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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
JANTXV2N3506AL Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3
JANTXV2N3506A Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3
JAN2N3506A Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3
JANTX2N3506 Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-205, SIMILAR TO TO-39, 3 PIN
JANTX2N3506AL Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3
JAN2N3506 Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-205, SIMILAR TO TO-39, 3 PIN
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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
2N3506 Solid State Devices Inc (SSDI) Bristol Electronics 12 $12.00 $9.00
2N3506 Signetics Chip One Exchange 200 - -
2N3506 SEMICA Bristol Electronics 92 - -
2N3506 Advanced Semiconductor Inc Bristol Electronics 10 $12.00 $9.00
2N3506AJAN Microchip Technology Inc Avnet - $12.49 $11.09
2N3506AL Microchip Technology Inc Avnet - $10.39 $9.29
2N3506ALJAN Microchip Technology Inc Avnet - $12.49 $11.09
2N3506AU4JAN Microchip Technology Inc Avnet - - -
2N3506AU4JANTX Microchip Technology Inc Avnet - - -
2N3506AU4JANTXV Microchip Technology Inc Avnet - - -
2N3506JANTX Microwave Semiconductor ComS.I.T. 48 - -
2N3506L Microchip Technology Inc Avnet - $10.39 $9.29
2N3506U4JAN Microchip Technology Inc Avnet - - -
2N3506U4JANTX Microchip Technology Inc Avnet - - -
2N3506U4JANTXV Microchip Technology Inc Avnet - - -
JANS2N3506AU4 Microchip Technology Inc Avnet - - -
JANTX2N3506 CCSX Bristol Electronics 23 $18.00 $18.00
JANTX2N3506 Microsemi Corporation Bristol Electronics 23 $13.80 $13.80

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2N3506 datasheet (53)

Part Manufacturer Description Type PDF
2N3506 Defense Supply Center Columbus NPN Silicon Switching Transistor Original PDF
2N3506 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=3 / Hfe=40/120 / fT(Hz)=60M / Pwr(W)=1 Original PDF
2N3506 Semico Chip: geometry 1506 polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=3 / Hfe=40/120 / fT(Hz)=60M / Pwr(W)=1 Original PDF
2N3506 Semico Type 2N3506 Geometry 1506 Polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=3 / Hfe=40/120 / fT(Hz)=60M / Pwr(W)=1 Original PDF
2N3506 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
2N3506 API Electronics Short form transistor data Scan PDF
2N3506 API Electronics 5 Amp NPN Transistors Scan PDF
2N3506 API Electronics Short form transistor data Scan PDF
2N3506 General Semiconductor Low Frequency Silicon Power Transistor (Also available in JAN & JANTX) Scan PDF
2N3506 Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N3506 Motorola European Master Selection Guide 1986 Scan PDF
2N3506 Motorola Power Transistor Selection Guide Scan PDF
2N3506 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N3506 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N3506 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N3506 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N3506 Others Transistor Shortform Datasheet & Cross References Scan PDF
2N3506 Others Basic Transistor and Cross Reference Specification Scan PDF
2N3506 Others Shortform Transistor PDF Datasheet Scan PDF
2N3506 Others Shortform Transistor PDF Datasheet Scan PDF

2N3506 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - 2N3507 equivalent

Abstract: 2N3506 2N3507
Text: 2N3506 thru 2N3507A NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature low , ://www.microsemi.com. FEATURES · · · · · JEDEC registered 2N3506 through 2N3507A series. RoHS compliant versions , -205AD) Package Also available in: TO-5 package (long-leaded) 2N3506L ­ 2N3507AL APPLICATIONS / BENEFITS · , ) 2N3506U4 ­ 2N3507AU4 MAXIMUM RATINGS Parameters / Test Conditions Collector-Emitter Voltage


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PDF 2N3506 2N3507A MIL-PRF-19500/349 T4-LDS-0016, 2N3507 equivalent 2N3507
2008 - 2N3507

Abstract: 2N3506 2N3506A 2N3507 JANTX 2N3507L 2N3507AL 2N3507A 2N3506L 2N3506AL 072040
Text: per MIL-PRF-19500/349 DEVICES LEVELS 2N3506 2N3506A 2N3506L 2N3506AL 2N3507 2N3507A , ) Parameters / Test Conditions Symbol 2N3506 2N3507 Unit Collector-Emitter Voltage VCEO 40 , ) Parameters / Test Conditions Symbol Min. 2N3506 2N3507 V(BR)CEO 40 50 2N3506 2N3507 , 500mAdc, VCE = 1Vdc 2N3506 2N3507 hFE 50 35 250 175 Forward-Current Transfer Ratio IC = 1.5Adc, VCE = 2Vdc 2N3506 2N3507 hFE 40 30 200 150 Forward-Current Transfer Ratio IC =


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PDF MIL-PRF-19500/349 2N3506 2N3506A 2N3506L 2N3506AL 2N3507 2N3507A 2N3507L 2N3507AL 2N3507 2N3506 2N3506A 2N3507 JANTX 2N3507L 2N3507AL 2N3507A 2N3506L 2N3506AL 072040
2N3506 MOTOROLA

Abstract: 2N3507 2N3506 2N3507 JAN IN MOTOROLA 2N3507 JAN MHP-F
Text: Vdc Vdc Vdc Ade Watt m W /X Watts mW/°C °C 2 1 2N3506 2N3507 CASE 79-04, STYLE 1 TO-39 (TO , 100°C) 4.0 Vdc) 4.0 Vdc, Ta = 1008 C) 2N3506 2N3507 'B L 2N3506 2N3507 2N3506 2N3507 2N3506 2N3507 V , c e = 3.0 Vdc) {Ic = 3.0 Ade, V c e = 5.0 Vdc) Collector-Emitter Saturation Voltaged) 2N3506 2N3507 2N35Û6 2N3507 2N3506 2N3507 2N3506 2N3507 (Ic - 500 mAdc, Iß = 50 mAdc) dC = 1*5 Ade, Ib = 150 , 00flb343 2N3506 , 2N3S07 S | C j Sym bol M in - - - ELECTRICAL CHARACTERISTICS (continued) (T


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PDF 2N3S06 2N3507 2N3506 2N3507 O-205AD) 00flb343 2N3506, 2N3S07 2N3506 MOTOROLA 2N3507 JAN IN MOTOROLA 2N3507 JAN MHP-F
1999 - 2N3506

Abstract: No abstract text available
Text: Data Sheet No. 2N3506 Generic Part Number: 2N3506 Type 2N3506 Geometry 1506 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/349 Features: · General-purpose silicon transistor for switching and amplifier applications. · Housed in TO-39 case. · Also available in chip form using the 1506 chip geometry. · The Min and Max limits shown are per MIL-PRF , +200 o C o C Data Sheet No. 2N3506 Electrical Characteristics TC = 25oC unless


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PDF 2N3506 MIL-PRF-19500/349 MIL-PRF-19500/349 2N3506
2004 - 2n3507

Abstract: 2N3506
Text: DATA SHEET 2N3506 2N3507 NPN SILICON TRANSISTOR JEDEC TO-39 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3506 , 2N3507 types are Silicon NPN Epitaxial Planar Transistors designed for general purpose , ,Tstg JA JC 2N3506 60 ` 40 5.0 3.0 1.0 5.0 2N3507 80 50 UNITS V V V A W W °C °C/W °C/W -65 , =100°C 60 40 5.0 0.5 1.0 1.5 1.0 1.4 2.0 80 50 5.0 0.5 1.0 1.5 1.0 1.4 2.0 2N3506 MIN MAX 1.0 150 1.0 150 , (Continued) R1 2N3506 / 2N3507 NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS CONTINUED (TA


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PDF 2N3506 2N3507 2N3506, BVEB10V, 100kHz 150mA
2N3507

Abstract: 2N3506 2N3506A 2N3506AL 2N3506L 2N3507A 2N3507L 2N3507 equivalent
Text: , NPN, SILICON, SWITCHING, TYPES 2N3506 , 2N3506A , 2N3506L , 2N3506AL , 2N3506U4 , 2N3506AU4 , 2N3507 , 100 mA dc 100 kHz f 1 MHz 2N3506 , 2N3506A , 2N3506L , 2N3506AL , 2N3506U4 2N3506AU4 , impedance graph (RJA) for 2N3506 , 2N3506A , 2N3506L , 2N3506AL , 2N3506U4 , 2N3506AU4 , 2N3507, 2N3507A, 2N3507L , TJ and TSTG W 2N3506 , 2N3506A , 2N3506L , 2N3506AL 2N3506U4 2N3507, 2N3507A, 2N3507L, 2N3507AL , * FIGURE 4. Temperature-power derating for 2N3506 , 2N3506A , 2N3506L , 2N3506AL , 2N3506U4 , 2N3507, 2N3507A


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PDF MIL-PRF-19500/349H MIL-PRF-19500/349G 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3506U4, 2N3506AU4, 2N3507, 2N3507L, 2N3507 2N3506 2N3506A 2N3506AL 2N3506L 2N3507A 2N3507L 2N3507 equivalent
2004 - Not Available

Abstract: No abstract text available
Text: LivePerson l l l l Submit ¡ ¡ ¡ 2N3506 Availability Buy 2N3506 at our online store ! 2N3506 Information Cate gory » Transistors Class » Transistors; Bipolar; Si NPN Power Type » Transistors; Bipolar; Si NPN Power 2N3506 Specifications Milita ry/High-R e l : N V(BR )C EO (V) : 40 V


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PDF 2N3506
2N3507

Abstract: 2N3506 2N350
Text: SEMICONDUCTOR! TECHNICAL DATA 2N3506. 2N3507. NPN Silicon Small-Signal Transistors designed , Emitter-Base Voltage Collector Current - Continuous Power Dissipation Symbol VCEO VCBO vebo 2N3506 40 60 , = 5 0 v d c ) (ic » 0.5 Ade. vce V(BR)CEO 2N3506 2N3507 V(BR)CBO 2N3506 2N3507 V(BR)EBO 40 50 60 00 >CEX 2N3506 tiAdc 1.0 1500 1.0 1500 hFE 2N3506 50 40 30 25 25 35 30 25 20 , !1) (IC -t.S A d c , Vc ^ e Symbol ICEX 2N3506 2N3507 »FE 2N3506 2N3507 Mm - Max 10 1.0 200 150


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PDF 2N3506. 2N3507. 2N3506 2N3507 2N3506 2N3507 2N350
2N3506

Abstract: 2N3506A 2N3506AL 2N3506L 2N3507 2N3507A 2N3507AL 2N3507L
Text: , SWITCHING TYPES 2N3506 , 2N3506A , 2N3506L , 2N3506AL , 2N3507, 2N3507L, 2N3507A, 2N3507AL, JAN, JANTX, JANTXV , Low-temperature operation Forward-current transfer ratio 2N3506 , 2N3506L 2N3507, 2N3507L 2N3506A , 2N3506AL , , NPN, SILICON, SWITCHING TYPES 2N3506 , 2N3506A , 2N3506L , 2N3506AL , 2N3507, 2N3507L, 2N3507A, 2N3507AL , ) PT (3) TA = +25°C VCBO VCEO VEBO TC = +25°C 2N3506 2N3506A 2N3507 2N3507A 2N3506 2N3506A IC TJ and TSTG RJA °C -65 to +200 °C/W 2N3507 2N3507A W W


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PDF MIL-PRF-19500/349E MIL-PRF-19500/349D 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3507, 2N3507L, 2N3507A, 2N3507AL, 2N3506 2N3506A 2N3506AL 2N3506L 2N3507 2N3507A 2N3507AL 2N3507L
2010 - 2N3506

Abstract: No abstract text available
Text: 2N3506 Chip: 5.0V; geometry 1506; polarity NPN 12.34 Transistors Trans. http://store.americanmicrosemiconductor.com/ 2n3506.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N3506 2N3506 C hip: 5 .0 V; geo m et ry 1 5 0 6 ; po larit y NPN Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2 , Shipping FAQs Manufacturer Partnumber: List Price: Our Price: You Save: Americanmicrosemi 2N3506 $


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PDF 2N3506 com/2n3506 2N3506
2N3506

Abstract: 2N3507 2N3506JTX 2N3506 MOTOROLA 2N3507JTX 2NW06 15-ADO
Text: MOTOROU Orderthis dooument bv2N850WWD SEMICONDUCTOR TECHNICAL DATA 2N3506JTX , JTXV , = 5.0 Vdc) (1c. 0.5Adc,VCE = 1.0 VdC,TA. +"C) hFE 2N3506 (Ic = 500 mAdc,VCE.1.0 V*) (1C= 1.5Adc , 200 150 Min Max lc~ ~EB = 4.$~W{kCE = 40 V*) WEB =,~tdi~g$VCE = 60 V*) 2N3506 2N3507 DC Cu~~ln(l) Mdc - hFE (l&&%#A*, VCE= 2.0 Vdc) ,:. ;~ , ~,., `i> 2N3506 2N3507 , Unit *do q MOTORO~ 2N3506 and 2NW07 SERIES PACWGE DIMENSIONS R i f0,36(0.014


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PDF bv2N850WWD 2N3506JTX, 2N3507JTX, TM05AD 2NW06 2NW07 300Vdc) 2N3506 1PHW41011-2 2NS50MWD 2N3506 2N3507 2N3506JTX 2N3506 MOTOROLA 2N3507JTX 15-ADO
1999 - 1506

Abstract: 2N3507 2C3506 2N3506 2N3506L 2N3507L 22KA chip type geometry
Text: Data Sheet No. 2C3506 Generic Packaged Parts: Chip Type 2C3506 Geometry 1506 Polarity NPN 2N3506 , 2N3507 Chip type 2C3506 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for high current, high speed saturated switching and core driver applications. 2N3506 , 2N3506L , 2N3507, 2N3507L Features: High current and high speed capability Mechanical Specifications Metallization Bonding Pad Size Top Backside


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PDF 2C3506 2N3506, 2N3507 2C3506 2N3506L, 2N3507, 2N3507L 1506 2N3507 2N3506 2N3506L 2N3507L 22KA chip type geometry
2002 - 2N3506

Abstract: 2N3506J 2N3506JS 2N3506JV 2N3506JX
Text: 2N3506 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: · General purpose switching transistor · Low power · NPN silicon transistor · Screening and processing per MIL-PRF-19500 Appendix E · JAN level ( 2N3506J ) · JANTX level ( 2N3506JX ) · JANTXV level ( 2N3506JV ) · JANS level ( 2N3506JS ) · QCI to the applicable level · 100% die visual inspection , Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N3506


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PDF 2N3506 MIL-PRF-19500 2N3506J) 2N3506JX) 2N3506JV) 2N3506JS) MIL-STD-750 MIL-PRF-19500/349 2N3506 2N3506J 2N3506JS 2N3506JV 2N3506JX
2010 - Not Available

Abstract: No abstract text available
Text: 2N3506 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: · Screening and processing per MIL-PRF-19500 Appendix E · JAN level ( 2N3506J ) · JANTX level ( 2N3506JX ) · JANTXV level ( 2N3506JV ) · JANS level ( 2N3506JS ) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS · Radiation testing (total dose) upon request , 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N3506 Silicon NPN Transistor Data Sheet


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PDF 2N3506 MIL-PRF-19500 2N3506J) 2N3506JX) 2N3506JV) 2N3506JS) MIL-STD-750 MIL-PRF-19500/349
2010 - chip die npn transistor

Abstract: No abstract text available
Text: 2N3506 Silicon NPN Transistor Data Sheet Description SEMICOA Corporation offers: · Screening and processing per MIL-PRF-19500 · JAN level ( 2N3506J ) · JANTX level ( 2N3506JX ) · JANTXV level ( 2N3506JV ) · JANS level ( 2N3506JS ) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS · Radiation testing (total dose) upon request Applications · General , 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N3506 Silicon NPN Transistor Data Sheet


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PDF 2N3506 MIL-PRF-19500 2N3506J) 2N3506JX) 2N3506JV) 2N3506JS) MIL-STD-750 MIL-PRF-19500/349 chip die npn transistor
2011 - Not Available

Abstract: No abstract text available
Text: applications. (leaded) 2N3506 – 2N3507A U4 package (surface mount) 2N3506U4 – 2N3507AU4 MAXIMUM RATINGS Parameters / Test Conditions Symbol 2N3506L 2N3507L Unit Collector-Emitter Voltage , 2N3506L thru 2N3507AL Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON , family of 2N3506L through 2N3507AL high-frequency, epitaxial planar transistors feature low saturation , our website http://www.microsemi.com. FEATURES • JEDEC registered 2N3506 through 2N3507


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PDF 2N3506L 2N3507AL MIL-PRF-19500/349 2N3507AL 2N3506 2N3507 T4-LDS-0016-1,
2011 - Not Available

Abstract: No abstract text available
Text: 2N3506L 2N3507L 2N3506L 2N3507L 2N3506AL 2N3507AL h FE h FE h FE h FE h FE h FE V CE(sat) V CE(sat) V CE , 2N3506L thru 2N3507AL NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506L through 2N3507AL high-frequency, epitaxial planar transistors feature low , ://www.microsemi.com. FEATURES · · · · · JEDEC registered 2N3506 through 2N3507 series. RoHS compliant versions , available in: TO-39 (TO-205-AD) package (leaded) 2N3506 ­ 2N3507A APPLICATIONS / BENEFITS · · General


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PDF 2N3506L 2N3507AL MIL-PRF-19500/349 2N3506 2N3507 T4-LDS-0016-1,
Not Available

Abstract: No abstract text available
Text: p semcofl ¿888888888 |M iwi B f i HBf m sssBP .f rHHHHHHHH h. M itittnnnnn h hhhhhk. > >itH 2N3506 Type 2N3506 G eom etry 1506 P olarity NPN Q ual Level: JAN - JA N TXV REF: M IL-P R F -19 5 0 0 /3 4 9 Features: • General-purpose silicon transistor for switching and amplifier appli­ cations. • Housed in TO-39 case. • Also


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PDF 2N3506 MIL-PRF-19500/349 100kHz<
2010 - Not Available

Abstract: No abstract text available
Text: 2N3506 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level ( 2N3506J ) • JANTX level ( 2N3506JX ) • JANTXV level ( 2N3506JV ) • JANS level ( 2N3506JS ) • QCI to the applicable level • 100% die visual , of 2 2N3506 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics


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PDF 2N3506 MIL-PRF-19500 2N3506J) 2N3506JX) 2N3506JV) 2N3506JS) MIL-STD-750 MIL-PRF-19500/349
2N3506

Abstract: No abstract text available
Text: MOTOROLA SC -CDIODES/OPTO} ~ 3M DE | f c , 3 b ? 2 S S 0 0 3 ? 'ifl5 1 |~~ 6 3 6 7 2 5 5 MOTOROLA SC < DIODES/OPTO) 34C 37985 D SILICON SM ALL-SIGNAL TRANSISTOR DICE (continued) T - 3 5" D IE NO. - NPN LINE SO U R C E - DSL22 2C3506 Si T h is die provides perform ance similar to that of the following device types: 2N3506 2N3507 D esig ned for core driver applications. METALLIZATION - Top


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PDF DSL22 2C3506 2N3506 2N3507
2002 - 2N3506

Abstract: No abstract text available
Text: 2N3506 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021) dia. IC = 3.0A 5.08 (0.200) typ. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications


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PDF 2N3506 O205AD) 120VCEO* 1-Aug-02 2N3506
2002 - Not Available

Abstract: No abstract text available
Text: 2N3506 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 40V 5.08 (0.200) typ. IC = 3.0A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS


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PDF 2N3506 O205AD) 17-Jul-02
2011 - 2N3507U4

Abstract: No abstract text available
Text: 2N3506AU4 2N3507AU4 (3) Symbol 2N3506U4 2N3507U4 2N3506U4 2N3507U4 2N3506U4 2N3507U4 V (BR)CEO Min , 2N3506U4 thru 2N3507AU4 NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 , and JANTXV U4 Package Also available in: TO-39 package (leaded) 2N3506 ­ 2N3507A Important , registered 2N3506U4 through 2N3507U4 series. RoHS compliant versions available (commercial grade only). Vce , ns max @ I C = 1.5 A, I B1 = I B2 = 150 mA TO-5 package (leaded) 2N3506L ­ 2N3507AL


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PDF 2N3506U4 2N3507AU4 MIL-PRF-19500/349 2N3507AU4 LDS-0016-2, 2N3507U4
Not Available

Abstract: No abstract text available
Text: 2N3506+JANTX Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.200 @I(C) (A) (Test Condition)1.5 @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq60M @I(C) (A) (Test Condition) @V(CE) (V


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PDF 2N3506 Freq60M time30n
2n6190

Abstract: No abstract text available
Text: A POW ERHOUSE BIPOLAR NPN PLANAR POWER T R A N S IS T O R S DEVICE TYPE PEAK *C AMPS VCE (sat) max VOLTS _ o < O > > LU PACKAGE bvceo hFE min/max VOLTS !C @ *B A A T0-205 (1*0-5) 2N3439* 2N3440* 350 250 40 50 60 80 80 100 100 100 120 1.0 1.0 3.0 3.0 3.0 5.0 5.0 5.0 5.0 1.0 1.0 40-160 40-160 40-200 30-150 20-60 30-120 60-240 30-120 60-240 40-150 40-150 .02/ 10.0 .02/ 10.0 1 .5/2.0 1.5/ 2.0 0.5 0.5 1.0 1.0 .05 /. 004 .0 5 /.004 1.5/. 150 1.5/. 150 1 I 1 1 2N3506


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PDF T0-205 2N3439* 2N3440* 2N3506* 2N3507* 2N3418* 2N5336 2N5337 2N5338 2N5339 2n6190
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