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2N3251AUB Microsemi Corporation Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3
2N3251A Microsemi Corporation Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN
JAN2N3251AUB Microsemi Corporation Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3
JANTXV2N3251AUB Microsemi Corporation Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3
JAN2N3251A Microsemi Corporation Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN
JANTX2N3251A Microsemi Corporation Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-18, 3 PIN
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2N3251 New Jersey Semiconductor Products, Inc. Bristol Electronics 95,042 - -
2N3251 Central Semiconductor Corp Avnet - $2.09 $1.79
2N3251 Texas Instruments Bristol Electronics 56 $1.50 $0.56
2N3251 Central Semiconductor Corp Future Electronics - $2.07 $2.07
2N3251 National Semiconductor Corporation Bristol Electronics 6 $1.50 $1.50
2N3251 Motorola Semiconductor Products Bristol Electronics 318 $1.50 $0.48
2N3251 Fairchild Semiconductor Corporation Bristol Electronics 16 $1.50 $0.97
2N3251 Raytheon Bristol Electronics 86 $1.50 $0.56
2N3251 Motorola Semiconductor Products New Advantage Corporation 41 - -
2N3251A New Jersey Semiconductor Products, Inc. Bristol Electronics 10,419 - -
2N3251A SPC Multicomp Farnell element14 266 £2.33 £0.67
2N3251A Motorola Semiconductor Products Bristol Electronics 128 $1.88 $0.70
2N3251A . Bristol Electronics 77 $1.88 $0.70
2N3251A SPC Multicomp Newark element14 961 $1.10 $0.40
2N3251A SPC Multicomp element14 Asia-Pacific 261 $1.01 $0.51
J2N3251A Motorola Semiconductor Products Bristol Electronics 6 - -
JANTX2N3251A ACTIVE COMPNTS/DIODES Bisco Industries 2 - -
JANTXV2N3251A Motorola Semiconductor Products Bristol Electronics 25 $10.08 $5.04
WTB2S-2N3251 SICK AG Allied Electronics & Automation - $166.46 $158.14

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2N3251 datasheet (77)

Part Manufacturer Description Type PDF
2N3251 Central Semiconductor PNP SILICON TRANSISTOR Original PDF
2N3251 Microsemi Pnp Bipolar Transistor Original PDF
2N3251 Semelab Bipolar PNP Device in a Hermetically Sealed TO18 Metal Package - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.2 / Hfe=100min / fT(Hz)=300M / Pwr(W)=0.36 Original PDF
2N3251 Boca Semiconductor GENERAL PURPOSE TRANSISTOR (PNP SILICON) - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.2 / Hfe=100min / fT(Hz)=300M / Pwr(W)=0.36 Scan PDF
2N3251 Central Semiconductor BJT, PNP, Small Signal Transistor, IC 0.2A - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.2 / Hfe=100min / fT(Hz)=300M / Pwr(W)=0.36 Scan PDF
2N3251 Central Semiconductor PNP Metal Can Transistors - Saturated Switch / Low Level Amplifier Scan PDF
2N3251 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
2N3251 Crimson Semiconductor Transistor Selection Guide Scan PDF
2N3251 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
2N3251 General Diode Transistor Selection Guide Scan PDF
2N3251 Micro Electronics Semiconductor Devices Scan PDF
2N3251 Motorola Motorola Semiconductor Datasheet Library Scan PDF
2N3251 Motorola European Master Selection Guide 1986 Scan PDF
2N3251 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N3251 Others Semiconductor Master Cross Reference Guide Scan PDF
2N3251 Others Shortform Electronic Component Datasheets Scan PDF
2N3251 Others Shortform Transistor Datasheet Guide Scan PDF
2N3251 Others Vintage Transistor Datasheets Scan PDF
2N3251 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N3251 Others Transistor Shortform Datasheet & Cross References Scan PDF

2N3251 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N3251

Abstract: transistor 2N3251 2N3250 2N3250A 2N3251A
Text: Datasheet 2N3250 ^^ ^ m ™ 2N3250A fflhfiii 1 2N3251 wenirui CAIMIiiAnfllltf^ikB 2N3251A , 2N3250 2N3250A 2N3251 2N3251A SYMBOL UNITS Collector-Base Voltage Vcbo 50 60 V , ( 2N3251 , 2N3251 A) 80 hFE VCE=1.0V, lc=1.0mA (2N3250, 2N3250A) 45 ( 2N3251 , 2N3251A ) 90 , hpE Vce=10V, lC=10mA (2N3250, 2N3250A) ( 2N3251 , 2N3251A ) hFE Vce=10V, lc=50mA (2N3250, 2N3250A) ( 2N3251 , 2N3251 A) fj VCe=20V, lC=1 OmA, f=100MHz(2N3250, 2N3250A) ( 2N3251 , 2N3251A ) Cobo Vcb=10V, f


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PDF 2N3250 2N3250A 2N3251 2N3251A 2N3250 2N3251 transistor 2N3251 2N3250A 2N3251A
2N3251

Abstract: 2N3250 equivalent 2N3250 2N3251A 2n3250 bsc TB175 2N3250A JAN2N3251A 2N3250A MOTOROLA
Text: 1.0 mhz) Cibo — 8.0 pF 2N3250 2N3251.A ELECTRICAL CHARACTERISTICS (continued) (Ta - 25°C unless , ) 2N3250, 2N3251 2N3251A V(BR)CEO -40 -60 - Vdc Collector-Base Breakdown Voltage 2N3251 2N3251A v(BR)CBO -50 -60 — Vdc Emitter-Base Breakdown Voltage l£ = -10 MAdc) V(BR)EBO -5.0 â , Ratio dC = -0.1 mAdc, VCE = -10 Vdc) 2N3250 2N3251 , 2N3251A hFE 40 80 - flC = -1.0 mAdc, VCE = -1.0 Vdc) 2N3250 2N3251 , 2N3251A 45 90 _ ÜC = -10 mAdc, Vce = —1.0 Vdc)(1) 2N3250 2N3251 , 2N3251A 50


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PDF 2N3250 2IM3251 2N3251A 2N3251 O-206AA) 2N3250 equivalent 2n3250 bsc TB175 2N3250A JAN2N3251A 2N3250A MOTOROLA
2n3251

Abstract: No abstract text available
Text: UNIT 2N3251A >60 V 0.6 *Pulse Test: Pulse Width < 300µs, Duty Cycle < 2% µ 2N3250_A_ 2N3251 , SILICON PLANAR SWITCHING TRANSISTORS 2N3250, A/ 2N3251 ,A TO-18 Metal Can Package Designed for Small Signal, General Purpose and Switching Applications ABSOLUTE MAXIMUM RATINGS 2N3250A 2N3251A 60 60 Collector Emitter Voltage VCEO 2N3250 2N3251 40 Collector Base Voltage VCBO 50 , Emitter Voltage *VCEO IC=10mA, IB=0 2N3250 2N3251 >40 Collector Base Voltage VCBO


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PDF 2N3250, 2N3251 2N3250A 2N3251A 2N3250 2N3251 C-120 2N3250 311003D
2N3251A

Abstract: 2N3251 2N3250 2N3250A
Text: PLANAR SWITCHING TRANSISTORS 2N3250, A/ 2N3251 ,A TO-18 Metal Can Package Designed for Small Signal, General Purpose and Switching Applications ABSOLUTE MAXIMUM RATINGS 2N3250A 2N3251A 60 60 Collector Emitter Voltage VCEO 2N3250 2N3251 40 Collector Base Voltage VCBO 50 Emitter , *VCEO IC=10mA, IB=0 2N3250 2N3251 >40 Collector Base Voltage VCBO IC=10µA, IE=0 >50 , 0.9 V 1.2 V IC=10mA, IB=1mA IC=50mA, IB=5mA MIN 2N3250A UNIT 2N3251A >60 V


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PDF ISO/TS16949 2N3250, 2N3251 2N3250A 2N3251A 2N3250 2N3251 C-120 2N3250 2N3251A 2N3250A
2004 - 2N3251

Abstract: No abstract text available
Text: 2N3251 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. = 2N3251 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N3251 at our online store! 2N3251 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N3251 Information Did you Know , for Parts Request a Quote Test Houses 2N3251 Specifications Military/High-Rel : N V(BR)CEO (V


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PDF 2N3251 2N3251 STV3208 LM3909N LM3909
2n3251a

Abstract: No abstract text available
Text: 2N3250 2N3251 2N3250A 2N3251A SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c , , 2N3251 ) 50 IC=10μA (2N3250A, 2N3251A ) 60 IC=10mA (2N3250, 2N3251 ) 40 IC=10mA (2N3250A, 2N3251A , V V V V V V V V V 2N3251 2N3251A MIN MAX 80 90 100 300 30 - R1 (4-March 2014) 2N3250 2N3251 2N3250A 2N3251A SILICON PNP TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) 2N3250 2N3251 2N3250A 2N3251A SYMBOL TEST CONDITIONS MIN MAX


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PDF 2N3250 2N3251 2N3250A 2N3251A 2N3250, 2n3251a
2N3251

Abstract: 2N3250 251A
Text: 2N3251.A E L E C T R I C A L C H A R A C T E R I S T I C S (continued) H a - 25°C u n le ss o th e rw , 2N3250 2N3251 -4 0 -5 0 - 5 .0 -2 0 0 0.36 2.06 1.2 6.9 - 6 5 to +200 2N 3 25 1A -6 0 -6 0 U n it Vdc Vdc Vdc m Adc W att mW/°C W atts m W /X X 2N3250 2N3251 ,A* C A S E 22-03, S T Y LE 1 TO-18 (TO-2 O6AA , Ratio d e = - 0.1 m A d c, V c e = - 1 0 Vdc) 2N3250, 2N3251 2 N 3 251A 2N3250, 2N3251 2 N 3 251A , V (B R)EBO >CEX *BL - - h FE 2N3250 2N3251 , 2 N 3251A 2N3250 2N3251 , 2 N 3 251A 2N3250


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PDF 2N3250 2N3251 b3b7254 L3L75S4 251A
2001 - Not Available

Abstract: No abstract text available
Text: ) DESCRIPTION SYMBOL 2N3250A 2N3251A 60 UNIT 60 V V 2N3250 2N3251 >40 2N3250A 2N3251A , Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS 2N3250, A 2N3251 , A TO-18 Metal Can , Emitter Voltage VCEO 2N3250 2N3251 40 Collector Base Voltage VCBO 50 Emitter Base , TRANSISTORS 2N3250, A 2N3251 , A TO-18 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless , 2N3251 , A MIN MAX UNIT 40 80 IC=1mA,VCE=1V 2N3250, A 2N3251 , A 45 90 IC=10mA,VCE


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PDF 2N3250, 2N3251, 2N3250 2N3251 C-120 2N3250 ARev240901
2N3250

Abstract: 2N3251A
Text: = -0 .1 mAdc, Vce = " 10 Vdc) hFE 2N3250 2N3251 , 2N3251A 2N3250 2N3261, 2N3251A 2N3250 2N3251 , 2N3251A 2N3250 2N3251 , 2N3251A v CE(sat) - - v BEIsat) -0 .6 - 2N3250 2N3251 , 2N3251A 250 300 - - -0 , , 2N3251 2N3251A 2N3250, 2N3251 2N3251A V(BR)CEO v (BR)CBO V(BR)EBO *CEX 'BL -4 0 -6 0 -5 0 -60 -5 .0 , 0 m A, Vce 10 V, f - 1.0 kHz) 2N3250 2N3251 , 2N3251A 2N3250 2N3251 , 2N3251A 2N3250 2N3251 , 2N3251A , ) 100 4.0 10 2N3250 2N3251 , 2N3251A - - Symbol td tr 2N3250 2N3251 , 2N3251A ts tf Max 35


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PDF 2N3250 2N32S1 2N3251A O-206AA) 2N32SlQ
2n3251

Abstract: No abstract text available
Text: 2N3250 2N3251 ,A* M A X IM U M RA TIN G S Symbol 2N3250 2N3251 2N3251A Unit C o , 2N 3250, 2N3251 - 1 0 m Adc) v ( B R )C E O 2N3251A C o lle c t o r -B a s e B r e a k d o w n V o lt a g e 2N3250, 2N3251 -4 0 — Vdc -6 0 -5 0 -6 0 — Vdc V (B , )C B O 2N3251 , 2N 3 25 1A IIC = 90 — 2N3251A E m it t e r - B a s e B r e a k d o , n c t io n to A m b ie n t * 2N3251A is a Motorola designated preferred device. = 25°C u n l


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PDF 2N3250 2N3251 2N3251 2N3251A L3L75S4
2N3261

Abstract: 2N3261A 2N3251A 2n3250A 2n3251
Text: 2N3250, A 2N3251 , A 2N32E0 2N3250A 2N3251 2N3251A 40 50 5.0 200 0.38 2.0B 1.2 6.9 -6B to + 200 60 60 , Forward Current Transfer Radio (1) flc - 0,1 mAdo, V c e " 1-0 Vdc) hpE 2N3250, 2N3250A 2N3251 , 2N3251A 2N3250, 2N3250A 2N3261, 2N325TA 2N3260, 2N3250A 2N 326Î, 2N3251A 2N3250, 2N3250A 2N3251 , 2N3251A V c e (a , | 2N3250, 2N3251 2N3250A, 2N3251A 2N3250, 2N32S1 2N3250A, 2N32S1A V(BR)CEO V(0R)CBO V(SRJEBO IC EX bl , Ratio Oc = 1.0 mA, V C e " 10 V, f 1.0 kHz) 2N3260, 2N3260A 2N3251 , 2N3251A 2N3260, 2N3250A 2N3251


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PDF 2N3250, 2N3251, 2N32E0 2N3250A 2N3251 2N3251A 2N3261A O-206AA) 2N3250. 2N3261
2003 - 2N3251

Abstract: 2N3250A 2N3250 2N3251A
Text: SILICON PLANAR SWITCHING TRANSISTORS 2N3250, A/ 2N3251 ,A TO-18 Metal Can Package Designed for Small Signal, General Purpose and Switching Applications ABSOLUTE MAXIMUM RATINGS 2N3250A 2N3251A 60 60 Collector Emitter Voltage VCEO 2N3250 2N3251 40 Collector Base Voltage VCBO 50 , Voltage *VCEO IC=10mA, IB=0 2N3250 2N3251 >40 Collector Base Voltage VCBO IC=10µA, IE , 0.5 V 0.9 V 1.2 V IC=10mA, IB=1mA IC=50mA, IB=5mA MIN 2N3250A UNIT 2N3251A


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PDF 2N3250, 2N3251 2N3250A 2N3251A 2N3250 2N3251 C-120 2N3250 311003D 2N3250A 2N3251A
Not Available

Abstract: No abstract text available
Text: TYPES 2N3250, 2N3250A, 2N3251. 2N3251A P-N-P SILICON TRANSISTORS B U LL E T IN N O . D L -S 6 7 9 , TYPES 2N3250, 2N3250A. 2N3251. 2N3251A P-N-P SILICON TRANSISTORS *electrical characteristics a t 25 , Low-Level hFE: 80 Min at 100 /¿A ( 2N3251 and 2N3251A ) ` m echanical d a ta ^absolute m a x im u m ra tin g s a t 25°C fre e -a ir tem p e ra tu re (unless o th e rw ise noted) 2N3250 2N3251 , /¿A, l E = 0 lc = -10 mA, lg = 0, l E = -10 /xA, lc = 0 See Note 4 2N3250 2N 32S0A 2N3251 2N3251A


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PDF 2N3250, 2N3250A, 2N3251. 2N3251A 2N3251 2N3251A) 2N3250 2N3251
Not Available

Abstract: No abstract text available
Text: SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 3 -4 8 2N3250, 2N3251.A AUDIO SMALL-SIGNAL CHARACTERISTICS , 2N3250, 2N3251.A FIGURE 13 - f j AND rfc'Cc versus lc FIGURE 14 - 30 MC EQUIVALENT CIRCUIT VCe = -10 V , Symbol v CEO VCBO vebo 2N3250 2N3251 -4 0 -5 0 2N3250 2N3251 ,A* 2N3251A -6 0 -6 0 -5 .0 -2 0 0 , o lta g e OC = - 1 0 ¿iAdc) 2 N 3 2 5 0 , 2N3251 2N 3251A 2 N 32 5 0, 2N 3251 2N 3251A V(B R , TRAN SISTO R S, FETs AND DIODES 2N3250, 2N3251 ,A ELECTRICAL CHARACTERISTICS I n p u t Im p e d a


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PDF 2N3250 2N3251 2N3251 2N3251A O-206AA) 2N3250,
"pnp switch"

Abstract: 2N3250 2N3251 MMCF3250 MMCF3250A MMCF3251 MMCF3251A
Text: MMCF3250, MMCF3251, NIMCF3250A (SILICON) MMCF3251A Flip-Chip — PNP silicon Annular transistor family for high-speed switching and amplifier applications similar to the 2N3250.A and 2N3251.A. Primary Electrical Features: • High speed switching characteristics similar to 2N3251. FLIP-CHIP PNP SWITCH AND AMPLIFIER TRANSISTORS MAXIMUM RATINGS Rating Symbol MMCF3250 MMCF3251 MMCF3250A MMCF3251A Unit Collector-Emitter Voltage VCEO 40 60 Vdc Collector-Base Voltage VCB 50 60 Vdc Emitter-Base


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PDF MMCF3250, MMCF3251, NIMCF3250A MMCF3251A 2N3250 2N3251 2N3251. MMCF3250 MMCF3251 MMCF3250A "pnp switch" MMCF3251A
MPQ6700

Abstract: 2N3904 die 2N3906 die CP192-CMPT3904-CT CP592-2N3251-CT MPQ3904 2N3904 2N3904 geometry CP192V MPQ6700 equivalent
Text: CZT3906 MMPQ3906 MMPQ6700 MPQ3906 MPQ6700 2N3251 CP592-CEN1085-CT CP592-CEN1085-WN CP592-CMPT3906-CT CP592-CMPT3906-WN CP592- 2N3251 -CT CP592-2N3906-WN Page 2 of 2 PCN #107 Notification


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PDF CP192V CP592V CP392V CP792V 2N3904 CMPT3904 CMST3904 CMUT3904 MPQ6700 2N3904 die 2N3906 die CP192-CMPT3904-CT CP592-2N3251-CT MPQ3904 2N3904 2N3904 geometry MPQ6700 equivalent
1507-50

Abstract: 2N4025 DUAL TRANSISTORS IN TO77 PACKAGE
Text: 2N2907A 2N3964 2N3962 2N3965 2N3964 2N3962 2N3965 2N3251 2N3251 2N3962 2N3962 2N3962 2N3962 45 45 60 60


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PDF 2N3726 2N3727 2N3802 2N3803 2N3804 2N3804A 2N3805 2N3805A 2N2907 1507-50 2N4025 DUAL TRANSISTORS IN TO77 PACKAGE
2N3251

Abstract: New England Semiconductor
Text:  2N3251 ^IP NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL TRANSISTOR • HIGH VOLTAGE • HIGH CURRENT GAIN • HIGH FREQUENCY MAXIMUM RATINGS RATINGS SYMBOL VALUE UNITS Collector-Emitter Voltage VcEO -40 Vdc Collector-Base Voltage VCB -50 Vdc Emitter-Base Voltage VEB -5.0 Vdc Collector Current — Continuous - Peak(l) Ic -200 mAdc Total Power Dissipation @ Tc = 25UC Derate above 25°C Pn , : - 2N3251 ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) Characteristics [ Symbol


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PDF 2N3251 2N3251 New England Semiconductor
2002 - 2n3054 pnp

Abstract: TO77 package 2N3411
Text: " 2N3251 " Semelab Home Datasheets are downloaded as Acrobat PDF files. Bipolar Products PRODUCT 2N3251 2N3251A 2N3251A-JQR-B 2N3251CSM 2N3251CSM-JQR-B 2N3251DCSM Polarity PNP PNP PNP PNP PNP PNP , Package Polarity FET: Diode: 2N3251AQF Quad Transistor Quad Ceramic Flat Pack PNP VDSS IC(cont) ID(cont


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PDF html/2N3054 2N3054" 2N3054 2N3054A 2N3054-JQR-B 2N3250" 2N3250 40MHz 2n3054 pnp TO77 package 2N3411
2002 - 2N3251

Abstract: No abstract text available
Text: 2N3251 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 2.54 (0.100) Nom. 3 1 2 TO18 (TO206AA) PINOUTS 1 ­ Emitter Parameter 2 ­ Base 3 ­


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PDF 2N3251 O206AA) 2-Aug-02 2N3251
2002 - Not Available

Abstract: No abstract text available
Text: 2N3251 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. Bipolar PNP Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 ­ Emitter 2 ­ Base 3 ­ Collector Parameter VCEO* IC(CONT


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PDF 2N3251 O206AA) 16-Jul-02
1994 - 2n3250

Abstract: 2N32 2N3251
Text: 2N3250 2N3251 AMPLIFIERS AND SWITCHES DESCRIPTION The 2N3250 and 2N3251 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case. They are suited for switching and amplifier applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC Pt o t T s t g, T j January 1989 Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb 25 °C at


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PDF 2N3250 2N3251 2N3251 2N3250-2N3251 2N32
2002 - Not Available

Abstract: No abstract text available
Text: 2N3251 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. Bipolar PNP Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 ­ Emitter 2 ­ Base 3 ­ Collector Parameter VCEO* IC(CONT


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PDF 2N3251 O206AA) 19-Jun-02
Not Available

Abstract: No abstract text available
Text: M axim um Ratings Type NPN PIMP Pd Am bient mW V cb Volts Electrical Characteristics @ 25°C V eb Volts VCE Volts H re @ Ic M in /M ax mA V C E (Sat) @ l c / l B Volts m A /m A ft M Hz Min Cob pF Max tON ns Max xO F F Case ns Max Geometry & Character ization Applicable Letter 2N3250 2N3250A 2N3251 2N3251A 2N3299 2N3300 2N3301 2N3302 2N3326 2N3485 2N3485A 2N3486 2N3486A 2N3502 2N3503 2N3504 2N3505 2N3671 2N3672 2N3673 360 360 360 360 800 800 360 360 800 360 360


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PDF 2N3250 2N3250A 2N3251 2N3251A 2N3299 2N3300 2N3301 2N3302 2N3326 2N3485
2N5227

Abstract: 2N3905 MOTOROLA MPS3906 mmt3905 2n995 mm3906 MPS5139 SILICON DICE motorola
Text: MOTOROLA SC -CDIODES/OPTO} ~34 D E ~ | b ib 7 a 5 5 37C H3 6367255 MOTOROLA SC 2N3251.A 2N3905 2N3906 2N4125 2N4126 2N5227 MM3905 MM3906


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PDF DMB155 2C3906 2N995 2N3250 2N3251 2N3905 2N3906 2N4125 2N4126 2N5227 2N3905 MOTOROLA MPS3906 mmt3905 mm3906 MPS5139 SILICON DICE motorola
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