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2N3417 Central Semiconductor Corp Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
2N3417 LEAD FREE Central Semiconductor Corp TRANS NPN 50V TO-92
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2N3417 Central Semiconductor Corp Avnet - $0.31 $0.29
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2N3417 National Semiconductor Corporation Bristol Electronics 1,370 $0.23 $0.07
2N3417 Vishay Sprague Bristol Electronics 13,050 $0.23 $0.03
2N3417 . Bristol Electronics 400 $0.23 $0.11
2N3417 APM Central Semiconductor Corp Future Electronics - $0.31 $0.31
2N3417 APM Central Semiconductor Corp Avnet - $0.31 $0.29
2N3417 D26Z National Semiconductor Corporation Bristol Electronics 24,000 $0.23 $0.03
2N3417 PBFREE Central Semiconductor Corp Chip1Stop 17,235 $0.75 $0.54
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2N3417TA Vishay Sprague Bristol Electronics 4,000 $0.23 $0.04
2N3417X Rochester Electronics - - -
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2N3417 datasheet (48)

Part Manufacturer Description Type PDF
2N3417 Central Semiconductor NPN Silicon Transistor Original PDF
2N3417 Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
2N3417 Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
2N3417 Allegro MicroSystems General Purpose Bipolar Transistor, NPN, 50 MinV, TO-92, 3-Pin Scan PDF
2N3417 Central Semiconductor NPN EPOXY - SWITCHING AND GENERAL PURPOSE Scan PDF
2N3417 Central Semiconductor Leaded Small Signal Transistor General Purpose Scan PDF
2N3417 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
2N3417 Continental Device India TO-92 Plastic Transistors Scan PDF
2N3417 Crimson Semiconductor Transistor Selection Guide Scan PDF
2N3417 General Electric Semiconductor Data Book 1971 Scan PDF
2N3417 General Electric Semiconductor Data Handbook 1977 Scan PDF
2N3417 General Electric Silicon transistor. 50V, 500mA. Scan PDF
2N3417 Micro Electronics NPN SILICON TRANSISTOR Scan PDF
2N3417 Micro Electronics Semiconductor Device Data Book Scan PDF
2N3417 Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N3417 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N3417 Others Semiconductor Master Cross Reference Guide Scan PDF
2N3417 Others Shortform Transistor Datasheet Guide Scan PDF
2N3417 Others Vintage Transistor Datasheets Scan PDF
2N3417 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF

2N3417 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - 2N3417

Abstract: No abstract text available
Text: 2N3417 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. = 2N3417 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N3417 at our online store! 2N3417 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N3417 Information Did you Know , a Quote Test Houses 2N3417 Specifications Military/High-Rel : N V(BR)CEO (V) : 50 V(BR)CBO (V


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PDF 2N3417 2N3417 STV3208 LM3909N
1997 - transistor 2n3416 datasheet

Abstract: 2N3417 2N3416 transistor 2N3416 PN100A
Text: 2N3416 2N3417 E TO-92 CB NPN General Purpose Amplifier This device is designed for , Units 2N3416 / 2N3417 625 5.0 83.3 mW mW/°C °C/W 200 °C/W 2N3416 / 2N3417 , Voltage VCE = 4.5 V, I C = 2.0 mA 2N3416 2N3417 IC = 50 mA, IB = 3.0 mA VBE(sat) Base-Emitter , 2N3417 75 180 75 180 225 540 0.3 V 1.3 V SMALL SIGNAL CHARACTERISTICS hfe Small-Signal Current Gain *Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0% 2N3416 / 2N3417 NPN


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PDF 2N3416 2N3417 PN100A 2N3416 transistor 2n3416 datasheet 2N3417 transistor 2N3416
1997 - 2N3417

Abstract: 2N3416 transistor 2n3416 datasheet PN100A
Text: 2N3416 2N3417 B C TO-92 E NPN General Purpose Amplifier This device is designed for , Corporation Max Units 2N3416 / 2N3417 625 5.0 83.3 mW mW/°C °C/W 200 °C/W 3416-3417, Rev B 2N3416 / 2N3417 Discrete POWER & Signal Technologies (continued) Electrical , Saturation Voltage VCE = 4.5 V, IC = 2.0 mA 2N3416 2N3417 IC = 50 mA, IB = 3.0 mA VBE(sat , 2N3416 2N3417 75 180 75 180 225 540 0.3 V 1.3 V SMALL SIGNAL CHARACTERISTICS


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PDF 2N3416 2N3417 PN100A 2N3416 2N3417 transistor 2n3416 datasheet
2N3416

Abstract: 2N3417 PN100A
Text: SWiWCt-HLJP SEMÎCONC LJO'F OR Discrete POWER & Signal Technologies 2N3416 2N3417 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches , 2N3416 / 2N3417 Pd Total Device Dissipation 625 mW Derate above 25°C 5.0 mW/°C Rejc Thermal , CHARACTERISTICS* h FE DC Current Gain Vce = 4.5 V, lc = 2.0 mA 2N3416 2N3417 75 180 225 540 VcE(sat , 2.0 mA, Vce = 4.5 V, f= 1.0 kHz 2N3416 2N3417 75 180 *PulseTest: Pulse Width <300 us, Duty Cycle


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PDF 2N3416 2N3417 PN100A 2N3417
Not Available

Abstract: No abstract text available
Text: S E M IG a N C L J C T Q R 2N3416 2N3417 NPN General Purpose Amplifier This device is , °C unless otherwise noted C h aracteristic M ax Units 2N3416 / 2N3417 Rejc Total Device , Semiconductor Corporation 3416-3417, Rev B 2N3416 / 2N3417 D iscrete POWER & S ig n a l Technologies , FE DC Current Gain VC = 4.5 V, lc = 2.0 mA E 2N3416 2N3417 VcE(sat) Collector-Emitter , , VC = 4.5 V, E 1.0 kHz 2N3416 2N3417 *P ulse Test: Pulse Width < 300 [is, Duty Cycle < 2.0


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PDF 2N3416 2N3417 PN100A 2N3416
2N3415

Abstract: transistor 2n3416 2n3415 transistor 3414 TRANSISTOR MPS3417 MPS3416 2N3417 2N3416 2N3414 MPS3415
Text: Datasheet 2N3414 MPS3414 2N3415 MPS3415 CfillfM 1 2N3416 MP53416 CanaliiAHili ii4AM PMan 2N3417 MPS3417 semiconaunor corp. 145 Adams Avenue, Hauppauge, NY 11788 USA NPN SILICON TRANSISTOR Tel: (631) 435-1110 • Fax: (631) 435-1824 JEDEC T0- 92 CASE" Manufacturers of World Class Discrete , (Ta=25°C unless otherwise noted) 2N3414 2N3415 2N3416 2N3417 SYMBOL MPS3414 MPS3415 MPS3416 , ) 75 225 hFE Vce=4.5V, lc=2.0mA (3415, 3417) 180 540 *2N34l4 thru 2N3417 : ECB LEAD CODE


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PDF 2N3414 MPS3414 2N3415 MPS3415 2N3416 MP53416 2N3417 MPS3417 2N3414, MPS3414 transistor 2n3416 2n3415 transistor 3414 TRANSISTOR MPS3417 MPS3416 MPS3415
2N3417

Abstract: 2N3416 PN100A
Text: IO FAÎRCHILD SEMICONDUCTOR ™ 2N3416 2N3417 Discrete POWER & Signal Technologies CO O IO CO CB TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose , Units 2N3416/ 2N3417 Pd Total Device Dissipation Derate above 25°C 625 5.0 mW mW/°C Rejc Thermal , , lc =0 100 nA ON CHARACTERISTICS* h fe DC Current Gain Vce = 4.5 V, lc = 2.0 mA 2N3416 2N3417 , hfe Small-Signal Current Gain lc = 2.0 mA, Vce = 4.5 V, f= 1.0 kHz 2N3416 2N3417 75 180 *PulseTest


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PDF 2N3416 2N3417 PN100A 2N3417
transistor 2N3416

Abstract: 2N3416 2N3417 st 833
Text: ST 2N3416 / 2N3417 NPN Silicon Epitaxial Planar Transistor General Purpose Amplifier For use as general purpose amplifiers and switches requiring collector current to 300 mA. TO-92 Plastic Package , Code: 724) Dated : 25/07/2003 ST 2N3416 / 2N3417 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit ST 2N3416 hFE 75 - 225 - ST 2N3417 hFE 180 - 540 - ST 2N3416 hfe 75 - - - ST 2N3417 hfe 180 - - - at VCB


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PDF 2N3416 2N3417 width300 transistor 2N3416 2N3417 st 833
1997 - 2N3417

Abstract: 2N3416 transistor 2n3416 datasheet CBVK741B019 F63TNR PN100A PN2222N 2n3416 transistor
Text: 2N3416 / 2N3417 2N3416 2N3417 B C TO-92 E NPN General Purpose Amplifier This , Corporation Max Units 2N3416 / 2N3417 625 5.0 83.3 mW mW/°C °C/W 200 °C/W 3416-3417 , 2N3416 2N3417 IC = 50 mA, IB = 3.0 mA VBE(sat) Base-Emitter Saturation Voltage IC = 50 mA, IB = 3.0 mA 0.6 IC = 2.0 mA, VCE = 4.5 V, f = 1.0 kHz 2N3416 2N3417 75 180 75 180 , *Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0% 2N3416 / 2N3417 NPN General Purpose Amplifier


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PDF 2N3416 2N3417 2N3416 PN100A 2N3417 transistor 2n3416 datasheet CBVK741B019 F63TNR PN2222N 2n3416 transistor
2N3417 equivalent

Abstract: 2N3417 st 833 2N3416 transistor 2n3416
Text: ST 2N3416 / 2N3417 NPN Silicon Epitaxial Planar Transistor General Purpose Amplifier For use as general purpose amplifiers and switches requiring collector current to 300 mA. TO-92 Plastic Package , /07/2003 ST 2N3416 / 2N3417 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit ST 2N3416 hFE 75 - 225 - ST 2N3417 hFE 180 - 540 - ST 2N3416 hfe 75 - - - ST 2N3417 hfe 180 - - - at VCB=25V ICBO - -


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PDF 2N3416 2N3417 width300s, 2N3417 equivalent 2N3417 st 833 transistor 2n3416
2N3417

Abstract: 2N3416 st 833 transistor 2n3416 2n3416 transistor
Text: ST 2N3416 / 2N3417 NPN Silicon Epitaxial Planar Transistor General Purpose Amplifier For use as general purpose amplifiers and switches requiring collector current to 300 mA. TO-92 Plastic Package , , Stock Code: 724) R Dated : 25/07/2003 ST 2N3416 / 2N3417 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit ST 2N3416 hFE 75 - 225 - ST 2N3417 hFE 180 - 540 - ST 2N3416 hfe 75 - - - ST 2N3417 hfe 180 - - -


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PDF 2N3416 2N3417 width300 2N3417 st 833 transistor 2n3416 2n3416 transistor
2012 - 2N3415

Abstract: 2N3414 transistor 2n3415 transistor 2n3414 MPS-3417 2n3417 transistor 2N3416 2N3416 NPN Silicon Epitaxial Planar Transistor to92 3414 TRANSISTOR
Text: 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 w w w. c e n t r a l s e m i . c o m NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3414, MPS3414 series types , 25 25 5.0 500 625 1.5 -65 to +150 2N3416 2N3417 MPS3416 MPS3417 50 50 MAXIMUM RATINGS: (TA , 0.3 0.85 225 540 V V R2 (25-October 2012) 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 NPN SILICON TRANSISTOR TO-92 CASE - MECHANICAL OUTLINE 2N3414 THRU 2N3417 LEAD


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PDF 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 2N3414, transistor 2n3415 transistor 2n3414 MPS-3417 2n3417 transistor 2N3416 NPN Silicon Epitaxial Planar Transistor to92 3414 TRANSISTOR
2013 - 2n3414

Abstract: 2N3416
Text: 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3414, MPS3414 , 2N3414 2N3415 MPS3414 MPS3415 25 2N3416 2N3417 MPS3416 MPS3417 50 UNITS V 25 50 V , V R3 (10-September 2013) 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 SILICON NPN TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE 2N3414 THRU 2N3417 LEAD CODE: 1) Emitter


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PDF 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 2N3414, 2n3414 2N3416
92C3-427S0

Abstract: 42766 2N3414 GE 2N3414 2n3417 output admittance hoe 2n3415 2n3414-17 X10-3 GES3416 ges3
Text: €”Typical gain-bandwidth product characteristics; and small-signal current transfer ratio characteristic for2N3416, 2N3417 , VOLTAGE (VcE) - » Fig. 11 -Typical collector characteristics lor 2N3416, 2N3417 , GES3416 and GES3417 , €¢2C3-427G7 Fig. 13—Typical collector characteristics for 2N3416, 2N3417 , GES3416, andGES3417. TERMINAL


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PDF 2N3414-17, GES3414-17 2N3414-17 GES3414-17 GES3414-17) 2N3414-17) 2N3414 2N3416 GES3414 GES3416 92C3-427S0 42766 2N3414 GE 2n3417 output admittance hoe 2n3415 X10-3 ges3
1997 - 2N3417

Abstract: No abstract text available
Text: 2N3416 / 2N3417 2N3416 2N3417 B C TO-92 E NPN General Purpose Amplifier This , Semiconductor Corporation Max Units 2N3416 / 2N3417 625 5.0 83.3 mW mW/°C °C/W 200 °C , 2.0 mA 2N3416 2N3417 IC = 50 mA, IB = 3.0 mA VBE(sat) Base-Emitter Saturation Voltage IC = 50 mA, IB = 3.0 mA 0.6 IC = 2.0 mA, VCE = 4.5 V, f = 1.0 kHz 2N3416 2N3417 75 180 75 , Gain *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 2N3416 / 2N3417 NPN General


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PDF 2N3416 2N3417 2N3416 PN100A 2N3417
Not Available

Abstract: No abstract text available
Text: 2N3416 / 2N3417 Discrete POW ER & Signal Technologies 2N3416 2N3417 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum RâtinÇjS Symbol VcEO VcBO V ebo lc T j, Tstg * T A = 25°C unless o th e rw ise noted Parameter C , 2N3416 / 2N3417 NPN General Purpose Amplifier ( c o n t in u e d ) Electrical Characteristics


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PDF 2N3416 2N3417 PN100A
Not Available

Abstract: No abstract text available
Text: IC 2N3417 NPN SILICON TRANSISTOR TO-92 2N3417 is NPN silicon planar transistor designed for general purpose power applications. AF medium ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCB0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation VCE0 VEB0 IC Tj,fstg 50V 50V 5V 500mA -55 to +150°C ELECTRICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MIN MAX UNIT TEST CONDITIONS Collector-Base Breakdown


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PDF 2N3417 2N3417 500mA
2N3417 equivalent

Abstract: 2N2221-2N2222 2N2222A npn transistor transistor 2n5174 IC TC 3588 beta transistor 2N2222 2N4424 equivalent 2N4424 2N3416 equivalent 1N4532
Text: 2N5311 2N3416 2N3417 2N3416 21*3417 60 2N3S5BA 7N3859A 70 2N3960A 2N3858A 2N3859A 2N3860A D29E8 03307 , amplifiers and medium speed switches. 1 40.69 2N3416 75-225 50 2N3417 180-540 2N4424 180-540 40 0.3 360 5.0 150 40 volt version of 2N3417 1 40.19 2N4425 180-540 560' 40 volt version of , linear amplifiers or medium-speed switching circuits. 35.87 2N3416 M32P-X506 35.85 2N3417


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PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N3417 equivalent 2N2221-2N2222 2N2222A npn transistor transistor 2n5174 IC TC 3588 beta transistor 2N2222 2N4424 equivalent 2N4424 2N3416 equivalent 1N4532
Not Available

Abstract: No abstract text available
Text: 2N3417 SILICON NPN TRANSISTOR DESCRIPTION: The 2N3417 is a Small Signal Transistor for General Purpose Low Level Amplifier and Switching Applications. PACKAGE STYLE TO- 92/TO- 98 MAXIMUM RATINGS Ic VcB Pd i s s Tj Ts t g Ôj c 5OO mA so V 36O mW @ Ta " 25 0C -55 0C to &15O 0C -55 0C to &15O 0C 35O 0C/W 1 = Emitter 2 = Collector 3 = Base CHARACTERISTICS SYMBOL BVc e o BVc b o Ic b o Ie b o hFE Vc E(SAT) Vb E(SAT) hf e lc= 1.O mA T e = 25 ° c t e s t c o n d it io n s


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PDF 2N3417 92/TO-
2N3403

Abstract: 2N3856 2N4256 2N4425 2N4424 2N3405 2N2926 029e1 GET3013 2n3960a
Text: 2N5311 2N3416 2N3417 2N3416 21*3417 60 2N3S5BA 7N3859A 70 2N3960A 2N3858A 2N3859A 2N3860A D29E8 03307 , amplifiers and medium speed switches. 1 40.69 2N3416 75-225 50 2N3417 180-540 2N4424 180-540 40 0.3 360 5.0 150 40 volt version of 2N3417 1 40.19 2N4425 180-540 560' 40 volt version of


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PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N3403 2N3856 2N4256 2N4425 2N4424 2N3405 2N2926 029e1 2n3960a
Not Available

Abstract: No abstract text available
Text: m 2N3417 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3417 is a Small Signal Transistor for General Purpose Low Level Amplifier and Switching Applications. PACKAGE STYLE T O -92 /T O -98 _ .205 |5 201 .1 7 5 (4 451 OIA. i MAXIMUM RATINGS .210 |5 33) 170 (4 32) 500 mA lc V cb 50 V P diss 360 mW @ Ta = 25 °C SEATING PLANE Tj -55 °C t o +150 °C 0JC — 3 LEAOS .016 * .020 TYP. (0.406x0.508) .5 2 5(1 3 .3 9) -55 °C t o +150 °C


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PDF 2N3417 2N3417 406x0
2N3403

Abstract: 2N3405 hs5305 2N3404 2N4425 LC-500 2N4256 2N3402 2N5305 2N5175
Text: and medium speed switches. 1 40.69 2N3416 75-225 50 2N3417 180-540 2N4424 180-540 40 0.3 360 5.0 150 40 volt version of 2N3417 1 40.19 2N4425 180-540 560' 40 volt version of 2N3405


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PDF 2N3402 2N3403 2N3405 2N3414 2N3415 2N3416 2N3417 2N4424 D16P1 2N5305 hs5305 2N3404 2N4425 LC-500 2N4256 2N5175
"to-98" package

Abstract: 2N3415 2n3416 2n3417
Text: characteristic for 2N3416, 2N3417 , GES3416 and GES3417. Flg. 10 , '/^ 2N3414-17, GES3414-17 Fig. 11-Typical collector characteristics lor 2N3416 , 2N3417 , 3 -4 2 7 G 7 Fig. 13-Typicalcoliectorcharacteristicsfor2N3416, 2N3417 , GES3416, andGES3417


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PDF 2N3414-17, GES3414-17 2N3414-17and GES3414-17 GES3414-17) 2N3414-17) 2N3414 2N3416 "to-98" package 2N3415 2n3416 2n3417
2N3417

Abstract: transistor BO 540 NPN transistor ECB TO-92
Text: ÉHHHH| I 2N3417 NPN SILICON TRANSISTOR 2N3417 is NPN silicon planar transistor designed for general purpose AF medium power applications. TO-92 ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation VCBO VCEO VE BO IC Tj,fstg 50V 50V 5V 500mA -55 to +150°C ELECTRICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MIN MAX UNIT TEST CONDITIONS Collector-Base Breakdown Voltage BVCB0 50 V ICslOOfiA IE=0 Collector-Emitter


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PDF 2N3417 2N3417 500mA transistor BO 540 NPN transistor ECB TO-92
A2 zener diode

Abstract: diode ZENER A1 to-226aa to226aa ZENER DIODE 1n5240 ZENER 1N5242 DIODE 827 2n2222 transistor pin b c e ZENER 1n5232 1N414* zener
Text: PNP TPQ6502 TMPT2907A TP2907A TPQ2907A 2N3416 2N3417 2N3904 TMPT3904 TPQ3904 2N3906 PNP 2N3906 , C B C Quad Transistor Array C C B B 2N3416 2N3417 2N3904 NPN NPN NPN B C E C Quad


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PDF 1N914 1N4148 1N5230 1N5231 1N5232 1N5234 1N5236 1N5237 1N5239 1N5240 A2 zener diode diode ZENER A1 to-226aa to226aa ZENER DIODE 1n5240 ZENER 1N5242 DIODE 827 2n2222 transistor pin b c e ZENER 1n5232 1N414* zener
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