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2N3553 datasheet (50)

Part Manufacturer Description Type PDF
2N3553 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
2N3553 Philips Semiconductors Silicon Planar Epitaxial Overlay Transistor Original PDF
2N3553 Philips Semiconductors NPN medium power transistor Original PDF
2N3553 Philips Semiconductors Silicon Epitaxial Planar Overlay Transistors Original PDF
2N3553 Semelab NPN Silicon High Frequency Transistor Original PDF
2N3553 SunLED USA silicon transistors UHF/VHF power transistors Original PDF
2N3553 Advani-Oerlikon Television / Video Devices Scan PDF
2N3553 Continental Device India Metal Can and Epoxy Transistors Scan PDF
2N3553 Ferranti Semiconductors Shortform Data Book 1971 Scan PDF
2N3553 Ferranti Semiconductors RF Diodes and Transistors 1977 Scan PDF
2N3553 ITT Semiconductors Semiconductor Summary 1969 Scan PDF
2N3553 Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N3553 Motorola The European Selection Data Book 1976 Scan PDF
2N3553 Motorola European Master Selection Guide 1986 Scan PDF
2N3553 Motorola Power Transistor Selection Guide Scan PDF
2N3553 Mullard Quick Reference Guide 1977/78 Scan PDF
2N3553 Others Transistor Shortform Datasheet & Cross References Scan PDF
2N3553 Others Basic Transistor and Cross Reference Specification Scan PDF
2N3553 Others Basic Transistor and Cross Reference Specification Scan PDF
2N3553 Others Shortform Transistor PDF Datasheet Scan PDF

2N3553 Datasheets Context Search

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2N3553

Abstract: 2N3375 WE VQE 23 F 2n3632 transistor 2n3553 2N3553 NPN philips 1968 philips 1969 philips TRANSISTORS 1968 Transistor 2n3375
Text: 41E D ■711Qö2b 00EÖ033 1 PHILIPS INTERNATIONAL IPHIN 2n3375 2n3553 2n3632 T-33~0? silicon epitaxial planar overlay transistors The 2N3553 is an n-p-n overlay transistor in a TO-39 metai , in T0-60 metal envelopes with the electrodes insulated from the studs. The 2N3553 and the 2N3375 are , Collector-emitter voltaae 2N3553 2N3375 2N3632 -VBE = 1,5V VCEX max. 65 65 65 V Collector-emitter voltage , ) 2N3553 175 2,5 <0,25 >50 2N3375 100 7,5 < 1 >65 2N3375 400 > 3 1 >40 2N3632 175 > 13,5 3


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PDF 2n3375 2n3553 2n3632 2N3632 T0-60 WE VQE 23 F transistor 2n3553 2N3553 NPN philips 1968 philips 1969 philips TRANSISTORS 1968 Transistor 2n3375
2n3553

Abstract: 2N3375 2N3632 2N355 TRANSISTOR 2n355 2N3553 RCA npn Epitaxial Silicon zg 2N3632 RCA rca 2n3375 40666
Text: File No. 386 □UCBZra Solid State Division RF Power Transistors 2N3375 2N3553 2N3632 40665 40666 RCA 2N3632, 2N3553 , 2N3375, 40665 and40666 are epitaxial silicon n-p-n transistors of the , , frequency multipliers and oscillators. The 2N3375, 2N3553 , and 40666 are especially intended for VHF-UHF , , Absolute-Maximum Values: 2N3553 2N3375 2N3632 40666 40665 COLLECTOR-TO-BASE VOLTAGE.VCB0 65 65 65 V , ( «4« 1 1 1 ®§ ^ r > > y I i ; 1 1 • H-1381 H 1307 2N3553 2N3632 2N3375 40666 40665


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PDF 2N3375 2N3553 2N3632 2N3632, 2N3553, 2N3375, and40666 2N355 TRANSISTOR 2n355 2N3553 RCA npn Epitaxial Silicon zg 2N3632 RCA rca 2n3375 40666
2n3375

Abstract: 2n3375 transistor 2N3553
Text: b'lE ] ■> bbSB'lBl DOETTbb 3Tb 2N3375 2N3553 2N3632 IAPX A N AMER PHILIPS/DISCRETE SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a , overlay transistors in TO-60 metal envelopes with the electrodes insulated from the studs. The 2N3553 , . QUICK REFERENCE DATA 2N3553 Collector-emitter voltage - V BE = 1,5 V 2N3375 2N3632 V CEX , R.F. performance at V q E = 28 V type number f (MHz) P0 (W) Pi (W) 7) (%) 2N3553


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PDF 2N3375 2N3553 2N3632 2N3553 The2N3375 2N3375 2N3632 2n3375 transistor
2N3553

Abstract: 2N3553 equivalent TO39 Package RF POWER TRANSISTOR NPN 7w RF POWER TRANSISTOR NPN 2N3553 NPN common emitter amplifier npn power amplifier circuit transistor 2n3553 4 npn transistor ic
Text: %20in%20html%20needs%20conversion/ 2n3553 / 2N3553.htm (1 of 2) [8/31/01 2:47:52 PM] C B E 2N3553 Parameter Symbol Test , %20in%20html%20needs%20conversion/ 2n3553 / 2N3553.htm (2 of 2) [8/31/01 2:47:52 PM] - , 2N3553 2N3553 Silicon NPN Transistor RF Power Driver Description: The 2N3553 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as an output, driver, or in predriver stages in VHF


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PDF 2N3553 2N3553 175MHz, 100mA, 100MHz 100kHz 175MHz 250mA, 20html 2N3553 equivalent TO39 Package RF POWER TRANSISTOR NPN 7w RF POWER TRANSISTOR NPN 2N3553 NPN common emitter amplifier npn power amplifier circuit transistor 2n3553 4 npn transistor ic
PT8811

Abstract: PT8740 transistor pt4544 PT8828 RF Transistor S10-12 2N6095 SD1076 MRF510 MM1669 2N3563 REPLACEMENT
Text: CD1616 2N5945 MM8003 SD1006 MSC82003 TH2003 PT9733 SD1219 2N5713 2N5642 BFW47 2N3553 CD1617 2N5946 M , -1 2N5835 SD1300 BFY44 2N3553 CM25-12 SD1422 MM8011 2N4428 PT2677B SD1012 PT9795A SD1229 2N5841 SD1345 BFY70 2N3553 CM30-12A SD1488 MM8012 SD 1005-4 PT3500 2N3553 PT9796 SD 1290-3 2N5842 SD 1345 BFY90 , 2N6166 SD1019-5 BLX68 2N5946 DM20-12BA SD1421 MRF237 SD1127 PT4544 SD1143 TPV596 TH596 2N6197 2N3553 , J03030 SD 1488 MRF502 SD 1300 PT5656 SD 1202 2 N3294 SD1310 40290 2N3553 BLY61 2N4427 J03040 SD 1488


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PDF BAM20 2N5642 B25-12 2N6082 2N6084 MSC2304 TH2304 PT8809 SD1134 2N5689 PT8811 PT8740 transistor pt4544 PT8828 RF Transistor S10-12 2N6095 SD1076 MRF510 MM1669 2N3563 REPLACEMENT
2N3553

Abstract: 2N3375 2N3632 ic 2n35 data inductor 4312 020 36640 ic 2n35 4312 020 36640 Transistor 2n3375 2n3375 transistor 2N35
Text: b*îE D ■bbS3T31 □QEtî7bb 3Tb N AMER PHILIPS/DISCRETE I I ■APX A 2N3375 2N3553 2N3632 SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO , transistors in T0-60 metal envelopes with the electrodes insulated from the studs. The 2N3553 and the 2N3375 , DATA Collector-emitter voltage -VBE = 1,5 V 2N3553 2N3375 2N3632 VCEX max. 65 65 65 V , MHz MHz R.F. performance at Vqe = 28 V type number f (MHz) P0 (W) Pi (W) T) (%) 2N3553 175 2,5 <0


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PDF bbS3T31 2N3375 2N3553 2N3632 2N3553 2N3375 2N3632 T0-60 ic 2n35 data inductor 4312 020 36640 ic 2n35 4312 020 36640 Transistor 2n3375 2n3375 transistor 2N35
mrf245

Abstract: SD1416 PT9788 PT8710 2N5642 BLY94 PT8811 2N4072 BLX66 PT8740
Text: TH2003 PT9733 SD1219 2N5713 2N5642 BFW47 2N3553 CD1617 2N5946 M M8006 SD 1300 MSC82005 TH2005 PT9734 SD , CM20-12A SD 1422 MM8010 2N4428 MSC83005 TH3005 PT9795 SD1229-1 2N5835 SD1300 BFY44 2N3553 CM25-12 SD1422 MM8011 2N4428 PT2677B SD1012 PT9795A SD1229 2N5841 SD1345 BFY70 2N3553 CM30-12A SD1488 MM8012 SD 1005-4 PT3500 2N3553 PT9796 SD 1290-3 2N5842 SD 1345 BFY90 SD1300 CM40-12 SD1488 MRA0913-2 SD1378 PT3501 , DM20-12BA SD1421 MRF237 SD1127 PT4544 SD1143 TPV596 TH596 2N6197 2N3553 BLX96 TH596 DM30-12BA SD1421


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PDF SD2N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N3553 mrf245 PT9788 PT8710 2N5642 BLY94 PT8811 2N4072 BLX66 PT8740
SD1076

Abstract: MRF245 2n918 BLY94 pt8710 PT8811 SD1238 PT9788 PT9780 MRF510
Text: TH2003 PT9733 SD1219 2N5713 2N5642 BFW47 2N3553 CD1617 2N5946 M M8006 SD 1300 MSC82005 TH2005 PT9734 SD , CM20-12A SD 1422 MM8010 2N4428 MSC83005 TH3005 PT9795 SD1229-1 2N5835 SD1300 BFY44 2N3553 CM25-12 SD1422 MM8011 2N4428 PT2677B SD1012 PT9795A SD1229 2N5841 SD1345 BFY70 2N3553 CM30-12A SD1488 MM8012 SD 1005-4 PT3500 2N3553 PT9796 SD 1290-3 2N5842 SD 1345 BFY90 SD1300 CM40-12 SD1488 MRA0913-2 SD1378 PT3501 , DM20-12BA SD1421 MRF237 SD1127 PT4544 SD1143 TPV596 TH596 2N6197 2N3553 BLX96 TH596 DM30-12BA SD1421


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PDF BAM20 2N5642 B25-12 2N60822N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1076 MRF245 2n918 BLY94 pt8710 PT8811 SD1238 PT9788 PT9780 MRF510
2N918

Abstract: SD1076 PT8811 MRF245 RF Transistor S10-12 PT8828 sd-1076 PT8710 PT9780 transistor pt4544
Text: CD1616 2N5945 MM8003 SD1006 MSC82003 TH2003 PT9733 SD1219 2N5713 2N5642 BFW47 2N3553 CD1617 2N5946 M , -1 2N5835 SD1300 BFY44 2N3553 CM25-12 SD1422 MM8011 2N4428 PT2677B SD1012 PT9795A SD1229 2N5841 SD1345 BFY70 2N3553 CM30-12A SD1488 MM8012 SD 1005-4 PT3500 2N3553 PT9796 SD 1290-3 2N5842 SD 1345 BFY90 , 2N6166 SD1019-5 BLX68 2N5946 DM20-12BA SD1421 MRF237 SD1127 PT4544 SD1143 TPV596 TH596 2N6197 2N3553 , J03030 SD 1488 MRF502 SD 1300 PT5656 SD 1202 2 N3294 SD1310 40290 2N3553 BLY61 2N4427 J03040 SD 1488


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PDF BAM20 22N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N918 SD1076 PT8811 MRF245 RF Transistor S10-12 PT8828 sd-1076 PT8710 PT9780 transistor pt4544
1996 - 2N3553

Abstract: TRANSISTOR 2n3553 inductor 4312 020 36640 MGC929 2N3553 equivalent 2N3553 NPN Planar choke
Text: DISCRETE SEMICONDUCTORS DATA SHEET 2N3553 Silicon planar epitaxial overlay transistor , transistor 2N3553 APPLICATIONS DESCRIPTION · The 2N3553 is intended for use in VHF and UHF , epitaxial overlay transistor 2N3553 LIMITING VALUES In accordance with the Absolute Maximum Rating , Philips Semiconductors Product specification Silicon planar epitaxial overlay transistor 2N3553 , . Philips Semiconductors Product specification Silicon planar epitaxial overlay transistor 2N3553


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PDF 2N3553 SC08a 2N3553 O-39/3 MBB199 TRANSISTOR 2n3553 inductor 4312 020 36640 MGC929 2N3553 equivalent 2N3553 NPN Planar choke
MRF245

Abstract: CM45-12A BFS51 SD1451 SD1076 2N6197 J03055 BLY22 PT8740 PT8811
Text: TH2003 PT9733 SD1219 2N5713 2N5642 BFW47 2N3553 CD1617 2N5946 M M8006 SD 1300 MSC82005 TH2005 PT9734 SD , CM20-12A SD 1422 MM8010 2N4428 MSC83005 TH3005 PT9795 SD1229-1 2N5835 SD1300 BFY44 2N3553 CM25-12 SD1422 MM8011 2N4428 PT2677B SD1012 PT9795A SD1229 2N5841 SD1345 BFY70 2N3553 CM30-12A SD1488 MM8012 SD 1005-4 PT3500 2N3553 PT9796 SD 1290-3 2N5842 SD 1345 BFY90 SD1300 CM40-12 SD1488 MRA0913-2 SD1378 PT3501 , DM20-12BA SD1421 MRF237 SD1127 PT4544 SD1143 TPV596 TH596 2N6197 2N3553 BLX96 TH596 DM30-12BA SD1421


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PDF XO-72 O-117 2N6082 BM80-12 SD1416 MM1601 MRF631 MRF245 CM45-12A BFS51 SD1451 SD1076 2N6197 J03055 BLY22 PT8740 PT8811
MRF245

Abstract: SD1076 BLX66 BLY22 CM45-12A sd1238 MM1669 PT8828 PT9780 BLY94
Text: TH2003 PT9733 SD1219 2N5713 2N5642 BFW47 2N3553 CD1617 2N5946 M M8006 SD 1300 MSC82005 TH2005 PT9734 SD , CM20-12A SD 1422 MM8010 2N4428 MSC83005 TH3005 PT9795 SD1229-1 2N5835 SD1300 BFY44 2N3553 CM25-12 SD1422 MM8011 2N4428 PT2677B SD1012 PT9795A SD1229 2N5841 SD1345 BFY70 2N3553 CM30-12A SD1488 MM8012 SD 1005-4 PT3500 2N3553 PT9796 SD 1290-3 2N5842 SD 1345 BFY90 SD1300 CM40-12 SD1488 MRA0913-2 SD1378 PT3501 , DM20-12BA SD1421 MRF237 SD1127 PT4544 SD1143 TPV596 TH596 2N6197 2N3553 BLX96 TH596 DM30-12BA SD1421


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PDF XO-72 O-117 02N6082 BM80-12 SD1416 MM1601 MRF631 MRF245 SD1076 BLX66 BLY22 CM45-12A sd1238 MM1669 PT8828 PT9780 BLY94
PT8740

Abstract: PT8811 PT9780 replace for 2N918 mrf245 PT9788 transistor pt4544 THOMSON-CSF PRODUCTS PT8710 PT8828
Text: 2N3553 CD1617 2N5946 M M8006 SD 1300 MSC82005 TH2005 PT9734 SD 1244 2N5714 2 N5643 BFW98 2N5944 CD 1802 , PT9795 SD1229-1 2N5835 SD1300 BFY44 2N3553 CM25-12 SD1422 MM8011 2N4428 PT2677B SD1012 PT9795A SD1229 2N5841 SD1345 BFY70 2N3553 CM30-12A SD1488 MM8012 SD 1005-4 PT3500 2N3553 PT9796 SD 1290-3 2N5842 SD , TPV596 TH596 2N6197 2N3553 BLX96 TH596 DM30-12BA SD1421 MRF238 SD1272 PT4556 SD1018 TPV597 TH597 2N6198 , 2N3927 BLY60 2N3632 J03030 SD 1488 MRF502 SD 1300 PT5656 SD 1202 2 N3294 SD1310 40290 2N3553 BLY61


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PDF T8710 SD1238 2N5126 2N918 2N5642 BM100-28 MM1603 MRF633 SD1145 PT8717 PT8740 PT8811 PT9780 replace for 2N918 mrf245 PT9788 transistor pt4544 THOMSON-CSF PRODUCTS PT8710 PT8828
PCR 406 J transistor

Abstract: transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a s41b smd transistor marking 28W 2N3553
Text: 2N3315, TX2N337S, 2N3553 , TX2N3553, 2144440 AND TX2N4440 POWER `his smclficctim is mcfhtory for , . Pj- P~ TA * 25"c Tc * 25° C nw VCBO w 2N3375, 2N4440 2.611 2N3553 , =100mAdc 2N3375 2N4440 Ic. 250 mAdc IIC. 50mAck 2N3553 1.0 -6S to .200 + 200 -65 to -200 .200 , . ~ad material, for type 2N3553 only, shafl be Kovaz or tiloy 52 and [inal finish shall be gold-plated , .- 200 tAdc -. -. . . -. I -. 2N4440 Power output 2N3553 Collector


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PDF MIL-s-19500/341B W0/341A 2N3315, TX2N337S, 2N3553, TX2N3553, TX2N4440 2N3375 gik16wwlhma lns81 PCR 406 J transistor transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a s41b smd transistor marking 28W 2N3553
MRF245

Abstract: PT8828 J0303 CM-501 BFY70 2N6096 sd1238 2N4932 RF Transistor S10-12 BLY94
Text: TH2003 PT9733 SD1219 2N5713 2N5642 BFW47 2N3553 CD1617 2N5946 M M8006 SD 1300 MSC82005 TH2005 PT9734 SD , CM20-12A SD 1422 MM8010 2N4428 MSC83005 TH3005 PT9795 SD1229-1 2N5835 SD1300 BFY44 2N3553 CM25-12 SD1422 MM8011 2N4428 PT2677B SD1012 PT9795A SD1229 2N5841 SD1345 BFY70 2N3553 CM30-12A SD1488 MM8012 SD 1005-4 PT3500 2N3553 PT9796 SD 1290-3 2N5842 SD 1345 BFY90 SD1300 CM40-12 SD1488 MRA0913-2 SD1378 PT3501 , DM20-12BA SD1421 MRF237 SD1127 PT4544 SD1143 TPV596 TH596 2N6197 2N3553 BLX96 TH596 DM30-12BA SD1421


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PDF CB-403) CB-410) CB-303) CB-4111 CB-306) CB-407) 1CB-404) CB-408) CB-409) 52N6082 MRF245 PT8828 J0303 CM-501 BFY70 2N6096 sd1238 2N4932 RF Transistor S10-12 BLY94
3570 1301

Abstract: MRF245 ad 40282 PT8828 BLX66 2N5913 pt8710 CM45-12A 2N4932 PT9780
Text: 2n3553 cd1617 2n5946 m m8006 sd 1300 msc82005 th2005 pt9734 sd 1244 2n5714 2 n5643 bfw98 2n5944 cd 1802 , pt9795 sd1229-1 2n5835 sd1300 bfy44 2n3553 cm25-12 sd1422 mm8011 2n4428 pt2677b sd1012 pt9795a sd1229 2n5841 sd1345 bfy70 2n3553 cm30-12a sd1488 mm8012 sd 1005-4 pt3500 2n3553 pt9796 sd 1290-3 2n5842 sd , tpv596 th596 2n6197 2n3553 blx96 th596 dm30-12ba sd1421 mrf238 sd1272 pt4556 sd1018 tpv597 th597 2n6198 , 2n3927 bly60 2n3632 j03030 sd 1488 mrf502 sd 1300 pt5656 sd 1202 2 n3294 sd1310 40290 2n3553 bly61


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PDF 2N918 BFP92 cb-233 3570 1301 MRF245 ad 40282 PT8828 BLX66 2N5913 pt8710 CM45-12A 2N4932 PT9780
2003 - 2N3553

Abstract: 2N3553 NPN 2N3553 datasheet high gain low capacitance NPN transistor
Text: 2N3553 MECHANICAL DATA Dimensions in mm (inches) NPN SILICON HIGH FREQUENCY TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. APPLICATIONS 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) The 2N3553 is designed for amplifier and , ://www.semelab.co.uk Document Number 5619 Issue 1 2N3553 ELECTRICAL CHARACTERISTICS (TA = 25°C unless


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PDF 2N3553 2N3553 205AD) 100kHz 100MHz 2N3553 NPN 2N3553 datasheet high gain low capacitance NPN transistor
9033 transistor

Abstract: PT8828 PT8740 2N4932 BLW27 BLX66 MM1669 sd1315 BLY94 PT8811
Text: SD1219 2N5713 2N5642 BFW47 2N3553 CD1617 2N5946 M M8006 SD 1300 MSC82005 TH2005 PT9734 SD 1244 2N5714 2 , 1422 MM8010 2N4428 MSC83005 TH3005 PT9795 SD1229-1 2N5835 SD1300 BFY44 2N3553 CM25-12 SD1422 MM8011 2N4428 PT2677B SD1012 PT9795A SD1229 2N5841 SD1345 BFY70 2N3553 CM30-12A SD1488 MM8012 SD 1005-4 PT3500 2N3553 PT9796 SD 1290-3 2N5842 SD 1345 BFY90 SD1300 CM40-12 SD1488 MRA0913-2 SD1378 PT3501 SD 1080 , -12BA SD1421 MRF237 SD1127 PT4544 SD1143 TPV596 TH596 2N6197 2N3553 BLX96 TH596 DM30-12BA SD1421 MRF238


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PDF 302N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N3553 9033 transistor PT8828 PT8740 2N4932 BLW27 BLX66 MM1669 sd1315 BLY94 PT8811
BFY70

Abstract: CM45-12A PT8828 THB598 PT8811 BLY22 PT8710 sd1451 MRF245 PT9780
Text: TH2003 PT9733 SD1219 2N5713 2N5642 BFW47 2N3553 CD1617 2N5946 M M8006 SD 1300 MSC82005 TH2005 PT9734 SD , CM20-12A SD 1422 MM8010 2N4428 MSC83005 TH3005 PT9795 SD1229-1 2N5835 SD1300 BFY44 2N3553 CM25-12 SD1422 MM8011 2N4428 PT2677B SD1012 PT9795A SD1229 2N5841 SD1345 BFY70 2N3553 CM30-12A SD1488 MM8012 SD 1005-4 PT3500 2N3553 PT9796 SD 1290-3 2N5842 SD 1345 BFY90 SD1300 CM40-12 SD1488 MRA0913-2 SD1378 PT3501 , DM20-12BA SD1421 MRF237 SD1127 PT4544 SD1143 TPV596 TH596 2N6197 2N3553 BLX96 TH596 DM30-12BA SD1421


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PDF 2N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N3553 BFY70 CM45-12A PT8828 THB598 PT8811 BLY22 PT8710 sd1451 MRF245 PT9780
multi-emitter transistor

Abstract: 2NS553 2n3553
Text: 2N3553 VHP Silicon NPN Power Transistor The 2N3553 is a silicon epitaxial planar transistor of NPN structure. This device is intended for large signal, high power oscillator-amplifier application in the VHFUHF (WOMC to 400MC) region , for UHF operation. Absolute Maximum Ratings (25°C except where noted) 2N3553 VCBO VCEO VCBV


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PDF 2N3553 2N3553 400MC) 2NS553 200mA* 250mA 100mA multi-emitter transistor
t 3866 power transistor

Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 transistor t 3866 2N3553 2n RF transistor c 3866 transistor
Text:  2N3553 SILICON NPN VHF POWER TRANSISTOR _571 HIGH GAIN DRIVER FOR 28 V FM APPLICATIONS • 2.5 Wat 175 MHz • Minimum Gain 10 dB mechanical data t -T- —6,6— -12,7 mm- J T I , Instruments 2- 2N3553 SILICON NPN VHF POWER TRANSISTOR electrical characteristics at 25 °C case , ^300 fls. 2-306 Texas Instruments 2N3553 SILICON NPN VHF POWER TRANSISTOR TYPICAL CHARACTERISTICS , FIGURE 3 Texas Instruments 2-307 2N3553 SILICON NPN VHF POWER TRANSISTOR ABSOLUTE MAXIMUM AREA OF


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PDF 2N3553 O-117 O-128 O-131 O-129 20PEP t 3866 power transistor transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 transistor t 3866 2N3553 2n RF transistor c 3866 transistor
BFR90 transistor

Abstract: 2n5583 mrf502 transistor 2N5160 transistor bfr96 MRF531 BFR91 BFR91 transistor 2N3866 2N5032
Text: ( Device Type pout Output Power gPE Power Gain dB Min. VCC Supply Voltage Volts Package 106-175 MHz, VHF AM TRANSISTORS f 2N3866 1.0 10 28 TO-39 N 2N3553 2.5 10 28 TO-39 2N5641 7.0 8.4 28 144B-04 2N 5642 20 8.2 28 145A-07 2N5643 40 7.6 28 145A-07 ^ 2N6166 100 6.0 28 211-10 J 225-400 MHz, UHF AM TRANSISTORS MRF509 1.0 10 28 207A-01 2N3866 1.0 10 28 TO-39 MRF313 1.0 16 , MRF501 MRF501 2N3866 2N4073 MM4019 2N3553 MM4019 2N3553 PNP NPN 0.5 V MRF532* MRF531 * MRF532


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PDF 2N3866 2N3553 2N5641 144B-04 45A-07 2N5643 2N6166 MRF509 07A-01 BFR90 transistor 2n5583 mrf502 transistor 2N5160 transistor bfr96 MRF531 BFR91 BFR91 transistor 2N5032
2N3553

Abstract: 2N3375 2N3733 2N 3375
Text: ) 362-8500 TWX 510-661-7299 2N 3375 2N 3632 2N3553 2N 3733 2.5 W /3.0 W /1 0 W /l 3.5 W, 28 V , E R A T U R E ( T c ) = 2 5 ° C w (P o u x )_ W A T T S h 2N3553 POWER OUTPUT VS FREQUENCY , B TE E OUT Z l =50 O H M S IN = 50 O H M S 2N3632 (175 mHz OPERATION) 2N3553 (175 mHz OPERATION , mHz OPERATION) + VC C = 2 8 V < 2STUB TUNER STUB TUN ER BIAS Z, =50 O HM S 2N3553 c -2 5 "i


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PDF 7T2TE37 2N3553 2N3733 2N3375 2N3733 2N 3375
2N5160

Abstract: 2N5583 MRF531 2n3866 noise BFR96 MFR901 BFR90 amplifier 2N5032 2N5943 BFR90
Text: MRF501 MRF501 2N3866 2N4073 MM4019 2N3553 MM4019 2N3553 PNP NPN 0.5 V MRF532* MRF531 * MRF532


OCR Scan
PDF 2N5829 2N5031 MRF904 2N4957 2N5032 2N5160 2N5583 MRF531 2n3866 noise BFR96 MFR901 BFR90 amplifier 2N5943 BFR90
1999 - 2N3553

Abstract: 2N3553 NPN 2N3553 equivalent transistor 2n3553
Text: 2N3553 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI 2N3553 is Designed for Amplifier, Oscillator and Driver Applications Covering VHF-UHF Frequency. PACKAGE STYLE TO- 39 MAXIMUM RATINGS IC 1.0 A VCE 40 V PDISS 7.0 W @ TC = 25 C O O O O O TJ -65 C to +200 C TSTG -65 C to +200 C JC 25 C/W 1 = EMITTER 2 = BASE 3 = COLLECTOR O CHARACTERISTICS SYMBOL BVCEO ICEX O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM IC = 200


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