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Part Manufacturer Description Datasheet Download Buy Part
LT1528CQ#TR Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C
LT1528CQ Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C
LT1528CQ#PBF Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C
LT1528CT#PBF Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: TO-220; Pins: 5; Temperature Range: 0°C to 70°C
LT1528CT Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: TO-220; Pins: 5; Temperature Range: 0°C to 70°C
LT1528CQ#TRPBF Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C

2N3055 typical applications Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - 2N3055 power amplifier circuit

Abstract: 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 MJ2955 2N3055 typical applications 2n3055 circuit 2N3055 JAPAN pin out TRANSISTOR 2n3055
Text: applications . 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = , Publication Order Number: 2N3055 /D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ , Registration. ( 2N3055 ) (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR CURRENT (AMP) 10 6 4 2 1 0.6 0.4 0.2 6 BONDING WIRE LIMIT THERMALLY , ) 60 500 µs 250 µs 2N3055 , MJ2955 50 µs dc 1 ms There are two limitations on the power handling


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PDF 2N3055 MJ2955 r14525 2N3055/D 2N3055 power amplifier circuit 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 MJ2955 2N3055 typical applications 2n3055 circuit 2N3055 JAPAN pin out TRANSISTOR 2n3055
1995 - 2N3055 MOTOROLA

Abstract: 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 power transistor 2n3055 2N3055 power circuit
Text: MOTOROLA Order this document by 2N3055 /D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , switching and amplifier applications . *Motorola Preferred Device · DC Current Gain - hFE = 20 ­ 70 @ , . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS , Registration. ( 2N3055 ) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle v v 2.0%. 2N3055 , MJ2955 20 , 2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0


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PDF 2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 MOTOROLA 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 power transistor 2n3055 2N3055 power circuit
2001 - 2N3055 power circuit

Abstract: 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 MJ2955 DC variable power with 2n3055 2n3055 equal 2n3055 circuit 2N3055 JAPAN mj2955
Text: general­purpose switching and amplifier applications . 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device , April, 2001 ­ Rev. 2 Publication Order Number: 2N3055 /D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , , IC = 1.0 Adc, f = 1.0 kHz) fhfe kHz *Indicates Within JEDEC Registration. ( 2N3055 ) (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR , ) SECOND BREAKDOWN LIMIT 10 20 40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 60 500 µs 250 µs 2N3055 , MJ2955


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PDF 2N3055 MJ2955 r14525 2N3055/D 2N3055 power circuit 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 MJ2955 DC variable power with 2n3055 2n3055 equal 2n3055 circuit 2N3055 JAPAN mj2955
2003 - MJ2955 300 watts amplifier circuit diagram

Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR
Text: 2N3055 , MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications . · DC Current Gain - hFE = 20 -70 @ IC = 4 Adc · , /°C TJ, Tstg ­ 65 to + 200 °C xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly , Device Package Shipping 2N3055 TO-204AA 100 Units / Tray MJ2955 TO-204AA 100 , Publication Order Number: 2N3055 /D 2N3055 , MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise


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PDF 2N3055, MJ2955 2N3055/D MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR
2005 - 2n3055 application note

Abstract: 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2N3055 typical applications 2n3055 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit
Text: 2N3055 (NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications . · DC Current Gain - hFE = 20-70 @ IC , CHARACTERISTICS Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = , may occur and reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package , Industries, LLC, 2005 1 May 5, 2005 - Rev. 5 Publication Order Number: 2N3055 /D 2N3055 (NPN


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PDF 2N3055 MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2N3055 typical applications 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit
1995 - 2N3055

Abstract: 2n3055 motorola 2N3055 power amplifier circuit 2N3055 power circuit 2N3055-D pin out TRANSISTOR 2n3055 2N3055 NPN MOTOROLA POWER TRANSISTOR 2n3055 pnp 2n3055 circuit 2n3055 application
Text: MOTOROLA Order this document by 2N3055 /D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , switching and amplifier applications . *Motorola Preferred Device · DC Current Gain - hFE = 20 ­ 70 @ , overall value. © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 , Registration. ( 2N3055 ) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle v v 2.0%. 2N3055 , MJ2955 20 , 2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0


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PDF 2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 2n3055 motorola 2N3055 power amplifier circuit 2N3055 power circuit 2N3055-D pin out TRANSISTOR 2n3055 2N3055 NPN MOTOROLA POWER TRANSISTOR 2n3055 pnp 2n3055 circuit 2n3055 application
2005 - 2n3055

Abstract: 2N3055G 2n3055 circuit diagram MJ2955 300 watts amplifier circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier 2N3055 power circuit MJ2955 MJ2955 300 watts amplifier
Text: 2N3055 (NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general-purpose switching and amplifier applications , -204AA 100 Units / Tray MJ2955G 0 Package 2N3055 20 TO-204AA (Pb-Free) 100 Units / Tray , . Publication Order Number: 2N3055 /D 2N3055 (NPN), MJ2955(PNP) Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , JEDEC Registration. ( 2N3055 ) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 20 There are


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PDF 2N3055 MJ2955 2N3055/D 2N3055G 2n3055 circuit diagram MJ2955 300 watts amplifier circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier 2N3055 power circuit MJ2955 300 watts amplifier
2004 - 2n3055 application note

Abstract: 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
Text: 2N3055 , MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications . · DC Current Gain - hFE = 20 -70 @ IC = 4 Adc · , DIAGRAM °C/W Operating and Storage Junction Temperature Range xxxx55 = Device Code xxxx= 2N3055 , . ORDERING INFORMATION Package Shipping 2N3055 TO-204AA 100 Units / Tray 2N3055G TO , Rev. 4 1 Publication Order Number: 2N3055 /D 2N3055 , MJ2955 ELECTRICAL CHARACTERISTICS (TC


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PDF 2N3055, MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
2N3055 power amplifier circuit

Abstract: 2n3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055-1 2N3055 typical applications 2N3055 power circuit 2n3055 circuit 2N3055 TRANSISTOR 2n3055 TRANSISTOR MJ2955
Text: . " Typical " param eters can and do vary in different applications . All operating param eters, including , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055 /D Com plem entary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications . · · · , 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (T q = 25°C unless otherwise noted) Characteristic *OFF , Registration. ( 2N3055 ) (1) Pulse Test: Pulse W idth < 300 ns, Duty Cycle < 2.0%. fT 2.5 - MHz hfe 15


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PDF 2N3055/D J2955 2N3055 power amplifier circuit 2n3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055-1 2N3055 typical applications 2N3055 power circuit 2n3055 circuit 2N3055 TRANSISTOR 2n3055 TRANSISTOR MJ2955
2008 - 2N3055

Abstract: 2n3055 malaysia MJ2955 2n3055 audio 2N3055 ST 2N3055 schematic diagram st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955
Text: 2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Audio , suitable for audio, power linear and switching applications . Table 1. TO-3 Figure 1. Internal schematic diagram Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 . Rev 7 Packaging TO-3 January 2008 Package tray 1/7 www.st.com 7 2N3055


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PDF 2N3055 MJ2955 2N3055 2n3055 malaysia MJ2955 2n3055 audio 2N3055 ST 2N3055 schematic diagram st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955
2n3055 motorola

Abstract: L 3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR motorola 2n3055 motorola power transistor 2N3055 pin out TRANSISTOR 2n3055 J 2N3055
Text: incidental damages. ` Typical "parameters can and do vary indifferent applications . All operating parameters , Silicon Pow er Transistors . . . designed for general-purpose switching and amplifier applications . · · · , recommended choices tor future use and best overall value. © Motorola, Inc. 1995 (M) MOTOROLA 2N3055 , id th < 300 ills , D uty C y c le < 2.0% . 2N3055 , MJ2955 There are two limitations on the , 2N3055 MJ2955 NPN PNP hF E , D C CURRENT GAIN 1C , COLLECTOR CURRENT (AMP) 1C, COLLECTOR


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PDF by2N3055/D J2955 2N3055/D 2n3055 motorola L 3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR motorola 2n3055 motorola power transistor 2N3055 pin out TRANSISTOR 2n3055 J 2N3055
2013 - 2n3055

Abstract: mj2955 ST 2n3055
Text: 2N3055 , MJ2955 Complementary power transistors Datasheet - production data Features • Low collector-emitter saturation voltage TAB • Complementary NPN - PNP transistors (s) ct Applications â , suitable for audio, power linear and switching applications . Internal schematic diagram )(s bs O ct u od r P e let o bs O Table 1. Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 This is information on a product in full production. DocID4079 Rev 8


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PDF 2N3055, MJ2955 2N3055 DocID4079 2n3055 mj2955 ST 2n3055
2004 - 2N3055

Abstract: 2N3055 power circuit 2N3055 power supply circuit 2n3055 circuit t 2N3055 transistors 2n3055 2n3055+circuit
Text: 2N3055 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. = 2N3055 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N3055 at our online store! 2N3055 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N3055 Information Did you Know , Request a Quote Test Houses 2N3055 Specifications Military/High-Rel : N V(BR)CEO (V) : 60 V(BR)CBO (V


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PDF 2N3055 2N3055 STV3208 LM3909N LM3909 2N3055 power circuit 2N3055 power supply circuit 2n3055 circuit t 2N3055 transistors 2n3055 2n3055+circuit
2005 - 2n3055

Abstract: 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram
Text: 2N3055 (NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications , 0 Package 2N3055 20 TO−204AA (Pb−Free) 100 Units / Tray TC, CASE TEMPERATURE , Number: 2N3055 /D 2N3055 (NPN), MJ2955(PNP) Î Î Î Î Î à , . ( 2N3055 ) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 20 There are two limitations on


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PDF 2N3055 MJ2955 2N3055/D 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram
2013 - 2n3055 malaysia

Abstract: Mj2955
Text: 2N3055 , MJ2955 Complementary power transistors Datasheet - production data Features • Low collector-emitter saturation voltage TAB • Complementary NPN - PNP transistors Applications • General , audio, power linear and switching applications . Table 1. Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 This is information on a product in full production. DocID4079 , rating 1 2N3055 , MJ2955 Absolute maximum rating Table 2. Absolute maximum rating Value Symbol


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PDF 2N3055, MJ2955 2N3055 DocID4079 2n3055 malaysia Mj2955
M8149

Abstract: 2N4355 Microtran M8149 Transformer M8050 tamura 2N3055 power supply circuit 2N3055 typical applications 2n3055 2N3055 power circuit m8050 transformer 2N1305
Text: DC TO DC COHVERTER TRANSFORMERS APPLICATIONS : · Portable Radiation M onitors · Infra-Red D etectors · O p-A m p Pow er Supplies · DC Isolation · G eodetic-O ceanographic-M edical Equipm ent · M , 2N3054 2N3055 1.25DX.75H-0.140Cl Hole .875D x .531H Molded Toroid P.C. MoldedToroid B E , 15 15 2000 2000 20k 20k 2N3055 2N3055 1.25DX.75H- 0.140 Cl Hole 1.25D x .75H- , . TYPICAL DC-DC CONVERTER TRANSFORMER CIRCUITS .1 SCHEMATIC 1 SCHEMATIC 2 SCHEMATIC 3 SCHEMATIC 4 T


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PDF 190mW M8149 M8050 2N670 2N670 M8073 M8074 M8072 M8092 M8120 2N4355 Microtran M8149 Transformer M8050 tamura 2N3055 power supply circuit 2N3055 typical applications 2n3055 2N3055 power circuit m8050 transformer 2N1305
2004 - 2N3055

Abstract: DC variable power with 2n3055 2N3055G power transistor 2n3055 2N3055 transistor 2n3055 amplifier data transistor 2n3055 2n3055h MJ2955 TRANSISTOR Mj2955 power transistor
Text: 2N3055 , MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications . · DC Current Gain - hFE = 20 -70 @ IC = 4 Adc · , Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location , reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package TO-204AA TO , © Semiconductor Components Industries, LLC, 2004 35 April, 2004 - Rev. 4 Publication Order Number: 2N3055


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PDF 2N3055, MJ2955 2N3055 2N3055 DC variable power with 2n3055 2N3055G power transistor 2n3055 2N3055 transistor 2n3055 amplifier data transistor 2n3055 2n3055h MJ2955 TRANSISTOR Mj2955 power transistor
2001 - pin configuration transistor 2n3055

Abstract: pin out TRANSISTOR 2n3055 OF transistor 2n3055 to-3 package CDIL 2N3055 Transistor 2n3055 2n3055 IC 2n3055 pin pnp transistor 2N3055 Mj2955 power transistor hfe 2n3055
Text: 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage , 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package ELECTRICAL , Width <300µs, Duty Cycle <2% Continental Device India Limited Data Sheet Page 2 of 4 2N3055 , kgs Page 3 of 4 2N3055 NPN MJ2955 PNP Notes TO-3 Metal Can Package Disclaimer The


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PDF 2N3055 MJ2955 C-120 MJ2955Rev291201E pin configuration transistor 2n3055 pin out TRANSISTOR 2n3055 OF transistor 2n3055 to-3 package CDIL 2N3055 Transistor 2n3055 IC 2n3055 pin pnp transistor 2N3055 Mj2955 power transistor hfe 2n3055
pin configuration transistor 2n3055

Abstract: pin out TRANSISTOR 2n3055 CDIL 2N3055 Transistor OF transistor 2n3055 to-3 package 2N3055 MJ2955 TRANSISTOR hfe 2n3055 pin configuration transistor mj2955 pnp transistor 2N3055 general purpose 2n3055 transistors
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company 2N3055 NPN , and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector , 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package ELECTRICAL , Width <300µs, Duty Cycle <2% Continental Device India Limited Data Sheet Page 2 of 4 2N3055 , kgs Page 3 of 4 2N3055 NPN MJ2955 PNP Notes TO-3 Metal Can Package Disclaimer The


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PDF ISO/TS16949 2N3055 MJ2955 C-120 MJ2955Rev291201E pin configuration transistor 2n3055 pin out TRANSISTOR 2n3055 CDIL 2N3055 Transistor OF transistor 2n3055 to-3 package MJ2955 TRANSISTOR hfe 2n3055 pin configuration transistor mj2955 pnp transistor 2N3055 general purpose 2n3055 transistors
Westinghouse Semiconductor

Abstract: westinghouse transistors 2n3055 voltage regulator westinghouse 2N3055
Text: POüJEREX IN C TD 54-673 Page 1 i Silicon Power Transistors J E D E C T y p e 2N3055 Westinghouse ö > H > co For Switching Amplifier and Regulator Applications 15 Amperes, 115 Watts IV sQ X m m Application The Westinghouse 2N3055 is an NPN dif­ fused transistor. This , regulator applications . The temperature range to 200*C permits reliable operation in high ambients, and , Westinghouse JEDEC-type silicon power semiconductors, the 2N3055 carries the Westinghouse Lifetime Guarantee


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PDF 2N3055 2N3055 C/2116/DB; C/2117 Westinghouse Semiconductor westinghouse transistors 2n3055 voltage regulator westinghouse 2N3055
2004 - 2n3055 malaysia

Abstract: MJ2955 2n3055 200 watts amplifier DC variable power with 2n3055 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve
Text: 2N3055 , MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications . Features: · Power dissipation - PD = 115W at TC = 25°C. · DC current gain hFE = 20 to 70 at IC = 4.0A. · VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. NPN 2N3055 PNP , 31/05/05 V1.0 2N3055 , MJ2955 Complementary Power Transistors Thermal Characteristics , 300µs, Duty Cycle 2.0%. (2) fT = hfe · ftest. Page 2 31/05/05 V1.0 2N3055 , MJ2955


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PDF 2N3055, MJ2955 400mA. 2N3055 2n3055 malaysia MJ2955 2n3055 200 watts amplifier DC variable power with 2n3055 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve
1995 - Not Available

Abstract: No abstract text available
Text: Preferred Device . . . designed for general–purpose switching and amplifier applications . Complementary Silicon Power Transistors 2N3055 * PNP MJ2955 * NPN SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055 /D MOTOROLA 2 Motorola Bipolar Power Transistor Device Data , derated for temperature according to Figure 1. 20 2N3055 , MJ2955 , * Indicates Within JEDEC Registration. ( 2N3055 ) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle v 2.0


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PDF 2N3055/D* 2N3055/D
2001 - Not Available

Abstract: No abstract text available
Text: Certified Manufacturer 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION , UNITS V V mA mA mA V V Page 1 of 4 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER , India Limited Data Sheet Page 2 of 4 2N3055 NPN MJ2955 PNP TO-3 Metal Can Package TO , Size Qty Gr Wt 17" x 11.5" x 21" 2K 27.5 kgs Page 3 of 4 2N3055 NPN MJ2955 PNP Notes


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PDF 2N3055 MJ2955 C-120 MJ2955Rev291201E
Not Available

Abstract: No abstract text available
Text: 2N3055 NPN MJ2955 PNP SILICON PLANAR POWER TRANSISTORS TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage , 20 5 5.0 0.7 5.0 1.1 3.0 1.5 70 UNITS V V mA mA mA V V Page 1 of 4 2N3055 , Width <300µs, Duty Cycle <2% Continental Device India Limited Data Sheet Page 2 of 4 2N3055 , kgs Page 3 of 4 2N3055 NPN MJ2955 PNP Notes TO-3 Metal Can Package Disclaimer The


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PDF 2N3055 MJ2955 C-120 MJ2955Rev291201E
1998 - 2N3055 transistor equivalent to220

Abstract: 12v 10A car battery charger wiring diagram 2n3055 application note 2N3055 equivalent mosfet 2N3055 pin out connections smd transistor 2N3055 2N3055 transistor equivalent 2n3055 use in battery charger equivalent transistor 2n3055 2N3055 power supply circuit
Text: used as a post-regulator in many different applications covering up to 5A maximum current. An , voltage. Figure 1. L4955 Typical Application. µP PG INH VIN IN 1 CL 4 OUT , automotive applications . Min dropout is: Vbe1 + Vbe2 + Vcesat3. Able to reduce the dropout to values lower , element is close to saturation. This causes efficiency problems in applications supplied with batteries , , sets the requested current limiting threshold to a typical value given by : Ilim = 4/24 39.69


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PDF AN932 L4955 O-220. 12Vatent 2N3055 transistor equivalent to220 12v 10A car battery charger wiring diagram 2n3055 application note 2N3055 equivalent mosfet 2N3055 pin out connections smd transistor 2N3055 2N3055 transistor equivalent 2n3055 use in battery charger equivalent transistor 2n3055 2N3055 power supply circuit
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