBO 50 10 ICEO 10 2N3634


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PDF MIL-PRF-19500/357 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L 2N3637 2N3637L 2N3634* 2N3635 2N3634 2N3637 2n3637 data 2N3636 2N3636 transistor 2N3635 JANS 2N3634L 2N3636L 2N3637L
2N3634 MOTOROLA

Abstract:
Text: CBO v EBO ic Pd Pd T j , T stg 2N3634 2N363S -1 4 0 - 140 - 5 .0 1.0 1.0 5.71 5.0 28.6 65 to + 200 2N3636 2N3637 -1 7 5 -1 7 5 U n it Vdc Vdc Vdc A de W att mW /°C W a tts mW rc °C 2N3634 thru 2N3637 , Characteristic C o lle cto r-E m itte r B re a kd ow n V o lta g e O ) V{BR|CEO 2N3634 , 2N3635 2N3636 , 2N3634 , 2N3635 2N3636, 2 N 3637 - 140 - 175 - - 100 -5 0 Vdc V{BR|EBO ICBO Ie BO - 5 .0 Vdc nAdc nAdc - - hFE 2N3634 , 2N3636 2N3635, 2N3637 2N3634 , 2N3636 2N3635, 2N3637 2N3634 , 2N3636


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PDF 2N3634 2N363S 2N3636 2N3637 2N3637 O-205AD) 2N3634 MOTOROLA 2N3635 MOTOROLA
2013 - 2N3635

Abstract:
Text: 2N3634 , 2N3634L , 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP , Device 2N3634 2N3635 JAN JANTX JANTXV JANHC 2N3636 2N3637 2N3634L 2N3635L 2N3636L 2N3637L TO-5 Bulk TO , 2N3634 , 2N3634L , 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L ELECTRICAL CHARACTERISTICS (TA = 25 , . Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. http://onsemi.com 2 2N3634 , 2N3634L , 2N3635 , IDENTIFICATION DETAIL STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 3 2N3634 , 2N3634L


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PDF 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L 205AA 2N3634L 2N3635 2n3634
2010 - 2N3637UB

Abstract:
Text: TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L 2N3634UB 2N3635 , MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N3634 , " corresponding devices. TO-5* 2N3634L , 2N3635L 2N3636L, 2N3637L * Consult 19500/357 for De-Rating , Voltage IC = 10mAdc 2N3634 , 2N3635 2N3636, 2N3637 Collector-Base Cutoff Current VCB = 100Vdc VCB = 140Vdc VCB = 175Vdc 2N3634 , 2N3635 2N3636, 2N3637 ICBO TO-39* (TO-205AD) 2N3634 , 2N3635


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PDF MIL-PRF-19500/357 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB 2N3637UB 2N3634UB 2N3634 2N3637 2n3637 data 2N3636L 2N3636 2N3635L 2N3635 2N3634L
Not Available

Abstract:
Text: per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB , RATINGS (TC = +25°C unless otherwise noted) Symbol 2N3634 * 2N3635* 2N3636* 2N3637* Unit , TO-5* 2N3634L , 2N3635L 2N3636L, 2N3637L °C * Electrical characteristics for “L” suffix , Voltage IC = 10mAdc 2N3634 , 2N3635 2N3636, 2N3637 Collector-Base Cutoff Current VCB = 100Vdc VCB = 140Vdc VCB = 175Vdc 2N3634 , 2N3635 2N3636, 2N3637 ICBO TO-39* (TO-205AD) 2N3634 , 2N3635


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PDF MIL-PRF-19500/357 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB
2010 - 10VDC

Abstract:
Text: per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB , RATINGS (TC = +25°C unless otherwise noted) Symbol 2N3634 * 2N3635* 2N3636* 2N3637* Unit , -5* 2N3634L , 2N3635L 2N3636L, 2N3637L °C * Electrical characteristics for "L" suffix devices are , 2N3634 , 2N3635 2N3636, 2N3637 Collector-Base Cutoff Current VCB = 100Vdc VCB = 140Vdc VCB = 175Vdc 2N3634 , 2N3635 2N3636, 2N3637 ICBO TO-39* (TO-205AD) 2N3634 , 2N3635 2N3636, 2N3637 Vdc 100


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PDF MIL-PRF-19500/357 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB 10VDC 2N3637 2N3636L 2N3636 2N3635L 2N3635 2N3634UB 2N3634L 2N3634 2N3637UB
2013 - 2n3637

Abstract:
Text: 2N3634 , 2N3634L , 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP , − Rev. 1 1 Publication Order Number: 2N3637/D 2N3634 , 2N3634L , 2N3635, 2N3635L, 2N3636 , ://onsemi.com 2 2N3634 , 2N3634L , 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L 400 1.2 150 , ) 20 ft, CURRENT GAIN BANDWIDTH (MHz) 2N3634 , 2N3634L , 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637 , . Current Gain Bandwidth Product http://onsemi.com 4 100 2N3634 , 2N3634L , 2N3635, 2N3635L, 2N3636


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PDF 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L 2N3634/L 2N3635/L 2n3637
2010 - 2N3635

Abstract:
Text: MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 , = +25°C unless otherwise noted) Symbol 2N3634 * 2N3635* 2N3636* 2N3637* Unit , -5* 2N3634L , 2N3635L 2N3636L, 2N3637L °C * Electrical characteristics for "L" suffix devices are , 2N3634 , 2N3635 2N3636, 2N3637 Collector-Base Cutoff Current VCB = 100Vdc VCB = 140Vdc VCB = 175Vdc 2N3634 , 2N3635 2N3636, 2N3637 ICBO TO-39* (TO-205AD) 2N3634 , 2N3635 2N3636, 2N3637 Vdc 100


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PDF MIL-PRF-19500/357 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB 2N3635 2N3637UB 2N3636 2n3635ub 2N3637 2N3634UB 2N3634 JANTX 2N3635L 2N3634L 2N3636L
2012 - 2N3634

Abstract:
Text: 2N3634 , 2N3634L , 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Product Preview Low Power , INFORMATION Level Device 2N3634 2N3635 JAN JANTX JANTXV JANHC 2N3636 2N3637 2N3634L 2N3635L 2N3636L 2N3637L , Test: Pulse Width = 300 ms, Duty Cycle 2.0%. http://onsemi.com 2 2N3634 , 2N3634L , 2N3635 , IDENTIFICATION DETAIL STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 3 2N3634 , 2N3634L , Junction Temperature Range Symbol VCEO VCBO VEBO IC PT PT TJ, Tstg 2N3634 /L 2N3635/L -140 -140 -5.0 1.0 1.0


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PDF 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L MIL-PRF-19500/357 2N3634/L 2N3634 2N3635 2N3635 JAN 2N3637
2008 - 2N3636 transistor

Abstract:
Text: TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L 2N3634UB 2N3635 , -0065 Rev. 1 (081247) 2N3634 , 2N3635 2N3636, 2N3637 3 PIN 2N3634UB , 2N3635UB 2N3636UB, 2N3637UB , MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N3634 , TJ, Tstg -65 to +200 TO-5* 2N3634L , 2N3635L 2N3636L, 2N3637L °C * Electrical , Collector-Emitter Breakdown Voltage IC = 10mAdc 2N3634 , 2N3635 2N3636, 2N3637 Collector-Base Cutoff Current VCB


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PDF MIL-PRF-19500/357 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB 2N3636 transistor 2N3635 10VDC 2N3637UB 2N3637 2N3636 2N3634 50krads 2n3635ub 2N3634UB
2013 - 2N3634

Abstract:
Text: , AMPLIFIER, TYPES 2N3634 THROUGH 2N3637, 2N3634UB THROUGH 2N3637UB, 2N3634UBN THROUGH 2N3637UBN, 2N3634L , * 1.3 Maximum ratings. Unless otherwise specified TA = +25°C. Types 2N3634 , 2N3634L 2N3634UB and , 45 90 90 Min 25 25 55 55 25 25 55 55 2N3634 , 2N3634L 2N3634UB and UBN 2N3635 , Subgroup 2 °C/W ZθJX 2N3634 , 2N3634L , UB, UBN VCB = 140 V dc ICBO1 10 µA dc 2N3635 , (BR)CEO 2N3634 , 2N3634L , UB, UBN 2N3635, 2N3635L, UB, UBN 140 V dc 2N3636, 2N3636L, UB


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PDF MIL-PRF-19500/357M MIL-PRF-19500/357L 2N3634 2N3637, 2N3634UB 2N3637UB, 2N3634UBN 2N3637UBN, 2N3634L 2N3637L,
Not Available

Abstract:
Text: TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L 2N3634UB 2N3635 , 2N3634 * 2N3636* 2N3635* 2N3637* Unit Collector-Emitter Voltage VCEO 140 175 Vdc , “non L” corresponding devices. TO-5* 2N3634L , 2N3635L 2N3636L, 2N3637L * Consult 19500/357 , Collector-Emitter Breakdown Voltage IC = 10mAdc 2N3634 , 2N3635 2N3636, 2N3637 Collector-Base Cutoff Current VCB = 100Vdc VCB = 140Vdc VCB = 175Vdc 2N3634 , 2N3635 2N3636, 2N3637 ICBO TO-39* (TO


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PDF MIL-PRF-19500/357 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB
2013 - 2N3635

Abstract:
Text: 2N3634 2N3635 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3634 and 2N3635 are silicon PNP epitaxial planar transistors designed for , toff VCE=30V, IC=30mA, f=100MHz ( 2N3634 ) VCE=30V, IC=30mA, f=100MHz (2N3635) VCB=20V, IE=0, f , R1 (17-September 2013) 2N3634 2N3635 SILICON PNP TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) 2N3634 2N3635 SYMBOL TEST CONDITIONS MIN MAX MIN MAX


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PDF 2N3634 2N3635 2N3634 17-September 150mA 2N3635
JANKCA2N3637

Abstract:
Text: , SILICON, AMPLIFIER, TYPES 2N3634 THROUGH 2N3637, 2N3634UB THROUGH 2N3637UB, 2N3634L THROUGH 2N3637L, JAN , +25°C. Types 2N3634 , 2N3634L , 2N3634UB 2N3635, 2N3635L, 2N3635UB 2N3636, 2N3636L, 2N3636UB , 45 90 90 Min 25 25 55 55 25 25 55 55 2N3634 , 2N3634L , 2N3634UB 2N3635, 2N3635L , , IC = 10 mA dc pulsed (see 4.5.1) V(BR)CEO 2N3634 , 2N3634L , UB 2N3635, 2N3635L, UB 140 V , ratio 3076 VCE = 10 V dc, IC = 0.1 mA dc pulsed (see 4.5.1) hFE1 2N3634 , 2N3634L , UB


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PDF MIL-PRF-19500/357L MIL-PRF-19500/357K 2N3634 2N3637, 2N3634UB 2N3637UB, 2N3634L 2N3637L, JANKCA2N3637 2N3637UB 2N3637L 2N3637 JAN 2N3637 2N3635L 2N3635
Not Available

Abstract:
Text: tu re R a ng e Symbol v CEO v CBO vebo 2N3634 2N3635 -1 4 0 - 140 2N3636 2N3637 -1 7 5 -1 7 5 5.0 1.0 1.0 5.71 5.0 28.6 Unit V dc Vdc Vdc A de W a tt m W ;C W a tts m W X X 2N3634 , , FETs AND DIODES 3 -6 7 2N3634 thru 2N3637 ELECTRICAL CHARACTERISTICS O u tp u t C a p a cita n , (mA) MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 3-68 2N3634 thru 2N3637 FIGURE 3 - CURRENT GAIN CHARACTERISTICS versus JUNCTION TEMPERATURE 2N3634 1C , COLLECTOR CURRENT (mAl 2N3637


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PDF 2N3634 2N3635 2N3636 2N3637 O-205AD)
2004 - Not Available

Abstract:
Text: Submit ¡ ¡ 2N3634 Availability Buy 2N3634 at our online store ! 2N3634 Information Cate , 2N3634 Specifications Milita ry/High-R e l : N V(BR )C EO (V) : 140 V(BR )C BO (V) : 140 I(C ) Max . (A


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PDF 2N3634 STV3208
2N3634 MOTOROLA

Abstract:
Text: MOTOROU Orderth18 document by2N3WWD SEMICONDUCTOR TECHNICAL DATA o 2N3634JTX , 2N3635JTX , )CEO (1C= 10 mAdc) (IC = 10 mAdc) 2N3634 , 2N3635 2N3636, 2N3637 Emitter-ese (1C= 100@&;'* (1C= lo&*)a$' 2N3634 , 2N3635 2N3636, 2N3637 Vdc Vdc V(BR)CBO Voltage *&i Cutoff , /93 @ Motorola,Ino.19M @do M-RO&A @ 2N3634 THRU 2N3637 SERIES lu~ llme(~&If) i , SIGNAL TRANSISTOR DATA I ns (oontinued) q 2N3634 THRU 2N3467 SERIES a COMMERCIAL PLUS


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PDF Orderth18 2N3634JTX, 2N3635JTX, 2N3636JTX, 2N3637JTX, CHARACTERlST19 2N3634, 2N3635 2N3636, 2N3637 2N3634 MOTOROLA m21 transistor transistor m21 2N3637 2N3634 MIL-19500 2N3467 MOTOROLA 2N3635 2N3636 2N3636JTX
2010 - Not Available

Abstract:
Text: 2N3634 PNP silicon general purpose transistor 9.21 Transistors Transisto. http://store.americanmicrosemiconductor.com/ 2n3634.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N3634 2N3634 PNP s ilic o n general purpo s e t rans is t o r Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2 , Manufacturer Partnumber: List Price: Our Price: You Save: Americanmicrosemi 2N3634 $ 11.51 $ 9.21 $ 2.30


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PDF 2N3634 com/2n3634 2N3634
1999 - 2N36

Abstract:
Text: Data Sheet No. 2N3634 Type 2N3634 Geometry TBD Polarity PNP Qual Level: Pending Features: · · · · General-purpose low-power amplifier transistor which operates over a wide temperature range , limits shown are per MIL-PRF-19500/357 which Semicoa meets in all cases. Generic Part Number: 2N3634 , -65 to +200 -65 to +200 Unit V V V A o C C o Data Sheet No. 2N3634 Electrical , 150 600 Unit ns ns ns ns ns Data Sheet No. 2N3634 Small Signal Characteristics Short


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PDF 2N3634 MIL-PRF-19500/357 MIL-PRF-19500/357 3x10-4 2N36 2N3634
2N3634

Abstract:
Text: '" 3 .î " f -ty r T MAXIMUM RATINGS Rating Coliector-Emltter Voltage Collector-Base Voltage Emitter-Base Voltage. Collector Current HIGH VOLTAGE PNP SILICON TRANSISTORS 2N3634 THRU 2N3637 I , 2N3634 2N3635 140 140 5.0 1.0 1.0 5.71 2N3636 2N3637 175 175 Unit Vdc Vdc Vdc Ade Watt m W /X , DMmiim « 2N3634 min max -1 4 0 2N3635 min max -14Ó -1 4 0 -5 -1 « - 5C 55 90 100 -175 -1 7 5 -5 , Input Capacitance Vq e TEST CONDITIONS = -3 0 V , lc = - 3 0 mA, f x 100M H z 2N3634 2N3635


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PDF 2N3634 2N3637 2N3635 2N3636 2N3637 00V---------
2009 - Not Available

Abstract:
Text: SILICON PNP TRANSISTOR 2N3634 · · · · · General Purpose PNP Silicon Transistor High Voltage, High Speed Saturated Switching Low Power Amplifier Applications Hermetic TO39 Package Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD Collector ­ , ://www.semelab-tt.com SILICON PNP TRANSISTOR 2N3634 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated , ://www.semelab-tt.com Document Number 7744 Issue 2 Page 2 of 3 SILICON PNP TRANSISTOR 2N3634 MECHANICAL DATA


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PDF 2N3634 -140V O-205AD)
LG 631 IC

Abstract:
Text: Data Sheet Central Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors 2N3634 2N3635 PNP SILICON TRANSISTOR JEDEC TO-39 CASE description The CENTRAL SEMICONDUCTOR 2N3634 and 2N3635 types are Silicon PNP Epitaxial Planar Transistors designed for general purpose switching and amplifier applications , ) 2N3634 2N3635 SYMBOL TEST CONDITIONS MIN MAX MIN MAX hFE VCE=10V, lc=0.1mA 40 80 hFE VCE=10V, lc


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PDF 2N3634 2N3635 2N3635 150mA 100MHz LG 631 IC I2406 ic lg 631
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