The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
2N3507AU4 Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, U4 3 PIN
JANTXV2N3507AL Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3
JANTX2N3507AL Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3
JANTXV2N3507A Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3
JANTX2N3507A Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3
JAN2N3507 Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-205, SIMILAR TO TO-39, 3 PIN
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Search Stock (30)

  You can filter table by choosing multiple options from dropdownShowing 30 results of 30
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2N3507 Semtech Corporation Bristol Electronics 20 - -
2N3507 Microsemi Corporation Chip1Stop 19 $25.07 $21.39
2N3507 Motorola Semiconductor Products Bristol Electronics 4 $13.20 $13.20
2N3507 GSI Technology Bristol Electronics 4 $13.20 $13.20
2N3507AJAN Microchip Technology Inc Avnet - $12.49 $11.09
2N3507AL Microchip Technology Inc Avnet - $10.39 $9.29
2N3507ALJAN Microchip Technology Inc Avnet - $12.49 $11.09
2N3507AU4 Microchip Technology Inc Avnet - $51.39 $45.89
2N3507AU4JAN Microchip Technology Inc Avnet - - -
2N3507AU4JANTX Microchip Technology Inc Avnet - - -
2N3507AU4JANTXV Microchip Technology Inc Avnet - - -
2N3507JAN Microchip Technology Inc Avnet - $22.79 $20.39
2N3507L Microchip Technology Inc Avnet - $10.39 $9.29
2N3507L Semicoa Semiconductors Bristol Electronics 15 - -
2N3507U4 Microchip Technology Inc Avnet - $51.39 $45.89
2N3507U4JAN Microchip Technology Inc Avnet - - -
2N3507U4JANTX Microchip Technology Inc Avnet - - -
2N3507U4JANTXV Microchip Technology Inc Avnet - - -
JAN2N3507 Microsemi Corporation Future Electronics - $25.58 $20.45
JAN2N3507 Motorola Semiconductor Products Bristol Electronics 1 - -
JAN2N3507 Microsemi Corporation Bristol Electronics 1 - -
JAN2N3507 Microsemi Corporation Chip1Stop 2,420 $13.75 $11.73
JANS2N3507AU4 Microchip Technology Inc Avnet - - -
JANTX2N3507 Microsemi Corporation New Advantage Corporation 63 $23.34 $21.79
JANTX2N3507 Microsemi Corporation Chip1Stop 194 $16.14 $13.77
JANTX2N3507 Motorola Semiconductor Products Bristol Electronics 18 $14.40 $14.40
JANTX2N3507 CDCG Bristol Electronics 7 - -
JANTX2N3507 Microsemi Corporation Future Electronics 65 $16.34 $13.07
JANTX2N3507A Motorola Semiconductor Products Bristol Electronics 5 - -
JANTX2N3507L CDCG Bristol Electronics 30 - -

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2N3507 datasheet (53)

Part Manufacturer Description Type PDF
2N3507 Defense Supply Center Columbus NPN Silicon Switching Transistor Original PDF
2N3507 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=3 / Hfe=30/120 / fT(Hz)=60M / Pwr(W)=1 Original PDF
2N3507 Semico Type 2N3507 Geometry 1506 Polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=3 / Hfe=30/120 / fT(Hz)=60M / Pwr(W)=1 Original PDF
2N3507 Semico Chip: geometry 1506 polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=3 / Hfe=30/120 / fT(Hz)=60M / Pwr(W)=1 Original PDF
2N3507 Semico TRANS GP BJT NPN 50V 3A 3TO-39 - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=3 / Hfe=30/120 / fT(Hz)=60M / Pwr(W)=1 Original PDF
2N3507 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
2N3507 API Electronics Short form transistor data Scan PDF
2N3507 API Electronics 5 Amp NPN Transistors Scan PDF
2N3507 API Electronics Short form transistor data Scan PDF
2N3507 General Semiconductor Low Frequency Silicon Power Transistor (Also available in JAN & JANTX) Scan PDF
2N3507 Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N3507 Motorola Power Transistor Selection Guide Scan PDF
2N3507 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N3507 Others Semiconductor Master Cross Reference Guide Scan PDF
2N3507 Others Shortform Transistor Datasheet Guide Scan PDF
2N3507 Others Vintage Transistor Datasheets Scan PDF
2N3507 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N3507 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N3507 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N3507 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF

2N3507 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N3506 MOTOROLA

Abstract: 2N3507 2N3506 2N3507 JAN IN MOTOROLA 2N3507 JAN MHP-F
Text: bol M ax 35 175 Unit aC/W Sym bol VCEO VCBO Veb o ic Pd pd 2N3S06 40 60 2N3507 50 80 Unit Vdc Vdc Vdc Ade Watt m W /X Watts mW/°C °C 2 1 2N3506 2N3507 CASE 79-04, STYLE 1 TO-39 (TO , 100°C) 4.0 Vdc) 4.0 Vdc, Ta = 1008 C) 2N3506 2N3507 'B L 2N3506 2N3507 2N3506 2N3507 2N3506 2N3507 V , 2N3507 2N35Û6 2N3507 2N3506 2N3507 2N3506 2N3507 (Ic - 500 mAdc, Iß = 50 mAdc) dC = 1*5 Ade, Ib = 150


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PDF 2N3S06 2N3507 2N3506 2N3507 O-205AD) 00flb343 2N3506, 2N3S07 2N3506 MOTOROLA 2N3507 JAN IN MOTOROLA 2N3507 JAN MHP-F
2011 - 2N3507 equivalent

Abstract: 2N3506 2N3507
Text: 2N3506 thru 2N3507A NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature low , ://www.microsemi.com. FEATURES · · · · · JEDEC registered 2N3506 through 2N3507A series. RoHS compliant versions , -205AD) Package Also available in: TO-5 package (long-leaded) 2N3506L ­ 2N3507AL APPLICATIONS / BENEFITS · , ) 2N3506U4 ­ 2N3507AU4 MAXIMUM RATINGS Parameters / Test Conditions Collector-Emitter Voltage


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PDF 2N3506 2N3507A MIL-PRF-19500/349 T4-LDS-0016, 2N3507 equivalent 2N3507
2N3507

Abstract: 2N3506 2N3506A 2N3506AL 2N3506L 2N3507A 2N3507L 2N3507 equivalent
Text: 2N3507 , 2N3507A , 2N3507L , 2N3507AL , 2N3507U4 2N3507AU4 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3506U4 2N3506AU4 2N3507 , 2N3507A , 2N3507L , 2N3507AL , 2N3507U4 2N3507AU4 V dc Min Max 40 , , 2N3507L , 2N3507A , 2N3507AL , 2N3507U4 , AND 2N3507AU4 , JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP , derating for 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3507 , 2N3507A , 2N3507L , and 2N3507AL. 20 MIL-PRF , TJ and TSTG W 2N3506, 2N3506A, 2N3506L, 2N3506AL 2N3506U4 2N3507 , 2N3507A , 2N3507L , 2N3507AL


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PDF MIL-PRF-19500/349H MIL-PRF-19500/349G 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3506U4, 2N3506AU4, 2N3507, 2N3507L, 2N3507 2N3506 2N3506A 2N3506AL 2N3506L 2N3507A 2N3507L 2N3507 equivalent
2004 - 2n3507

Abstract: 2N3506
Text: DATA SHEET 2N3506 2N3507 NPN SILICON TRANSISTOR JEDEC TO-39 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3506, 2N3507 types are Silicon NPN Epitaxial Planar Transistors designed for general purpose , ,Tstg JA JC 2N3506 60 ` 40 5.0 3.0 1.0 5.0 2N3507 80 50 UNITS V V V A W W °C °C/W °C/W -65 , 2N3507 MIN MAX UNITS µA µA µA µA V V V V V V V V V IC=100µA IC=10mA IE=10µA IC=500mA, IB=50mA IC , (Continued) R1 2N3506 / 2N3507 NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS CONTINUED (TA


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PDF 2N3506 2N3507 2N3506, BVEB10V, 100kHz 150mA
2010 - 2N3507

Abstract: No abstract text available
Text: 2N3507 Chip: 5.0V; 3.0A; geometry 1506; polarity NPN 8.75 Transistors. http://store.americanmicrosemiconductor.com/ 2n3507.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N3507 2N3507 C hip: 5 .0 V; 3 .0 A; geo m et ry 1 5 0 6 ; po larit y NPN Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to , Manufacturer Partnumber: List Price: Our Price: You Save: Americanmicrosemi 2N3507 $ 10.94 $ 8.75 $ 2.19


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PDF 2N3507 com/2n3507 2N3507
2008 - 2N3507

Abstract: 2N3506 2N3506A 2N3507 JANTX 2N3507L 2N3507AL 2N3507A 2N3506L 2N3506AL 072040
Text: per MIL-PRF-19500/349 DEVICES LEVELS 2N3506 2N3506A 2N3506L 2N3506AL 2N3507 2N3507A 2N3507L 2N3507AL JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N3506 2N3507 Unit Collector-Emitter Voltage VCEO 40 , ) Parameters / Test Conditions Symbol Min. 2N3506 2N3507 V(BR)CEO 40 50 2N3506 2N3507 , 500mAdc, VCE = 1Vdc 2N3506 2N3507 hFE 50 35 250 175 Forward-Current Transfer Ratio IC =


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PDF MIL-PRF-19500/349 2N3506 2N3506A 2N3506L 2N3506AL 2N3507 2N3507A 2N3507L 2N3507AL 2N3507 2N3506 2N3506A 2N3507 JANTX 2N3507L 2N3507AL 2N3507A 2N3506L 2N3506AL 072040
2004 - Not Available

Abstract: No abstract text available
Text: LivePerson l l l l Submit ¡ ¡ ¡ 2N3507 Availability Buy 2N3507 at our online store ! 2N3507 Information Cate gory » Transistors Class » Transistors; Bipolar; Si NPN Power Type » Transistors; Bipolar; Si NPN Power 2N3507 Specifications Milita ry/High-R e l : N V(BR )C EO (V) : 50 V


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PDF 2N3507
2N3506

Abstract: 2N3506A 2N3506AL 2N3506L 2N3507 2N3507A 2N3507AL 2N3507L
Text: , SWITCHING TYPES 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3507 , 2N3507L , 2N3507A , 2N3507AL , JAN, JANTX, JANTXV , , NPN, SILICON, SWITCHING TYPES 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3507 , 2N3507L , 2N3507A , 2N3507AL , ) PT (3) TA = +25°C VCBO VCEO VEBO TC = +25°C 2N3506 2N3506A 2N3507 2N3507A 2N3506 2N3506A IC TJ and TSTG RJA °C -65 to +200 °C/W 2N3507 2N3507A W W , 2N3506 2N3507 2N3506A 2N3507A 2N3506A 2N3507A |hfe| Cobo IC = 1.5 A dc IB = 150 mA dc f =


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PDF MIL-PRF-19500/349E MIL-PRF-19500/349D 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3507, 2N3507L, 2N3507A, 2N3507AL, 2N3506 2N3506A 2N3506AL 2N3506L 2N3507 2N3507A 2N3507AL 2N3507L
2n3507

Abstract: No abstract text available
Text: p semcofl ¿ 8888 88888 |M iw Bffi .rfHHHHM iHB HHHHh . m sssBP itittn n n hh h k n n h h h -. >>iftBh 2N3507 $ id L S E M IC O N D U C T O R S G eneric Part Num ber: 2N3507 Type 2N3507 G eom etry 1506 P olarity NPN Q ual Level: JAN - JA N TXV REF: M IL-P R F -19 5 0 0 /3 4 9 Features: • General-purpose , °C Operating Junction Temperature Storage Temperature & semicofl Data Sheet No. 2N3507 s S , S e M IC


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PDF 2N3507 MIL-PRF-19500/349 2n3507
1999 - 2N3507

Abstract: No abstract text available
Text: Data Sheet No. 2N3507 Generic Part Number: 2N3507 Type 2N3507 Geometry 1506 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/349 Features: · General-purpose silicon transistor for switching and amplifier applications. · Housed in TO-39 case. · Also available in chip form using the 1506 chip geometry. · The Min and Max limits shown are per MIL-PRF , o C Data Sheet No. 2N3507 Electrical Characteristics o TC = 25 C unless otherwise


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PDF 2N3507 MIL-PRF-19500/349 MIL-PRF-19500/349 2N3507
2N3507

Abstract: 2N3506 2N350
Text: SEMICONDUCTOR! TECHNICAL DATA 2N3506. 2N3507. NPN Silicon Small-Signal Transistors designed , 5.0 3.0 2N3507 50 80 Unit Vdc Vdc Vdc Ade Watts m W /'C Watts W /C C ·c PT (§> Ta = 25 , = 5 0 v d c ) (ic » 0.5 Ade. vce V(BR)CEO 2N3506 2N3507 V(BR)CBO 2N3506 2N3507 V(BR)EBO 40 50 , 250 200 = 1 0 v d c - t a = _55 c ' 2N3507 (lc = 500 mAdc, Vc e = 1 0 vd c| (ic - 1 5 Ade, V c , !1) (IC -t.S A d c , Vc ^ e Symbol ICEX 2N3506 2N3507 »FE 2N3506 2N3507 Mm - Max 10 1.0 200 150


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PDF 2N3506. 2N3507. 2N3506 2N3507 2N3506 2N3507 2N350
1999 - 1506

Abstract: 2N3507 2C3506 2N3506 2N3506L 2N3507L 22KA chip type geometry
Text: Data Sheet No. 2C3506 Generic Packaged Parts: Chip Type 2C3506 Geometry 1506 Polarity NPN 2N3506, 2N3507 Chip type 2C3506 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for high current, high speed saturated switching and core driver applications. 2N3506, 2N3506L, 2N3507 , 2N3507L Features: High current and high speed capability Mechanical Specifications Metallization Bonding Pad Size Top Backside


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PDF 2C3506 2N3506, 2N3507 2C3506 2N3506L, 2N3507, 2N3507L 1506 2N3507 2N3506 2N3506L 2N3507L 22KA chip type geometry
2002 - 2N3507

Abstract: 2N3507J 2N3507JS 2N3507JV 2N3507JX 2N3507 JAN
Text: 2N3507 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: · General purpose switching transistor · Low power · NPN silicon transistor · Screening and processing per MIL-PRF-19500 Appendix E · JAN level ( 2N3507J ) · JANTX level ( 2N3507JX ) · JANTXV level ( 2N3507JV ) · JANS level ( 2N3507JS ) · QCI to the applicable level · 100% die visual inspection , 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N3507 Silicon NPN Transistor Data Sheet


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PDF 2N3507 MIL-PRF-19500 2N3507J) 2N3507JX) 2N3507JV) 2N3507JS) MIL-STD-750 MIL-PRF-19500/349 2N3507 2N3507J 2N3507JS 2N3507JV 2N3507JX 2N3507 JAN
2N3506

Abstract: 2N3507 2N3506JTX 2N3506 MOTOROLA 2N3507JTX 2NW06 15-ADO
Text: MOTOROU Orderthis dooument bv2N850WWD SEMICONDUCTOR TECHNICAL DATA 2N3506JTX, JTXV 2N3507JTX , JTXV Processed per MIL+-~9500/349 NPN Silicon Small+ ignal Transistors . . designed for , ,VCE = 2.0 Vdc) (IC = 2.5 Adc, VCE = 3.0 Vdc) 50 40 30 25 25 35 30 25 20 17 2N3507 , 200 150 Min Max lc~ ~EB = 4.$~W{kCE = 40 V*) WEB =,~tdi~g$VCE = 60 V*) 2N3506 2N3507 DC Cu~~ln(l) Mdc - hFE (l&&%#A*, VCE= 2.0 Vdc) ,:. ;~ , ~,., `i> 2N3506 2N3507


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PDF bv2N850WWD 2N3506JTX, 2N3507JTX, TM05AD 2NW06 2NW07 300Vdc) 2N3506 1PHW41011-2 2NS50MWD 2N3506 2N3507 2N3506JTX 2N3506 MOTOROLA 2N3507JTX 15-ADO
2007 - 2N3507

Abstract: 2N3507J 2N3507JS 2N3507JV 2N3507JX
Text: 2N3507 Silicon NPN Transistor D a ta S h e e t Description Applications SEMICOA offers: · General purpose switching transistor · Low power · NPN silicon transistor · Screening and processing per MIL-PRF-19500 Appendix E · JAN level ( 2N3507J ) · JANTX level ( 2N3507JX ) · JANTXV level ( 2N3507JV ) · JANS level ( 2N3507JS ) · QCI to the applicable level · 100% die visual inspection per MIL-STD , www.SEMICOA.com Page 1 of 2 2N3507 Silicon NPN Transistor D a ta S h e e t ELECTRICAL CHARACTERISTICS


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PDF 2N3507 MIL-PRF-19500 2N3507J) 2N3507JX) 2N3507JV) 2N3507JS) MIL-STD-750 MIL-PRF-19500/349 2N3507 2N3507J 2N3507JS 2N3507JV 2N3507JX
2010 - Not Available

Abstract: No abstract text available
Text: 2N3507 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level ( 2N3507J ) • JANTX level ( 2N3507JX ) • JANTXV level ( 2N3507JV ) • JANS level ( 2N3507JS ) • QCI to the applicable level • 100% die visual , 2N3507 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA


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PDF 2N3507 MIL-PRF-19500 2N3507J) 2N3507JX) 2N3507JV) 2N3507JS) MIL-STD-750 MIL-PRF-19500/349
2010 - Not Available

Abstract: No abstract text available
Text: 2N3507 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: · Screening and processing per MIL-PRF-19500 Appendix E · JAN level ( 2N3507J ) · JANTX level ( 2N3507JX ) · JANTXV level ( 2N3507JV ) · JANS level ( 2N3507JS ) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS · Radiation testing (total dose) upon request , Page 1 of 2 www.SEMICOA.com 2N3507 Silicon NPN Transistor Data Sheet ELECTRICAL


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PDF 2N3507 MIL-PRF-19500 2N3507J) 2N3507JX) 2N3507JV) 2N3507JS) MIL-STD-750 MIL-PRF-19500/349
Not Available

Abstract: No abstract text available
Text: 2N3507+JANTX Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)50 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain.150 @I(C) (A) (Test Condition)1.5 @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq60M @I(C) (A) (Test Condition) @V(CE) (V


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PDF 2N3507 Freq60M time30n
2010 - Not Available

Abstract: No abstract text available
Text: 2N3507 Silicon NPN Transistor Data Sheet Description SEMICOA Corporation offers: · Screening and processing per MIL-PRF-19500 · JAN level ( 2N3507J ) · JANTX level ( 2N3507JX ) · JANTXV level ( 2N3507JV ) · JANS level ( 2N3507JS ) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS · Radiation testing (total dose) upon request Applications · General , Page 1 of 2 www.SEMICOA.com 2N3507 Silicon NPN Transistor Data Sheet ELECTRICAL


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PDF 2N3507 MIL-PRF-19500 2N3507J) 2N3507JX) 2N3507JV) 2N3507JS) MIL-STD-750 MIL-PRF-19500/349
Not Available

Abstract: No abstract text available
Text: 2N3507+JANTXV Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)50 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain.150 @I(C) (A) (Test Condition)1.5 @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq60M @I(C) (A) (Test Condition) @V(CE) (V


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PDF 2N3507 Freq60M time30n
Not Available

Abstract: No abstract text available
Text: 2N3507+JAN Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)50 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain.150 @I(C) (A) (Test Condition)1.5 @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq60M @I(C) (A) (Test Condition) @V(CE) (V


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PDF 2N3507 Freq60M time30n
2N3506

Abstract: No abstract text available
Text: MOTOROLA SC -CDIODES/OPTO} ~ 3M DE | f c , 3 b ? 2 S S 0 0 3 ? 'ifl5 1 |~~ 6 3 6 7 2 5 5 MOTOROLA SC < DIODES/OPTO) 34C 37985 D SILICON SM ALL-SIGNAL TRANSISTOR DICE (continued) T - 3 5" D IE NO. - NPN LINE SO U R C E - DSL22 2C3506 Si T h is die provides perform ance similar to that of the following device types: 2N3506 2N3507 D esig ned for core driver applications. METALLIZATION - Top


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PDF DSL22 2C3506 2N3506 2N3507
2002 - Not Available

Abstract: No abstract text available
Text: 2N3507 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 50V 5.08 (0.200) typ. IC = 3.0A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS


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PDF 2N3507 O205AD) 19-Jun-02
2n6190

Abstract: No abstract text available
Text: * 2N3507 * 2N3418* 2N5336 2N5337 2N5338 2N5339 2N5681 2N5682 1.0/2.0 2.0/2.0 2.0/2.0 2.0/2.0 2.0/2.0 .25


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PDF T0-205 2N3439* 2N3440* 2N3506* 2N3507* 2N3418* 2N5336 2N5337 2N5338 2N5339 2n6190
Not Available

Abstract: No abstract text available
Text: tt < o & mà PACKAGE TO-204 (TO-3) D E V IC I TYPE 2N5741 2N5742 2N6246 2N6247 BV«0 VO LTS 60 100 60 80 'C AM PS 20.0 20.0 15.0 15.0 hf l m in / m a x 20-80 20-80 20-100 20-100 ·c @ vc i A V 10.0/5.0 10.0/5.0 7.0/5.0 6.0/5.0 m ax VO LTS 1.5 1.5 2.5 3.5 A A 10.0/1.0 10.0/1.0 15.0/1.5 15.0/1.5 N P N P O W E R TRAN SISTO RS PACKAGE PEAK D E V IC E TYPE 2N3439"* 2N3440* 2N3506" 2N3507 * 2N3418* 2N5336 2N5337 2N5338 2N5339 2N5681 2N5682 b v ceo ^CE


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PDF O-204 2N5741 2N5742 2N6246 2N6247 2N3439" 2N3440* 2N3506" 2N3507* 2N3418*
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