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RG2012N-3570-D-T5 Susumu Co Ltd Fixed Resistor, Thin Film, 0.25W, 357ohm, 150V, 0.5% +/-Tol, -10,10ppm/Cel, 0805
RG2012N-3570-W-T5 Susumu Co Ltd Fixed Resistor, Thin Film, 0.25W, 357ohm, 150V, 0.05% +/-Tol, -10,10ppm/Cel, 0805
RG2012N-3570-W-T1 Susumu Co Ltd Fixed Resistor, Metal Film, 0.125W, 357ohm, 100V, 0.05% +/-Tol, -10,10ppm/Cel, 0805
RG2012N-3570-B-T5 Susumu Co Ltd Fixed Resistor, Thin Film, 0.25W, 357ohm, 150V, 0.1% +/-Tol, -10,10ppm/Cel, 0805
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2N3570 New Jersey Semiconductor Products, Inc. Bristol Electronics 907 - -
2N3570 Texas Instruments Bristol Electronics 5 $2.69 $2.69

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2N3570 datasheet (25)

Part Manufacturer Description Type PDF
2N3570 Advanced Semiconductor NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
2N3570 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N3570 Ferranti Semiconductors Shortform Data Book 1971 Scan PDF
2N3570 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
2N3570 Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N3570 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N3570 Others Semiconductor Master Cross Reference Guide Scan PDF
2N3570 Others Shortform Electronic Component Datasheets Scan PDF
2N3570 Others Shortform Transistor Datasheet Guide Scan PDF
2N3570 Others Vintage Transistor Datasheets Scan PDF
2N3570 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N3570 Others Transistor Shortform Datasheet & Cross References Scan PDF
2N3570 Others Basic Transistor and Cross Reference Specification Scan PDF
2N3570 Others Shortform Transistor PDF Datasheet Scan PDF
2N3570 Others Short Form Datasheet and Cross Reference Data Scan PDF
2N3570 Others Transistor Replacements Scan PDF
2N3570 SGS-Thomson Transistor Datasheet Scan PDF
2N3570 SGS-Thomson Class A Low Noise Transistors for Small Signal Applications Scan PDF
2N3570 Texas Instruments Supply Division Product Catalogue 1978/79 Scan PDF
2N3570 Texas Instruments Discrete Devices 1978 Scan PDF

2N3570 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - 2n3570

Abstract: Transistor D 798
Text: 2N3570 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N3570 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. PACKAGE STYLE TO- 72 MAXIMUM RATINGS IC 50 mA VCB 30 V VCE 15 V VEB 3.0 V PDISS 200 mW @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C JC 500 C/W O O O O O 1 = EMITTER 3 = COLLECTOR O CHARACTERISTICS SYMBOL 2 = BASE 4 = CASE NONE O TC = 25 C TEST CONDITIONS


Original
PDF 2N3570 2N3570 Transistor D 798
2N3571

Abstract: 2N3570 2N4253 2N4252 2N3571 NPN BFT34 BFT36 BFT37 T072 BFT33
Text: 2N3570 NPN T072 30 15 3 50 5 20 150 1000 7 1500 — — Oscillator power output typically 60mW at 1 GHz


OCR Scan
PDF BFT32 BFT33 BFT34 fBFT35 BFT35 BFT36 BFT37 Max50 2N3571 2N3570 2N4253 2N4252 2N3571 NPN T072
Not Available

Abstract: No abstract text available
Text: 2N3570 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V) V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Max. Current gain. @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) f(T) Min. (Hz) Transition Freq @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) Power Gain Min. (dB) @I(C) (A) (Test Condition) @V(CE) (V) (Test


Original
PDF 2N3570
2n3571

Abstract: 2N3570 2N3572
Text: TY P ES 2N3570 , 2N3571. 2N3572 N-P-N S ILIC O N TR A N S IS TO R S B U L L E T IN N O . D L -S 7 3 1 1 9S 6, M A R C H 1973 FOR LOW-NOISE VH F/U H F AM P LIFIE R , OSCILLATOR, AND MIXER APPLICATIONS 2N3570 Features: · · · description These transistors are ideally suited fo r such applications as am plifiers, oscillators, and mixers. The guaranteed m inim um gain-bandwidth products range fro m 1 , X S 0 12 · D A L L A S . T E X A S 75222 4-233 TY P ES 2N3570 , 2N3571. 2N3572 N -P-N S ILIC O


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PDF 2N3570, 2N3571. 2N3572 2N3570 2n3571
2N3571

Abstract: RF diodes 2N3572 Transistors T072 T018 BFY90 2N918 2N3570 2N2708
Text: 700 2 <8 -5 2 200M 1 -5 15 15dB 200 T018 2N3570 30 15 50 20 150 5 - — <7 2 1000M 0 -75 6 60mW 1000


OCR Scan
PDF BFY90 175mW 2N918 2N2708 T1000 2N3571 2N3572 2N2102 2N4036 RF diodes Transistors T072 T018 2N3570
High frequency transistors

Abstract: RF diodes 2N2708 ZT92 2n3570 2N918 2N2102 2N4036 BFY90 ZT91
Text: 200 T072 2N2708 35 20 — 30 200 2 700 2 <8 -5 2 200M 1 -5 15 15dB 200 T018 2N3570 30 15 50 20 150 5


OCR Scan
PDF BFY90 175mW 2N918 2N2708 O1000 2N3571 2N3572 2N2102 2N4036 High frequency transistors RF diodes ZT92 2n3570 2N4036 ZT91
S-parameter 2N5179

Abstract: s-parameter 2N2857 2N3953 bipolar transistor s-parameter 2N3570 NPN transistor mhz s-parameter
Text: MA42024 MA42025 MA42026 MA42027 MA42028 2N5031 2N3570 2N3953 2N5032 2N3880 2N3839 2N3571 2N5054 2N3683


OCR Scan
PDF MA42020 2N2857 MA42021 MA42022 MA42023 MA42024 MA42025 MA42026 MA42027 S-parameter 2N5179 s-parameter 2N2857 2N3953 bipolar transistor s-parameter 2N3570 NPN transistor mhz s-parameter
2N2857 Model

Abstract: 2N3570
Text: ' Number MA42020 MA42021 MA42022 MA42023 MA42024 MA42025 MA42026 MA42027 MA42028 2N5031 2N3570 2N3953


OCR Scan
PDF MA42020 2N2857 MA42021 MA42022 MA42023 MA42024 MA42025 MA42026 MA42027 2N2857 Model 2N3570
2N4252

Abstract: pnp hfe 70 2N3571 2N3570 2N3572 BFT69 2N3571 NPN 048J 2N4253 T018
Text: Metal Can o. Case Outlines Collector i 4-95J0 0-76 0-480 -1 2-7h min Dimensions in mm TO-18 High Frequency Transistors >• Maximum ratin as Device re BV BV BV hFE1 * NF fT VCE (sat) Type o a. Case CBO CEO EBO ICM Ic max. min. Ic Notes V V V mA mA min. max. f dB MHz mA V 2N3570 NPN T072 30 15 3 50 5 20 150 1000 7 1500 — — Oscillator power output typically 60mW at 1 GHz 2N3571 NPN T072 25 15 3 50 5 20 200 450 4 1200 — — 2N3572 NPN T072 25 13 3 50


OCR Scan
PDF 4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 High15 -150nS 240nS pnp hfe 70 BFT69 2N3571 NPN 048J T018
BF225

Abstract: 2n3984 2N2539 TI407 TI-407 2N4255 N4254 TIS37 2N915 2N3983
Text: 400 — — — A.G.C. DEVICE NPN UHF 2N3570 TQ72 PE 30 15 3 005 0-20 5 20 150 5 1500 N.F.<7dB at


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PDF 2N915 2N916 2N918 2N2865 2S102 2S103 2S104 2S731 2N2540 2N2883 BF225 2n3984 2N2539 TI407 TI-407 2N4255 N4254 TIS37 2N3983
BF177

Abstract: BF178 bf179 BFT79 BC325 BFQ36 bf338 2N2219 2N2905 2N4253 2N3572
Text: Metal Can o. Case Outlines Collector i 4-95J0 0-76 0-480 -1 2-7h min Dimensions in mm TO-18 High Frequency Transistors >• Maximum ratin as Device re BV BV BV hFE1 * NF fT VCE (sat) Type o a. Case CBO CEO EBO ICM Ic max. min. Ic Notes V V V mA mA min. max. f dB MHz mA V 2N3570 NPN T072 30 15 3 50 5 20 150 1000 7 1500 — — Oscillator power output typically 60mW at 1 GHz 2N3571 NPN T072 25 15 3 50 5 20 200 450 4 1200 — — 2N3572 NPN T072 25 13 3 50


OCR Scan
PDF 4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 BFQ36 BF257/8/9 BFQ37 BF177 BF178 bf179 BFT79 BC325 bf338 2N2219 2N2905
2010 - BF480

Abstract: R950 Avantek S 2n3570 2SC988
Text: 2SC2806 ME3001 ME3002 2N6304 BFXB9 2N3570 2N50S4 2SC3137 2N2857 2SC2353 2SC2353 S01303 S~1303 ~~g~~g5


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PDF 2N6619 2N6620 BFR15A MA42260-2B7 MM2261-2B7 2N6597 2N6598 BF480 R950 Avantek S 2n3570 2SC988
2N2708

Abstract: 2N3571 Ferranti ZT84 ferranti 2N2907a ZT89 ZT88 ZT86 ZT211 ZT189 BFY90
Text: 2N2708 35 20 — 30 200 2 700 2 <8 -5 2 200M 1 -5 15 15dB 200 T018 2N3570 30 15 50 20 150 5 - — <7 2


OCR Scan
PDF 2N3571 2N3572 2N2102 2N4036 2N2708 Ferranti ZT84 ferranti 2N2907a ZT89 ZT88 ZT86 ZT211 ZT189 BFY90
C495 transistor

Abstract: c735 2N1893 equivalent C735 O c644 C749 2N2222 hfe 2N3570 transistor C633 NPN C460
Text: Metal Can o. Case Outlines Collector i 4-95J0 0-76 0-480 -1 2-7h min Dimensions in mm TO-18 High Frequency Transistors >• Maximum ratin as Device re BV BV BV hFE1 * NF fT VCE (sat) Type o a. Case CBO CEO EBO ICM Ic max. min. Ic Notes V V V mA mA min. max. f dB MHz mA V 2N3570 NPN T072 30 15 3 50 5 20 150 1000 7 1500 — — Oscillator power output typically 60mW at 1 GHz 2N3571 NPN T072 25 15 3 50 5 20 200 450 4 1200 — — 2N3572 NPN T072 25 13 3 50


OCR Scan
PDF 4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 BS9300 2N2219A C495 transistor c735 2N1893 equivalent C735 O c644 C749 2N2222 hfe transistor C633 NPN C460
2N290

Abstract: 2N918 2N4253 2N4252 2N4037 equivalent 2n4036 equivalent 2N3572 2N3571 2N3570 T072
Text: Metal Can o. Case Outlines Collector i 4-95J0 0-76 0-480 -1 2-7h min Dimensions in mm TO-18 High Frequency Transistors >• Maximum ratin as Device re BV BV BV hFE1 * NF fT VCE (sat) Type o a. Case CBO CEO EBO ICM Ic max. min. Ic Notes V V V mA mA min. max. f dB MHz mA V 2N3570 NPN T072 30 15 3 50 5 20 150 1000 7 1500 — — Oscillator power output typically 60mW at 1 GHz 2N3571 NPN T072 25 15 3 50 5 20 200 450 4 1200 — — 2N3572 NPN T072 25 13 3 50


OCR Scan
PDF 4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 High59 BS9365 2N290 2N4037 equivalent 2n4036 equivalent T072
N2222

Abstract: 2N222A 2N222 2N222-A BFY50 BFX84 BFS61 BFS60 BFS59 2n3600
Text: -72 T3AII 2N3570 30 15 3 0 200 20 150 7 0» 0 -75 —. 60* 1500 TO-18 T3AII 2N3571 25 15 3 0 200 20 200


OCR Scan
PDF BFS59 BFS60 BFS61 BFS96-98 BFX84 2N3571 2N3572 2N3600 at60MHz tat200 N2222 2N222A 2N222 2N222-A BFY50
C495 transistor

Abstract: BF194 2N4996 BF194 equivalent BF195 BF597 bf357 BF594 BF195 equivalent transistor c495
Text: . f dB MHz mA V 2N3570 NPN T072 30 15 3 50 5 20 150 1000 7 1500 — — Oscillator power output


OCR Scan
PDF BF594 BF594, BF194 BF595 BF195 BF597 BF197 2N4996 BS9300 2N2219A C495 transistor BF194 BF194 equivalent BF195 BF597 bf357 BF594 BF195 equivalent transistor c495
F13S

Abstract: BFQ35 bc304 equivalent 2n3440 equivalent BC177 pnp transistor transistor bc303 transistor t05 BF179 2N3571 2N3570
Text: Metal Can o. Case Outlines Collector i 4-95J0 0-76 0-480 -1 2-7h min Dimensions in mm TO-18 High Frequency Transistors >• Maximum ratin as Device re BV BV BV hFE1 * NF fT VCE (sat) Type o a. Case CBO CEO EBO ICM Ic max. min. Ic Notes V V V mA mA min. max. f dB MHz mA V 2N3570 NPN T072 30 15 3 50 5 20 150 1000 7 1500 — — Oscillator power output typically 60mW at 1 GHz 2N3571 NPN T072 25 15 3 50 5 20 200 450 4 1200 — — 2N3572 NPN T072 25 13 3 50


OCR Scan
PDF 4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 High59 BS9365 F13S BFQ35 bc304 equivalent 2n3440 equivalent BC177 pnp transistor transistor bc303 transistor t05 BF179
2010 - 2N3609

Abstract: 2N3633 2N3520 transitron 2SC1330 2N3618 motorola 2n3584 GE 2N3637 semicoa LOW-POWER SILICON NPN BSV69
Text: 2N3569 Carter Semi CSR Indus Horizon PPC Product Raytheon Co SemiconTech 2N3570 Texas Instr 2N3571 Texas


Original
PDF RN5816 RN5B16 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 2N3609 2N3633 2N3520 transitron 2SC1330 2N3618 motorola 2n3584 GE 2N3637 semicoa LOW-POWER SILICON NPN BSV69
C736

Abstract: C495 transistor bc303 equivalent 2N2222A 026 bc143 equivalent C735 BFY52 equivalent NPN C460 equivalent transistor 2N1711 C588
Text: Metal Can o. Case Outlines Collector i 4-95J0 0-76 0-480 -1 2-7h min Dimensions in mm TO-18 High Frequency Transistors >• Maximum ratin as Device re BV BV BV hFE1 * NF fT VCE (sat) Type o a. Case CBO CEO EBO ICM Ic max. min. Ic Notes V V V mA mA min. max. f dB MHz mA V 2N3570 NPN T072 30 15 3 50 5 20 150 1000 7 1500 — — Oscillator power output typically 60mW at 1 GHz 2N3571 NPN T072 25 15 3 50 5 20 200 450 4 1200 — — 2N3572 NPN T072 25 13 3 50


OCR Scan
PDF 4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 BS9300 2N2219A C736 C495 transistor bc303 equivalent 2N2222A 026 bc143 equivalent C735 BFY52 equivalent NPN C460 equivalent transistor 2N1711 C588
2N222A

Abstract: N2222 zs90 2N222 BFS61 ZS150 BFY51 2N222-A BFS60 BFS59
Text: -72 T3AII 2N3570 30 15 3 0 200 20 150 7 0» 0 -75 —. 60* 1500 TO-18 T3AII 2N3571 25 15 3 0 200 20 200


OCR Scan
PDF BFS59 BFS60 BFS61 BFS96-98 BFX84 KS77B KS78B 2N222A N2222 zs90 2N222 ZS150 BFY51 2N222-A
2n222a

Abstract: ZTX326 CV7644 ZT89 ZT88 ZT1481 ZT84 ZT83 ZT80 CV7373
Text: -72 T3AII 2N3570 30 15 3 0 200 20 150 7 0» 0 -75 —. 60* 1500 TO-18 T3AII 2N3571 25 15 3 0 200 20 200


OCR Scan
PDF ZT80-ZT180 100mA Series-ZT180 ZT110-ZT280 CV7373) CV7644) CV7371) CV7372) ZT183. ZT184 2n222a ZTX326 CV7644 ZT89 ZT88 ZT1481 ZT84 ZT83 ZT80 CV7373
2n222 TRANSISTOR

Abstract: N2222 2n222a transistor 2n222a n3055 2n222A TRANSISTOR 2n222a npn transistor 2N222-A 2N222 ZT1482
Text: -72 T3AII 2N3570 30 15 3 0 200 20 150 7 0» 0 -75 —. 60* 1500 TO-18 T3AII 2N3571 25 15 3 0 200 20 200


OCR Scan
PDF ZT1480 ZT1482 ZT1484 ZT1486 ZT1488 ZT1490 2N3055 2N3439 2N3440 2N3441 2n222 TRANSISTOR N2222 2n222a transistor 2n222a n3055 2n222A TRANSISTOR 2n222a npn transistor 2N222-A 2N222
N2222

Abstract: 2n222 2n222a BFY52 BFY51 BFY50 BFX84 BFS61 BFS60 BFS59
Text: -72 T3AII 2N3570 30 15 3 0 200 20 150 7 0» 0 -75 —. 60* 1500 TO-18 T3AII 2N3571 25 15 3 0 200 20 200


OCR Scan
PDF BFS59 BFS60 BFS61 BFS96-98 BFX84 BFS36 2N930 BFS37 2N2605 BFS36A N2222 2n222 2n222a BFY52 BFY51 BFY50
2n222a

Abstract: 2n222a npn transistor ZS90 N2222 ZS106 ZS132 n3055 transistor 2n222a ZT1482 2N2223
Text: -72 T3AII 2N3570 30 15 3 0 200 20 150 7 0» 0 -75 —. 60* 1500 TO-18 T3AII 2N3571 25 15 3 0 200 20 200


OCR Scan
PDF ZT1480 ZT1482 ZT1484 ZT1486 ZT1488 ZT1490 2N3055 2N3439 2N3440 2N3441 2n222a 2n222a npn transistor ZS90 N2222 ZS106 ZS132 n3055 transistor 2n222a 2N2223
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