The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC1050AMJ8/883 Linear Technology IC , Part Number Only
LTC1290CMJ/883 Linear Technology IC , Part Number Only
LT1013MJ8/883 Linear Technology IC , Part Number Only
LTC1050MJ8/883 Linear Technology IC , Part Number Only
LTC1292CMJ8/883 Linear Technology IC , Part Number Only
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

2N3055 equivalent transistor NUMBER Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - 2N3055 power amplifier circuit

Abstract: 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 MJ2955 2N3055 typical applications 2n3055 circuit 2N3055 JAPAN pin out TRANSISTOR 2n3055
Text: Publication Order Number : 2N3055 /D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ , applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = , Registration. ( 2N3055 ) (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR CURRENT (AMP) 10 6 4 2 1 0.6 0.4 0.2 6 BONDING WIRE LIMIT THERMALLY , ) 60 500 µs 250 µs 2N3055 , MJ2955 50 µs dc 1 ms There are two limitations on the power handling


Original
PDF 2N3055 MJ2955 r14525 2N3055/D 2N3055 power amplifier circuit 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 MJ2955 2N3055 typical applications 2n3055 circuit 2N3055 JAPAN pin out TRANSISTOR 2n3055
2005 - 2n3055

Abstract: 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram
Text: Number : 2N3055 /D 2N3055 (NPN), MJ2955(PNP) Î Î Î Î Î à , 2N3055 (NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , 0 Package 2N3055 20 TO−204AA (Pb−Free) 100 Units / Tray TC, CASE TEMPERATURE , . ( 2N3055 ) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 20 There are two limitations on the power handling ability of a transistor : average junction temperature and second breakdown. Safe


Original
PDF 2N3055 MJ2955 2N3055/D 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram
2004 - 2N3055

Abstract: DC variable power with 2n3055 2N3055G power transistor 2n3055 2N3055 transistor 2n3055 amplifier data transistor 2n3055 2n3055h MJ2955 TRANSISTOR Mj2955 power transistor
Text: © Semiconductor Components Industries, LLC, 2004 35 April, 2004 - Rev. 4 Publication Order Number : 2N3055 /D 2N3055 , MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ , 2N3055 , MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location , reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package TO-204AA TO


Original
PDF 2N3055, MJ2955 2N3055 2N3055 DC variable power with 2n3055 2N3055G power transistor 2n3055 2N3055 transistor 2n3055 amplifier data transistor 2n3055 2n3055h MJ2955 TRANSISTOR Mj2955 power transistor
2001 - 2N3055 power circuit

Abstract: 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 MJ2955 DC variable power with 2n3055 2n3055 equal 2n3055 circuit 2N3055 JAPAN mj2955
Text: April, 2001 ­ Rev. 2 Publication Order Number : 2N3055 /D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device , , IC = 1.0 Adc, f = 1.0 kHz) fhfe kHz *Indicates Within JEDEC Registration. ( 2N3055 ) (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR , ) SECOND BREAKDOWN LIMIT 10 20 40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 60 500 µs 250 µs 2N3055 , MJ2955


Original
PDF 2N3055 MJ2955 r14525 2N3055/D 2N3055 power circuit 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 MJ2955 DC variable power with 2n3055 2n3055 equal 2n3055 circuit 2N3055 JAPAN mj2955
2015 - 2N3055L-T30-Y

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N3055 NPN SILICON TRANSISTOR SILICON NPN TRANSISTORS  DESCRIPTION The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power , of 3 QW-R205-003.B 2N3055 NPN SILICON TRANSISTOR UTC assumes no responsibility for , ® ORDERING INFORMATION Ordering Number 2N3055L-T30-Y Note: Pin Assignment: E: Emitter B: Base ï , www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R205-003.B 2N3055  NPN


Original
PDF 2N3055 2N3055 2N3055L-T30-Y QW-R205-003 2N3055L-T30-Y
2003 - MJ2955 300 watts amplifier circuit diagram

Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR
Text: Publication Order Number : 2N3055 /D 2N3055 , MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise , 2N3055 , MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , /°C TJ, Tstg ­ 65 to + 200 °C xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly , Device Package Shipping 2N3055 TO-204AA 100 Units / Tray MJ2955 TO-204AA 100 , *Indicates Within JEDEC Registration. ( 2N3055 ) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 20


Original
PDF 2N3055, MJ2955 2N3055/D MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR
2005 - 2n3055 application note

Abstract: 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2N3055 typical applications 2n3055 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit
Text: Industries, LLC, 2005 1 May 5, 2005 - Rev. 5 Publication Order Number : 2N3055 /D 2N3055 (NPN , 2N3055 (NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors . . . , CHARACTERISTICS Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = , may occur and reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package , ) fhfe kHz *Indicates Within JEDEC Registration. ( 2N3055 ) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle


Original
PDF 2N3055 MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2N3055 typical applications 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit
2001 - MJ802 EQUIVALENT

Abstract: 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent ST T8 3580 MJ15025* equivalent MJ3055 equivalent BDX37 equivalent mje340 equivalent
Text: (sus) - 400 V Collector­Emitter Breakdown - V(BR)CES - 650 V State­of­Art Bipolar Power Transistor , for future use and best overall value. REV 1 Motorola Bipolar Power Transistor Device Data , ) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%. 3­530 Motorola Bipolar Power Transistor Device , Figure 5. Capacitance Motorola Bipolar Power Transistor Device Data 3­531 MJ16110 MJW16110 , Bipolar Power Transistor Device Data MJ16110 MJW16110 Table 1. Inductive Load Switching Drive Circuit


Original
PDF MJ16110* MJW16110* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJ802 EQUIVALENT 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent ST T8 3580 MJ15025* equivalent MJ3055 equivalent BDX37 equivalent mje340 equivalent
2004 - 2n3055 malaysia

Abstract: MJ2955 2n3055 200 watts amplifier DC variable power with 2n3055 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve
Text: ) Package 115 TO-3 Page 4 Type Part Number NPN 2N3055 PNP MJ2955 31/05/05 V1 , 2N3055 , MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and , 20 to 70 at IC = 4.0A. · VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. NPN 2N3055 PNP , 31/05/05 V1.0 2N3055 , MJ2955 Complementary Power Transistors Thermal Characteristics , 300µs, Duty Cycle 2.0%. (2) fT = hfe · ftest. Page 2 31/05/05 V1.0 2N3055 , MJ2955


Original
PDF 2N3055, MJ2955 400mA. 2N3055 2n3055 malaysia MJ2955 2n3055 200 watts amplifier DC variable power with 2n3055 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve
2005 - 2n3055

Abstract: 2N3055G 2n3055 circuit diagram MJ2955 300 watts amplifier circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier 2N3055 power circuit MJ2955 MJ2955 300 watts amplifier
Text: . Publication Order Number : 2N3055 /D 2N3055 (NPN), MJ2955(PNP) Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , 2N3055 (NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , -204AA 100 Units / Tray MJ2955G 0 Package 2N3055 20 TO-204AA (Pb-Free) 100 Units / Tray , JEDEC Registration. ( 2N3055 ) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 20 There are two limitations on the power handling ability of a transistor : average junction temperature and


Original
PDF 2N3055 MJ2955 2N3055/D 2N3055G 2n3055 circuit diagram MJ2955 300 watts amplifier circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier 2N3055 power circuit MJ2955 300 watts amplifier
2001 - bd139 equivalent transistor

Abstract: transistor 2SA1046 motorola transistor cross reference transistor equivalent book 2SC2073 transistor 40251 TRANSISTOR REPLACEMENT GUIDE transistor bd610 pin configuration transistor bd140 transistor equivalent book 2sc2238 ST T8 3580
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Transistor Switchmode Bridge Series , (sus) - 400 V Collector­Emitter Breakdown - V(BR)CES - 650 V State­of­Art Bipolar Power Transistor , " design. REV 1 3­696 Motorola Bipolar Power Transistor Device Data , 300 µs, Duty Cycle 2.0%. Motorola Bipolar Power Transistor Device Data 3­697 MJE16106 , VOLTAGE (VOLTS) Figure 5. Capacitance 3­698 Motorola Bipolar Power Transistor Device Data


Original
PDF MJE16106 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 bd139 equivalent transistor transistor 2SA1046 motorola transistor cross reference transistor equivalent book 2SC2073 transistor 40251 TRANSISTOR REPLACEMENT GUIDE transistor bd610 pin configuration transistor bd140 transistor equivalent book 2sc2238 ST T8 3580
2001 - MJ3001 equivalent

Abstract: 2N3055 equivalent transistor NUMBER BD907 equivalent Motorola transistors MJE3055 TO 127 transistor equivalent book 2sc2238 Drive IC 2SC3346 TRANSISTOR REPLACEMENT GUIDE mje340 equivalent MJE350 equivalent mje521 equivalent
Text: for future use and best overall value. REV 3 Motorola Bipolar Power Transistor Device Data , Cycle 2%. 3­848 Motorola Bipolar Power Transistor Device Data MJW16010A TYPICAL STATIC , °C Figure 5. Capacitance Motorola Bipolar Power Transistor Device Data 3­849 MJW16010A TYPICAL , Figure 11. Crossover Time Motorola Bipolar Power Transistor Device Data MJW16010A Table 1. Inductive , MTP12N10 500 µF 150 Voff *Tektronix AM503 *P6302 or Equivalent Scope - Tektronix 7403 or Equivalent T1


Original
PDF Satur32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 MJ3001 equivalent 2N3055 equivalent transistor NUMBER BD907 equivalent Motorola transistors MJE3055 TO 127 transistor equivalent book 2sc2238 Drive IC 2SC3346 TRANSISTOR REPLACEMENT GUIDE mje340 equivalent MJE350 equivalent mje521 equivalent
Not Available

Abstract: No abstract text available
Text: . Document Number 9313 Issue 2 Page 1 of 1 SILICON NPN POWER TRANSISTOR 2N3055 il^jeleçtroniçs , Website: http://www.semelab-tt.com Document Number 9313 Issue 2 Page 2 of 2 SILICON NPN POWER TRANSISTOR 2N3055 IT ¡electronics . , SILICON NPN POWER TRANSISTOR IT ¡electronics . Semelab Limited 2N3055 High Gain A t High Current. Hermetic T03 Metal package. Ideally


OCR Scan
PDF 2N3055
1995 - 2N3055 MOTOROLA

Abstract: 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 power transistor 2n3055 2N3055 power circuit
Text: . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS , Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES , Transistor Device Data * 2N3055 /D* 2N3055 /D Motorola , MOTOROLA Order this document by 2N3055 /D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , Registration. ( 2N3055 ) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle v v 2.0%. 2N3055 , MJ2955 20


Original
PDF 2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 MOTOROLA 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 power transistor 2n3055 2N3055 power circuit
2001 - 2N3055 equivalent transistor NUMBER

Abstract: bd139 equivalent transistor 2n6284 equivalent MJE350 equivalent bd139 equivalent TIP152 equivalent MJE371 equivalent bd139 3v BU108 BUL45 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE1320 NPN Silicon Power Transistor Switchmode Series This transistor is designed for high­voltage, power switching in inductive circuits where RBSOA and , Saturation Voltages Leakage Currents MAXIMUM RATINGS Designer's TM Data Sheet POWER TRANSISTOR 2 , are given to facilitate "worst case" design. 3­620 Motorola Bipolar Power Transistor Device Data , Transistor Device Data 3­621 MJE1320 TYPICAL STATIC CHARACTERISTICS VCE , COLLECTOR­EMITTER VOLTAGE


Original
PDF MJE1320 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N3055 equivalent transistor NUMBER bd139 equivalent transistor 2n6284 equivalent MJE350 equivalent bd139 equivalent TIP152 equivalent MJE371 equivalent bd139 3v BU108 BUL45 equivalent
2001 - mje340 equivalent

Abstract: BU108 BD139 fall time bd139 equivalent transistor 2sd358 equivalent 2SA794 equivalent BU100 transistor mj11032 equivalent BU326 BUV46 transistor
Text: Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ , Width = 300 µs, Duty Cycle 2.0% Motorola Bipolar Power Transistor Device Data 3­513 , 2.0% 3­514 Motorola Bipolar Power Transistor Device Data MJ16010 MJW16010 MJ16012 MJW16012 , Bipolar Power Transistor Device Data 3­515 MJ16010 MJW16010 MJ16012 MJW16012 5000 3000 2000 t sv , = C IB1 Figure 12. Crossover Time 3­516 Motorola Bipolar Power Transistor Device Data


Original
PDF MJ16010 MJ16012 MJW16012 MJW16010 Loa32 TIP73B TIP74 TIP74A TIP74B mje340 equivalent BU108 BD139 fall time bd139 equivalent transistor 2sd358 equivalent 2SA794 equivalent BU100 transistor mj11032 equivalent BU326 BUV46 transistor
2004 - 2n3055 application note

Abstract: 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
Text: Rev. 4 1 Publication Order Number : 2N3055 /D 2N3055 , MJ2955 ELECTRICAL CHARACTERISTICS (TC , 2N3055 , MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , DIAGRAM °C/W Operating and Storage Junction Temperature Range xxxx55 = Device Code xxxx= 2N3055 , . ORDERING INFORMATION Package Shipping 2N3055 TO-204AA 100 Units / Tray 2N3055G TO , *Indicates Within JEDEC Registration. ( 2N3055 ) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 20


Original
PDF 2N3055, MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
2001 - 2SD418

Abstract: k 3436 transistor TIP33C equivalent IR647 TIP121 transistor BU108 buv18a 2SC1086 BD827 2N3055 transistor equivalent to220
Text: Transistor The MJ10000 Darlington transistor is designed for high­voltage, high­speed, power switching in , "worst case" design. REV 4 Motorola Bipolar Power Transistor Device Data 3­433 , Transistor Device Data MJ10000 DC CHARACTERISTICS VCE , COLLECTOR­EMITTER VOLTAGE (VOLTS) 500 300 200 , Bipolar Power Transistor Device Data 3­435 MJ10000 Table 1. Test Conditions for Dynamic , EQUIVALENT Vclamp RS = 0.1 PW Varied to Attain IC = 250 mA CIRCUIT VALUES Lcoil = 10 mH, VCC = 10 V


Original
PDF MJ10000 204AA TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SD418 k 3436 transistor TIP33C equivalent IR647 TIP121 transistor BU108 buv18a 2SC1086 BD827 2N3055 transistor equivalent to220
2001 - MJ3001 equivalent

Abstract: bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent BDT65C equivalent bd139 equivalent transistor BU108 MJH11021 equivalent darlington tip31
Text: Transistor with Base-Emitter Speedup Diode The MJ10005 Darlington transistor is designed for high­voltage , for future use and best overall value. REV 2 Motorola Bipolar Power Transistor Device Data , 300 µs, Duty Cycle 2%. v 3­440 Motorola Bipolar Power Transistor Device Data MJ10005 , Transistor Device Data 3­441 MJ10005 Table 1. Test Conditions for Dynamic Performance VCEO(sus) VCEX , CONDITIONS 2 Rcoil Lcoil VCC RESISTIVE SWITCHING INPUT CONDITIONS 0 1N4937 OR EQUIVALENT Vclamp


Original
PDF MJ10005 MJ10005* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJ3001 equivalent bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent BDT65C equivalent bd139 equivalent transistor BU108 MJH11021 equivalent darlington tip31
2001 - mj10016

Abstract: 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent MJE371 equivalent 2sd526 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent D45H11 equivalent replacement
Text: 10%. REV 1 Motorola Bipolar Power Transistor Device Data 3­461 , Bipolar Power Transistor Device Data MJ10015 MJ10016 TYPICAL CHARACTERISTICS 100 2.4 2.0 V, VOLTAGE , Figure 5. Output Capacitance Motorola Bipolar Power Transistor Device Data 3­463 MJ10015 , TUT 1N4937 OR EQUIVALENT Vclamp RS = 0.1 2 Rcoil Lcoil VCC IB1 adjusted to obtain the forced hFE , INPUT SEE ABOVE FOR DETAILED CONDITIONS 2 1N4937 OR EQUIVALENT Vclamp RS = 0.1 Rcoil Lcoil VCC IC


Original
PDF MJ10015 MJ10016 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent MJE371 equivalent 2sd526 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent D45H11 equivalent replacement
2001 - TRANSISTOR REPLACEMENT GUIDE

Abstract: bd139 equivalent 2SC495 mje13007 equivalent bd139 equivalent transistor 2N3055 equivalent transistor NUMBER 2sd880 equivalent BDX37 equivalent pin configuration NPN transistor tip41c MJE350 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Transistor 1 kV SWITCHMODE Series , value. REV 3 3­830 Motorola Bipolar Power Transistor Device Data , %. Motorola Bipolar Power Transistor Device Data 3­831 MJH16006A TYPICAL STATIC CHARACTERISTICS VCE , . Capacitance 3­832 Motorola Bipolar Power Transistor Device Data MJH16006A TYPICAL INDUCTIVE , Transistor Device Data 3­833 MJH16006A Table 1. Inductive Load Switching Drive Circuit +15 1 µF 150


Original
PDF Satur32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 TRANSISTOR REPLACEMENT GUIDE bd139 equivalent 2SC495 mje13007 equivalent bd139 equivalent transistor 2N3055 equivalent transistor NUMBER 2sd880 equivalent BDX37 equivalent pin configuration NPN transistor tip41c MJE350 equivalent
2001 - 2n3773 b2

Abstract: SDT9207 "cross reference" 2SC1030 "cross reference" equivalent bu808 bd433 MJE371 equivalent bd139 equivalent D45H11 equivalent replacement MJ3001 equivalent MJL21193 equivalent
Text: 1 3­520 Motorola Bipolar Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , Power Transistor Device Data 3­521 MJ16018 MJW16018 TYPICAL STATIC CHARACTERISTICS VCE , Transistor Device Data MJ16018 MJW16018 TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS 2000 1000 t c , Transistor Device Data MJ16018 MJW16018 100 POWER DERATING FACTOR (%) SECOND BREAKDOWN DERATING 80 , are two limitations on the power handling ability of a transistor : average junction temperature and


Original
PDF TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N6490 2n3773 b2 SDT9207 "cross reference" 2SC1030 "cross reference" equivalent bu808 bd433 MJE371 equivalent bd139 equivalent D45H11 equivalent replacement MJ3001 equivalent MJL21193 equivalent
1995 - 2N3055

Abstract: 2n3055 motorola 2N3055 power amplifier circuit 2N3055 power circuit 2N3055-D pin out TRANSISTOR 2n3055 2N3055 NPN MOTOROLA POWER TRANSISTOR 2n3055 pnp 2n3055 circuit 2n3055 application
Text: overall value. © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 , Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES , Transistor Device Data * 2N3055 /D* 2N3055 /D Motorola , MOTOROLA Order this document by 2N3055 /D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , Registration. ( 2N3055 ) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle v v 2.0%. 2N3055 , MJ2955 20


Original
PDF 2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 2n3055 motorola 2N3055 power amplifier circuit 2N3055 power circuit 2N3055-D pin out TRANSISTOR 2n3055 2N3055 NPN MOTOROLA POWER TRANSISTOR 2n3055 pnp 2n3055 circuit 2n3055 application
2001 - BUT34 equivalent

Abstract: BU323A equivalent BU108 2N3055 BU100 BU326 MJ3001 equivalent bc 574 transistor TIP34C equivalent BUV22 equivalent
Text: DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS The BUT34 Darlington transistor is designed for high­voltage , Motorola Bipolar Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , Bipolar Power Transistor Device Data 3­371 BUT34 TYPICAL CHARACTERISTICS VCE , COLLECTOR­EMITTER , Response 3­372 Motorola Bipolar Power Transistor Device Data BUT34 Table 1. Test Conditions for , % VD TEST CIRCUITS TUT 1 INPUT SEE ABOVE FOR DETAILED CONDITIONS 2 1N4937 OR EQUIVALENT Vclamp RS


Original
PDF BUT34 BUT34 204AE TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BUT34 equivalent BU323A equivalent BU108 2N3055 BU100 BU326 MJ3001 equivalent bc 574 transistor TIP34C equivalent BUV22 equivalent
2001 - D45H11 equivalent replacement

Abstract: transistor equivalent book 2SC2073 BU108 bd139 equivalent transistor BUT11Af equivalent BDX36 equivalent 2SA818 equivalent transistor mj11028 equivalent mje521 equivalent transistor BU326
Text: for future use and best overall value. REV 2 3­688 Motorola Bipolar Power Transistor Device , : PW = 300 µs, Duty Cycle I *f = C IB1 2%. Motorola Bipolar Power Transistor Device Data 3­689 , . Collector­Emitter Saturation Region 3­690 Figure 4. Base­Emitter Voltage Motorola Bipolar Power Transistor Device , Motorola Bipolar Power Transistor Device Data 3­691 MJE16002 MJE16004 TYPICAL DYNAMIC , Figure 15. Thermal Response (MJE16002 and MJE16004) 3­692 Motorola Bipolar Power Transistor Device


Original
PDF MJE16004 MJE16002 MJH16002 Designe32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A D45H11 equivalent replacement transistor equivalent book 2SC2073 BU108 bd139 equivalent transistor BUT11Af equivalent BDX36 equivalent 2SA818 equivalent transistor mj11028 equivalent mje521 equivalent transistor BU326
Supplyframe Tracking Pixel